| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC14511BDR2G | ONSEMI |
Category: LatchesDescription: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC14511BDWR2G | ONSEMI |
Category: LatchesDescription: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SO16WB Operating temperature: -55...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVS3GB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVHPM120T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Application: automotive industry Case: POWERMITE Mounting: SMD Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Reverse recovery time: 50ns Load current: 1A Max. forward voltage: 1.1V Max. load current: 2A Max. forward impulse current: 30A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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H11L1M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Case: DIP6 Transfer rate: 1Mbps Turn-on time: 650ns Turn-off time: 1.2µs Slew rate: 5.3kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTBG028N170M1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 53A Pulsed drain current: 195A Power dissipation: 214W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 222nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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В кошику од. на суму грн. | |||||||||||||||||
| NVA4001NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75 Case: SC75 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Version: ESD Kind of channel: enhancement On-state resistance: 3Ω Gate-source voltage: ±10V Drain-source voltage: 20V Pulsed drain current: 0.714A Polarisation: unipolar Drain current: 0.238A Power dissipation: 0.3W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC14053BDG | ONSEMI |
Category: Integrated circuits - UnclassifiedDescription: MC14053BDG |
на замовлення 3932 шт: термін постачання 21-30 дні (днів) |
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1N5233B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6V; bulk; CASE017AG; single diode; 5uA; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N52xxB Kind of package: bulk |
на замовлення 4356 шт: термін постачання 21-30 дні (днів) |
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1N5230BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Leakage current: 5µA |
на замовлення 4866 шт: термін постачання 21-30 дні (днів) |
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1N5235BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode; 3uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.8V Leakage current: 3µA Manufacturer series: 1N52xxB |
на замовлення 4859 шт: термін постачання 21-30 дні (днів) |
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1N5250B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA Case: CASE017AG Mounting: THT Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.1µA Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 20V Manufacturer series: 1N52xxB Kind of package: bulk |
на замовлення 4930 шт: термін постачання 21-30 дні (днів) |
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| 1N5231CTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5235B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 3uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: bulk Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.8V Leakage current: 3µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5233BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N52xxB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5234BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.2V Leakage current: 5µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5237BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode; 3uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 8.2V Leakage current: 3µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5231C | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5234C | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode; 5uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: bulk Case: DO35 Power dissipation: 0.5W Tolerance: ±2% Zener voltage: 6.2V Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5370BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 56V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 1N5370BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 56V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 56V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTP011N15MC | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 74.3A; Idm: 374A; 136.4W Type of transistor: N-MOSFET Kind of channel: enhancement Mounting: THT Case: TO220-3 Kind of package: tube Polarisation: unipolar Gate charge: 37nC On-state resistance: 10.9mΩ Drain current: 74.3A Gate-source voltage: ±20V Power dissipation: 136.4W Drain-source voltage: 150V Pulsed drain current: 374A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM3Z12VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 4666 шт: термін постачання 21-30 дні (днів) |
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SZMM3Z12VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G Application: automotive industry |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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| 1N5927BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: bulk Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N59xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PCA9535ECMTTXG | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24 Type of integrated circuit: interface Mounting: SMD Case: WQFN24 Supply voltage: 1.65...5.5V DC Interface: I2C; SMBus Integrated circuit features: PWM Operating temperature: -55...125°C Kind of package: reel; tape Number of channels: 16 Kind of integrated circuit: I/O expander Application: for LED applications Frequency: 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PCA9535EDWR2G | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24 Type of integrated circuit: interface Mounting: SMD Case: SO24 Supply voltage: 1.65...5.5V DC Interface: I2C; SMBus Integrated circuit features: PWM Operating temperature: -55...125°C Kind of package: reel; tape Number of channels: 16 Kind of integrated circuit: I/O expander Application: for LED applications Frequency: 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAV70 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC34164P-5G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| NCP51200MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: max. 150°C Application: for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V DC Output voltage: -0.1...3.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV51200MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: max. 150°C Application: automotive industry; for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V DC Output voltage: -0.1...3.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV51200MWTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: max. 150°C Application: automotive industry; for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V DC Output voltage: -0.1...3.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NHP120SFT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD123F; Ufmax: 1V; reel,tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 25ns Load current: 1A Max. forward voltage: 1V Max. off-state voltage: 200V Type of diode: rectifying Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NRVHP120SFT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 1.1V Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 50ns Load current: 1A Max. forward voltage: 1.1V Max. load current: 2A Max. forward impulse current: 30A Max. off-state voltage: 200V Application: automotive industry Type of diode: rectifying Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HCT241ADTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Supply voltage: 4.5...5.5V DC Quiescent current: 160µA |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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| FPF2701MPX | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C; ESD Type of integrated circuit: power switch Case: WDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Integrated circuit features: thermal protection On-state resistance: 88mΩ Supply voltage: 2.8...36V DC Version: ESD Active logical level: low |
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В кошику од. на суму грн. | |||||||||||||||||
| FPF2702MPX | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C; ESD Type of integrated circuit: power switch Case: WDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Integrated circuit features: thermal protection On-state resistance: 88mΩ Supply voltage: 2.8...36V DC Version: ESD Active logical level: low |
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В кошику од. на суму грн. | |||||||||||||||||
| FXLP4555MPX | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter,translator; Ch: 1; 1.65÷5.5VDC; SMD Case: MLP16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Number of inputs: 1 Number of outputs: 1 Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Application: for smart card application Kind of integrated circuit: level shifter; translator |
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В кошику од. на суму грн. | |||||||||||||||||
| NVMFS5C468NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 151A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 151A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74VHCT245ADWG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB Type of integrated circuit: digital Manufacturer series: VHCT Family: VHCT Technology: CMOS; TTL Case: SO20WB Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of integrated circuit: bus transceiver; octal |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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74VHCT245AMTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Technology: CMOS; TTL Case: TSSOP20 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of output: 3-state Kind of integrated circuit: buffer; line driver; non-inverting |
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В кошику од. на суму грн. | ||||||||||||||||
| 1N5381BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA Kind of package: reel; tape Case: CASE017AA Semiconductor structure: single diode Mounting: THT Type of diode: Zener Leakage current: 0.5µA Tolerance: ±5% Power dissipation: 5W Zener voltage: 130V Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| US1FFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 1A; 50ns; SOD123F; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.95V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NRVUS1FFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 1A; 50ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NRVBM120ET1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; POWERMITE; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: POWERMITE Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.595V Max. load current: 2A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NRVBM120LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; POWERMITE; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: POWERMITE Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.67V Max. load current: 2A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSA708YBU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.7A Power dissipation: 0.8W Case: TO92 Current gain: 120...240 Mounting: THT Kind of package: bulk Frequency: 50MHz |
на замовлення 9670 шт: термін постачання 21-30 дні (днів) |
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| NJT4030PT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Mounting: SMD Type of transistor: PNP Power dissipation: 2W Collector current: 3A Collector-emitter voltage: 40V Current gain: 200...400 Frequency: 100MHz Kind of package: reel; tape Case: SOT223-4; TO261-4 Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSS40300MZ4T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Mounting: SMD Type of transistor: PNP Power dissipation: 2W Collector current: 3A Collector-emitter voltage: 40V Current gain: 175...350 Kind of package: reel; tape Case: SOT223-4; TO261-4 Polarisation: bipolar |
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| NSS40300MZ4T3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Mounting: SMD Type of transistor: PNP Power dissipation: 2W Collector current: 3A Collector-emitter voltage: 40V Current gain: 175...350 Kind of package: reel; tape Case: SOT223-4; TO261-4 Polarisation: bipolar |
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В кошику од. на суму грн. | |||||||||||||||||
| NSS40301MZ4T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Mounting: SMD Type of transistor: NPN Power dissipation: 2W Collector current: 3A Collector-emitter voltage: 40V Current gain: 200...500 Frequency: 100MHz Kind of package: reel; tape Case: SOT223-4; TO261-4 Polarisation: bipolar |
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В кошику од. на суму грн. | |||||||||||||||||
| NSS40301MZ4T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Mounting: SMD Type of transistor: NPN Power dissipation: 2W Collector current: 3A Collector-emitter voltage: 40V Current gain: 200...500 Frequency: 100MHz Kind of package: reel; tape Case: SOT223-4; TO261-4 Polarisation: bipolar |
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В кошику од. на суму грн. | |||||||||||||||||
| NSV40301MZ4T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Mounting: SMD Type of transistor: NPN Power dissipation: 2W Collector current: 3A Collector-emitter voltage: 40V Current gain: 200...500 Frequency: 100MHz Kind of package: reel; tape Case: SOT223-4; TO261-4 Application: automotive industry Polarisation: bipolar |
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| NJV4030PT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Mounting: SMD Type of transistor: PNP Power dissipation: 2W Collector current: 3A Collector-emitter voltage: 40V Current gain: 200...400 Frequency: 100MHz Kind of package: reel; tape Case: SOT223-4; TO261-4 Application: automotive industry Polarisation: bipolar |
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В кошику од. на суму грн. | |||||||||||||||||
| NSV40300MZ4T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Mounting: SMD Type of transistor: PNP Power dissipation: 2W Collector current: 3A Collector-emitter voltage: 40V Current gain: 175...350 Kind of package: reel; tape Case: SOT223-4; TO261-4 Application: automotive industry Polarisation: bipolar |
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В кошику од. на суму грн. | |||||||||||||||||
| NSS40300MDR2G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8 Mounting: SMD Type of transistor: PNP x2 Power dissipation: 0.576W Collector current: 3A Collector-emitter voltage: 40V Current gain: 220 Frequency: 100MHz Kind of package: reel; tape Case: SO8 Polarisation: bipolar |
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В кошику од. на суму грн. | |||||||||||||||||
| NSS40300DDR2G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8 Mounting: SMD Type of transistor: PNP x2 Power dissipation: 0.576W Collector current: 3A Collector-emitter voltage: 40V Current gain: 220 Frequency: 100MHz Kind of package: reel; tape Case: SO8 Application: automotive industry Polarisation: bipolar |
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В кошику од. на суму грн. | |||||||||||||||||
| NSS40301MDR2G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 3A; 0.576W; SO8 Mounting: SMD Type of transistor: NPN x2 Power dissipation: 0.576W Collector current: 3A Collector-emitter voltage: 40V Current gain: 200 Frequency: 100MHz Kind of package: reel; tape Case: SO8 Application: automotive industry Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSV40300MDR2G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8 Mounting: SMD Type of transistor: PNP x2 Power dissipation: 0.576W Collector current: 3A Collector-emitter voltage: 40V Current gain: 220 Frequency: 100MHz Kind of package: reel; tape Case: SO8 Application: automotive industry Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSV40301MDR2G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 3A; 0.576W; SO8 Mounting: SMD Type of transistor: NPN x2 Power dissipation: 0.576W Collector current: 3A Collector-emitter voltage: 40V Current gain: 200 Frequency: 100MHz Kind of package: reel; tape Case: SO8 Application: automotive industry Polarisation: bipolar |
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В кошику од. на суму грн. |
| MC14511BDR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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| MC14511BDWR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Kind of package: reel; tape
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| NRVS3GB |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
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| NRVHPM120T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Application: automotive industry
Case: POWERMITE
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 2A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Application: automotive industry
Case: POWERMITE
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 2A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
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| H11L1M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Transfer rate: 1Mbps
Turn-on time: 650ns
Turn-off time: 1.2µs
Slew rate: 5.3kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Transfer rate: 1Mbps
Turn-on time: 650ns
Turn-off time: 1.2µs
Slew rate: 5.3kV/μs
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| NTBG028N170M1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 53A
Pulsed drain current: 195A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 53A
Pulsed drain current: 195A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NVA4001NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
On-state resistance: 3Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Pulsed drain current: 0.714A
Polarisation: unipolar
Drain current: 0.238A
Power dissipation: 0.3W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
On-state resistance: 3Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Pulsed drain current: 0.714A
Polarisation: unipolar
Drain current: 0.238A
Power dissipation: 0.3W
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| MC14053BDG |
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на замовлення 3932 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 48+ | 17.81 грн |
| 1N5233B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; bulk; CASE017AG; single diode; 5uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; bulk; CASE017AG; single diode; 5uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: bulk
на замовлення 4356 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.95 грн |
| 100+ | 4.03 грн |
| 136+ | 2.97 грн |
| 213+ | 1.90 грн |
| 500+ | 1.32 грн |
| 1000+ | 1.24 грн |
| 1N5230BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Leakage current: 5µA
на замовлення 4866 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.95 грн |
| 103+ | 3.95 грн |
| 135+ | 3.00 грн |
| 204+ | 1.98 грн |
| 500+ | 1.34 грн |
| 1000+ | 1.24 грн |
| 1N5235BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Leakage current: 3µA
Manufacturer series: 1N52xxB
на замовлення 4859 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.95 грн |
| 114+ | 3.55 грн |
| 136+ | 2.97 грн |
| 179+ | 2.26 грн |
| 250+ | 1.88 грн |
| 500+ | 1.62 грн |
| 1000+ | 1.40 грн |
| 1N5250B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
Kind of package: bulk
на замовлення 4930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.95 грн |
| 117+ | 3.47 грн |
| 157+ | 2.58 грн |
| 242+ | 1.67 грн |
| 500+ | 1.24 грн |
| 1N5231CTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 5µA
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| 1N5235B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Leakage current: 3µA
Manufacturer series: 1N52xxB
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| 1N5233BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
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| 1N5234BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
Leakage current: 5µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.2V
Leakage current: 5µA
Manufacturer series: 1N52xxB
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| 1N5237BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 8.2V
Leakage current: 3µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 8.2V
Leakage current: 3µA
Manufacturer series: 1N52xxB
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| 1N5231C |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 5µA
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| 1N5234C |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: DO35
Power dissipation: 0.5W
Tolerance: ±2%
Zener voltage: 6.2V
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: DO35
Power dissipation: 0.5W
Tolerance: ±2%
Zener voltage: 6.2V
Leakage current: 5µA
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| 1N5370BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 56V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 56V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5370BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 56V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 56V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| NTP011N15MC |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74.3A; Idm: 374A; 136.4W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 10.9mΩ
Drain current: 74.3A
Gate-source voltage: ±20V
Power dissipation: 136.4W
Drain-source voltage: 150V
Pulsed drain current: 374A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74.3A; Idm: 374A; 136.4W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 10.9mΩ
Drain current: 74.3A
Gate-source voltage: ±20V
Power dissipation: 136.4W
Drain-source voltage: 150V
Pulsed drain current: 374A
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| MM3Z12VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 4666 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.08 грн |
| 100+ | 4.03 грн |
| 142+ | 2.86 грн |
| 166+ | 2.44 грн |
| 500+ | 1.71 грн |
| 1000+ | 1.48 грн |
| 1500+ | 1.35 грн |
| 3000+ | 1.32 грн |
| SZMM3Z12VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 40.34 грн |
| 1N5927BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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| PCA9535ECMTTXG |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Type of integrated circuit: interface
Mounting: SMD
Case: WQFN24
Supply voltage: 1.65...5.5V DC
Interface: I2C; SMBus
Integrated circuit features: PWM
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 16
Kind of integrated circuit: I/O expander
Application: for LED applications
Frequency: 1MHz
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Type of integrated circuit: interface
Mounting: SMD
Case: WQFN24
Supply voltage: 1.65...5.5V DC
Interface: I2C; SMBus
Integrated circuit features: PWM
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 16
Kind of integrated circuit: I/O expander
Application: for LED applications
Frequency: 1MHz
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| PCA9535EDWR2G |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Type of integrated circuit: interface
Mounting: SMD
Case: SO24
Supply voltage: 1.65...5.5V DC
Interface: I2C; SMBus
Integrated circuit features: PWM
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 16
Kind of integrated circuit: I/O expander
Application: for LED applications
Frequency: 1MHz
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Type of integrated circuit: interface
Mounting: SMD
Case: SO24
Supply voltage: 1.65...5.5V DC
Interface: I2C; SMBus
Integrated circuit features: PWM
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 16
Kind of integrated circuit: I/O expander
Application: for LED applications
Frequency: 1MHz
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| BAV70 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
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| MC34164P-5G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 28.41 грн |
| NCP51200MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
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| NCV51200MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
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| NCV51200MWTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
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| NHP120SFT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD123F; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 25ns
Load current: 1A
Max. forward voltage: 1V
Max. off-state voltage: 200V
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD123F; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 25ns
Load current: 1A
Max. forward voltage: 1V
Max. off-state voltage: 200V
Type of diode: rectifying
Kind of package: reel; tape
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| NRVHP120SFT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 1.1V
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 50ns
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 2A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 1.1V
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 50ns
Load current: 1A
Max. forward voltage: 1.1V
Max. load current: 2A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
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| MC74HCT241ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 103.39 грн |
| 10+ | 77.45 грн |
| 75+ | 65.19 грн |
| FPF2701MPX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C; ESD
Type of integrated circuit: power switch
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Integrated circuit features: thermal protection
On-state resistance: 88mΩ
Supply voltage: 2.8...36V DC
Version: ESD
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C; ESD
Type of integrated circuit: power switch
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Integrated circuit features: thermal protection
On-state resistance: 88mΩ
Supply voltage: 2.8...36V DC
Version: ESD
Active logical level: low
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| FPF2702MPX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C; ESD
Type of integrated circuit: power switch
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Integrated circuit features: thermal protection
On-state resistance: 88mΩ
Supply voltage: 2.8...36V DC
Version: ESD
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C; ESD
Type of integrated circuit: power switch
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Integrated circuit features: thermal protection
On-state resistance: 88mΩ
Supply voltage: 2.8...36V DC
Version: ESD
Active logical level: low
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| FXLP4555MPX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter,translator; Ch: 1; 1.65÷5.5VDC; SMD
Case: MLP16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Number of inputs: 1
Number of outputs: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Application: for smart card application
Kind of integrated circuit: level shifter; translator
Category: Level translators
Description: IC: digital; level shifter,translator; Ch: 1; 1.65÷5.5VDC; SMD
Case: MLP16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Number of inputs: 1
Number of outputs: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Application: for smart card application
Kind of integrated circuit: level shifter; translator
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| NVMFS5C468NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 151A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 151A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 151A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 151A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74VHCT245ADWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Manufacturer series: VHCT
Family: VHCT
Technology: CMOS; TTL
Case: SO20WB
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bus transceiver; octal
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Manufacturer series: VHCT
Family: VHCT
Technology: CMOS; TTL
Case: SO20WB
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bus transceiver; octal
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.90 грн |
| 10+ | 68.41 грн |
| 25+ | 58.73 грн |
| 74VHCT245AMTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
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| 1N5381BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 130V
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 130V
Manufacturer series: 1N53xxB
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| US1FFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| NRVUS1FFA |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 30A
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| NRVBM120ET1G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.595V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.595V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| NRVBM120LT1G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| KSA708YBU |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.7A
Power dissipation: 0.8W
Case: TO92
Current gain: 120...240
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.7A
Power dissipation: 0.8W
Case: TO92
Current gain: 120...240
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 9670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.38 грн |
| 33+ | 12.26 грн |
| 39+ | 10.57 грн |
| 47+ | 8.63 грн |
| 100+ | 6.62 грн |
| 500+ | 5.41 грн |
| 1000+ | 5.16 грн |
| 5000+ | 4.68 грн |
| NJT4030PT1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...400
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...400
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
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| NSS40300MZ4T1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 175...350
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 175...350
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
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| NSS40300MZ4T3G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 175...350
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 175...350
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
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| NSS40301MZ4T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: NPN
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...500
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: NPN
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...500
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
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| NSS40301MZ4T3G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: NPN
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...500
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: NPN
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...500
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Polarisation: bipolar
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од. на суму грн.
| NSV40301MZ4T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: NPN
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...500
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Application: automotive industry
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: NPN
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...500
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Application: automotive industry
Polarisation: bipolar
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| NJV4030PT1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...400
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200...400
Frequency: 100MHz
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Application: automotive industry
Polarisation: bipolar
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| NSV40300MZ4T1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 175...350
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 175...350
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Application: automotive industry
Polarisation: bipolar
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| NSS40300MDR2G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Polarisation: bipolar
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| NSS40300DDR2G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Polarisation: bipolar
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| NSS40301MDR2G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: NPN x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: NPN x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Polarisation: bipolar
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| NSV40300MDR2G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: PNP x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 220
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Polarisation: bipolar
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| NSV40301MDR2G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: NPN x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Type of transistor: NPN x2
Power dissipation: 0.576W
Collector current: 3A
Collector-emitter voltage: 40V
Current gain: 200
Frequency: 100MHz
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Polarisation: bipolar
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