Продукція > ONSEMI > Всі товари виробника ONSEMI (142631) > Сторінка 2312 з 2378

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Фото Назва Виробник Інформація Доступність
Ціна
MJD2955G MJD2955G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA7FCC5C1860680D6&compId=MJD2955_MJD3055.PDF?ci_sign=a682b3aa15c14fffc0e25edb06800ae419504f3e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: tube
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
6+76.64 грн
7+67.12 грн
25+53.53 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NVF2955T1G NVF2955T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A559C19636745&compId=NTF2955.PDF?ci_sign=dc927e275d4b608d7a185c4a882d7be756922d2b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 710 шт:
термін постачання 21-30 дні (днів)
7+70.54 грн
10+49.33 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJF2955G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB88F6D45E079E0D6&compId=MJF2955_MJF3055.PDF?ci_sign=86e28e21cff2775cce87dd87170b00e46b1d3b73 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 30W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 90V
Frequency: 2MHz
Polarisation: bipolar
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NDUL03N150CG ONSEMI ena2218-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
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MURS360BT3G ONSEMI murs360bt3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 75ns
Max. forward voltage: 1.25V
Load current: 3A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMB
Type of diode: rectifying
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SZ1SMA5929BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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MC14022BDR2G MC14022BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759A40D3&compId=MC14022B-D.pdf?ci_sign=02fcd4be316244aeb248587b93e6ff056d2ef1c1 Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of integrated circuit: counter; octal
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 3
Kind of package: reel; tape
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FDS4685 FDS4685 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC860E2D602259&compId=FDS4685.pdf?ci_sign=a52ff977a58421c38b025f332849ae2108795bfa Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 27nC
на замовлення 756 шт:
термін постачання 21-30 дні (днів)
6+74.02 грн
10+58.22 грн
21+47.71 грн
56+44.48 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NTMD6P02R2G NTMD6P02R2G ONSEMI ntmd6p02r2-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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1N485B ONSEMI 1n485b-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; bulk; Ifsm: 4A; DO35
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Case: DO35
Load current: 0.2A
Max. forward impulse current: 4A
Max. off-state voltage: 200V
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1N485BTR ONSEMI 1n485b-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; reel,tape; Ifsm: 4A; DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Case: DO35
Load current: 0.2A
Max. forward impulse current: 4A
Max. off-state voltage: 200V
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FDLL485B ONSEMI fdll485b-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 180V; 0.5A; SOD80; Ufmax: 1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Case: SOD80
Load current: 0.5A
Max. forward voltage: 1V
Max. off-state voltage: 180V
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FDMS4D0N12C ONSEMI fdms4d0n12c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 114A
Pulsed drain current: 628A
Power dissipation: 106W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14490DWG MC14490DWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A2E0C7&compId=MC14490DWG.pdf?ci_sign=6fd9f526da277f38d4735ade8fd9516e807bd7b2 Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
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MC14490DWR2G MC14490DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA5080D3&compId=MC14490-D.pdf?ci_sign=d91aba627ec276b27faee8429670fa2b38b68d43 Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator; hex
Number of channels: 1
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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KA1M0565RYDTU ONSEMI ka1m0565r-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
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ESD7351XV2T1G ESD7351XV2T1G ONSEMI esd7351-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD523
на замовлення 4135 шт:
термін постачання 21-30 дні (днів)
46+9.58 грн
60+6.79 грн
69+5.90 грн
107+3.81 грн
250+3.32 грн
500+3.30 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
FFPF20UP30DNTU FFPF20UP30DNTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9FE9BC24EC0CE&compId=FFPF20UP30DN.pdf?ci_sign=f69c4e09886b24c7f4ebff82bf22b8cc4930af91 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 45ns
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MC74VHC4066DR2G MC74VHC4066DR2G ONSEMI mc74vhc4066-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Operating temperature: -55...125°C
Quiescent current: 40µA
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MC74VHC4066DTR2G MC74VHC4066DTR2G ONSEMI mc74vhc4066-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Operating temperature: -55...125°C
Quiescent current: 40µA
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2SC5569-TD-E 2SC5569-TD-E ONSEMI en6309-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT89
Power dissipation: 1.3W
Collector current: 7A
Collector-emitter voltage: 50V
Current gain: 560...200
Frequency: 330MHz
на замовлення 788 шт:
термін постачання 21-30 дні (днів)
6+74.02 грн
12+36.63 грн
50+28.71 грн
100+26.04 грн
200+24.26 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NCP163AFCT120T2G ONSEMI ncp163-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP4
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.25A
Input voltage: 2.2...5.5V
Number of channels: 1
Tolerance: ±2%
Output voltage: 1.2V
Manufacturer series: NCP163
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NCP156AAFCT120280T2G ONSEMI ncp156-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP6
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 250...500mA
Input voltage: 0.8...3.6V
Number of channels: 2
Tolerance: ±1%
Output voltage: 1.2V; 2.8V
Manufacturer series: NCP156
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NTA7002NT1G NTA7002NT1G ONSEMI nta7002n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 0.154A
Power dissipation: 0.3W
On-state resistance: 7Ω
Gate-source voltage: ±10V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 4167 шт:
термін постачання 21-30 дні (днів)
34+13.06 грн
54+7.60 грн
70+5.79 грн
100+5.14 грн
500+3.84 грн
1000+3.36 грн
1500+3.11 грн
3000+2.83 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SZESDR0502BT1G ONSEMI esdr0502b-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT416
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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NSVBAS16TT1G ONSEMI BAS16TT1-D.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
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NSVDAN222T1G ONSEMI dan222-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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MC74HCT132ADR2G MC74HCT132ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB4F820&compId=MC74HCT132A-D.pdf?ci_sign=cfe401295726378cdbdeea243847a78088619b15 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HCT
на замовлення 2378 шт:
термін постачання 21-30 дні (днів)
10+47.03 грн
16+26.52 грн
25+22.00 грн
50+19.25 грн
100+17.47 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BZX84C7V5LT1G BZX84C7V5LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
на замовлення 6450 шт:
термін постачання 21-30 дні (днів)
72+6.10 грн
117+3.48 грн
153+2.65 грн
186+2.18 грн
225+1.80 грн
281+1.44 грн
500+1.25 грн
1000+1.11 грн
3000+1.01 грн
Мінімальне замовлення: 72
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SZBZX84C7V5LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C7V5ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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LM317MTG LM317MTG ONSEMI LM317M_NCV317M.PDF Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: LM317M
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 1.2...40V
Tolerance: ±4%
на замовлення 129 шт:
термін постачання 21-30 дні (днів)
12+36.58 грн
17+24.75 грн
25+21.83 грн
50+20.14 грн
100+18.84 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NIS1161MTTAG ONSEMI niv1161-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
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NIV1161MTTAG ONSEMI niv1161-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
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NIV2161MTTAG ONSEMI niv2161-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape
Case: WDFN10
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Semiconductor structure: bidirectional
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MJ15015G MJ15015G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0810110CD6469&compId=MJ15015G.PDF?ci_sign=249405a06c1af1d465f32eb2280f88b76ce96e10 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 6MHz
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NCP551SN30T1G NCP551SN30T1G ONSEMI ncp551-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
16+27.87 грн
23+18.11 грн
25+16.17 грн
100+13.99 грн
250+13.02 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
NCP1271D100R2G ONSEMI ncp1271-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 85÷107kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 85...107kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.1...20V DC
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NCP1271D65R2G ONSEMI ncp1271-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 55÷69kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 55...69kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.1...20V DC
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MJD31CT4G ONSEMI mjd31-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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NJVMJD31CT4G NJVMJD31CT4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999E55828DB8BD820&compId=MJD31_MJD32.pdf?ci_sign=a4f587ef1f40b50a74314f0e1756618c1b232ad1 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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GBPC3506 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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MOC3071M MOC3071M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051120C7&compId=MOC3071M.pdf?ci_sign=2fa07733cb66889c06f4e09abe5c542075e3c329 Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3071M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3071M
на замовлення 1153 шт:
термін постачання 21-30 дні (днів)
7+69.67 грн
13+32.19 грн
50+27.17 грн
100+25.07 грн
500+23.37 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SMF05T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8A9C8B3A4C1E0D3&compId=SMF05.PDF?ci_sign=2bfb3b33d627be2a4d701f6a59281a4080df2532 Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; SC88A; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6...7.2V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
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1N5245BTR 1N5245BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
на замовлення 4180 шт:
термін постачання 21-30 дні (днів)
63+6.97 грн
120+3.40 грн
209+1.94 грн
241+1.68 грн
500+1.41 грн
1000+1.26 грн
2000+1.25 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
FSV12120V ONSEMI fsv12120v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 12A; reel,tape
Max. off-state voltage: 120V
Case: TO277
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Load current: 12A
Max. forward impulse current: 220A
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FDMA420NZ ONSEMI FDMA420NZ-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 44mΩ
Power dissipation: 2.4W
Drain current: 5.7A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
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1N5248BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5244B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5241BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; reel,tape; CASE017AG; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: 1N52xxB
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1N5243B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N52xxB
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1N5243BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; reel,tape; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N52xxB
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1N5244BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5246BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5247BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 17V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5249BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 19V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N4934RLG ONSEMI 1n4933-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
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BCV26 BCV26 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E2E4AC9A8D5EA&compId=BCV26.pdf?ci_sign=5450d1050af4d1174da6859a0c7dfb2b902ad533 Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 40V; 0.5A; 0.25W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
на замовлення 5718 шт:
термін постачання 21-30 дні (днів)
28+15.68 грн
37+11.00 грн
51+8.01 грн
100+6.97 грн
500+5.13 грн
1000+4.54 грн
1500+4.24 грн
3000+3.79 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
FDD8445 FDD8445 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE87F32A0E9E28&compId=FDD8445.pdf?ci_sign=76fd8828378ae233a76887cf525f0e22474174a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 16.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 79W
Drain current: 70A
Case: DPAK
Kind of channel: enhancement
на замовлення 1604 шт:
термін постачання 21-30 дні (днів)
7+65.32 грн
9+50.46 грн
10+48.36 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MOCD213M MOCD213M ONSEMI MOCD213M.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
8+58.35 грн
10+41.81 грн
25+36.55 грн
50+32.75 грн
100+30.00 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MJD2955G pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA7FCC5C1860680D6&compId=MJD2955_MJD3055.PDF?ci_sign=a682b3aa15c14fffc0e25edb06800ae419504f3e
MJD2955G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: tube
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.64 грн
7+67.12 грн
25+53.53 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NVF2955T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A559C19636745&compId=NTF2955.PDF?ci_sign=dc927e275d4b608d7a185c4a882d7be756922d2b
NVF2955T1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 710 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.54 грн
10+49.33 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJF2955G pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB88F6D45E079E0D6&compId=MJF2955_MJF3055.PDF?ci_sign=86e28e21cff2775cce87dd87170b00e46b1d3b73
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 30W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 90V
Frequency: 2MHz
Polarisation: bipolar
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NDUL03N150CG ena2218-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
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MURS360BT3G murs360bt3-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 75ns
Max. forward voltage: 1.25V
Load current: 3A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SMB
Type of diode: rectifying
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SZ1SMA5929BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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MC14022BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759A40D3&compId=MC14022B-D.pdf?ci_sign=02fcd4be316244aeb248587b93e6ff056d2ef1c1
MC14022BDR2G
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of integrated circuit: counter; octal
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 3
Kind of package: reel; tape
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FDS4685 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC860E2D602259&compId=FDS4685.pdf?ci_sign=a52ff977a58421c38b025f332849ae2108795bfa
FDS4685
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 27nC
на замовлення 756 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.02 грн
10+58.22 грн
21+47.71 грн
56+44.48 грн
Мінімальне замовлення: 6
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NTMD6P02R2G ntmd6p02r2-d.pdf
NTMD6P02R2G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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1N485B 1n485b-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; bulk; Ifsm: 4A; DO35
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Case: DO35
Load current: 0.2A
Max. forward impulse current: 4A
Max. off-state voltage: 200V
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1N485BTR 1n485b-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; reel,tape; Ifsm: 4A; DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Case: DO35
Load current: 0.2A
Max. forward impulse current: 4A
Max. off-state voltage: 200V
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FDLL485B fdll485b-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 180V; 0.5A; SOD80; Ufmax: 1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Case: SOD80
Load current: 0.5A
Max. forward voltage: 1V
Max. off-state voltage: 180V
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FDMS4D0N12C fdms4d0n12c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 114A
Pulsed drain current: 628A
Power dissipation: 106W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14490DWG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A2E0C7&compId=MC14490DWG.pdf?ci_sign=6fd9f526da277f38d4735ade8fd9516e807bd7b2
MC14490DWG
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
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MC14490DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA5080D3&compId=MC14490-D.pdf?ci_sign=d91aba627ec276b27faee8429670fa2b38b68d43
MC14490DWR2G
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator; hex
Number of channels: 1
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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KA1M0565RYDTU ka1m0565r-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
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ESD7351XV2T1G esd7351-d.pdf
ESD7351XV2T1G
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD523
на замовлення 4135 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.58 грн
60+6.79 грн
69+5.90 грн
107+3.81 грн
250+3.32 грн
500+3.30 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
FFPF20UP30DNTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9FE9BC24EC0CE&compId=FFPF20UP30DN.pdf?ci_sign=f69c4e09886b24c7f4ebff82bf22b8cc4930af91
FFPF20UP30DNTU
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 45ns
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MC74VHC4066DR2G mc74vhc4066-d.pdf
MC74VHC4066DR2G
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Operating temperature: -55...125°C
Quiescent current: 40µA
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MC74VHC4066DTR2G mc74vhc4066-d.pdf
MC74VHC4066DTR2G
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Operating temperature: -55...125°C
Quiescent current: 40µA
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2SC5569-TD-E en6309-d.pdf
2SC5569-TD-E
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT89
Power dissipation: 1.3W
Collector current: 7A
Collector-emitter voltage: 50V
Current gain: 560...200
Frequency: 330MHz
на замовлення 788 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.02 грн
12+36.63 грн
50+28.71 грн
100+26.04 грн
200+24.26 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NCP163AFCT120T2G ncp163-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP4
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.25A
Input voltage: 2.2...5.5V
Number of channels: 1
Tolerance: ±2%
Output voltage: 1.2V
Manufacturer series: NCP163
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NCP156AAFCT120280T2G ncp156-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP6
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 250...500mA
Input voltage: 0.8...3.6V
Number of channels: 2
Tolerance: ±1%
Output voltage: 1.2V; 2.8V
Manufacturer series: NCP156
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NTA7002NT1G nta7002n-d.pdf
NTA7002NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 0.154A
Power dissipation: 0.3W
On-state resistance: 7Ω
Gate-source voltage: ±10V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 4167 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+13.06 грн
54+7.60 грн
70+5.79 грн
100+5.14 грн
500+3.84 грн
1000+3.36 грн
1500+3.11 грн
3000+2.83 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SZESDR0502BT1G esdr0502b-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT416
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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NSVBAS16TT1G BAS16TT1-D.PDF
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
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NSVDAN222T1G dan222-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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MC74HCT132ADR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB4F820&compId=MC74HCT132A-D.pdf?ci_sign=cfe401295726378cdbdeea243847a78088619b15
MC74HCT132ADR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HCT
на замовлення 2378 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+47.03 грн
16+26.52 грн
25+22.00 грн
50+19.25 грн
100+17.47 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BZX84C7V5LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C7V5LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
на замовлення 6450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.10 грн
117+3.48 грн
153+2.65 грн
186+2.18 грн
225+1.80 грн
281+1.44 грн
500+1.25 грн
1000+1.11 грн
3000+1.01 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
SZBZX84C7V5LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C7V5ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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LM317MTG LM317M_NCV317M.PDF
LM317MTG
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: LM317M
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 1.2...40V
Tolerance: ±4%
на замовлення 129 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.58 грн
17+24.75 грн
25+21.83 грн
50+20.14 грн
100+18.84 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NIS1161MTTAG niv1161-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
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NIV1161MTTAG niv1161-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
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NIV2161MTTAG niv2161-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape
Case: WDFN10
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Semiconductor structure: bidirectional
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MJ15015G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0810110CD6469&compId=MJ15015G.PDF?ci_sign=249405a06c1af1d465f32eb2280f88b76ce96e10
MJ15015G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 15A
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 6MHz
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NCP551SN30T1G ncp551-d.pdf
NCP551SN30T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.87 грн
23+18.11 грн
25+16.17 грн
100+13.99 грн
250+13.02 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
NCP1271D100R2G ncp1271-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 85÷107kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 85...107kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.1...20V DC
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NCP1271D65R2G ncp1271-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -800÷500mA; 55÷69kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -800...500mA
Frequency: 55...69kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.1...20V DC
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MJD31CT4G mjd31-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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NJVMJD31CT4G pVersion=0046&contRep=ZT&docId=005056AB82531ED999E55828DB8BD820&compId=MJD31_MJD32.pdf?ci_sign=a4f587ef1f40b50a74314f0e1756618c1b232ad1
NJVMJD31CT4G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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GBPC3506 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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MOC3071M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051120C7&compId=MOC3071M.pdf?ci_sign=2fa07733cb66889c06f4e09abe5c542075e3c329
MOC3071M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3071M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3071M
на замовлення 1153 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+69.67 грн
13+32.19 грн
50+27.17 грн
100+25.07 грн
500+23.37 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SMF05T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA8A9C8B3A4C1E0D3&compId=SMF05.PDF?ci_sign=2bfb3b33d627be2a4d701f6a59281a4080df2532
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; SC88A; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6...7.2V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
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1N5245BTR 1N52xxB.PDF
1N5245BTR
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
на замовлення 4180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.97 грн
120+3.40 грн
209+1.94 грн
241+1.68 грн
500+1.41 грн
1000+1.26 грн
2000+1.25 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
FSV12120V fsv12120v-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 12A; reel,tape
Max. off-state voltage: 120V
Case: TO277
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Load current: 12A
Max. forward impulse current: 220A
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FDMA420NZ FDMA420NZ-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 44mΩ
Power dissipation: 2.4W
Drain current: 5.7A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
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1N5248BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5244B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5241BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; reel,tape; CASE017AG; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: 1N52xxB
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1N5243B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N52xxB
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1N5243BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; reel,tape; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N52xxB
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1N5244BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5246BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5247BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 17V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N5249BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 19V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
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1N4934RLG 1n4933-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
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BCV26 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E2E4AC9A8D5EA&compId=BCV26.pdf?ci_sign=5450d1050af4d1174da6859a0c7dfb2b902ad533
BCV26
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 40V; 0.5A; 0.25W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
на замовлення 5718 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.68 грн
37+11.00 грн
51+8.01 грн
100+6.97 грн
500+5.13 грн
1000+4.54 грн
1500+4.24 грн
3000+3.79 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
FDD8445 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE87F32A0E9E28&compId=FDD8445.pdf?ci_sign=76fd8828378ae233a76887cf525f0e22474174a1
FDD8445
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 16.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 79W
Drain current: 70A
Case: DPAK
Kind of channel: enhancement
на замовлення 1604 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.32 грн
9+50.46 грн
10+48.36 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MOCD213M MOCD213M.pdf
MOCD213M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+58.35 грн
10+41.81 грн
25+36.55 грн
50+32.75 грн
100+30.00 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
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