| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MBR30H100MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 30A Semiconductor structure: single diode Case: DFN5x6 Max. forward voltage: 0.9V Max. forward impulse current: 0.3kA Kind of package: reel; tape |
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| MBR30H100CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.8V Max. load current: 30A Max. forward impulse current: 250A Kind of package: tube |
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| 2SK3557-6-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
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В кошику од. на суму грн. | |||||||||||||||||||
| 2SK3557-7-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 16mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
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В кошику од. на суму грн. | |||||||||||||||||||
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MMBZ6V8ALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 6.8V Max. forward impulse current: 2.5A Peak pulse power dissipation: 24W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Leakage current: 0.5µA Version: ESD Kind of package: reel; tape Tolerance: ±5% |
на замовлення 7751 шт: термін постачання 21-30 дні (днів) |
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| SZMMBZ6V8ALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 6.8V Max. forward impulse current: 2.5A Peak pulse power dissipation: 25W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZMMBZ6V8ALT3G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.46V; 2.5A; 24W; unidirectional,common anode Type of diode: TVS array Breakdown voltage: 6.46V Max. forward impulse current: 2.5A Peak pulse power dissipation: 24W Semiconductor structure: common anode; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Leakage current: 0.5µA Number of channels: 2 Application: automotive industry Version: ESD Operating temperature: -55...150°C |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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MMBZ5V6ALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Application: universal Version: ESD Leakage current: 5µA Number of channels: 2 Max. forward impulse current: 3A Max. off-state voltage: 3V Breakdown voltage: 5.6V Peak pulse power dissipation: 24W |
на замовлення 1746 шт: термін постачання 21-30 дні (днів) |
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| FDMS004N08C | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Pulsed drain current: 637A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS015N04B | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS0306AS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 59W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| PCA9306FMUTCG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: uDFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain |
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В кошику од. на суму грн. | |||||||||||||||||||
| PCA9306AMUTCG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: UQFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: auto-direction sensing |
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В кошику од. на суму грн. | |||||||||||||||||||
| PCA9306FMUTAG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: uDFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain |
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В кошику од. на суму грн. | |||||||||||||||||||
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MC74AC08DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: quad; 4 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: tube Technology: CMOS Kind of gate: AND Family: AC Number of inputs: 2 |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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| MC74AC08DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
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В кошику од. на суму грн. | |||||||||||||||||||
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MC74AC08DTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: AC |
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В кошику од. на суму грн. | ||||||||||||||||||
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MC74AC32DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: quad; 4 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: tube Technology: CMOS Kind of gate: OR Family: AC Number of inputs: 2 |
на замовлення 311 шт: термін постачання 21-30 дні (днів) |
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D44VH10G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 83W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 50MHz |
на замовлення 338 шт: термін постачання 21-30 дні (днів) |
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| FDMC8030 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 14W Case: WDFN8 Gate-source voltage: ±12V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| FCB110N65F | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 105A Gate charge: 98nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJF15030G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP Type of transistor: NPN Mounting: THT Collector current: 8A Collector-emitter voltage: 150V Current gain: 40 Power dissipation: 36W Frequency: 30MHz Polarisation: bipolar Kind of package: tube Case: TO220FP |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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MJF15031G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP Type of transistor: PNP Mounting: THT Collector current: 8A Power dissipation: 36W Current gain: 40 Collector-emitter voltage: 150V Frequency: 30MHz Polarisation: bipolar Kind of package: tube Case: TO220FP |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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NTS2101PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -8V Drain current: -1.1A On-state resistance: 0.1Ω Power dissipation: 0.29W Gate-source voltage: ±8V Case: SC70; SOT323 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
на замовлення 3459 шт: термін постачання 21-30 дні (днів) |
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MBT3904DW1T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Kind of package: reel; tape Type of transistor: NPN x2 Case: SC70-6; SC88; SOT363 Collector current: 0.2A Power dissipation: 0.15W Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz Polarisation: bipolar Mounting: SMD |
на замовлення 9500 шт: термін постачання 21-30 дні (днів) |
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| GBPC1202 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 12A Type of bridge rectifier: single-phase Version: square Electrical mounting: THT Max. forward voltage: 1.1V Load current: 12A Max. forward impulse current: 0.3kA Max. off-state voltage: 200V Kind of package: bulk Leads: connectors FASTON Case: GBPC |
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В кошику од. на суму грн. | |||||||||||||||||||
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1N4148-T26A | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: Ammo Pack Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
на замовлення 32955 шт: термін постачання 21-30 дні (днів) |
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ES1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Features of semiconductor devices: fast switching Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Mounting: SMD Capacitance: 10pF Reverse recovery time: 35ns Leakage current: 0.1mA Load current: 1A Max. forward voltage: 1.3V Power dissipation: 1.47W Max. forward impulse current: 30A Max. off-state voltage: 0.4kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CPH3910-TL-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA Case: CPH3 Kind of package: reel; tape Mounting: SMD Type of transistor: N-JFET Polarisation: unipolar Drain current: 20mA Drain-source voltage: 25V Gate-source voltage: -25V Gate current: 10mA Power dissipation: 0.4W |
на замовлення 585 шт: термін постачання 21-30 дні (днів) |
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| MC14518BDWG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC Operating temperature: -55...125°C Type of integrated circuit: digital Mounting: SMD Kind of package: tube Case: SO16WB Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC Kind of integrated circuit: BCD; up counter Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC14518BDWR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC Operating temperature: -55...125°C Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Case: SO16WB Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC Kind of integrated circuit: BCD; up counter Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP511SN50T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,fixed; 5V; 0.15A; TSOP5; SMD; NCP511 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO Voltage drop: 75mV Output voltage: 5V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 5.5...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRS1100T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Semiconductor structure: single diode Kind of package: reel; tape Mounting: SMD Type of diode: Schottky rectifying Max. forward voltage: 0.75V Load current: 1A Max. off-state voltage: 100V Case: SMB |
на замовлення 11255 шт: термін постачання 21-30 дні (днів) |
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1N4736A-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N47xxA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4736ATR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N47xxA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5931BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB Leakage current: 1µA |
на замовлення 1702 шт: термін постачання 21-30 дні (днів) |
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1N5344BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N53xxB |
на замовлення 3212 шт: термін постачання 21-30 дні (днів) |
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1N5344BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N53xxB |
на замовлення 1056 шт: термін постачання 21-30 дні (днів) |
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| NCP45525IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Kind of package: reel; tape Kind of output: N-Channel On-state resistance: 31.7mΩ Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Output current: 6A Type of integrated circuit: power switch Case: DFN8 Active logical level: high Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP45525IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Kind of package: reel; tape Kind of output: N-Channel On-state resistance: 31.7mΩ Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Output current: 6A Type of integrated circuit: power switch Case: DFN8 Active logical level: low Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74ACT132DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74ACT132DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: ACT |
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В кошику од. на суму грн. | ||||||||||||||||||
| NCP1337DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 130kHz Mounting: SMD Case: SO7 Number of channels: 1 Operating temperature: 0...125°C Operating voltage: 9...18.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM3Z15VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 4160 шт: термін постачання 21-30 дні (днів) |
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BC847BM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.26W Case: SOT723 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 7980 шт: термін постачання 21-30 дні (днів) |
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NRVB0540T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Application: automotive industry Case: SOD123 Kind of package: reel; tape Mounting: SMD Type of diode: Schottky switching Semiconductor structure: single diode Load current: 0.5A Max. forward voltage: 0.61V Max. load current: 1A Max. forward impulse current: 5.5A Max. off-state voltage: 40V |
на замовлення 595 шт: термін постачання 21-30 дні (днів) |
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FDD3682 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Power dissipation: 95W Case: DPAK Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
| NTF6P02T3G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; 20V; 10A; 8.3W; SOT223 Type of transistor: P-MOSFET Drain-source voltage: 20V Drain current: 10A Power dissipation: 8.3W Case: SOT223 Gate-source voltage: 8V On-state resistance: 70mΩ Mounting: SMD Gate charge: 20nC Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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FDP3632 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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ESD5B5.0ST1G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.2W; 6.8V; bidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 1µA Peak pulse power dissipation: 0.2W Version: ESD |
на замовлення 7038 шт: термін постачання 21-30 дні (днів) |
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74LCX125BQX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Manufacturer series: LCX Mounting: SMD Case: QFN14 Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Kind of package: reel; tape Kind of output: 3-state Quiescent current: 10µA |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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NUP4114UCLW1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6.5V Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Kind of package: reel; tape Leakage current: 1µA Version: ESD Max. forward impulse current: 12A |
на замовлення 2748 шт: термін постачання 21-30 дні (днів) |
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NUP4114UCW1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6.5V Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Kind of package: reel; tape Leakage current: 1µA Version: ESD Max. forward impulse current: 12A |
на замовлення 3025 шт: термін постачання 21-30 дні (днів) |
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| NCP51199PDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.75...2.5V Output current: 2A Mounting: SMD Case: SO8-EP Number of channels: 1 Operating temperature: max. 125°C Application: for DDR memories Operating voltage: 1.5...5.5/4.75...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP511SN30T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 3V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP511SN27T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.7V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.7V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.7...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP511SN25T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.11V Output voltage: 2.5V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.5...6V |
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В кошику од. на суму грн. | |||||||||||||||||||
| NCP511SN15T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.245V Output voltage: 1.5V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP511SN18T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 1.8V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.8...6V |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR30H100MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: single diode
Case: DFN5x6
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: single diode
Case: DFN5x6
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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| MBR30H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 30A
Max. forward impulse current: 250A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 30A
Max. forward impulse current: 250A
Kind of package: tube
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| 2SK3557-6-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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| 2SK3557-7-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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| MMBZ6V8ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Version: ESD
Kind of package: reel; tape
Tolerance: ±5%
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Version: ESD
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 7751 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 76+ | 5.24 грн |
| 172+ | 2.31 грн |
| 500+ | 1.59 грн |
| 1000+ | 1.46 грн |
| 3000+ | 1.45 грн |
| SZMMBZ6V8ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| SZMMBZ6V8ALT3G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46V; 2.5A; 24W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.46V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Number of channels: 2
Application: automotive industry
Version: ESD
Operating temperature: -55...150°C
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46V; 2.5A; 24W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.46V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Number of channels: 2
Application: automotive industry
Version: ESD
Operating temperature: -55...150°C
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.30 грн |
| MMBZ5V6ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: universal
Version: ESD
Leakage current: 5µA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
Peak pulse power dissipation: 24W
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Application: universal
Version: ESD
Leakage current: 5µA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
Peak pulse power dissipation: 24W
на замовлення 1746 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.11 грн |
| 55+ | 7.30 грн |
| 80+ | 5.00 грн |
| 100+ | 4.21 грн |
| 500+ | 2.78 грн |
| 1000+ | 2.31 грн |
| 1200+ | 2.19 грн |
| FDMS004N08C |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS015N04B |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS0306AS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PCA9306FMUTCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
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| PCA9306AMUTCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
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| PCA9306FMUTAG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
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| MC74AC08DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Kind of gate: AND
Family: AC
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Kind of gate: AND
Family: AC
Number of inputs: 2
на замовлення 429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.17 грн |
| 15+ | 27.06 грн |
| 25+ | 24.28 грн |
| 43+ | 22.14 грн |
| 110+ | 20.95 грн |
| 275+ | 20.16 грн |
| MC74AC08DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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| MC74AC08DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
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| MC74AC32DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Kind of gate: OR
Family: AC
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Kind of gate: OR
Family: AC
Number of inputs: 2
на замовлення 311 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.19 грн |
| 10+ | 45.63 грн |
| 25+ | 28.89 грн |
| 39+ | 24.20 грн |
| 106+ | 22.94 грн |
| D44VH10G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 338 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.06 грн |
| 10+ | 43.01 грн |
| 50+ | 39.20 грн |
| FDMC8030 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FCB110N65F |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
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| MJF15030G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Collector-emitter voltage: 150V
Current gain: 40
Power dissipation: 36W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Collector-emitter voltage: 150V
Current gain: 40
Power dissipation: 36W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
на замовлення 166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 135.03 грн |
| 10+ | 74.60 грн |
| 15+ | 65.08 грн |
| 40+ | 61.90 грн |
| 50+ | 61.11 грн |
| 100+ | 59.52 грн |
| MJF15031G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: PNP
Mounting: THT
Collector current: 8A
Power dissipation: 36W
Current gain: 40
Collector-emitter voltage: 150V
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: PNP
Mounting: THT
Collector current: 8A
Power dissipation: 36W
Current gain: 40
Collector-emitter voltage: 150V
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.09 грн |
| 10+ | 129.36 грн |
| 11+ | 92.85 грн |
| 28+ | 88.09 грн |
| 100+ | 84.92 грн |
| NTS2101PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Case: SC70; SOT323
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Case: SC70; SOT323
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.22 грн |
| 24+ | 16.98 грн |
| 26+ | 15.32 грн |
| 50+ | 13.97 грн |
| 100+ | 12.62 грн |
| 159+ | 5.87 грн |
| 435+ | 5.56 грн |
| NTZD3155CT2G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
на замовлення 3459 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.49 грн |
| 25+ | 15.87 грн |
| 33+ | 12.22 грн |
| 100+ | 8.41 грн |
| 130+ | 7.22 грн |
| 358+ | 6.82 грн |
| 500+ | 6.59 грн |
| MBT3904DW1T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
на замовлення 9500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.26 грн |
| 91+ | 4.36 грн |
| 130+ | 3.06 грн |
| 250+ | 2.67 грн |
| 500+ | 2.41 грн |
| 1000+ | 2.18 грн |
| 2000+ | 1.98 грн |
| 5000+ | 1.75 грн |
| GBPC1202 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 12A
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 200V
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 12A
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 200V
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
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| 1N4148-T26A |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
на замовлення 32955 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.84 грн |
| 100+ | 3.97 грн |
| 302+ | 1.32 грн |
| 500+ | 0.86 грн |
| 1000+ | 0.75 грн |
| 2500+ | 0.65 грн |
| 5000+ | 0.61 грн |
| 10000+ | 0.58 грн |
| ES1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Capacitance: 10pF
Reverse recovery time: 35ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Capacitance: 10pF
Reverse recovery time: 35ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
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| CPH3910-TL-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Case: CPH3
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Drain-source voltage: 25V
Gate-source voltage: -25V
Gate current: 10mA
Power dissipation: 0.4W
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Case: CPH3
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Drain-source voltage: 25V
Gate-source voltage: -25V
Gate current: 10mA
Power dissipation: 0.4W
на замовлення 585 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.31 грн |
| 15+ | 26.90 грн |
| 50+ | 20.32 грн |
| 77+ | 12.14 грн |
| 212+ | 11.51 грн |
| MC14518BDWG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
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| MC14518BDWR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
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| NCP511SN50T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.15A; TSOP5; SMD; NCP511
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 75mV
Output voltage: 5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.15A; TSOP5; SMD; NCP511
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 75mV
Output voltage: 5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...6V
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| MBRS1100T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.75V
Load current: 1A
Max. off-state voltage: 100V
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.75V
Load current: 1A
Max. off-state voltage: 100V
Case: SMB
на замовлення 11255 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.91 грн |
| 18+ | 22.22 грн |
| 20+ | 20.32 грн |
| 50+ | 16.35 грн |
| 100+ | 14.68 грн |
| 146+ | 6.43 грн |
| 400+ | 6.11 грн |
| 5000+ | 5.87 грн |
| 1N4736A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
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| 1N4736ATR | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Kind of package: reel; tape
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| 1N5931BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
на замовлення 1702 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.66 грн |
| 34+ | 11.75 грн |
| 50+ | 9.05 грн |
| 100+ | 8.17 грн |
| 124+ | 7.54 грн |
| 340+ | 7.14 грн |
| 500+ | 6.82 грн |
| 1N5344BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
на замовлення 3212 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.62 грн |
| 17+ | 24.28 грн |
| 50+ | 18.41 грн |
| 73+ | 12.78 грн |
| 201+ | 12.06 грн |
| 1000+ | 11.59 грн |
| 1N5344BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
на замовлення 1056 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.09 грн |
| 28+ | 14.28 грн |
| 30+ | 13.41 грн |
| 50+ | 11.90 грн |
| NCP45525IMNTWG-H |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
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| NCP45525IMNTWG-L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
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| MC74ACT132DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
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| MC74ACT132DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: ACT
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| NCP1337DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
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| MM3Z15VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 4160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 81+ | 4.92 грн |
| 129+ | 3.08 грн |
| 159+ | 2.50 грн |
| 500+ | 1.67 грн |
| 657+ | 1.42 грн |
| 1500+ | 1.36 грн |
| 1806+ | 1.34 грн |
| 3000+ | 1.29 грн |
| BC847BM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 7980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.09 грн |
| 35+ | 11.43 грн |
| 53+ | 7.59 грн |
| 100+ | 6.29 грн |
| 250+ | 4.98 грн |
| 500+ | 4.25 грн |
| 1000+ | 3.67 грн |
| 5000+ | 2.98 грн |
| NRVB0540T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.5A
Max. forward voltage: 0.61V
Max. load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.5A
Max. forward voltage: 0.61V
Max. load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 40V
на замовлення 595 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.93 грн |
| 23+ | 17.30 грн |
| 28+ | 14.52 грн |
| 35+ | 11.59 грн |
| 100+ | 8.33 грн |
| 115+ | 8.09 грн |
| 250+ | 7.46 грн |
| FDD3682 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| NTF6P02T3G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 20V; 10A; 8.3W; SOT223
Type of transistor: P-MOSFET
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 8.3W
Case: SOT223
Gate-source voltage: 8V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 20V; 10A; 8.3W; SOT223
Type of transistor: P-MOSFET
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 8.3W
Case: SOT223
Gate-source voltage: 8V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 47.78 грн |
| FDP3632 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 304.26 грн |
| 6+ | 166.66 грн |
| 16+ | 157.93 грн |
| ESD5B5.0ST1G | ![]() |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.2W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Peak pulse power dissipation: 0.2W
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.2W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Peak pulse power dissipation: 0.2W
Version: ESD
на замовлення 7038 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.26 грн |
| 50+ | 8.09 грн |
| 55+ | 7.22 грн |
| 100+ | 4.56 грн |
| 500+ | 3.24 грн |
| 1000+ | 2.79 грн |
| 3000+ | 2.59 грн |
| 74LCX125BQX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Manufacturer series: LCX
Mounting: SMD
Case: QFN14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Manufacturer series: LCX
Mounting: SMD
Case: QFN14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 10µA
на замовлення 210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.83 грн |
| 12+ | 34.20 грн |
| 25+ | 28.25 грн |
| 36+ | 26.27 грн |
| 50+ | 24.52 грн |
| 100+ | 23.81 грн |
| NUP4114UCLW1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
на замовлення 2748 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.64 грн |
| 21+ | 19.52 грн |
| 23+ | 17.46 грн |
| 50+ | 13.17 грн |
| 100+ | 11.59 грн |
| 114+ | 8.17 грн |
| 314+ | 7.70 грн |
| 1000+ | 7.46 грн |
| NUP4114UCW1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
на замовлення 3025 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.78 грн |
| 24+ | 17.14 грн |
| 50+ | 12.78 грн |
| 100+ | 11.35 грн |
| 111+ | 8.41 грн |
| 306+ | 7.94 грн |
| 1000+ | 7.62 грн |
| NCP51199PDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V DC
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| NCP511SN30T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
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| NCP511SN27T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.7V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.7...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.7V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.7...6V
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В кошику
од. на суму грн.
| NCP511SN25T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.11V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.11V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...6V
товару немає в наявності
В кошику
од. на суму грн.
| NCP511SN15T1G |
![]() |
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
товару немає в наявності
В кошику
од. на суму грн.
| NCP511SN18T1G |
![]() |
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.8...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.8...6V
товару немає в наявності
В кошику
од. на суму грн.























