| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NV24C64MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NV24C64UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C64WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C64YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SBAV70LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 880 шт: термін постачання 21-30 дні (днів) |
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MOC3053M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3053M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14511BDG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 4 Type of integrated circuit: digital Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch Number of channels: 1 Number of inputs: 4 Supply voltage: 3...18V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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RFD14N05SM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 5229 шт: термін постачання 21-30 дні (днів) |
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| 74LCX16501MTDX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX Case: TSSOP56 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: 18bit; bus transceiver Family: LCX Operating temperature: -40...85°C Type of integrated circuit: digital Supply voltage: 1.5...3.6V DC Number of channels: 18 Manufacturer series: LCX Technology: CMOS Integrated circuit features: 5V tolerant on inputs/outputs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SBC847BLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 453 шт: термін постачання 21-30 дні (днів) |
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BVSS123LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.225W On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 1865 шт: термін постачання 21-30 дні (днів) |
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MC14504BDR2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16 Technology: CMOS Type of integrated circuit: digital Mounting: SMD Case: SO16 Number of channels: 6 Kind of integrated circuit: level shifter |
на замовлення 1576 шт: термін постачання 21-30 дні (днів) |
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MC14025BDR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Case: SO14 Type of integrated circuit: digital Kind of gate: NOR Kind of package: reel; tape Technology: CMOS Number of channels: triple; 3 Family: HEF4000B |
на замовлення 1480 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT125ADTRG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14 Supply voltage: 2...5.5V DC Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: VHCT Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting Mounting: SMD Operating temperature: -55...125°C Quiescent current: 40µA Number of channels: 4 Kind of output: 3-state Case: TSSOP14 |
на замовлення 4975 шт: термін постачання 21-30 дні (днів) |
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KST10MTF | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Power dissipation: 0.35W Case: SOT23 Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz Kind of transistor: RF |
на замовлення 1123 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC244DTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Family: VHC Technology: CMOS Case: TSSOP20 Manufacturer series: VHC Kind of package: tube Mounting: SMD Operating temperature: -55...125°C Number of channels: 8 Supply voltage: 2...5.5V DC Kind of output: 3-state Kind of integrated circuit: 3-state; bus buffer; octal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74VHC244DTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Family: VHC Technology: CMOS Case: TSSOP20 Manufacturer series: VHC Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Number of channels: 8 Supply voltage: 2...5.5V DC Kind of output: 3-state Kind of integrated circuit: 3-state; bus buffer; octal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74VHC244DWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC Type of integrated circuit: digital Family: VHC Technology: CMOS Case: SO20WB Manufacturer series: VHC Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Number of channels: 8 Supply voltage: 2...5.5V DC Kind of output: 3-state Kind of integrated circuit: 3-state; bus buffer; octal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C4V7LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: BZX84C |
на замовлення 6869 шт: термін постачання 21-30 дні (днів) |
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NSS12100XV6T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.65W Collector current: 1A Collector-emitter voltage: 12V Current gain: 100 Application: automotive industry Polarisation: bipolar |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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BSR16 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Case: SOT23; TO236AB Polarisation: bipolar Mounting: SMD Type of transistor: PNP Collector current: 0.8A Power dissipation: 0.35W Collector-emitter voltage: 60V Frequency: 300MHz Kind of package: reel; tape |
на замовлення 2076 шт: термін постачання 21-30 дні (днів) |
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MC14081BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Case: SO14 Type of integrated circuit: digital Kind of gate: AND Kind of package: tube Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
на замовлення 218 шт: термін постачання 21-30 дні (днів) |
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MC14081BDTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Case: TSSOP14 Type of integrated circuit: digital Kind of gate: AND Kind of package: reel; tape Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
на замовлення 1900 шт: термін постачання 21-30 дні (днів) |
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MC14557BDWG | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; tube Type of integrated circuit: digital Kind of integrated circuit: shift register Supply voltage: 3...18V DC Case: SO16WB Mounting: SMD Operating temperature: -55...125°C Kind of package: tube Family: HEF4000B Number of channels: 1 Number of inputs: 12 Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMS86101 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FCMT299N60 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 125W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SBCP56-10T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
на замовлення 181 шт: термін постачання 21-30 дні (днів) |
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SBAS16HT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.75V Max. forward impulse current: 36A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Max. load current: 1A |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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MC74ACT125DTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Manufacturer series: ACT Kind of output: 3-state |
на замовлення 1736 шт: термін постачання 21-30 дні (днів) |
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FAN3111ESX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SOT23-5 Output current: -0.9...1.1A Number of channels: 1 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 18ns Pulse fall time: 17ns Kind of package: reel; tape |
на замовлення 1046 шт: термін постачання 21-30 дні (днів) |
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NCP361SNT1G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.2...20V Threshold on-voltage: 3V Kind of output: transistor Type of integrated circuit: driver Application: USB |
на замовлення 1893 шт: термін постачання 21-30 дні (днів) |
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FIN1002M5X | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: digital; line receiver,differential,translator; LVDS; SMD Technology: LVDS Type of integrated circuit: digital Kind of package: tube Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 3...3.6V DC Kind of integrated circuit: differential; line receiver; translator Case: SOT23-5 |
на замовлення 1645 шт: термін постачання 21-30 дні (днів) |
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2SB815-7-TB-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59 Case: SC59 Kind of package: reel; tape Frequency: 250MHz Type of transistor: PNP Mounting: SMD Power dissipation: 0.2W Collector current: 0.7A Collector-emitter voltage: 15V Current gain: 300...600 Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP81080DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -800...500mA Supply voltage: 5.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 19ns Pulse fall time: 17ns |
на замовлення 767 шт: термін постачання 21-30 дні (днів) |
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SS12 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Power dissipation: 1.1W |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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BSS123 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: logic level Type of transistor: N-MOSFET Gate charge: 2.5nC Drain current: 0.17A Power dissipation: 0.36W On-state resistance: 12Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 6670 шт: термін постачання 21-30 дні (днів) |
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BSS123W | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.2W Pulsed drain current: 0.68A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 1060 шт: термін постачання 21-30 дні (днів) |
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1N5408G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Mounting: THT Leakage current: 50µA Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: bulk Case: DO27 Type of diode: rectifying Semiconductor structure: single diode |
на замовлення 1097 шт: термін постачання 21-30 дні (днів) |
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MOC3022M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 400V Kind of output: without zero voltage crossing driver Case: DIP6 Trigger current: 10mA Mounting: THT Manufacturer series: MOC302XM |
на замовлення 527 шт: термін постачання 21-30 дні (днів) |
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MC74VHC1G08DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC |
на замовлення 2825 шт: термін постачання 21-30 дні (днів) |
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SBAS16HT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 36A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N5407G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVTSM260EV2T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. forward impulse current: 50A Max. off-state voltage: 60V Case: POWERMITE Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVTSM260EV2T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. forward impulse current: 50A Max. off-state voltage: 60V Case: POWERMITE Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SBC857BDW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 578 шт: термін постачання 21-30 дні (днів) |
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1N4148WT | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.1A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 1A Case: SOD523F Max. forward voltage: 1V Reverse recovery time: 4ns Max. load current: 0.2A Capacitance: 4pF |
на замовлення 6174 шт: термін постачання 21-30 дні (днів) |
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BAT54XV2T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape |
на замовлення 18251 шт: термін постачання 21-30 дні (днів) |
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MMSZ5239BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 5927 шт: термін постачання 21-30 дні (днів) |
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| FDMS86182 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 364A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FXMAR2102UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Case: MLP8 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 2 Number of inputs: 2 Frequency: 50MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing |
на замовлення 4681 шт: термін постачання 21-30 дні (днів) |
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BC639 | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: TO92 Mounting: THT Frequency: 100MHz Power: 0.8W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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J310 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92 Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60mA Case: TO92 Mounting: THT Power: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS8550 | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP41C-TU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N5401G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Mounting: THT Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC550CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: TO92 Mounting: THT Frequency: 300MHz Power: 0.5W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LF353N | ONSEMI |
Category: THT operational amplifiersDescription: IC: operational amplifier; 4MHz; Ch: 2; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 16V/μs Operating temperature: 0...70°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SS25 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS25FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74ACT74DR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered Manufacturer series: ACT |
на замовлення 1866 шт: термін постачання 21-30 дні (днів) |
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| NV24C64MUW3VLTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NV24C64UVLT2G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| CAV24C64WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| CAV24C64YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SBAV70LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.71 грн |
| 82+ | 5.00 грн |
| 114+ | 3.61 грн |
| 129+ | 3.20 грн |
| MOC3053M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
товару немає в наявності
В кошику
од. на суму грн.
| MC14511BDG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 4
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 4
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.98 грн |
| 14+ | 29.52 грн |
| RFD14N05SM9A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 5229 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 13+ | 33.29 грн |
| 25+ | 31.74 грн |
| 100+ | 30.92 грн |
| 74LCX16501MTDX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Case: TSSOP56
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: 18bit; bus transceiver
Family: LCX
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 1.5...3.6V DC
Number of channels: 18
Manufacturer series: LCX
Technology: CMOS
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Case: TSSOP56
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: 18bit; bus transceiver
Family: LCX
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 1.5...3.6V DC
Number of channels: 18
Manufacturer series: LCX
Technology: CMOS
Integrated circuit features: 5V tolerant on inputs/outputs
товару немає в наявності
В кошику
од. на суму грн.
| SBC847BLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 453 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.90 грн |
| 47+ | 8.77 грн |
| 100+ | 6.07 грн |
| BVSS123LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.225W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.225W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 1865 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.73 грн |
| 24+ | 17.39 грн |
| 30+ | 14.10 грн |
| 100+ | 6.89 грн |
| 500+ | 5.90 грн |
| MC14504BDR2G | ![]() |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Number of channels: 6
Kind of integrated circuit: level shifter
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Number of channels: 6
Kind of integrated circuit: level shifter
на замовлення 1576 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.72 грн |
| 10+ | 51.09 грн |
| 25+ | 43.46 грн |
| 50+ | 38.38 грн |
| 100+ | 34.69 грн |
| MC14025BDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: reel; tape
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: reel; tape
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
на замовлення 1480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.14 грн |
| 22+ | 19.11 грн |
| 25+ | 17.14 грн |
| 100+ | 15.83 грн |
| MC74VHCT125ADTRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Supply voltage: 2...5.5V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: VHCT
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 4
Kind of output: 3-state
Case: TSSOP14
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Supply voltage: 2...5.5V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: VHCT
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 4
Kind of output: 3-state
Case: TSSOP14
на замовлення 4975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.33 грн |
| 16+ | 26.57 грн |
| 18+ | 23.78 грн |
| 25+ | 20.58 грн |
| 100+ | 17.14 грн |
| 250+ | 15.91 грн |
| 500+ | 15.83 грн |
| KST10MTF |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: SOT23
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: SOT23
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Kind of transistor: RF
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.13 грн |
| 67+ | 6.15 грн |
| 104+ | 3.96 грн |
| 500+ | 2.93 грн |
| 1000+ | 2.57 грн |
| MC74VHC244DTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHC
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHC
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
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| MC74VHC244DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
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| MC74VHC244DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: SO20WB
Manufacturer series: VHC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: SO20WB
Manufacturer series: VHC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
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| BZX84C4V7LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
на замовлення 6869 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.18 грн |
| 87+ | 4.76 грн |
| 103+ | 4.02 грн |
| 158+ | 2.61 грн |
| 191+ | 2.16 грн |
| 500+ | 1.44 грн |
| 1000+ | 1.23 грн |
| 3000+ | 1.00 грн |
| 6000+ | 0.89 грн |
| NSS12100XV6T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.75 грн |
| BSR16 |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
на замовлення 2076 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.91 грн |
| 20+ | 20.75 грн |
| 50+ | 14.19 грн |
| 100+ | 11.97 грн |
| 500+ | 8.36 грн |
| 1000+ | 7.30 грн |
| 1500+ | 6.81 грн |
| MC14081BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
на замовлення 218 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.81 грн |
| 15+ | 28.70 грн |
| 25+ | 25.59 грн |
| 55+ | 22.96 грн |
| 110+ | 21.32 грн |
| MC14081BDTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: TSSOP14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: TSSOP14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
на замовлення 1900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.00 грн |
| 11+ | 38.13 грн |
| 25+ | 31.16 грн |
| 100+ | 23.45 грн |
| 250+ | 19.85 грн |
| MC14557BDWG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; tube
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; tube
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Number of channels: 1
Number of inputs: 12
Technology: CMOS
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| FDMS86101 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FCMT299N60 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
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| SBCP56-10T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
на замовлення 181 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.33 грн |
| 26+ | 15.83 грн |
| 100+ | 12.71 грн |
| SBAS16HT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 122+ | 3.36 грн |
| 129+ | 3.19 грн |
| MC74ACT125DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
на замовлення 1736 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.51 грн |
| 17+ | 24.85 грн |
| 25+ | 22.06 грн |
| 100+ | 19.19 грн |
| 500+ | 18.21 грн |
| FAN3111ESX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -0.9...1.1A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 18ns
Pulse fall time: 17ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -0.9...1.1A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 18ns
Pulse fall time: 17ns
Kind of package: reel; tape
на замовлення 1046 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 85.66 грн |
| 10+ | 51.34 грн |
| 25+ | 41.74 грн |
| 100+ | 31.24 грн |
| 200+ | 30.75 грн |
| NCP361SNT1G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
Type of integrated circuit: driver
Application: USB
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
Type of integrated circuit: driver
Application: USB
на замовлення 1893 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.22 грн |
| 12+ | 35.92 грн |
| 14+ | 29.77 грн |
| 25+ | 24.60 грн |
| FIN1002M5X |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
на замовлення 1645 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.95 грн |
| 10+ | 47.40 грн |
| 25+ | 38.87 грн |
| 100+ | 29.60 грн |
| 2SB815-7-TB-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
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| NCP81080DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -800...500mA
Supply voltage: 5.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 19ns
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -800...500mA
Supply voltage: 5.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 19ns
Pulse fall time: 17ns
на замовлення 767 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.13 грн |
| 7+ | 68.06 грн |
| 25+ | 60.68 грн |
| 100+ | 55.76 грн |
| SS12 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.55 грн |
| 30+ | 13.94 грн |
| 100+ | 12.96 грн |
| 250+ | 12.30 грн |
| 500+ | 11.07 грн |
| 1000+ | 10.91 грн |
| BSS123 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Gate charge: 2.5nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Gate charge: 2.5nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 6670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.01 грн |
| 43+ | 9.59 грн |
| 64+ | 6.49 грн |
| 100+ | 5.48 грн |
| 500+ | 3.84 грн |
| 1000+ | 3.37 грн |
| 1500+ | 3.15 грн |
| 3000+ | 2.83 грн |
| 6000+ | 2.57 грн |
| BSS123W |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
Pulsed drain current: 0.68A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
Pulsed drain current: 0.68A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 1060 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 11.48 грн |
| 60+ | 7.22 грн |
| 100+ | 6.31 грн |
| 500+ | 5.74 грн |
| 1N5408G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: bulk
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: bulk
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 1097 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.08 грн |
| 25+ | 16.57 грн |
| 28+ | 14.93 грн |
| 100+ | 10.50 грн |
| 250+ | 9.02 грн |
| 500+ | 8.53 грн |
| MOC3022M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Manufacturer series: MOC302XM
на замовлення 527 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.33 грн |
| 14+ | 30.67 грн |
| 15+ | 28.95 грн |
| 50+ | 24.36 грн |
| 100+ | 22.47 грн |
| 500+ | 21.57 грн |
| MC74VHC1G08DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
на замовлення 2825 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 12.01 грн |
| 50+ | 9.76 грн |
| 250+ | 8.28 грн |
| 1000+ | 7.05 грн |
| SBAS16HT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
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| 1N5407G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
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| NRVTSM260EV2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
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| NRVTSM260EV2T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
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| SBC857BDW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 578 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.48 грн |
| 66+ | 6.23 грн |
| 90+ | 4.56 грн |
| 103+ | 3.99 грн |
| 500+ | 2.94 грн |
| 1N4148WT |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD523F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.2A
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD523F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.2A
Capacitance: 4pF
на замовлення 6174 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 93+ | 4.43 грн |
| 127+ | 3.25 грн |
| 250+ | 2.79 грн |
| 500+ | 2.44 грн |
| 1000+ | 2.09 грн |
| 2000+ | 1.75 грн |
| 2500+ | 1.63 грн |
| BAT54XV2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
на замовлення 18251 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.95 грн |
| 81+ | 5.08 грн |
| 114+ | 3.62 грн |
| 131+ | 3.13 грн |
| 500+ | 2.28 грн |
| 1000+ | 2.01 грн |
| 3000+ | 1.72 грн |
| MMSZ5239BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 5927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.95 грн |
| 85+ | 4.84 грн |
| 135+ | 3.04 грн |
| 500+ | 2.26 грн |
| 1000+ | 2.02 грн |
| 3000+ | 1.71 грн |
| FDMS86182 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FXMAR2102UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
на замовлення 4681 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.35 грн |
| 10+ | 56.58 грн |
| 25+ | 54.12 грн |
| 100+ | 48.38 грн |
| BC639 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
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| J310 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
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| SS8550 |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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| TIP41C-TU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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| 2N5401G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
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| BC550CG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
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| LF353N |
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Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
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| SS25 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
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| SS25FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| MC74ACT74DR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 1866 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.96 грн |
| 24+ | 17.22 грн |
| 27+ | 15.34 грн |
| 32+ | 13.12 грн |
| 50+ | 12.38 грн |



































