| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NJW21193G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P Polarisation: bipolar Case: TO3P Mounting: THT Kind of package: tube Type of transistor: PNP Power dissipation: 200W Collector current: 16A Current gain: 20...70 Collector-emitter voltage: 250V Frequency: 4MHz Application: automotive industry |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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D44H8G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 50W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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| NVBLS1D1N08H | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 156W; TOLL Case: TOLL Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 166nC On-state resistance: 1.05mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 156W Drain current: 351A Pulsed drain current: 900A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVBLS1D5N10MCTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W Mounting: SMD Case: H-PSOF8L Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 131nC On-state resistance: 1.5mΩ Power dissipation: 165W Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 300A Pulsed drain current: 900A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVBLS1D7N08H | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 241.3A; Idm: 900A; 118.7W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 118.7W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 121nC On-state resistance: 1.7mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 241.3A Pulsed drain current: 900A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVBLS1D7N10MCTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 152W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 115nC On-state resistance: 1.8mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 265A Pulsed drain current: 900A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2N3906TAR | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N3906TF | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N3906TFR | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NSV9435T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.72W Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Collector-emitter voltage: 300mV Collector current: 3A Quantity in set/package: 1000pcs. Pulsed collector current: 5A Current gain: 220 Base resistor: 10kΩ Frequency: 110MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34071DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO8 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: single |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34074ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO14 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: quad |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34074DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO14 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: quad |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34074VDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO14 Slew rate: 13V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: quad |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MJD31CRLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJVMJD31CRLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJVMJD31CG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LMV358MUTAG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; uDFN8; 2.7÷5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: dual Case: uDFN8 Slew rate: 1V/μs Operating temperature: -40...85°C Input offset voltage: 9mV Integrated circuit features: voltage feedback Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBCP69T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBC848BWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC123JM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC124EM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 60...100 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2576D2T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM7301SN1T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4MHz; SOT23-5; 1.8÷32VDC; reel,tape Mounting: SMT Case: SOT23-5 Operating temperature: -40...85°C Input offset current: 55nA Input offset voltage: 6mV Voltage supply range: 1.8...32V DC Bandwidth: 4MHz Integrated circuit features: low power; rail-to-rail Type of integrated circuit: operational amplifier Kind of package: reel; tape Number of channels: single |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP59151DS28R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.5A; D2PAK-5; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP59150 Operating temperature: -40...125°C Voltage drop: 0.5V Number of channels: 1 Output current: 1.5A Input voltage: 2.24...13.5V Tolerance: ±2.5% Output voltage: 2.8V Type of integrated circuit: voltage regulator Case: D2PAK-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BSH2N7002KT1G | ONSEMI |
Category: Unclassified Description: BSH2N7002KT1G |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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TIP117G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Kind of transistor: Darlington Type of transistor: PNP Collector current: 2A Power dissipation: 2W Collector-emitter voltage: 100V Polarisation: bipolar |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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| 2SA2039-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK Mounting: SMD Collector current: 5A Power dissipation: 0.8W Collector-emitter voltage: 50V Current gain: 200...560 Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SA2125-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SA2125-TD-H | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SA2210-1E | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP Mounting: THT Collector current: 20A Power dissipation: 30W Collector-emitter voltage: 50V Current gain: 150...450 Frequency: 140MHz Polarisation: bipolar Case: TO220FP Type of transistor: PNP Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SA2210-EPN-1E | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP Mounting: THT Collector current: 20A Power dissipation: 2W Collector-emitter voltage: 50V Frequency: 140MHz Polarisation: bipolar Case: TO220FP Type of transistor: PNP Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSV2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Application: automotive industry Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65MQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65LQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 793nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65MQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 145nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL75T65SQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 136nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL75T65SQ | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL75T65SQDC | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2N5190G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 4A; 40W; TO225 Type of transistor: NPN Mounting: THT Case: TO225 Collector current: 4A Power dissipation: 40W Current gain: 25...100 Collector-emitter voltage: 40V Frequency: 2MHz Polarisation: bipolar Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM1117MPX-ADJNOPB | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM1117IMPX-ADJNOPB | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV8154MW120280TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Number of channels: 2 Case: DFN10 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NE521DR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT Kind of comparator: fast Kind of package: reel; tape Mounting: SMT Case: SO14 Operating temperature: 0...70°C Delay time: 8.2ns Input offset current: 1µA Input bias current: 7.5µA Input offset voltage: 7.5mV Number of comparators: 2 Operating voltage: 4.75...5.25/-4.75...-5.25V Type of integrated circuit: comparator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S2SC4617G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.125W Case: SC75; SOT416 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MELMUR1620CTG | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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MUN2211T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 5750 шт: термін постачання 21-30 дні (днів) |
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| MARSMMUN2211LT1G | ONSEMI |
Category: Unclassified Description: MARSMMUN2211LT1G |
на замовлення 18000 шт: термін постачання 21-30 дні (днів) |
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| SE5532AD8R2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape Type of integrated circuit: operational amplifier Integrated circuit features: low noise Case: SO8 Number of channels: dual Mounting: SMT Kind of package: reel; tape Operating temperature: -55...125°C Input offset current: 150nA Input bias current: 0.8µA Input offset voltage: 4mV Voltage supply range: ± 3...20V DC Slew rate: 9V/μs Bandwidth: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT4403M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT4403WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT5401LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 160000 шт: термін постачання 21-30 дні (днів) |
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| NCP1079BBP130G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1.05A Case: DIP8 Mounting: SMD Frequency: 117...143kHz Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 3.9Ω Operating voltage: 6.5...20V DC |
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В кошику од. на суму грн. | |||||||||||||||||||
| NVLJWD040N06CLTAG | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6 Type of transistor: N-MOSFET x2 Drain-source voltage: 60V Drain current: 18A Power dissipation: 12W Case: WDFNW6 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhancement Polarisation: unipolar Kind of package: reel; tape Pulsed drain current: 54A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GRUBSS138 | ONSEMI |
Category: Unclassified Description: GRUBSS138 |
на замовлення 474000 шт: термін постачання 21-30 дні (днів) |
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| MARBSS138LT1G | ONSEMI |
Category: Unclassified Description: MARBSS138LT1G |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| FAN7930CMX-G | ONSEMI |
Category: UnclassifiedDescription: FAN7930CMX-G |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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MM3Z10VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 6973 шт: термін постачання 21-30 дні (днів) |
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MM3Z12VST1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Semiconductor structure: single diode Type of diode: Zener Tolerance: ±2% Zener voltage: 12V |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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MM3Z18VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 1300 шт: термін постачання 21-30 дні (днів) |
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| NJW21193G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Polarisation: bipolar
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: PNP
Power dissipation: 200W
Collector current: 16A
Current gain: 20...70
Collector-emitter voltage: 250V
Frequency: 4MHz
Application: automotive industry
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Polarisation: bipolar
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: PNP
Power dissipation: 200W
Collector current: 16A
Current gain: 20...70
Collector-emitter voltage: 250V
Frequency: 4MHz
Application: automotive industry
на замовлення 113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 342.72 грн |
| 3+ | 301.57 грн |
| 5+ | 207.13 грн |
| 13+ | 196.02 грн |
| D44H8G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.21 грн |
| 10+ | 57.93 грн |
| 23+ | 40.87 грн |
| 63+ | 38.65 грн |
| NVBLS1D1N08H |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 156W; TOLL
Case: TOLL
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 166nC
On-state resistance: 1.05mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 156W
Drain current: 351A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 156W; TOLL
Case: TOLL
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 166nC
On-state resistance: 1.05mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 156W
Drain current: 351A
Pulsed drain current: 900A
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| NVBLS1D5N10MCTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Mounting: SMD
Case: H-PSOF8L
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 165W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Mounting: SMD
Case: H-PSOF8L
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 165W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 900A
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| NVBLS1D7N08H |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 241.3A; Idm: 900A; 118.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 118.7W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 241.3A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 241.3A; Idm: 900A; 118.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 118.7W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 241.3A
Pulsed drain current: 900A
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| NVBLS1D7N10MCTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 152W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 152W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
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| 2N3906TAR |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
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| 2N3906TF |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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| 2N3906TFR |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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| NSV9435T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
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| MC34071DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: single
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| MC34074ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
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| MC34074DR2G | ![]() |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
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| MC34074VDR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
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| MJD31CRLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD31CRLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| NJVMJD31CG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
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| LMV358MUTAG |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; uDFN8; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual
Case: uDFN8
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Integrated circuit features: voltage feedback
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; uDFN8; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual
Case: uDFN8
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Integrated circuit features: voltage feedback
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| NSVBCP69T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NSVBC848BWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| DTC123JM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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| DTC124EM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Quantity in set/package: 8000pcs.
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| LM2576D2T-ADJG | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
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| LM7301SN1T1G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; SOT23-5; 1.8÷32VDC; reel,tape
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset current: 55nA
Input offset voltage: 6mV
Voltage supply range: 1.8...32V DC
Bandwidth: 4MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; SOT23-5; 1.8÷32VDC; reel,tape
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset current: 55nA
Input offset voltage: 6mV
Voltage supply range: 1.8...32V DC
Bandwidth: 4MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
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| NCP59151DS28R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.5A; D2PAK-5; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP59150
Operating temperature: -40...125°C
Voltage drop: 0.5V
Number of channels: 1
Output current: 1.5A
Input voltage: 2.24...13.5V
Tolerance: ±2.5%
Output voltage: 2.8V
Type of integrated circuit: voltage regulator
Case: D2PAK-5
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.5A; D2PAK-5; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP59150
Operating temperature: -40...125°C
Voltage drop: 0.5V
Number of channels: 1
Output current: 1.5A
Input voltage: 2.24...13.5V
Tolerance: ±2.5%
Output voltage: 2.8V
Type of integrated circuit: voltage regulator
Case: D2PAK-5
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| BSH2N7002KT1G |
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 1.72 грн |
| TIP117G |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: PNP
Collector current: 2A
Power dissipation: 2W
Collector-emitter voltage: 100V
Polarisation: bipolar
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: PNP
Collector current: 2A
Power dissipation: 2W
Collector-emitter voltage: 100V
Polarisation: bipolar
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.52 грн |
| 10+ | 51.35 грн |
| 33+ | 28.33 грн |
| 91+ | 26.82 грн |
| 100+ | 25.79 грн |
| 2SA2039-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2125-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2125-TD-H |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2210-1E |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 30W
Collector-emitter voltage: 50V
Current gain: 150...450
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 30W
Collector-emitter voltage: 50V
Current gain: 150...450
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
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| 2SA2210-EPN-1E |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 2W
Collector-emitter voltage: 50V
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 2W
Collector-emitter voltage: 50V
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
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| NSV2SA2029M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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| FGHL75T65MQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
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| FGHL75T65LQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
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| FGHL75T65MQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
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| AFGHL75T65SQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
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| AFGHL75T65SQ |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| AFGHL75T65SQDC |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| 2N5190G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 4A; 40W; TO225
Type of transistor: NPN
Mounting: THT
Case: TO225
Collector current: 4A
Power dissipation: 40W
Current gain: 25...100
Collector-emitter voltage: 40V
Frequency: 2MHz
Polarisation: bipolar
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 4A; 40W; TO225
Type of transistor: NPN
Mounting: THT
Case: TO225
Collector current: 4A
Power dissipation: 40W
Current gain: 25...100
Collector-emitter voltage: 40V
Frequency: 2MHz
Polarisation: bipolar
Kind of package: bulk
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| LM1117MPX-ADJNOPB |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM1117IMPX-ADJNOPB |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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| NCV8154MW120280TBG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 2
Case: DFN10
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 2
Case: DFN10
Application: automotive industry
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| NE521DR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
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| S2SC4617G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.125W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.125W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
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| MELMUR1620CTG |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 67.52 грн |
| 500+ | 56.35 грн |
| MUN2211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 5750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.82 грн |
| 54+ | 7.46 грн |
| 60+ | 6.67 грн |
| 83+ | 4.81 грн |
| 92+ | 4.32 грн |
| 100+ | 4.00 грн |
| 500+ | 2.75 грн |
| 504+ | 1.86 грн |
| 1385+ | 1.75 грн |
| MARSMMUN2211LT1G |
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 1.03 грн |
| SE5532AD8R2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
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| MMBT4403M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MMBT4403WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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од. на суму грн.
| MMBT5401LT3G |
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на замовлення 160000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.59 грн |
| NCP1079BBP130G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
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| NVLJWD040N06CLTAG |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 54A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 54A
товару немає в наявності
В кошику
од. на суму грн.
| GRUBSS138 |
на замовлення 474000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.26 грн |
| MARBSS138LT1G |
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.99 грн |
| FAN7930CMX-G |
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на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 39.74 грн |
| MM3Z10VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 6973 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 71+ | 5.63 грн |
| 100+ | 3.97 грн |
| 118+ | 3.38 грн |
| 500+ | 2.31 грн |
| 676+ | 1.37 грн |
| 1860+ | 1.30 грн |
| 6000+ | 1.29 грн |
| MM3Z12VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.31 грн |
| 90+ | 4.76 грн |
| MM3Z18VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 81+ | 4.92 грн |
| 148+ | 2.70 грн |
| 193+ | 2.06 грн |
| 265+ | 1.50 грн |
| 500+ | 1.21 грн |
| 1000+ | 1.10 грн |







