| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NTB110N65S3HF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
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MC33275ST-3.3T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Input voltage: 0...20V Operating temperature: -40...125°C Tolerance: ±1% Voltage drop: 1.1V Manufacturer series: MC33275 |
на замовлення 2611 шт: термін постачання 21-30 дні (днів) |
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| NTB150N65S3HF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK Type of transistor: N-MOSFET Power dissipation: 192W Case: D2PAK Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement On-state resistance: 0.15Ω Drain current: 24A Gate-source voltage: ±30V Pulsed drain current: 60A Drain-source voltage: 650V |
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| NTD250N65S3H | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK Type of transistor: N-MOSFET Power dissipation: 106W Case: DPAK Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement On-state resistance: 0.25Ω Drain current: 13A Gate-source voltage: ±30V Pulsed drain current: 36A Drain-source voltage: 650V |
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В кошику од. на суму грн. | |||||||||||||||||
| FDD86367-F085 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3 On-state resistance: 4.2mΩ Case: DPAK3 Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 100A Power dissipation: 227W Gate charge: 68nC Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
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В кошику од. на суму грн. | |||||||||||||||||
| NTBG040N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 43A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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TIP36CG | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 25A Power dissipation: 125W Case: TO247-3 Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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TIP36AG | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 25A Power dissipation: 125W Case: TO247-3 Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| NTD280N60S5Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 39A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement |
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| 2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
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MM3Z9V1T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 3153 шт: термін постачання 21-30 дні (днів) |
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MC14014BDG | ONSEMI |
Category: Shift registersDescription: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B Kind of package: tube Operating temperature: -55...125°C Family: HEF4000B Mounting: SMD Number of channels: 1 Supply voltage: 3...18V DC Case: SOIC16 Kind of integrated circuit: 8bit; shift register Type of integrated circuit: digital Technology: CMOS |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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| NTMFS08N2D5C | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8 Kind of package: reel; tape Case: PQFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 60nC On-state resistance: 2.7mΩ Power dissipation: 138W Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 166A Pulsed drain current: 823A |
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2SA1416S-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89 Case: SOT89 Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Power dissipation: 0.5W Collector current: 1A Collector-emitter voltage: 100V Current gain: 140...280 Polarisation: bipolar |
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В кошику од. на суму грн. | ||||||||||||||||
| 2SA1416T-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
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BC858BWT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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В кошику од. на суму грн. | ||||||||||||||||
| NTMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMFS015N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 54A Pulsed drain current: 423A Power dissipation: 79W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
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2N7002 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||
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MRA4004T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape Max. off-state voltage: 0.4kV Load current: 1A Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Type of diode: rectifying Mounting: SMD Max. forward voltage: 1.18V Max. load current: 30A |
на замовлення 3658 шт: термін постачання 21-30 дні (днів) |
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| NCP308MT300TBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Supply voltage: 1.6...5.5V DC Operating temperature: -40...125°C Case: WDFN6 Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD Type of integrated circuit: supervisor circuit DC supply current: 6µA Maximum output current: 5mA Number of channels: 1 Threshold on-voltage: 2.79V Active logical level: low Kind of RESET output: open drain |
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MOC3023M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Output voltage: 400V Manufacturer series: MOC302XM |
на замовлення 262 шт: термін постачання 21-30 дні (днів) |
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FDH45N50F-F133 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Pulsed drain current: 180A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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1SMB5923BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 8.2V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 2896 шт: термін постачання 21-30 дні (днів) |
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1SMB5942BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 51V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 2273 шт: термін постачання 21-30 дні (днів) |
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| 2SA1552S-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 1.5A Power dissipation: 1W Collector-emitter voltage: 160V |
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В кошику од. на суму грн. | |||||||||||||||||
| 2SA1552S-TL-H | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 1.5A Power dissipation: 1W Collector-emitter voltage: 160V Current gain: 140...280 |
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В кошику од. на суму грн. | |||||||||||||||||
| 2SA1593S-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 2A Power dissipation: 1W Collector-emitter voltage: 100V Current gain: 140...280 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTR5105PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.141A Power dissipation: 0.347W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1144 шт: термін постачання 21-30 дні (днів) |
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BSP52T1G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
на замовлення 770 шт: термін постачання 21-30 дні (днів) |
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BSP52T3G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 1779 шт: термін постачання 21-30 дні (днів) |
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| SZMMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
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DF005S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 362 шт: термін постачання 21-30 дні (днів) |
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| NTBG060N065SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: D2PAK-7 Gate-source voltage: -5...18V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 130A Features of semiconductor devices: Kelvin terminal Technology: SiC Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 85W |
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| FCD600N60Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.4A Pulsed drain current: 22.2A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| FCD600N65S3R0 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 15A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS7660AS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Pulsed drain current: 150A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS0310AS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 100A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
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| FSB50550US | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023 Operating temperature: -40...150°C Topology: MOSFET three-phase bridge Technology: Motion SPM® 5 Mounting: SMD Number of channels: 6 Output current: 2A Operating voltage: 13.5...16.5/0...400V DC Power dissipation: 14.5W Case: SPM5H-023 Collector-emitter voltage: 500V Kind of integrated circuit: 3-phase motor controller; IPM Type of integrated circuit: driver |
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| NTMJS1D4N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 262A Pulsed drain current: 900A Power dissipation: 90W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhancement |
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MC33071DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: 1 Case: SO8 Slew rate: 13V/μs Operating temperature: -40...85°C Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
на замовлення 2339 шт: термін постачання 21-30 дні (днів) |
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| NTP067N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 112A Power dissipation: 266W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
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| NCP551SN50T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 5V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
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FQD2N60CTM-WS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.14A Pulsed drain current: 7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
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| MC74VHC540DWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: bus buffer; inverting; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Family: VHC Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBRS240LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Max. load current: 4A Max. off-state voltage: 40V Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.55V |
на замовлення 2080 шт: термін постачання 21-30 дні (днів) |
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| RB751S40T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
на замовлення 3791 шт: термін постачання 21-30 дні (днів) |
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NTR4170NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| NSVJ5908DSG5T1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.3W Case: MCPH5 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Semiconductor structure: common source Application: automotive industry Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2N6488G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 15A Power dissipation: 75W Case: TO220AB Current gain: 20...150 Mounting: THT Kind of package: tube Frequency: 5MHz |
на замовлення 276 шт: термін постачання 21-30 дні (днів) |
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MMSZ5V6T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZxxT1G |
на замовлення 6295 шт: термін постачання 21-30 дні (днів) |
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MM3Z5V6T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 6012 шт: термін постачання 21-30 дні (днів) |
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| NTMYS014N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 37A Pulsed drain current: 185A Power dissipation: 12W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
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MOC3081M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3081M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM285Z-2.5RAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSR05F40NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.46V Load current: 0.5A Max. forward impulse current: 1A Max. off-state voltage: 40V Case: DSN0402-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NSR0530P2T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.62V Load current: 0.5A Max. off-state voltage: 30V Case: SOD923 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSR05F30NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.43V Load current: 0.5A Max. forward impulse current: 1A Max. off-state voltage: 30V Case: 0402 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1SMB5956BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 1188 шт: термін постачання 21-30 дні (днів) |
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| NTB110N65S3HF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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| MC33275ST-3.3T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...20V
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Manufacturer series: MC33275
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...20V
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Manufacturer series: MC33275
на замовлення 2611 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.35 грн |
| 17+ | 24.75 грн |
| 25+ | 22.56 грн |
| 100+ | 19.73 грн |
| 250+ | 18.84 грн |
| NTB150N65S3HF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
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| NTD250N65S3H |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
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| FDD86367-F085 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NTBG040N120SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| TIP36CG |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 260.39 грн |
| 10+ | 207.02 грн |
| 20+ | 189.23 грн |
| TIP36AG |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.43 грн |
| 10+ | 173.87 грн |
| 30+ | 149.61 грн |
| NTD280N60S5Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 2SA2029M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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| MM3Z9V1T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 3153 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.10 грн |
| 105+ | 3.88 грн |
| 160+ | 2.54 грн |
| 193+ | 2.10 грн |
| 500+ | 1.38 грн |
| 1000+ | 1.22 грн |
| MC14014BDG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Kind of package: tube
Operating temperature: -55...125°C
Family: HEF4000B
Mounting: SMD
Number of channels: 1
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Technology: CMOS
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Kind of package: tube
Operating temperature: -55...125°C
Family: HEF4000B
Mounting: SMD
Number of channels: 1
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Technology: CMOS
на замовлення 480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.48 грн |
| 21+ | 20.06 грн |
| 25+ | 18.20 грн |
| 48+ | 17.14 грн |
| 96+ | 16.25 грн |
| 144+ | 15.77 грн |
| 288+ | 15.12 грн |
| NTMFS08N2D5C |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 2.7mΩ
Power dissipation: 138W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 2.7mΩ
Power dissipation: 138W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
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| 2SA1416S-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.5W
Collector current: 1A
Collector-emitter voltage: 100V
Current gain: 140...280
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.5W
Collector current: 1A
Collector-emitter voltage: 100V
Current gain: 140...280
Polarisation: bipolar
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| 2SA1416T-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
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| BC858BWT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| NTMFS024N06CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMFS015N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 2N7002 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| MRA4004T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.18V
Max. load current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.18V
Max. load current: 30A
на замовлення 3658 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.06 грн |
| 46+ | 8.90 грн |
| 56+ | 7.23 грн |
| 100+ | 6.53 грн |
| 250+ | 5.65 грн |
| 500+ | 5.00 грн |
| 1000+ | 4.36 грн |
| 2500+ | 3.74 грн |
| NCP308MT300TBG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Supply voltage: 1.6...5.5V DC
Operating temperature: -40...125°C
Case: WDFN6
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Type of integrated circuit: supervisor circuit
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Threshold on-voltage: 2.79V
Active logical level: low
Kind of RESET output: open drain
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Supply voltage: 1.6...5.5V DC
Operating temperature: -40...125°C
Case: WDFN6
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Type of integrated circuit: supervisor circuit
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Threshold on-voltage: 2.79V
Active logical level: low
Kind of RESET output: open drain
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| MOC3023M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
на замовлення 262 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.29 грн |
| 15+ | 28.79 грн |
| 50+ | 23.45 грн |
| FDH45N50F-F133 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 437.18 грн |
| 5+ | 342.07 грн |
| 10+ | 305.68 грн |
| 30+ | 303.25 грн |
| 1SMB5923BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 2896 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 36+ | 11.48 грн |
| 40+ | 10.35 грн |
| 46+ | 8.90 грн |
| 52+ | 7.93 грн |
| 100+ | 7.04 грн |
| 500+ | 6.71 грн |
| 1SMB5942BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 2273 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.29 грн |
| 33+ | 12.62 грн |
| 38+ | 10.92 грн |
| 50+ | 9.87 грн |
| 100+ | 8.81 грн |
| 500+ | 7.36 грн |
| 2SA1552S-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
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| 2SA1552S-TL-H |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Current gain: 140...280
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Current gain: 140...280
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| 2SA1593S-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 140...280
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 140...280
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| NTR5105PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 55+ | 7.44 грн |
| 79+ | 5.18 грн |
| 100+ | 4.46 грн |
| 500+ | 4.24 грн |
| BSP52T1G | ![]() |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
на замовлення 770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.58 грн |
| 18+ | 23.45 грн |
| 100+ | 15.12 грн |
| 250+ | 12.86 грн |
| 500+ | 11.48 грн |
| BSP52T3G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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| MMSZ5248BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 1779 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 95+ | 4.29 грн |
| 140+ | 2.90 грн |
| 166+ | 2.45 грн |
| 500+ | 1.71 грн |
| 1000+ | 1.49 грн |
| SZMMSZ5248BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| DF005S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 362 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.89 грн |
| 25+ | 35.18 грн |
| 39+ | 24.96 грн |
| 106+ | 23.60 грн |
| NTBG060N065SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
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| FCD600N60Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCD600N65S3R0 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS7660AS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS0310AS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FSB50550US |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
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| NTMJS1D4N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC33071DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
на замовлення 2339 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 34.77 грн |
| NTP067N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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| NCP551SN50T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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| FQD2N60CTM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74VHC540DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of package: reel; tape
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| MBRS240LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.55V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.55V
на замовлення 2080 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.00 грн |
| 22+ | 18.52 грн |
| 26+ | 15.69 грн |
| 50+ | 13.75 грн |
| 100+ | 12.13 грн |
| 250+ | 10.43 грн |
| 500+ | 9.46 грн |
| 1000+ | 8.65 грн |
| RB751S40T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 3791 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.84 грн |
| 81+ | 5.01 грн |
| 109+ | 3.74 грн |
| 124+ | 3.28 грн |
| 500+ | 2.47 грн |
| 1000+ | 2.20 грн |
| 1500+ | 2.06 грн |
| 3000+ | 1.85 грн |
| NTR4170NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.13 грн |
| 23+ | 17.95 грн |
| 27+ | 15.20 грн |
| 50+ | 10.43 грн |
| 100+ | 9.22 грн |
| 500+ | 8.57 грн |
| NSVJ5908DSG5T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Application: automotive industry
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Application: automotive industry
Gate current: 10mA
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| 2N6488G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
на замовлення 276 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.70 грн |
| 10+ | 44.88 грн |
| 50+ | 37.68 грн |
| 100+ | 34.93 грн |
| MMSZ5V6T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 6295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.10 грн |
| 105+ | 3.88 грн |
| 146+ | 2.78 грн |
| 171+ | 2.38 грн |
| 250+ | 1.95 грн |
| 500+ | 1.67 грн |
| 1000+ | 1.42 грн |
| 1500+ | 1.37 грн |
| MM3Z5V6T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 6012 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.71 грн |
| 74+ | 5.50 грн |
| 95+ | 4.27 грн |
| 116+ | 3.49 грн |
| 142+ | 2.85 грн |
| 500+ | 1.81 грн |
| 1000+ | 1.50 грн |
| 3000+ | 1.21 грн |
| NTMYS014N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MOC3081M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
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| LM285Z-2.5RAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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| NSR05F40NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.46V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Case: DSN0402-2
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.46V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Case: DSN0402-2
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| NSR0530P2T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.62V
Load current: 0.5A
Max. off-state voltage: 30V
Case: SOD923
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.62V
Load current: 0.5A
Max. off-state voltage: 30V
Case: SOD923
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| NSR05F30NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Case: 0402
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Case: 0402
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| 1SMB5956BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1188 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 42+ | 9.70 грн |
| 51+ | 8.01 грн |
| 62+ | 6.55 грн |





















