| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| LM239DTBR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Mounting: SMT Case: TSSOP14 Input offset voltage: 5mV Input offset current: 5nA Input bias current: 25nA Operating temperature: -25...85°C Operating voltage: 3...36V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MG2040MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape Number of channels: 14 Application: HDMI Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape Case: uDFN18 Type of diode: TVS array Max. off-state voltage: 5V Breakdown voltage: 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMG2040MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; uDFN18; Ch: 14; reel,tape Number of channels: 14 Application: automotive industry Semiconductor structure: unidirectional Mounting: SMD Kind of package: reel; tape Case: uDFN18 Type of diode: TVS array |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4746A-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 18V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Mounting: THT Tolerance: ±5% Case: DO41 Kind of package: Ammo Pack Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 6N135M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 20V; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 7-50%@16mA Case: DIP8 Turn-on time: 1.5µs Turn-off time: 1.5µs Manufacturer series: 6N135M Collector-emitter voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TIP102G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 2W Case: TO220AB Current gain: 20000 Mounting: THT Kind of package: tube Heatsink thickness: 1.15...1.39mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV199LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.215A; 3ns; SOT23; Ufmax: 1V; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.215A Reverse recovery time: 3ns Semiconductor structure: double series Capacitance: 2pF Case: SOT23 Max. forward voltage: 1V Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A |
на замовлення 340 шт: термін постачання 14-30 дні (днів) |
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SBAV199LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: double series Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 80nA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 2499 шт: термін постачання 14-30 дні (днів) |
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MUR120RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; Ufmax: 0.875V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 35ns Max. forward voltage: 0.875V |
на замовлення 3131 шт: термін постачання 14-30 дні (днів) |
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| MUR120RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 35ns |
на замовлення 3345 шт: термін постачання 14-30 дні (днів) |
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| MUR120G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC556ABU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...220 Mounting: THT Frequency: 150MHz Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5221B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 1N52xxB Kind of package: bulk Case: CASE017AG Mounting: THT Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 2.4V Manufacturer series: 1N52xxB |
на замовлення 3786 шт: термін постачання 14-30 дні (днів) |
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BZX84C2V4LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 3331 шт: термін постачання 14-30 дні (днів) |
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FOD817A | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 80-160%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD817 |
на замовлення 3474 шт: термін постачання 14-30 дні (днів) |
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FOD817A3SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 80-160%@5mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
на замовлення 3539 шт: термін постачання 14-30 дні (днів) |
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FOD817AS | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; PDIP4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 80-160%@5mA Collector-emitter voltage: 70V Case: PDIP4 Manufacturer series: FOD817 Max. off-state voltage: 6V |
на замовлення 1551 шт: термін постачання 14-30 дні (днів) |
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FOD817ASD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 80-160%@5mA Collector-emitter voltage: 70V Case: SO4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
на замовлення 3749 шт: термін постачання 14-30 дні (днів) |
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FOD817A300W | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 80-160%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD817 |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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FOD817A300 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 80-160%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD817 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FOD817A3S | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Collector-emitter voltage: 70V Case: SMD4 Collector current: 50mA Number of pins: 4 Max. off-state voltage: 6V |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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LM285D-1.2R2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Tolerance: ±1% Reference voltage: 1.235V Maximum output current: 20mA |
на замовлення 685 шт: термін постачання 14-30 дні (днів) |
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LM285D-1.2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.235V; ±1%; SO8; tube; 20mA Type of integrated circuit: voltage reference source Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Tolerance: ±1% Reference voltage: 1.235V Maximum output current: 20mA |
на замовлення 89 шт: термін постачання 14-30 дні (днів) |
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LM285D-2.5G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA Type of integrated circuit: voltage reference source Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Tolerance: ±1.5% Reference voltage: 2.5V Maximum output current: 20mA |
на замовлення 61 шт: термін постачання 14-30 дні (днів) |
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CAT24C128WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: I2C Memory organisation: 16kx8bit Operating voltage: 1.7...5.5V Mounting: SMD Case: SO8 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| NV24C128MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128b EEPROM Interface: I2C Memory organisation: 16kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 0.4ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C128YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.8÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: I2C Memory organisation: 16kx8bit Operating voltage: 1.8...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C128WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: I2C Memory organisation: 16kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C128YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: I2C Memory organisation: 16kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ESD7351HT1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 0.15W; 5V; SOD323; reel,tape; 0.43÷0.6pF Type of diode: TVS Version: ESD Max. off-state voltage: 3.3V Breakdown voltage: 5V Mounting: SMD Leakage current: 1nA Kind of package: reel; tape Capacitance: 0.43...0.6pF Peak pulse power dissipation: 0.15W Case: SOD323 |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| SZESD7351HT1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD323; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD323 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5282TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns Case: DO35 Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Features of semiconductor devices: small signal Type of diode: switching Reverse recovery time: 4ns Load current: 0.2A Max. forward impulse current: 4A Max. off-state voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBC857BLT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MOC3051M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 600V; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 600V Kind of output: without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5235BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 489 шт: термін постачання 14-30 дні (днів) |
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| NSVMUN2233T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 7kΩ Quantity in set/package: 3000pcs. Current gain: 80...200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5336BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 4.3V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 4.3V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 2833 шт: термін постачання 14-30 дні (днів) |
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SBAV199LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: double series Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 80nA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SK2394-6-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA Case: SC59 Mounting: SMD Kind of package: reel; tape Drain current: 10mA Gate current: 10mA Power dissipation: 0.2W Drain-source voltage: 15V Gate-source voltage: -15V Type of transistor: N-JFET Polarisation: unipolar |
на замовлення 2992 шт: термін постачання 14-30 дні (днів) |
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| MMBTA13 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMMBTA13LT1G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMBJ15CA | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 100A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NV24C04MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NV24C04DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C04WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C04WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C04C4ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C04YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C04YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
LM358M | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8; Ch: dual Type of integrated circuit: operational amplifier Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4448 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Max. load current: 0.4A |
на замовлення 612 шт: термін постачання 14-30 дні (днів) |
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1N4448TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.5W Kind of package: reel; tape |
на замовлення 6341 шт: термін постачання 14-30 дні (днів) |
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1N4448WT | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 4pF Case: SOD523F Max. forward voltage: 1V Leakage current: 5µA Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 3189 шт: термін постачання 14-30 дні (днів) |
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| UF4006 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Power dissipation: 2.08W Leakage current: 75µA Capacitance: 17pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MMBTA06LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 37521 шт: термін постачання 14-30 дні (днів) |
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SMMBTA06LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 3641 шт: термін постачання 14-30 дні (днів) |
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MC79L15ACPRAG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.1A Case: TO92 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Voltage drop: 1.7V Tolerance: ±2% Manufacturer series: MC79L00A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BC846BLT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 50000 шт: термін постачання 14-30 дні (днів) |
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DTC144EET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 47kΩ Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN |
на замовлення 860 шт: термін постачання 14-30 дні (днів) |
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DTA115EET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416 Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 80...150 Base resistor: 100kΩ Base-emitter resistor: 100kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
на замовлення 5985 шт: термін постачання 14-30 дні (днів) |
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| LM239DTBR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Input offset voltage: 5mV
Input offset current: 5nA
Input bias current: 25nA
Operating temperature: -25...85°C
Operating voltage: 3...36V
Kind of package: reel; tape
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Input offset voltage: 5mV
Input offset current: 5nA
Input bias current: 25nA
Operating temperature: -25...85°C
Operating voltage: 3...36V
Kind of package: reel; tape
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В кошику
од. на суму грн.
| MG2040MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Application: HDMI
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Case: uDFN18
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Application: HDMI
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Case: uDFN18
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
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В кошику
од. на суму грн.
| SZMG2040MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Application: automotive industry
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Case: uDFN18
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; uDFN18; Ch: 14; reel,tape
Number of channels: 14
Application: automotive industry
Semiconductor structure: unidirectional
Mounting: SMD
Kind of package: reel; tape
Case: uDFN18
Type of diode: TVS array
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В кошику
од. на суму грн.
| 1N4746A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: THT
Tolerance: ±5%
Case: DO41
Kind of package: Ammo Pack
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: THT
Tolerance: ±5%
Case: DO41
Kind of package: Ammo Pack
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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В кошику
од. на суму грн.
| 6N135M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 20V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 7-50%@16mA
Case: DIP8
Turn-on time: 1.5µs
Turn-off time: 1.5µs
Manufacturer series: 6N135M
Collector-emitter voltage: 20V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 20V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 7-50%@16mA
Case: DIP8
Turn-on time: 1.5µs
Turn-off time: 1.5µs
Manufacturer series: 6N135M
Collector-emitter voltage: 20V
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| TIP102G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
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од. на суму грн.
| BAV199LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3ns; SOT23; Ufmax: 1V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3ns; SOT23; Ufmax: 1V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
на замовлення 340 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.99 грн |
| 67+ | 6.26 грн |
| 96+ | 4.36 грн |
| 114+ | 3.69 грн |
| SBAV199LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 80nA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 80nA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 2499 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.89 грн |
| 57+ | 7.35 грн |
| 65+ | 6.51 грн |
| MUR120RLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; Ufmax: 0.875V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Max. forward voltage: 0.875V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; Ufmax: 0.875V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Max. forward voltage: 0.875V
на замовлення 3131 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.29 грн |
| 34+ | 12.53 грн |
| 37+ | 11.53 грн |
| 100+ | 8.27 грн |
| 500+ | 7.02 грн |
| 1000+ | 6.43 грн |
| 2500+ | 5.51 грн |
| MUR120RLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
на замовлення 3345 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.59 грн |
| 39+ | 10.86 грн |
| 41+ | 10.36 грн |
| 100+ | 8.69 грн |
| 250+ | 7.85 грн |
| 500+ | 7.27 грн |
| 1000+ | 6.51 грн |
| 2500+ | 5.60 грн |
| MUR120G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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В кошику
од. на суму грн.
| BC556ABU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...220
Mounting: THT
Frequency: 150MHz
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...220
Mounting: THT
Frequency: 150MHz
Kind of package: bulk
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од. на суму грн.
| 1N5221B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 1N52xxB
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 2.4V
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 1N52xxB
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 2.4V
Manufacturer series: 1N52xxB
на замовлення 3786 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 105+ | 4.01 грн |
| 148+ | 2.84 грн |
| 261+ | 1.60 грн |
| 307+ | 1.36 грн |
| BZX84C2V4LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 3331 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 81+ | 5.18 грн |
| 91+ | 4.59 грн |
| 136+ | 3.07 грн |
| 169+ | 2.48 грн |
| 500+ | 1.49 грн |
| 1000+ | 1.28 грн |
| 1500+ | 1.21 грн |
| 3000+ | 1.12 грн |
| FOD817A |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD817
на замовлення 3474 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.49 грн |
| 30+ | 14.20 грн |
| 100+ | 10.86 грн |
| 500+ | 8.85 грн |
| 1000+ | 7.93 грн |
| 2000+ | 7.10 грн |
| FOD817A3SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
на замовлення 3539 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.88 грн |
| 28+ | 15.03 грн |
| 100+ | 10.77 грн |
| 500+ | 8.60 грн |
| FOD817AS |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; PDIP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: PDIP4
Manufacturer series: FOD817
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; PDIP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: PDIP4
Manufacturer series: FOD817
Max. off-state voltage: 6V
на замовлення 1551 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.38 грн |
| 29+ | 14.62 грн |
| 100+ | 11.94 грн |
| 500+ | 10.11 грн |
| 1000+ | 9.27 грн |
| FOD817ASD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
на замовлення 3749 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.58 грн |
| 21+ | 20.71 грн |
| 40+ | 16.79 грн |
| 100+ | 14.53 грн |
| 150+ | 13.70 грн |
| 500+ | 11.36 грн |
| 1000+ | 10.19 грн |
| 2000+ | 9.10 грн |
| 3000+ | 8.60 грн |
| FOD817A300W |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD817
на замовлення 11 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 37.58 грн |
| FOD817A300 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD817
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| FOD817A3S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: SMD4
Collector current: 50mA
Number of pins: 4
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: SMD4
Collector current: 50mA
Number of pins: 4
Max. off-state voltage: 6V
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 8.00 грн |
| LM285D-1.2R2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Tolerance: ±1%
Reference voltage: 1.235V
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Tolerance: ±1%
Reference voltage: 1.235V
Maximum output current: 20mA
на замовлення 685 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.17 грн |
| 15+ | 28.90 грн |
| 25+ | 28.23 грн |
| LM285D-1.2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Tolerance: ±1%
Reference voltage: 1.235V
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Tolerance: ±1%
Reference voltage: 1.235V
Maximum output current: 20mA
на замовлення 89 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.63 грн |
| 10+ | 54.95 грн |
| 25+ | 42.59 грн |
| LM285D-2.5G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Tolerance: ±1.5%
Reference voltage: 2.5V
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Tolerance: ±1.5%
Reference voltage: 2.5V
Maximum output current: 20mA
на замовлення 61 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 49.47 грн |
| 13+ | 33.07 грн |
| 20+ | 29.40 грн |
| CAT24C128WI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SO8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SO8
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.18 грн |
| 16+ | 26.56 грн |
| 25+ | 26.22 грн |
| 50+ | 26.14 грн |
| NV24C128MUW3VTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128b EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128b EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
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| CAT24C128YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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од. на суму грн.
| CAV24C128WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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од. на суму грн.
| CAV24C128YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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од. на суму грн.
| ESD7351HT1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5V; SOD323; reel,tape; 0.43÷0.6pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Peak pulse power dissipation: 0.15W
Case: SOD323
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5V; SOD323; reel,tape; 0.43÷0.6pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Peak pulse power dissipation: 0.15W
Case: SOD323
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 449.71 грн |
| SZESD7351HT1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| 1N5282TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns
Case: DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns
Case: DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. forward impulse current: 4A
Max. off-state voltage: 80V
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| NSVBC857BLT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| MOC3051M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
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| MMSZ5235BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 489 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.20 грн |
| 91+ | 4.61 грн |
| 109+ | 3.83 грн |
| 200+ | 3.02 грн |
| 250+ | 2.79 грн |
| NSVMUN2233T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 7kΩ
Quantity in set/package: 3000pcs.
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 7kΩ
Quantity in set/package: 3000pcs.
Current gain: 80...200
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| 1N5336BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.3V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.3V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.3V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.3V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 2833 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.38 грн |
| 21+ | 20.63 грн |
| 100+ | 15.03 грн |
| 250+ | 12.53 грн |
| 500+ | 12.19 грн |
| SBAV199LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 80nA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 80nA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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| 2SK2394-6-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Drain current: 10mA
Gate current: 10mA
Power dissipation: 0.2W
Drain-source voltage: 15V
Gate-source voltage: -15V
Type of transistor: N-JFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Drain current: 10mA
Gate current: 10mA
Power dissipation: 0.2W
Drain-source voltage: 15V
Gate-source voltage: -15V
Type of transistor: N-JFET
Polarisation: unipolar
на замовлення 2992 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.76 грн |
| 11+ | 41.42 грн |
| 12+ | 35.58 грн |
| 50+ | 23.47 грн |
| 100+ | 19.88 грн |
| 500+ | 15.03 грн |
| MMBTA13 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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| SMMBTA13LT1G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
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| SMBJ15CA |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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| NV24C04MUW3VLTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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| NV24C04DTVLT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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| CAT24C04WI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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| CAV24C04WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| CAT24C04C4ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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| CAT24C04YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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| CAV24C04YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| LM358M |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8; Ch: dual
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...85°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8; Ch: dual
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...85°C
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| 1N4448 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Max. load current: 0.4A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Max. load current: 0.4A
на замовлення 612 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 97+ | 4.34 грн |
| 186+ | 2.25 грн |
| 250+ | 1.69 грн |
| 500+ | 1.39 грн |
| 1N4448TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
на замовлення 6341 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 129+ | 3.26 грн |
| 186+ | 2.25 грн |
| 217+ | 1.93 грн |
| 265+ | 1.58 грн |
| 500+ | 1.35 грн |
| 1000+ | 1.17 грн |
| 2000+ | 1.01 грн |
| 5000+ | 0.88 грн |
| 1N4448WT |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Leakage current: 5µA
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Leakage current: 5µA
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 3189 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.20 грн |
| 74+ | 5.68 грн |
| 82+ | 5.09 грн |
| 122+ | 3.42 грн |
| 500+ | 2.56 грн |
| 1000+ | 2.25 грн |
| 2000+ | 2.00 грн |
| UF4006 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
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| MMBTA06LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 37521 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.99 грн |
| 71+ | 5.93 грн |
| 104+ | 4.03 грн |
| 125+ | 3.36 грн |
| 500+ | 2.27 грн |
| 1000+ | 1.95 грн |
| 1500+ | 1.79 грн |
| 3000+ | 1.56 грн |
| 6000+ | 1.39 грн |
| SMMBTA06LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 3641 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.79 грн |
| 60+ | 7.02 грн |
| 66+ | 6.35 грн |
| 85+ | 4.96 грн |
| 100+ | 4.29 грн |
| 500+ | 4.18 грн |
| MC79L15ACPRAG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.7V
Tolerance: ±2%
Manufacturer series: MC79L00A
Kind of package: reel; tape
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| BC846BLT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 50000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 0.83 грн |
| 20000+ | 0.74 грн |
| 30000+ | 0.73 грн |
| 50000+ | 0.70 грн |
| DTC144EET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 47kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 47kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
на замовлення 860 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.89 грн |
| 72+ | 5.85 грн |
| 101+ | 4.16 грн |
| 117+ | 3.58 грн |
| 500+ | 2.59 грн |
| DTA115EET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
на замовлення 5985 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.79 грн |
| 70+ | 6.01 грн |
| 110+ | 3.82 грн |
| 500+ | 2.83 грн |
| 1000+ | 2.50 грн |
| 3000+ | 2.08 грн |





























