| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SZBZX84C5V6ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZBZX84C5V6LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2SK2394-6-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 223 шт: термін постачання 21-30 дні (днів) |
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2N7002KT7G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.38A Pulsed drain current: 5A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 5260 шт: термін постачання 21-30 дні (днів) |
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FDS4435BZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2131 шт: термін постачання 21-30 дні (днів) |
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FGY160T65SPD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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| LM393EDR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape Kind of comparator: universal Kind of package: reel; tape Operating temperature: 0...70°C Input offset current: 5nA Input bias current: 20nA Input offset voltage: 5mV Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Type of integrated circuit: comparator Case: SO8 |
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В кошику од. на суму грн. | |||||||||||||||||||
| ES3C | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Leakage current: 0.5mA Capacitance: 45pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZBZX84C47LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS35 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W Mounting: SMD Load current: 3A Power dissipation: 2.27W Max. forward voltage: 0.75V Max. forward impulse current: 100A Max. off-state voltage: 50V Case: SMC Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1SS351-TB-E | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape Mounting: SMD Capacitance: 0.9pF Load current: 30mA Max. forward voltage: 0.23V Max. off-state voltage: 5V Case: SC59 Kind of package: reel; tape Semiconductor structure: double series Type of diode: Schottky switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GBPC2506 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GBPC2506W | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTD20P06LT4G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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BSS138K | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 6429 шт: термін постачання 21-30 дні (днів) |
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BSS138 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 273 шт: термін постачання 21-30 дні (днів) |
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| 2SK3557-6-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SK3557-7-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 16mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBZ6V8ALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Number of channels: 2 Kind of package: reel; tape Application: universal Tolerance: ±5% Peak pulse power dissipation: 24W Version: ESD Leakage current: 0.5µA Max. forward impulse current: 2.5A |
на замовлення 1636 шт: термін постачання 21-30 дні (днів) |
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| SZMMBZ6V8ALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Number of channels: 2 Kind of package: reel; tape Application: automotive industry Tolerance: ±5% Peak pulse power dissipation: 25W Max. forward impulse current: 2.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMS015N04B | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PCA9306FMUTCG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: uDFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PCA9306AMUTCG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: UQFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: auto-direction sensing |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PCA9306FMUTAG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: uDFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74AC08DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: quad; 4 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of gate: AND Family: AC Number of inputs: 2 Kind of package: tube |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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MC74AC32DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC |
на замовлення 303 шт: термін постачання 21-30 дні (днів) |
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| FCB110N65F | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 105A Gate charge: 98nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJF15031G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Case: TO220FP Current gain: 40 Mounting: THT Frequency: 30MHz Kind of package: tube Power dissipation: 36W |
на замовлення 185 шт: термін постачання 21-30 дні (днів) |
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NTS2101PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SC70; SOT323 Polarisation: unipolar Drain-source voltage: -8V Drain current: -1.1A On-state resistance: 0.1Ω Power dissipation: 0.29W Gate-source voltage: ±8V Kind of channel: enhancement |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3459 шт: термін постачання 21-30 дні (днів) |
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MBT3904DW1T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Kind of package: reel; tape Type of transistor: NPN x2 Case: SC70-6; SC88; SOT363 Collector current: 0.2A Power dissipation: 0.15W Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz Polarisation: bipolar Mounting: SMD |
на замовлення 9497 шт: термін постачання 21-30 дні (днів) |
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| GBPC1202 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 12A Type of bridge rectifier: single-phase Version: square Electrical mounting: THT Max. forward voltage: 1.1V Load current: 12A Max. forward impulse current: 0.3kA Max. off-state voltage: 200V Kind of package: bulk Leads: connectors FASTON Case: GBPC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4148-T26A | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: Ammo Pack Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
на замовлення 27142 шт: термін постачання 21-30 дні (днів) |
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ES1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 10pF Reverse recovery time: 35ns Leakage current: 0.1mA Load current: 1A Max. forward voltage: 1.3V Power dissipation: 1.47W Max. forward impulse current: 30A Max. off-state voltage: 0.4kV Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC14518BDWG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B Operating temperature: -55...125°C Type of integrated circuit: digital Family: HEF4000B Kind of package: tube Mounting: SMD Case: SO16WB Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC Kind of integrated circuit: BCD; up counter Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC14518BDWR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B Operating temperature: -55...125°C Type of integrated circuit: digital Family: HEF4000B Kind of package: reel; tape Mounting: SMD Case: SO16WB Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC Kind of integrated circuit: BCD; up counter Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRS1100T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Kind of package: reel; tape |
на замовлення 10087 шт: термін постачання 21-30 дні (днів) |
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1N4736A-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA Case: DO41 Semiconductor structure: single diode Mounting: THT Type of diode: Zener Leakage current: 10µA Power dissipation: 1W Tolerance: ±5% Zener voltage: 6.8V Manufacturer series: 1N47xxA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4736ATR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA Case: DO41 Semiconductor structure: single diode Mounting: THT Type of diode: Zener Leakage current: 10µA Power dissipation: 1W Tolerance: ±5% Zener voltage: 6.8V Manufacturer series: 1N47xxA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5931BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB Leakage current: 1µA |
на замовлення 1702 шт: термін постачання 21-30 дні (днів) |
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1N5344BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 10µA |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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1N5344BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 10µA |
на замовлення 1046 шт: термін постачання 21-30 дні (днів) |
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| NCP45525IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Kind of package: reel; tape Kind of output: N-Channel On-state resistance: 31.7mΩ Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Output current: 6A Type of integrated circuit: power switch Case: DFN8 Active logical level: high Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP45525IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Kind of package: reel; tape Kind of output: N-Channel On-state resistance: 31.7mΩ Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Output current: 6A Type of integrated circuit: power switch Case: DFN8 Active logical level: low Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP1337DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 130kHz Mounting: SMD Case: SO7 Number of channels: 1 Operating temperature: 0...125°C Operating voltage: 9...18.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC847BM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.26W Case: SOT723 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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NRVB0540T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Application: automotive industry Case: SOD123 Kind of package: reel; tape Mounting: SMD Type of diode: Schottky switching Semiconductor structure: single diode Max. forward voltage: 0.61V Load current: 0.5A Max. load current: 1A Max. forward impulse current: 5.5A Max. off-state voltage: 40V |
на замовлення 6595 шт: термін постачання 21-30 дні (днів) |
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FDP3632 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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ESD5B5.0ST1G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Peak pulse power dissipation: 50W Case: SOD523 |
на замовлення 2308 шт: термін постачання 21-30 дні (днів) |
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NUP4114UCLW1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape Case: SC88 Version: ESD Application: universal Mounting: SMD Type of diode: TVS array Semiconductor structure: unidirectional Leakage current: 1µA Number of channels: 4 Max. off-state voltage: 5.5V Breakdown voltage: 6.5V Max. forward impulse current: 12A Kind of package: reel; tape |
на замовлення 1478 шт: термін постачання 21-30 дні (днів) |
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| NCP511SN18T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Mounting: SMD Kind of package: reel; tape Case: TSOP5 Operating temperature: -40...85°C Output current: 0.15A Voltage drop: 0.16V Number of channels: 1 Tolerance: ±2% Input voltage: 2.8...6V Output voltage: 1.8V Manufacturer series: NCP511 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMS8090 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 40A; 59W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 59W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74AC125DG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: AC Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 80µA |
на замовлення 203 шт: термін постачання 21-30 дні (днів) |
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MC74AC125DTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of output: 3-state |
на замовлення 731 шт: термін постачання 21-30 дні (днів) |
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MC74AC245DTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; octal; transceiver Number of channels: 8 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Supply voltage: 2...6V DC Family: AC Kind of package: tube Kind of output: 3-state |
на замовлення 425 шт: термін постачання 21-30 дні (днів) |
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BAT54T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Leakage current: 2µA Power dissipation: 0.4W Max. forward impulse current: 0.6A |
на замовлення 3361 шт: термін постачання 21-30 дні (днів) |
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| SZESD5B5.0ST1G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.8...7.8V Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74ACT125DR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Manufacturer series: ACT Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ4V7T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
на замовлення 2020 шт: термін постачання 21-30 дні (днів) |
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| SZBZX84C5V6ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C5V6LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
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В кошику
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| 2SK2394-6-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 223 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.39 грн |
| 13+ | 32.23 грн |
| 50+ | 24.60 грн |
| 100+ | 21.73 грн |
| 2N7002KT7G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 5260 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 60+ | 6.89 грн |
| 123+ | 3.35 грн |
| 250+ | 2.64 грн |
| 500+ | 2.28 грн |
| 1000+ | 2.02 грн |
| 3500+ | 1.95 грн |
| FDS4435BZ | ![]() |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2131 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.17 грн |
| 13+ | 33.54 грн |
| 50+ | 26.82 грн |
| 100+ | 24.44 грн |
| 250+ | 21.81 грн |
| 500+ | 20.83 грн |
| FGY160T65SPD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1064.18 грн |
| 5+ | 908.62 грн |
| 10+ | 848.76 грн |
| LM393EDR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: SO8
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: SO8
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В кошику
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| ES3C |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.5mA
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.5mA
Capacitance: 45pF
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| BZX84C47LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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| SZBZX84C47LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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| SS35 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Case: SMC
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Case: SMC
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| 1SS351-TB-E |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Capacitance: 0.9pF
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Case: SC59
Kind of package: reel; tape
Semiconductor structure: double series
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Capacitance: 0.9pF
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Case: SC59
Kind of package: reel; tape
Semiconductor structure: double series
Type of diode: Schottky switching
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| GBPC2506 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| GBPC2506W |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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| NTD20P06LT4G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 52.48 грн |
| 9+ | 48.06 грн |
| 10+ | 43.63 грн |
| 20+ | 39.28 грн |
| 50+ | 34.44 грн |
| 100+ | 31.74 грн |
| 200+ | 30.26 грн |
| BSS138K |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 6429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.90 грн |
| 48+ | 8.69 грн |
| 72+ | 5.72 грн |
| 100+ | 4.85 грн |
| 500+ | 3.51 грн |
| 1000+ | 3.14 грн |
| 3000+ | 2.71 грн |
| 6000+ | 2.52 грн |
| BSS138 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 273 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.71 грн |
| 82+ | 5.00 грн |
| 104+ | 3.97 грн |
| 138+ | 2.99 грн |
| 250+ | 2.58 грн |
| 2SK3557-6-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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| 2SK3557-7-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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| MMBZ6V8ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Tolerance: ±5%
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 0.5µA
Max. forward impulse current: 2.5A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Tolerance: ±5%
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 0.5µA
Max. forward impulse current: 2.5A
на замовлення 1636 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.95 грн |
| 77+ | 5.33 грн |
| 120+ | 3.44 грн |
| 148+ | 2.78 грн |
| 500+ | 1.79 грн |
| 1000+ | 1.53 грн |
| 1500+ | 1.50 грн |
| SZMMBZ6V8ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Peak pulse power dissipation: 25W
Max. forward impulse current: 2.5A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Peak pulse power dissipation: 25W
Max. forward impulse current: 2.5A
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| FDMS015N04B |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PCA9306FMUTCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
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| PCA9306AMUTCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
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| PCA9306FMUTAG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
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| MC74AC08DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: AND
Family: AC
Number of inputs: 2
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: AND
Family: AC
Number of inputs: 2
Kind of package: tube
на замовлення 429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 16+ | 25.91 грн |
| 25+ | 23.21 грн |
| 55+ | 21.40 грн |
| 110+ | 20.83 грн |
| MC74AC32DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
на замовлення 303 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.72 грн |
| 10+ | 43.63 грн |
| 25+ | 27.64 грн |
| 55+ | 23.78 грн |
| FCB110N65F |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
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| MJF15031G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Case: TO220FP
Current gain: 40
Mounting: THT
Frequency: 30MHz
Kind of package: tube
Power dissipation: 36W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Case: TO220FP
Current gain: 40
Mounting: THT
Frequency: 30MHz
Kind of package: tube
Power dissipation: 36W
на замовлення 185 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 183.69 грн |
| 10+ | 113.99 грн |
| 20+ | 100.05 грн |
| 50+ | 86.93 грн |
| NTS2101PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.20 грн |
| 26+ | 16.24 грн |
| 28+ | 14.68 грн |
| 50+ | 13.37 грн |
| 100+ | 12.05 грн |
| 500+ | 9.02 грн |
| NTZD3155CT2G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3459 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.38 грн |
| 25+ | 16.40 грн |
| 33+ | 12.63 грн |
| 100+ | 8.69 грн |
| 500+ | 6.81 грн |
| MBT3904DW1T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
на замовлення 9497 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.60 грн |
| 91+ | 4.51 грн |
| 130+ | 3.16 грн |
| 250+ | 2.76 грн |
| 500+ | 2.49 грн |
| 1000+ | 2.26 грн |
| 2000+ | 2.05 грн |
| 5000+ | 1.81 грн |
| GBPC1202 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 12A
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 200V
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 12A
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 200V
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
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| 1N4148-T26A |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
на замовлення 27142 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 100+ | 4.10 грн |
| 302+ | 1.36 грн |
| 500+ | 0.89 грн |
| 1000+ | 0.77 грн |
| 2500+ | 0.67 грн |
| 5000+ | 0.63 грн |
| 10000+ | 0.60 грн |
| ES1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 10pF
Reverse recovery time: 35ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 10pF
Reverse recovery time: 35ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching
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| MC14518BDWG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
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| MC14518BDWR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
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| MBRS1100T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
на замовлення 10087 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.38 грн |
| 20+ | 20.50 грн |
| 22+ | 18.78 грн |
| 50+ | 15.09 грн |
| 100+ | 13.61 грн |
| 250+ | 11.64 грн |
| 500+ | 10.17 грн |
| 1000+ | 8.69 грн |
| 2500+ | 6.72 грн |
| 1N4736A-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
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| 1N4736ATR | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Kind of package: reel; tape
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| 1N5931BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
на замовлення 1702 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.31 грн |
| 34+ | 12.14 грн |
| 50+ | 9.35 грн |
| 100+ | 8.45 грн |
| 500+ | 7.05 грн |
| 1N5344BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.14 грн |
| 19+ | 22.47 грн |
| 50+ | 16.98 грн |
| 100+ | 14.84 грн |
| 500+ | 11.48 грн |
| 1N5344BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
на замовлення 1046 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.90 грн |
| 31+ | 13.28 грн |
| 34+ | 12.38 грн |
| 50+ | 12.30 грн |
| NCP45525IMNTWG-H |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
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| NCP45525IMNTWG-L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
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| NCP1337DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
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| BC847BM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 35+ | 11.81 грн |
| 53+ | 7.84 грн |
| 100+ | 6.50 грн |
| 250+ | 5.15 грн |
| 500+ | 4.39 грн |
| 1000+ | 3.80 грн |
| NRVB0540T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Load current: 0.5A
Max. load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Load current: 0.5A
Max. load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 40V
на замовлення 6595 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.08 грн |
| 26+ | 16.07 грн |
| 31+ | 13.45 грн |
| 39+ | 10.66 грн |
| 100+ | 7.71 грн |
| 250+ | 7.30 грн |
| FDP3632 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 291.44 грн |
| 10+ | 207.47 грн |
| 25+ | 159.09 грн |
| ESD5B5.0ST1G | ![]() |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 50W
Case: SOD523
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 50W
Case: SOD523
на замовлення 2308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.60 грн |
| 50+ | 8.36 грн |
| 55+ | 7.46 грн |
| 100+ | 4.72 грн |
| 500+ | 3.35 грн |
| 1000+ | 2.89 грн |
| NUP4114UCLW1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape
Case: SC88
Version: ESD
Application: universal
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape
Case: SC88
Version: ESD
Application: universal
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Kind of package: reel; tape
на замовлення 1478 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.61 грн |
| 22+ | 19.19 грн |
| 24+ | 17.14 грн |
| 50+ | 12.87 грн |
| 100+ | 11.40 грн |
| 250+ | 9.51 грн |
| 500+ | 8.28 грн |
| 1000+ | 7.71 грн |
| NCP511SN18T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.15A
Voltage drop: 0.16V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.8...6V
Output voltage: 1.8V
Manufacturer series: NCP511
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.15A
Voltage drop: 0.16V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.8...6V
Output voltage: 1.8V
Manufacturer series: NCP511
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| FDMS8090 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 59W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 59W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 59W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 59W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74AC125DG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
на замовлення 203 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 17+ | 25.50 грн |
| 25+ | 23.21 грн |
| 55+ | 21.49 грн |
| 110+ | 20.17 грн |
| MC74AC125DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
на замовлення 731 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.33 грн |
| 17+ | 25.59 грн |
| 25+ | 22.47 грн |
| 100+ | 18.37 грн |
| 250+ | 17.96 грн |
| MC74AC245DTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Kind of output: 3-state
на замовлення 425 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.13 грн |
| 10+ | 46.99 грн |
| 25+ | 38.71 грн |
| 75+ | 33.70 грн |
| BAT54T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
на замовлення 3361 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.30 грн |
| 125+ | 3.28 грн |
| 191+ | 2.16 грн |
| 250+ | 1.86 грн |
| 500+ | 1.67 грн |
| 1000+ | 1.52 грн |
| 3000+ | 1.33 грн |
| SZESD5B5.0ST1G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MC74ACT125DR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ4V7T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
на замовлення 2020 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.18 грн |
| 100+ | 4.10 грн |
| 137+ | 3.00 грн |
| 159+ | 2.58 грн |
| 500+ | 1.80 грн |
| 1000+ | 1.54 грн |
| 1500+ | 1.40 грн |



























