| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 2SA1552S-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 1.5A Power dissipation: 1W Collector-emitter voltage: 160V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2SA1552S-TL-H | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 1.5A Power dissipation: 1W Collector-emitter voltage: 160V Current gain: 140...280 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2SA1593S-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 2A Power dissipation: 1W Collector-emitter voltage: 100V Current gain: 140...280 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTR5105PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.141A Power dissipation: 0.347W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1154 шт: термін постачання 21-30 дні (днів) |
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BSP52T1G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
на замовлення 1070 шт: термін постачання 21-30 дні (днів) |
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BSP52T3G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZMMSZ5240BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Power dissipation: 0.5W Zener voltage: 10V Manufacturer series: MMSZ52xxB Application: automotive industry Case: SOD123 |
на замовлення 2190 шт: термін постачання 21-30 дні (днів) |
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MMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 3374 шт: термін постачання 21-30 дні (днів) |
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| SZMMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DF005S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 362 шт: термін постачання 21-30 дні (днів) |
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| NTBG060N065SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 130A Power dissipation: 85W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCD600N60Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.4A Pulsed drain current: 22.2A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCD600N65S3R0 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 15A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMS7660AS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Pulsed drain current: 150A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMS0310AS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 100A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FSB50550US | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023 Number of channels: 6 Operating voltage: 13.5...16.5/0...400V DC Collector-emitter voltage: 500V Kind of integrated circuit: 3-phase motor controller; IPM Type of integrated circuit: driver Case: SPM5H-023 Topology: MOSFET three-phase bridge Technology: Motion SPM® 5 Mounting: SMD Operating temperature: -40...150°C Power dissipation: 14.5W Output current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMJS1D4N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 262A Pulsed drain current: 900A Power dissipation: 90W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDN327N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 423 шт: термін постачання 21-30 дні (днів) |
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MC33071DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: 1 Case: SO8 Slew rate: 13V/μs Operating temperature: -40...85°C Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Voltage supply range: ± 1.5...22V DC; 3...44V DC |
на замовлення 2340 шт: термін постачання 21-30 дні (днів) |
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| NTP067N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 112A Power dissipation: 266W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP551SN50T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 5V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQD2N60CTM-WS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.14A Pulsed drain current: 7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC74VHC540DWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: bus buffer; inverting; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Family: VHC Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBRS240LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.55V Load current: 2A Max. load current: 4A Max. off-state voltage: 40V |
на замовлення 2657 шт: термін постачання 21-30 дні (днів) |
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| RB751S40T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
на замовлення 3791 шт: термін постачання 21-30 дні (днів) |
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NTR4170NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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NC7WZ16P6X | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Case: SC70-6 Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 10µA |
на замовлення 2027 шт: термін постачання 21-30 дні (днів) |
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| NSVJ5908DSG5T1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.3W Case: MCPH5 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Semiconductor structure: common source Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2N6488G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB Mounting: THT Type of transistor: NPN Kind of package: tube Collector current: 15A Power dissipation: 75W Polarisation: bipolar Current gain: 20...150 Collector-emitter voltage: 80V Frequency: 5MHz Case: TO220AB |
на замовлення 355 шт: термін постачання 21-30 дні (днів) |
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MMSZ5V6T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZxxT1G |
на замовлення 6295 шт: термін постачання 21-30 дні (днів) |
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MM3Z5V6T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 6012 шт: термін постачання 21-30 дні (днів) |
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| NTMYS014N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 37A Pulsed drain current: 185A Power dissipation: 12W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOC3081M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3081M Output voltage: 800V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM285Z-2.5RAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSR05F40NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.46V Load current: 0.5A Max. forward impulse current: 1A Max. off-state voltage: 40V Case: DSN0402-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NSR0530P2T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.62V Load current: 0.5A Max. off-state voltage: 30V Case: SOD923 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSR05F30NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.43V Load current: 0.5A Max. forward impulse current: 1A Max. off-state voltage: 30V Case: 0402 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1SMB5956BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 1188 шт: термін постачання 21-30 дні (днів) |
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1SMB5953BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 150V; SMD; reel,tape; SMB; single diode Case: SMB Kind of package: reel; tape Power dissipation: 3W Tolerance: ±5% Zener voltage: 150V Manufacturer series: 1SMB59xxBT3G Semiconductor structure: single diode Mounting: SMD Type of diode: Zener |
на замовлення 1578 шт: термін постачання 21-30 дні (днів) |
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1SMB5955BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 180V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 2380 шт: термін постачання 21-30 дні (днів) |
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| NTBG025N065SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 284A Power dissipation: 197W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMYS025N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 103A Power dissipation: 7.6W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 27.5mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDB12N50FTM-WS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 165W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 30nC On-state resistance: 0.7Ω Kind of channel: enhancement Technology: UniFET™ Drain current: 6.9A Pulsed drain current: 46A Gate-source voltage: ±30V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTP110N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMT110N65S3HF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTPF110N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM3Z3V3T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 40580 шт: термін постачання 21-30 дні (днів) |
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MM5Z3V3T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD523F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G |
на замовлення 2368 шт: термін постачання 21-30 дні (днів) |
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| NTBLS1D1N08H | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 166nC On-state resistance: 1.05mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 311W Drain current: 351A Pulsed drain current: 900A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTBLS1D5N08MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W Mounting: SMD Case: H-PSOF8L Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 111nC On-state resistance: 1.53mΩ Power dissipation: 2.9W Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 298A Pulsed drain current: 4487A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTBLS1D5N10MCTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W Mounting: SMD Kind of channel: enhancement Case: H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 131nC On-state resistance: 1.5mΩ Power dissipation: 161W Drain current: 312A Drain-source voltage: 100V Pulsed drain current: 2055A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTBLS1D7N08H | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 83W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 121nC On-state resistance: 1.7mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 203A Pulsed drain current: 1173A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTBLS1D7N10MCTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 147W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 115nC On-state resistance: 1.8mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 272A Pulsed drain current: 2137A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSR58 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 8mA Power dissipation: 0.25W Case: SOT23 Gate-source voltage: -40V On-state resistance: 60Ω Mounting: SMD Gate current: 50mA Kind of package: reel; tape |
на замовлення 904 шт: термін постачання 21-30 дні (днів) |
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| SS32 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.5V Power dissipation: 2.27W Load current: 3A Max. off-state voltage: 20V Max. forward impulse current: 100A Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTD20N06T4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDA16N50-F109 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: UniFET™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDA16N50LDTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.3A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: DMOS; UniFET™ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5239BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDG1024NZ | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Drain current: 1.2A Gate-source voltage: ±8V Kind of package: reel; tape Drain-source voltage: 20V Kind of channel: enhancement Type of transistor: N-MOSFET x2 Technology: PowerTrench® Case: SC70-6; SC88; SOT363 Mounting: SMD Polarisation: unipolar Gate charge: 2.6nC Power dissipation: 0.36W On-state resistance: 389mΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SA1552S-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1552S-TL-H |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Current gain: 140...280
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Current gain: 140...280
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В кошику
од. на суму грн.
| 2SA1593S-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 140...280
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 140...280
товару немає в наявності
В кошику
од. на суму грн.
| NTR5105PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1154 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.82 грн |
| 51+ | 7.86 грн |
| 73+ | 5.49 грн |
| 100+ | 4.73 грн |
| 205+ | 4.56 грн |
| 500+ | 4.25 грн |
| BSP52T1G | ![]() |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
на замовлення 1070 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.88 грн |
| 14+ | 28.81 грн |
| 83+ | 11.35 грн |
| 227+ | 10.71 грн |
| 1000+ | 10.55 грн |
| BSP52T3G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SZMMSZ5240BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.5W
Zener voltage: 10V
Manufacturer series: MMSZ52xxB
Application: automotive industry
Case: SOD123
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 0.5W
Zener voltage: 10V
Manufacturer series: MMSZ52xxB
Application: automotive industry
Case: SOD123
на замовлення 2190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.40 грн |
| 56+ | 7.14 грн |
| 63+ | 6.35 грн |
| 77+ | 5.16 грн |
| 100+ | 4.92 грн |
| 218+ | 4.29 грн |
| 600+ | 4.05 грн |
| MMSZ5248BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 3374 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 85+ | 4.68 грн |
| 125+ | 3.17 грн |
| 148+ | 2.68 грн |
| 500+ | 1.88 грн |
| 665+ | 1.40 грн |
| 1829+ | 1.33 грн |
| SZMMSZ5248BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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В кошику
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| DF005S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 362 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.07 грн |
| 25+ | 34.52 грн |
| 39+ | 24.50 грн |
| 106+ | 23.16 грн |
| NTBG060N065SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 130A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 130A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| FCD600N60Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCD600N65S3R0 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS7660AS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS0310AS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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В кошику
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| FSB50550US |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
Case: SPM5H-023
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 14.5W
Output current: 2A
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
Case: SPM5H-023
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 14.5W
Output current: 2A
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| NTMJS1D4N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDN327N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 423 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.33 грн |
| 18+ | 22.54 грн |
| 21+ | 19.13 грн |
| 50+ | 13.25 грн |
| 85+ | 11.03 грн |
| 233+ | 10.48 грн |
| MC33071DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Voltage supply range: ± 1.5...22V DC; 3...44V DC
на замовлення 2340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 34.12 грн |
| NTP067N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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| NCP551SN50T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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| FQD2N60CTM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74VHC540DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of package: reel; tape
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| MBRS240LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.55V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.55V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 40V
на замовлення 2657 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.91 грн |
| 20+ | 20.32 грн |
| 25+ | 17.14 грн |
| 50+ | 15.08 грн |
| 100+ | 13.33 грн |
| 132+ | 7.06 грн |
| 362+ | 6.75 грн |
| RB751S40T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 3791 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 81+ | 4.92 грн |
| 109+ | 3.67 грн |
| 124+ | 3.22 грн |
| 500+ | 2.43 грн |
| 1000+ | 2.16 грн |
| 1500+ | 2.02 грн |
| 3000+ | 1.82 грн |
| NTR4170NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.35 грн |
| 21+ | 19.05 грн |
| 25+ | 16.11 грн |
| 50+ | 11.11 грн |
| 100+ | 9.76 грн |
| 101+ | 9.29 грн |
| 277+ | 8.81 грн |
| NC7WZ16P6X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SC70-6
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SC70-6
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
на замовлення 2027 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.97 грн |
| 53+ | 7.62 грн |
| 64+ | 6.27 грн |
| 110+ | 3.63 грн |
| 137+ | 2.90 грн |
| 366+ | 2.55 грн |
| 1000+ | 2.54 грн |
| 1006+ | 2.41 грн |
| NSVJ5908DSG5T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Semiconductor structure: common source
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Semiconductor structure: common source
Application: automotive industry
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| 2N6488G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 80V
Frequency: 5MHz
Case: TO220AB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 80V
Frequency: 5MHz
Case: TO220AB
на замовлення 355 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.23 грн |
| 10+ | 49.20 грн |
| 26+ | 37.14 грн |
| 70+ | 35.08 грн |
| MMSZ5V6T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 6295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 5.98 грн |
| 105+ | 3.81 грн |
| 146+ | 2.73 грн |
| 171+ | 2.33 грн |
| 250+ | 1.91 грн |
| 500+ | 1.63 грн |
| 1000+ | 1.40 грн |
| 1500+ | 1.35 грн |
| MM3Z5V6T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 6012 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.55 грн |
| 74+ | 5.40 грн |
| 95+ | 4.19 грн |
| 116+ | 3.43 грн |
| 142+ | 2.80 грн |
| 500+ | 1.78 грн |
| 1000+ | 1.48 грн |
| 3000+ | 1.19 грн |
| NTMYS014N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MOC3081M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
Output voltage: 800V
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
Output voltage: 800V
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| LM285Z-2.5RAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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| NSR05F40NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.46V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Case: DSN0402-2
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.46V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Case: DSN0402-2
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| NSR0530P2T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.62V
Load current: 0.5A
Max. off-state voltage: 30V
Case: SOD923
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.62V
Load current: 0.5A
Max. off-state voltage: 30V
Case: SOD923
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| NSR05F30NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Case: 0402
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Case: 0402
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| 1SMB5956BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1188 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.53 грн |
| 42+ | 9.52 грн |
| 51+ | 7.86 грн |
| 62+ | 6.43 грн |
| 1SMB5953BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 150V; SMD; reel,tape; SMB; single diode
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 150V
Manufacturer series: 1SMB59xxBT3G
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 150V; SMD; reel,tape; SMB; single diode
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 150V
Manufacturer series: 1SMB59xxBT3G
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
на замовлення 1578 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.93 грн |
| 26+ | 15.55 грн |
| 50+ | 12.38 грн |
| 100+ | 11.03 грн |
| 105+ | 8.97 грн |
| 287+ | 8.49 грн |
| 500+ | 8.33 грн |
| 1000+ | 8.17 грн |
| 1SMB5955BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 2380 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.08 грн |
| 24+ | 16.98 грн |
| 26+ | 15.32 грн |
| 50+ | 11.59 грн |
| 100+ | 10.32 грн |
| 107+ | 8.73 грн |
| 295+ | 8.25 грн |
| 500+ | 7.94 грн |
| NTBG025N065SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NTMYS025N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDB12N50FTM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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| NTP110N65S3HF |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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| NTMT110N65S3HF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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| NTPF110N65S3HF |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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| MM3Z3V3T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 40580 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 74+ | 5.40 грн |
| 97+ | 4.13 грн |
| 199+ | 2.00 грн |
| 261+ | 1.52 грн |
| 338+ | 1.17 грн |
| 500+ | 1.10 грн |
| MM5Z3V3T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
на замовлення 2368 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.40 грн |
| 66+ | 6.03 грн |
| 97+ | 4.13 грн |
| 113+ | 3.53 грн |
| 200+ | 3.05 грн |
| 407+ | 2.29 грн |
| 1000+ | 2.25 грн |
| 1119+ | 2.17 грн |
| NTBLS1D1N08H |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 166nC
On-state resistance: 1.05mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 311W
Drain current: 351A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 166nC
On-state resistance: 1.05mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 311W
Drain current: 351A
Pulsed drain current: 900A
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| NTBLS1D5N08MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Mounting: SMD
Case: H-PSOF8L
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 111nC
On-state resistance: 1.53mΩ
Power dissipation: 2.9W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Mounting: SMD
Case: H-PSOF8L
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 111nC
On-state resistance: 1.53mΩ
Power dissipation: 2.9W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
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| NTBLS1D5N10MCTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Mounting: SMD
Kind of channel: enhancement
Case: H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 161W
Drain current: 312A
Drain-source voltage: 100V
Pulsed drain current: 2055A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Mounting: SMD
Kind of channel: enhancement
Case: H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 161W
Drain current: 312A
Drain-source voltage: 100V
Pulsed drain current: 2055A
Kind of package: reel; tape
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| NTBLS1D7N08H |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
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| NTBLS1D7N10MCTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 147W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 147W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
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| BSR58 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Gate current: 50mA
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Gate current: 50mA
Kind of package: reel; tape
на замовлення 904 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.91 грн |
| 19+ | 21.90 грн |
| 50+ | 13.02 грн |
| 100+ | 11.27 грн |
| 132+ | 7.06 грн |
| 362+ | 6.67 грн |
| SS32 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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| NTD20N06T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDA16N50-F109 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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| FDA16N50LDTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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| 1N5239BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
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| FDG1024NZ |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
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од. на суму грн.



















