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NVMFS5C677NLWFT1G ONSEMI nvmfs5c677nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 166A; 18W; DFNW5
Kind of package: reel; tape
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.7nC
On-state resistance: 15mΩ
Power dissipation: 18W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 166A
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NSR0140P2T5G ONSEMI nsr0140p2-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 40V; 70mA; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
Load current: 70mA
Max. forward voltage: 0.35V
Max. forward impulse current: 0.5A
Max. off-state voltage: 40V
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TIP47G ONSEMI tip47-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 1A; 40W; TO220AB
Type of transistor: NPN
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector current: 1A
Current gain: 30...150
Collector-emitter voltage: 250V
Power dissipation: 40W
Frequency: 10MHz
Polarisation: bipolar
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TIP48G ONSEMI tip47-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 1A; 40W; TO220AB
Type of transistor: NPN
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector current: 1A
Current gain: 30...150
Collector-emitter voltage: 300V
Power dissipation: 40W
Frequency: 10MHz
Polarisation: bipolar
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74AC244SC 74AC244SC ONSEMI 74ACT244-D.PDF 74act244-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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74AC244SCX 74AC244SCX ONSEMI 74ACT244-D.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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MC74AC244DTR2G MC74AC244DTR2G ONSEMI mc74ac244-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
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74AC08SCX 74AC08SCX ONSEMI 74ACT08-D.PDF 74act08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
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74AC08MTC 74AC08MTC ONSEMI 74ACT08-D.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube; AC
Case: TSSOP14
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Number of channels: quad; 4
Type of integrated circuit: digital
Number of inputs: 2
Supply voltage: 2...6V DC
Family: AC
Kind of gate: AND
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74AC08MTCX 74AC08MTCX ONSEMI 74ACT08-D.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Type of integrated circuit: digital
Number of inputs: 2
Supply voltage: 2...6V DC
Family: AC
Kind of gate: AND
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MC14504BDTR2G MC14504BDTR2G ONSEMI mc14504b-d.pdf Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
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BD135G ONSEMI bd135-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: TO225
Mounting: THT
Power dissipation: 12.5W
Current gain: 40...250
Kind of package: bulk
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S2SA1774G ONSEMI 2sa1774-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NVLJWS022N06CLTAG ONSEMI nvljws022n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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MJ15016G ONSEMI 2n3055a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
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NVMFS040N10MCLT1G ONSEMI nvmfs040n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS040N10MCLTAG ONSEMI nvtfs040n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 82A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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VESSZESD7205WTT1G ONSEMI Category: Unclassified
Description: VESSZESD7205WTT1G
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+4.79 грн
Мінімальне замовлення: 3000
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LM2574N-12G ONSEMI LM2574.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
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FDPF18N20FT ONSEMI fdpf18n20ft-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 0.14Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 41W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
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NVMTS1D2N08H ONSEMI nvmts1d2n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D5N08H ONSEMI nvmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D6N10MCTXG ONSEMI nvmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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MC74HC32ADR2G-Q ONSEMI mc74hc32a-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+8.55 грн
Мінімальне замовлення: 2500
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LE25U20AMB-AH ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D25461C20D5&compId=LE25U20AMB-D.pdf?ci_sign=ea97833268199765d90221db575a8284f0dcf3c3 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Operating frequency: 30MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 2Mb FLASH
Flash memory organisation: 256kx8bit
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LE25U20AQGTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D25461D60D5&compId=LE25U20AQG-D.pdf?ci_sign=7ff354421294610dca502ecca670d41a7f665668 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Operating frequency: 30MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 2Mb FLASH
Flash memory organisation: 256kx8bit
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NVTFS014P04M8LTAG ONSEMI nvtfs014p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -224A; 30W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -49A
Pulsed drain current: -224A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3041SR2VM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3041SVM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3041VM ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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NDT3055L NDT3055L ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEA8F8C9250745&compId=NDT3055L.pdf?ci_sign=3ffa45876de5aadd8e2ae89fc79064ad1cb01cab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3709 шт:
термін постачання 21-30 дні (днів)
6+66.66 грн
10+60.79 грн
31+30.63 грн
84+28.97 грн
2000+27.86 грн
Мінімальне замовлення: 6
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MMBF170 MMBF170 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1042 шт:
термін постачання 21-30 дні (днів)
36+11.97 грн
52+7.78 грн
75+5.32 грн
100+4.55 грн
250+3.71 грн
500+3.23 грн
1000+2.84 грн
Мінімальне замовлення: 36
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MMBF170LT1G MMBF170LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C152FCE66C469&compId=MMBF170LT1G.PDF?ci_sign=290e0833eccb810af42552b67dc826a51f4ea9ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 9167 шт:
термін постачання 21-30 дні (днів)
27+16.24 грн
37+10.95 грн
56+7.17 грн
100+5.92 грн
500+3.91 грн
1000+3.35 грн
1500+3.07 грн
3000+3.02 грн
Мінімальне замовлення: 27
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NTH4L045N065SC1 ONSEMI nth4l045n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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MUR1540G MUR1540G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689E5CA67530745&compId=MUR15xx.PDF?ci_sign=71fc342b3eb4c9e0a0c145917f30148b5629cae6 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220-2
Max. load current: 30A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
4+111.96 грн
10+86.50 грн
16+62.69 грн
Мінімальне замовлення: 4
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NJVMJD122T4G ONSEMI mjd122-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MC7915ACD2TR4G ONSEMI mc7900-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Output voltage: -15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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MC7915BD2TR4G ONSEMI mc7900-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Output voltage: -15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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MC33074ADTBR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; TSSOP14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Voltage supply range: 3...44V DC
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NCV500SN18T1G ONSEMI ncp500-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Application: automotive industry
Output current: 0.15A
Number of channels: 1
Output voltage: 1.8V
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
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NCV500SN28T1G ONSEMI ncp500-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Application: automotive industry
Output current: 0.15A
Number of channels: 1
Output voltage: 2.8V
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
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NCP81074BMNTBG ONSEMI ncp81074-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Operating temperature: -40...140°C
Case: DFN8
Mounting: SMD
Output current: -10...10A
Impulse rise time: 7ns
Pulse fall time: 7ns
Supply voltage: 4.5...20V DC
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
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NCP81074BDR2G NCP81074BDR2G ONSEMI ncp81074-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Operating temperature: -40...140°C
Case: SO8
Mounting: SMD
Output current: -10...10A
Impulse rise time: 7ns
Pulse fall time: 7ns
Supply voltage: 4.5...20V DC
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
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1N5374BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; reel,tape; CASE017AA; single diode; 0.5uA
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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MC14174BDR2G MC14174BDR2G ONSEMI mc14174b-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; reel,tape; 600uA
Operating temperature: -55...125°C
Case: SO16
Technology: TTL
Trigger: positive-edge-triggered
Mounting: SMD
Quiescent current: 600µA
Supply voltage: 3...18V DC
Number of channels: 6
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of package: reel; tape
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BCX19LT1G BCX19LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786885799864C4745&compId=BCX1xLT1G.PDF?ci_sign=5f651d8a7458db3cba13b52f0fd174aeed987652 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
на замовлення 7320 шт:
термін постачання 21-30 дні (днів)
36+11.97 грн
48+8.41 грн
71+5.60 грн
100+4.63 грн
477+1.96 грн
1311+1.86 грн
6000+1.79 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SBCX19LT1G SBCX19LT1G ONSEMI bcx17lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MOC3061SR2VM ONSEMI moc3163m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3061SVM ONSEMI moc3163m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Conform to the norm: VDE
Kind of package: tube
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MOC3061TVM ONSEMI moc3163m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3061M
Conform to the norm: VDE
Kind of package: tube
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MOC3061VM ONSEMI moc3163m-d.pdf ONSM-S-A0003546853-1.pdf?t.download=true&u=5oefqw Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3061M
Conform to the norm: VDE
Kind of package: tube
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H11L1M H11L1M ONSEMI pVersion=0046&contRep=ZT&docId=E1C04D41A0D4B1F1A6F5005056AB5A8F&compId=H11L1.pdf?ci_sign=8dc2e342f0053828408b8e60e2b62fcb7f8be43b Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
на замовлення 1997 шт:
термін постачання 21-30 дні (днів)
7+67.52 грн
10+42.54 грн
14+29.13 грн
25+28.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MOC3062SVM ONSEMI moc3163m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3062M; tube
Type of optocoupler: optotriac
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Insulation voltage: 4.17kV
Manufacturer series: MOC3062M
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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MOC3062VM ONSEMI moc3163m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3062M; tube
Type of optocoupler: optotriac
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Insulation voltage: 4.17kV
Manufacturer series: MOC3062M
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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AFGHL40T120RWD ONSEMI afghl40t120rwd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
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NVF6P02T3G ONSEMI ntf6p02t3-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 36000 шт:
термін постачання 21-30 дні (днів)
4000+43.76 грн
Мінімальне замовлення: 4000
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NCS210RSQT2G ONSEMI ncs210r-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.035mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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NCV210RSQT2G ONSEMI ncs210r-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.035mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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NCS199A3RSQT2G ONSEMI ncs199a1r-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.15mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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74VHC86M 74VHC86M ONSEMI FAIRS26223-1.pdf?t.download=true&u=5oefqw 74vhc86-d.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHC
Kind of package: tube
Supply voltage: 2...5.5V DC
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NVMFS5C677NLWFT1G nvmfs5c677nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 166A; 18W; DFNW5
Kind of package: reel; tape
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.7nC
On-state resistance: 15mΩ
Power dissipation: 18W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 166A
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NSR0140P2T5G nsr0140p2-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 40V; 70mA; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
Load current: 70mA
Max. forward voltage: 0.35V
Max. forward impulse current: 0.5A
Max. off-state voltage: 40V
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TIP47G tip47-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 1A; 40W; TO220AB
Type of transistor: NPN
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector current: 1A
Current gain: 30...150
Collector-emitter voltage: 250V
Power dissipation: 40W
Frequency: 10MHz
Polarisation: bipolar
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TIP48G tip47-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 1A; 40W; TO220AB
Type of transistor: NPN
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector current: 1A
Current gain: 30...150
Collector-emitter voltage: 300V
Power dissipation: 40W
Frequency: 10MHz
Polarisation: bipolar
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74AC244SC 74ACT244-D.PDF 74act244-d.pdf
74AC244SC
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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74AC244SCX 74ACT244-D.PDF
74AC244SCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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MC74AC244DTR2G mc74ac244-d.pdf
MC74AC244DTR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
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74AC08SCX 74ACT08-D.PDF 74act08-d.pdf
74AC08SCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
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74AC08MTC 74ACT08-D.PDF
74AC08MTC
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube; AC
Case: TSSOP14
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Number of channels: quad; 4
Type of integrated circuit: digital
Number of inputs: 2
Supply voltage: 2...6V DC
Family: AC
Kind of gate: AND
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74AC08MTCX 74ACT08-D.PDF
74AC08MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Type of integrated circuit: digital
Number of inputs: 2
Supply voltage: 2...6V DC
Family: AC
Kind of gate: AND
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MC14504BDTR2G mc14504b-d.pdf
MC14504BDTR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
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BD135G bd135-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: TO225
Mounting: THT
Power dissipation: 12.5W
Current gain: 40...250
Kind of package: bulk
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S2SA1774G 2sa1774-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NVLJWS022N06CLTAG nvljws022n06cl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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MJ15016G 2n3055a-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
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NVMFS040N10MCLT1G nvmfs040n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS040N10MCLTAG nvtfs040n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 82A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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VESSZESD7205WTT1G
Виробник: ONSEMI
Category: Unclassified
Description: VESSZESD7205WTT1G
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+4.79 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
LM2574N-12G description LM2574.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
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FDPF18N20FT fdpf18n20ft-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 41W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 0.14Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 41W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
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NVMTS1D2N08H nvmts1d2n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D5N08H nvmts1d5n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D6N10MCTXG nvmts1d6n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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MC74HC32ADR2G-Q mc74hc32a-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+8.55 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
LE25U20AMB-AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D25461C20D5&compId=LE25U20AMB-D.pdf?ci_sign=ea97833268199765d90221db575a8284f0dcf3c3
Виробник: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Operating frequency: 30MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 2Mb FLASH
Flash memory organisation: 256kx8bit
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LE25U20AQGTXG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D25461D60D5&compId=LE25U20AQG-D.pdf?ci_sign=7ff354421294610dca502ecca670d41a7f665668
Виробник: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Operating frequency: 30MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 2Mb FLASH
Flash memory organisation: 256kx8bit
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NVTFS014P04M8LTAG nvtfs014p04m8l-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -224A; 30W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -49A
Pulsed drain current: -224A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3041SR2VM MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3041SVM MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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MOC3041VM MOC3043M-D.PDF
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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NDT3055L pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEA8F8C9250745&compId=NDT3055L.pdf?ci_sign=3ffa45876de5aadd8e2ae89fc79064ad1cb01cab
NDT3055L
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3709 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+66.66 грн
10+60.79 грн
31+30.63 грн
84+28.97 грн
2000+27.86 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MMBF170 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379
MMBF170
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1042 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.97 грн
52+7.78 грн
75+5.32 грн
100+4.55 грн
250+3.71 грн
500+3.23 грн
1000+2.84 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
MMBF170LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C152FCE66C469&compId=MMBF170LT1G.PDF?ci_sign=290e0833eccb810af42552b67dc826a51f4ea9ab
MMBF170LT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 9167 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.24 грн
37+10.95 грн
56+7.17 грн
100+5.92 грн
500+3.91 грн
1000+3.35 грн
1500+3.07 грн
3000+3.02 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
NTH4L045N065SC1 nth4l045n065sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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MUR1540G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689E5CA67530745&compId=MUR15xx.PDF?ci_sign=71fc342b3eb4c9e0a0c145917f30148b5629cae6
MUR1540G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220-2
Max. load current: 30A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+111.96 грн
10+86.50 грн
16+62.69 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NJVMJD122T4G mjd122-d.pdf
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MC7915ACD2TR4G mc7900-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Output voltage: -15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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MC7915BD2TR4G mc7900-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Output voltage: -15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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MC33074ADTBR2G mc34071-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; TSSOP14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Voltage supply range: 3...44V DC
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NCV500SN18T1G ncp500-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Application: automotive industry
Output current: 0.15A
Number of channels: 1
Output voltage: 1.8V
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
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NCV500SN28T1G ncp500-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Application: automotive industry
Output current: 0.15A
Number of channels: 1
Output voltage: 2.8V
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
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NCP81074BMNTBG ncp81074-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Operating temperature: -40...140°C
Case: DFN8
Mounting: SMD
Output current: -10...10A
Impulse rise time: 7ns
Pulse fall time: 7ns
Supply voltage: 4.5...20V DC
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
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NCP81074BDR2G ncp81074-d.pdf
NCP81074BDR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -10÷10A; Ch: 1; 4.5÷20VDC
Operating temperature: -40...140°C
Case: SO8
Mounting: SMD
Output current: -10...10A
Impulse rise time: 7ns
Pulse fall time: 7ns
Supply voltage: 4.5...20V DC
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
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1N5374BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; reel,tape; CASE017AA; single diode; 0.5uA
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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MC14174BDR2G mc14174b-d.pdf
MC14174BDR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; TTL; SMD; SO16; reel,tape; 600uA
Operating temperature: -55...125°C
Case: SO16
Technology: TTL
Trigger: positive-edge-triggered
Mounting: SMD
Quiescent current: 600µA
Supply voltage: 3...18V DC
Number of channels: 6
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of package: reel; tape
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BCX19LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE786885799864C4745&compId=BCX1xLT1G.PDF?ci_sign=5f651d8a7458db3cba13b52f0fd174aeed987652
BCX19LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
на замовлення 7320 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.97 грн
48+8.41 грн
71+5.60 грн
100+4.63 грн
477+1.96 грн
1311+1.86 грн
6000+1.79 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SBCX19LT1G bcx17lt1-d.pdf
SBCX19LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MOC3061SR2VM moc3163m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3061SVM moc3163m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Conform to the norm: VDE
Kind of package: tube
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MOC3061TVM moc3163m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3061M
Conform to the norm: VDE
Kind of package: tube
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MOC3061VM moc3163m-d.pdf ONSM-S-A0003546853-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3061M
Conform to the norm: VDE
Kind of package: tube
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H11L1M pVersion=0046&contRep=ZT&docId=E1C04D41A0D4B1F1A6F5005056AB5A8F&compId=H11L1.pdf?ci_sign=8dc2e342f0053828408b8e60e2b62fcb7f8be43b
H11L1M
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
на замовлення 1997 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.52 грн
10+42.54 грн
14+29.13 грн
25+28.97 грн
Мінімальне замовлення: 7
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MOC3062SVM moc3163m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3062M; tube
Type of optocoupler: optotriac
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Insulation voltage: 4.17kV
Manufacturer series: MOC3062M
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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MOC3062VM moc3163m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3062M; tube
Type of optocoupler: optotriac
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Insulation voltage: 4.17kV
Manufacturer series: MOC3062M
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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AFGHL40T120RWD afghl40t120rwd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 326W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
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NVF6P02T3G ntf6p02t3-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 36000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+43.76 грн
Мінімальне замовлення: 4000
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NCS210RSQT2G ncs210r-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.035mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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NCV210RSQT2G ncs210r-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.035mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 35µV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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NCS199A3RSQT2G ncs199a1r-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 200V/V; 0.15mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
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74VHC86M FAIRS26223-1.pdf?t.download=true&u=5oefqw 74vhc86-d.pdf
74VHC86M
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHC
Kind of package: tube
Supply voltage: 2...5.5V DC
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