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CAV24C256YE-GT3 ONSEMI CAV24C256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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NCP1246BLD065R2G ONSEMI ncp1246-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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MC74HC165ADR2G-Q ONSEMI mc74hc165a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: SOIC16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
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MC74HC165ADTR2G-Q ONSEMI mc74hc165a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: TSSOP16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
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MC74HC165AMN2TWG ONSEMI MC74HC165A-D.PDF Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: QFN16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
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MC74HC165AMN2TWG-Q ONSEMI mc74hc165a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of output: complementary
Case: QFN16
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
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FDS3590 FDS3590 ONSEMI fds3590-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
5+92.19 грн
10+59.42 грн
25+48.43 грн
100+36.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.44kA
Power dissipation: 250W
Case: D2PAK-6
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 249nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 778 шт:
термін постачання 14-30 дні (днів)
2+351.59 грн
5+289.55 грн
10+276.12 грн
Мінімальне замовлення: 2
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NVMFS6H800NLT1G ONSEMI nvmfs6h800nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1380 шт:
термін постачання 14-30 дні (днів)
2+356.11 грн
10+259.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KSC2383YTA KSC2383YTA ONSEMI KSC2383.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 3539 шт:
термін постачання 14-30 дні (днів)
13+37.06 грн
20+22.07 грн
50+16.11 грн
100+14.10 грн
500+10.74 грн
1000+9.57 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
KSC2383OTA KSC2383OTA ONSEMI KSC2383.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 1885 шт:
термін постачання 14-30 дні (днів)
14+33.44 грн
17+25.85 грн
19+22.16 грн
50+14.77 грн
100+12.59 грн
500+10.91 грн
Мінімальне замовлення: 14
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FDMS86101 FDMS86101 ONSEMI FDMS86101.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS86101A ONSEMI fdms86101a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86101DC FDMS86101DC ONSEMI fdms86101dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Polarisation: unipolar
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 125W
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NDUL03N150CG ONSEMI ena2218-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
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FDP083N15A-F102 FDP083N15A-F102 ONSEMI fdp083n15a-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 294W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 8.3mΩ
Drain current: 83A
Gate-source voltage: ±20V
Drain-source voltage: 150V
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
2+379.61 грн
5+261.85 грн
10+232.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NTP7D3N15MC ONSEMI ntp7d3n15mc-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 574A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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MC14021BDR2G MC14021BDR2G ONSEMI mc14014b-d.pdf Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 600µA
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Family: HEF4000B
на замовлення 1680 шт:
термін постачання 14-30 дні (днів)
13+36.15 грн
18+23.75 грн
25+19.47 грн
100+15.86 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC14049BDG MC14049BDG ONSEMI mc14049b-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: buffer; inverting
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 6
на замовлення 415 шт:
термін постачання 14-30 дні (днів)
13+36.15 грн
15+28.87 грн
17+24.76 грн
25+18.80 грн
48+18.46 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC14082BDG MC14082BDG ONSEMI MC14082BDG.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
на замовлення 413 шт:
термін постачання 14-30 дні (днів)
21+21.69 грн
30+14.27 грн
55+12.25 грн
Мінімальне замовлення: 21
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MC14025BDG MC14025BDG ONSEMI MC14001B-D.pdf description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
17+27.11 грн
19+22.16 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MC14013BDTR2G ONSEMI MC14013B-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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MC74ACT74DG MC74ACT74DG ONSEMI mc74ac74-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
13+36.15 грн
19+23.25 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC74ACT74DTR2G ONSEMI MC74AC74-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
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ES2D ES2D ONSEMI ES2(A-J)%20N0160%20REV.D.pdf es2d-d.pdf ES2_1.pdf es2a.pdf ES2A SERIES_L2102.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw GK-SMA_ES2A_THRU_ES2J-202604.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
на замовлення 2372 шт:
термін постачання 14-30 дні (днів)
19+24.40 грн
29+14.94 грн
50+12.09 грн
100+11.08 грн
250+10.57 грн
Мінімальне замовлення: 19
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ES2DAF ONSEMI ES2DAF-D.PDF es2daf-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
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NTLJS17D0P03P8ZTAG ONSEMI ntljs17d0p03p8z-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
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NVTFS012P03P8ZTAG ONSEMI Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
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NVTFWS012P03P8ZTAG ONSEMI nvtfs012p03p8z-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
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NCV8187AMT330TAG ONSEMI ncv8187-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1.2A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MC74HC164ADR2G-Q ONSEMI mc74hc164a-d.pdf Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
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MC74HC164ADTR2G-Q ONSEMI mc74hc164a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
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MC74HC164BDR2G ONSEMI mc74hc164b-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Number of channels: 1
Number of inputs: 2
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N93C66BT3ETAG ONSEMI N93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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CAT93C66VI-GT3 ONSEMI CAT93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66VE-GT3 ONSEMI CAV93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66YE-GT3 ONSEMI CAV93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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FQP9N90C FQP9N90C ONSEMI FQP9N90C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
2+320.86 грн
10+195.55 грн
50+182.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FQPF9N90CT FQPF9N90CT ONSEMI FQPF9N90C-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
2+332.61 грн
5+220.73 грн
10+184.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BYW29-200G BYW29-200G ONSEMI BYW29-200G.PDF description Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
на замовлення 1163 шт:
термін постачання 14-30 дні (днів)
6+86.77 грн
7+69.66 грн
10+49.52 грн
50+41.96 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TL331SN4T3G ONSEMI tl331-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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TL331VSN4T3G ONSEMI tl331-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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TL331SN4T1G ONSEMI tl331-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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MBR0530 ONSEMI MBR0530.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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MUN5131DW1T1G MUN5131DW1T1G ONSEMI MUN5131DW1.PDF Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
120+3.89 грн
200+2.14 грн
500+1.90 грн
Мінімальне замовлення: 120
В кошику  од. на суму  грн.
SMUN5131DW1T1G ONSEMI dta123ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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BD13810STU BD13810STU ONSEMI BD136_138_140.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
на замовлення 1163 шт:
термін постачання 14-30 дні (днів)
16+30.10 грн
25+25.26 грн
120+22.32 грн
480+20.06 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BD138G ONSEMI bd136-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
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NRVB5100MFST1G ONSEMI mbr5100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.98V
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MBR5H100MFST1G ONSEMI mbr5h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. forward impulse current: 200A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.73V
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MBR8H100MFST1G ONSEMI mbr8h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB10100MFST1G ONSEMI mbr10100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
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MBR30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRTS30100MFST3G ONSEMI nrts30100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.68V
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NRVB10100MFST3G ONSEMI mbr10100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
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NRVB30H100MFST1G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB8H100MFSWFT1G ONSEMI mbr8h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB8H100MFSWFT3G ONSEMI mbr8h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVTS30100MFST3G ONSEMI nrvts30100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.76V
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CAV24C256YE-GT3 CAV24C256-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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NCP1246BLD065R2G ncp1246-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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MC74HC165ADR2G-Q mc74hc165a-d.pdf
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: SOIC16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
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MC74HC165ADTR2G-Q mc74hc165a-d.pdf
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: TSSOP16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
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MC74HC165AMN2TWG MC74HC165A-D.PDF
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: QFN16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
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MC74HC165AMN2TWG-Q mc74hc165a-d.pdf
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of output: complementary
Case: QFN16
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
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FDS3590 fds3590-d.pdf
FDS3590
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+92.19 грн
10+59.42 грн
25+48.43 грн
100+36.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.44kA
Power dissipation: 250W
Case: D2PAK-6
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 249nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 778 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+351.59 грн
5+289.55 грн
10+276.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NVMFS6H800NLT1G nvmfs6h800nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1380 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+356.11 грн
10+259.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KSC2383YTA KSC2383.pdf
KSC2383YTA
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 3539 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+37.06 грн
20+22.07 грн
50+16.11 грн
100+14.10 грн
500+10.74 грн
1000+9.57 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
KSC2383OTA KSC2383.pdf
KSC2383OTA
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 1885 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+33.44 грн
17+25.85 грн
19+22.16 грн
50+14.77 грн
100+12.59 грн
500+10.91 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
FDMS86101 FDMS86101.pdf
FDMS86101
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS86101A fdms86101a-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86101DC fdms86101dc-d.pdf
FDMS86101DC
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Polarisation: unipolar
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 125W
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NDUL03N150CG ena2218-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
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FDP083N15A-F102 fdp083n15a-d.pdf
FDP083N15A-F102
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 294W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 8.3mΩ
Drain current: 83A
Gate-source voltage: ±20V
Drain-source voltage: 150V
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+379.61 грн
5+261.85 грн
10+232.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NTP7D3N15MC ntp7d3n15mc-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 574A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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MC14021BDR2G mc14014b-d.pdf
MC14021BDR2G
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 600µA
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Family: HEF4000B
на замовлення 1680 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+36.15 грн
18+23.75 грн
25+19.47 грн
100+15.86 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC14049BDG mc14049b-d.pdf
MC14049BDG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: buffer; inverting
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 6
на замовлення 415 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+36.15 грн
15+28.87 грн
17+24.76 грн
25+18.80 грн
48+18.46 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC14082BDG MC14082BDG.PDF
MC14082BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
на замовлення 413 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.69 грн
30+14.27 грн
55+12.25 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
MC14025BDG description MC14001B-D.pdf
MC14025BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+27.11 грн
19+22.16 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MC14013BDTR2G MC14013B-D.pdf
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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MC74ACT74DG mc74ac74-d.pdf
MC74ACT74DG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+36.15 грн
19+23.25 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC74ACT74DTR2G MC74AC74-D.pdf
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
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ES2D ES2(A-J)%20N0160%20REV.D.pdf es2d-d.pdf ES2_1.pdf es2a.pdf ES2A SERIES_L2102.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw GK-SMA_ES2A_THRU_ES2J-202604.pdf
ES2D
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
на замовлення 2372 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
19+24.40 грн
29+14.94 грн
50+12.09 грн
100+11.08 грн
250+10.57 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
ES2DAF ES2DAF-D.PDF es2daf-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
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NTLJS17D0P03P8ZTAG ntljs17d0p03p8z-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
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NVTFS012P03P8ZTAG
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
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NVTFWS012P03P8ZTAG nvtfs012p03p8z-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
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NCV8187AMT330TAG ncv8187-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1.2A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MC74HC164ADR2G-Q mc74hc164a-d.pdf
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
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MC74HC164ADTR2G-Q mc74hc164a-d.pdf
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
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MC74HC164BDR2G mc74hc164b-d.pdf
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Number of channels: 1
Number of inputs: 2
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N93C66BT3ETAG N93C66-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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CAT93C66VI-GT3 CAT93C66-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66VE-GT3 CAV93C66-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66YE-GT3 CAV93C66-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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FQP9N90C FQP9N90C.pdf
FQP9N90C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+320.86 грн
10+195.55 грн
50+182.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FQPF9N90CT FQPF9N90C-D.PDF
FQPF9N90CT
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+332.61 грн
5+220.73 грн
10+184.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BYW29-200G description BYW29-200G.PDF
BYW29-200G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
на замовлення 1163 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+86.77 грн
7+69.66 грн
10+49.52 грн
50+41.96 грн
Мінімальне замовлення: 6
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TL331SN4T3G tl331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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TL331VSN4T3G tl331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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TL331SN4T1G tl331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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MBR0530 MBR0530.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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MUN5131DW1T1G MUN5131DW1.PDF
MUN5131DW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
120+3.89 грн
200+2.14 грн
500+1.90 грн
Мінімальне замовлення: 120
В кошику  од. на суму  грн.
SMUN5131DW1T1G dta123ed-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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BD13810STU BD136_138_140.pdf
BD13810STU
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
на замовлення 1163 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+30.10 грн
25+25.26 грн
120+22.32 грн
480+20.06 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BD138G bd136-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
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NRVB5100MFST1G mbr5100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.98V
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MBR5H100MFST1G mbr5h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. forward impulse current: 200A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.73V
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MBR8H100MFST1G mbr8h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB10100MFST1G mbr10100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
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MBR30H100MFST3G mbr30h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRTS30100MFST3G nrts30100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.68V
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NRVB10100MFST3G mbr10100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
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NRVB30H100MFST1G mbr30h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB30H100MFST3G mbr30h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB8H100MFSWFT1G mbr8h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB8H100MFSWFT3G mbr8h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVTS30100MFST3G nrvts30100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.76V
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