| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FSB50450US | ONSEMI |
 Category: Power switches - integrated circuitsDescription: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating voltage: 500V Power dissipation: 14W Insulation voltage: 1.5kV |
товару немає в наявності |
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| FSB50250AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W Operating temperature: -40...150°C Mounting: SMD DC supply current: 0.2mA Output current: 1.2A Operating voltage: 500V Power dissipation: 13.4W Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Type of integrated circuit: driver Integrated circuit features: MOSFET |
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| FSB50250US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Mounting: SMD Operating voltage: 500V Insulation voltage: 1.5kV Case: PowerSMD Type of integrated circuit: driver Integrated circuit features: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FSB50450AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...150°C DC supply current: 0.2mA Output current: 1.5A Operating voltage: 500V Power dissipation: 14W Insulation voltage: 1.5kV |
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| FSB50825AB | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV Operating temperature: -40...150°C Mounting: THT DC supply current: 0.2mA Output current: 3.6A Operating voltage: 250V Power dissipation: 14.2W Supply voltage: 150V Insulation voltage: 1.5kV Case: DIP Type of integrated circuit: driver Integrated circuit features: MOSFET |
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В кошику од. на суму грн. | |||||||||||||||
| FSB50825AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W Operating temperature: -40...150°C Mounting: SMD DC supply current: 0.2mA Output current: 3.6A Operating voltage: 250V Power dissipation: 14.2W Supply voltage: 150V Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Type of integrated circuit: driver Integrated circuit features: MOSFET |
товару немає в наявності |
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FDD6637 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: P-MOSFET Technology: PowerTrench® Mounting: SMD Drain current: -55A Drain-source voltage: -35V Gate charge: 35nC On-state resistance: 19mΩ Gate-source voltage: ±25V Power dissipation: 57W Polarisation: unipolar |
на замовлення 2363 шт: термін постачання 14-30 дні (днів) |
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| SZBZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| NTHL040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 159nC Kind of package: tube Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 32mΩ Drain current: 45A Gate-source voltage: ±30V Pulsed drain current: 162.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NTLJS2103PTBG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6 Drain current: -7.7A Gate charge: 12.8nC On-state resistance: 25mΩ Power dissipation: 3.3W Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: WDFN6 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -12V |
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MC14071BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube Mounting: SMD Operating temperature: -55...125°C Number of channels: quad; 4 Kind of package: tube Case: SO14 Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: OR |
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MC14071BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Number of channels: quad; 4 Kind of package: reel; tape Case: SO14 Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: OR |
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MC14071BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Number of channels: quad; 4 Kind of package: reel; tape Case: TSSOP14 Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: OR |
товару немає в наявності |
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| NLV14071BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6KE350A | ONSEMI |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 350V; 2A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 350V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Max. forward impulse current: 2A Max. off-state voltage: 300V Leakage current: 5µA |
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| MC74HC04ADR2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA Type of integrated circuit: digital Family: HC Number of channels: 6 Kind of integrated circuit: inverter Kind of output: push-pull Mounting: SMD Operating temperature: -55...125°C Quiescent current: 2µA Number of inputs: 6 Technology: CMOS Supply voltage: 2...6V Case: SOIC14 |
товару немає в наявності |
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| NUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape; ESD Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Kind of package: reel; tape Version: ESD |
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В кошику од. на суму грн. | |||||||||||||||
| SNUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CAT25040VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 4kb EEPROM Clock frequency: 20MHz Memory organisation: 512x8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CAT25040VP2I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: TDFN8 Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 4kb EEPROM Clock frequency: 20MHz Memory organisation: 512x8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CAT25040YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 4kb EEPROM Clock frequency: 20MHz Memory organisation: 512x8bit |
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| NCP59301DS30R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1 Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 3V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP59301DS28R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 2.8V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
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В кошику од. на суму грн. | |||||||||||||||
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||
| BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: N Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220 Gate-source voltage: 20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 200ns |
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В кошику од. на суму грн. | |||||||||||||||
| MC33067DWR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: PMIC; 300mA; SMD; -40÷85°C; 20V; 1MHz; Topology: flyback Topology: flyback Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...85°C Output current: 0.3A Output voltage: 5...5.2V Input voltage: 20V Frequency: 1MHz |
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| MC33067PG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC Manufacturer series: MC Case: DIP16 Topology: flyback Mounting: THT Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Operating temperature: -40...85°C Output current: 1.5A Output voltage: 5...5.2V Input voltage: 20V Frequency: 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1SMB5924BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 9.1V; SMD; reel,tape; SMB; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 9.1V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 2387 шт: термін постачання 14-30 дні (днів) |
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MMSZ5239BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2691 шт: термін постачання 14-30 дні (днів) |
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1N5239BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 4400 шт: термін постачання 14-30 дні (днів) |
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MUR8100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.5V Max. load current: 16A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 100ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS3660S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Case: PQFN8 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 29/87nC On-state resistance: 11/2.6mΩ Power dissipation: 2.2/2.5W Gate-source voltage: ±20/±12V Drain-source voltage: 30/30V Drain current: 30/60A |
на замовлення 2586 шт: термін постачання 14-30 дні (днів) |
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FDMS3664S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2937 шт: термін постачання 14-30 дні (днів) |
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FDMS86163P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 2848 шт: термін постачання 14-30 дні (днів) |
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FDMS8460 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8 Kind of channel: enhancement Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Case: PQFN8 Gate charge: 110nC On-state resistance: 3.3mΩ Power dissipation: 104W Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 49A Polarisation: unipolar |
на замовлення 2994 шт: термін постачання 14-30 дні (днів) |
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FDMS86252L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8 Case: PQFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 150V Drain current: 12A On-state resistance: 0.11Ω Power dissipation: 50W Gate-source voltage: ±20V Polarisation: unipolar |
на замовлення 2608 шт: термін постачання 14-30 дні (днів) |
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FDMS8333L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 76A Pulsed drain current: 250A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2993 шт: термін постачання 14-30 дні (днів) |
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FDMS86520L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Pulsed drain current: 60A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2927 шт: термін постачання 14-30 дні (днів) |
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FDMS86200 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 36A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
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В кошику од. на суму грн. | ||||||||||||||
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FDMS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 27A Power dissipation: 78W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 103mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS86300 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 122A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS5672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Power dissipation: 78W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS86104 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 73W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS5352 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 49A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 131nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS86200DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDMS7608S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 22/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13.9/8.6mΩ Mounting: SMD Gate charge: 24/30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDMS86263P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -4.4A Pulsed drain current: -70A Power dissipation: 2.5W Case: Power56 Gate-source voltage: ±25V On-state resistance: 64mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS3604S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/40A Pulsed drain current: 40...100A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 10.8/4mΩ Mounting: SMD Gate charge: 29/66nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Semiconductor structure: asymmetric |
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| FDMS1D2N03DSD | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS86500L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 799A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS8622 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16.5A Power dissipation: 31W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 97mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS86350 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 130A Power dissipation: 156W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS86181 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 78A Power dissipation: 125W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS86252 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8 Case: PQFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 150V Drain current: 16A On-state resistance: 96mΩ Power dissipation: 69W Gate-source voltage: ±20V Polarisation: unipolar |
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| FDMS86520 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 80A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS6673BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -52A Pulsed drain current: -422A Power dissipation: 73W Case: Power56 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS7694 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 27W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS037N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104.2W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS7650 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 169A Pulsed drain current: 1210A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 209nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS0308AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 50W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
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| FSB50450US |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
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| FSB50250AS |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.2A
Operating voltage: 500V
Power dissipation: 13.4W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.2A
Operating voltage: 500V
Power dissipation: 13.4W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
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| FSB50250US |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Case: PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Case: PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
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| FSB50450AS |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
DC supply current: 0.2mA
Output current: 1.5A
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
DC supply current: 0.2mA
Output current: 1.5A
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
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| FSB50825AB |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Mounting: THT
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: DIP
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Mounting: THT
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: DIP
Type of integrated circuit: driver
Integrated circuit features: MOSFET
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| FSB50825AS |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Mounting: SMD
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Mounting: SMD
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
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| FDD6637 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
на замовлення 2363 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.19 грн |
| 5+ | 101.55 грн |
| 10+ | 89.80 грн |
| 50+ | 65.46 грн |
| 100+ | 62.94 грн |
| SZBZX84C10LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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| NTHL040N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
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| NTLJS2103PTBG |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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| MC14071BDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: tube
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: tube
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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| MC14071BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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| MC14071BDTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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| NLV14071BDTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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| P6KE350A |
|
Виробник: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 350V; 2A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 350V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Max. forward impulse current: 2A
Max. off-state voltage: 300V
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 350V; 2A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 350V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Max. forward impulse current: 2A
Max. off-state voltage: 300V
Leakage current: 5µA
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| MC74HC04ADR2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V
Case: SOIC14
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V
Case: SOIC14
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| NUP2114UCMR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Version: ESD
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| SNUP2114UCMR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| CAT25040VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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| CAT25040VP2I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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| CAT25040YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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| NCP59301DS30R4G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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| NCP59301DS28R4G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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| BUZ11-NR4941 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
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| BUZ11-NR4941 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
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| MC33067DWR2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; 300mA; SMD; -40÷85°C; 20V; 1MHz; Topology: flyback
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Category: Power switches - integrated circuits
Description: IC: PMIC; 300mA; SMD; -40÷85°C; 20V; 1MHz; Topology: flyback
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
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| MC33067PG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Manufacturer series: MC
Case: DIP16
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Operating temperature: -40...85°C
Output current: 1.5A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Manufacturer series: MC
Case: DIP16
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Operating temperature: -40...85°C
Output current: 1.5A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
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| 1SMB5924BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; reel,tape; SMB; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 2387 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.40 грн |
| 23+ | 18.63 грн |
| 25+ | 16.87 грн |
| 50+ | 12.67 грн |
| 100+ | 11.16 грн |
| 250+ | 9.23 грн |
| 500+ | 8.22 грн |
| MMSZ5239BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2691 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| 79+ | 5.37 грн |
| 139+ | 3.02 грн |
| 200+ | 2.60 грн |
| 500+ | 2.17 грн |
| 1000+ | 1.91 грн |
| 2000+ | 1.72 грн |
| 1N5239BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 4400 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 117+ | 3.61 грн |
| 190+ | 2.22 грн |
| 500+ | 1.62 грн |
| 1000+ | 1.44 грн |
| MUR8100EG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
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| FDMS3660S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PQFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 29/87nC
On-state resistance: 11/2.6mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±12V
Drain-source voltage: 30/30V
Drain current: 30/60A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PQFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 29/87nC
On-state resistance: 11/2.6mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±12V
Drain-source voltage: 30/30V
Drain current: 30/60A
на замовлення 2586 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 141.00 грн |
| 10+ | 93.16 грн |
| 25+ | 84.77 грн |
| FDMS3664S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2937 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.38 грн |
| 10+ | 69.66 грн |
| 25+ | 62.11 грн |
| 100+ | 52.87 грн |
| FDMS86163P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2848 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.80 грн |
| 5+ | 160.30 грн |
| 10+ | 146.03 грн |
| 25+ | 130.93 грн |
| 50+ | 120.01 грн |
| 100+ | 115.82 грн |
| FDMS8460 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Gate charge: 110nC
On-state resistance: 3.3mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Gate charge: 110nC
On-state resistance: 3.3mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Polarisation: unipolar
на замовлення 2994 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 172.63 грн |
| 5+ | 132.60 грн |
| 10+ | 115.82 грн |
| 25+ | 107.43 грн |
| FDMS86252L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 12A
On-state resistance: 0.11Ω
Power dissipation: 50W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 12A
On-state resistance: 0.11Ω
Power dissipation: 50W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 2608 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 182.57 грн |
| 5+ | 135.12 грн |
| 10+ | 119.18 грн |
| 50+ | 88.12 грн |
| 100+ | 83.09 грн |
| FDMS8333L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2993 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 47.00 грн |
| 25+ | 41.96 грн |
| 100+ | 37.77 грн |
| 500+ | 36.09 грн |
| FDMS86520L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2927 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.84 грн |
| 5+ | 115.82 грн |
| 10+ | 103.23 грн |
| 25+ | 88.12 грн |
| 100+ | 80.57 грн |
| FDMS86200 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDMS2572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86300 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDMS5672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDMS86104 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDMS5352 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDMS86200DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS7608S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86263P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS3604S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
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| FDMS1D2N03DSD |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86500L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS8622 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86350 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86181 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Power dissipation: 125W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Power dissipation: 125W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86252 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 16A
On-state resistance: 96mΩ
Power dissipation: 69W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 16A
On-state resistance: 96mΩ
Power dissipation: 69W
Gate-source voltage: ±20V
Polarisation: unipolar
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| FDMS86520 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS6673BZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS7694 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 27W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 27W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS037N08B |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104.2W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104.2W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS7650 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS0308AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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