| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 2SA2210-1E | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP Mounting: THT Collector current: 20A Power dissipation: 30W Collector-emitter voltage: 50V Current gain: 150...450 Frequency: 140MHz Polarisation: bipolar Case: TO220FP Type of transistor: PNP Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SA2210-EPN-1E | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP Mounting: THT Collector current: 20A Power dissipation: 2W Collector-emitter voltage: 50V Frequency: 140MHz Polarisation: bipolar Case: TO220FP Type of transistor: PNP Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSV2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Application: automotive industry Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65MQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65LQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 793nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65MQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 145nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL75T65SQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 136nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL75T65SQ | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL75T65SQDC | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2N5190G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 4A; 40W; TO225 Type of transistor: NPN Mounting: THT Case: TO225 Collector current: 4A Power dissipation: 40W Current gain: 25...100 Collector-emitter voltage: 40V Frequency: 2MHz Polarisation: bipolar Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM1117MPX-ADJNOPB | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM1117IMPX-ADJNOPB | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV8154MW120280TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Number of channels: 2 Case: DFN10 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NE521DR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT Kind of comparator: fast Kind of package: reel; tape Mounting: SMT Case: SO14 Operating temperature: 0...70°C Delay time: 8.2ns Input offset current: 1µA Input bias current: 7.5µA Input offset voltage: 7.5mV Number of comparators: 2 Operating voltage: 4.75...5.25/-4.75...-5.25V Type of integrated circuit: comparator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S2SC4617G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.125W Case: SC75; SOT416 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MELMUR1620CTG | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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MUN2211T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 5750 шт: термін постачання 21-30 дні (днів) |
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| MARSMMUN2211LT1G | ONSEMI |
Category: Unclassified Description: MARSMMUN2211LT1G |
на замовлення 18000 шт: термін постачання 21-30 дні (днів) |
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| SE5532AD8R2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape Type of integrated circuit: operational amplifier Integrated circuit features: low noise Case: SO8 Number of channels: dual Mounting: SMT Kind of package: reel; tape Operating temperature: -55...125°C Input offset current: 150nA Input bias current: 0.8µA Input offset voltage: 4mV Voltage supply range: ± 3...20V DC Slew rate: 9V/μs Bandwidth: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT4403M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT4403WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT5401LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 160000 шт: термін постачання 21-30 дні (днів) |
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| NCP1079BBP130G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1.05A Case: DIP8 Mounting: SMD Frequency: 117...143kHz Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 3.9Ω Operating voltage: 6.5...20V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVLJWD040N06CLTAG | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6 Type of transistor: N-MOSFET x2 Drain-source voltage: 60V Drain current: 18A Power dissipation: 12W Case: WDFNW6 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhancement Polarisation: unipolar Kind of package: reel; tape Pulsed drain current: 54A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GRUBSS138 | ONSEMI |
Category: Unclassified Description: GRUBSS138 |
на замовлення 474000 шт: термін постачання 21-30 дні (днів) |
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| MARBSS138LT1G | ONSEMI |
Category: Unclassified Description: MARBSS138LT1G |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| FAN7930CMX-G | ONSEMI |
Category: UnclassifiedDescription: FAN7930CMX-G |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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MM3Z10VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 6973 шт: термін постачання 21-30 дні (днів) |
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MM3Z12VST1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Semiconductor structure: single diode Type of diode: Zener Tolerance: ±2% Zener voltage: 12V |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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MM3Z18VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 1300 шт: термін постачання 21-30 дні (днів) |
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| NCV4949CDR2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1 Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SO8 Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV4949CPDR2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1 Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SO8 Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTH4L075N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HCT595ADTG | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; HCT; -55÷125°C; tube Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: tube Kind of output: 3-state Number of inputs: 5 |
на замовлення 268 шт: термін постачання 21-30 дні (днів) |
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MC74HCT595ADG | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; HCT; -55÷125°C; tube Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: tube Kind of output: 3-state Number of inputs: 5 |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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| MMBT4401M3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT4401WT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMMBT4401WT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BCP53-16T3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 28000 шт: термін постачання 21-30 дні (днів) |
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| VALSBCP53-16T1G | ONSEMI |
Category: Unclassified Description: VALSBCP53-16T1G |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| NSVMMBTH81LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBTA13 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMMBTA13LT1G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBTA13LT3G | ONSEMI |
Category: Transistors - UnclassifiedDescription: MMBTA13LT3G |
на замовлення 1660000 шт: термін постачання 21-30 дні (днів) |
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| NVMFD024N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 85A Power dissipation: 14W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMJS1D4N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 262A Pulsed drain current: 900A Power dissipation: 90W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMYS014N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 185A Power dissipation: 12W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS024N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 112A Power dissipation: 14W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMJST1D4N06CLTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 198A Pulsed drain current: 900A Power dissipation: 58W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 1.49mΩ Mounting: SMD Gate charge: 92.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRTS30120MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Mounting: SMD Max. off-state voltage: 120V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.73V Max. forward impulse current: 0.3kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVTS30120MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 120V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. load current: 60A Max. forward impulse current: 0.3kA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ4680T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 4µA Manufacturer series: MMSZ4xxT1G |
на замовлення 2929 шт: термін постачання 21-30 дні (днів) |
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FQD12N20LTM-F085 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NSBA114EDP6T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 269mW Case: SOT963 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Quantity in set/package: 8000pcs. Base-emitter resistor: 10kΩ Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74ACT541SC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: ACT |
на замовлення 1539 шт: термін постачання 21-30 дні (днів) |
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| FOD3120SV | ONSEMI |
Category: UnclassifiedDescription: FOD3120SV |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| FOD3120TSV | ONSEMI |
Category: Optocouplers - UnclassifiedDescription: FOD3120TSV |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| FOD3184SDV | ONSEMI |
Category: Optocouplers - UnclassifiedDescription: FOD3184SDV |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| GRUBAS40-04LT1G | ONSEMI |
Category: Unclassified Description: GRUBAS40-04LT1G |
на замовлення 21000 шт: термін постачання 21-30 дні (днів) |
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| 2SA2210-1E |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 30W
Collector-emitter voltage: 50V
Current gain: 150...450
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 30W
Collector-emitter voltage: 50V
Current gain: 150...450
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
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| 2SA2210-EPN-1E |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 2W
Collector-emitter voltage: 50V
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 2W
Collector-emitter voltage: 50V
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
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| NSV2SA2029M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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| FGHL75T65MQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
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| FGHL75T65LQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
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| FGHL75T65MQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
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| AFGHL75T65SQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
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| AFGHL75T65SQ |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| AFGHL75T65SQDC |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| 2N5190G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 4A; 40W; TO225
Type of transistor: NPN
Mounting: THT
Case: TO225
Collector current: 4A
Power dissipation: 40W
Current gain: 25...100
Collector-emitter voltage: 40V
Frequency: 2MHz
Polarisation: bipolar
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 4A; 40W; TO225
Type of transistor: NPN
Mounting: THT
Case: TO225
Collector current: 4A
Power dissipation: 40W
Current gain: 25...100
Collector-emitter voltage: 40V
Frequency: 2MHz
Polarisation: bipolar
Kind of package: bulk
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| LM1117MPX-ADJNOPB |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM1117IMPX-ADJNOPB |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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| NCV8154MW120280TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 2
Case: DFN10
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 2
Case: DFN10
Application: automotive industry
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| NE521DR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
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| S2SC4617G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.125W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.125W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
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| MELMUR1620CTG |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 67.52 грн |
| 500+ | 56.35 грн |
| MUN2211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 5750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.82 грн |
| 54+ | 7.46 грн |
| 60+ | 6.67 грн |
| 83+ | 4.81 грн |
| 92+ | 4.32 грн |
| 100+ | 4.00 грн |
| 500+ | 2.75 грн |
| 504+ | 1.86 грн |
| 1385+ | 1.75 грн |
| MARSMMUN2211LT1G |
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 1.04 грн |
| SE5532AD8R2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
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| MMBT4403M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MMBT4403WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MMBT5401LT3G |
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на замовлення 160000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.59 грн |
| NCP1079BBP130G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
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| NVLJWD040N06CLTAG |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 54A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 54A
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| GRUBSS138 |
на замовлення 474000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.26 грн |
| MARBSS138LT1G |
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.99 грн |
| FAN7930CMX-G |
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на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 39.74 грн |
| MM3Z10VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 6973 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 71+ | 5.63 грн |
| 100+ | 3.97 грн |
| 118+ | 3.38 грн |
| 500+ | 2.31 грн |
| 676+ | 1.37 грн |
| 1860+ | 1.30 грн |
| 6000+ | 1.29 грн |
| MM3Z12VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.31 грн |
| 90+ | 4.76 грн |
| MM3Z18VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 81+ | 4.92 грн |
| 148+ | 2.70 грн |
| 193+ | 2.06 грн |
| 265+ | 1.50 грн |
| 500+ | 1.21 грн |
| 1000+ | 1.10 грн |
| NCV4949CDR2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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| NCV4949CPDR2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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| NTH4L075N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| MC74HCT595ADTG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; HCT; -55÷125°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; HCT; -55÷125°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
на замовлення 268 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.92 грн |
| 10+ | 44.60 грн |
| 50+ | 33.65 грн |
| 96+ | 30.00 грн |
| 192+ | 29.36 грн |
| MC74HCT595ADG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; HCT; -55÷125°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; HCT; -55÷125°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.46 грн |
| 13+ | 32.30 грн |
| 14+ | 29.20 грн |
| 25+ | 26.43 грн |
| 48+ | 23.97 грн |
| MMBT4401M3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| MMBT4401WT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| NSVMMBT4401WT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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| BCP53-16T3G |
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на замовлення 28000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 10.08 грн |
| VALSBCP53-16T1G |
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 10.77 грн |
| NSVMMBTH81LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| MMBTA13 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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| SMMBTA13LT1G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
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| MMBTA13LT3G |
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на замовлення 1660000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.04 грн |
| NVMFD024N06CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS024N06CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMJS1D4N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMYS014N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS024N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMJST1D4N06CLTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NRTS30120MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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| NRVTS30120MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
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| MMSZ4680T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
на замовлення 2929 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 61+ | 6.51 грн |
| 70+ | 5.71 грн |
| 125+ | 3.19 грн |
| 424+ | 2.21 грн |
| 1000+ | 2.00 грн |
| FQD12N20LTM-F085 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NSBA114EDP6T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
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В кошику
од. на суму грн.
| 74ACT541SC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
на замовлення 1539 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.96 грн |
| 10+ | 65.08 грн |
| 25+ | 56.35 грн |
| 38+ | 52.85 грн |
| 114+ | 45.00 грн |
| 266+ | 39.84 грн |
| 532+ | 36.27 грн |
| 1064+ | 35.24 грн |
| FOD3120SV |
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на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 49.57 грн |
| FOD3120TSV |
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на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 49.57 грн |
| FOD3184SDV |
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на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 57.26 грн |
| GRUBAS40-04LT1G |
на замовлення 21000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.04 грн |








