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NCS210RSQT2G ONSEMI ncs210r-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.035mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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NCV210RSQT2G ONSEMI ncs210r-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.035mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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NCS199A3RSQT2G ONSEMI ncs199a1r-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.15mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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74VHC86M 74VHC86M ONSEMI FAIRS26223-1.pdf?t.download=true&u=5oefqw 74vhc86-d.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHC
Kind of package: tube
Supply voltage: 2...5.5V DC
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74VHC86MTCX 74VHC86MTCX ONSEMI 74vhc86-d.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHC
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
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74VHC86MX 74VHC86MX ONSEMI FAIRS26223-1.pdf?t.download=true&u=5oefqw 74vhc86-d.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHC
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
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MC74VHC86DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633C86DAC40D3&compId=MC74VHC86-D.pdf?ci_sign=6b70d0bdad8847cb6f9a2706c972395338ae4d3f Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
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MC74VHC86DTR2G MC74VHC86DTR2G ONSEMI mc74vhc86-d.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 20µA
Family: VHC
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
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MC7815ABD2TR4G ONSEMI mc7800-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC7815ABTG ONSEMI mc7800-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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NSP4201MR6T1G ONSEMI nsp4201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Type of diode: TVS array
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NUP4004M5T1G ONSEMI nup4004m5-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7V; bidirectional; TSOP5; Ch: 4; reel,tape
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 7V
Semiconductor structure: bidirectional
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D45H11G ONSEMI d44h-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
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MJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
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NJVMJD45H11G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
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NJVMJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NJVMJD45H11T4G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDB33N25TM FDB33N25TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDDFEF6AA19E28&compId=FDB33N25.pdf?ci_sign=d65b6cd613543e4b3c73aaeff4e0162488d4ffa4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 33A
Power dissipation: 235W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 582 шт:
термін постачання 21-30 дні (днів)
3+176.48 грн
5+140.01 грн
10+97.85 грн
27+92.28 грн
100+88.30 грн
Мінімальне замовлення: 3
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PN2907ABU PN2907ABU ONSEMI pzt2907a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
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PN2907ATA PN2907ATA ONSEMI pzt2907a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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PN2907ATAR PN2907ATAR ONSEMI pzt2907a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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PN2907ATF PN2907ATF ONSEMI pzt2907a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
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PN2907ATFR PN2907ATFR ONSEMI pzt2907a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 1989 шт:
термін постачання 21-30 дні (днів)
39+11.14 грн
82+4.85 грн
100+4.26 грн
500+3.85 грн
Мінімальне замовлення: 39
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NSVBC858BLT1G ONSEMI bc856alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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GRUBC858BWT1G ONSEMI Category: Unclassified
Description: GRUBC858BWT1G
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
6000+1.29 грн
Мінімальне замовлення: 6000
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MOC3020TVM ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MOC3020VM ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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FDN360P FDN360P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED680C11C02328CF1BF&compId=FDN360P.pdf?ci_sign=65916941ad2fbf9bcb45a21d17f0bdfd64119574 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 9nC
Technology: PowerTrench®
на замовлення 3210 шт:
термін постачання 21-30 дні (днів)
11+40.26 грн
13+32.30 грн
14+28.56 грн
50+20.21 грн
100+17.26 грн
101+9.31 грн
277+8.83 грн
Мінімальне замовлення: 11
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MMBF5103 MMBF5103 ONSEMI mmbf5103-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)
17+25.70 грн
25+16.55 грн
30+13.52 грн
100+10.02 грн
114+8.19 грн
314+7.72 грн
500+7.48 грн
Мінімальне замовлення: 17
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MBRF30L60CTG ONSEMI mbr30l60ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
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FOD4216SD ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Turn-off time: 52µs
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FOD4216SDV ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216SV ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216TV ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216V ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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DTA144WET1G ONSEMI dta144w-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
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DTA144TET1G ONSEMI DTA144T-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
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DTA144TM3T5G ONSEMI dta144t-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
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BC858AWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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LMV393MUTAG ONSEMI lmv331-d.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 2; 1.5us; 2.7÷5V; SMT; uDFN8; reel,tape; Iio: 1nA
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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NST489AMT1G ONSEMI nst489amt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 0.535W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
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NCP1126BP65G ONSEMI ncp1126-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 8.5÷35VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
On-state resistance: 5.4Ω
Operating voltage: 8.5...35V DC
Frequency: 61...71kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP7
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NCP1246AD065R2G ONSEMI ncp1246-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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GBU4M GBU4M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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MCH6001-TL-E ONSEMI ena1601-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 8V; 150mA; 600mW; MCPH6
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 0.15A
Power dissipation: 0.6W
Collector-emitter voltage: 8V
Current gain: 60...150
Frequency: 13...16GHz
Case: MCPH6
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NTS4001NT1G NTS4001NT1G ONSEMI nts4001n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 3209 шт:
термін постачання 21-30 дні (днів)
39+11.14 грн
48+8.43 грн
55+7.24 грн
82+4.88 грн
100+4.26 грн
250+3.73 грн
341+2.74 грн
938+2.59 грн
Мінімальне замовлення: 39
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1SS400T1G 1SS400T1G ONSEMI 1ss400t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Max. forward voltage: 1.2V
на замовлення 4509 шт:
термін постачання 21-30 дні (днів)
56+7.71 грн
66+6.05 грн
88+4.57 грн
100+4.01 грн
474+1.96 грн
1303+1.86 грн
Мінімальне замовлення: 56
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FNB43060T2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95FE7C018BF380CE&compId=FNB43060T2.pdf?ci_sign=f3ad9b3a49786048233658d1d0590e9dd4c36740 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
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MUR1100EG ONSEMI mur180e-d.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Reverse recovery time: 100ns
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FDB075N15A ONSEMI fdp075n15a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 522A
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FDB075N15A-F085 ONSEMI fdb075n15a_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3021TVM ONSEMI moc3023m-d.pdf FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MOC3021SVM ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MOC3021VM ONSEMI FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MC14070BDG MC14070BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: quad; 4
Kind of package: tube
Kind of gate: XOR
Operating temperature: -55...125°C
Delay time: 150ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
13+32.22 грн
40+23.86 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FQD16N25CTM FQD16N25CTM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197B706AEBEC259&compId=FQD16N25C.pdf?ci_sign=8644cd4bd1abc793db4f96f5c30357ab5205bd62 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMA1023PZ
+1
 		FDMA1023PZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF2F8706057E28&compId=FDMA1023PZ.pdf?ci_sign=38fcd52e75e1f2ae3c9c43fc4f339ac121a1cc8e Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
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1N5927BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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MAGNCV8402ASTT1G ONSEMI Category: Unclassified
Description: MAGNCV8402ASTT1G
на замовлення 111000 шт:
термін постачання 21-30 дні (днів)
1000+21.67 грн
Мінімальне замовлення: 1000
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ESD5Z12T1G ESD5Z12T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996 description Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 240W
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Version: ESD
Kind of package: reel; tape
на замовлення 3875 шт:
термін постачання 21-30 дні (днів)
63+6.85 грн
76+5.25 грн
90+4.45 грн
145+2.75 грн
177+2.26 грн
500+1.61 грн
1000+1.46 грн
1500+1.40 грн
3000+1.38 грн
Мінімальне замовлення: 63
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NCS210RSQT2G ncs210r-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.035mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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NCV210RSQT2G ncs210r-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.035mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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NCS199A3RSQT2G ncs199a1r-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.15mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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74VHC86M FAIRS26223-1.pdf?t.download=true&u=5oefqw 74vhc86-d.pdf
74VHC86M
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHC
Kind of package: tube
Supply voltage: 2...5.5V DC
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74VHC86MTCX 74vhc86-d.pdf
74VHC86MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHC
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
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74VHC86MX FAIRS26223-1.pdf?t.download=true&u=5oefqw 74vhc86-d.pdf
74VHC86MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHC
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
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MC74VHC86DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633C86DAC40D3&compId=MC74VHC86-D.pdf?ci_sign=6b70d0bdad8847cb6f9a2706c972395338ae4d3f
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
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MC74VHC86DTR2G mc74vhc86-d.pdf
MC74VHC86DTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 20µA
Family: VHC
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
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MC7815ABD2TR4G mc7800-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC7815ABTG mc7800-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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NSP4201MR6T1G nsp4201mr6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Type of diode: TVS array
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NUP4004M5T1G nup4004m5-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 7V; bidirectional; TSOP5; Ch: 4; reel,tape
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 7V
Semiconductor structure: bidirectional
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D45H11G d44h-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
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MJD45H11RLG mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
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NJVMJD45H11G mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
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NJVMJD45H11RLG mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NJVMJD45H11T4G mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDB33N25TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDDFEF6AA19E28&compId=FDB33N25.pdf?ci_sign=d65b6cd613543e4b3c73aaeff4e0162488d4ffa4
FDB33N25TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 33A
Power dissipation: 235W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 582 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.48 грн
5+140.01 грн
10+97.85 грн
27+92.28 грн
100+88.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PN2907ABU pzt2907a-d.pdf
PN2907ABU
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
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PN2907ATA pzt2907a-d.pdf
PN2907ATA
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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PN2907ATAR pzt2907a-d.pdf
PN2907ATAR
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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PN2907ATF pzt2907a-d.pdf
PN2907ATF
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
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PN2907ATFR pzt2907a-d.pdf
PN2907ATFR
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 1989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.14 грн
82+4.85 грн
100+4.26 грн
500+3.85 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
NSVBC858BLT1G bc856alt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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GRUBC858BWT1G
Виробник: ONSEMI
Category: Unclassified
Description: GRUBC858BWT1G
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6000+1.29 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
MOC3020TVM moc3023m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MOC3020VM moc3023m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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FDN360P pVersion=0046&contRep=ZT&docId=005056AB752F1ED680C11C02328CF1BF&compId=FDN360P.pdf?ci_sign=65916941ad2fbf9bcb45a21d17f0bdfd64119574
FDN360P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 9nC
Technology: PowerTrench®
на замовлення 3210 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.26 грн
13+32.30 грн
14+28.56 грн
50+20.21 грн
100+17.26 грн
101+9.31 грн
277+8.83 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MMBF5103 mmbf5103-d.pdf
MMBF5103
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.70 грн
25+16.55 грн
30+13.52 грн
100+10.02 грн
114+8.19 грн
314+7.72 грн
500+7.48 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MBRF30L60CTG mbr30l60ct-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
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FOD4216SD fod4218-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Turn-off time: 52µs
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FOD4216SDV fod4218-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216SV fod4218-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216TV fod4218-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216V fod4218-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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DTA144WET1G dta144w-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
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DTA144TET1G DTA144T-D.PDF
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
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DTA144TM3T5G dta144t-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
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BC858AWT1G bc856bwt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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LMV393MUTAG lmv331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 1.5us; 2.7÷5V; SMT; uDFN8; reel,tape; Iio: 1nA
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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NST489AMT1G nst489amt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 0.535W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
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NCP1126BP65G ncp1126-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 8.5÷35VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
On-state resistance: 5.4Ω
Operating voltage: 8.5...35V DC
Frequency: 61...71kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP7
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NCP1246AD065R2G ncp1246-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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GBU4M pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4M
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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MCH6001-TL-E ena1601-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 8V; 150mA; 600mW; MCPH6
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 0.15A
Power dissipation: 0.6W
Collector-emitter voltage: 8V
Current gain: 60...150
Frequency: 13...16GHz
Case: MCPH6
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NTS4001NT1G nts4001n-d.pdf
NTS4001NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 3209 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.14 грн
48+8.43 грн
55+7.24 грн
82+4.88 грн
100+4.26 грн
250+3.73 грн
341+2.74 грн
938+2.59 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
1SS400T1G 1ss400t1-d.pdf
1SS400T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Max. forward voltage: 1.2V
на замовлення 4509 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.71 грн
66+6.05 грн
88+4.57 грн
100+4.01 грн
474+1.96 грн
1303+1.86 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
FNB43060T2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95FE7C018BF380CE&compId=FNB43060T2.pdf?ci_sign=f3ad9b3a49786048233658d1d0590e9dd4c36740
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
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MUR1100EG description mur180e-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Reverse recovery time: 100ns
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FDB075N15A fdp075n15a-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 522A
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FDB075N15A-F085 fdb075n15a_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3021TVM moc3023m-d.pdf FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MOC3021SVM moc3023m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MOC3021VM FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MC14070BDG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5
MC14070BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: quad; 4
Kind of package: tube
Kind of gate: XOR
Operating temperature: -55...125°C
Delay time: 150ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+32.22 грн
40+23.86 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FQD16N25CTM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197B706AEBEC259&compId=FQD16N25C.pdf?ci_sign=8644cd4bd1abc793db4f96f5c30357ab5205bd62
FQD16N25CTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMA1023PZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF2F8706057E28&compId=FDMA1023PZ.pdf?ci_sign=38fcd52e75e1f2ae3c9c43fc4f339ac121a1cc8e
FDMA1023PZ
+1
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
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1N5927BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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MAGNCV8402ASTT1G
Виробник: ONSEMI
Category: Unclassified
Description: MAGNCV8402ASTT1G
на замовлення 111000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+21.67 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ESD5Z12T1G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996
ESD5Z12T1G
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 240W
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Version: ESD
Kind of package: reel; tape
на замовлення 3875 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.85 грн
76+5.25 грн
90+4.45 грн
145+2.75 грн
177+2.26 грн
500+1.61 грн
1000+1.46 грн
1500+1.40 грн
3000+1.38 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
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