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FST3125MTCX FST3125MTCX ONSEMI FAIRS26272-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
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NCP130BMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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NCP130AMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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FGH75T65SHDTL4 ONSEMI fgh75t65shdtl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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FGH75T65SQDNL4 ONSEMI fgh75t65sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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NTBG020N120SC1 ONSEMI ntbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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MOC8050M MOC8050M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8.5µs
Turn-off time: 95µs
Number of channels: 1
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NTLJS2103PTBG ONSEMI ntljs2103p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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FCB260N65S3 FCB260N65S3 ONSEMI fcb260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
на замовлення 784 шт:
термін постачання 21-30 дні (днів)
2+250.53 грн
10+164.89 грн
25+146.93 грн
100+137.13 грн
Мінімальне замовлення: 2
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FCD260N65S3 ONSEMI fcd260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
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NTPF360N65S3H ONSEMI ntpf360n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Power dissipation: 26W
Gate charge: 17.5nC
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NTND31225CZTAG ONSEMI ntnd31225cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
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MC33262DR2G ONSEMI mc34262-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
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MC33262PG MC33262PG ONSEMI mc34262-d.pdf description Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
на замовлення 143 шт:
термін постачання 21-30 дні (днів)
6+77.36 грн
10+64.49 грн
25+62.04 грн
50+55.51 грн
100+53.87 грн
Мінімальне замовлення: 6
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FAN4800AUN ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FAN4800AUM ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FUSB2805MLX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A093ACDFD2259&compId=FUSB2805.pdf?ci_sign=02d0f2713126d4acd3c9bf4ffe66460232cabeb9 Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI,USB 2.0; transceiver; 2.7÷4.5VDC; MLP32
Type of integrated circuit: interface
Interface: ULPI; USB 2.0
Kind of integrated circuit: transceiver
Data transfer rate: 0.48Gbps
Supply voltage: 2.7...4.5V DC
Case: MLP32
Mounting: SMD
Operating temperature: -40...85°C
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NCP115ASN330T2G NCP115ASN330T2G ONSEMI ncp115-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
5+81.63 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2N7000 2N7000 ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 3314 шт:
термін постачання 21-30 дні (днів)
14+32.53 грн
17+25.14 грн
19+21.71 грн
25+17.14 грн
100+11.92 грн
500+9.39 грн
Мінімальне замовлення: 14
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FDB0250N807L ONSEMI fdb0250n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; Idm: 1110A; 214W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Pulsed drain current: 1110A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP1380BDR2G NCP1380BDR2G ONSEMI ncp1380-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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LMV339DTBR2G LMV339DTBR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E7CA11BCF100CE&compId=LMV331_393_339.PDF?ci_sign=ec8a8141c56814ab95dc20979e4034ca2a0c855c Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...85°C
Input bias current: 1nA
Input offset voltage: 9mV
Number of comparators: 4
Operating voltage: 2.7...5V
Input offset current: 1nA
Type of integrated circuit: comparator
Case: TSSOP14
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FDMS7680 ONSEMI fdms7680-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FQL40N50F FQL40N50F ONSEMI fql40n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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FDC86244 ONSEMI fdc86244-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: SuperSOT-6
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FSBB20CH60C
+1
 		FSBB20CH60C ONSEMI fsbb20ch60c-d.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
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MC74LVXT4051DTRG ONSEMI MC74LVXT4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 8
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FGB3040G2-F085 FGB3040G2-F085 ONSEMI fgi3040g2_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
на замовлення 737 шт:
термін постачання 21-30 дні (днів)
3+199.55 грн
10+166.52 грн
100+155.09 грн
250+154.28 грн
Мінімальне замовлення: 3
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NCP130AMX180TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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NCP130BMX180TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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MC74HC1G00DTT1G MC74HC1G00DTT1G ONSEMI MC74HC1G00-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
на замовлення 616 шт:
термін постачання 21-30 дні (днів)
20+22.86 грн
32+12.90 грн
100+8.65 грн
250+7.51 грн
Мінімальне замовлення: 20
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MC74HC1G08DFT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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MC74HC1G08DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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NV25256DTHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6940D5&compId=NV25128-D.pdf?ci_sign=7b16908e3620eaf2182175a97869d9d31dc1e2dd Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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NV25256DWHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6A80D5&compId=NV25128-D.pdf?ci_sign=03fa58831d3532641ed44e0a84b4ed4c5ab51406 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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NV25256MUW3VTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6BC0D5&compId=NV25256WF-D.pdf?ci_sign=f0b606c98d12cd7f7b6ddde3be4f222256c61b6a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83AE0D5&compId=CAV25256-D.pdf?ci_sign=669efa382c328832eaf282abdce8d583a1c197b5 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83C20D5&compId=CAV25256-D.pdf?ci_sign=a3e202f555004890cf315d766a60c9123505a10f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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BAS116LT1G BAS116LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED99EE00FE6997A7820&compId=BAS116L.pdf?ci_sign=d39c8aa6435ca31122d7e2f6411f3825f5b37403 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
39+11.43 грн
64+6.45 грн
92+4.47 грн
107+3.84 грн
Мінімальне замовлення: 39
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BAS116TT1G ONSEMI bas116tt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBAS116LT1G SBAS116LT1G ONSEMI bas116lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
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NSVBAS116LT3G ONSEMI bas116lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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1N5956BRLG 1N5956BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
на замовлення 5232 шт:
термін постачання 21-30 дні (днів)
42+10.55 грн
50+8.73 грн
100+8.24 грн
250+8.00 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
FSB50550AS ONSEMI fsb50550as-d.pdf Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Operating temperature: -40...125°C
Mounting: SMD
Output current: 2A
Case: Gull wing; PowerSMD
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Integrated circuit features: MOSFET
на замовлення 15750 шт:
термін постачання 21-30 дні (днів)
450+472.06 грн
Мінімальне замовлення: 450
В кошику  од. на суму  грн.
SMF05CT2G ONSEMI smf05c-d.pdf Category: Diodes - Unclassified
Description: SMF05CT2G
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+9.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTPF125N65S3H ONSEMI ntpf125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NC7S32M5X NC7S32M5X ONSEMI NC7S32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)
63+7.03 грн
74+5.55 грн
82+4.98 грн
99+4.15 грн
128+3.20 грн
250+2.82 грн
500+2.60 грн
1000+2.46 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
NL17SG32DFT2G NL17SG32DFT2G ONSEMI NL17SG32-D.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
на замовлення 2988 шт:
термін постачання 21-30 дні (днів)
21+21.10 грн
36+11.43 грн
45+9.21 грн
52+7.90 грн
100+6.73 грн
250+5.49 грн
1000+4.11 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
NTMFS5C670NLT1G NTMFS5C670NLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1B399E12400CE&compId=NTMFS5C670NL.PDF?ci_sign=58794c142c93026eb89de92680ee144a83517f87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 50A
Drain-source voltage: 60V
Gate charge: 20nC
Type of transistor: N-MOSFET
On-state resistance: 8.8mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 440A
Kind of channel: enhancement
Polarisation: unipolar
на замовлення 1654 шт:
термін постачання 21-30 дні (днів)
3+181.09 грн
5+106.12 грн
25+96.32 грн
100+83.26 грн
500+75.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NTP165N65S3H NTP165N65S3H ONSEMI ntp165n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 86 шт:
термін постачання 21-30 дні (днів)
2+204.89 грн
10+192.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMS007N08LC ONSEMI fdms007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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NUP4301MR6T1G NUP4301MR6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEBCE9911360CE&compId=NUP4301MR6T1G.PDF?ci_sign=c0c9d50ea049799b1959f4d08e53119a3cc282d2 Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Max. off-state voltage: 70V
на замовлення 2750 шт:
термін постачання 21-30 дні (днів)
23+19.34 грн
27+15.67 грн
31+13.47 грн
40+10.29 грн
100+6.78 грн
500+6.20 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
FDP22N50N FDP22N50N ONSEMI FDP22N50N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
2+276.91 грн
10+224.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FGH75T65SQD-F155 ONSEMI fgh75t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
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FGH75T65SHD-F155 ONSEMI fgh75t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
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FGH75T65SQDT-F155 ONSEMI fgh75t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
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FGH75T65SHDT-F155 ONSEMI fgh75t65shdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
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BC848BLT3G BC848BLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NCP1076P065G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP3065DR2G NCP3065DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5CE0AE776030A17&compId=NCP3065.PDF?ci_sign=286f04e7853b7d9f6988b93b64fa3963eebf3944 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 110...190kHz
Number of channels: 1
Operating voltage: 3...40V DC
на замовлення 1992 шт:
термін постачання 21-30 дні (днів)
5+100.21 грн
10+67.75 грн
25+62.04 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FST3125MTCX FAIRS26272-1.pdf?t.download=true&u=5oefqw
FST3125MTCX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
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NCP130BMX080TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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NCP130AMX080TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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FGH75T65SHDTL4 fgh75t65shdtl4-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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FGH75T65SQDNL4 fgh75t65sqdnl4-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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NTBG020N120SC1 ntbg020n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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MOC8050M pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72
MOC8050M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8.5µs
Turn-off time: 95µs
Number of channels: 1
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NTLJS2103PTBG ntljs2103p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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FCB260N65S3 fcb260n65s3-d.pdf
FCB260N65S3
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
на замовлення 784 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+250.53 грн
10+164.89 грн
25+146.93 грн
100+137.13 грн
Мінімальне замовлення: 2
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FCD260N65S3 fcd260n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
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NTPF360N65S3H ntpf360n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Power dissipation: 26W
Gate charge: 17.5nC
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NTND31225CZTAG ntnd31225cz-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
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MC33262DR2G mc34262-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
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MC33262PG description mc34262-d.pdf
MC33262PG
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
на замовлення 143 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+77.36 грн
10+64.49 грн
25+62.04 грн
50+55.51 грн
100+53.87 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FAN4800AUN fan4800cu-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FAN4800AUM fan4800cu-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FUSB2805MLX pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A093ACDFD2259&compId=FUSB2805.pdf?ci_sign=02d0f2713126d4acd3c9bf4ffe66460232cabeb9
Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI,USB 2.0; transceiver; 2.7÷4.5VDC; MLP32
Type of integrated circuit: interface
Interface: ULPI; USB 2.0
Kind of integrated circuit: transceiver
Data transfer rate: 0.48Gbps
Supply voltage: 2.7...4.5V DC
Case: MLP32
Mounting: SMD
Operating temperature: -40...85°C
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NCP115ASN330T2G ncp115-d.pdf
NCP115ASN330T2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+81.63 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2N7000 2N7000_2N7002_NDS7002A.PDF
2N7000
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 3314 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+32.53 грн
17+25.14 грн
19+21.71 грн
25+17.14 грн
100+11.92 грн
500+9.39 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
FDB0250N807L fdb0250n807l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; Idm: 1110A; 214W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Pulsed drain current: 1110A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP1380BDR2G ncp1380-d.pdf
NCP1380BDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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LMV339DTBR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E7CA11BCF100CE&compId=LMV331_393_339.PDF?ci_sign=ec8a8141c56814ab95dc20979e4034ca2a0c855c
LMV339DTBR2G
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...85°C
Input bias current: 1nA
Input offset voltage: 9mV
Number of comparators: 4
Operating voltage: 2.7...5V
Input offset current: 1nA
Type of integrated circuit: comparator
Case: TSSOP14
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FDMS7680 fdms7680-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FQL40N50F fql40n50f-d.pdf
FQL40N50F
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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FDC86244 fdc86244-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: SuperSOT-6
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FSBB20CH60C fsbb20ch60c-d.pdf
FSBB20CH60C
+1
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
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MC74LVXT4051DTRG MC74LVXT4051-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 8
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FGB3040G2-F085 fgi3040g2_f085-d.pdf
FGB3040G2-F085
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
на замовлення 737 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+199.55 грн
10+166.52 грн
100+155.09 грн
250+154.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NCP130AMX180TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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NCP130BMX180TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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MC74HC1G00DTT1G MC74HC1G00-D.pdf
MC74HC1G00DTT1G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
на замовлення 616 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.86 грн
32+12.90 грн
100+8.65 грн
250+7.51 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MC74HC1G08DFT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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MC74HC1G08DFT2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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NV25256DTHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6940D5&compId=NV25128-D.pdf?ci_sign=7b16908e3620eaf2182175a97869d9d31dc1e2dd
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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NV25256DWHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6A80D5&compId=NV25128-D.pdf?ci_sign=03fa58831d3532641ed44e0a84b4ed4c5ab51406
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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NV25256MUW3VTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6BC0D5&compId=NV25256WF-D.pdf?ci_sign=f0b606c98d12cd7f7b6ddde3be4f222256c61b6a
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83AE0D5&compId=CAV25256-D.pdf?ci_sign=669efa382c328832eaf282abdce8d583a1c197b5
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83C20D5&compId=CAV25256-D.pdf?ci_sign=a3e202f555004890cf315d766a60c9123505a10f
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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BAS116LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED99EE00FE6997A7820&compId=BAS116L.pdf?ci_sign=d39c8aa6435ca31122d7e2f6411f3825f5b37403
BAS116LT1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.43 грн
64+6.45 грн
92+4.47 грн
107+3.84 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BAS116TT1G bas116tt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBAS116LT1G bas116lt1-d.pdf
SBAS116LT1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
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NSVBAS116LT3G bas116lt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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1N5956BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
1N5956BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
на замовлення 5232 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.55 грн
50+8.73 грн
100+8.24 грн
250+8.00 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
FSB50550AS fsb50550as-d.pdf
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Operating temperature: -40...125°C
Mounting: SMD
Output current: 2A
Case: Gull wing; PowerSMD
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Integrated circuit features: MOSFET
на замовлення 15750 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
450+472.06 грн
Мінімальне замовлення: 450
В кошику  од. на суму  грн.
SMF05CT2G smf05c-d.pdf
Виробник: ONSEMI
Category: Diodes - Unclassified
Description: SMF05CT2G
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+9.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTPF125N65S3H ntpf125n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NC7S32M5X NC7S32.pdf
NC7S32M5X
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.03 грн
74+5.55 грн
82+4.98 грн
99+4.15 грн
128+3.20 грн
250+2.82 грн
500+2.60 грн
1000+2.46 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
NL17SG32DFT2G NL17SG32-D.pdf
NL17SG32DFT2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
на замовлення 2988 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+21.10 грн
36+11.43 грн
45+9.21 грн
52+7.90 грн
100+6.73 грн
250+5.49 грн
1000+4.11 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
NTMFS5C670NLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1B399E12400CE&compId=NTMFS5C670NL.PDF?ci_sign=58794c142c93026eb89de92680ee144a83517f87
NTMFS5C670NLT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 50A
Drain-source voltage: 60V
Gate charge: 20nC
Type of transistor: N-MOSFET
On-state resistance: 8.8mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 440A
Kind of channel: enhancement
Polarisation: unipolar
на замовлення 1654 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+181.09 грн
5+106.12 грн
25+96.32 грн
100+83.26 грн
500+75.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NTP165N65S3H ntp165n65s3h-d.pdf
NTP165N65S3H
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 86 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+204.89 грн
10+192.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMS007N08LC fdms007n08lc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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NUP4301MR6T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEBCE9911360CE&compId=NUP4301MR6T1G.PDF?ci_sign=c0c9d50ea049799b1959f4d08e53119a3cc282d2
NUP4301MR6T1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Max. off-state voltage: 70V
на замовлення 2750 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+19.34 грн
27+15.67 грн
31+13.47 грн
40+10.29 грн
100+6.78 грн
500+6.20 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
FDP22N50N FDP22N50N.pdf
FDP22N50N
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+276.91 грн
10+224.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FGH75T65SQD-F155 fgh75t65sqd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
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FGH75T65SHD-F155 fgh75t65shd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
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FGH75T65SQDT-F155 fgh75t65sqdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
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FGH75T65SHDT-F155 fgh75t65shdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
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BC848BLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1
BC848BLT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NCP1076P065G ncp1070-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP3065DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5CE0AE776030A17&compId=NCP3065.PDF?ci_sign=286f04e7853b7d9f6988b93b64fa3963eebf3944
NCP3065DR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 110...190kHz
Number of channels: 1
Operating voltage: 3...40V DC
на замовлення 1992 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+100.21 грн
10+67.75 грн
25+62.04 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
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