| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MOC3061SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3061M; 1.5kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Manufacturer series: MOC3061M Slew rate: 1.5kV/μs Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3083TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3083M; 1.5kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 6V Trigger current: 5mA Mounting: THT Manufacturer series: MOC3083M Slew rate: 1.5kV/μs Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC8050SR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Mounting: SMD Manufacturer series: MOC8050M Collector-emitter voltage: 80V CTR@If: 500%@10mA Kind of output: Darlington Insulation voltage: 4.17kV Max. off-state voltage: 3V Type of optocoupler: optocoupler Turn-on time: 8.5µs Case: PDIP6 Turn-off time: 95µs Number of channels: 1 |
на замовлення 965 шт: термін постачання 14-30 дні (днів) |
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MOC3041SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 400V Kind of output: triac; zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Manufacturer series: MOC304XM Slew rate: 2kV/μs Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3041SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 400V Kind of output: triac; zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Manufacturer series: MOC304XM Slew rate: 2kV/μs Number of channels: 1 |
на замовлення 708 шт: термін постачання 14-30 дні (днів) |
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FXMA2102UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Mounting: SMD Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Integrated circuit features: 5V tolerant on inputs/outputs; open drain output Number of inputs: 2 Kind of package: reel; tape Case: UQFN8 Number of outputs: 2 Frequency: 37MHz |
на замовлення 122 шт: термін постачання 14-30 дні (днів) |
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| 4N35TVM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: PDIP6 Turn-on time: 2µs Turn-off time: 2µs Manufacturer series: 4N3X Max. off-state voltage: 6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FGD5T120SH | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 28W Case: DPAK Mounting: SMD Gate charge: 6.7nC Features of semiconductor devices: logic level Version: ESD Pulsed collector current: 12.5A Application: ignition systems Kind of package: reel; tape Gate-emitter voltage: ±25V Collector current: 5A Collector-emitter voltage: 1.2kV |
на замовлення 2480 шт: термін постачання 14-30 дні (днів) |
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MOC3022SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; without zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM Slew rate: 1kV/μs Output voltage: 400V |
на замовлення 710 шт: термін постачання 14-30 дні (днів) |
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| MOC3022TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; without zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM Slew rate: 1kV/μs Output voltage: 400V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4001G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
на замовлення 1847 шт: термін постачання 14-30 дні (днів) |
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KSC945YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed Mounting: THT Type of transistor: NPN Current gain: 120...240 Kind of package: Ammo Pack Case: TO92 Formed Frequency: 300MHz Collector current: 0.15A Collector-emitter voltage: 50V Power dissipation: 0.25W Polarisation: bipolar |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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KSB772YS | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO Power dissipation: 1W Polarisation: bipolar Pulsed collector current: 7A Type of transistor: PNP Current gain: 160...320 Kind of package: bulk Case: TO126ISO Frequency: 80MHz Collector current: 3A Mounting: THT Collector-emitter voltage: 30V |
на замовлення 1370 шт: термін постачання 14-30 дні (днів) |
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KSC1815YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed Type of transistor: NPN Current gain: 120...240 Kind of package: Ammo Pack Case: TO92 Formed Frequency: 80MHz Collector current: 0.15A Mounting: THT Collector-emitter voltage: 50V Power dissipation: 0.4W Polarisation: bipolar |
на замовлення 1301 шт: термін постачання 14-30 дні (днів) |
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SBC857BWT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 763 шт: термін постачання 14-30 дні (днів) |
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KSD1691GS | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 20W Case: TO126ISO Current gain: 200...400 Mounting: THT Kind of package: bulk Pulsed collector current: 8A |
на замовлення 1914 шт: термін постачання 14-30 дні (днів) |
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| KSD1691GSTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 20W Case: TO126ISO Current gain: 200...400 Mounting: THT Kind of package: tube Pulsed collector current: 8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KSD1691YS | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 20W Case: TO126ISO Pulsed collector current: 8A Current gain: 160...320 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KSD1691YSTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 20W Case: TO126ISO Pulsed collector current: 8A Current gain: 160...320 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSD1616AGBU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Mounting: THT Collector current: 1A Collector-emitter voltage: 60V Power dissipation: 0.75W Polarisation: bipolar Pulsed collector current: 2A Type of transistor: NPN Current gain: 200...400 Kind of package: bulk Case: TO92 Frequency: 160MHz |
на замовлення 3379 шт: термін постачання 14-30 дні (днів) |
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2N7002 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A |
на замовлення 18105 шт: термін постачання 14-30 дні (днів) |
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NLSV1T34DFT2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Mounting: SMD Supply voltage: 0.9...4.5V DC Operating temperature: -40...85°C Quiescent current: 2µA Kind of package: reel; tape Case: SOT353 Number of outputs: 1 |
на замовлення 152 шт: термін постачання 14-30 дні (днів) |
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1N4004G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
на замовлення 514 шт: термін постачання 14-30 дні (днів) |
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6N136VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 250ns Turn-off time: 260ns Max. off-state voltage: 5V Collector current: 8mA Manufacturer series: 6N136 Number of pins: 8 |
на замовлення 284 шт: термін постачання 14-30 дні (днів) |
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6N137SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 30ns Manufacturer series: 6N137M Insulation voltage: 5kV |
на замовлення 994 шт: термін постачання 14-30 дні (днів) |
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| 6N136SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; 5kV Type of optocoupler: optocoupler Insulation voltage: 5kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FXMA2104UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 4 Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of output: open drain Operating temperature: -40...85°C Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Number of inputs: 4 Kind of package: reel; tape Case: MLP12 Number of outputs: 4 Frequency: 26MHz |
на замовлення 3606 шт: термін постачання 14-30 дні (днів) |
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1N4005G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Mounting: THT Max. forward impulse current: 30A Manufacturer standard package: 1000pcs. Max. forward voltage: 1.1V Max. off-state voltage: 0.6kV Load current: 1A Kind of package: bulk Semiconductor structure: single diode Case: CASE59 Type of diode: rectifying |
на замовлення 2108 шт: термін постачання 14-30 дні (днів) |
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UF4007 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DO41 Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 75µA Kind of package: reel; tape Power dissipation: 2.08W Capacitance: 17pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FGH40N60SMD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 120A Gate-emitter voltage: ±20V Gate charge: 119nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGAF40N60SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 58W; TO3PF Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 58W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGAF40N60UFTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 40W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 77nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | |||||||||||||||||||
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FGB20N60SFD-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 63nC Version: ESD Features of semiconductor devices: logic level Pulsed collector current: 60A Application: ignition systems Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FGA40N65SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 174W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 174W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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| FGH60T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| FGH60T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 79nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SHDF-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Pulsed collector current: 120A Mounting: THT Gate charge: 68nC Kind of package: tube Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL431ACLPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431ACLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431BCLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431BILPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431CDR2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431CLPRPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MPSA42 | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Frequency: 50MHz Kind of package: bulk |
на замовлення 426 шт: термін постачання 14-30 дні (днів) |
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1N4733A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 5.1V; DO41; single diode; bulk; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Mounting: THT Tolerance: ±5% Case: DO41 Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N47xxA |
на замовлення 3531 шт: термін постачання 14-30 дні (днів) |
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1N4749A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 24V; DO41; single diode; bulk; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N47xxA |
на замовлення 344 шт: термін постачання 14-30 дні (днів) |
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BAS16WT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SC70 Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF |
на замовлення 2420 шт: термін постачання 14-30 дні (днів) |
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BAS16XV2T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS16XV2T5G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 2pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 0.3A Kind of package: reel; tape Capacitance: 7.6pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A |
на замовлення 35947 шт: термін постачання 14-30 дні (днів) |
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FXL5T244BQX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 5 Operating temperature: -40...85°C Number of inputs: 5 Kind of package: reel; tape Case: DQFN14 Number of outputs: 5 Mounting: SMD Supply voltage: 1.1...3.6V DC |
на замовлення 71 шт: термін постачання 14-30 дні (днів) |
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MC14073BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Operating temperature: -55...125°C Delay time: 130ns Mounting: SMD Kind of gate: AND Type of integrated circuit: digital Technology: CMOS Number of inputs: 3 Kind of package: tube Case: SO14 Family: HEF4000B Number of channels: triple; 3 |
на замовлення 5384 шт: термін постачання 14-30 дні (днів) |
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BC848BWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 37745 шт: термін постачання 14-30 дні (днів) |
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MC74ACT245DWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Case: SO20 Operating temperature: -40...85°C Technology: CMOS; TTL Number of channels: 8 Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: ACT Kind of output: 3-state |
на замовлення 648 шт: термін постачання 14-30 дні (днів) |
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SMMBT2907ALT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
на замовлення 182 шт: термін постачання 14-30 дні (днів) |
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SMMBT2907ALT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMMBT3906LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
на замовлення 1101 шт: термін постачання 14-30 дні (днів) |
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SMMBT4403LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| MOC3061SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3061M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC3061M
Slew rate: 1.5kV/μs
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3061M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC3061M
Slew rate: 1.5kV/μs
Number of channels: 1
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В кошику
од. на суму грн.
| MOC3083TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3083M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3083M
Slew rate: 1.5kV/μs
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3083M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3083M
Slew rate: 1.5kV/μs
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| MOC8050SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: SMD
Manufacturer series: MOC8050M
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 8.5µs
Case: PDIP6
Turn-off time: 95µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: SMD
Manufacturer series: MOC8050M
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 8.5µs
Case: PDIP6
Turn-off time: 95µs
Number of channels: 1
на замовлення 965 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.22 грн |
| 10+ | 42.27 грн |
| 25+ | 39.25 грн |
| MOC3041SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| MOC3041SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Number of channels: 1
на замовлення 708 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.51 грн |
| 10+ | 42.35 грн |
| 30+ | 36.15 грн |
| 50+ | 33.63 грн |
| 100+ | 30.53 грн |
| 300+ | 26.33 грн |
| 500+ | 24.74 грн |
| FXMA2102UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Number of inputs: 2
Kind of package: reel; tape
Case: UQFN8
Number of outputs: 2
Frequency: 37MHz
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Number of inputs: 2
Kind of package: reel; tape
Case: UQFN8
Number of outputs: 2
Frequency: 37MHz
на замовлення 122 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.90 грн |
| 13+ | 33.13 грн |
| 20+ | 28.43 грн |
| 25+ | 27.34 грн |
| 4N35TVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 2µs
Turn-off time: 2µs
Manufacturer series: 4N3X
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 2µs
Turn-off time: 2µs
Manufacturer series: 4N3X
Max. off-state voltage: 6V
товару немає в наявності
В кошику
од. на суму грн.
| FGD5T120SH |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 28W
Case: DPAK
Mounting: SMD
Gate charge: 6.7nC
Features of semiconductor devices: logic level
Version: ESD
Pulsed collector current: 12.5A
Application: ignition systems
Kind of package: reel; tape
Gate-emitter voltage: ±25V
Collector current: 5A
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 28W
Case: DPAK
Mounting: SMD
Gate charge: 6.7nC
Features of semiconductor devices: logic level
Version: ESD
Pulsed collector current: 12.5A
Application: ignition systems
Kind of package: reel; tape
Gate-emitter voltage: ±25V
Collector current: 5A
Collector-emitter voltage: 1.2kV
на замовлення 2480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.34 грн |
| 10+ | 92.25 грн |
| 100+ | 65.41 грн |
| MOC3022SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
Output voltage: 400V
на замовлення 710 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.38 грн |
| 13+ | 34.72 грн |
| 25+ | 31.70 грн |
| 50+ | 29.44 грн |
| 100+ | 27.26 грн |
| 500+ | 23.73 грн |
| MOC3022TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
Output voltage: 400V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4001G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
на замовлення 1847 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 54+ | 7.88 грн |
| 75+ | 5.62 грн |
| 100+ | 4.82 грн |
| 250+ | 3.87 грн |
| 500+ | 3.28 грн |
| 1000+ | 3.20 грн |
| KSC945YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed
Mounting: THT
Type of transistor: NPN
Current gain: 120...240
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 300MHz
Collector current: 0.15A
Collector-emitter voltage: 50V
Power dissipation: 0.25W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed
Mounting: THT
Type of transistor: NPN
Current gain: 120...240
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 300MHz
Collector current: 0.15A
Collector-emitter voltage: 50V
Power dissipation: 0.25W
Polarisation: bipolar
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.97 грн |
| 39+ | 10.99 грн |
| KSB772YS |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Power dissipation: 1W
Polarisation: bipolar
Pulsed collector current: 7A
Type of transistor: PNP
Current gain: 160...320
Kind of package: bulk
Case: TO126ISO
Frequency: 80MHz
Collector current: 3A
Mounting: THT
Collector-emitter voltage: 30V
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Power dissipation: 1W
Polarisation: bipolar
Pulsed collector current: 7A
Type of transistor: PNP
Current gain: 160...320
Kind of package: bulk
Case: TO126ISO
Frequency: 80MHz
Collector current: 3A
Mounting: THT
Collector-emitter voltage: 30V
на замовлення 1370 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.77 грн |
| 12+ | 35.47 грн |
| 100+ | 24.24 грн |
| 500+ | 18.79 грн |
| 1000+ | 18.11 грн |
| KSC1815YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Type of transistor: NPN
Current gain: 120...240
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 80MHz
Collector current: 0.15A
Mounting: THT
Collector-emitter voltage: 50V
Power dissipation: 0.4W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Type of transistor: NPN
Current gain: 120...240
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 80MHz
Collector current: 0.15A
Mounting: THT
Collector-emitter voltage: 50V
Power dissipation: 0.4W
Polarisation: bipolar
на замовлення 1301 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.97 грн |
| 36+ | 11.66 грн |
| 100+ | 6.92 грн |
| 200+ | 5.90 грн |
| 500+ | 4.74 грн |
| 1000+ | 4.00 грн |
| SBC857BWT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 100+ | 4.97 грн |
| 500+ | 3.18 грн |
| KSD1691GS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
на замовлення 1914 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 100.25 грн |
| 6+ | 73.80 грн |
| 10+ | 64.16 грн |
| 25+ | 52.75 грн |
| 100+ | 39.92 грн |
| 500+ | 35.39 грн |
| KSD1691GSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
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| KSD1691YS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
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| KSD1691YSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
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| KSD1616AGBU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Mounting: THT
Collector current: 1A
Collector-emitter voltage: 60V
Power dissipation: 0.75W
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: NPN
Current gain: 200...400
Kind of package: bulk
Case: TO92
Frequency: 160MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Mounting: THT
Collector current: 1A
Collector-emitter voltage: 60V
Power dissipation: 0.75W
Polarisation: bipolar
Pulsed collector current: 2A
Type of transistor: NPN
Current gain: 200...400
Kind of package: bulk
Case: TO92
Frequency: 160MHz
на замовлення 3379 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 18+ | 24.32 грн |
| 20+ | 21.13 грн |
| 100+ | 12.66 грн |
| 500+ | 9.14 грн |
| 1000+ | 8.05 грн |
| 2000+ | 7.63 грн |
| 2N7002 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
на замовлення 18105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.45 грн |
| 55+ | 7.72 грн |
| 71+ | 5.97 грн |
| 100+ | 5.33 грн |
| 500+ | 4.03 грн |
| 1000+ | 3.67 грн |
| NLSV1T34DFT2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Supply voltage: 0.9...4.5V DC
Operating temperature: -40...85°C
Quiescent current: 2µA
Kind of package: reel; tape
Case: SOT353
Number of outputs: 1
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Supply voltage: 0.9...4.5V DC
Operating temperature: -40...85°C
Quiescent current: 2µA
Kind of package: reel; tape
Case: SOT353
Number of outputs: 1
на замовлення 152 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.61 грн |
| 10+ | 44.62 грн |
| 25+ | 38.75 грн |
| 100+ | 33.46 грн |
| 1N4004G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
на замовлення 514 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.74 грн |
| 57+ | 7.38 грн |
| 65+ | 6.46 грн |
| 85+ | 4.98 грн |
| 100+ | 4.47 грн |
| 500+ | 3.14 грн |
| 6N136VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 250ns
Turn-off time: 260ns
Max. off-state voltage: 5V
Collector current: 8mA
Manufacturer series: 6N136
Number of pins: 8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 250ns
Turn-off time: 260ns
Max. off-state voltage: 5V
Collector current: 8mA
Manufacturer series: 6N136
Number of pins: 8
на замовлення 284 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 186.95 грн |
| 200+ | 150.96 грн |
| 6N137SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Insulation voltage: 5kV
на замовлення 994 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.96 грн |
| 25+ | 39.08 грн |
| 50+ | 36.82 грн |
| 100+ | 34.13 грн |
| 250+ | 30.44 грн |
| 750+ | 28.85 грн |
| 6N136SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
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| FXMA2104UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: open drain
Operating temperature: -40...85°C
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Number of inputs: 4
Kind of package: reel; tape
Case: MLP12
Number of outputs: 4
Frequency: 26MHz
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: open drain
Operating temperature: -40...85°C
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Number of inputs: 4
Kind of package: reel; tape
Case: MLP12
Number of outputs: 4
Frequency: 26MHz
на замовлення 3606 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.25 грн |
| 1N4005G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Mounting: THT
Max. forward impulse current: 30A
Manufacturer standard package: 1000pcs.
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE59
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Mounting: THT
Max. forward impulse current: 30A
Manufacturer standard package: 1000pcs.
Max. forward voltage: 1.1V
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE59
Type of diode: rectifying
на замовлення 2108 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.45 грн |
| 55+ | 7.72 грн |
| 79+ | 5.37 грн |
| 100+ | 4.64 грн |
| 500+ | 3.34 грн |
| 750+ | 3.08 грн |
| 1000+ | 2.92 грн |
| 2000+ | 2.56 грн |
| UF4007 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO41
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 75µA
Kind of package: reel; tape
Power dissipation: 2.08W
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO41
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 75µA
Kind of package: reel; tape
Power dissipation: 2.08W
Capacitance: 17pF
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| FGH40N60SMD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Gate charge: 119nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Gate charge: 119nC
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| FGAF40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 58W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 58W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
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| FGAF40N60UFTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 40W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 40W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
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Мінімальне замовлення: 360 шт
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| FGB20N60SFD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Version: ESD
Features of semiconductor devices: logic level
Pulsed collector current: 60A
Application: ignition systems
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Version: ESD
Features of semiconductor devices: logic level
Pulsed collector current: 60A
Application: ignition systems
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
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| FGA40N65SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 364.88 грн |
| 10+ | 212.18 грн |
| FGH60T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
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Мінімальне замовлення: 450 шт
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| FGH60T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
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| FGH40T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Gate-emitter voltage: ±20V
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| FGH40T65SHDF-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Gate-emitter voltage: ±20V
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| FGH40T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
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| TL431ACLPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431ACLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431BCLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431BILPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431CDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| TL431CLPRPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| MPSA42 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
на замовлення 426 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| 33+ | 13.08 грн |
| 100+ | 7.63 грн |
| 250+ | 6.46 грн |
| 1N4733A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Tolerance: ±5%
Case: DO41
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Tolerance: ±5%
Case: DO41
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
на замовлення 3531 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 42+ | 10.06 грн |
| 49+ | 8.72 грн |
| 100+ | 5.53 грн |
| 250+ | 4.75 грн |
| 500+ | 4.23 грн |
| 1000+ | 3.78 грн |
| 3000+ | 3.20 грн |
| 1N4749A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
на замовлення 344 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 55+ | 7.72 грн |
| 62+ | 6.79 грн |
| 91+ | 4.65 грн |
| 107+ | 3.95 грн |
| 250+ | 3.42 грн |
| BAS16WT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SC70
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SC70
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
на замовлення 2420 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 99+ | 4.28 грн |
| 178+ | 2.36 грн |
| 500+ | 1.63 грн |
| 1000+ | 1.42 грн |
| BAS16XV2T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
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| BAS16XV2T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
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| BAT54LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
на замовлення 35947 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.84 грн |
| 91+ | 4.61 грн |
| 148+ | 2.84 грн |
| 250+ | 2.50 грн |
| 500+ | 2.21 грн |
| 1000+ | 1.86 грн |
| 3000+ | 1.43 грн |
| 9000+ | 1.22 грн |
| FXL5T244BQX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Operating temperature: -40...85°C
Number of inputs: 5
Kind of package: reel; tape
Case: DQFN14
Number of outputs: 5
Mounting: SMD
Supply voltage: 1.1...3.6V DC
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Operating temperature: -40...85°C
Number of inputs: 5
Kind of package: reel; tape
Case: DQFN14
Number of outputs: 5
Mounting: SMD
Supply voltage: 1.1...3.6V DC
на замовлення 71 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.83 грн |
| 10+ | 56.19 грн |
| 25+ | 52.00 грн |
| MC14073BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Mounting: SMD
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: triple; 3
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Mounting: SMD
Kind of gate: AND
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: triple; 3
на замовлення 5384 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.09 грн |
| 19+ | 22.31 грн |
| 25+ | 19.46 грн |
| 55+ | 16.35 грн |
| 110+ | 13.50 грн |
| 275+ | 10.65 грн |
| 550+ | 10.40 грн |
| BC848BWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 37745 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.13 грн |
| 72+ | 5.87 грн |
| 84+ | 5.03 грн |
| 154+ | 2.73 грн |
| 500+ | 1.75 грн |
| 1000+ | 1.53 грн |
| 3000+ | 1.29 грн |
| 6000+ | 1.17 грн |
| 9000+ | 1.12 грн |
| MC74ACT245DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Case: SO20
Operating temperature: -40...85°C
Technology: CMOS; TTL
Number of channels: 8
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Case: SO20
Operating temperature: -40...85°C
Technology: CMOS; TTL
Number of channels: 8
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
на замовлення 648 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.93 грн |
| 10+ | 46.46 грн |
| 25+ | 42.52 грн |
| SMMBT2907ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
на замовлення 182 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 68+ | 6.21 грн |
| 98+ | 4.29 грн |
| 113+ | 3.72 грн |
| SMMBT2907ALT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| SMMBT3906LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
на замовлення 1101 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.84 грн |
| 62+ | 6.79 грн |
| 91+ | 4.63 грн |
| 108+ | 3.92 грн |
| 500+ | 2.68 грн |
| 1000+ | 2.31 грн |
| SMMBT4403LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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