| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| NTBG025N065SC1 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 284A Power dissipation: 197W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||
| NTBLS1D5N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 161W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Drain current: 312A Kind of channel: enhancement Drain-source voltage: 100V Gate-source voltage: ±20V On-state resistance: 1.5mΩ Pulsed drain current: 2055A Gate charge: 131nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| NTBLS1D7N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 272A Pulsed drain current: 2137A Power dissipation: 147W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
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FDG1024NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: SC70-6; SC88; SOT363 On-state resistance: 389mΩ Mounting: SMD Power dissipation: 0.36W Gate charge: 2.6nC Polarisation: unipolar Technology: PowerTrench® Drain current: 1.2A Kind of channel: enhancement Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCB260N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 90W Gate charge: 24nC On-state resistance: 0.26Ω Pulsed drain current: 30A |
на замовлення 736 шт: термін постачання 14-30 дні (днів) |
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FCD260N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Case: DPAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 90W Gate charge: 24nC On-state resistance: 0.26Ω Pulsed drain current: 30A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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NTPF360N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Case: TO220FP Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 26W Gate charge: 17.5nC On-state resistance: 0.36Ω Pulsed drain current: 28A |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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2N7000 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
на замовлення 772 шт: термін постачання 14-30 дні (днів) |
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NTP165N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 53A Power dissipation: 142W Gate charge: 35nC Drain current: 19A |
на замовлення 81 шт: термін постачання 14-30 дні (днів) |
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| NTBLS4D0N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 316W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape On-state resistance: 4.4mΩ Pulsed drain current: 2255A Gate charge: 90.4nC Drain current: 187A Kind of channel: enhancement Drain-source voltage: 150V Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
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1N5388BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 200V; CASE017AA; single diode; reel,tape; 1N53xxB Tolerance: ±5% Mounting: THT Manufacturer series: 1N53xxB Power dissipation: 5W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE017AA Zener voltage: 200V Type of diode: Zener |
на замовлення 3608 шт: термін постачання 14-30 дні (днів) |
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| NXH450N65L4Q2F2S1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC Collector current: 450A Case: PIM40 Gate-emitter voltage: ±20V Mechanical mounting: screw Application: for UPS; Inverter Max. off-state voltage: 650V Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Type of semiconductor module: IGBT Technology: SiC |
товару немає в наявності |
Мінімальне замовлення: 36 шт В кошику од. на суму грн. | |||||||||||||||||
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MC78M15CDTG | ONSEMI |
 Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC78M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 17.5...30V |
на замовлення 464 шт: термін постачання 14-30 дні (днів) |
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MC78M15CTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 15V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC78M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm Input voltage: 17.5...30V |
на замовлення 156 шт: термін постачання 14-30 дні (днів) |
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| LM2596DSADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM2596TVADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SS8550CTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LM358DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: Micro8 Operating temperature: 0...70°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT3906TT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSVMMBT3906TT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM339DTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: TSSOP14 Operating temperature: 0...70°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LM339EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: SO14 Operating temperature: 0...70°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NGTB15N120FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3 Collector current: 15A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Kind of package: tube Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 147W Gate charge: 109nC Type of transistor: IGBT |
на замовлення 120 шт: термін постачання 14-30 дні (днів) |
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NSVBC817-40WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2902DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 10mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: TSSOP14 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 200nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC78M12ACDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV78M12BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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J112-D26Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA On-state resistance: 50Ω Mounting: THT Gate current: 50mA Power dissipation: 0.625W Polarisation: unipolar Drain current: 5mA Type of transistor: N-JFET Gate-source voltage: -35V Kind of package: tape Case: TO92 |
на замовлення 86 шт: термін постачання 14-30 дні (днів) |
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J112-D27Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA On-state resistance: 50Ω Mounting: THT Gate current: 50mA Power dissipation: 0.625W Polarisation: unipolar Drain current: 5mA Type of transistor: N-JFET Gate-source voltage: -35V Kind of package: tape Case: TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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J112-D74Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA On-state resistance: 50Ω Mounting: THT Gate current: 50mA Power dissipation: 0.625W Polarisation: unipolar Drain current: 5mA Type of transistor: N-JFET Gate-source voltage: -35V Kind of package: Ammo Pack Case: TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NGTB40N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 183W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 170nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LM393DMR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape Input offset voltage: 5mV Type of integrated circuit: comparator Operating temperature: 0...70°C Number of comparators: 2 Input bias current: 20nA Kind of package: reel; tape Input offset current: 5nA Case: Micro8 Operating voltage: 2...36V Kind of comparator: universal Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM2576TV-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2576TV-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SC5200OTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 17A Power dissipation: 150W Case: TO264 Current gain: 80...160 Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
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NCV78M05ABDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV78M05BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LMV321SN3T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA Integrated circuit features: low voltage; rail-to-rail output Input bias current: 1nA Voltage supply range: 2.7...5V DC Kind of package: reel; tape Input offset current: 1nA Case: TSOP5 Number of channels: single; 1 Bandwidth: 1MHz Mounting: SMT Input offset voltage: 9mV Slew rate: 1V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LMV321SQ3T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; SC70-5; 9mV Integrated circuit features: low voltage; rail-to-rail output Input bias current: 1nA Voltage supply range: 2.7...5V DC Kind of package: reel; tape Input offset current: 1nA Case: SC70-5 Number of channels: single; 1 Bandwidth: 1MHz Mounting: SMT Input offset voltage: 9mV Slew rate: 1V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LMV321ISN3T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC Kind of package: reel; tape Input offset current: 1nA Case: TSOP5 Number of channels: single; 1 Bandwidth: 1MHz Mounting: SMT Input offset voltage: 9mV Slew rate: 1V/μs Type of integrated circuit: operational amplifier Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TIP35CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO247-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 25A Power dissipation: 125W Case: TO247-3 Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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NCV78L08ABDR2G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCP130N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 84A; 278W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 84A Power dissipation: 278W Gate charge: 54nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LMV358IDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 2.7...5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail output Input offset voltage: 9mV Kind of package: reel; tape Input bias current: 1nA Input offset current: 1nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2N3055AG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 15A; 115W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 15A Power dissipation: 115W Case: TO3; TO204 Current gain: 10...70 Mounting: THT Kind of package: in-tray Frequency: 2.5MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCP150N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 298W Case: TO220-3 Mounting: THT Gate charge: 72nC Kind of package: tube Drain-source voltage: 650V Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: 72A Polarisation: unipolar Drain current: 24A Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
| NGTB50N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 208W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 208W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.22µC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2N5550TAR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 50...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5401YBU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 40...200 Mounting: THT Kind of package: bulk Frequency: 100MHz |
на замовлення 19361 шт: термін постачання 14-30 дні (днів) |
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LP2951ACD-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LP2951ACDM-3.0RG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; Micro8; SMD Case: Micro8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Output voltage: 3V Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LP2951ACDMR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...29V Output current: 0.1A Case: Micro8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TIP35AG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 25A; 125W; TO247-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 25A Power dissipation: 125W Case: TO247-3 Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM258DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8 Input offset voltage: 7mV Type of integrated circuit: operational amplifier Operating temperature: -25...85°C Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape Input offset current: 100nA Case: Micro8 Number of channels: dual; 2 Bandwidth: 1MHz Mounting: SMT |
на замовлення 3880 шт: термін постачання 14-30 дні (днів) |
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FCP11N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 125W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 33A Gate charge: 40nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT5401M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 60mA Power dissipation: 0.25W Case: SOT723 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT5401WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSVMMBT5401M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 60mA Power dissipation: 0.25W Case: SOT723 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSVMMBT5401WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LM2903EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape Number of comparators: 2 Input bias current: 20nA Kind of package: reel; tape Input offset current: 5nA Case: SO8 Operating voltage: 2...36V Kind of comparator: universal Mounting: SMT Input offset voltage: 7mV Type of integrated circuit: comparator Operating temperature: -40...105°C |
товару немає в наявності |
В кошику од. на суму грн. |
| NTBG025N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTBLS1D5N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 161W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Drain current: 312A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Pulsed drain current: 2055A
Gate charge: 131nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 161W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Drain current: 312A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Pulsed drain current: 2055A
Gate charge: 131nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NTBLS1D7N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Power dissipation: 147W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Power dissipation: 147W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| FDG1024NZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 389mΩ
Mounting: SMD
Power dissipation: 0.36W
Gate charge: 2.6nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 389mΩ
Mounting: SMD
Power dissipation: 0.36W
Gate charge: 2.6nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| FCB260N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 24nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 24nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
на замовлення 736 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.32 грн |
| 10+ | 175.58 грн |
| 25+ | 154.16 грн |
| 100+ | 142.17 грн |
| FCD260N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 24nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 90W
Gate charge: 24nC
On-state resistance: 0.26Ω
Pulsed drain current: 30A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NTPF360N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 26W
Gate charge: 17.5nC
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 26W
Gate charge: 17.5nC
On-state resistance: 0.36Ω
Pulsed drain current: 28A
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 2N7000 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 772 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.66 грн |
| 14+ | 30.66 грн |
| 16+ | 27.06 грн |
| 100+ | 16.10 грн |
| 200+ | 13.87 грн |
| 500+ | 11.56 грн |
| NTP165N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 53A
Power dissipation: 142W
Gate charge: 35nC
Drain current: 19A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 53A
Power dissipation: 142W
Gate charge: 35nC
Drain current: 19A
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.81 грн |
| 10+ | 215.83 грн |
| 50+ | 203.84 грн |
| NTBLS4D0N15MC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.4mΩ
Pulsed drain current: 2255A
Gate charge: 90.4nC
Drain current: 187A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.4mΩ
Pulsed drain current: 2255A
Gate charge: 90.4nC
Drain current: 187A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 1N5388BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; CASE017AA; single diode; reel,tape; 1N53xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N53xxB
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 200V
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; CASE017AA; single diode; reel,tape; 1N53xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N53xxB
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 200V
Type of diode: Zener
на замовлення 3608 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.35 грн |
| 18+ | 23.98 грн |
| 21+ | 20.47 грн |
| 100+ | 14.05 грн |
| 500+ | 13.19 грн |
| NXH450N65L4Q2F2S1G |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Application: for UPS; Inverter
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Technology: SiC
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Application: for UPS; Inverter
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Technology: SiC
товару немає в наявності
Мінімальне замовлення: 36 шт
В кошику
од. на суму грн.
| MC78M15CDTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
на замовлення 464 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 20.29 грн |
| 27+ | 16.36 грн |
| 31+ | 14.13 грн |
| 75+ | 11.82 грн |
| 300+ | 10.79 грн |
| MC78M15CTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
на замовлення 156 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.51 грн |
| 15+ | 28.61 грн |
| 25+ | 25.35 грн |
| 50+ | 23.38 грн |
| 100+ | 21.67 грн |
| LM2596DSADJR4G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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| LM2596TVADJG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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| SS8550CTA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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| LM358DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 150nA
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| MMBT3906TT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| NSVMMBT3906TT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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| LM339DTBR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| LM339EDR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| NGTB15N120FL2WG |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Collector current: 15A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 147W
Gate charge: 109nC
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Collector current: 15A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 147W
Gate charge: 109nC
Type of transistor: IGBT
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 479.62 грн |
| 10+ | 288.63 грн |
| NSVBC817-40WT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| LM2902DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
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| MC78M12ACDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| NCV78M12BDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| J112-D26Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
On-state resistance: 50Ω
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 5mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: tape
Case: TO92
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
On-state resistance: 50Ω
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 5mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: tape
Case: TO92
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.89 грн |
| 15+ | 30.15 грн |
| 16+ | 28.43 грн |
| 50+ | 23.90 грн |
| J112-D27Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
On-state resistance: 50Ω
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 5mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: tape
Case: TO92
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
On-state resistance: 50Ω
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 5mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: tape
Case: TO92
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| J112-D74Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
On-state resistance: 50Ω
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 5mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: Ammo Pack
Case: TO92
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
On-state resistance: 50Ω
Mounting: THT
Gate current: 50mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 5mA
Type of transistor: N-JFET
Gate-source voltage: -35V
Kind of package: Ammo Pack
Case: TO92
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| NGTB40N65FL2WG |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
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| LM393DMR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape
Input offset voltage: 5mV
Type of integrated circuit: comparator
Operating temperature: 0...70°C
Number of comparators: 2
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
Case: Micro8
Operating voltage: 2...36V
Kind of comparator: universal
Mounting: SMT
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape
Input offset voltage: 5mV
Type of integrated circuit: comparator
Operating temperature: 0...70°C
Number of comparators: 2
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
Case: Micro8
Operating voltage: 2...36V
Kind of comparator: universal
Mounting: SMT
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| LM2576TV-5G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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| LM2576TV-ADJG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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| 2SC5200OTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 80...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 80...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 407.68 грн |
| 5+ | 308.33 грн |
| 10+ | 272.36 грн |
| 25+ | 239.81 грн |
| NCV78M05ABDTRKG |
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV78M05BDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| LMV321SN3T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA
Integrated circuit features: low voltage; rail-to-rail output
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Kind of package: reel; tape
Input offset current: 1nA
Case: TSOP5
Number of channels: single; 1
Bandwidth: 1MHz
Mounting: SMT
Input offset voltage: 9mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA
Integrated circuit features: low voltage; rail-to-rail output
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Kind of package: reel; tape
Input offset current: 1nA
Case: TSOP5
Number of channels: single; 1
Bandwidth: 1MHz
Mounting: SMT
Input offset voltage: 9mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
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| LMV321SQ3T2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; SC70-5; 9mV
Integrated circuit features: low voltage; rail-to-rail output
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Kind of package: reel; tape
Input offset current: 1nA
Case: SC70-5
Number of channels: single; 1
Bandwidth: 1MHz
Mounting: SMT
Input offset voltage: 9mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; SC70-5; 9mV
Integrated circuit features: low voltage; rail-to-rail output
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Kind of package: reel; tape
Input offset current: 1nA
Case: SC70-5
Number of channels: single; 1
Bandwidth: 1MHz
Mounting: SMT
Input offset voltage: 9mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
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| LMV321ISN3T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Kind of package: reel; tape
Input offset current: 1nA
Case: TSOP5
Number of channels: single; 1
Bandwidth: 1MHz
Mounting: SMT
Input offset voltage: 9mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Kind of package: reel; tape
Input offset current: 1nA
Case: TSOP5
Number of channels: single; 1
Bandwidth: 1MHz
Mounting: SMT
Input offset voltage: 9mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...125°C
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| TIP35CG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.59 грн |
| 3+ | 150.74 грн |
| 10+ | 123.33 грн |
| NCV78L08ABDR2G |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| FCP130N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 84A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Power dissipation: 278W
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 84A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Power dissipation: 278W
Gate charge: 54nC
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| LMV358IDR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.7...5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.7...5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
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| 2N3055AG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 10...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 10...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
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| FCP150N65F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 298W
Case: TO220-3
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Drain-source voltage: 650V
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 72A
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 298W
Case: TO220-3
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Drain-source voltage: 650V
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 72A
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
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Мінімальне замовлення: 800 шт
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| NGTB50N65FL2WG |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 208W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 208W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 208W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 208W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
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| 2N5550TAR |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
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| 2N5401YBU |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
на замовлення 19361 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 11.07 грн |
| 90+ | 4.80 грн |
| 102+ | 4.22 грн |
| 1000+ | 3.64 грн |
| 5000+ | 3.43 грн |
| 10000+ | 3.19 грн |
| LP2951ACD-3.0R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LP2951ACDM-3.0RG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; Micro8; SMD
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output voltage: 3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; Micro8; SMD
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output voltage: 3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
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| LP2951ACDMR2G |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| TIP35AG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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| LM258DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Input offset voltage: 7mV
Type of integrated circuit: operational amplifier
Operating temperature: -25...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 100nA
Case: Micro8
Number of channels: dual; 2
Bandwidth: 1MHz
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Input offset voltage: 7mV
Type of integrated circuit: operational amplifier
Operating temperature: -25...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 100nA
Case: Micro8
Number of channels: dual; 2
Bandwidth: 1MHz
Mounting: SMT
на замовлення 3880 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.68 грн |
| 36+ | 12.16 грн |
| 39+ | 11.13 грн |
| 44+ | 9.76 грн |
| 100+ | 8.31 грн |
| 250+ | 7.62 грн |
| 500+ | 7.28 грн |
| 1000+ | 7.02 грн |
| FCP11N60F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 125W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 33A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 125W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 33A
Gate charge: 40nC
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| MMBT5401M3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| MMBT5401WT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| NSVMMBT5401M3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NSVMMBT5401WT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| LM2903EDR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Number of comparators: 2
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
Case: SO8
Operating voltage: 2...36V
Kind of comparator: universal
Mounting: SMT
Input offset voltage: 7mV
Type of integrated circuit: comparator
Operating temperature: -40...105°C
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Number of comparators: 2
Input bias current: 20nA
Kind of package: reel; tape
Input offset current: 5nA
Case: SO8
Operating voltage: 2...36V
Kind of comparator: universal
Mounting: SMT
Input offset voltage: 7mV
Type of integrated circuit: comparator
Operating temperature: -40...105°C
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