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NUP4114UPXV6T2G ONSEMI nup4114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Semiconductor structure: unidirectional
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NUP4114UPXV6T1G ONSEMI nup4114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Semiconductor structure: unidirectional
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SZNUP4114HMR6T1G ONSEMI nup4114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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SZNUP4114UCLW1T2G ONSEMI nup4114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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FQD10N20CTM FQD10N20CTM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197461A92B30259&compId=FQD10N20C.pdf?ci_sign=c62d5bc9c879fb19f5c2d4ab2f91ba800650fb68 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74AC125DG MC74AC125DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9E657DE48611C&compId=MC74AC125DG.PDF?ci_sign=50271f4ef84070ad23ca2d385b7dcc6365ca0714 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 80µA
Kind of package: tube
Kind of output: 3-state
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
12+38.32 грн
17+25.15 грн
25+22.89 грн
55+21.19 грн
110+19.89 грн
Мінімальне замовлення: 12
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MC74AC125DTR2G MC74AC125DTR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
на замовлення 731 шт:
термін постачання 21-30 дні (днів)
13+34.84 грн
17+25.23 грн
25+22.16 грн
100+18.11 грн
250+17.71 грн
Мінімальне замовлення: 13
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MC74AC245DTG MC74AC245DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C560D3&compId=MC74AC245-D.pdf?ci_sign=267d55e22d868668c229e33385eebf43ec7b025c Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Kind of output: 3-state
на замовлення 425 шт:
термін постачання 21-30 дні (днів)
6+80.99 грн
10+46.34 грн
25+38.17 грн
75+33.24 грн
Мінімальне замовлення: 6
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BAT54T1G BAT54T1G ONSEMI bat54t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
на замовлення 3361 шт:
термін постачання 21-30 дні (днів)
84+5.23 грн
125+3.23 грн
191+2.13 грн
250+1.84 грн
500+1.65 грн
1000+1.50 грн
3000+1.31 грн
Мінімальне замовлення: 84
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SZESD5B5.0ST1G ONSEMI esd5b5.0st1-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FMBA14 FMBA14 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD04ABBD1798469&compId=FMBA14.pdf?ci_sign=80d8a07fb7315c6395d47373401cde7e8c4ffdff Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 1.2A
Power dissipation: 0.7W
Collector-emitter voltage: 30V
Frequency: 1.25MHz
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 1423 шт:
термін постачання 21-30 дні (днів)
120+3.38 грн
Мінімальне замовлення: 120
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MC74ACT125DR2G MC74ACT125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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MMSZ4V7T1G MMSZ4V7T1G ONSEMI MMSZxxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 2020 шт:
термін постачання 21-30 дні (днів)
72+6.10 грн
100+4.04 грн
137+2.96 грн
159+2.55 грн
500+1.78 грн
1000+1.52 грн
1500+1.38 грн
Мінімальне замовлення: 72
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FDN306P FDN306P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E4B33FE5D35EA&compId=FDN306P.pdf?ci_sign=26eedbb7a4dcd74ee32ee68829452848d1ab9f85 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 3944 шт:
термін постачання 21-30 дні (днів)
16+28.74 грн
22+18.68 грн
50+13.99 грн
100+12.21 грн
250+10.27 грн
500+9.30 грн
1000+9.14 грн
Мінімальне замовлення: 16
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MBRS130LT3G MBRS130LT3G ONSEMI mbrs130.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
на замовлення 2713 шт:
термін постачання 21-30 дні (днів)
21+20.90 грн
31+13.34 грн
50+10.51 грн
100+9.38 грн
250+8.09 грн
500+7.28 грн
1000+6.87 грн
Мінімальне замовлення: 21
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FDV303N FDV303N ONSEMI pVersion=0046&contRep=ZT&docId=E20E08AD993A0FF1A303005056AB0C4F&compId=FDV303N.pdf?ci_sign=88cc801a301a7bf4624e67f601d940e550f21f85 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 14176 шт:
термін постачання 21-30 дні (днів)
34+13.06 грн
48+8.57 грн
68+6.03 грн
100+5.19 грн
500+3.85 грн
1000+3.47 грн
1500+3.30 грн
3000+3.06 грн
6000+2.87 грн
Мінімальне замовлення: 34
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US1GFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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NRVUS1GFA NRVUS1GFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 30A
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6N139SM 6N139SM ONSEMI 6N139SM-FAI.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
на замовлення 630 шт:
термін постачання 21-30 дні (днів)
7+72.28 грн
10+48.36 грн
50+42.70 грн
100+41.24 грн
500+37.04 грн
Мінімальне замовлення: 7
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FDBL0150N60 ONSEMI fdbl0150n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCD7N60TM-WS ONSEMI fcd7n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCI7N60 ONSEMI fci7n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
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FCH47N60F-F133
+1
 		FCH47N60F-F133 ONSEMI fch47n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+803.82 грн
10+660.69 грн
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FDC3612 FDC3612 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A58EB56DCDB260E2&compId=FDC3612.PDF?ci_sign=79261df772af88d070e7d6c2633dc7f42384222f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2982 шт:
термін постачання 21-30 дні (днів)
13+33.96 грн
15+28.47 грн
50+23.61 грн
100+21.43 грн
250+19.00 грн
Мінімальне замовлення: 13
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CAT25256XI-T2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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FDBL0240N100 ONSEMI fdbl0240n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
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NCV3843BVD1R2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
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NCV3843BVDR2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
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FDD8444 ONSEMI fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 89nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
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FDB0260N1007L ONSEMI fdb0260n1007l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
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FDBL0260N100 ONSEMI fdbl0260n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
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FCMT199N60 ONSEMI fcmt199n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCD620N60ZF ONSEMI fcd620n60zf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
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NDB5060L ONSEMI ndb5060l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
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MC14025BDG MC14025BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Delay time: 130ns
Number of inputs: 3
Kind of gate: NOR
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
15+29.61 грн
17+24.34 грн
25+21.92 грн
55+20.70 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
FCA20N60-F109 ONSEMI fca20n60_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
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FCMT360N65S3 ONSEMI fcmt360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: PQFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
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FDD5N50NZTM ONSEMI fdd5n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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J176-D74Z J176-D74Z ONSEMI j175-d.pdf Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
на замовлення 1797 шт:
термін постачання 21-30 дні (днів)
18+25.26 грн
24+17.47 грн
100+14.64 грн
250+11.24 грн
500+8.98 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
TIP42AG TIP42AG ONSEMI tip41a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
5+100.15 грн
10+76.26 грн
50+50.14 грн
100+40.60 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FCD5N60TM-WS ONSEMI fcu5n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDBL0110N60 ONSEMI fdbl0110n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
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BC858CLT1G BC858CLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2065 шт:
термін постачання 21-30 дні (днів)
63+6.97 грн
85+4.77 грн
122+3.32 грн
145+2.81 грн
500+1.92 грн
1000+1.67 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BC858BLT3G BC858BLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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FDBL0210N80 ONSEMI fdbl0210n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
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NTBG040N120M3S ONSEMI NTBG040N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NCV33035DWR2G ONSEMI mc33035-d.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 75mA; Ch: 3
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Topology: H-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Output current: 75mA
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
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FDD18N20LZ ONSEMI fdd18n20lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
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NSR05F20NXT5G ONSEMI nsr05f20-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 20V
Case: 0402
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74AC245MTC 74AC245MTC ONSEMI 74ACT245-D.pdf description Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
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74AC245MTCX 74AC245MTCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
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74AC245SCX 74AC245SCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS; TTL
Case: SO20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
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MC74AC245DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C6A0D3&compId=MC74AC245-D.pdf?ci_sign=c7ddd3b6a12d60351565f9ffe180d90e92f3fd47 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Manufacturer series: AC
Family: AC
Technology: CMOS
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Kind of output: 3-state
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SI4435DY SI4435DY ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDF97877B8745&compId=SI4435DY.pdf?ci_sign=2dd861dc7908fb1b7a5ceb72263e5d2fccba210c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1682 шт:
термін постачання 21-30 дні (днів)
5+91.44 грн
8+56.28 грн
50+43.02 грн
100+39.63 грн
500+37.20 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NTD2955T4G NTD2955T4G ONSEMI ntd2955-d.pdf 546ddeaeab93c794f84a448873c3157d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 1667 шт:
термін постачання 21-30 дні (днів)
6+86.22 грн
10+54.75 грн
25+48.60 грн
100+40.92 грн
250+36.71 грн
500+33.80 грн
1000+31.21 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MMBF5484 MMBF5484 ONSEMI mmbf5486-d.pdf FAIRS30486-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 2872 шт:
термін постачання 21-30 дні (днів)
46+9.58 грн
51+8.01 грн
100+7.44 грн
250+7.12 грн
500+6.39 грн
1000+6.07 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
MCH3914-7-TL-H ONSEMI ena1511-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
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MCH3914-8-TL-H ONSEMI ena1511-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
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IRFM120ATF ONSEMI irfm120a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
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NUP4114UPXV6T2G nup4114-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Semiconductor structure: unidirectional
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NUP4114UPXV6T1G nup4114-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Semiconductor structure: unidirectional
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SZNUP4114HMR6T1G nup4114-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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SZNUP4114UCLW1T2G nup4114-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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FQD10N20CTM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197461A92B30259&compId=FQD10N20C.pdf?ci_sign=c62d5bc9c879fb19f5c2d4ab2f91ba800650fb68
FQD10N20CTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74AC125DG pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9E657DE48611C&compId=MC74AC125DG.PDF?ci_sign=50271f4ef84070ad23ca2d385b7dcc6365ca0714
MC74AC125DG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 80µA
Kind of package: tube
Kind of output: 3-state
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+38.32 грн
17+25.15 грн
25+22.89 грн
55+21.19 грн
110+19.89 грн
Мінімальне замовлення: 12
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MC74AC125DTR2G mc74ac125-d.pdf
MC74AC125DTR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
на замовлення 731 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.84 грн
17+25.23 грн
25+22.16 грн
100+18.11 грн
250+17.71 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC74AC245DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C560D3&compId=MC74AC245-D.pdf?ci_sign=267d55e22d868668c229e33385eebf43ec7b025c
MC74AC245DTG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Kind of output: 3-state
на замовлення 425 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+80.99 грн
10+46.34 грн
25+38.17 грн
75+33.24 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BAT54T1G bat54t1-d.pdf
BAT54T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
на замовлення 3361 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
84+5.23 грн
125+3.23 грн
191+2.13 грн
250+1.84 грн
500+1.65 грн
1000+1.50 грн
3000+1.31 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
SZESD5B5.0ST1G esd5b5.0st1-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FMBA14 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD04ABBD1798469&compId=FMBA14.pdf?ci_sign=80d8a07fb7315c6395d47373401cde7e8c4ffdff
FMBA14
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 1.2A
Power dissipation: 0.7W
Collector-emitter voltage: 30V
Frequency: 1.25MHz
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 1423 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
120+3.38 грн
Мінімальне замовлення: 120
В кошику  од. на суму  грн.
MC74ACT125DR2G mc74ac125-d.pdf
MC74ACT125DR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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MMSZ4V7T1G MMSZxxxT1G.PDF
MMSZ4V7T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 2020 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.10 грн
100+4.04 грн
137+2.96 грн
159+2.55 грн
500+1.78 грн
1000+1.52 грн
1500+1.38 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
FDN306P pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E4B33FE5D35EA&compId=FDN306P.pdf?ci_sign=26eedbb7a4dcd74ee32ee68829452848d1ab9f85
FDN306P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 3944 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.74 грн
22+18.68 грн
50+13.99 грн
100+12.21 грн
250+10.27 грн
500+9.30 грн
1000+9.14 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MBRS130LT3G mbrs130.pdf
MBRS130LT3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
на замовлення 2713 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.90 грн
31+13.34 грн
50+10.51 грн
100+9.38 грн
250+8.09 грн
500+7.28 грн
1000+6.87 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
FDV303N pVersion=0046&contRep=ZT&docId=E20E08AD993A0FF1A303005056AB0C4F&compId=FDV303N.pdf?ci_sign=88cc801a301a7bf4624e67f601d940e550f21f85
FDV303N
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 14176 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+13.06 грн
48+8.57 грн
68+6.03 грн
100+5.19 грн
500+3.85 грн
1000+3.47 грн
1500+3.30 грн
3000+3.06 грн
6000+2.87 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
US1GFA us1mfa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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NRVUS1GFA us1mfa-d.pdf
NRVUS1GFA
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 30A
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6N139SM 6N139SM-FAI.pdf
6N139SM
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
на замовлення 630 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+72.28 грн
10+48.36 грн
50+42.70 грн
100+41.24 грн
500+37.04 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FDBL0150N60 fdbl0150n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCD7N60TM-WS fcd7n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCI7N60 fci7n60-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
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FCH47N60F-F133 fch47n60f-d.pdf
FCH47N60F-F133
+1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+803.82 грн
10+660.69 грн
В кошику  од. на суму  грн.
FDC3612 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A58EB56DCDB260E2&compId=FDC3612.PDF?ci_sign=79261df772af88d070e7d6c2633dc7f42384222f
FDC3612
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2982 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.96 грн
15+28.47 грн
50+23.61 грн
100+21.43 грн
250+19.00 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
CAT25256XI-T2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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FDBL0240N100 fdbl0240n100-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
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NCV3843BVD1R2G ncv3843bv-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
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NCV3843BVDR2G ncv3843bv-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
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FDD8444 fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 89nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
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FDB0260N1007L fdb0260n1007l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
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FDBL0260N100 fdbl0260n100-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
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FCMT199N60 fcmt199n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCD620N60ZF fcd620n60zf-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
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NDB5060L ndb5060l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
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MC14025BDG description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14025BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Delay time: 130ns
Number of inputs: 3
Kind of gate: NOR
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.61 грн
17+24.34 грн
25+21.92 грн
55+20.70 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
FCA20N60-F109 fca20n60_f109-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
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FCMT360N65S3 fcmt360n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: PQFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
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FDD5N50NZTM fdd5n50nz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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J176-D74Z j175-d.pdf
J176-D74Z
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
на замовлення 1797 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.26 грн
24+17.47 грн
100+14.64 грн
250+11.24 грн
500+8.98 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
TIP42AG tip41a-d.pdf
TIP42AG
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+100.15 грн
10+76.26 грн
50+50.14 грн
100+40.60 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FCD5N60TM-WS fcu5n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDBL0110N60 fdbl0110n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
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BC858CLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858CLT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2065 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.97 грн
85+4.77 грн
122+3.32 грн
145+2.81 грн
500+1.92 грн
1000+1.67 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BC858BLT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858BLT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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FDBL0210N80 fdbl0210n80-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
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NTBG040N120M3S NTBG040N120M3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NCV33035DWR2G mc33035-d.pdf
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 75mA; Ch: 3
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Topology: H-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Output current: 75mA
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
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FDD18N20LZ fdd18n20lz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
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NSR05F20NXT5G nsr05f20-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 20V
Case: 0402
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74AC245MTC description 74ACT245-D.pdf
74AC245MTC
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
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74AC245MTCX 74ACT245-D.pdf
74AC245MTCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
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74AC245SCX 74ACT245-D.pdf
74AC245SCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS; TTL
Case: SO20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
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MC74AC245DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C6A0D3&compId=MC74AC245-D.pdf?ci_sign=c7ddd3b6a12d60351565f9ffe180d90e92f3fd47
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Manufacturer series: AC
Family: AC
Technology: CMOS
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Kind of output: 3-state
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SI4435DY pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDF97877B8745&compId=SI4435DY.pdf?ci_sign=2dd861dc7908fb1b7a5ceb72263e5d2fccba210c
SI4435DY
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1682 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.44 грн
8+56.28 грн
50+43.02 грн
100+39.63 грн
500+37.20 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NTD2955T4G ntd2955-d.pdf 546ddeaeab93c794f84a448873c3157d.pdf
NTD2955T4G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 1667 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+86.22 грн
10+54.75 грн
25+48.60 грн
100+40.92 грн
250+36.71 грн
500+33.80 грн
1000+31.21 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MMBF5484 mmbf5486-d.pdf FAIRS30486-1.pdf?t.download=true&u=5oefqw
MMBF5484
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 2872 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.58 грн
51+8.01 грн
100+7.44 грн
250+7.12 грн
500+6.39 грн
1000+6.07 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
MCH3914-7-TL-H ena1511-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
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MCH3914-8-TL-H ena1511-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
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IRFM120ATF irfm120a-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
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