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MUN5315DW1T1G ONSEMI dtc114tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN / PNP
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MUN5311DW1T2G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Type of transistor: NPN / PNP
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MUN5312DW1T2G ONSEMI dtc124ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
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MUN5316DW1T1G MUN5316DW1T1G ONSEMI dtc143tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Type of transistor: NPN / PNP
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SMUN5312DW1T1G SMUN5312DW1T1G ONSEMI dtc124ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5311DW1T2G SMUN5311DW1T2G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5311DW1T3G SMUN5311DW1T3G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5313DW1T1G SMUN5313DW1T1G ONSEMI dtc144ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5313DW1T3G SMUN5313DW1T3G ONSEMI dtc144ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5315DW1T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
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NSVMUN531335DW1T1G ONSEMI mun531335dw1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 2.2/47kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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NSVMUN5312DW1T2G ONSEMI dtc124ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60...100
Base resistor: 22kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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NSVMUN5316DW1T1G ONSEMI dtc143tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
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BZX85C10 BZX85C10 ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
на замовлення 2653 шт:
термін постачання 14-30 дні (днів)
46+9.89 грн
59+7.18 грн
71+5.93 грн
138+3.03 грн
250+2.77 грн
500+2.76 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BZX85C10-T50R ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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FFSB2065B ONSEMI ffsb2065b-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Technology: SiC
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FFSB2065B-F085 ONSEMI ffsb2065b-f085-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Technology: SiC
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FFSB2065BDN-F085 ONSEMI ffsb2065bdn-f085-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.75V
Kind of package: reel; tape
Application: automotive industry
Technology: SiC
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NTH4L040N120SC1 NTH4L040N120SC1 ONSEMI NTH4L040N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
1+1349.13 грн
В кошику  од. на суму  грн.
MMSD4448 MMSD4448 ONSEMI mmsd4448-d.pdf FAIRS23667-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
на замовлення 3658 шт:
термін постачання 14-30 дні (днів)
63+7.20 грн
81+5.18 грн
93+4.51 грн
103+4.09 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
LM2575T-5G LM2575T-5G ONSEMI LM2575-ON-DTE.PDF description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
4+148.40 грн
10+104.40 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LM2575T-ADJG LM2575T-ADJG ONSEMI LM2575-ON-DTE.PDF description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 367 шт:
термін постачання 14-30 дні (днів)
4+119.62 грн
5+102.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LM2575D2T-5G LM2575D2T-5G ONSEMI lm2575-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
4+143.01 грн
10+101.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FQA90N15 FQA90N15 ONSEMI fqa90n15-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
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FQA90N15-F109 FQA90N15-F109 ONSEMI fqa90n15_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
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DF08S DF08S ONSEMI DF04S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
на замовлення 3505 шт:
термін постачання 14-30 дні (днів)
8+60.26 грн
11+40.26 грн
50+27.64 грн
100+23.64 грн
200+20.55 грн
500+18.29 грн
Мінімальне замовлення: 8
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NSV9435T1G ONSEMI nsb9435t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
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DTA123EET1G ONSEMI dta123e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
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DTA123EM3T5G ONSEMI dta123e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
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DTA123JET1G ONSEMI dta123j-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 80...140
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
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FDD5N50NZTM ONSEMI fdd5n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQU5N50CTU-WS ONSEMI FQU5N50CTU_WS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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FDH45N50F-F133 FDH45N50F-F133 ONSEMI fdh45n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 441 шт:
термін постачання 14-30 дні (днів)
1+478.49 грн
5+364.14 грн
10+321.54 грн
30+313.19 грн
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FQPF5N50CYDTU FQPF5N50CYDTU ONSEMI FQP5N50C%2C%20FQPF5N50C.pdf FAIRS27140-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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H11F3M H11F3M ONSEMI H11F3M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
на замовлення 723 шт:
термін постачання 14-30 дні (днів)
2+288.71 грн
25+198.77 грн
50+179.56 грн
100+171.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PCRU3060W ONSEMI Category: Transistors - Unclassified
Description: PCRU3060W
на замовлення 12492 шт:
термін постачання 14-30 дні (днів)
3+187.98 грн
Мінімальне замовлення: 3
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LM2574N-5G LM2574N-5G ONSEMI LM2574.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 879 шт:
термін постачання 14-30 дні (днів)
5+111.53 грн
10+76.00 грн
50+65.98 грн
100+62.64 грн
250+58.46 грн
500+57.63 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
LM2574N-ADJG LM2574N-ADJG ONSEMI LM2574.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
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LM2574N-12G ONSEMI LM2574.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
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BD137G BD137G ONSEMI BD137.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
на замовлення 999 шт:
термін постачання 14-30 дні (днів)
7+73.75 грн
13+34.08 грн
100+24.55 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BZX79C5V6 BZX79C5V6 ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
на замовлення 764 шт:
термін постачання 14-30 дні (днів)
56+8.09 грн
95+4.43 грн
159+2.64 грн
194+2.16 грн
250+1.75 грн
500+1.54 грн
Мінімальне замовлення: 56
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NVMFD5C466NLT1G ONSEMI nvmfd5c466nl-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFD5C466NLWFT1G ONSEMI nvmfd5c466nl-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL075N065SC1 NTHL075N065SC1 ONSEMI NTHL075N065SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
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NTH4L075N065SC1 ONSEMI nth4l075n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
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NVBG075N065SC1 ONSEMI nvbg075n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
800+673.66 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NXH040F120MNF1PG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040F120MNF1PTG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040P120MNF1PG ONSEMI nxh040p120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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MMBF5485 MMBF5485 ONSEMI mmbf5486-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -25V
Drain current: 4mA
Gate current: 10mA
Power dissipation: 0.225W
на замовлення 2456 шт:
термін постачання 14-30 дні (днів)
34+13.49 грн
47+9.02 грн
100+8.10 грн
500+7.68 грн
1000+6.85 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
1N5360BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5360BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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KSP55TA KSP55TA ONSEMI ksp55-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50
Mounting: THT
Kind of package: Ammo Pack
Frequency: 105MHz
на замовлення 1980 шт:
термін постачання 14-30 дні (днів)
14+34.18 грн
17+24.64 грн
100+13.95 грн
500+9.35 грн
1000+9.19 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SS35 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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1SS351-TB-E ONSEMI 1ss351-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Kind of package: reel; tape
Case: SC59
Semiconductor structure: double series
Type of diode: Schottky switching
Capacitance: 0.9pF
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NSP4201MR6T1G ONSEMI nsp4201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Application: automotive industry; USB
Type of diode: TVS array
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SZNSP4201MR6T1G ONSEMI nsp4201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
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SZESD5Z3.3T1G ONSEMI esd5z2.5t1-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NRVB560MFST3G ONSEMI mbr560mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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NRVB560MFST1G ONSEMI mbr560mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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MUN5315DW1T1G dtc114tp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN / PNP
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MUN5311DW1T2G dtc114ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Type of transistor: NPN / PNP
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MUN5312DW1T2G dtc124ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
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MUN5316DW1T1G dtc143tp-d.pdf
MUN5316DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Type of transistor: NPN / PNP
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SMUN5312DW1T1G dtc124ep-d.pdf
SMUN5312DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5311DW1T2G dtc114ep-d.pdf
SMUN5311DW1T2G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5311DW1T3G dtc114ep-d.pdf
SMUN5311DW1T3G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5313DW1T1G dtc144ep-d.pdf
SMUN5313DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5313DW1T3G dtc144ep-d.pdf
SMUN5313DW1T3G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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SMUN5315DW1T1G dtc114yp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
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NSVMUN531335DW1T1G mun531335dw1-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 2.2/47kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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NSVMUN5312DW1T2G dtc124ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60...100
Base resistor: 22kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
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NSVMUN5316DW1T1G dtc143tp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
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BZX85C10 BZX85C.PDF
BZX85C10
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
на замовлення 2653 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+9.89 грн
59+7.18 грн
71+5.93 грн
138+3.03 грн
250+2.77 грн
500+2.76 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BZX85C10-T50R BZX85C.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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FFSB2065B ffsb2065b-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Technology: SiC
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FFSB2065B-F085 ffsb2065b-f085-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Technology: SiC
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FFSB2065BDN-F085 ffsb2065bdn-f085-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.75V
Kind of package: reel; tape
Application: automotive industry
Technology: SiC
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NTH4L040N120SC1 NTH4L040N120SC1.PDF
NTH4L040N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1349.13 грн
В кошику  од. на суму  грн.
MMSD4448 mmsd4448-d.pdf FAIRS23667-1.pdf?t.download=true&u=5oefqw
MMSD4448
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
на замовлення 3658 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.20 грн
81+5.18 грн
93+4.51 грн
103+4.09 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
LM2575T-5G description LM2575-ON-DTE.PDF
LM2575T-5G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+148.40 грн
10+104.40 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LM2575T-ADJG description LM2575-ON-DTE.PDF
LM2575T-ADJG
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 367 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+119.62 грн
5+102.73 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LM2575D2T-5G lm2575-d.pdf
LM2575D2T-5G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+143.01 грн
10+101.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FQA90N15 fqa90n15-d.pdf
FQA90N15
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
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FQA90N15-F109 fqa90n15_f109-d.pdf
FQA90N15-F109
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
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DF08S DF04S.pdf
DF08S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
на замовлення 3505 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+60.26 грн
11+40.26 грн
50+27.64 грн
100+23.64 грн
200+20.55 грн
500+18.29 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
NSV9435T1G nsb9435t1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
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DTA123EET1G dta123e-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
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DTA123EM3T5G dta123e-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
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DTA123JET1G dta123j-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 80...140
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
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FDD5N50NZTM fdd5n50nz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQU5N50CTU-WS FQU5N50CTU_WS.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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FDH45N50F-F133 fdh45n50f-d.pdf
FDH45N50F-F133
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 441 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+478.49 грн
5+364.14 грн
10+321.54 грн
30+313.19 грн
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FQPF5N50CYDTU FQP5N50C%2C%20FQPF5N50C.pdf FAIRS27140-1.pdf?t.download=true&u=5oefqw
FQPF5N50CYDTU
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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H11F3M H11F3M.pdf
H11F3M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
на замовлення 723 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+288.71 грн
25+198.77 грн
50+179.56 грн
100+171.21 грн
Мінімальне замовлення: 2
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PCRU3060W
Виробник: ONSEMI
Category: Transistors - Unclassified
Description: PCRU3060W
на замовлення 12492 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+187.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LM2574N-5G description LM2574.pdf
LM2574N-5G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 879 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+111.53 грн
10+76.00 грн
50+65.98 грн
100+62.64 грн
250+58.46 грн
500+57.63 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
LM2574N-ADJG LM2574.pdf
LM2574N-ADJG
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
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LM2574N-12G description LM2574.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
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BD137G BD137.PDF
BD137G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
на замовлення 999 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+73.75 грн
13+34.08 грн
100+24.55 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BZX79C5V6 BZX79C.PDF
BZX79C5V6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
на замовлення 764 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
56+8.09 грн
95+4.43 грн
159+2.64 грн
194+2.16 грн
250+1.75 грн
500+1.54 грн
Мінімальне замовлення: 56
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NVMFD5C466NLT1G nvmfd5c466nl-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFD5C466NLWFT1G nvmfd5c466nl-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTHL075N065SC1 NTHL075N065SC1.PDF
NTHL075N065SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
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NTH4L075N065SC1 nth4l075n065sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
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NVBG075N065SC1 nvbg075n065sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
800+673.66 грн
Мінімальне замовлення: 800
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NXH040F120MNF1PG nxh040f120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040F120MNF1PTG nxh040f120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040P120MNF1PG nxh040p120mnf1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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MMBF5485 mmbf5486-d.pdf
MMBF5485
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -25V
Drain current: 4mA
Gate current: 10mA
Power dissipation: 0.225W
на замовлення 2456 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.49 грн
47+9.02 грн
100+8.10 грн
500+7.68 грн
1000+6.85 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
1N5360BRLG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5360BG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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KSP55TA ksp55-d.pdf
KSP55TA
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50
Mounting: THT
Kind of package: Ammo Pack
Frequency: 105MHz
на замовлення 1980 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.18 грн
17+24.64 грн
100+13.95 грн
500+9.35 грн
1000+9.19 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SS35 SS32_SS39.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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1SS351-TB-E 1ss351-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Kind of package: reel; tape
Case: SC59
Semiconductor structure: double series
Type of diode: Schottky switching
Capacitance: 0.9pF
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NSP4201MR6T1G nsp4201mr6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Application: automotive industry; USB
Type of diode: TVS array
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SZNSP4201MR6T1G nsp4201mr6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
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SZESD5Z3.3T1G esd5z2.5t1-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NRVB560MFST3G mbr560mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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NRVB560MFST1G mbr560mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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