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FDMS7660AS ONSEMI fdms7660as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0310AS ONSEMI fdms0310as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FSB50550US ONSEMI FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
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NTMJS1D4N06CLTWG ONSEMI ntmjs1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC33071DR2G MC33071DR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
на замовлення 2339 шт:
термін постачання 21-30 дні (днів)
12+34.77 грн
Мінімальне замовлення: 12
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NTP067N65S3H ONSEMI ntp067n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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NCP551SN50T1G ONSEMI ncp551-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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FQD2N60CTM-WS FQD2N60CTM-WS ONSEMI fqu2n60c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74VHC540DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633C86DA380D3&compId=MC74VHC540-D.pdf?ci_sign=d6d8a5a088e1f65f006fdd98c1bd7a0fbbed35c9 Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of package: reel; tape
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MBRS240LT3G MBRS240LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699E03639408469&compId=MBRS240LT3G.PDF?ci_sign=a0b1f011afec24b5c106edf777d02487d9e956fe Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.55V
на замовлення 2080 шт:
термін постачання 21-30 дні (днів)
17+27.00 грн
22+18.52 грн
26+15.69 грн
50+13.75 грн
100+12.13 грн
250+10.43 грн
500+9.46 грн
1000+8.65 грн
Мінімальне замовлення: 17
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RB751S40T1G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 3791 шт:
термін постачання 21-30 дні (днів)
56+7.84 грн
81+5.01 грн
109+3.74 грн
124+3.28 грн
500+2.47 грн
1000+2.20 грн
1500+2.06 грн
3000+1.85 грн
Мінімальне замовлення: 56
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NTR4170NT1G NTR4170NT1G ONSEMI ntr4170n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
17+26.13 грн
23+17.95 грн
27+15.20 грн
50+10.43 грн
100+9.22 грн
500+8.57 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
NSVJ5908DSG5T1G ONSEMI nsvj5908dsg5-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Application: automotive industry
Gate current: 10mA
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2N6488G 2N6488G ONSEMI 2n6487-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
7+62.70 грн
10+44.88 грн
50+37.68 грн
100+34.93 грн
Мінімальне замовлення: 7
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MMSZ5V6T1G MMSZ5V6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 6295 шт:
термін постачання 21-30 дні (днів)
72+6.10 грн
105+3.88 грн
146+2.78 грн
171+2.38 грн
250+1.95 грн
500+1.67 грн
1000+1.42 грн
1500+1.37 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
MM3Z5V6T1G MM3Z5V6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 6012 шт:
термін постачання 21-30 дні (днів)
50+8.71 грн
74+5.50 грн
95+4.27 грн
116+3.49 грн
142+2.85 грн
500+1.81 грн
1000+1.50 грн
3000+1.21 грн
Мінімальне замовлення: 50
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NTMYS014N06CLTWG ONSEMI ntmys014n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3081M MOC3081M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BA93849DF2D0FA8&compId=MOC3083M.pdf?ci_sign=9a3ffa2a6a60a05a9564f35d35517a533d1f8281 Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
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LM285Z-2.5RAG LM285Z-2.5RAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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NSR05F40NXT5G NSR05F40NXT5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BD4425A48EA0CE&compId=NSR05F40NXT5G.PDF?ci_sign=05f8c00715ec2118bb81283864ab98ce8af480e0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.46V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Case: DSN0402-2
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NSR0530P2T5G ONSEMI nsr0530p2-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.62V
Load current: 0.5A
Max. off-state voltage: 30V
Case: SOD923
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NSR05F30NXT5G ONSEMI nsr05f30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Case: 0402
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1SMB5956BT3G 1SMB5956BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1188 шт:
термін постачання 21-30 дні (днів)
30+14.80 грн
42+9.70 грн
51+8.01 грн
62+6.55 грн
Мінімальне замовлення: 30
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1SMB5955BT3G 1SMB5955BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 2380 шт:
термін постачання 21-30 дні (днів)
21+20.90 грн
27+15.53 грн
29+13.99 грн
50+10.59 грн
100+9.38 грн
500+8.09 грн
Мінімальне замовлення: 21
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NTBG025N065SC1 ONSEMI ntbg025n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NTMYS025N06CLTWG ONSEMI ntmys025n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDB12N50FTM-WS FDB12N50FTM-WS ONSEMI fdb12n50f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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NTP110N65S3HF ONSEMI ntp110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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NTMT110N65S3HF ONSEMI ntmt110n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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NTPF110N65S3HF ONSEMI ntpf110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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MM3Z3V3T1G MM3Z3V3T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 34440 шт:
термін постачання 21-30 дні (днів)
56+7.84 грн
74+5.50 грн
97+4.21 грн
199+2.04 грн
261+1.55 грн
338+1.20 грн
500+1.12 грн
Мінімальне замовлення: 56
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NTBLS1D1N08H ONSEMI ntbls1d1n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Power dissipation: 311W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Kind of channel: enhancement
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NTBLS1D5N08MC ONSEMI ntbls1d5n08mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 1.53mΩ
Power dissipation: 2.9W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
Kind of channel: enhancement
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NTBLS1D5N10MCTXG ONSEMI NTBLS1D5N10MC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 161W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
Kind of channel: enhancement
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NTBLS1D7N08H ONSEMI ntbls1d7n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Power dissipation: 83W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
Kind of channel: enhancement
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NTBLS1D7N10MCTXG ONSEMI NTBLS1D7N10MC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Power dissipation: 147W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Kind of channel: enhancement
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SS32 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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NTD20N06T4G ONSEMI ntd20n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2487 шт:
термін постачання 21-30 дні (днів)
4+132.37 грн
5+107.55 грн
10+100.28 грн
50+83.29 грн
100+76.02 грн
200+69.55 грн
500+62.27 грн
1000+56.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDA16N50-F109 FDA16N50-F109 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD923142AC3A0C7&compId=FDA16N50_F109.PDF?ci_sign=c603ddf6113d634b6762760ffa586cc84b7053d3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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FDA16N50LDTU ONSEMI FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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1N5239BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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FDG1024NZ FDG1024NZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEAA033AFB1E28&compId=FDG1024NZ.pdf?ci_sign=2dd81f2da8a73f94804271db1a5248d982297911 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
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FST3125DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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FST3125MTCX FST3125MTCX ONSEMI FAIRS26272-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
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NCP130BMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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NCP130AMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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FGH75T65SHDTL4 ONSEMI fgh75t65shdtl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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FGH75T65SQDNL4 ONSEMI fgh75t65sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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NTBG020N120SC1 ONSEMI ntbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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MOC8050M MOC8050M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8.5µs
Turn-off time: 95µs
Number of channels: 1
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NTLJS2103PTBG ONSEMI ntljs2103p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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FCB260N65S3 FCB260N65S3 ONSEMI fcb260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
на замовлення 784 шт:
термін постачання 21-30 дні (днів)
2+248.20 грн
10+163.35 грн
25+145.56 грн
100+135.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FCD260N65S3 ONSEMI fcd260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
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NTPF360N65S3H ONSEMI ntpf360n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Power dissipation: 26W
Gate charge: 17.5nC
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NTND31225CZTAG ONSEMI ntnd31225cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
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MC33262DR2G ONSEMI mc34262-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
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MC33262PG MC33262PG ONSEMI mc34262-d.pdf description Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
на замовлення 143 шт:
термін постачання 21-30 дні (днів)
6+76.64 грн
10+63.89 грн
25+61.46 грн
50+54.99 грн
100+53.37 грн
Мінімальне замовлення: 6
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FAN4800AUN ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FAN4800AUM ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FUSB2805MLX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A093ACDFD2259&compId=FUSB2805.pdf?ci_sign=02d0f2713126d4acd3c9bf4ffe66460232cabeb9 Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI,USB 2.0; transceiver; 2.7÷4.5VDC; MLP32
Type of integrated circuit: interface
Interface: ULPI; USB 2.0
Kind of integrated circuit: transceiver
Data transfer rate: 0.48Gbps
Supply voltage: 2.7...4.5V DC
Case: MLP32
Mounting: SMD
Operating temperature: -40...85°C
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FDMS7660AS fdms7660as-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0310AS fdms0310as-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FSB50550US FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
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NTMJS1D4N06CLTWG ntmjs1d4n06cl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC33071DR2G mc34071-d.pdf
MC33071DR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
на замовлення 2339 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+34.77 грн
Мінімальне замовлення: 12
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NTP067N65S3H ntp067n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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NCP551SN50T1G ncp551-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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FQD2N60CTM-WS fqu2n60c-d.pdf
FQD2N60CTM-WS
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74VHC540DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633C86DA380D3&compId=MC74VHC540-D.pdf?ci_sign=d6d8a5a088e1f65f006fdd98c1bd7a0fbbed35c9
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of package: reel; tape
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MBRS240LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699E03639408469&compId=MBRS240LT3G.PDF?ci_sign=a0b1f011afec24b5c106edf777d02487d9e956fe
MBRS240LT3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.55V
на замовлення 2080 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+27.00 грн
22+18.52 грн
26+15.69 грн
50+13.75 грн
100+12.13 грн
250+10.43 грн
500+9.46 грн
1000+8.65 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
RB751S40T1G rb751s40t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 3791 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.84 грн
81+5.01 грн
109+3.74 грн
124+3.28 грн
500+2.47 грн
1000+2.20 грн
1500+2.06 грн
3000+1.85 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
NTR4170NT1G ntr4170n-d.pdf
NTR4170NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.13 грн
23+17.95 грн
27+15.20 грн
50+10.43 грн
100+9.22 грн
500+8.57 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
NSVJ5908DSG5T1G nsvj5908dsg5-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Application: automotive industry
Gate current: 10mA
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2N6488G 2n6487-d.pdf
2N6488G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+62.70 грн
10+44.88 грн
50+37.68 грн
100+34.93 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MMSZ5V6T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ5V6T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 6295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.10 грн
105+3.88 грн
146+2.78 грн
171+2.38 грн
250+1.95 грн
500+1.67 грн
1000+1.42 грн
1500+1.37 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
MM3Z5V6T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z5V6T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 6012 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.71 грн
74+5.50 грн
95+4.27 грн
116+3.49 грн
142+2.85 грн
500+1.81 грн
1000+1.50 грн
3000+1.21 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NTMYS014N06CLTWG ntmys014n06cl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3081M pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BA93849DF2D0FA8&compId=MOC3083M.pdf?ci_sign=9a3ffa2a6a60a05a9564f35d35517a533d1f8281
MOC3081M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
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LM285Z-2.5RAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b
LM285Z-2.5RAG
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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NSR05F40NXT5G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BD4425A48EA0CE&compId=NSR05F40NXT5G.PDF?ci_sign=05f8c00715ec2118bb81283864ab98ce8af480e0
NSR05F40NXT5G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.46V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Case: DSN0402-2
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NSR0530P2T5G nsr0530p2-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.62V
Load current: 0.5A
Max. off-state voltage: 30V
Case: SOD923
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NSR05F30NXT5G nsr05f30.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Case: 0402
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1SMB5956BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5956BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1188 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.80 грн
42+9.70 грн
51+8.01 грн
62+6.55 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
1SMB5955BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5955BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 2380 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.90 грн
27+15.53 грн
29+13.99 грн
50+10.59 грн
100+9.38 грн
500+8.09 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
NTBG025N065SC1 ntbg025n065sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NTMYS025N06CLTWG ntmys025n06cl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDB12N50FTM-WS fdb12n50f-d.pdf
FDB12N50FTM-WS
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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NTP110N65S3HF ntp110n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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NTMT110N65S3HF ntmt110n65s3hf-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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NTPF110N65S3HF ntpf110n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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MM3Z3V3T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z3V3T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 34440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.84 грн
74+5.50 грн
97+4.21 грн
199+2.04 грн
261+1.55 грн
338+1.20 грн
500+1.12 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
NTBLS1D1N08H ntbls1d1n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Power dissipation: 311W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Kind of channel: enhancement
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NTBLS1D5N08MC ntbls1d5n08mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 1.53mΩ
Power dissipation: 2.9W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
Kind of channel: enhancement
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NTBLS1D5N10MCTXG NTBLS1D5N10MC-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 161W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
Kind of channel: enhancement
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NTBLS1D7N08H ntbls1d7n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Power dissipation: 83W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
Kind of channel: enhancement
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NTBLS1D7N10MCTXG NTBLS1D7N10MC-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Power dissipation: 147W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Kind of channel: enhancement
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SS32 SS32_SS39.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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NTD20N06T4G ntd20n06-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2487 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+132.37 грн
5+107.55 грн
10+100.28 грн
50+83.29 грн
100+76.02 грн
200+69.55 грн
500+62.27 грн
1000+56.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDA16N50-F109 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD923142AC3A0C7&compId=FDA16N50_F109.PDF?ci_sign=c603ddf6113d634b6762760ffa586cc84b7053d3
FDA16N50-F109
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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FDA16N50LDTU FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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1N5239BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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FDG1024NZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEAA033AFB1E28&compId=FDG1024NZ.pdf?ci_sign=2dd81f2da8a73f94804271db1a5248d982297911
FDG1024NZ
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
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FST3125DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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FST3125MTCX FAIRS26272-1.pdf?t.download=true&u=5oefqw
FST3125MTCX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
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NCP130BMX080TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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NCP130AMX080TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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FGH75T65SHDTL4 fgh75t65shdtl4-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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FGH75T65SQDNL4 fgh75t65sqdnl4-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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NTBG020N120SC1 ntbg020n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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MOC8050M pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72
MOC8050M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8.5µs
Turn-off time: 95µs
Number of channels: 1
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NTLJS2103PTBG ntljs2103p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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FCB260N65S3 fcb260n65s3-d.pdf
FCB260N65S3
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
на замовлення 784 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+248.20 грн
10+163.35 грн
25+145.56 грн
100+135.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FCD260N65S3 fcd260n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
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NTPF360N65S3H ntpf360n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Power dissipation: 26W
Gate charge: 17.5nC
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NTND31225CZTAG ntnd31225cz-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
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MC33262DR2G mc34262-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
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MC33262PG description mc34262-d.pdf
MC33262PG
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
на замовлення 143 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.64 грн
10+63.89 грн
25+61.46 грн
50+54.99 грн
100+53.37 грн
Мінімальне замовлення: 6
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FAN4800AUN fan4800cu-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FAN4800AUM fan4800cu-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FUSB2805MLX pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A093ACDFD2259&compId=FUSB2805.pdf?ci_sign=02d0f2713126d4acd3c9bf4ffe66460232cabeb9
Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI,USB 2.0; transceiver; 2.7÷4.5VDC; MLP32
Type of integrated circuit: interface
Interface: ULPI; USB 2.0
Kind of integrated circuit: transceiver
Data transfer rate: 0.48Gbps
Supply voltage: 2.7...4.5V DC
Case: MLP32
Mounting: SMD
Operating temperature: -40...85°C
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