| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MC74HC00ADTR2G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; -55÷125°C; 1uA; HC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Supply voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| N24C64UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; I2C; 8kx8bit; US8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 8kx8bit Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBD6050LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW Mounting: SMD Case: SOT23 Semiconductor structure: single diode Type of diode: switching Capacitance: 5pF Reverse recovery time: 50ns Leakage current: 0.1mA Load current: 0.2A Power dissipation: 0.4W Max. forward voltage: 1.25V Max. off-state voltage: 250V |
на замовлення 2400 шт: термін постачання 14-30 дні (днів) |
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74LCX125BQX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA Technology: CMOS Case: QFN14 Type of integrated circuit: digital Manufacturer series: LCX Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA Number of channels: 4 Supply voltage: 2...3.6V DC Kind of integrated circuit: buffer; non-inverting Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTLUS030N03CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.9A Pulsed drain current: 20A Power dissipation: 1.49W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BAS21 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.6A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape Max. load current: 0.7A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAS21HT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 625mA Power dissipation: 0.2W Kind of package: reel; tape Max. load current: 0.5A |
на замовлення 7770 шт: термін постачання 14-30 дні (днів) |
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BAS21AHT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 2232 шт: термін постачання 14-30 дні (днів) |
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BAS21SLT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: double series Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 6099 шт: термін постачання 14-30 дні (днів) |
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SBAS21DW5T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 5pF Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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BAS21DW5T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 5pF Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.385W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS21LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BAS21TMR6T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: triple independent Case: SC74 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1654BD133R2G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 1 Operating voltage: 9...20V DC Topology: boost Case: SO8 |
на замовлення 2185 шт: термін постачання 14-30 дні (днів) |
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MJ15022G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 200V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Collector current: 16A Collector-emitter voltage: 200V Frequency: 4MHz |
на замовлення 137 шт: термін постачання 14-30 дні (днів) |
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HCPL2630M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 5kV Case: DIP8 Slew rate: 10kV/μs Manufacturer series: HCPL2630M Max. off-state voltage: 5V Transfer rate: 10Mbps Output voltage: -500mV...7V Turn-off time: 30ns Turn-on time: 30ns |
на замовлення 240 шт: термін постачання 14-30 дні (днів) |
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HCPL0601 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; SO8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV Case: SO8 Slew rate: 10kV/μs Turn-off time: 12ns Turn-on time: 50ns |
на замовлення 176 шт: термін постачання 14-30 дні (днів) |
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HCPL2631M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 5kV Case: DIP8 Slew rate: 10kV/μs Manufacturer series: HCPL2631M Max. off-state voltage: 5V Transfer rate: 10Mbps Output voltage: -500mV...7V Turn-off time: 30ns Turn-on time: 30ns |
на замовлення 460 шт: термін постачання 14-30 дні (днів) |
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| NB3H5150-01MNTXG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: digital; QFN32,VQFN32 Type of integrated circuit: digital Case: QFN32; VQFN32 Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NB3H5150MNTXG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: digital; QFN32,VQFN32 Type of integrated circuit: digital Case: QFN32; VQFN32 Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2SC6144SG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 50V; 10A; 25W; TO220FP Case: TO220FP Mounting: THT Type of transistor: NPN Kind of package: tube Collector current: 10A Power dissipation: 25W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 330MHz Polarisation: bipolar |
на замовлення 138 шт: термін постачання 14-30 дні (днів) |
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H11AV1AM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Collector-emitter voltage: 70V Case: DIP6 Max. off-state voltage: 6V Turn-on time: 15µs CTR@If: 100-300%@10mA Turn-off time: 15µs |
на замовлення 1667 шт: термін постачання 14-30 дні (днів) |
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H11AV1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Collector-emitter voltage: 70V Case: DIP6 Max. off-state voltage: 6V Turn-on time: 15µs CTR@If: 100-300%@10mA Turn-off time: 15µs |
на замовлення 692 шт: термін постачання 14-30 дні (днів) |
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BZX79C5V1 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C |
на замовлення 3967 шт: термін постачання 14-30 дні (днів) |
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| BZX79C5V1-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; Ammo Pack; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1SMB5925BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 9400 шт: термін постачання 14-30 дні (днів) |
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| SZ1SMB5925BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BDW94C | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 12A Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: bulk |
на замовлення 165 шт: термін постачання 14-30 дні (днів) |
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BDW94CFTU | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 12A Power dissipation: 30W Case: TO220FP Current gain: 100...20000 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM3Z3V9T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 2900 шт: термін постачання 14-30 дні (днів) |
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SZMM3Z3V9T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BC857CLT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 100mA; 300mW; SC59 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SC59 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC14ADR2G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter,Schmitt trigger; Ch: 6; IN: 6; CMOS; SMD; 1uA Type of integrated circuit: digital Case: SOIC14 Family: HC Number of channels: 6 Mounting: SMD Operating temperature: -55...125°C Quiescent current: 1µA Number of inputs: 6 Supply voltage: 2...6V Kind of integrated circuit: inverter; Schmitt trigger Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC14ADTR2G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter,Schmitt trigger; Ch: 6; IN: 6; CMOS; SMD; 1uA Type of integrated circuit: digital Case: TSSOP14 Family: HC Number of channels: 6 Mounting: SMD Operating temperature: -55...125°C Quiescent current: 1µA Number of inputs: 6 Supply voltage: 2...6V Kind of integrated circuit: inverter; Schmitt trigger Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMMSZ5246BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FSV20100V | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 270A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BD237G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 2A Power dissipation: 25W Case: TO225 Mounting: THT Kind of package: bulk Frequency: 3MHz Current gain: 40 |
на замовлення 473 шт: термін постачання 14-30 дні (днів) |
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LM224DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 7mV Operating temperature: -25...85°C Bandwidth: 1MHz Case: TSSOP14 Type of integrated circuit: operational amplifier Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMT Input offset current: 100nA Input offset voltage: 7mV Voltage supply range: ± 1.5...16V DC; 3...32V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQD30N06TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14.3A Pulsed drain current: 90.8A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1201 шт: термін постачання 14-30 дні (днів) |
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FCP22N60N | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±45V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCP68T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
на замовлення 718 шт: термін постачання 14-30 дні (днів) |
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SBCP68T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 50...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC238ADR2G-Q | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; IN: 3; CMOS; SMD; SOIC16; HC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of inputs: 3 Mounting: SMD Case: SOIC16 Family: HC Operating temperature: -55...125°C Number of outputs: 8 Supply voltage: 2...6V Delay time: 210ns Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC238ADTR2G-Q | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; IN: 3; SMD; TSSOP16; HC; OUT: 8 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of inputs: 3 Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -55...125°C Number of outputs: 8 Supply voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC4538ADG | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷6VDC; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 800µA |
на замовлення 652 шт: термін постачання 14-30 дні (днів) |
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MC74HC4538ADR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC4538ADTR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NLV74HC4538ADR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
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| MC74HC273ADTR2G-Q | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; SMD; TSSOP20; HC; 4uA; 2÷6V; 35MHz Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Family: HC Quiescent current: 4µA Supply voltage: 2...6V Clock frequency: 35MHz Trigger: positive-edge-triggered |
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| MC74HC273ADWR2G-Q | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; SMD; SOIC20; 4uA; 2÷6V; 35MHz Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Mounting: SMD Case: SOIC20 Operating temperature: -55...125°C Quiescent current: 4µA Supply voltage: 2...6V Clock frequency: 35MHz Trigger: positive-edge-triggered |
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В кошику од. на суму грн. | |||||||||||||||||||
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MUN5335DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
на замовлення 3334 шт: термін постачання 14-30 дні (днів) |
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SBC847BPDW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 4586 шт: термін постачання 14-30 дні (днів) |
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SMUN5335DW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
на замовлення 4030 шт: термін постачання 14-30 дні (днів) |
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| FCD600N60Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.4A Pulsed drain current: 22.2A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| FCD600N65S3R0 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 15A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MMBF0201NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.24A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
| MVMBF0201NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 300mA; Idm: 0.75A; 225mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.3A Pulsed drain current: 0.75A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJF15030G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP Mounting: THT Case: TO220FP Type of transistor: NPN Kind of package: tube Power dissipation: 36W Collector current: 8A Current gain: 40 Collector-emitter voltage: 150V Frequency: 30MHz Polarisation: bipolar |
на замовлення 764 шт: термін постачання 14-30 дні (днів) |
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| FDPC5030SG | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8 Mounting: SMD Case: PQFN8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Kind of package: reel; tape Gate charge: 17/39nC On-state resistance: 5/2.4mΩ Power dissipation: 23/25W Gate-source voltage: ±20/±12V Drain-source voltage: 30V Drain current: 56/84A Semiconductor structure: asymmetric Polarisation: unipolar |
на замовлення 2993 шт: термін постачання 14-30 дні (днів) |
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KSP42TA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 40 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| MC74HC00ADTR2G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; -55÷125°C; 1uA; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; -55÷125°C; 1uA; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
товару немає в наявності
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| N24C64UVTG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 8kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 8kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
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| MMBD6050LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Mounting: SMD
Case: SOT23
Semiconductor structure: single diode
Type of diode: switching
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Mounting: SMD
Case: SOT23
Semiconductor structure: single diode
Type of diode: switching
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
на замовлення 2400 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.04 грн |
| 99+ | 4.28 грн |
| 132+ | 3.19 грн |
| 148+ | 2.85 грн |
| 250+ | 2.49 грн |
| 500+ | 2.16 грн |
| 1000+ | 1.80 грн |
| 1500+ | 1.59 грн |
| 74LCX125BQX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Technology: CMOS
Case: QFN14
Type of integrated circuit: digital
Manufacturer series: LCX
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 4
Supply voltage: 2...3.6V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Technology: CMOS
Case: QFN14
Type of integrated circuit: digital
Manufacturer series: LCX
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 4
Supply voltage: 2...3.6V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
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| NTLUS030N03CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BAS21 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.6A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. load current: 0.7A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.6A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. load current: 0.7A
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| BAS21HT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
Max. load current: 0.5A
на замовлення 7770 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 100+ | 4.20 грн |
| 127+ | 3.32 грн |
| 182+ | 2.31 грн |
| 250+ | 1.92 грн |
| 500+ | 1.70 грн |
| 1000+ | 1.45 грн |
| 3000+ | 1.22 грн |
| 6000+ | 1.12 грн |
| BAS21AHT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 2232 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 99+ | 4.28 грн |
| 136+ | 3.11 грн |
| 154+ | 2.73 грн |
| 250+ | 2.35 грн |
| 500+ | 2.10 грн |
| 1000+ | 1.71 грн |
| BAS21SLT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 6099 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 112+ | 3.78 грн |
| 150+ | 2.80 грн |
| 172+ | 2.45 грн |
| 250+ | 2.06 грн |
| 500+ | 1.83 грн |
| 1000+ | 1.79 грн |
| SBAS21DW5T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.56 грн |
| 47+ | 8.98 грн |
| 100+ | 6.31 грн |
| 500+ | 4.54 грн |
| 1000+ | 4.01 грн |
| 3000+ | 3.78 грн |
| BAS21DW5T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.385W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.385W
Kind of package: reel; tape
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| BAS21LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
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| BAS21TMR6T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| NCP1654BD133R2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 1
Operating voltage: 9...20V DC
Topology: boost
Case: SO8
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 1
Operating voltage: 9...20V DC
Topology: boost
Case: SO8
на замовлення 2185 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.73 грн |
| 10+ | 62.94 грн |
| MJ15022G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 16A
Collector-emitter voltage: 200V
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 16A
Collector-emitter voltage: 200V
Frequency: 4MHz
на замовлення 137 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 503.43 грн |
| 5+ | 430.54 грн |
| HCPL2630M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Case: DIP8
Slew rate: 10kV/μs
Manufacturer series: HCPL2630M
Max. off-state voltage: 5V
Transfer rate: 10Mbps
Output voltage: -500mV...7V
Turn-off time: 30ns
Turn-on time: 30ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Case: DIP8
Slew rate: 10kV/μs
Manufacturer series: HCPL2630M
Max. off-state voltage: 5V
Transfer rate: 10Mbps
Output voltage: -500mV...7V
Turn-off time: 30ns
Turn-on time: 30ns
на замовлення 240 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 133.77 грн |
| 10+ | 88.96 грн |
| 25+ | 79.73 грн |
| 30+ | 78.05 грн |
| 50+ | 74.69 грн |
| 100+ | 70.50 грн |
| 200+ | 65.46 грн |
| HCPL0601 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: SO8
Slew rate: 10kV/μs
Turn-off time: 12ns
Turn-on time: 50ns
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: SO8
Slew rate: 10kV/μs
Turn-off time: 12ns
Turn-on time: 50ns
на замовлення 176 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 103.94 грн |
| 10+ | 55.06 грн |
| 50+ | 50.78 грн |
| 100+ | 49.01 грн |
| HCPL2631M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Case: DIP8
Slew rate: 10kV/μs
Manufacturer series: HCPL2631M
Max. off-state voltage: 5V
Transfer rate: 10Mbps
Output voltage: -500mV...7V
Turn-off time: 30ns
Turn-on time: 30ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Case: DIP8
Slew rate: 10kV/μs
Manufacturer series: HCPL2631M
Max. off-state voltage: 5V
Transfer rate: 10Mbps
Output voltage: -500mV...7V
Turn-off time: 30ns
Turn-on time: 30ns
на замовлення 460 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 128.34 грн |
| 10+ | 77.21 грн |
| 30+ | 62.94 грн |
| 50+ | 58.75 грн |
| NB3H5150-01MNTXG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Type of integrated circuit: digital
Case: QFN32; VQFN32
Mounting: SMD
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Type of integrated circuit: digital
Case: QFN32; VQFN32
Mounting: SMD
Operating temperature: -40...85°C
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| NB3H5150MNTXG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Type of integrated circuit: digital
Case: QFN32; VQFN32
Mounting: SMD
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Type of integrated circuit: digital
Case: QFN32; VQFN32
Mounting: SMD
Operating temperature: -40...85°C
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| 2SC6144SG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 10A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 10A
Power dissipation: 25W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 330MHz
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 10A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 10A
Power dissipation: 25W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 330MHz
Polarisation: bipolar
на замовлення 138 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.96 грн |
| 10+ | 51.11 грн |
| 50+ | 38.27 грн |
| 100+ | 34.41 грн |
| H11AV1AM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 70V
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 15µs
CTR@If: 100-300%@10mA
Turn-off time: 15µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 70V
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 15µs
CTR@If: 100-300%@10mA
Turn-off time: 15µs
на замовлення 1667 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.58 грн |
| 16+ | 27.44 грн |
| 50+ | 22.49 грн |
| H11AV1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 70V
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 15µs
CTR@If: 100-300%@10mA
Turn-off time: 15µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 70V
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 15µs
CTR@If: 100-300%@10mA
Turn-off time: 15µs
на замовлення 692 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 62.36 грн |
| 12+ | 37.77 грн |
| 25+ | 32.65 грн |
| 50+ | 30.72 грн |
| BZX79C5V1 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
на замовлення 3967 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.04 грн |
| 61+ | 6.88 грн |
| 75+ | 5.62 грн |
| 166+ | 2.53 грн |
| 250+ | 2.03 грн |
| 500+ | 1.96 грн |
| BZX79C5V1-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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| 1SMB5925BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 9400 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.60 грн |
| 24+ | 17.79 грн |
| 28+ | 15.36 грн |
| 50+ | 9.48 грн |
| 100+ | 8.39 грн |
| SZ1SMB5925BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| BDW94C |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
на замовлення 165 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 86.77 грн |
| 7+ | 69.16 грн |
| 10+ | 60.43 грн |
| 25+ | 48.01 грн |
| 100+ | 39.87 грн |
| BDW94CFTU |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
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| MM3Z3V9T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 50+ | 8.56 грн |
| 61+ | 6.88 грн |
| 146+ | 2.88 грн |
| 500+ | 1.88 грн |
| 1000+ | 1.64 грн |
| SZMM3Z3V9T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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| BC857CLT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 300mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 300mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
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| MC74HC14ADR2G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 6; IN: 6; CMOS; SMD; 1uA
Type of integrated circuit: digital
Case: SOIC14
Family: HC
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 6
Supply voltage: 2...6V
Kind of integrated circuit: inverter; Schmitt trigger
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 6; IN: 6; CMOS; SMD; 1uA
Type of integrated circuit: digital
Case: SOIC14
Family: HC
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 6
Supply voltage: 2...6V
Kind of integrated circuit: inverter; Schmitt trigger
Technology: CMOS
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| MC74HC14ADTR2G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 6; IN: 6; CMOS; SMD; 1uA
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 6
Supply voltage: 2...6V
Kind of integrated circuit: inverter; Schmitt trigger
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 6; IN: 6; CMOS; SMD; 1uA
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: 6
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 6
Supply voltage: 2...6V
Kind of integrated circuit: inverter; Schmitt trigger
Technology: CMOS
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| SZMMSZ5246BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| FSV20100V |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 270A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 270A
Kind of package: reel; tape
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| BD237G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Current gain: 40
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Current gain: 40
на замовлення 473 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.63 грн |
| 10+ | 46.16 грн |
| 25+ | 39.53 грн |
| 100+ | 31.89 грн |
| 250+ | 27.86 грн |
| LM224DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 7mV
Operating temperature: -25...85°C
Bandwidth: 1MHz
Case: TSSOP14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMT
Input offset current: 100nA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 7mV
Operating temperature: -25...85°C
Bandwidth: 1MHz
Case: TSSOP14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMT
Input offset current: 100nA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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| FQD30N06TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1201 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.13 грн |
| 100+ | 41.71 грн |
| 500+ | 36.59 грн |
| FCP22N60N |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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| BCP68T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 718 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 19+ | 22.49 грн |
| 100+ | 14.44 грн |
| 500+ | 10.99 грн |
| SBCP68T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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| MC74HC238ADR2G-Q |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; IN: 3; CMOS; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 3
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Number of outputs: 8
Supply voltage: 2...6V
Delay time: 210ns
Technology: CMOS
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; IN: 3; CMOS; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 3
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Number of outputs: 8
Supply voltage: 2...6V
Delay time: 210ns
Technology: CMOS
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| MC74HC238ADTR2G-Q |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; IN: 3; SMD; TSSOP16; HC; OUT: 8
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Number of outputs: 8
Supply voltage: 2...6V
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; IN: 3; SMD; TSSOP16; HC; OUT: 8
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Number of outputs: 8
Supply voltage: 2...6V
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| MC74HC4538ADG |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷6VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 800µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷6VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 800µA
на замовлення 652 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.23 грн |
| 24+ | 20.31 грн |
| 96+ | 20.23 грн |
| MC74HC4538ADR2G |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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| MC74HC4538ADTR2G |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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| NLV74HC4538ADR2G |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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| MC74HC273ADTR2G-Q |
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; SMD; TSSOP20; HC; 4uA; 2÷6V; 35MHz
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Quiescent current: 4µA
Supply voltage: 2...6V
Clock frequency: 35MHz
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; SMD; TSSOP20; HC; 4uA; 2÷6V; 35MHz
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Quiescent current: 4µA
Supply voltage: 2...6V
Clock frequency: 35MHz
Trigger: positive-edge-triggered
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| MC74HC273ADWR2G-Q |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; SMD; SOIC20; 4uA; 2÷6V; 35MHz
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Quiescent current: 4µA
Supply voltage: 2...6V
Clock frequency: 35MHz
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; SMD; SOIC20; 4uA; 2÷6V; 35MHz
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Quiescent current: 4µA
Supply voltage: 2...6V
Clock frequency: 35MHz
Trigger: positive-edge-triggered
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| MUN5335DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 3334 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.27 грн |
| 42+ | 10.16 грн |
| 60+ | 7.00 грн |
| 100+ | 5.94 грн |
| 500+ | 4.11 грн |
| 1000+ | 3.54 грн |
| 1500+ | 3.25 грн |
| 3000+ | 2.82 грн |
| SBC847BPDW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 4586 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| 85+ | 4.95 грн |
| 126+ | 3.33 грн |
| 500+ | 2.54 грн |
| 1000+ | 2.31 грн |
| 3000+ | 2.06 грн |
| SMUN5335DW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
на замовлення 4030 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.20 грн |
| 40+ | 10.91 грн |
| 100+ | 9.65 грн |
| 500+ | 8.73 грн |
| 3000+ | 8.39 грн |
| FCD600N60Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCD600N65S3R0 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MMBF0201NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| MVMBF0201NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 300mA; Idm: 0.75A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.3A
Pulsed drain current: 0.75A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 300mA; Idm: 0.75A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.3A
Pulsed drain current: 0.75A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MJF15030G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Mounting: THT
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Power dissipation: 36W
Collector current: 8A
Current gain: 40
Collector-emitter voltage: 150V
Frequency: 30MHz
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Mounting: THT
Case: TO220FP
Type of transistor: NPN
Kind of package: tube
Power dissipation: 36W
Collector current: 8A
Current gain: 40
Collector-emitter voltage: 150V
Frequency: 30MHz
Polarisation: bipolar
на замовлення 764 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.21 грн |
| 10+ | 64.62 грн |
| 50+ | 62.94 грн |
| FDPC5030SG |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8
Mounting: SMD
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Gate charge: 17/39nC
On-state resistance: 5/2.4mΩ
Power dissipation: 23/25W
Gate-source voltage: ±20/±12V
Drain-source voltage: 30V
Drain current: 56/84A
Semiconductor structure: asymmetric
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8
Mounting: SMD
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Gate charge: 17/39nC
On-state resistance: 5/2.4mΩ
Power dissipation: 23/25W
Gate-source voltage: ±20/±12V
Drain-source voltage: 30V
Drain current: 56/84A
Semiconductor structure: asymmetric
Polarisation: unipolar
на замовлення 2993 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.92 грн |
| 10+ | 63.78 грн |
| 100+ | 55.39 грн |
| 500+ | 50.36 грн |
| 1000+ | 47.00 грн |
| KSP42TA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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