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2N5550TAR 2N5550TAR ONSEMI 2N5550-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
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2N5401YBU 2N5401YBU ONSEMI 2N5401-D.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
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LP2951ACD-3.0R2G LP2951ACD-3.0R2G ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2951ACDM-3.0RG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2951ACDMR2G ONSEMI lp2950-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NSVBC857CWT1G NSVBC857CWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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TIP35AG ONSEMI tip35a-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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LM258DMR2G LM258DMR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -25...85°C
Kind of package: reel; tape
Input offset voltage: 7mV
Input offset current: 100nA
на замовлення 3890 шт:
термін постачання 14-30 дні (днів)
30+15.08 грн
36+11.69 грн
39+10.71 грн
44+9.39 грн
100+7.99 грн
250+7.33 грн
500+7.00 грн
1000+6.75 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
FCP11N60F FCP11N60F ONSEMI FCP11N60F-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 125W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 33A
Gate charge: 40nC
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MMBT5401M3T5G MMBT5401M3T5G ONSEMI mmbt5401m3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MMBT5401WT1G MMBT5401WT1G ONSEMI mmbt5401w-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NSVMMBT5401M3T5G NSVMMBT5401M3T5G ONSEMI mmbt5401m3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVMMBT5401WT1G NSVMMBT5401WT1G ONSEMI mmbt5401w-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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LM2903EDR2G ONSEMI lm393-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Number of comparators: 2
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
Case: SO8
Operating voltage: 2...36V
Kind of comparator: universal
Mounting: SMT
Input offset voltage: 7mV
Type of integrated circuit: comparator
Operating temperature: -40...105°C
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LM2903DMR2G ONSEMI lm393-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape
Number of comparators: 2
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
Case: Micro8
Operating voltage: 2...36V
Kind of comparator: universal
Mounting: SMT
Input offset voltage: 7mV
Type of integrated circuit: comparator
Operating temperature: -40...105°C
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MMBT5551M3T5G ONSEMI mmbt5551m3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 60mA
Power dissipation: 0.64W
Case: SOT723
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
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NSVMMBT5551M3T5G ONSEMI mmbt5551m3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 60mA
Power dissipation: 0.64W
Case: SOT723
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NSVMMBT2222AM3T5G ONSEMI mmbt2222am3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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NSVMMBT2222ATT1G ONSEMI mmbt2222att1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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BC846BDW1T1G BC846BDW1T1G ONSEMI BC846BDW1T1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 8275 шт:
термін постачання 14-30 дні (днів)
36+12.42 грн
53+7.91 грн
64+6.49 грн
75+5.55 грн
100+4.72 грн
500+3.17 грн
1000+2.64 грн
1500+2.36 грн
3000+1.94 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
TIP41BG TIP41BG ONSEMI tip41a-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
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BC33725TAR BC33725TAR ONSEMI BC337-FSC-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: Ammo Pack
Frequency: 210MHz
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LM324ADTBR2G LM324ADTBR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 5mV
Operating temperature: 0...70°C
Kind of package: reel; tape
Input offset current: 75nA
Case: TSSOP14
Number of channels: quad; 4
Bandwidth: 1.2MHz
Mounting: SMT
Input offset voltage: 5mV
Type of integrated circuit: operational amplifier
Voltage supply range: ± 1.5...15V DC; 3...30V DC
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LM324DTBR2G LM324DTBR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 9mV
Operating temperature: 0...70°C
Kind of package: reel; tape
Input offset current: 150nA
Case: TSSOP14
Number of channels: quad; 4
Bandwidth: 1.2MHz
Mounting: SMT
Input offset voltage: 9mV
Type of integrated circuit: operational amplifier
Voltage supply range: ± 1.5...15V DC; 3...30V DC
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LM324EDR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; SO14
Operating temperature: 0...70°C
Kind of package: reel; tape
Input offset current: 150nA
Case: SO14
Number of channels: quad; 4
Bandwidth: 1.2MHz
Mounting: SMT
Input offset voltage: 9mV
Type of integrated circuit: operational amplifier
Voltage supply range: ± 1.5...15V DC; 3...30V DC
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MC33063AVDR2G MC33063AVDR2G ONSEMI mc34063a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
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2N3904TA 2N3904TA ONSEMI 2N3904-D.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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2N3904TF 2N3904TF ONSEMI 2N3904-D.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
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2N3904TAR 2N3904TAR ONSEMI 2N3904-D.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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LM2901VDTBR2G LM2901VDTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901DTBR2G LM2901DTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901EDR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901VDR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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FCP260N60E FCP260N60E ONSEMI FCPF260N60E-D.PDF FAIR-S-A0002365478-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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FCPF260N60E FCPF260N60E ONSEMI FCPF260N60E-D.PDF fcpf260n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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NCV78L15ABDR2G NCV78L15ABDR2G ONSEMI mc78l00a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FCP7N60 FCP7N60 ONSEMI FCPF7N60-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
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FCA47N60F ONSEMI FCA47N60F-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
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FDMQ8205A ONSEMI fdmq8205a-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Power dissipation: 2.5W
Case: WDFN12
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 51/147mΩ
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 100V
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FCP260N65S3 FCP260N65S3 ONSEMI FCP260N65S3-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 24nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
3+214.64 грн
10+133.42 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FCP360N65S3R0 FCP360N65S3R0 ONSEMI FCP360N65S3R0-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 18nC
On-state resistance: 0.36Ω
Pulsed drain current: 25A
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NVD260N65S3T4G NVD260N65S3T4G ONSEMI nvd260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 23.5nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
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NVD360N65S3T4G NVD360N65S3T4G ONSEMI nvd360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 16.8nC
On-state resistance: 0.36Ω
Pulsed drain current: 25A
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MC33204DTBR2G ONSEMI mc33201-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: quad; 4
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
на замовлення 2324 шт:
термін постачання 14-30 дні (днів)
19+23.95 грн
23+18.37 грн
25+16.80 грн
50+16.14 грн
100+15.57 грн
250+14.91 грн
500+14.41 грн
1000+13.92 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
PN2222ATFR PN2222ATFR ONSEMI pn2222a-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
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LM337BD2TR4G LM337BD2TR4G ONSEMI lm337-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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LM337BTG LM337BTG ONSEMI lm337-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
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LM337D2TR4G LM337D2TR4G ONSEMI lm337-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
на замовлення 630 шт:
термін постачання 14-30 дні (днів)
8+56.76 грн
11+39.53 грн
25+34.10 грн
50+31.13 грн
100+29.32 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
NSVBCP53-16T3G NSVBCP53-16T3G ONSEMI bcp53t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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NVBG025N065SC1 ONSEMI nvbg025n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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BC848CDW1T1G BC848CDW1T1G ONSEMI BC846BDW1T1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
36+12.42 грн
46+9.06 грн
54+7.74 грн
100+4.74 грн
200+4.22 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
FCP110N65F FCP110N65F ONSEMI FCP110N65F-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
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MMBT3904TT1G ONSEMI mmbt3904tt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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NCV78L12ABDR2G NCV78L12ABDR2G ONSEMI mc78l00a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV78L12ABPG NCV78L12ABPG ONSEMI mc78l00a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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LMV358DR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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LMV358DMR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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MMBT2907AM3T5G MMBT2907AM3T5G ONSEMI mmbt2907am3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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NSVMMBT2907AM3T5G NSVMMBT2907AM3T5G ONSEMI mmbt2907am3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSVMMBT2907AWT1G NSVMMBT2907AWT1G ONSEMI mmbt2907awt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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2N5550TAR 2N5550-D.PDF
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
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2N5401YBU 2N5401-D.PDF
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
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LP2951ACD-3.0R2G lp2950-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2951ACDM-3.0RG lp2950-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2951ACDMR2G lp2950-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NSVBC857CWT1G bc856bwt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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TIP35AG tip35a-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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LM258DMR2G lm358-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -25...85°C
Kind of package: reel; tape
Input offset voltage: 7mV
Input offset current: 100nA
на замовлення 3890 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.08 грн
36+11.69 грн
39+10.71 грн
44+9.39 грн
100+7.99 грн
250+7.33 грн
500+7.00 грн
1000+6.75 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
FCP11N60F FCP11N60F-D.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 125W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 33A
Gate charge: 40nC
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MMBT5401M3T5G mmbt5401m3-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MMBT5401WT1G mmbt5401w-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NSVMMBT5401M3T5G mmbt5401m3-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVMMBT5401WT1G mmbt5401w-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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LM2903EDR2G lm393-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Number of comparators: 2
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
Case: SO8
Operating voltage: 2...36V
Kind of comparator: universal
Mounting: SMT
Input offset voltage: 7mV
Type of integrated circuit: comparator
Operating temperature: -40...105°C
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LM2903DMR2G lm393-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape
Number of comparators: 2
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
Case: Micro8
Operating voltage: 2...36V
Kind of comparator: universal
Mounting: SMT
Input offset voltage: 7mV
Type of integrated circuit: comparator
Operating temperature: -40...105°C
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MMBT5551M3T5G mmbt5551m3-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 60mA
Power dissipation: 0.64W
Case: SOT723
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
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NSVMMBT5551M3T5G mmbt5551m3-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 60mA
Power dissipation: 0.64W
Case: SOT723
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NSVMMBT2222AM3T5G mmbt2222am3-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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NSVMMBT2222ATT1G mmbt2222att1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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BC846BDW1T1G BC846BDW1T1-D.PDF
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 8275 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.42 грн
53+7.91 грн
64+6.49 грн
75+5.55 грн
100+4.72 грн
500+3.17 грн
1000+2.64 грн
1500+2.36 грн
3000+1.94 грн
Мінімальне замовлення: 36 шт
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TIP41BG tip41a-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
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BC33725TAR BC337-FSC-D.PDF
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: Ammo Pack
Frequency: 210MHz
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LM324ADTBR2G lm324-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 5mV
Operating temperature: 0...70°C
Kind of package: reel; tape
Input offset current: 75nA
Case: TSSOP14
Number of channels: quad; 4
Bandwidth: 1.2MHz
Mounting: SMT
Input offset voltage: 5mV
Type of integrated circuit: operational amplifier
Voltage supply range: ± 1.5...15V DC; 3...30V DC
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LM324DTBR2G lm324-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 9mV
Operating temperature: 0...70°C
Kind of package: reel; tape
Input offset current: 150nA
Case: TSSOP14
Number of channels: quad; 4
Bandwidth: 1.2MHz
Mounting: SMT
Input offset voltage: 9mV
Type of integrated circuit: operational amplifier
Voltage supply range: ± 1.5...15V DC; 3...30V DC
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LM324EDR2G lm324-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; SO14
Operating temperature: 0...70°C
Kind of package: reel; tape
Input offset current: 150nA
Case: SO14
Number of channels: quad; 4
Bandwidth: 1.2MHz
Mounting: SMT
Input offset voltage: 9mV
Type of integrated circuit: operational amplifier
Voltage supply range: ± 1.5...15V DC; 3...30V DC
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MC33063AVDR2G mc34063a-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
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2N3904TA 2N3904-D.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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2N3904TF 2N3904-D.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
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2N3904TAR 2N3904-D.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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LM2901VDTBR2G lm339-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901DTBR2G lm339-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901EDR2G lm339-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901VDR2G lm339-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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FCP260N60E FCPF260N60E-D.PDF FAIR-S-A0002365478-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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FCPF260N60E FCPF260N60E-D.PDF fcpf260n60e-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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NCV78L15ABDR2G mc78l00a-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FCP7N60 FCPF7N60-D.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
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FCA47N60F FCA47N60F-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
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FDMQ8205A fdmq8205a-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Power dissipation: 2.5W
Case: WDFN12
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 51/147mΩ
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 100V
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FCP260N65S3 FCP260N65S3-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 24nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+214.64 грн
10+133.42 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FCP360N65S3R0 FCP360N65S3R0-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 18nC
On-state resistance: 0.36Ω
Pulsed drain current: 25A
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NVD260N65S3T4G nvd260n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 23.5nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
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NVD360N65S3T4G nvd360n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 16.8nC
On-state resistance: 0.36Ω
Pulsed drain current: 25A
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MC33204DTBR2G mc33201-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: quad; 4
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
на замовлення 2324 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
19+23.95 грн
23+18.37 грн
25+16.80 грн
50+16.14 грн
100+15.57 грн
250+14.91 грн
500+14.41 грн
1000+13.92 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
PN2222ATFR pn2222a-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
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LM337BD2TR4G lm337-d.pdf
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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LM337BTG lm337-d.pdf
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
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LM337D2TR4G lm337-d.pdf
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
на замовлення 630 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+56.76 грн
11+39.53 грн
25+34.10 грн
50+31.13 грн
100+29.32 грн
Мінімальне замовлення: 8 шт
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NSVBCP53-16T3G bcp53t1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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NVBG025N065SC1 nvbg025n065sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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BC848CDW1T1G BC846BDW1T1-D.PDF
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.42 грн
46+9.06 грн
54+7.74 грн
100+4.74 грн
200+4.22 грн
Мінімальне замовлення: 36 шт
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FCP110N65F FCP110N65F-D.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
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MMBT3904TT1G mmbt3904tt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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NCV78L12ABDR2G mc78l00a-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV78L12ABPG mc78l00a-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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LMV358DR2G lmv321-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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LMV358DMR2G lmv321-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
товару немає в наявності
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MMBT2907AM3T5G mmbt2907am3-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товару немає в наявності
В кошику  од. на суму  грн.
NSVMMBT2907AM3T5G mmbt2907am3-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSVMMBT2907AWT1G mmbt2907awt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
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