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NVBG060N065SC1 ONSEMI nvbg060n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
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NTH4L060N065SC1 ONSEMI nth4l060n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
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NVH4L060N065SC1 ONSEMI nvh4l060n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
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74VHCT541AM ONSEMI 74vhct541a-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
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74VHCT541AMTCX 74VHCT541AMTCX ONSEMI 74vhct541a-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
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MC79L05ACPRMG MC79L05ACPRMG ONSEMI mc79l00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -5V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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MC79L05ACPRPG MC79L05ACPRPG ONSEMI mc79l00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -5V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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NCV78L12ABDR2G ONSEMI mc78l00a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV78L12ABPG NCV78L12ABPG ONSEMI mc78l00a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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MBRS3100T3G MBRS3100T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDF618AEB7AFA8&compId=MBRS3100T3G-DTE.PDF?ci_sign=145bc93234be1c10d8e80fe11007216d0eccf59a Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)
20+21.77 грн
27+15.45 грн
100+13.59 грн
250+12.37 грн
500+11.24 грн
1000+11.00 грн
Мінімальне замовлення: 20
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2N5684G ONSEMI 2n5684-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
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2N5686G ONSEMI 2n5684-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
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LMV358DR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual; 2
Case: SO8
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Voltage supply range: 2.7...5V DC
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
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LMV358DMR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Micro8; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual; 2
Case: Micro8
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Voltage supply range: 2.7...5V DC
Integrated circuit features: voltage feedback
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
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LM239DTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -25...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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2SC6082-1E ONSEMI ena0279-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 15A; 2W; TO220FP
Kind of package: tube
Mounting: THT
Type of transistor: NPN
Case: TO220FP
Power dissipation: 2W
Collector current: 15A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 195MHz
Polarisation: bipolar
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MMBT2907AM3T5G ONSEMI mmbt2907am3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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NSVMMBT2907AM3T5G ONSEMI mmbt2907am3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSVMMBT2907AWT1G ONSEMI mmbt2907awt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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MJD42CG MJD42CG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CEC9C51770143&compId=MJD42CG.pdf?ci_sign=1a8f178892c49420ed6d109178b866decda93cd9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
6+81.86 грн
10+43.10 грн
25+38.82 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MMBTA13LT1G MMBTA13LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81680E3F0EE469&compId=MMBTA13LT1G.PDF?ci_sign=d6e08d0938bccd5929d086596ffe7a89cabd7d6e Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
на замовлення 1160 шт:
термін постачання 21-30 дні (днів)
46+9.58 грн
61+6.71 грн
89+4.58 грн
105+3.86 грн
500+2.64 грн
1000+2.26 грн
Мінімальне замовлення: 46
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74AC32MTC 74AC32MTC ONSEMI 74ACT32-D.PDF FAIRS25842-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Family: AC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...6V DC
на замовлення 361 шт:
термін постачання 21-30 дні (днів)
24+18.55 грн
29+14.31 грн
96+11.48 грн
288+9.14 грн
Мінімальне замовлення: 24
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74AC32MTCX 74AC32MTCX ONSEMI 74ACT32-D.PDF Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
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74AC32SCX 74AC32SCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE047DAA6A200C7&compId=74AC32SC.pdf?ci_sign=71f9b6949affe7b4984def07d408da8e11fa6413 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
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MC74AC32DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628B91DD4E0D3&compId=MC74AC32-D.pdf?ci_sign=b31a971171383ca3fec4527535d375762963eba7 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MC74AC32DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628B91DD620D3&compId=MC74AC32-D.pdf?ci_sign=5fe07d9de6249540ff90d4f3610b2c27feaa1170 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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NTD18N06LT4G ONSEMI ntd18n06l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDP020N06B-F102 ONSEMI fdp020n06b-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3
Mounting: THT
Pulsed drain current: 1252A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 206nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 313A
Power dissipation: 333W
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NVB110N65S3F ONSEMI nvb110n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVHL110N65S3F ONSEMI nvhl110n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVHL110N65S3HF ONSEMI nvhl110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVMFWD024N06CT1G ONSEMI nvmfd024n06c-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Drain current: 24A
Drain-source voltage: 60V
Pulsed drain current: 85A
Case: DFN8
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MMBF4392LT1G MMBF4392LT1G ONSEMI MMBF439xLT1.PDF Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 1980 шт:
термін постачання 21-30 дні (днів)
18+25.26 грн
25+16.34 грн
50+12.29 грн
100+10.92 грн
500+8.25 грн
1000+7.60 грн
Мінімальне замовлення: 18
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BC550CBU BC550CBU ONSEMI BC550-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 9678 шт:
термін постачання 21-30 дні (днів)
39+11.32 грн
84+4.85 грн
100+4.33 грн
1000+3.71 грн
5000+3.51 грн
Мінімальне замовлення: 39
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J113 J113 ONSEMI mmbfj113-d.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Type of transistor: N-JFET
Mounting: THT
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 100Ω
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
27+16.55 грн
39+10.59 грн
100+9.38 грн
Мінімальне замовлення: 27
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BC858CDXV6T1G ONSEMI bc858cdxv6t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MB8S MB8S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD77C3A0DB29E28&compId=MB6S.pdf?ci_sign=010f7b669d2b1548d1b04ea604e8de8109664952 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1067 шт:
термін постачання 21-30 дні (днів)
12+37.45 грн
16+25.64 грн
18+23.45 грн
50+17.47 грн
100+14.80 грн
500+10.43 грн
1000+9.78 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
MBRD330G MBRD330G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AEA522E3EC4259&compId=MBRD320G.PDF?ci_sign=8984c5aff7e74ac8bed1e9172f9dadc953f2c9a9 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 30V; 3A; tube
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.625V
Load current: 3A
Max. load current: 6A
Max. off-state voltage: 30V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+435.44 грн
В кошику  од. на суму  грн.
FDD8896 FDD8896 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEA292F17CBE28&compId=FDD%2CFDU8896.pdf?ci_sign=e5d32e9da7e23b5cc474f425424b98e6ad294062 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
5+97.54 грн
6+71.33 грн
10+62.35 грн
50+45.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDD7N20TM FDD7N20TM ONSEMI fdd7n20tm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2479 шт:
термін постачання 21-30 дні (днів)
7+67.06 грн
10+46.42 грн
50+33.88 грн
100+29.76 грн
500+25.80 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJD42CRLG ONSEMI mjd41c-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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MJD42CT4G ONSEMI mjd41c-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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NCV333ASN2T1G ONSEMI ncs333-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; SOT23-5; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: zero-drift
Number of channels: single
Input bias current: 0.2nA
Input offset current: 400pA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
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NCV333ASQ3T2G ONSEMI ncs333-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; SC70-5; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SC70-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: zero-drift
Number of channels: single
Input bias current: 0.2nA
Input offset current: 400pA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
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VALNRVTSM260EV2T1G ONSEMI Category: Unclassified
Description: VALNRVTSM260EV2T1G
на замовлення 33000 шт:
термін постачання 21-30 дні (днів)
3000+11.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NVBG020N120SC1 ONSEMI nvbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVHL020N120SC1 ONSEMI nvhl020n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 267A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 267A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
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NVH4L020N120SC1 ONSEMI nvh4l020n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71.4A; Idm: 408A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71.4A
Pulsed drain current: 408A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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MC14027BDR2G MC14027BDR2G ONSEMI mc14027b-d.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Trigger: negative-edge-triggered
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LP2950ACDT-5.0G ONSEMI lp2950-d.pdf description Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Number of channels: 1
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LP2950ACDT-5RKG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2950CDT-3.0RKG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2950CZ-3.0RAG LP2950CZ-3.0RAG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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GRUMMBT3904WT1G ONSEMI Category: Unclassified
Description: GRUMMBT3904WT1G
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)
6000+1.13 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
VESSMMBT3904LT1G ONSEMI Category: Unclassified
Description: VESSMMBT3904LT1G
на замовлення 36000 шт:
термін постачання 21-30 дні (днів)
6000+1.25 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
GRUMC74HC14ADR2G ONSEMI Category: Unclassified
Description: GRUMC74HC14ADR2G
на замовлення 122500 шт:
термін постачання 21-30 дні (днів)
2500+10.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NSVMMBT5087LT1G ONSEMI mmbt5087lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
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CAT4016Y-T2 ONSEMI cat4016-d.pdf Category: LED drivers
Description: IC: driver; LED driver; 4-wire; TSSOP24; 100mA; Ch: 16; 3÷5.5VDC
Application: automotive industry
Output current: 0.1A
Supply voltage: 3...5.5V DC
Operating temperature: -40...125°C
Case: TSSOP24
Mounting: SMD
Kind of package: reel; tape
Maximum output current: 150mA
Number of channels: 16
Frequency: 25MHz
Kind of integrated circuit: LED driver
Interface: 4-wire
Type of integrated circuit: driver
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LM2904DMR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Number of channels: dual
Integrated circuit features: low power
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NCV2904DMR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Micro8; 3÷32VDC; reel,tape; 200nA
Number of channels: dual
Type of integrated circuit: operational amplifier
Case: Micro8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
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NVBG060N065SC1 nvbg060n065sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
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NTH4L060N065SC1 nth4l060n065sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
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NVH4L060N065SC1 nvh4l060n065sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
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74VHCT541AM 74vhct541a-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
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74VHCT541AMTCX 74vhct541a-d.pdf
74VHCT541AMTCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
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MC79L05ACPRMG mc79l00-d.pdf
MC79L05ACPRMG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -5V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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MC79L05ACPRPG mc79l00-d.pdf
MC79L05ACPRPG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -5V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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NCV78L12ABDR2G mc78l00a-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV78L12ABPG mc78l00a-d.pdf
NCV78L12ABPG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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MBRS3100T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDF618AEB7AFA8&compId=MBRS3100T3G-DTE.PDF?ci_sign=145bc93234be1c10d8e80fe11007216d0eccf59a
MBRS3100T3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.77 грн
27+15.45 грн
100+13.59 грн
250+12.37 грн
500+11.24 грн
1000+11.00 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
2N5684G 2n5684-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
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2N5686G 2n5684-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
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LMV358DR2G lmv321-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual; 2
Case: SO8
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Voltage supply range: 2.7...5V DC
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
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LMV358DMR2G lmv321-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Micro8; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual; 2
Case: Micro8
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Voltage supply range: 2.7...5V DC
Integrated circuit features: voltage feedback
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
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LM239DTBR2G lm339-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -25...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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2SC6082-1E ena0279-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 15A; 2W; TO220FP
Kind of package: tube
Mounting: THT
Type of transistor: NPN
Case: TO220FP
Power dissipation: 2W
Collector current: 15A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 195MHz
Polarisation: bipolar
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MMBT2907AM3T5G mmbt2907am3-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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NSVMMBT2907AM3T5G mmbt2907am3-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSVMMBT2907AWT1G mmbt2907awt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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MJD42CG pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CEC9C51770143&compId=MJD42CG.pdf?ci_sign=1a8f178892c49420ed6d109178b866decda93cd9
MJD42CG
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+81.86 грн
10+43.10 грн
25+38.82 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MMBTA13LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81680E3F0EE469&compId=MMBTA13LT1G.PDF?ci_sign=d6e08d0938bccd5929d086596ffe7a89cabd7d6e
MMBTA13LT1G
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
на замовлення 1160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.58 грн
61+6.71 грн
89+4.58 грн
105+3.86 грн
500+2.64 грн
1000+2.26 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
74AC32MTC 74ACT32-D.PDF FAIRS25842-1.pdf?t.download=true&u=5oefqw
74AC32MTC
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Family: AC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...6V DC
на замовлення 361 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+18.55 грн
29+14.31 грн
96+11.48 грн
288+9.14 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
74AC32MTCX 74ACT32-D.PDF
74AC32MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
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74AC32SCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE047DAA6A200C7&compId=74AC32SC.pdf?ci_sign=71f9b6949affe7b4984def07d408da8e11fa6413
74AC32SCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
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MC74AC32DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628B91DD4E0D3&compId=MC74AC32-D.pdf?ci_sign=b31a971171383ca3fec4527535d375762963eba7
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MC74AC32DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628B91DD620D3&compId=MC74AC32-D.pdf?ci_sign=5fe07d9de6249540ff90d4f3610b2c27feaa1170
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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NTD18N06LT4G ntd18n06l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDP020N06B-F102 fdp020n06b-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3
Mounting: THT
Pulsed drain current: 1252A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 206nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 313A
Power dissipation: 333W
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NVB110N65S3F nvb110n65s3f-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVHL110N65S3F nvhl110n65s3f-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVHL110N65S3HF nvhl110n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVMFWD024N06CT1G nvmfd024n06c-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Drain current: 24A
Drain-source voltage: 60V
Pulsed drain current: 85A
Case: DFN8
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MMBF4392LT1G MMBF439xLT1.PDF
MMBF4392LT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 1980 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.26 грн
25+16.34 грн
50+12.29 грн
100+10.92 грн
500+8.25 грн
1000+7.60 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BC550CBU BC550-D.PDF
BC550CBU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 9678 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.32 грн
84+4.85 грн
100+4.33 грн
1000+3.71 грн
5000+3.51 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
J113 mmbfj113-d.pdf
J113
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Type of transistor: N-JFET
Mounting: THT
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 100Ω
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.55 грн
39+10.59 грн
100+9.38 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BC858CDXV6T1G bc858cdxv6t1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MB8S pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD77C3A0DB29E28&compId=MB6S.pdf?ci_sign=010f7b669d2b1548d1b04ea604e8de8109664952
MB8S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1067 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.45 грн
16+25.64 грн
18+23.45 грн
50+17.47 грн
100+14.80 грн
500+10.43 грн
1000+9.78 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
MBRD330G pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AEA522E3EC4259&compId=MBRD320G.PDF?ci_sign=8984c5aff7e74ac8bed1e9172f9dadc953f2c9a9
MBRD330G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 30V; 3A; tube
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.625V
Load current: 3A
Max. load current: 6A
Max. off-state voltage: 30V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+435.44 грн
В кошику  од. на суму  грн.
FDD8896 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEA292F17CBE28&compId=FDD%2CFDU8896.pdf?ci_sign=e5d32e9da7e23b5cc474f425424b98e6ad294062
FDD8896
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+97.54 грн
6+71.33 грн
10+62.35 грн
50+45.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDD7N20TM fdd7n20tm-d.pdf
FDD7N20TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2479 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.06 грн
10+46.42 грн
50+33.88 грн
100+29.76 грн
500+25.80 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJD42CRLG mjd41c-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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MJD42CT4G mjd41c-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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NCV333ASN2T1G ncs333-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; SOT23-5; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: zero-drift
Number of channels: single
Input bias current: 0.2nA
Input offset current: 400pA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
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NCV333ASQ3T2G ncs333-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; SC70-5; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SC70-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: zero-drift
Number of channels: single
Input bias current: 0.2nA
Input offset current: 400pA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
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VALNRVTSM260EV2T1G
Виробник: ONSEMI
Category: Unclassified
Description: VALNRVTSM260EV2T1G
на замовлення 33000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+11.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NVBG020N120SC1 nvbg020n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVHL020N120SC1 nvhl020n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 267A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 267A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
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NVH4L020N120SC1 nvh4l020n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71.4A; Idm: 408A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71.4A
Pulsed drain current: 408A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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MC14027BDR2G mc14027b-d.pdf
MC14027BDR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Trigger: negative-edge-triggered
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LP2950ACDT-5.0G description lp2950-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Number of channels: 1
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LP2950ACDT-5RKG lp2950-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2950CDT-3.0RKG lp2950-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2950CZ-3.0RAG lp2950-d.pdf
LP2950CZ-3.0RAG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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GRUMMBT3904WT1G
Виробник: ONSEMI
Category: Unclassified
Description: GRUMMBT3904WT1G
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6000+1.13 грн
Мінімальне замовлення: 6000
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VESSMMBT3904LT1G
Виробник: ONSEMI
Category: Unclassified
Description: VESSMMBT3904LT1G
на замовлення 36000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6000+1.25 грн
Мінімальне замовлення: 6000
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GRUMC74HC14ADR2G
Виробник: ONSEMI
Category: Unclassified
Description: GRUMC74HC14ADR2G
на замовлення 122500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+10.45 грн
Мінімальне замовлення: 2500
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NSVMMBT5087LT1G mmbt5087lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
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CAT4016Y-T2 cat4016-d.pdf
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; 4-wire; TSSOP24; 100mA; Ch: 16; 3÷5.5VDC
Application: automotive industry
Output current: 0.1A
Supply voltage: 3...5.5V DC
Operating temperature: -40...125°C
Case: TSSOP24
Mounting: SMD
Kind of package: reel; tape
Maximum output current: 150mA
Number of channels: 16
Frequency: 25MHz
Kind of integrated circuit: LED driver
Interface: 4-wire
Type of integrated circuit: driver
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LM2904DMR2G lm358-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Number of channels: dual
Integrated circuit features: low power
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NCV2904DMR2G lm358-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Micro8; 3÷32VDC; reel,tape; 200nA
Number of channels: dual
Type of integrated circuit: operational amplifier
Case: Micro8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
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