| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FST3125DTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: 4bit; bus switch Number of channels: 4 Number of inputs: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape |
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FST3125MTCX | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: 4bit; bus switch Number of channels: 4 Number of inputs: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 3µA |
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| NCP130BMX080TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...85°C Case: XDFN6 Type of integrated circuit: voltage regulator Manufacturer series: NCP130 Voltage drop: 0.15V Output current: 0.3A Output voltage: 0.8V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% Kind of voltage regulator: fixed; LDO; linear |
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| NCP130AMX080TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...85°C Case: XDFN6 Type of integrated circuit: voltage regulator Manufacturer series: NCP130 Voltage drop: 0.15V Output current: 0.3A Output voltage: 0.8V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% Kind of voltage regulator: fixed; LDO; linear |
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| FGH75T65SHDTL4 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 227W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 227W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 126nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
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| FGH75T65SQDNL4 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 152nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
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| NTBG020N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W Type of transistor: N-MOSFET Power dissipation: 3.7W Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 0.22µC On-state resistance: 50mΩ Drain current: 8.6A Pulsed drain current: 392A Drain-source voltage: 1.2kV |
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MOC8050M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV Collector-emitter voltage: 80V Case: DIP6 Turn-on time: 8.5µs CTR@If: 500%@10mA Turn-off time: 95µs |
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| NTLJS2103PTBG | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6 Drain current: -7.7A Gate charge: 12.8nC On-state resistance: 25mΩ Power dissipation: 3.3W Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: WDFN6 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -12V |
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FCB260N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 30A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 794 шт: термін постачання 21-30 дні (днів) |
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| FCD260N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 30A Power dissipation: 90W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTPF360N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 28A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 17.5nC Kind of package: tube Kind of channel: enhancement |
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| FDB150N10 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTND31225CZTAG | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Case: XLLGA6 Kind of channel: enhancement Type of transistor: N/P-MOSFET Power dissipation: 0.125W Drain current: 220/-127mA On-state resistance: 1.5/5Ω Gate-source voltage: ±8V Drain-source voltage: 20/-20V Polarisation: unipolar Kind of package: reel; tape Kind of transistor: complementary pair |
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| MC33262DR2G | ONSEMI |
Category: Integrated circuits - othersDescription: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Case: SO8 Mounting: SMD Kind of package: reel; tape Application: SMPS Output current: 0.5A Operating voltage: 12...28V DC Output voltage: 6.4V |
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MC33262PG | ONSEMI |
Category: Integrated circuits - othersDescription: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Case: DIP8 Mounting: THT Kind of package: tube Application: SMPS Output current: 0.5A Operating voltage: 12...28V DC Output voltage: 6.4V |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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| FAN4800AUN | ONSEMI |
Category: Integrated circuits - othersDescription: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller; PWM controller Case: DIP16 Mounting: SMD Operating temperature: -40...105°C Topology: boost |
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| FAN4800AUM | ONSEMI |
Category: Integrated circuits - othersDescription: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller; PWM controller Case: SO16 Mounting: SMD Operating temperature: -40...105°C Topology: boost |
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| FUSB2805MLX | ONSEMI |
Category: USB interfaces - integrated circuitsDescription: IC: interface; ULPI; transceiver; 2.7÷4.5VDC; MLP32; USB 2.0 Operating temperature: -40...85°C Case: MLP32 Type of integrated circuit: interface Mounting: SMD Kind of integrated circuit: transceiver Interface: ULPI Kind of connector: USB 2.0 Supply voltage: 2.7...4.5V DC Data transfer rate: 0.48Gbps |
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NCP115ASN330T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: TSOP5 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Type of integrated circuit: voltage regulator Output current: 0.3A |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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| NCP114ASN330T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: TSOP5 Mounting: SMD Number of channels: 1 Voltage drop: 0.225V Operating temperature: -40...85°C Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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2N7000 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
на замовлення 3940 шт: термін постачання 21-30 дні (днів) |
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FDS9958 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 612 шт: термін постачання 21-30 дні (днів) |
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FDS6679AZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Case: SO8 Drain-source voltage: -30V Drain current: -13A Gate charge: 96nC On-state resistance: 14.8mΩ Power dissipation: 2.5W Gate-source voltage: ±25V Polarisation: unipolar |
на замовлення 485 шт: термін постачання 21-30 дні (днів) |
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| NTMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Power dissipation: 58W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
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74VHCT08AMTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHCT Quiescent current: 20µA |
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74VHCT08AMX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHCT Quiescent current: 20µA |
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NCP1063AD060R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO16; 7÷20VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.78A Frequency: 54...66kHz Mounting: SMD Case: SO16 Topology: buck; buck-boost; flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 7...20V DC On-state resistance: 14Ω |
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| FDB0250N807L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 240A; Idm: 1110A; 214W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 240A Pulsed drain current: 1110A Power dissipation: 214W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
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NCP1380BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; 9÷28VDC Type of integrated circuit: PMIC Output current: -800...500mA Mounting: SMD Case: SO8 Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V DC |
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| MC74ACT240DWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: TTL Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: ACT Kind of package: reel; tape Manufacturer series: ACT |
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LMV339DTBR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape Type of integrated circuit: comparator Operating voltage: 2.7...5V Mounting: SMT Case: TSSOP14 Operating temperature: -40...85°C Input offset voltage: 9mV Input bias current: 1nA Kind of comparator: universal Number of comparators: 4 Kind of package: reel; tape Input offset current: 1nA |
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| FDMS7680 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 80A Power dissipation: 33W Case: Power56 Gate-source voltage: ±20V On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
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FQL40N50F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Pulsed drain current: 160A Power dissipation: 460W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
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| FDC86244 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W Gate charge: 6nC On-state resistance: 273mΩ Power dissipation: 1.6W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Case: SuperSOT-6 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 150V Pulsed drain current: 10A Drain current: 2.3A |
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FSBB20CH60C | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027 Type of integrated circuit: driver Topology: IGBT three-phase bridge Technology: Motion SPM® 3 Mounting: THT Operating temperature: -40...125°C Power dissipation: 62W Output current: 20A Number of channels: 6 Collector-emitter voltage: 600V Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Kind of integrated circuit: 3-phase motor controller; IPM Case: SPMMC-027 |
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| MC74LVXT4051DTRG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT |
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| MC74LVXT4053DTRG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; SMD Mounting: SMD Family: LVXT Manufacturer series: LVXT Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: -6...0V DC; 2.5...6V DC Number of channels: 3 Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Type of integrated circuit: digital Technology: CMOS; TTL Case: TSSOP16 |
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FGB3040G2-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
на замовлення 741 шт: термін постачання 21-30 дні (днів) |
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| NCP130AMX180TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD Case: XDFN6 Mounting: SMD Operating temperature: -40...85°C Output current: 0.3A Output voltage: 1.8V Voltage drop: 0.15V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP130 |
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| NCP130BMX180TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD Case: XDFN6 Mounting: SMD Operating temperature: -40...85°C Output current: 0.3A Output voltage: 1.8V Voltage drop: 0.15V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP130 |
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MC74HC1G00DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
на замовлення 1116 шт: термін постачання 21-30 дні (днів) |
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| MC74HC1G08DFT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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| MC74HC1G08DFT2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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MC74HCT4851ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Family: HCT Kind of package: reel; tape Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: HCT |
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MC74HCT4852ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD Family: HCT Kind of package: reel; tape Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of channels: 2 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: HCT |
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| M74HCT4852ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5 Family: HCT Kind of package: reel; tape Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Number of channels: 2 Supply voltage: 4...5.5V DC Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of inputs: 5 Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: HCT |
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| NTP125N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
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MC14503BDR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape Mounting: SMD Number of inputs: 1 Supply voltage: 3...18V DC Kind of output: 3-state Kind of integrated circuit: 3-state; buffer; hex Type of integrated circuit: digital Technology: CMOS Case: SOIC16 Number of channels: 6 |
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MM74HCT574SJX | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: HCT |
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| NV25256DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape |
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| NV25256DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape |
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| NV25256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 10MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
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| CAV25256VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
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| CAV25256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
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|
BAS116LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 207 шт: термін постачання 21-30 дні (днів) |
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| BAS116TT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT416 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
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SBAS116LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 80nA Power dissipation: 0.225W Kind of package: reel; tape Application: automotive industry |
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| NSVBAS116LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
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В кошику од. на суму грн. | |||||||||||||||
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1N5956BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB Leakage current: 1µA |
на замовлення 5386 шт: термін постачання 21-30 дні (днів) |
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| FST3125DTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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| FST3125MTCX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
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| NCP130BMX080TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: XDFN6
Type of integrated circuit: voltage regulator
Manufacturer series: NCP130
Voltage drop: 0.15V
Output current: 0.3A
Output voltage: 0.8V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: XDFN6
Type of integrated circuit: voltage regulator
Manufacturer series: NCP130
Voltage drop: 0.15V
Output current: 0.3A
Output voltage: 0.8V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
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| NCP130AMX080TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: XDFN6
Type of integrated circuit: voltage regulator
Manufacturer series: NCP130
Voltage drop: 0.15V
Output current: 0.3A
Output voltage: 0.8V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: XDFN6
Type of integrated circuit: voltage regulator
Manufacturer series: NCP130
Voltage drop: 0.15V
Output current: 0.3A
Output voltage: 0.8V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
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| FGH75T65SHDTL4 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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| FGH75T65SQDNL4 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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| NTBG020N120SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
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| MOC8050M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 80V
Case: DIP6
Turn-on time: 8.5µs
CTR@If: 500%@10mA
Turn-off time: 95µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 80V
Case: DIP6
Turn-on time: 8.5µs
CTR@If: 500%@10mA
Turn-off time: 95µs
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| NTLJS2103PTBG |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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| FCB260N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 794 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.58 грн |
| 10+ | 160.31 грн |
| 25+ | 142.85 грн |
| 100+ | 133.33 грн |
| FCD260N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTPF360N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 28A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 28A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
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| FDB150N10 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTND31225CZTAG |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
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| MC33262DR2G |
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Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
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| MC33262PG | ![]() |
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Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.19 грн |
| 10+ | 55.55 грн |
| 25+ | 53.97 грн |
| FAN4800AUN |
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Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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| FAN4800AUM |
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Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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| FUSB2805MLX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI; transceiver; 2.7÷4.5VDC; MLP32; USB 2.0
Operating temperature: -40...85°C
Case: MLP32
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: transceiver
Interface: ULPI
Kind of connector: USB 2.0
Supply voltage: 2.7...4.5V DC
Data transfer rate: 0.48Gbps
Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI; transceiver; 2.7÷4.5VDC; MLP32; USB 2.0
Operating temperature: -40...85°C
Case: MLP32
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: transceiver
Interface: ULPI
Kind of connector: USB 2.0
Supply voltage: 2.7...4.5V DC
Data transfer rate: 0.48Gbps
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| NCP115ASN330T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
на замовлення 190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 59+ | 6.82 грн |
| 65+ | 6.11 грн |
| 74+ | 5.43 грн |
| 100+ | 4.44 грн |
| NCP114ASN330T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Number of channels: 1
Voltage drop: 0.225V
Operating temperature: -40...85°C
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Number of channels: 1
Voltage drop: 0.225V
Operating temperature: -40...85°C
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 55+ | 7.88 грн |
| 100+ | 4.60 грн |
| 376+ | 2.49 грн |
| 1032+ | 2.36 грн |
| 2N7000 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 3940 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.62 грн |
| 17+ | 24.44 грн |
| 19+ | 21.11 грн |
| 25+ | 16.67 грн |
| 100+ | 11.59 грн |
| 500+ | 9.05 грн |
| FDS9958 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 612 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.97 грн |
| 11+ | 39.44 грн |
| 34+ | 27.86 грн |
| 93+ | 26.35 грн |
| 500+ | 25.79 грн |
| FDS6679AZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Case: SO8
Drain-source voltage: -30V
Drain current: -13A
Gate charge: 96nC
On-state resistance: 14.8mΩ
Power dissipation: 2.5W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Case: SO8
Drain-source voltage: -30V
Drain current: -13A
Gate charge: 96nC
On-state resistance: 14.8mΩ
Power dissipation: 2.5W
Gate-source voltage: ±25V
Polarisation: unipolar
на замовлення 485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.01 грн |
| 10+ | 63.89 грн |
| 25+ | 52.54 грн |
| 26+ | 36.90 грн |
| 70+ | 34.92 грн |
| NTMJST2D6N08HTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 74VHCT08AMTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 20µA
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| 74VHCT08AMX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 20µA
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| NCP1063AD060R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; 7÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.78A
Frequency: 54...66kHz
Mounting: SMD
Case: SO16
Topology: buck; buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 7...20V DC
On-state resistance: 14Ω
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; 7÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.78A
Frequency: 54...66kHz
Mounting: SMD
Case: SO16
Topology: buck; buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 7...20V DC
On-state resistance: 14Ω
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| FDB0250N807L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; Idm: 1110A; 214W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Pulsed drain current: 1110A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; Idm: 1110A; 214W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Pulsed drain current: 1110A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NCP1380BDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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| MC74ACT240DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
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| LMV339DTBR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Operating voltage: 2.7...5V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Input offset voltage: 9mV
Input bias current: 1nA
Kind of comparator: universal
Number of comparators: 4
Kind of package: reel; tape
Input offset current: 1nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Operating voltage: 2.7...5V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Input offset voltage: 9mV
Input bias current: 1nA
Kind of comparator: universal
Number of comparators: 4
Kind of package: reel; tape
Input offset current: 1nA
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| FDMS7680 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FQL40N50F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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| FDC86244 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SuperSOT-6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 10A
Drain current: 2.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SuperSOT-6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 10A
Drain current: 2.3A
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| FSBB20CH60C |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
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| MC74LVXT4051DTRG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
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| MC74LVXT4053DTRG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; SMD
Mounting: SMD
Family: LVXT
Manufacturer series: LVXT
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP16
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; SMD
Mounting: SMD
Family: LVXT
Manufacturer series: LVXT
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP16
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| FGB3040G2-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
на замовлення 741 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 194.01 грн |
| 10+ | 161.90 грн |
| 100+ | 150.78 грн |
| 250+ | 149.99 грн |
| NCP130AMX180TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
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| NCP130BMX180TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
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| MC74HC1G00DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
на замовлення 1116 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.93 грн |
| 30+ | 13.57 грн |
| 100+ | 9.05 грн |
| 134+ | 6.98 грн |
| 368+ | 6.59 грн |
| MC74HC1G08DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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| MC74HC1G08DFT2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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| MC74HCT4851ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
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| MC74HCT4852ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
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| M74HCT4852ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
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| NTP125N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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| MC14503BDR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; buffer; hex
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; buffer; hex
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Number of channels: 6
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| MM74HCT574SJX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
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| NV25256DTHFT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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| NV25256DWHFT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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| NV25256MUW3VTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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| CAV25256VE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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| CAV25256YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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| BAS116LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 207 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.11 грн |
| 64+ | 6.27 грн |
| 92+ | 4.35 грн |
| 107+ | 3.73 грн |
| BAS116TT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| SBAS116LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
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| NSVBAS116LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
товару немає в наявності
В кошику
од. на суму грн.
| 1N5956BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
на замовлення 5386 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.97 грн |
| 50+ | 9.76 грн |
| 100+ | 9.13 грн |
| 111+ | 8.49 грн |
| 250+ | 8.25 грн |
| 304+ | 8.02 грн |
| 500+ | 7.78 грн |



















