| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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KSD1616AGBU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Type of transistor: NPN Mounting: THT Power dissipation: 0.75W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 200...400 Frequency: 160MHz Kind of package: bulk Polarisation: bipolar Case: TO92 |
на замовлення 6544 шт: термін постачання 21-30 дні (днів) |
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KSD1616AGTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed Type of transistor: NPN Mounting: THT Power dissipation: 0.75W Collector current: 1A Collector-emitter voltage: 60V Current gain: 200...400 Frequency: 160MHz Kind of package: Ammo Pack Polarisation: bipolar Case: TO92 Formed |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSD1616AYTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Type of transistor: NPN Mounting: THT Power dissipation: 0.75W Collector current: 1A Collector-emitter voltage: 60V Current gain: 135...270 Frequency: 160MHz Kind of package: Ammo Pack Polarisation: bipolar Case: TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| KSD880YTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 30W Case: TO220AB Current gain: 100...200 Mounting: THT Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSA928AYTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 1W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Collector current: 2A Collector-emitter voltage: 30V Current gain: 160...320 Frequency: 120MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSC2383OTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 1948 шт: термін постачання 21-30 дні (днів) |
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KSC1008CYTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Case: TO92 Formed Type of transistor: NPN Mounting: THT Collector current: 0.7A Power dissipation: 0.8W Collector-emitter voltage: 60V Current gain: 120...240 Frequency: 50MHz Kind of package: Ammo Pack Polarisation: bipolar |
на замовлення 1295 шт: термін постачання 21-30 дні (днів) |
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2N7002 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 68591 шт: термін постачання 21-30 дні (днів) |
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NTHL075N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NLSV1T34DFT2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Case: SOT353 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 2µA Supply voltage: 0.9...4.5V DC Number of outputs: 1 |
на замовлення 958 шт: термін постачання 21-30 дні (днів) |
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1N4448 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 4A Power dissipation: 0.5W |
на замовлення 1876 шт: термін постачання 21-30 дні (днів) |
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4N25M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V Mounting: THT Collector-emitter voltage: 30V CTR@If: 20%@10mA Insulation voltage: 0.85kV Case: DIP6 Type of optocoupler: optocoupler Kind of output: transistor Turn-off time: 2µs Turn-on time: 2µs Number of channels: 1 |
на замовлення 1126 шт: термін постачання 21-30 дні (днів) |
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1N4004G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 1839 шт: термін постачання 21-30 дні (днів) |
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| 6N136VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 250ns Turn-off time: 260ns Max. off-state voltage: 5V Number of pins: 8 Manufacturer series: 6N136 |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
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MC74ACT139DG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Technology: TTL Mounting: SMD Case: SOIC16 Manufacturer series: ACT Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube |
на замовлення 219 шт: термін постачання 21-30 дні (днів) |
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6N137SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 30ns Manufacturer series: 6N137M |
на замовлення 1742 шт: термін постачання 21-30 дні (днів) |
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| 6N136SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; 5kV Type of optocoupler: optocoupler Insulation voltage: 5kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSA1298YMTF | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.8A Power dissipation: 0.2W Case: SOT23; TO236AB Current gain: 100...320 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
на замовлення 1673 шт: термін постачання 21-30 дні (днів) |
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FXMA2104UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 4 Case: MLP12 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 4 Number of inputs: 4 Frequency: 26MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing |
на замовлення 3636 шт: термін постачання 21-30 дні (днів) |
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1N4005G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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UF4007 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Power dissipation: 2.08W Leakage current: 75µA Capacitance: 17pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FGH40N60SMD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Power dissipation: 174W Case: TO247-3 Mounting: THT Gate charge: 119nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Collector current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGAF40N60SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 58W; TO3PF Type of transistor: IGBT Power dissipation: 58W Case: TO3PF Mounting: THT Gate charge: 119nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Collector current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGAF40N60UFTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 77nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 160A Collector-emitter voltage: 600V Collector current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGB20N60SFD-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Version: ESD Application: ignition systems Features of semiconductor devices: logic level Gate charge: 63nC Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGA40N65SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 174W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 174W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH60T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH60T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 79nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGA40T65SHD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO3P Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 72.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FGB40T65SPD-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Application: ignition systems Version: ESD Features of semiconductor devices: logic level Gate charge: 36nC |
на замовлення 742 шт: термін постачання 21-30 дні (днів) |
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| FGH40T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Gate charge: 72.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SHDF-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 68nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 80nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL40T65MQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 86nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL40T65MQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 80nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TL431ACDG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: tube Maximum output current: 0.1A Operating voltage: 2.495...36V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TL431ACDR2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Maximum output current: 0.1A Operating voltage: 2.495...36V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL431ACLPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431ACLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS36 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
на замовлення 1551 шт: термін постачання 21-30 дні (днів) |
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TL431BCLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431BILPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN3100TSX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SOT23-5 Output current: -2.5...1.8A Number of channels: 1 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 14ns Kind of package: reel; tape Kind of output: non-inverting |
на замовлення 1924 шт: термін постачання 21-30 дні (днів) |
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| TL431CDR2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL431CLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431CLPRPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431ILPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4937RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
на замовлення 2954 шт: термін постачання 21-30 дні (днів) |
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MPSA42 | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Frequency: 50MHz Kind of package: bulk |
на замовлення 2981 шт: термін постачання 21-30 дні (днів) |
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1N4733A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N47xxA |
на замовлення 328 шт: термін постачання 21-30 дні (днів) |
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1N4749A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA |
на замовлення 835 шт: термін постачання 21-30 дні (днів) |
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BAS16WT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SC70 Max. forward voltage: 1V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 7619 шт: термін постачання 21-30 дні (днів) |
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BAS16XV2T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 7715 шт: термін постачання 21-30 дні (днів) |
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BAS16XV2T5G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 1810 шт: термін постачання 21-30 дні (днів) |
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NCP5181DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.2...1.4A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 60ns Pulse fall time: 40ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
на замовлення 1734 шт: термін постачання 21-30 дні (днів) |
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BAT54LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 7.6pF Max. forward voltage: 0.52V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.2W Reverse recovery time: 5ns Max. load current: 0.3A |
на замовлення 1268 шт: термін постачання 21-30 дні (днів) |
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FXL5T244BQX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 5 Case: DQFN14 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.1...3.6V DC Number of outputs: 5 Number of inputs: 5 |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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NCP51460SN33T1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 3.3V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...100°C Kind of package: reel; tape Maximum output current: 20mA Operating voltage: 4.2...28V |
на замовлення 2727 шт: термін постачання 21-30 дні (днів) |
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MC14073BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Case: SO14 Type of integrated circuit: digital Kind of gate: AND Kind of package: tube Technology: CMOS Number of channels: triple; 3 Family: HEF4000B |
на замовлення 379 шт: термін постачання 21-30 дні (днів) |
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MMUN2214LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| KSD1616AGBU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: bulk
Polarisation: bipolar
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: bulk
Polarisation: bipolar
Case: TO92
на замовлення 6544 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.25 грн |
| 18+ | 23.29 грн |
| 22+ | 19.05 грн |
| 100+ | 8.65 грн |
| 1000+ | 7.57 грн |
| KSD1616AGTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Case: TO92 Formed
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Case: TO92 Formed
товару немає в наявності
В кошику
од. на суму грн.
| KSD1616AYTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 135...270
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 135...270
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Case: TO92
товару немає в наявності
В кошику
од. на суму грн.
| KSD880YTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
товару немає в наявності
В кошику
од. на суму грн.
| KSA928AYTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
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В кошику
од. на суму грн.
| KSC2383OTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 1948 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.25 грн |
| 18+ | 23.37 грн |
| 100+ | 15.31 грн |
| 250+ | 12.98 грн |
| 500+ | 11.56 грн |
| 1000+ | 10.81 грн |
| KSC1008CYTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
на замовлення 1295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.29 грн |
| 29+ | 14.72 грн |
| 36+ | 11.56 грн |
| 100+ | 7.82 грн |
| 500+ | 5.41 грн |
| 1000+ | 4.91 грн |
| 2N7002 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 68591 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.56 грн |
| 22+ | 19.47 грн |
| 26+ | 16.47 грн |
| 50+ | 11.73 грн |
| 100+ | 10.40 грн |
| 500+ | 8.48 грн |
| 1000+ | 7.99 грн |
| 1500+ | 7.74 грн |
| 3000+ | 7.49 грн |
| NTHL075N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NLSV1T34DFT2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
на замовлення 958 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.12 грн |
| 10+ | 44.25 грн |
| 25+ | 38.43 грн |
| 100+ | 33.19 грн |
| 500+ | 30.94 грн |
| 1N4448 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
на замовлення 1876 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.17 грн |
| 143+ | 2.91 грн |
| 197+ | 2.12 грн |
| 250+ | 1.82 грн |
| 500+ | 1.61 грн |
| 1000+ | 1.39 грн |
| 4N25M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V
Mounting: THT
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V
Mounting: THT
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
на замовлення 1126 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.77 грн |
| 20+ | 20.80 грн |
| 50+ | 16.55 грн |
| 100+ | 14.89 грн |
| 500+ | 13.23 грн |
| 1N4004G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 1839 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.06 грн |
| 68+ | 6.16 грн |
| 81+ | 5.16 грн |
| 135+ | 3.09 грн |
| 500+ | 2.70 грн |
| 6N136VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 250ns
Turn-off time: 260ns
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 250ns
Turn-off time: 260ns
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136
на замовлення 284 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 181.85 грн |
| 200+ | 148.07 грн |
| MC74ACT139DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
на замовлення 219 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 87.79 грн |
| 11+ | 40.76 грн |
| 48+ | 33.11 грн |
| 96+ | 30.28 грн |
| 144+ | 28.70 грн |
| 6N137SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
на замовлення 1742 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.54 грн |
| 12+ | 37.27 грн |
| 25+ | 34.02 грн |
| 50+ | 31.61 грн |
| 100+ | 29.45 грн |
| 500+ | 28.62 грн |
| 6N136SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
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| KSA1298YMTF |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
на замовлення 1673 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.44 грн |
| 48+ | 8.73 грн |
| 100+ | 4.93 грн |
| 500+ | 3.39 грн |
| 1000+ | 2.94 грн |
| FXMA2104UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
на замовлення 3636 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 41.92 грн |
| 1N4005G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.96 грн |
| 60+ | 6.99 грн |
| 67+ | 6.24 грн |
| 81+ | 5.19 грн |
| 105+ | 3.97 грн |
| 500+ | 2.98 грн |
| 1000+ | 2.66 грн |
| 2000+ | 2.57 грн |
| UF4007 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
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| FGH40N60SMD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
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| FGAF40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
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| FGAF40N60UFTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Collector current: 20A
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| FGB20N60SFD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
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| FGA40N65SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| FGH60T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
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| FGH60T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
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| FGA40T65SHD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
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| FGB40T65SPD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
на замовлення 742 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 374.46 грн |
| 5+ | 303.62 грн |
| 10+ | 273.68 грн |
| 25+ | 232.08 грн |
| 100+ | 222.93 грн |
| FGH40T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 72.2nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 72.2nC
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| FGH40T65SHDF-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
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| FGH40T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
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| FGHL40T65MQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
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| FGHL40T65MQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
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| TL431ACDG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
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| TL431ACDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
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| TL431ACLPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431ACLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| SS36 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
на замовлення 1551 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.04 грн |
| 15+ | 28.87 грн |
| 50+ | 23.79 грн |
| 100+ | 21.63 грн |
| 250+ | 20.63 грн |
| TL431BCLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431BILPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| FAN3100TSX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -2.5...1.8A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -2.5...1.8A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of output: non-inverting
на замовлення 1924 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.52 грн |
| 10+ | 61.14 грн |
| 25+ | 52.82 грн |
| 100+ | 41.68 грн |
| 250+ | 40.59 грн |
| TL431CDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| TL431CLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431CLPRPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431ILPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| 1N4937RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
на замовлення 2954 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.75 грн |
| 50+ | 8.32 грн |
| 55+ | 7.57 грн |
| 70+ | 5.99 грн |
| 100+ | 5.37 грн |
| 250+ | 4.59 грн |
| 500+ | 4.05 грн |
| 1000+ | 3.54 грн |
| MPSA42 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
на замовлення 2981 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.29 грн |
| 31+ | 13.81 грн |
| 100+ | 8.07 грн |
| 250+ | 6.82 грн |
| 500+ | 6.07 грн |
| 1N4733A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
на замовлення 328 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.12 грн |
| 45+ | 9.32 грн |
| 56+ | 7.49 грн |
| 100+ | 4.55 грн |
| 1N4749A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
на замовлення 835 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.65 грн |
| 50+ | 8.48 грн |
| 57+ | 7.32 грн |
| 84+ | 4.99 грн |
| 100+ | 4.24 грн |
| 250+ | 3.48 грн |
| 500+ | 3.02 грн |
| BAS16WT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 7619 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.17 грн |
| 99+ | 4.24 грн |
| 178+ | 2.35 грн |
| 500+ | 1.61 грн |
| 1000+ | 1.41 грн |
| 3000+ | 1.15 грн |
| BAS16XV2T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 7715 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.48 грн |
| 136+ | 3.08 грн |
| 179+ | 2.33 грн |
| 204+ | 2.05 грн |
| 500+ | 1.51 грн |
| 1000+ | 1.32 грн |
| 1500+ | 1.23 грн |
| 3000+ | 1.08 грн |
| BAS16XV2T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 1810 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.17 грн |
| 88+ | 4.74 грн |
| 147+ | 2.84 грн |
| 500+ | 2.20 грн |
| NCP5181DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
на замовлення 1734 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 129.90 грн |
| 5+ | 111.47 грн |
| 25+ | 107.31 грн |
| 100+ | 95.66 грн |
| 250+ | 89.84 грн |
| BAT54LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 7.6pF
Max. forward voltage: 0.52V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Reverse recovery time: 5ns
Max. load current: 0.3A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 7.6pF
Max. forward voltage: 0.52V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Reverse recovery time: 5ns
Max. load current: 0.3A
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.27 грн |
| 105+ | 3.99 грн |
| 145+ | 2.88 грн |
| 168+ | 2.48 грн |
| 500+ | 1.77 грн |
| 1000+ | 1.54 грн |
| FXL5T244BQX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
на замовлення 71 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.29 грн |
| 10+ | 55.73 грн |
| 25+ | 54.07 грн |
| NCP51460SN33T1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Kind of package: reel; tape
Maximum output current: 20mA
Operating voltage: 4.2...28V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Kind of package: reel; tape
Maximum output current: 20mA
Operating voltage: 4.2...28V
на замовлення 2727 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.92 грн |
| 11+ | 39.68 грн |
| 25+ | 34.11 грн |
| 100+ | 27.28 грн |
| 250+ | 26.04 грн |
| MC14073BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
на замовлення 379 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.56 грн |
| 22+ | 18.97 грн |
| 25+ | 17.14 грн |
| 55+ | 15.81 грн |
| 110+ | 14.89 грн |
| 275+ | 13.81 грн |
| MMUN2214LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.

























