| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NCS210RSQT2G | ONSEMI |
 Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Bandwidth: 40kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.2...26V DC Case: SC70-6 Operating temperature: -40...125°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail output Gain: 200V/V Input offset voltage: 35µV Kind of package: reel; tape Input bias current: 60µA Input offset current: 100nA |
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В кошику од. на суму грн. | |||||||||||||||||
| NCV21671SQ025T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 1.8÷5.5VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Bandwidth: 40kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: SC70-6 Operating temperature: -40...125°C Slew rate: 0.3V/μs Integrated circuit features: rail-to-rail output Gain: 25V/V Input offset voltage: 0.019mV Kind of package: reel; tape Input bias current: 35µA Input offset current: 300nA |
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В кошику од. на суму грн. | |||||||||||||||||
| NCV21671SQ050T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 1.8÷5.5VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Bandwidth: 40kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: SC70-6 Operating temperature: -40...125°C Slew rate: 0.3V/μs Integrated circuit features: rail-to-rail output Gain: 50V/V Input offset voltage: 12µV Kind of package: reel; tape Input bias current: 35µA Input offset current: 300nA |
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В кошику од. на суму грн. | |||||||||||||||||
| NCS199A3RSQT2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Bandwidth: 40kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.2...26V DC Case: SC70-6 Operating temperature: -40...125°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail output Gain: 200V/V Input offset voltage: 0.15mV Kind of package: reel; tape Input bias current: 60µA Input offset current: 100nA |
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В кошику од. на суму грн. | |||||||||||||||||
| 1N4933G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Case: CASE59-10; DO41 Mounting: THT Features of semiconductor devices: fast switching Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 200ns Load current: 1A Max. forward voltage: 1.2V Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: bulk |
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В кошику од. на суму грн. | |||||||||||||||||
| 1N4933RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns Case: DO41 Mounting: THT Features of semiconductor devices: fast switching Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 300ns Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
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FDA24N40F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 13.8A Pulsed drain current: 92A Power dissipation: 235W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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| 2SA1593S-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK Mounting: SMD Collector current: 2A Power dissipation: 1W Collector-emitter voltage: 100V Current gain: 140...280 Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| 2SA1593T-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK Mounting: SMD Collector current: 2A Power dissipation: 1W Collector-emitter voltage: 100V Current gain: 200...400 Frequency: 120MHz Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| SMF05T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; SC88A; Ch: 4; ESD Type of diode: TVS array Breakdown voltage: 6...7.2V Max. forward impulse current: 1A Peak pulse power dissipation: 0.2kW Semiconductor structure: common anode Mounting: SMD Case: SC88A Max. off-state voltage: 5V Leakage current: 5µA Number of channels: 4 Kind of package: reel; tape Version: ESD |
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В кошику од. на суму грн. | |||||||||||||||||
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MMUN2111LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
на замовлення 4607 шт: термін постачання 14-30 дні (днів) |
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SMMUN2111LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 1520 шт: термін постачання 14-30 дні (днів) |
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MMUN2111LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMUN2111LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SZBZX84C12LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener Type of diode: Zener |
на замовлення 20000 шт: термін постачання 14-30 дні (днів) |
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| MC34151DR2G | ONSEMI |
Category: Gates, inverters Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOIC8 Output current: -1.5...1.5A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 14ns Pulse fall time: 16ns Maximum output current: 1.5A Supply voltage: 6.5...18V Kind of output: MOSFET driver Power dissipation: 0.56W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBPC3501 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
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В кошику од. на суму грн. | |||||||||||||||||
| GBPC3506W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
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В кошику од. на суму грн. | |||||||||||||||||
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1N5242B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 2905 шт: термін постачання 14-30 дні (днів) |
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1N5242BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 840 шт: термін постачання 14-30 дні (днів) |
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| 1N5247BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 17V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 17V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5240BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5243B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5243BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5240B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5241BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5242B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5244B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 14V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5244BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 14V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5246BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 16V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5249BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 19V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 19V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NST489AMT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6 Mounting: SMD Case: TSOP6 Type of transistor: NPN Kind of package: reel; tape Power dissipation: 0.535W Collector current: 2A Collector-emitter voltage: 30V Current gain: 300...900 Frequency: 200MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FMBA14 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN x2 Collector current: 1.2A Power dissipation: 0.7W Collector-emitter voltage: 30V Frequency: 1.25MHz Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 1423 шт: термін постачання 14-30 дні (днів) |
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| NSBA144EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA143EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963 Case: SOT963 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 269mW Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA143EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA143EF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA143TDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 160...250 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA143TF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 160...250 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA144EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ Case: SOT963 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 269mW Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA144TF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 120...250 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA144WDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 47kΩ Base-emitter resistor: 22kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBA144WF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Base-emitter resistor: 22kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NRVBA140NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.74V Max. forward impulse current: 30A Kind of package: reel; tape Max. load current: 2A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS31 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Capacitance: 35pF Reverse recovery time: 50ns Case: SOT23 Max. forward impulse current: 2A Load current: 0.2A Power dissipation: 0.35W Semiconductor structure: double series Max. forward voltage: 1.25V Max. off-state voltage: 120V Kind of package: reel; tape Type of diode: switching |
на замовлення 242 шт: термін постачання 14-30 дні (днів) |
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BAS35 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Capacitance: 35pF Reverse recovery time: 50ns Case: SOT23 Max. forward impulse current: 2A Load current: 0.2A Power dissipation: 0.35W Semiconductor structure: common anode; double Max. forward voltage: 1.25V Max. off-state voltage: 120V Kind of package: reel; tape Type of diode: switching |
на замовлення 461 шт: термін постачання 14-30 дні (днів) |
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| BAS31-D87Z | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 200mA; 50ns; SOT23; Ufmax: 1V Mounting: SMD Reverse recovery time: 50ns Case: SOT23 Max. forward impulse current: 0.2A Load current: 0.2A Max. forward voltage: 1V Max. off-state voltage: 120V Type of diode: switching |
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 |
MC74HC540ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: HC Technology: CMOS; TTL Kind of output: 3-state Quiescent current: 160µA Supply voltage: 2...6V DC Number of channels: 8 |
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| MC74HC540ADWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: SO20-W Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: HC Technology: CMOS; TTL Kind of output: 3-state Quiescent current: 160µA Supply voltage: 2...6V DC Number of channels: 8 |
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|
|
MM74HC540MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: tube Manufacturer series: HC Technology: CMOS Kind of output: 3-state Quiescent current: 160µA Supply voltage: 2...6V DC Number of channels: 8 |
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|
|
MM74HC540MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: HC Technology: CMOS Kind of output: 3-state Quiescent current: 160µA Supply voltage: 2...6V DC Number of channels: 8 |
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 |
MJE15030 | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
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|
|
MJE15030G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
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В кошику од. на суму грн. | ||||||||||||||||
 |
MC14066BDR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO16; 3÷18VDC Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Quiescent current: 30µA Number of inputs: 4 Kind of package: reel; tape Technology: CMOS Number of channels: 4 |
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|
|
MC14060BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: 14bit; binary counter; oscillator Mounting: SMD Case: SO16 Technology: CMOS Family: HEF4000B |
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В кошику од. на суму грн. | ||||||||||||||||
| MC14067BDWG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: multiplexer; demultiplexer,multiplexer; 16: 1; Ch: 1; SOIC14 Kind of integrated circuit: demultiplexer; multiplexer Type of integrated circuit: multiplexer Case: SOIC14 Technology: CMOS Kind of output: CMOS; logic Mounting: SMD Operating temperature: -55...125°C Quiescent current: 600µA Number of channels: 1 Supply voltage: 3...18V Output configuration: 16:1 |
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В кошику од. на суму грн. | |||||||||||||||||
| MC14060BDTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS Type of integrated circuit: digital Kind of integrated circuit: 14bit; binary counter; oscillator Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Number of inputs: 4 Kind of package: reel; tape Technology: CMOS Family: HEF4000B Number of channels: 1 |
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 |
MC14066BDTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; TSSOP14 Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 3...18V DC Number of inputs: 4 Kind of package: reel; tape Technology: CMOS Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC14067BDWR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: multiplexer; demultiplexer,multiplexer; 16: 1; Ch: 1; SOIC14 Kind of integrated circuit: demultiplexer; multiplexer Type of integrated circuit: multiplexer Case: SOIC14 Technology: CMOS Kind of output: CMOS; logic Mounting: SMD Operating temperature: -55...125°C Quiescent current: 600µA Number of channels: 1 Supply voltage: 3...18V Output configuration: 16:1 |
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В кошику од. на суму грн. | |||||||||||||||||
| NCP1342AMAACD1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO9; flyback; 9÷28VDC Type of integrated circuit: PMIC Output current: -500...800mA Mounting: SMD Case: SO9 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V DC |
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В кошику од. на суму грн. |
| NCS210RSQT2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
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| NCV21671SQ025T2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 1.8÷5.5VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: rail-to-rail output
Gain: 25V/V
Input offset voltage: 0.019mV
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 1.8÷5.5VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: rail-to-rail output
Gain: 25V/V
Input offset voltage: 0.019mV
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
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| NCV21671SQ050T2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 1.8÷5.5VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: rail-to-rail output
Gain: 50V/V
Input offset voltage: 12µV
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 1.8÷5.5VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Integrated circuit features: rail-to-rail output
Gain: 50V/V
Input offset voltage: 12µV
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
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| NCS199A3RSQT2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
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| 1N4933G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Mounting: THT
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: bulk
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Mounting: THT
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: bulk
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| 1N4933RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Case: DO41
Mounting: THT
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Case: DO41
Mounting: THT
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
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| FDA24N40F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 13.8A
Pulsed drain current: 92A
Power dissipation: 235W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 13.8A
Pulsed drain current: 92A
Power dissipation: 235W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 13 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 263.92 грн |
| 10+ | 218.21 грн |
| 2SA1593S-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 140...280
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 140...280
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA1593T-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 120MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 120MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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| SMF05T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; SC88A; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6...7.2V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; SC88A; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6...7.2V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Version: ESD
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| MMUN2111LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
на замовлення 4607 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.04 грн |
| 73+ | 5.79 грн |
| 106+ | 3.98 грн |
| 125+ | 3.37 грн |
| 250+ | 2.70 грн |
| 500+ | 2.29 грн |
| 1000+ | 1.95 грн |
| 3000+ | 1.51 грн |
| SMMUN2111LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 1520 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.94 грн |
| 69+ | 6.13 грн |
| 116+ | 3.63 грн |
| 500+ | 2.94 грн |
| MMUN2111LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
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| SMMUN2111LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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| SZBZX84C12LT3G |
|
на замовлення 20000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.57 грн |
| MC34151DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Maximum output current: 1.5A
Supply voltage: 6.5...18V
Kind of output: MOSFET driver
Power dissipation: 0.56W
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Maximum output current: 1.5A
Supply voltage: 6.5...18V
Kind of output: MOSFET driver
Power dissipation: 0.56W
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| GBPC3501 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| GBPC3506W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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| 1N5242B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 2905 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 157+ | 2.69 грн |
| 252+ | 1.67 грн |
| 295+ | 1.43 грн |
| 500+ | 1.37 грн |
| 1N5242BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 840 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 100+ | 4.20 грн |
| 120+ | 3.52 грн |
| 163+ | 2.58 грн |
| 246+ | 1.71 грн |
| 286+ | 1.47 грн |
| 500+ | 1.37 грн |
| 1N5247BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 17V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 17V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5240BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5243B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5243BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5240B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5241BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5242B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5244B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5244BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5246BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5249BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 19V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 19V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| NST489AMT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 0.535W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 0.535W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
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| FMBA14 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 1.2A
Power dissipation: 0.7W
Collector-emitter voltage: 30V
Frequency: 1.25MHz
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 1.2A
Power dissipation: 0.7W
Collector-emitter voltage: 30V
Frequency: 1.25MHz
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 1423 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 120+ | 3.80 грн |
| 121+ | 3.49 грн |
| NSBA144EDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143EDP6T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143EDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143EF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143TDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143TF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144EDP6T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144TF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 120...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 120...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144WDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144WF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NRVBA140NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
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| BAS31 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Capacitance: 35pF
Reverse recovery time: 50ns
Case: SOT23
Max. forward impulse current: 2A
Load current: 0.2A
Power dissipation: 0.35W
Semiconductor structure: double series
Max. forward voltage: 1.25V
Max. off-state voltage: 120V
Kind of package: reel; tape
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Capacitance: 35pF
Reverse recovery time: 50ns
Case: SOT23
Max. forward impulse current: 2A
Load current: 0.2A
Power dissipation: 0.35W
Semiconductor structure: double series
Max. forward voltage: 1.25V
Max. off-state voltage: 120V
Kind of package: reel; tape
Type of diode: switching
на замовлення 242 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.88 грн |
| 36+ | 11.75 грн |
| 41+ | 10.41 грн |
| 50+ | 8.90 грн |
| 100+ | 6.13 грн |
| BAS35 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Capacitance: 35pF
Reverse recovery time: 50ns
Case: SOT23
Max. forward impulse current: 2A
Load current: 0.2A
Power dissipation: 0.35W
Semiconductor structure: common anode; double
Max. forward voltage: 1.25V
Max. off-state voltage: 120V
Kind of package: reel; tape
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Capacitance: 35pF
Reverse recovery time: 50ns
Case: SOT23
Max. forward impulse current: 2A
Load current: 0.2A
Power dissipation: 0.35W
Semiconductor structure: common anode; double
Max. forward voltage: 1.25V
Max. off-state voltage: 120V
Kind of package: reel; tape
Type of diode: switching
на замовлення 461 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 44+ | 9.74 грн |
| 46+ | 9.15 грн |
| 50+ | 8.48 грн |
| 100+ | 7.64 грн |
| 250+ | 7.55 грн |
| BAS31-D87Z |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 200mA; 50ns; SOT23; Ufmax: 1V
Mounting: SMD
Reverse recovery time: 50ns
Case: SOT23
Max. forward impulse current: 0.2A
Load current: 0.2A
Max. forward voltage: 1V
Max. off-state voltage: 120V
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 200mA; 50ns; SOT23; Ufmax: 1V
Mounting: SMD
Reverse recovery time: 50ns
Case: SOT23
Max. forward impulse current: 0.2A
Load current: 0.2A
Max. forward voltage: 1V
Max. off-state voltage: 120V
Type of diode: switching
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| MC74HC540ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS; TTL
Kind of output: 3-state
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS; TTL
Kind of output: 3-state
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
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| MC74HC540ADWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS; TTL
Kind of output: 3-state
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS; TTL
Kind of output: 3-state
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
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| MM74HC540MTC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: HC
Technology: CMOS
Kind of output: 3-state
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: HC
Technology: CMOS
Kind of output: 3-state
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
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| MM74HC540MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Kind of output: 3-state
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Kind of output: 3-state
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
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| MJE15030 |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| MJE15030G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| MC14066BDR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Quiescent current: 30µA
Number of inputs: 4
Kind of package: reel; tape
Technology: CMOS
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Quiescent current: 30µA
Number of inputs: 4
Kind of package: reel; tape
Technology: CMOS
Number of channels: 4
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| MC14060BDR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Mounting: SMD
Case: SO16
Technology: CMOS
Family: HEF4000B
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Mounting: SMD
Case: SO16
Technology: CMOS
Family: HEF4000B
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| MC14067BDWG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 16: 1; Ch: 1; SOIC14
Kind of integrated circuit: demultiplexer; multiplexer
Type of integrated circuit: multiplexer
Case: SOIC14
Technology: CMOS
Kind of output: CMOS; logic
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 600µA
Number of channels: 1
Supply voltage: 3...18V
Output configuration: 16:1
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 16: 1; Ch: 1; SOIC14
Kind of integrated circuit: demultiplexer; multiplexer
Type of integrated circuit: multiplexer
Case: SOIC14
Technology: CMOS
Kind of output: CMOS; logic
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 600µA
Number of channels: 1
Supply voltage: 3...18V
Output configuration: 16:1
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| MC14060BDTR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Number of inputs: 4
Kind of package: reel; tape
Technology: CMOS
Family: HEF4000B
Number of channels: 1
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Number of inputs: 4
Kind of package: reel; tape
Technology: CMOS
Family: HEF4000B
Number of channels: 1
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| MC14066BDTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; TSSOP14
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Number of inputs: 4
Kind of package: reel; tape
Technology: CMOS
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; TSSOP14
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Number of inputs: 4
Kind of package: reel; tape
Technology: CMOS
Number of channels: 4
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| MC14067BDWR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 16: 1; Ch: 1; SOIC14
Kind of integrated circuit: demultiplexer; multiplexer
Type of integrated circuit: multiplexer
Case: SOIC14
Technology: CMOS
Kind of output: CMOS; logic
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 600µA
Number of channels: 1
Supply voltage: 3...18V
Output configuration: 16:1
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 16: 1; Ch: 1; SOIC14
Kind of integrated circuit: demultiplexer; multiplexer
Type of integrated circuit: multiplexer
Case: SOIC14
Technology: CMOS
Kind of output: CMOS; logic
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 600µA
Number of channels: 1
Supply voltage: 3...18V
Output configuration: 16:1
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| NCP1342AMAACD1R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO9; flyback; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Case: SO9
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO9; flyback; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Case: SO9
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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