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NSVDAN222T1G ONSEMI dan222-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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DAN222G ONSEMI dan222-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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DAP222G ONSEMI dap222-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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1N5400RLG 1N5400RLG ONSEMI 1n5400-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
на замовлення 1062 шт:
термін постачання 14-30 дні (днів)
46+9.94 грн
49+8.73 грн
50+8.56 грн
Мінімальне замовлення: 46
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1N5400G ONSEMI 1n5400-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; bulk; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO201AD
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2SD1624T-TD-E ONSEMI en2019-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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2SD1624S-TD-E ONSEMI en2019-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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NTS4173PT1G NTS4173PT1G ONSEMI nts4173p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -5A
Drain current: -0.8A
Gate charge: 10.1nC
On-state resistance: 0.15Ω
Power dissipation: 0.29W
Gate-source voltage: ±12V
Kind of channel: enhancement
на замовлення 286 шт:
термін постачання 14-30 дні (днів)
20+22.60 грн
57+7.47 грн
65+6.55 грн
100+6.21 грн
Мінімальне замовлення: 20
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BB-GEVK ONSEMI EVBUM2497-D.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: FT232BL; NCS36510
Connection: pin strips; Pmod socket x2; power supply; USB
Type of development kit: evaluation
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FDMC012N03 ONSEMI fdmc012n03-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDB035AN06A0 FDB035AN06A0 ONSEMI FDB035AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 124nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
2+351.59 грн
10+275.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MC78LC33NTRG MC78LC33NTRG ONSEMI MC78LCxx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
на замовлення 3029 шт:
термін постачання 14-30 дні (днів)
20+23.50 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MC78LC50NTRG MC78LC50NTRG ONSEMI MC78LCxx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC78LC00
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 38mV
Tolerance: ±2.5%
Input voltage: 6...12V
Output voltage: 5V
Type of integrated circuit: voltage regulator
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
23+19.88 грн
28+15.11 грн
32+13.26 грн
38+11.16 грн
100+8.48 грн
250+7.22 грн
500+6.71 грн
1000+6.29 грн
Мінімальне замовлення: 23
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NTHL040N120SC1 NTHL040N120SC1 ONSEMI NTHL040N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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MC14015BDR2G MC14015BDR2G ONSEMI MC14015B-D.pdf Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Case: SOIC16
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Technology: CMOS
Operating temperature: -55...125°C
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
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FAN53601UC182X ONSEMI FAN53611-D.PDF Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
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FAN53611AUC18X ONSEMI FAN53611-D.PDF Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
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FGY40T120SMD ONSEMI fgy40t120smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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FGHL40T120RWD ONSEMI fghl40t120rwd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
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FGY140T120SWD ONSEMI fgy140t120swd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
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FGH4L40T120LQD ONSEMI fgh4l40t120lqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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AFGHL40T120RWD ONSEMI afghl40t120rwd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
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NSPM5131MUTBG ONSEMI nspm5131-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 13.5V
Breakdown voltage: 16.5V
Kind of package: reel; tape
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2N6284G 2N6284G ONSEMI 2N6284.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 160W
Case: TO3
Mounting: THT
Collector current: 20A
Collector-emitter voltage: 100V
Kind of package: in-tray
Kind of transistor: Darlington
Current gain: 100...18000
на замовлення 129 шт:
термін постачання 14-30 дні (днів)
2+375.09 грн
10+262.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
2N6292G 2N6292G ONSEMI 2n6107-d.pdf description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Collector current: 7A
Collector-emitter voltage: 80V
Kind of package: tube
Frequency: 4MHz
на замовлення 938 шт:
термін постачання 14-30 дні (днів)
5+99.42 грн
6+69.99 грн
10+58.58 грн
50+38.10 грн
100+37.77 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NDT2955 NDT2955 ONSEMI NDT2955-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.5A
On-state resistance: 0.3Ω
Power dissipation: 3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 677 шт:
термін постачання 14-30 дні (днів)
8+58.75 грн
12+37.93 грн
50+27.36 грн
100+23.84 грн
500+17.96 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
NTF2955T1G NTF2955T1G ONSEMI ntf2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 917 шт:
термін постачання 14-30 дні (днів)
5+95.81 грн
6+83.51 грн
10+65.55 грн
20+57.41 грн
50+48.34 грн
100+43.39 грн
200+39.61 грн
500+36.17 грн
Мінімальне замовлення: 5
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NVF2955T1G NVF2955T1G ONSEMI NTF2955.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 695 шт:
термін постачання 14-30 дні (днів)
6+84.96 грн
10+62.11 грн
25+51.20 грн
Мінімальне замовлення: 6
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MJD2955G MJD2955G ONSEMI MJD2955_MJD3055.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: tube
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
7+75.02 грн
10+62.27 грн
25+52.71 грн
Мінімальне замовлення: 7
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MJE2955TG ONSEMI mje2955t-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of transistor: PNP
Power dissipation: 125W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
6+75.92 грн
10+46.08 грн
50+38.19 грн
100+37.26 грн
Мінімальне замовлення: 6
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SVD2955T4G ONSEMI ntd2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
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MJD2955T4G ONSEMI mjd2955-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
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MJF2955G ONSEMI MJF2955_MJF3055.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 30W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 90V
Frequency: 2MHz
Polarisation: bipolar
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BAS16TT1G
+1
 		BAS16TT1G ONSEMI bas16tt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Power dissipation: 0.36W
Leakage current: 50µA
Reverse recovery time: 6ns
Capacitance: 2pF
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NSVBAS16TT1G ONSEMI BAS16TT1-D.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
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NCV8535MN500R2G ONSEMI ncv8535-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Case: DFN10
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NCV8535MN330R2G ONSEMI ncv8535-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Case: DFN10
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MM74HCT14M MM74HCT14M ONSEMI MM74HCT14-DTE.pdf description Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 10µA
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
на замовлення 156 шт:
термін постачання 14-30 дні (днів)
16+28.92 грн
21+20.39 грн
25+18.80 грн
55+17.54 грн
110+16.37 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MC74HCT14ADG MC74HCT14ADG ONSEMI MC74HCT14A-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
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MM74HCT14MX MM74HCT14MX ONSEMI MM74HCT14-D.pdf description Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 13ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
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MC74HCT14ADR2G MC74HCT14ADR2G ONSEMI MC74HCT14A-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
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MC74HCT14ADTR2G MC74HCT14ADTR2G ONSEMI MC74HCT14A-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
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MM74HCT14MTCX MM74HCT14MTCX ONSEMI MM74HCT14-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 13ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
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MC33164D-5R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC33164D-3R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 3V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC33164DM-3R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: TSSOP8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 3V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC33164DM-5R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: TSSOP8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC34164D-5G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: 0...70°C
Number of channels: 1
Supply voltage: 10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC34164D-5R2G ONSEMI mc34164-d.pdf Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: 0...70°C
Number of channels: 1
Supply voltage: 10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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ADT7460ARQZ-REEL ONSEMI ADT7460.pdf ONSMS36070-1.pdf?t.download=true&u=5oefqw Category: Temperature transducers
Description: IC: temperature sensor; -40÷120°C; QSOP16; SMD; Accur: ±3°C; 6.5V
Case: QSOP16
Mounting: SMD
Type of integrated circuit: temperature sensor
Temperature measuring range: -40...120°C
Temperature measurement accuracy: ±3°C
Supply voltage: 6.5V
Converter resolution: 10bit
Interface: 3-wire; Microwire; SPI
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NCV4949CDR2G ONSEMI ncv4949c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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NCV4949CPDR2G ONSEMI ncv4949c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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CAT24C16WI-GT3 CAT24C16WI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
на замовлення 415 шт:
термін постачання 14-30 дні (днів)
20+23.50 грн
21+20.56 грн
25+19.47 грн
50+18.46 грн
100+17.46 грн
250+16.11 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
N24C16UDTG ONSEMI N24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
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N24C16UVTG ONSEMI n24c02-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
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NV24C16DTVLT3G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16DWVLT3G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16MUW3VLTBG ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16SNVLT3G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16UVLT2G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NSVDAN222T1G dan222-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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DAN222G dan222-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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DAP222G dap222-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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1N5400RLG 1n5400-d.pdf
1N5400RLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
на замовлення 1062 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+9.94 грн
49+8.73 грн
50+8.56 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
1N5400G 1n5400-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; bulk; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO201AD
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2SD1624T-TD-E en2019-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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2SD1624S-TD-E en2019-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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NTS4173PT1G nts4173p-d.pdf
NTS4173PT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -5A
Drain current: -0.8A
Gate charge: 10.1nC
On-state resistance: 0.15Ω
Power dissipation: 0.29W
Gate-source voltage: ±12V
Kind of channel: enhancement
на замовлення 286 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.60 грн
57+7.47 грн
65+6.55 грн
100+6.21 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BB-GEVK EVBUM2497-D.PDF
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: FT232BL,NCS36510
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: FT232BL; NCS36510
Connection: pin strips; Pmod socket x2; power supply; USB
Type of development kit: evaluation
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FDMC012N03 fdmc012n03-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDB035AN06A0 FDB035AN06A0.pdf
FDB035AN06A0
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 124nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+351.59 грн
10+275.28 грн
Мінімальне замовлення: 2
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MC78LC33NTRG MC78LCxx.pdf
MC78LC33NTRG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
на замовлення 3029 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.50 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MC78LC50NTRG MC78LCxx.pdf
MC78LC50NTRG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC78LC00
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 38mV
Tolerance: ±2.5%
Input voltage: 6...12V
Output voltage: 5V
Type of integrated circuit: voltage regulator
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.88 грн
28+15.11 грн
32+13.26 грн
38+11.16 грн
100+8.48 грн
250+7.22 грн
500+6.71 грн
1000+6.29 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
NTHL040N120SC1 NTHL040N120SC1.PDF
NTHL040N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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MC14015BDR2G MC14015B-D.pdf
MC14015BDR2G
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Case: SOIC16
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Technology: CMOS
Operating temperature: -55...125°C
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
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FAN53601UC182X FAN53611-D.PDF
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
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FAN53611AUC18X FAN53611-D.PDF
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP6; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: WLCSP6
Mounting: SMD
Kind of package: reel; tape
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FGY40T120SMD fgy40t120smd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 441W
Case: TO247H03
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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FGHL40T120RWD fghl40t120rwd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
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FGY140T120SWD fgy140t120swd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
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FGH4L40T120LQD fgh4l40t120lqd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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AFGHL40T120RWD afghl40t120rwd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
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NSPM5131MUTBG nspm5131-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 16.5V; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 13.5V
Breakdown voltage: 16.5V
Kind of package: reel; tape
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2N6284G 2N6284.PDF
2N6284G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 160W
Case: TO3
Mounting: THT
Collector current: 20A
Collector-emitter voltage: 100V
Kind of package: in-tray
Kind of transistor: Darlington
Current gain: 100...18000
на замовлення 129 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+375.09 грн
10+262.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
2N6292G description 2n6107-d.pdf
2N6292G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Collector current: 7A
Collector-emitter voltage: 80V
Kind of package: tube
Frequency: 4MHz
на замовлення 938 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+99.42 грн
6+69.99 грн
10+58.58 грн
50+38.10 грн
100+37.77 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NDT2955 NDT2955-dte.pdf
NDT2955
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.5A
On-state resistance: 0.3Ω
Power dissipation: 3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 677 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+58.75 грн
12+37.93 грн
50+27.36 грн
100+23.84 грн
500+17.96 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
NTF2955T1G ntf2955-d.pdf
NTF2955T1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 917 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+95.81 грн
6+83.51 грн
10+65.55 грн
20+57.41 грн
50+48.34 грн
100+43.39 грн
200+39.61 грн
500+36.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NVF2955T1G NTF2955.PDF
NVF2955T1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 695 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+84.96 грн
10+62.11 грн
25+51.20 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MJD2955G MJD2955_MJD3055.PDF
MJD2955G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: tube
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+75.02 грн
10+62.27 грн
25+52.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJE2955TG mje2955t-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of transistor: PNP
Power dissipation: 125W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+75.92 грн
10+46.08 грн
50+38.19 грн
100+37.26 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SVD2955T4G ntd2955-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
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MJD2955T4G mjd2955-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
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MJF2955G MJF2955_MJF3055.PDF
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 10A; 30W; TO220FP
Kind of package: tube
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 30W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 90V
Frequency: 2MHz
Polarisation: bipolar
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BAS16TT1G bas16tt1-d.pdf
BAS16TT1G
+1
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Power dissipation: 0.36W
Leakage current: 50µA
Reverse recovery time: 6ns
Capacitance: 2pF
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NSVBAS16TT1G BAS16TT1-D.PDF
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
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NCV8535MN500R2G ncv8535-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Case: DFN10
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NCV8535MN330R2G ncv8535-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFN10; SMD
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Case: DFN10
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MM74HCT14M description MM74HCT14-DTE.pdf
MM74HCT14M
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 10µA
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
на замовлення 156 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+28.92 грн
21+20.39 грн
25+18.80 грн
55+17.54 грн
110+16.37 грн
Мінімальне замовлення: 16
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MC74HCT14ADG MC74HCT14A-D.pdf
MC74HCT14ADG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: tube
Kind of gate: NOT
Technology: CMOS
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MM74HCT14MX description MM74HCT14-D.pdf
MM74HCT14MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 13ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
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MC74HCT14ADR2G MC74HCT14A-D.pdf
MC74HCT14ADR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
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MC74HCT14ADTR2G MC74HCT14A-D.pdf
MC74HCT14ADTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 32ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 32ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
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MM74HCT14MTCX MM74HCT14-D.pdf
MM74HCT14MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 13ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of input: with Schmitt trigger
Delay time: 13ns
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS
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MC33164D-5R2G mc34164-d.pdf
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC33164D-3R2G mc34164-d.pdf
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 3V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC33164DM-3R2G mc34164-d.pdf
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: TSSOP8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 3V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC33164DM-5R2G mc34164-d.pdf
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: TSSOP8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 1...10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC34164D-5G mc34164-d.pdf
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: 0...70°C
Number of channels: 1
Supply voltage: 10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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MC34164D-5R2G mc34164-d.pdf
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Case: SOIC8
Active logical level: low
Mounting: SMD
Kind of RESET output: open drain
Operating temperature: 0...70°C
Number of channels: 1
Supply voltage: 10V
Threshold on-voltage: 5V
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
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ADT7460ARQZ-REEL ADT7460.pdf ONSMS36070-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; -40÷120°C; QSOP16; SMD; Accur: ±3°C; 6.5V
Case: QSOP16
Mounting: SMD
Type of integrated circuit: temperature sensor
Temperature measuring range: -40...120°C
Temperature measurement accuracy: ±3°C
Supply voltage: 6.5V
Converter resolution: 10bit
Interface: 3-wire; Microwire; SPI
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NCV4949CDR2G ncv4949c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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NCV4949CPDR2G ncv4949c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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CAT24C16WI-GT3 CAT24C01-D.pdf
CAT24C16WI-GT3
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
на замовлення 415 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.50 грн
21+20.56 грн
25+19.47 грн
50+18.46 грн
100+17.46 грн
250+16.11 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
N24C16UDTG N24C02-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
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N24C16UVTG n24c02-d.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
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NV24C16DTVLT3G NV24C16LV-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16DWVLT3G NV24C16LV-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16MUW3VLTBG NV24C16LV-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16SNVLT3G NV24C16LV-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16UVLT2G NV24C16LV-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
товару немає в наявності
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