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LM2901VDTBR2G LM2901VDTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901DTBR2G LM2901DTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901EDR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901VDR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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FCP260N60E FCP260N60E ONSEMI FCPF260N60E-D.PDF FAIR-S-A0002365478-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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FCPF260N60E FCPF260N60E ONSEMI FCPF260N60E-D.PDF fcpf260n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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NCV78L15ABDR2G NCV78L15ABDR2G ONSEMI mc78l00a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FCP7N60 FCP7N60 ONSEMI FCPF7N60-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
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FCA47N60F ONSEMI FCA47N60F-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
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FDMQ8205A ONSEMI fdmq8205a-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Power dissipation: 2.5W
Case: WDFN12
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 51/147mΩ
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 100V
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FCP260N65S3 FCP260N65S3 ONSEMI FCP260N65S3-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 24nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
3+216.56 грн
10+134.62 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FCP360N65S3R0 FCP360N65S3R0 ONSEMI FCP360N65S3R0-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 18nC
On-state resistance: 0.36Ω
Pulsed drain current: 25A
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NVD260N65S3T4G NVD260N65S3T4G ONSEMI nvd260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 23.5nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
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NVD360N65S3T4G NVD360N65S3T4G ONSEMI nvd360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 16.8nC
On-state resistance: 0.36Ω
Pulsed drain current: 25A
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MC33204DTBR2G ONSEMI mc33201-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: quad; 4
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
на замовлення 2324 шт:
термін постачання 14-30 дні (днів)
19+24.16 грн
23+18.53 грн
25+16.95 грн
50+16.29 грн
100+15.71 грн
250+15.04 грн
500+14.54 грн
1000+14.04 грн
Мінімальне замовлення: 19 шт
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PN2222ATFR PN2222ATFR ONSEMI pn2222a-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
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LM337BD2TR4G LM337BD2TR4G ONSEMI lm337-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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LM337BTG LM337BTG ONSEMI lm337-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
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LM337D2TR4G LM337D2TR4G ONSEMI lm337-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
на замовлення 620 шт:
термін постачання 14-30 дні (днів)
8+57.27 грн
11+39.89 грн
25+34.40 грн
50+31.41 грн
100+29.58 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
NSVBCP53-16T3G NSVBCP53-16T3G ONSEMI bcp53t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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NVBG025N065SC1 ONSEMI nvbg025n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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BC848CDW1T1G BC848CDW1T1G ONSEMI BC846BDW1T1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
36+12.53 грн
46+9.14 грн
54+7.81 грн
100+4.78 грн
200+4.25 грн
Мінімальне замовлення: 36 шт
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FCP110N65F FCP110N65F ONSEMI FCP110N65F-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 105A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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MMBT3904TT1G ONSEMI mmbt3904tt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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NCV78L12ABDR2G NCV78L12ABDR2G ONSEMI mc78l00a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV78L12ABPG NCV78L12ABPG ONSEMI mc78l00a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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LMV358DR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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LMV358DMR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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MMBT2907AM3T5G MMBT2907AM3T5G ONSEMI mmbt2907am3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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NSVMMBT2907AM3T5G NSVMMBT2907AM3T5G ONSEMI mmbt2907am3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSVMMBT2907AWT1G NSVMMBT2907AWT1G ONSEMI mmbt2907awt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NVB110N65S3F NVB110N65S3F ONSEMI nvb110n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVHL110N65S3F ONSEMI nvhl110n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVHL110N65S3HF ONSEMI nvhl110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVMFWD024N06CT1G NVMFWD024N06CT1G ONSEMI nvmfd024n06c-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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BC550CBU BC550CBU ONSEMI BC550-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 9317 шт:
термін постачання 14-30 дні (днів)
25+17.90 грн
30+13.96 грн
34+12.30 грн
100+7.81 грн
500+5.48 грн
1000+5.40 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
LP2950ACDT-5.0G LP2950ACDT-5.0G ONSEMI lp2950-d.pdf description Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Number of channels: 1
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LP2950ACDT-5RKG LP2950ACDT-5RKG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2950CDT-3.0RKG LP2950CDT-3.0RKG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2950CZ-3.0RAG LP2950CZ-3.0RAG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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LM2904DMR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Integrated circuit features: low power
Number of channels: dual; 2
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NVBLS1D5N10MCTXG ONSEMI nvbls1d5n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Pulsed drain current: 900A
Gate charge: 131nC
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NVBLS1D7N10MCTXG ONSEMI nvbls1d7n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 152W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Drain current: 265A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Pulsed drain current: 900A
Gate charge: 115nC
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2N3906TAR 2N3906TAR ONSEMI 2N3906-D.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
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2N3906TF 2N3906TF ONSEMI 2N3906-D.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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2N3906TFR 2N3906TFR ONSEMI 2N3906-D.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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LMV358MUTAG ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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NSVBCP69T1G NSVBCP69T1G ONSEMI bcp69t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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LM1117MPX-ADJNOPB LM1117MPX-ADJNOPB ONSEMI lm1117-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
на замовлення 2882 шт:
термін постачання 14-30 дні (днів)
13+36.69 грн
15+28.92 грн
17+25.93 грн
25+22.27 грн
50+20.19 грн
100+18.61 грн
200+17.45 грн
250+17.20 грн
500+16.54 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
SE5532AD8R2G ONSEMI ne5532-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual
Mounting: SMT
Input offset voltage: 4mV
Slew rate: 9V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -55...125°C
Integrated circuit features: low noise
Input bias current: 0.8µA
Voltage supply range: ± 3...20V DC
Kind of package: reel; tape
Input offset current: 150nA
Case: SO8
Number of channels: dual; 2
Bandwidth: 10MHz
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MMBT4403M3T5G MMBT4403M3T5G ONSEMI mmbt4403m3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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MMBT4403WT1G MMBT4403WT1G ONSEMI mmbt4403wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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MMBT4401M3T5G ONSEMI mmbt4401m3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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MMBT4401WT1G MMBT4401WT1G ONSEMI mmbt4401wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NSVMMBT4401WT1G NSVMMBT4401WT1G ONSEMI MMBT4401WT1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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BC847BWT1G BC847BWT1G ONSEMI BC846AWT1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 10511 шт:
термін постачання 14-30 дні (днів)
84+5.37 грн
91+4.57 грн
134+3.11 грн
161+2.59 грн
500+1.92 грн
1000+1.71 грн
1500+1.62 грн
3000+1.53 грн
6000+1.47 грн
Мінімальне замовлення: 84 шт
В кошику  од. на суму  грн.
NVBLS4D0N15MC ONSEMI nvbls4d0n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 158W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 900A
Drain-source voltage: 150V
Gate-source voltage: ±20V
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LM211DR2G ONSEMI lm211-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 5÷30V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Kind of package: reel; tape
Input offset current: 1.7nA
Input bias current: 45nA
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MC78M15BDTRKG MC78M15BDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MOC3023SVM ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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LM2901VDTBR2G lm339-d.pdf
LM2901VDTBR2G
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901DTBR2G lm339-d.pdf
LM2901DTBR2G
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901EDR2G lm339-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM2901VDR2G lm339-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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FCP260N60E FCPF260N60E-D.PDF FAIR-S-A0002365478-1.pdf?t.download=true&u=5oefqw
FCP260N60E
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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FCPF260N60E FCPF260N60E-D.PDF fcpf260n60e-d.pdf
FCPF260N60E
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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NCV78L15ABDR2G mc78l00a-d.pdf
NCV78L15ABDR2G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FCP7N60 FCPF7N60-D.pdf
FCP7N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
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FCA47N60F FCA47N60F-D.PDF
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
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FDMQ8205A fdmq8205a-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Power dissipation: 2.5W
Case: WDFN12
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 51/147mΩ
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 100V
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FCP260N65S3 FCP260N65S3-D.PDF
FCP260N65S3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 24nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+216.56 грн
10+134.62 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FCP360N65S3R0 FCP360N65S3R0-D.PDF
FCP360N65S3R0
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 18nC
On-state resistance: 0.36Ω
Pulsed drain current: 25A
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NVD260N65S3T4G nvd260n65s3-d.pdf
NVD260N65S3T4G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 23.5nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
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NVD360N65S3T4G nvd360n65s3-d.pdf
NVD360N65S3T4G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 83W
Gate charge: 16.8nC
On-state resistance: 0.36Ω
Pulsed drain current: 25A
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MC33204DTBR2G mc33201-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: quad; 4
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
на замовлення 2324 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
19+24.16 грн
23+18.53 грн
25+16.95 грн
50+16.29 грн
100+15.71 грн
250+15.04 грн
500+14.54 грн
1000+14.04 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
PN2222ATFR pn2222a-d.pdf
PN2222ATFR
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
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LM337BD2TR4G lm337-d.pdf
LM337BD2TR4G
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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LM337BTG lm337-d.pdf
LM337BTG
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
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LM337D2TR4G lm337-d.pdf
LM337D2TR4G
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
на замовлення 620 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+57.27 грн
11+39.89 грн
25+34.40 грн
50+31.41 грн
100+29.58 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
NSVBCP53-16T3G bcp53t1-d.pdf
NSVBCP53-16T3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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NVBG025N065SC1 nvbg025n065sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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BC848CDW1T1G BC846BDW1T1-D.PDF
BC848CDW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.53 грн
46+9.14 грн
54+7.81 грн
100+4.78 грн
200+4.25 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
FCP110N65F FCP110N65F-D.pdf
FCP110N65F
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 105A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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MMBT3904TT1G mmbt3904tt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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NCV78L12ABDR2G mc78l00a-d.pdf
NCV78L12ABDR2G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV78L12ABPG mc78l00a-d.pdf
NCV78L12ABPG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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LMV358DR2G lmv321-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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LMV358DMR2G lmv321-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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MMBT2907AM3T5G mmbt2907am3-d.pdf
MMBT2907AM3T5G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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NSVMMBT2907AM3T5G mmbt2907am3-d.pdf
NSVMMBT2907AM3T5G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSVMMBT2907AWT1G mmbt2907awt1-d.pdf
NSVMMBT2907AWT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NVB110N65S3F nvb110n65s3f-d.pdf
NVB110N65S3F
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVHL110N65S3F nvhl110n65s3f-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVHL110N65S3HF nvhl110n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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NVMFWD024N06CT1G nvmfd024n06c-d.pdf
NVMFWD024N06CT1G
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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BC550CBU BC550-D.PDF
BC550CBU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 9317 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
25+17.90 грн
30+13.96 грн
34+12.30 грн
100+7.81 грн
500+5.48 грн
1000+5.40 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
LP2950ACDT-5.0G description lp2950-d.pdf
LP2950ACDT-5.0G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Number of channels: 1
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LP2950ACDT-5RKG lp2950-d.pdf
LP2950ACDT-5RKG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2950CDT-3.0RKG lp2950-d.pdf
LP2950CDT-3.0RKG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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LP2950CZ-3.0RAG lp2950-d.pdf
LP2950CZ-3.0RAG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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LM2904DMR2G lm358-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Integrated circuit features: low power
Number of channels: dual; 2
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NVBLS1D5N10MCTXG nvbls1d5n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Pulsed drain current: 900A
Gate charge: 131nC
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NVBLS1D7N10MCTXG nvbls1d7n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 152W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Drain current: 265A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Pulsed drain current: 900A
Gate charge: 115nC
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2N3906TAR 2N3906-D.PDF
2N3906TAR
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
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2N3906TF 2N3906-D.PDF
2N3906TF
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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2N3906TFR 2N3906-D.PDF
2N3906TFR
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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LMV358MUTAG lmv321-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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NSVBCP69T1G bcp69t1-d.pdf
NSVBCP69T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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LM1117MPX-ADJNOPB lm1117-d.pdf
LM1117MPX-ADJNOPB
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
на замовлення 2882 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+36.69 грн
15+28.92 грн
17+25.93 грн
25+22.27 грн
50+20.19 грн
100+18.61 грн
200+17.45 грн
250+17.20 грн
500+16.54 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
SE5532AD8R2G ne5532-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual
Mounting: SMT
Input offset voltage: 4mV
Slew rate: 9V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -55...125°C
Integrated circuit features: low noise
Input bias current: 0.8µA
Voltage supply range: ± 3...20V DC
Kind of package: reel; tape
Input offset current: 150nA
Case: SO8
Number of channels: dual; 2
Bandwidth: 10MHz
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MMBT4403M3T5G mmbt4403m3-d.pdf
MMBT4403M3T5G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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MMBT4403WT1G mmbt4403wt1-d.pdf
MMBT4403WT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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MMBT4401M3T5G mmbt4401m3-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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MMBT4401WT1G mmbt4401wt1-d.pdf
MMBT4401WT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NSVMMBT4401WT1G MMBT4401WT1-D.PDF
NSVMMBT4401WT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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BC847BWT1G BC846AWT1-D.PDF
BC847BWT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 10511 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
84+5.37 грн
91+4.57 грн
134+3.11 грн
161+2.59 грн
500+1.92 грн
1000+1.71 грн
1500+1.62 грн
3000+1.53 грн
6000+1.47 грн
Мінімальне замовлення: 84 шт
В кошику  од. на суму  грн.
NVBLS4D0N15MC nvbls4d0n15mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 158W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 900A
Drain-source voltage: 150V
Gate-source voltage: ±20V
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LM211DR2G lm211-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 5÷30V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Kind of package: reel; tape
Input offset current: 1.7nA
Input bias current: 45nA
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MC78M15BDTRKG mc78m00-d.pdf
MC78M15BDTRKG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MOC3023SVM moc3023m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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