| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MC79L15ACPRPG | ONSEMI |
 Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| ISL9V3040D3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ISL9V3040S3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ISL9V5045S3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 43A Power dissipation: 300W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MC34072ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO8 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: dual |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MC34072AMTTBG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; WQFN10; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: WQFN10 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: dual |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MC34072VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO8 Slew rate: 13V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: dual |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA143EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963 Case: SOT963 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 269mW Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA143EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA143EF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA143TDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 160...250 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA143TF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 160...250 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA144EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ Case: SOT963 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 269mW Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA144EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA144TF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 120...250 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA144WDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 47kΩ Base-emitter resistor: 22kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSBA144WF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Base-emitter resistor: 22kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BD679AS | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO126 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 40W Case: TO126 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| LM2594DADJR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TL331SN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TL331SN4T1G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TL331VSN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| AFGY160T65SPD-B4 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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HUF75645P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 238nC Kind of package: tube Kind of channel: enhancement |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| NVMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Power dissipation: 58W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BD138G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO225 Current gain: 40...250 Mounting: THT Power dissipation: 12.5W Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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|
PN2222ATFR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Mounting: THT Case: TO92 Formed Collector current: 0.6A Power dissipation: 0.625W Current gain: 100...300 Collector-emitter voltage: 40V Kind of package: reel; tape Frequency: 300MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| LM337BD2TR4G | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| LM337BTG | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: TO220AB Mounting: THT Number of channels: 1 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| LM337D2TR4G | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MC33035DWR2G | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Supply voltage: 0...40V DC Operating temperature: -40...85°C Topology: H-bridge Kind of package: reel; tape Mounting: SMD Case: SO24 Output current: 0.1A Number of channels: 3 Operating voltage: 10...30V DC Application: universal Kind of integrated circuit: brushless motor controller Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSVBCP53-16T3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NVBG025N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 284A Power dissipation: 197W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
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В кошику од. на суму грн. | |||||||||||
| LM317D2TR4G | ONSEMI |
 Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BC848CDW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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HUF75545P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 73A Power dissipation: 270W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhancement |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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| SMMBTA64LT1G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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FDN358P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 5.6nC Technology: PowerTrench® |
на замовлення 2331 шт: термін постачання 21-30 дні (днів) |
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| NJVMJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSVBC850BLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSVBC850CLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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2SD1048-6-TB-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.7A Power dissipation: 0.2W Case: SC59 Mounting: SMD Kind of package: reel; tape Current gain: 200...400 Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 2SD1048-7-TB-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.7A Power dissipation: 0.2W Case: SC59 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 2SD1624S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 2SD1624T-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NCV7808BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 1A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NCV7808BD2TR4G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MJD112T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Polarisation: bipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MJD112RLG | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Polarisation: bipolar Kind of package: reel; tape |
товару немає в наявності |
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| NJVMJD112G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: tube Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||
| NJVMJD112T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| FCP110N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 105A Gate charge: 98nC |
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| NCV4275CDT33RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.45A; DPAK4; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: DPAK4 Number of channels: 1 Kind of package: reel; tape Output current: 0.45A Output voltage: 3.3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
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| NCV4275CDT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; DPAK4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.45A Case: DPAK4 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| MUR260RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 Reverse recovery time: 75ns |
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| MMBT3904TT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Kind of package: reel; tape Polarisation: bipolar Type of transistor: NPN Case: SC75; SOT416 Mounting: SMD Collector current: 0.2A Power dissipation: 0.2W Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz |
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| FDMA1024NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 6A Power dissipation: 1.4W Case: WDFN6 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTHL060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 33A Pulsed drain current: 143A Power dissipation: 88W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 49mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement |
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| NVBG060N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 130A Power dissipation: 85W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| NTH4L060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 152A Power dissipation: 88W Case: TO247-4 Gate-source voltage: -8...22V On-state resistance: 50mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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В кошику од. на суму грн. |
| MC79L15ACPRPG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| ISL9V3040D3ST-F085C |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| ISL9V3040S3ST-F085C |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| ISL9V5045S3ST-F085C |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| MC34072ADR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
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| MC34072AMTTBG |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; WQFN10; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: WQFN10
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; WQFN10; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: WQFN10
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
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| MC34072VDR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
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| NSBA143EDP6T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143EDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143EF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143TDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143TF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144EDP6T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144EDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144TF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 120...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 120...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144WDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144WF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| BD679AS |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Mounting: THT
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Mounting: THT
Kind of package: bulk
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| LM2594DADJR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
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| TL331SN4T3G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331SN4T1G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331VSN4T3G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| AFGY160T65SPD-B4 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
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| HUF75645P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 238nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 238nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 167.45 грн |
| 7+ | 142.06 грн |
| 19+ | 134.12 грн |
| NVMJST2D6N08HTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BD138G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
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| PN2222ATFR |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Case: TO92 Formed
Collector current: 0.6A
Power dissipation: 0.625W
Current gain: 100...300
Collector-emitter voltage: 40V
Kind of package: reel; tape
Frequency: 300MHz
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Case: TO92 Formed
Collector current: 0.6A
Power dissipation: 0.625W
Current gain: 100...300
Collector-emitter voltage: 40V
Kind of package: reel; tape
Frequency: 300MHz
Polarisation: bipolar
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од. на суму грн.
| LM337BD2TR4G |
|
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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| LM337BTG |
|
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
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| LM337D2TR4G |
|
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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од. на суму грн.
| MC33035DWR2G |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Topology: H-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Output current: 0.1A
Number of channels: 3
Operating voltage: 10...30V DC
Application: universal
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Topology: H-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Output current: 0.1A
Number of channels: 3
Operating voltage: 10...30V DC
Application: universal
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
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| NSVBCP53-16T3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| NVBG025N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| LM317D2TR4G | |
|
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| BC848CDW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| HUF75545P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.09 грн |
| 8+ | 130.94 грн |
| 20+ | 123.80 грн |
| 50+ | 119.04 грн |
| SMMBTA64LT1G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FDN358P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5.6nC
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5.6nC
Technology: PowerTrench®
на замовлення 2331 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.17 грн |
| 14+ | 29.36 грн |
| 50+ | 22.30 грн |
| 67+ | 13.97 грн |
| 184+ | 13.25 грн |
| NJVMJD127T4G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NSVBC850BLT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NSVBC850CLT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| 2SD1048-6-TB-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.7A
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Current gain: 200...400
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.7A
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Current gain: 200...400
Frequency: 250MHz
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| 2SD1048-7-TB-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.7A
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.7A
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
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| 2SD1624S-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
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| 2SD1624T-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
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| NCV7808BDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV7808BD2TR4G |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| MJD112T4G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
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| MJD112RLG |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
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| NJVMJD112G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Application: automotive industry
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| NJVMJD112T4G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FCP110N65F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
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| NCV4275CDT33RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.45A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: DPAK4
Number of channels: 1
Kind of package: reel; tape
Output current: 0.45A
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.45A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: DPAK4
Number of channels: 1
Kind of package: reel; tape
Output current: 0.45A
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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| NCV4275CDT50RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.45A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.45A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| MUR260RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 75ns
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| MMBT3904TT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Kind of package: reel; tape
Polarisation: bipolar
Type of transistor: NPN
Case: SC75; SOT416
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.2W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Kind of package: reel; tape
Polarisation: bipolar
Type of transistor: NPN
Case: SC75; SOT416
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.2W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
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| FDMA1024NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 6A
Power dissipation: 1.4W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 6A
Power dissipation: 1.4W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTHL060N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Pulsed drain current: 143A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Pulsed drain current: 143A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
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| NVBG060N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 130A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 130A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NTH4L060N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 152A
Power dissipation: 88W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 152A
Power dissipation: 88W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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