| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MM74HC240MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 2 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC Quiescent current: 160µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5363BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 1N53xxB Semiconductor structure: single diode Mounting: THT Type of diode: Zener Power dissipation: 5W Tolerance: ±5% Manufacturer series: 1N53xxB Zener voltage: 30V Kind of package: bulk Case: CASE017AA |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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| 1N5363BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 30V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAV23S | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 9A |
на замовлення 2800 шт: термін постачання 14-30 дні (днів) |
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BAV23CLT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 150ns Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 9A |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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| NSVBAV23CLT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 150ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMBJ30A | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 35V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC157ADG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: data selector; multiplexer Number of inputs: 2 Mounting: SMD Family: HC Operating temperature: -40...85°C Supply voltage: 2...6V DC Manufacturer series: HC Number of channels: 4 Case: SO16 Kind of package: tube Technology: TTL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDMQ8203 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-80V Drain current: 6/-6A Power dissipation: 2.5W Case: WDFN12 Gate-source voltage: ±20V On-state resistance: 323/191mΩ Mounting: SMD Gate charge: 19/5nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Semiconductor structure: common drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMQ86530L | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12 Type of transistor: N-MOSFET x4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 22W Case: MLP12 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level; MOSFET H-Bridge Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV1117ST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of integrated circuit: voltage regulator Output current: 1A Number of channels: 1 Output voltage: 3.3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV4274CST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of integrated circuit: voltage regulator Output current: 0.4A Number of channels: 1 Output voltage: 3.3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV4274AST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of integrated circuit: voltage regulator Output current: 0.4A Number of channels: 1 Output voltage: 3.3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV8664CST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of integrated circuit: voltage regulator Output current: 0.15A Number of channels: 1 Output voltage: 3.3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV4264-2ST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD Application: automotive industry Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV4264-2CST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD Application: automotive industry Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV4266-2CST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of integrated circuit: voltage regulator Output current: 0.15A Number of channels: 1 Output voltage: 3.3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SA2126-TL-H | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.8W Collector current: 3A Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar |
на замовлення 920 шт: термін постачання 14-30 дні (днів) |
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2SC6097-TL-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.8W Collector current: 3A Collector-emitter voltage: 60V Current gain: 300...600 Frequency: 390MHz Polarisation: bipolar |
на замовлення 700 шт: термін постачання 14-30 дні (днів) |
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| CAT25160VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: SPI Memory organisation: 2048x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CAT25160YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: SPI Memory organisation: 2048x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.2V Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Peak pulse power dissipation: 0.15W Case: SOD923 |
на замовлення 1085 шт: термін постачання 14-30 дні (днів) |
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| SZESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMBT589LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.31/0.71W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector current: 1A Collector-emitter voltage: 30V Current gain: 100...300 Frequency: 100MHz |
на замовлення 1401 шт: термін постачання 14-30 дні (днів) |
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| NSVMMBT589LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.31W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Application: automotive industry Collector current: 1A Collector-emitter voltage: 30V Current gain: 100...300 Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC74AC574DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; AC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: AC Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: reel; tape Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC74AC574DWG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Family: AC Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: tube Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC74AC574DWR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Supply voltage: 2...6V DC Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVBSS24NT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 75A Kind of package: reel; tape Application: automotive industry Max. load current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB521S30T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RB521S30T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NSVRB521S30T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 1A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NSVRB521S30T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDPC8016S | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8 Kind of channel: enhancement Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 25/67nC On-state resistance: 3.8/1.4mΩ Power dissipation: 21/42W Gate-source voltage: ±12V Drain current: 60/100A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMC8015L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Power dissipation: 24W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMC8010 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 120A; 54W; Power33 Kind of channel: enhancement Case: Power33 Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 94nC On-state resistance: 2mΩ Power dissipation: 54W Gate-source voltage: ±20V Drain current: 75A Drain-source voltage: 30V Pulsed drain current: 120A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMC8010DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 99A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 1.89mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 788A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDPC8011S | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8 Kind of channel: enhancement Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 19/64nC On-state resistance: 6/1.8mΩ Power dissipation: 1.6/2W Drain current: 20/60A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDPC8012S | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8 Kind of channel: enhancement Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 8/25nC On-state resistance: 7/2.2mΩ Power dissipation: 1.6/2W Drain current: 35/88A Drain-source voltage: 25V Semiconductor structure: asymmetric Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDPC8013S | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8 Kind of channel: enhancement Case: PQFN8 Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 13/44nC On-state resistance: 6.4/1.9mΩ Power dissipation: 1.6/2W Gate-source voltage: ±20V Drain current: 20/55A Drain-source voltage: 30V Semiconductor structure: asymmetric Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TIP121G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB Kind of package: tube Polarisation: bipolar Case: TO220AB Kind of transistor: Darlington Mounting: THT Type of transistor: NPN Power dissipation: 2W Collector current: 5A Collector-emitter voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NFVA25012NP2T | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; DIP; 50A Operating temperature: -40...150°C Mounting: THT Output current: 50A Application: automotive industry Case: DIP Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCV4275ADS50R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO Voltage drop: 0.5V Output voltage: 5V Output current: 0.45A Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 5.5...42V Manufacturer series: NCV4275A Integrated circuit features: RESET output Application: automotive industry |
на замовлення 1499 шт: термін постачання 14-30 дні (днів) |
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MRA4007T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.18V Max. load current: 30A Kind of package: reel; tape |
на замовлення 383 шт: термін постачання 14-30 дні (днів) |
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NRVA4007T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.18V Max. forward impulse current: 30A Kind of package: reel; tape Max. load current: 2A Application: automotive industry |
на замовлення 3987 шт: термін постачання 14-30 дні (днів) |
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SMBJ36A | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 42.1V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RSL10-002GEVB | ONSEMI |
Category: Development kits - othersDescription: Dev.kit: evaluation; prototype board; Comp: RSL10 Interface: GPIO; I2C; SPI; UART Kit contents: prototype board Components: RSL10 Type of development kit: evaluation Programmers and development kits features: Bluetooth board Connection: pin strips; pin strips; Pmod socket; USB micro |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSL10-SIP-001GEVB | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: RSL10 Interface: GPIO; I2C; SPI; UART Kit contents: prototype board Components: RSL10 Type of development kit: evaluation Programmers and development kits features: Bluetooth board Connection: pin strips; pin strips; USB micro |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LM2574DW-ADJR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Mounting: SMD Kind of package: reel; tape Number of channels: 1 Case: SO16-W Output current: 0.5A Output voltage: 1.23...37V DC Input voltage: 4.75...40V DC Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Topology: buck |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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LM2575T-3.3G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube Topology: buck Frequency: 42...63kHz Operating temperature: -40...125°C Number of channels: 1 Output current: 1A Output voltage: 3.3V DC Input voltage: 4.75...40V DC |
на замовлення 41 шт: термін постачання 14-30 дні (днів) |
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MMBFJ111 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 20mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -35V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 30Ω |
на замовлення 2997 шт: термін постачання 14-30 дні (днів) |
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J111 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Mounting: THT Type of transistor: N-JFET Polarisation: unipolar Gate-source voltage: -35V Drain current: 20mA Power dissipation: 0.625W Gate current: 50mA On-state resistance: 30Ω Kind of package: bulk Case: TO92 |
на замовлення 3812 шт: термін постачання 14-30 дні (днів) |
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UJ4C075060K4S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 20.6A Pulsed drain current: 62A Power dissipation: 155W Case: TO247-4 Gate-source voltage: -25...25V On-state resistance: 147mΩ Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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MMBFJ309LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 30mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 5093 шт: термін постачання 14-30 дні (днів) |
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J109 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 40mA Power dissipation: 0.625W Case: TO92 Gate-source voltage: -25V On-state resistance: 12Ω Mounting: THT Kind of package: tape Gate current: 10mA |
на замовлення 76 шт: термін постачання 14-30 дні (днів) |
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MMBF4416A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -35V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 1477 шт: термін постачання 14-30 дні (днів) |
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2SK932-24-TB-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 14.5mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 1992 шт: термін постачання 14-30 дні (днів) |
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MMBF4393LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 100Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 1066 шт: термін постачання 14-30 дні (днів) |
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MMBFJ202 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 900µA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -40V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 1241 шт: термін постачання 14-30 дні (днів) |
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MMBF4392LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 60Ω |
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В кошику од. на суму грн. |
| MM74HC240MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Quiescent current: 160µA
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| 1N5363BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
на замовлення 150 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.68 грн |
| 18+ | 23.89 грн |
| 20+ | 21.71 грн |
| 100+ | 15.03 грн |
| 1N5363BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| BAV23S |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
на замовлення 2800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.79 грн |
| 56+ | 7.52 грн |
| 72+ | 5.83 грн |
| 100+ | 5.38 грн |
| 500+ | 4.43 грн |
| 1000+ | 3.72 грн |
| 1500+ | 3.37 грн |
| BAV23CLT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
на замовлення 19 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 21.71 грн |
| NSVBAV23CLT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
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| SMBJ30A |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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| MC74HC157ADG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: data selector; multiplexer
Number of inputs: 2
Mounting: SMD
Family: HC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Manufacturer series: HC
Number of channels: 4
Case: SO16
Kind of package: tube
Technology: TTL
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: data selector; multiplexer
Number of inputs: 2
Mounting: SMD
Family: HC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Manufacturer series: HC
Number of channels: 4
Case: SO16
Kind of package: tube
Technology: TTL
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| FDMQ8203 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Gate charge: 19/5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Gate charge: 19/5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Semiconductor structure: common drain
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| FDMQ86530L |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Pulsed drain current: 50A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Pulsed drain current: 50A
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| NCV1117ST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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| NCV4274CST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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| NCV4274AST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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| NCV8664CST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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| NCV4264-2ST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
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| NCV4264-2CST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
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| NCV4266-2CST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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| 2SA2126-TL-H |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
на замовлення 920 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.37 грн |
| 19+ | 22.72 грн |
| 25+ | 20.04 грн |
| 100+ | 18.04 грн |
| 700+ | 17.12 грн |
| 2SC6097-TL-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.8W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 300...600
Frequency: 390MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.8W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 300...600
Frequency: 390MHz
Polarisation: bipolar
на замовлення 700 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.55 грн |
| 10+ | 60.97 грн |
| 100+ | 36.50 грн |
| 250+ | 30.07 грн |
| 500+ | 26.48 грн |
| 700+ | 25.06 грн |
| CAT25160VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: SPI
Memory organisation: 2048x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: SPI
Memory organisation: 2048x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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| CAT25160YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: SPI
Memory organisation: 2048x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: SPI
Memory organisation: 2048x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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| ESD9X5.0ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Case: SOD923
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Case: SOD923
на замовлення 1085 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.20 грн |
| 84+ | 5.01 грн |
| 100+ | 4.18 грн |
| 168+ | 2.49 грн |
| 208+ | 2.01 грн |
| 264+ | 1.59 грн |
| 500+ | 1.57 грн |
| SZESD9X5.0ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| MMBT589LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
на замовлення 1401 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.48 грн |
| 18+ | 24.22 грн |
| NSVMMBT589LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
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| MC74AC574DTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
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| MC74AC574DWG | ![]() |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: AC
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: AC
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| MC74AC574DWR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
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| NRVBSS24NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
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| RB521S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
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| RB521S30T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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| NSVRB521S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 1A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 1A
Application: automotive industry
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| NSVRB521S30T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| FDPC8016S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 25/67nC
On-state resistance: 3.8/1.4mΩ
Power dissipation: 21/42W
Gate-source voltage: ±12V
Drain current: 60/100A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 25/67nC
On-state resistance: 3.8/1.4mΩ
Power dissipation: 21/42W
Gate-source voltage: ±12V
Drain current: 60/100A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
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| FDMC8015L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 24W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 24W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 30A
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| FDMC8010 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 120A; 54W; Power33
Kind of channel: enhancement
Case: Power33
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 2mΩ
Power dissipation: 54W
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 30V
Pulsed drain current: 120A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 120A; 54W; Power33
Kind of channel: enhancement
Case: Power33
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 2mΩ
Power dissipation: 54W
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 30V
Pulsed drain current: 120A
Kind of package: reel; tape
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| FDMC8010DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 99A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 1.89mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 788A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 99A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 1.89mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 788A
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| FDPC8011S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 19/64nC
On-state resistance: 6/1.8mΩ
Power dissipation: 1.6/2W
Drain current: 20/60A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 19/64nC
On-state resistance: 6/1.8mΩ
Power dissipation: 1.6/2W
Drain current: 20/60A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
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| FDPC8012S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 8/25nC
On-state resistance: 7/2.2mΩ
Power dissipation: 1.6/2W
Drain current: 35/88A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 8/25nC
On-state resistance: 7/2.2mΩ
Power dissipation: 1.6/2W
Drain current: 35/88A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
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| FDPC8013S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13/44nC
On-state resistance: 6.4/1.9mΩ
Power dissipation: 1.6/2W
Gate-source voltage: ±20V
Drain current: 20/55A
Drain-source voltage: 30V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13/44nC
On-state resistance: 6.4/1.9mΩ
Power dissipation: 1.6/2W
Gate-source voltage: ±20V
Drain current: 20/55A
Drain-source voltage: 30V
Semiconductor structure: asymmetric
Kind of package: reel; tape
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| TIP121G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Kind of package: tube
Polarisation: bipolar
Case: TO220AB
Kind of transistor: Darlington
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 5A
Collector-emitter voltage: 80V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Kind of package: tube
Polarisation: bipolar
Case: TO220AB
Kind of transistor: Darlington
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 5A
Collector-emitter voltage: 80V
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| NFVA25012NP2T |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; DIP; 50A
Operating temperature: -40...150°C
Mounting: THT
Output current: 50A
Application: automotive industry
Case: DIP
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; DIP; 50A
Operating temperature: -40...150°C
Mounting: THT
Output current: 50A
Application: automotive industry
Case: DIP
Type of integrated circuit: driver
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| NCV4275ADS50R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...42V
Manufacturer series: NCV4275A
Integrated circuit features: RESET output
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...42V
Manufacturer series: NCV4275A
Integrated circuit features: RESET output
Application: automotive industry
на замовлення 1499 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.82 грн |
| 10+ | 88.53 грн |
| MRA4007T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 383 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.29 грн |
| 50+ | 8.44 грн |
| 66+ | 6.40 грн |
| 100+ | 5.73 грн |
| 250+ | 4.98 грн |
| NRVA4007T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
на замовлення 3987 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.89 грн |
| 73+ | 5.76 грн |
| 100+ | 4.84 грн |
| 500+ | 4.29 грн |
| SMBJ36A |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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| RSL10-002GEVB |
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Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; Pmod socket; USB micro
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; Pmod socket; USB micro
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од. на суму грн.
| RSL10-SIP-001GEVB |
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; USB micro
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; USB micro
товару немає в наявності
В кошику
од. на суму грн.
| LM2574DW-ADJR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Case: SO16-W
Output current: 0.5A
Output voltage: 1.23...37V DC
Input voltage: 4.75...40V DC
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Case: SO16-W
Output current: 0.5A
Output voltage: 1.23...37V DC
Input voltage: 4.75...40V DC
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Topology: buck
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.20 грн |
| LM2575T-3.3G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Topology: buck
Frequency: 42...63kHz
Operating temperature: -40...125°C
Number of channels: 1
Output current: 1A
Output voltage: 3.3V DC
Input voltage: 4.75...40V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Topology: buck
Frequency: 42...63kHz
Operating temperature: -40...125°C
Number of channels: 1
Output current: 1A
Output voltage: 3.3V DC
Input voltage: 4.75...40V DC
на замовлення 41 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 142.11 грн |
| 10+ | 121.94 грн |
| MMBFJ111 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
на замовлення 2997 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.08 грн |
| 20+ | 21.71 грн |
| 50+ | 15.03 грн |
| 100+ | 12.86 грн |
| 500+ | 9.27 грн |
| 1000+ | 9.19 грн |
| J111 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Power dissipation: 0.625W
Gate current: 50mA
On-state resistance: 30Ω
Kind of package: bulk
Case: TO92
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Power dissipation: 0.625W
Gate current: 50mA
On-state resistance: 30Ω
Kind of package: bulk
Case: TO92
на замовлення 3812 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.68 грн |
| 36+ | 11.69 грн |
| 41+ | 10.27 грн |
| 52+ | 8.18 грн |
| UJ4C075060K4S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 797.78 грн |
| 5+ | 655.61 грн |
| 10+ | 587.13 грн |
| 30+ | 556.23 грн |
| MMBFJ309LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 5093 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.19 грн |
| 35+ | 12.03 грн |
| 40+ | 10.52 грн |
| 48+ | 8.85 грн |
| 53+ | 7.93 грн |
| 100+ | 7.18 грн |
| 250+ | 6.93 грн |
| J109 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -25V
On-state resistance: 12Ω
Mounting: THT
Kind of package: tape
Gate current: 10mA
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -25V
On-state resistance: 12Ω
Mounting: THT
Kind of package: tape
Gate current: 10mA
на замовлення 76 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.38 грн |
| 23+ | 18.54 грн |
| 25+ | 17.71 грн |
| MMBF4416A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 1477 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.79 грн |
| 55+ | 7.68 грн |
| 100+ | 6.76 грн |
| 500+ | 6.43 грн |
| 1000+ | 6.01 грн |
| 2SK932-24-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 1992 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.28 грн |
| 17+ | 24.64 грн |
| 25+ | 21.63 грн |
| 100+ | 19.13 грн |
| MMBF4393LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 1066 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.79 грн |
| 30+ | 14.20 грн |
| 50+ | 11.02 грн |
| 100+ | 9.77 грн |
| 250+ | 8.10 грн |
| 500+ | 6.93 грн |
| 1000+ | 5.85 грн |
| MMBFJ202 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 900µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 900µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 1241 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.78 грн |
| 21+ | 20.21 грн |
| 25+ | 16.87 грн |
| 100+ | 9.02 грн |
| 500+ | 7.85 грн |
| MMBF4392LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 60Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 60Ω
товару немає в наявності
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од. на суму грн.




















