| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MOC8050SR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Mounting: SMD Manufacturer series: MOC8050M Collector-emitter voltage: 80V CTR@If: 500%@10mA Kind of output: Darlington Insulation voltage: 4.17kV Max. off-state voltage: 3V Type of optocoupler: optocoupler Turn-on time: 8.5µs Case: PDIP6 Turn-off time: 95µs Number of channels: 1 |
на замовлення 971 шт: термін постачання 14-30 дні (днів) |
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MOC3041SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC304XM Slew rate: 2kV/μs Output voltage: 400V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3041SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC304XM Slew rate: 2kV/μs Output voltage: 400V |
на замовлення 719 шт: термін постачання 14-30 дні (днів) |
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FXMA2102UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Integrated circuit features: 5V tolerant on inputs/outputs; open drain output Case: UQFN8 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 2 Number of inputs: 2 Frequency: 37MHz |
на замовлення 122 шт: термін постачання 14-30 дні (днів) |
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| 4N35TVM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Collector-emitter voltage: 30V CTR@If: 100%@10mA Kind of output: transistor Insulation voltage: 4.17kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 2µs Case: PDIP6 Turn-off time: 2µs Number of channels: 1 Mounting: THT Manufacturer series: 4N3X |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FGD5T120SH | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 5A Power dissipation: 28W Case: DPAK Gate-emitter voltage: ±25V Pulsed collector current: 12.5A Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Features of semiconductor devices: logic level Version: ESD Application: ignition systems |
на замовлення 2489 шт: термін постачання 14-30 дні (днів) |
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MOC3022SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; without zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM Slew rate: 1kV/μs Output voltage: 400V |
на замовлення 715 шт: термін постачання 14-30 дні (днів) |
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| MOC3022TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; without zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM Slew rate: 1kV/μs Output voltage: 400V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4001G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
на замовлення 117 шт: термін постачання 14-30 дні (днів) |
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KSC945YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.25W Case: TO92 Formed Current gain: 120...240 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
на замовлення 382 шт: термін постачання 14-30 дні (днів) |
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KSB772YS | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 3A Power dissipation: 1W Case: TO126ISO Pulsed collector current: 7A Current gain: 160...320 Mounting: THT Kind of package: bulk Frequency: 80MHz |
на замовлення 1389 шт: термін постачання 14-30 дні (днів) |
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| KSE13003H2ASTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO Mounting: THT Type of transistor: NPN Case: TO126ISO Collector current: 1.5A Power dissipation: 20W Pulsed collector current: 3A Current gain: 14...21 Collector-emitter voltage: 400V Frequency: 4MHz Kind of package: tube Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSC1815YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed Case: TO92 Formed Mounting: THT Current gain: 120...240 Kind of package: Ammo Pack Frequency: 80MHz Collector current: 0.15A Collector-emitter voltage: 50V Power dissipation: 0.4W Polarisation: bipolar Type of transistor: NPN |
на замовлення 2309 шт: термін постачання 14-30 дні (днів) |
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SBC857BWT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 763 шт: термін постачання 14-30 дні (днів) |
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CNY173M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 840 шт: термін постачання 14-30 дні (днів) |
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CNY173SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 867 шт: термін постачання 14-30 дні (днів) |
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KSD1691GS | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 20W Case: TO126ISO Current gain: 200...400 Mounting: THT Kind of package: bulk Pulsed collector current: 8A |
на замовлення 1920 шт: термін постачання 14-30 дні (днів) |
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| KSD1691GSTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Pulsed collector current: 8A Type of transistor: NPN Current gain: 200...400 Kind of package: tube Case: TO126ISO Collector current: 5A Collector-emitter voltage: 60V Power dissipation: 20W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KSD1691YS | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Pulsed collector current: 8A Type of transistor: NPN Current gain: 160...320 Kind of package: bulk Case: TO126ISO Collector current: 5A Collector-emitter voltage: 60V Power dissipation: 20W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KSD1691YSTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Pulsed collector current: 8A Type of transistor: NPN Current gain: 160...320 Kind of package: tube Case: TO126ISO Collector current: 5A Collector-emitter voltage: 60V Power dissipation: 20W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSD1616AGBU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.75W Case: TO92 Current gain: 200...400 Mounting: THT Kind of package: bulk Frequency: 160MHz Pulsed collector current: 2A |
на замовлення 6509 шт: термін постачання 14-30 дні (днів) |
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2N7002 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 0.8A Kind of package: reel; tape |
на замовлення 8080 шт: термін постачання 14-30 дні (днів) |
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NLSV1T34DFT2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Case: SOT353 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 2µA Supply voltage: 0.9...4.5V DC Number of outputs: 1 |
на замовлення 657 шт: термін постачання 14-30 дні (днів) |
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1N4004G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
на замовлення 514 шт: термін постачання 14-30 дні (днів) |
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6N136VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 250ns Turn-off time: 260ns Max. off-state voltage: 5V Collector current: 8mA Manufacturer series: 6N136 Number of pins: 8 |
на замовлення 284 шт: термін постачання 14-30 дні (днів) |
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6N137SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 30ns Manufacturer series: 6N137M |
на замовлення 1251 шт: термін постачання 14-30 дні (днів) |
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| 6N136SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; 5kV Type of optocoupler: optocoupler Insulation voltage: 5kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FXMA2104UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 4 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Case: MLP12 Kind of output: open drain Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 4 Number of inputs: 4 Frequency: 26MHz |
на замовлення 3621 шт: термін постачання 14-30 дні (днів) |
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1N4005G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Case: CASE59 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Load current: 1A Quantity in set/package: 1000pcs. Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Kind of package: bulk |
на замовлення 2288 шт: термін постачання 14-30 дні (днів) |
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UF4007 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Leakage current: 75µA Capacitance: 17pF Power dissipation: 2.08W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FGH40N60SMD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Power dissipation: 174W Case: TO247-3 Mounting: THT Gate charge: 119nC Kind of package: tube Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector current: 40A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGAF40N60SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 58W; TO3PF Type of transistor: IGBT Power dissipation: 58W Case: TO3PF Mounting: THT Gate charge: 119nC Kind of package: tube Pulsed collector current: 120A Gate-emitter voltage: ±20V Collector current: 40A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGAF40N60UFTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 77nC Kind of package: tube Pulsed collector current: 160A Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 600V |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | |||||||||||||||||||
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FGB20N60SFD-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 63nC Version: ESD Features of semiconductor devices: logic level Pulsed collector current: 60A Application: ignition systems Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FGA40N65SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 174W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 174W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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| FGH60T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| FGH60T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 79nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SHDF-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Pulsed collector current: 120A Mounting: THT Gate charge: 68nC Kind of package: tube Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL431ACLPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431ACLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS36 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 1339 шт: термін постачання 14-30 дні (днів) |
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TL431BCLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431BILPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431CDR2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431CLPRPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MPSA42 | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Frequency: 50MHz Kind of package: bulk |
на замовлення 696 шт: термін постачання 14-30 дні (днів) |
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1N4733A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
на замовлення 4099 шт: термін постачання 14-30 дні (днів) |
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1N4749A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
на замовлення 1804 шт: термін постачання 14-30 дні (днів) |
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BAS16WT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SC70 Max. forward voltage: 1V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 2419 шт: термін постачання 14-30 дні (днів) |
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BAS16XV2T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS16XV2T5G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Max. load current: 0.3A Capacitance: 7.6pF |
на замовлення 5194 шт: термін постачання 14-30 дні (днів) |
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FXL5T244BQX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 5 Case: DQFN14 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.1...3.6V DC Number of outputs: 5 Number of inputs: 5 |
на замовлення 71 шт: термін постачання 14-30 дні (днів) |
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MC14073BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Technology: CMOS Number of inputs: 3 Kind of package: tube Case: SO14 Family: HEF4000B Number of channels: triple; 3 Mounting: SMD Delay time: 130ns Supply voltage: 3...18V DC Kind of gate: AND Type of integrated circuit: digital |
на замовлення 5594 шт: термін постачання 14-30 дні (днів) |
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BC848BWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 37745 шт: термін постачання 14-30 дні (днів) |
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MC74ACT245DWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Case: SO20 Operating temperature: -40...85°C Technology: CMOS; TTL Number of channels: 8 Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: ACT Kind of output: 3-state |
на замовлення 648 шт: термін постачання 14-30 дні (днів) |
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SMMBT2907ALT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
на замовлення 7484 шт: термін постачання 14-30 дні (днів) |
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SMMBT2907ALT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| MOC8050SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: SMD
Manufacturer series: MOC8050M
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 8.5µs
Case: PDIP6
Turn-off time: 95µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: SMD
Manufacturer series: MOC8050M
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 8.5µs
Case: PDIP6
Turn-off time: 95µs
Number of channels: 1
на замовлення 971 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.76 грн |
| 11+ | 38.54 грн |
| MOC3041SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Output voltage: 400V
товару немає в наявності
В кошику
од. на суму грн.
| MOC3041SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Output voltage: 400V
на замовлення 719 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.78 грн |
| 11+ | 38.38 грн |
| 30+ | 32.12 грн |
| 50+ | 29.32 грн |
| 100+ | 26.27 грн |
| 300+ | 23.72 грн |
| FXMA2102UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Case: UQFN8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 37MHz
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Case: UQFN8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 37MHz
на замовлення 122 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.88 грн |
| 13+ | 32.53 грн |
| 20+ | 27.92 грн |
| 25+ | 26.85 грн |
| 4N35TVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: PDIP6
Turn-off time: 2µs
Number of channels: 1
Mounting: THT
Manufacturer series: 4N3X
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: PDIP6
Turn-off time: 2µs
Number of channels: 1
Mounting: THT
Manufacturer series: 4N3X
товару немає в наявності
В кошику
од. на суму грн.
| FGD5T120SH |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 5A
Power dissipation: 28W
Case: DPAK
Gate-emitter voltage: ±25V
Pulsed collector current: 12.5A
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 5A
Power dissipation: 28W
Case: DPAK
Gate-emitter voltage: ±25V
Pulsed collector current: 12.5A
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Application: ignition systems
на замовлення 2489 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.55 грн |
| 10+ | 90.59 грн |
| 100+ | 64.24 грн |
| MOC3022SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
Output voltage: 400V
на замовлення 715 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.44 грн |
| 13+ | 34.10 грн |
| 25+ | 31.13 грн |
| 50+ | 28.91 грн |
| 100+ | 26.77 грн |
| 500+ | 23.31 грн |
| MOC3022TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
Output voltage: 400V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4001G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
на замовлення 117 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.42 грн |
| 60+ | 6.92 грн |
| 71+ | 5.85 грн |
| 103+ | 4.01 грн |
| KSC945YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.25W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.25W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
на замовлення 382 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.63 грн |
| 39+ | 10.79 грн |
| 100+ | 6.71 грн |
| 200+ | 5.86 грн |
| KSB772YS |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Pulsed collector current: 7A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 80MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Pulsed collector current: 7A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 80MHz
на замовлення 1389 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.89 грн |
| 12+ | 34.84 грн |
| 100+ | 23.80 грн |
| 500+ | 18.45 грн |
| 1000+ | 17.79 грн |
| KSE13003H2ASTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 20W
Pulsed collector current: 3A
Current gain: 14...21
Collector-emitter voltage: 400V
Frequency: 4MHz
Kind of package: tube
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 20W
Pulsed collector current: 3A
Current gain: 14...21
Collector-emitter voltage: 400V
Frequency: 4MHz
Kind of package: tube
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| KSC1815YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Current gain: 120...240
Kind of package: Ammo Pack
Frequency: 80MHz
Collector current: 0.15A
Collector-emitter voltage: 50V
Power dissipation: 0.4W
Polarisation: bipolar
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Current gain: 120...240
Kind of package: Ammo Pack
Frequency: 80MHz
Collector current: 0.15A
Collector-emitter voltage: 50V
Power dissipation: 0.4W
Polarisation: bipolar
Type of transistor: NPN
на замовлення 2309 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.63 грн |
| 39+ | 10.79 грн |
| 100+ | 6.75 грн |
| 500+ | 4.93 грн |
| 1000+ | 4.33 грн |
| 2000+ | 3.81 грн |
| SBC857BWT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 100+ | 4.88 грн |
| 500+ | 3.12 грн |
| CNY173M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 840 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.27 грн |
| 23+ | 18.53 грн |
| 25+ | 17.38 грн |
| 50+ | 16.64 грн |
| 100+ | 16.47 грн |
| CNY173SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 867 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 40.80 грн |
| 19+ | 22.73 грн |
| 25+ | 20.84 грн |
| 50+ | 19.35 грн |
| 100+ | 19.27 грн |
| KSD1691GS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
на замовлення 1920 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 98.45 грн |
| 6+ | 72.48 грн |
| 10+ | 63.00 грн |
| 25+ | 51.80 грн |
| 100+ | 39.20 грн |
| 500+ | 34.76 грн |
| KSD1691GSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Pulsed collector current: 8A
Type of transistor: NPN
Current gain: 200...400
Kind of package: tube
Case: TO126ISO
Collector current: 5A
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Pulsed collector current: 8A
Type of transistor: NPN
Current gain: 200...400
Kind of package: tube
Case: TO126ISO
Collector current: 5A
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
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| KSD1691YS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Pulsed collector current: 8A
Type of transistor: NPN
Current gain: 160...320
Kind of package: bulk
Case: TO126ISO
Collector current: 5A
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Pulsed collector current: 8A
Type of transistor: NPN
Current gain: 160...320
Kind of package: bulk
Case: TO126ISO
Collector current: 5A
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
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| KSD1691YSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Pulsed collector current: 8A
Type of transistor: NPN
Current gain: 160...320
Kind of package: tube
Case: TO126ISO
Collector current: 5A
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Pulsed collector current: 8A
Type of transistor: NPN
Current gain: 160...320
Kind of package: tube
Case: TO126ISO
Collector current: 5A
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
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| KSD1616AGBU |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.75W
Case: TO92
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Frequency: 160MHz
Pulsed collector current: 2A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.75W
Case: TO92
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Frequency: 160MHz
Pulsed collector current: 2A
на замовлення 6509 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 18+ | 23.88 грн |
| 21+ | 20.42 грн |
| 100+ | 11.78 грн |
| 500+ | 8.65 грн |
| 1000+ | 7.74 грн |
| 2000+ | 7.49 грн |
| 2N7002 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 0.8A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 0.8A
Kind of package: reel; tape
на замовлення 8080 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.08 грн |
| 43+ | 9.64 грн |
| 62+ | 6.67 грн |
| 100+ | 5.80 грн |
| 500+ | 4.35 грн |
| 1000+ | 4.20 грн |
| 2500+ | 4.06 грн |
| NLSV1T34DFT2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
на замовлення 657 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 58.54 грн |
| 10+ | 43.81 грн |
| 25+ | 38.05 грн |
| 100+ | 32.86 грн |
| 500+ | 30.64 грн |
| 1N4004G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
на замовлення 514 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.87 грн |
| 63+ | 6.59 грн |
| 74+ | 5.60 грн |
| 103+ | 4.02 грн |
| 114+ | 3.62 грн |
| 500+ | 2.78 грн |
| 6N136VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 250ns
Turn-off time: 260ns
Max. off-state voltage: 5V
Collector current: 8mA
Manufacturer series: 6N136
Number of pins: 8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 250ns
Turn-off time: 260ns
Max. off-state voltage: 5V
Collector current: 8mA
Manufacturer series: 6N136
Number of pins: 8
на замовлення 284 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 176.50 грн |
| 200+ | 142.48 грн |
| 6N137SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
на замовлення 1251 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.12 грн |
| 25+ | 38.38 грн |
| 50+ | 36.16 грн |
| 100+ | 33.52 грн |
| 250+ | 29.90 грн |
| 750+ | 28.33 грн |
| 6N136SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
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В кошику
од. на суму грн.
| FXMA2104UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Case: MLP12
Kind of output: open drain
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Case: MLP12
Kind of output: open drain
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
на замовлення 3621 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.18 грн |
| 1N4005G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Quantity in set/package: 1000pcs.
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: bulk
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Quantity in set/package: 1000pcs.
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: bulk
на замовлення 2288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.98 грн |
| 61+ | 6.75 грн |
| 68+ | 6.09 грн |
| 109+ | 3.80 грн |
| 500+ | 2.92 грн |
| 1000+ | 2.61 грн |
| 2000+ | 2.44 грн |
| UF4007 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Capacitance: 17pF
Power dissipation: 2.08W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Capacitance: 17pF
Power dissipation: 2.08W
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| FGH40N60SMD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
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| FGAF40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
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од. на суму грн.
| FGAF40N60UFTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| FGB20N60SFD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Version: ESD
Features of semiconductor devices: logic level
Pulsed collector current: 60A
Application: ignition systems
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Version: ESD
Features of semiconductor devices: logic level
Pulsed collector current: 60A
Application: ignition systems
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
товару немає в наявності
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од. на суму грн.
| FGA40N65SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 358.32 грн |
| 10+ | 208.37 грн |
| FGH60T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FGH60T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
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| FGH40T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Gate-emitter voltage: ±20V
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| FGH40T65SHDF-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Gate-emitter voltage: ±20V
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| FGH40T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
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| TL431ACLPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431ACLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| SS36 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 1339 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.57 грн |
| 13+ | 31.79 грн |
| 15+ | 27.59 грн |
| 50+ | 20.42 грн |
| 100+ | 20.10 грн |
| TL431BCLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431BILPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431CDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| TL431CLPRPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| MPSA42 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
на замовлення 696 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.17 грн |
| 33+ | 12.85 грн |
| 100+ | 7.49 грн |
| 250+ | 6.34 грн |
| 500+ | 5.93 грн |
| 1N4733A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
на замовлення 4099 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.30 грн |
| 47+ | 8.89 грн |
| 54+ | 7.66 грн |
| 100+ | 4.46 грн |
| 250+ | 3.93 грн |
| 500+ | 3.61 грн |
| 1000+ | 3.31 грн |
| 3000+ | 2.91 грн |
| 1N4749A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
на замовлення 1804 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.76 грн |
| 55+ | 7.58 грн |
| 62+ | 6.67 грн |
| 91+ | 4.56 грн |
| 107+ | 3.88 грн |
| 250+ | 3.36 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.86 грн |
| BAS16WT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 2419 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 99+ | 4.20 грн |
| 178+ | 2.32 грн |
| 500+ | 1.60 грн |
| 1000+ | 1.39 грн |
| BAS16XV2T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
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| BAS16XV2T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
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| BAT54LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Max. load current: 0.3A
Capacitance: 7.6pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Max. load current: 0.3A
Capacitance: 7.6pF
на замовлення 5194 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 90+ | 4.61 грн |
| 128+ | 3.23 грн |
| 149+ | 2.78 грн |
| 250+ | 2.27 грн |
| 500+ | 1.93 грн |
| 1000+ | 1.58 грн |
| 3000+ | 1.19 грн |
| FXL5T244BQX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
на замовлення 71 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.63 грн |
| 10+ | 55.18 грн |
| 25+ | 51.06 грн |
| MC14073BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: triple; 3
Mounting: SMD
Delay time: 130ns
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: triple; 3
Mounting: SMD
Delay time: 130ns
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
на замовлення 5594 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.27 грн |
| 25+ | 16.80 грн |
| 27+ | 15.81 грн |
| 55+ | 14.99 грн |
| 110+ | 14.41 грн |
| 275+ | 13.59 грн |
| 550+ | 13.01 грн |
| 1045+ | 12.52 грн |
| 2530+ | 11.86 грн |
| BC848BWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 37745 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.98 грн |
| 72+ | 5.77 грн |
| 84+ | 4.94 грн |
| 154+ | 2.68 грн |
| 500+ | 1.72 грн |
| 1000+ | 1.51 грн |
| 3000+ | 1.27 грн |
| 6000+ | 1.15 грн |
| 9000+ | 1.10 грн |
| MC74ACT245DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Case: SO20
Operating temperature: -40...85°C
Technology: CMOS; TTL
Number of channels: 8
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Case: SO20
Operating temperature: -40...85°C
Technology: CMOS; TTL
Number of channels: 8
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
на замовлення 648 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.75 грн |
| 10+ | 45.63 грн |
| 25+ | 41.76 грн |
| SMMBT2907ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
на замовлення 7484 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.98 грн |
| 81+ | 5.11 грн |
| 112+ | 3.69 грн |
| 126+ | 3.27 грн |
| 500+ | 2.56 грн |
| 1000+ | 2.21 грн |
| 1500+ | 2.03 грн |
| 3000+ | 1.79 грн |
| 6000+ | 1.59 грн |
| SMMBT2907ALT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.



































