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1N5375BRLG 1N5375BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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MC74HC377ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BC4697D40D3&compId=MC74HC377A-D.pdf?ci_sign=146271d0ee93da0bec50375ad289faee64499db3 Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HC
Technology: CMOS
Manufacturer series: HC
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1N5374BG 1N5374BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: bulk
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
14+31.62 грн
17+23.57 грн
74+12.70 грн
203+11.98 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MMDL301T1G MMDL301T1G ONSEMI mmdl301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1.5pF
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MMDL101T1G ONSEMI mmdl101t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 7V; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1pF
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MMSZ5252BT1G MMSZ5252BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2674 шт:
термін постачання 21-30 дні (днів)
72+5.98 грн
99+4.05 грн
137+2.90 грн
160+2.49 грн
200+2.13 грн
500+1.73 грн
1000+1.60 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
NXH450N65L4Q2F2S1G ONSEMI nxh450n65l4q2f2s1g-d.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
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MC78M15CDTG MC78M15CDTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE98EE6E6112676B8BF&compId=mc78m_ser.pdf?ci_sign=9235bb7dbe91679cd33a93c8dc91f95b564b91c6 description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
на замовлення 303 шт:
термін постачання 21-30 дні (днів)
23+18.80 грн
27+15.00 грн
30+13.33 грн
75+11.59 грн
150+10.79 грн
300+10.40 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
MC78M15CTG MC78M15CTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE98EE6E6112676B8BF&compId=mc78m_ser.pdf?ci_sign=9235bb7dbe91679cd33a93c8dc91f95b564b91c6 Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
11+39.31 грн
16+26.11 грн
25+23.81 грн
50+22.30 грн
100+20.95 грн
250+19.44 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MC74ACT05DG MC74ACT05DG ONSEMI mc74ac05-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: ACT
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MC74ACT05DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62916AC9660D3&compId=MC74AC05-D.pdf?ci_sign=bf25a596224f5ddb4afcb6c722555cd2fa4dee5d Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; TTL; SMD; SOIC14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: SOIC14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: ACT
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MC74ACT05DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62916AC97A0D3&compId=MC74AC05-D.pdf?ci_sign=0bf69cece2d15fe6425a8a0214835e70a1c20b10 Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; TTL; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: ACT
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US1DFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Case: SOD123F
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 200V
Kind of package: reel; tape
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NRVUS1DFA NRVUS1DFA ONSEMI US1MFA-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Case: SOD123F
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
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MMSZ9V1T1G MMSZ9V1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f description Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
39+11.11 грн
53+7.62 грн
62+6.43 грн
108+3.71 грн
382+2.44 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MMSZ3V6T1G MMSZ3V6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 2787 шт:
термін постачання 21-30 дні (днів)
50+8.55 грн
65+6.19 грн
77+5.16 грн
118+3.38 грн
138+2.88 грн
407+2.29 грн
500+2.17 грн
1000+2.09 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NUF2101MT1G ONSEMI nuf2101m-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Type of diode: TVS array
Case: TSOP6
Mounting: SMD
Semiconductor structure: bidirectional
Kind of package: reel; tape
Application: USB
Number of channels: 3
на замовлення 2180 шт:
термін постачання 21-30 дні (днів)
14+31.62 грн
17+24.28 грн
25+22.06 грн
50+20.48 грн
100+19.05 грн
250+18.01 грн
Мінімальне замовлення: 14
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FSUSB104UMX ONSEMI fsusb104-d.pdf FAIR-S-A0001409483-1.pdf?t.download=true&u=5oefqw Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.4VDC; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 3...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
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FSUSB11MTCX FSUSB11MTCX ONSEMI fsusb11-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; TSSOP14; 1.65÷5.5VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 1µA
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NRVA4004T3G NRVA4004T3G ONSEMI mra4003t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Load current: 1A
Max. forward impulse current: 30A
Max. forward voltage: 1.18V
Max. load current: 2A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: single diode
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MC74HCT86ADR2G MC74HCT86ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B58CA12CF820&compId=MC74HCT86A-D.pdf?ci_sign=a02063b2714369573804418297576f8c3d493c32 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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MC74HCT86ADTR2G MC74HCT86ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B58CA12CF820&compId=MC74HCT86A-D.pdf?ci_sign=a02063b2714369573804418297576f8c3d493c32 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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NTMFS5C673NLT1G NTMFS5C673NLT1G ONSEMI ntmfs5c673nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDP33N25 FDP33N25 ONSEMI fdp33n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20.4A; Idm: 132A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20.4A
Pulsed drain current: 132A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
4+141.87 грн
10+111.90 грн
11+91.26 грн
29+85.71 грн
Мінімальне замовлення: 4
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BZX79C4V7 BZX79C4V7 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX79C
на замовлення 1384 шт:
термін постачання 21-30 дні (днів)
46+9.40 грн
61+6.51 грн
94+4.25 грн
113+3.54 грн
250+2.86 грн
428+2.18 грн
1177+2.06 грн
Мінімальне замовлення: 46
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FDD770N15A FDD770N15A ONSEMI fdd770n15a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+427.33 грн
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MSR1560G ONSEMI msr1560-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 45ns
Case: TO220AC
Reverse recovery time: 45ns
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Type of diode: rectifying
Mounting: THT
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KA1H0165RTU ONSEMI ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw KA1H0165R%28N%29.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
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LM358M LM358M ONSEMI pVersion=0046&contRep=ZT&docId=E20E0F46CB108DF1A303005056AB0C4F&compId=LM358A.pdf?ci_sign=98367459edae4eac47e374c413445e189e6ad7b3 Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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SZNSP2201MR6T1G ONSEMI nsp2201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
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SZNSP4201MR6T1G ONSEMI nsp4201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
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GBU4K GBU4K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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MM3Z15VST1G MM3Z15VST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 1214 шт:
термін постачання 21-30 дні (днів)
61+7.08 грн
90+4.44 грн
112+3.57 грн
234+1.70 грн
288+1.38 грн
315+1.26 грн
Мінімальне замовлення: 61
В кошику  од. на суму  грн.
MM3Z15VC MM3Z15VC ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Leakage current: 45nA
на замовлення 2985 шт:
термін постачання 21-30 дні (днів)
59+7.31 грн
107+3.73 грн
111+3.60 грн
135+2.94 грн
365+2.56 грн
500+2.38 грн
1000+2.33 грн
1004+2.32 грн
Мінімальне замовлення: 59
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LM2596DSADJR4G ONSEMI lm2596-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
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LM2596TVADJG ONSEMI lm2596-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Case: TO220-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: tube
Mounting: THT
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LM2904ADMR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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MJ2955G ONSEMI 2n3055-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
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MJD2955T4G ONSEMI mjd2955-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
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MJE2955TG ONSEMI mje2955t-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of transistor: PNP
Power dissipation: 125W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
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SVD2955T4G ONSEMI ntd2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
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SS8550CTA SS8550CTA ONSEMI ss8550-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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NGTB40N120FL2WG ONSEMI ngtb40n120fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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NTHL040N120M3S ONSEMI nthl040n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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NVBG040N120M3S ONSEMI NVBG040N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVBG040N120SC1 ONSEMI nvbg040n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVHL040N120SC1 ONSEMI nvhl040n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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LM358EDR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
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LM358DMR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
Number of channels: dual
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MMBT3906TT1G ONSEMI mmbt3906tt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NSVMMBT3906TT1G ONSEMI mmbt3906tt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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LM339DTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM339EDR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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FCP380N60 ONSEMI fcpf380n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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FCP380N60E ONSEMI FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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FCPF380N60 ONSEMI fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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FCPF380N60E ONSEMI FCPF380N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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NGTB15N120FL2WG ONSEMI ngtb15n120fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
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NGTB25N120FL3WG ONSEMI ngtb25n120fl3w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 136nC
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Case: TO247-3
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NSVBC817-40WT1G ONSEMI bc817-40w-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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1N5375BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5375BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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MC74HC377ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BC4697D40D3&compId=MC74HC377A-D.pdf?ci_sign=146271d0ee93da0bec50375ad289faee64499db3
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HC
Technology: CMOS
Manufacturer series: HC
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1N5374BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5374BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: bulk
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.62 грн
17+23.57 грн
74+12.70 грн
203+11.98 грн
Мінімальне замовлення: 14
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MMDL301T1G mmdl301t1-d.pdf
MMDL301T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1.5pF
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MMDL101T1G mmdl101t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 7V; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1pF
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MMSZ5252BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5252BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2674 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+5.98 грн
99+4.05 грн
137+2.90 грн
160+2.49 грн
200+2.13 грн
500+1.73 грн
1000+1.60 грн
Мінімальне замовлення: 72
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NXH450N65L4Q2F2S1G nxh450n65l4q2f2s1g-d.pdf
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
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MC78M15CDTG description pVersion=0046&contRep=ZT&docId=005056AB82531EE98EE6E6112676B8BF&compId=mc78m_ser.pdf?ci_sign=9235bb7dbe91679cd33a93c8dc91f95b564b91c6
MC78M15CDTG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
на замовлення 303 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.80 грн
27+15.00 грн
30+13.33 грн
75+11.59 грн
150+10.79 грн
300+10.40 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
MC78M15CTG pVersion=0046&contRep=ZT&docId=005056AB82531EE98EE6E6112676B8BF&compId=mc78m_ser.pdf?ci_sign=9235bb7dbe91679cd33a93c8dc91f95b564b91c6
MC78M15CTG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.31 грн
16+26.11 грн
25+23.81 грн
50+22.30 грн
100+20.95 грн
250+19.44 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MC74ACT05DG mc74ac05-d.pdf
MC74ACT05DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: ACT
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MC74ACT05DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62916AC9660D3&compId=MC74AC05-D.pdf?ci_sign=bf25a596224f5ddb4afcb6c722555cd2fa4dee5d
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; TTL; SMD; SOIC14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: SOIC14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: ACT
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MC74ACT05DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62916AC97A0D3&compId=MC74AC05-D.pdf?ci_sign=0bf69cece2d15fe6425a8a0214835e70a1c20b10
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; TTL; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: ACT
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US1DFA us1mfa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Case: SOD123F
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 200V
Kind of package: reel; tape
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NRVUS1DFA US1MFA-D.PDF
NRVUS1DFA
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Case: SOD123F
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
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MMSZ9V1T1G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ9V1T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.11 грн
53+7.62 грн
62+6.43 грн
108+3.71 грн
382+2.44 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MMSZ3V6T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ3V6T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 2787 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.55 грн
65+6.19 грн
77+5.16 грн
118+3.38 грн
138+2.88 грн
407+2.29 грн
500+2.17 грн
1000+2.09 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NUF2101MT1G nuf2101m-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Type of diode: TVS array
Case: TSOP6
Mounting: SMD
Semiconductor structure: bidirectional
Kind of package: reel; tape
Application: USB
Number of channels: 3
на замовлення 2180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.62 грн
17+24.28 грн
25+22.06 грн
50+20.48 грн
100+19.05 грн
250+18.01 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
FSUSB104UMX fsusb104-d.pdf FAIR-S-A0001409483-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.4VDC; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 3...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
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FSUSB11MTCX fsusb11-d.pdf
FSUSB11MTCX
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; TSSOP14; 1.65÷5.5VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 1µA
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NRVA4004T3G mra4003t3-d.pdf
NRVA4004T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Load current: 1A
Max. forward impulse current: 30A
Max. forward voltage: 1.18V
Max. load current: 2A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: single diode
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MC74HCT86ADR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B58CA12CF820&compId=MC74HCT86A-D.pdf?ci_sign=a02063b2714369573804418297576f8c3d493c32
MC74HCT86ADR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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MC74HCT86ADTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B58CA12CF820&compId=MC74HCT86A-D.pdf?ci_sign=a02063b2714369573804418297576f8c3d493c32
MC74HCT86ADTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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NTMFS5C673NLT1G ntmfs5c673nl-d.pdf
NTMFS5C673NLT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDP33N25 fdp33n25-d.pdf
FDP33N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20.4A; Idm: 132A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20.4A
Pulsed drain current: 132A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+141.87 грн
10+111.90 грн
11+91.26 грн
29+85.71 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BZX79C4V7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
BZX79C4V7
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX79C
на замовлення 1384 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.40 грн
61+6.51 грн
94+4.25 грн
113+3.54 грн
250+2.86 грн
428+2.18 грн
1177+2.06 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
FDD770N15A fdd770n15a-d.pdf
FDD770N15A
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.33 грн
В кошику  од. на суму  грн.
MSR1560G msr1560-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 45ns
Case: TO220AC
Reverse recovery time: 45ns
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Type of diode: rectifying
Mounting: THT
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KA1H0165RTU ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw KA1H0165R%28N%29.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
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LM358M pVersion=0046&contRep=ZT&docId=E20E0F46CB108DF1A303005056AB0C4F&compId=LM358A.pdf?ci_sign=98367459edae4eac47e374c413445e189e6ad7b3
LM358M
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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SZNSP2201MR6T1G nsp2201mr6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
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SZNSP4201MR6T1G nsp4201mr6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
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GBU4K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4K
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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MM3Z15VST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z15VST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 1214 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
61+7.08 грн
90+4.44 грн
112+3.57 грн
234+1.70 грн
288+1.38 грн
315+1.26 грн
Мінімальне замовлення: 61
В кошику  од. на суму  грн.
MM3Z15VC pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f
MM3Z15VC
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Leakage current: 45nA
на замовлення 2985 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
59+7.31 грн
107+3.73 грн
111+3.60 грн
135+2.94 грн
365+2.56 грн
500+2.38 грн
1000+2.33 грн
1004+2.32 грн
Мінімальне замовлення: 59
В кошику  од. на суму  грн.
LM2596DSADJR4G lm2596-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
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LM2596TVADJG lm2596-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Case: TO220-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: tube
Mounting: THT
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LM2904ADMR2G lm358-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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MJ2955G 2n3055-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
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MJD2955T4G mjd2955-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
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MJE2955TG mje2955t-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of transistor: PNP
Power dissipation: 125W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
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SVD2955T4G ntd2955-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
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SS8550CTA ss8550-d.pdf
SS8550CTA
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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NGTB40N120FL2WG ngtb40n120fl2w-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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NTHL040N120M3S nthl040n120m3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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NVBG040N120M3S NVBG040N120M3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVHL040N120SC1 nvhl040n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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LM358EDR2G lm358-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
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LM358DMR2G description lm358-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
Number of channels: dual
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MMBT3906TT1G mmbt3906tt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NSVMMBT3906TT1G mmbt3906tt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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LM339DTBR2G lm339-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM339EDR2G lm339-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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FCP380N60 fcpf380n60-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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FCP380N60E FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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FCPF380N60 fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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FCPF380N60E FCPF380N60E-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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NGTB15N120FL2WG ngtb15n120fl2w-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
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NGTB25N120FL3WG ngtb25n120fl3w-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 136nC
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Case: TO247-3
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NSVBC817-40WT1G bc817-40w-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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