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HUF76629D3ST ONSEMI huf76629d3s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 52mΩ
Gate-source voltage: ±16V
Drain current: 20A
Drain-source voltage: 100V
Power dissipation: 150W
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FDT86106LZ FDT86106LZ ONSEMI fdt86106lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 189mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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MMBTA56WT1G MMBTA56WT1G ONSEMI mmbta56wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
46+9.85 грн
50+8.32 грн
100+5.45 грн
500+3.12 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
SMMBTA56LT1G SMMBTA56LT1G ONSEMI mmbta55lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 418 шт:
термін постачання 21-30 дні (днів)
20+23.29 грн
26+16.47 грн
33+12.84 грн
50+10.33 грн
100+8.25 грн
Мінімальне замовлення: 20
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SMMBTA56LT3G ONSEMI mmbta55lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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SMMBTA56WT1G ONSEMI mmbta56wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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SMMBTA56WT3G ONSEMI mmbta56wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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MMBTA56 MMBTA56 ONSEMI MMBTA56-DTE.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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P6KE10A P6KE10A ONSEMI P6KE10A-FAI-DTE.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
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ESD7381MUT5G ONSEMI esd7381-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; X3DFN2; reel,tape
Semiconductor structure: unidirectional
Case: X3DFN2
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Kind of package: reel; tape
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MBR0530 ONSEMI MBR0530.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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SBC846ALT1G SBC846ALT1G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NZT660 ONSEMI nzt660a-d.pdf FAIR-S-A0000083804-1.pdf?t.download=true&u=5oefqw Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
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NZT660A ONSEMI nzt660a-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
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NTTFS6H880NLTAG ONSEMI nttfs6h880nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 83A; 17W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 83A
Power dissipation: 17W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS6H880NLWFTAG ONSEMI nvtfs6h880nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 83A; 17W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 83A
Power dissipation: 17W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS6H880NTAG ONSEMI nvtfs6h880n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS6H880NWFTAG ONSEMI nvtfs6h880n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 16W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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MBR130T3G MBR130T3G ONSEMI mbr130t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Case: SOD123
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GBU4A GBU4A ONSEMI GBU4x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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MMUN2115LT1G MMUN2115LT1G ONSEMI MMUN2115.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
на замовлення 3026 шт:
термін постачання 21-30 дні (днів)
46+9.85 грн
72+5.82 грн
116+3.61 грн
200+3.01 грн
500+2.25 грн
1000+1.70 грн
3000+1.31 грн
Мінімальне замовлення: 46
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1N5368BG 1N5368BG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 842 шт:
термін постачання 21-30 дні (днів)
18+25.97 грн
21+20.29 грн
23+18.30 грн
50+13.89 грн
100+12.81 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
FCP850N80Z ONSEMI fcp850n80z-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 18A; 136W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 18A
Power dissipation: 136W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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FCD850N80Z ONSEMI fcu850n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCPF650N80Z ONSEMI fcpf650n80z-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 24A; 30.5W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 24A
Power dissipation: 30.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
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FCD2250N80Z ONSEMI fcd2250n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 6.5A; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 6.5A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.25Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCPF850N80Z ONSEMI fcpf850n80z-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 18A; 28.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 18A
Power dissipation: 28.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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NTPF450N80S3Z ONSEMI ntpf450n80s3z-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 25A; 29.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 25A
Power dissipation: 29.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 19.3nC
Kind of package: tube
Kind of channel: enhancement
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FCPF2250N80Z ONSEMI FAIR-S-A0002365705-1.pdf?t.download=true&u=5oefqw fcpf2250n80z-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.5A; Idm: 6.5A; 21.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.5A
Pulsed drain current: 6.5A
Power dissipation: 21.9W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.25Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
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NGTB35N65FL2WG ONSEMI ngtb35n65fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector-emitter voltage: 650V
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
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GBU8M GBU8M ONSEMI GBU8x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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DTA124XET1G ONSEMI dta124x-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...130
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
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BZX84C33LT1G BZX84C33LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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SZBZX84C33LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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BZX84C33LT3G BZX84C33LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 9900 шт:
термін постачання 21-30 дні (днів)
63+7.16 грн
105+3.99 грн
208+2.00 грн
500+1.67 грн
1000+1.40 грн
5000+1.34 грн
Мінімальне замовлення: 63
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SZBZX84C33ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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74ACT139MTC 74ACT139MTC ONSEMI 74ACT139-D.PDF FAIRS01311-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Quiescent current: 40µA
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74ACT139MTCX 74ACT139MTCX ONSEMI 74ACT139-D.PDF Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP16; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
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74ACT139SCX 74ACT139SCX ONSEMI 74ACT139-D.PDF 74act139-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SO16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: SO16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
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MC74ACT139DR2G MC74ACT139DR2G ONSEMI MC74AC139-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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MC74ACT139DTR2G ONSEMI MC74AC139-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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FDS5351 FDS5351 ONSEMI FDS5351.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Gate charge: 27nC
On-state resistance: 58.8mΩ
Power dissipation: 5W
Drain current: 6.1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
8+60.00 грн
10+43.08 грн
25+38.17 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
1N5938BRLG ONSEMI 1N59xxB.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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FDD306P FDD306P ONSEMI FDD306P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
на замовлення 352 шт:
термін постачання 21-30 дні (днів)
7+68.96 грн
10+53.14 грн
50+42.75 грн
100+38.75 грн
250+38.34 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FAN54120MP420X ONSEMI FAN54120-D.PDF Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC
Operating temperature: -30...85°C
Output current: 0.5A
Supply voltage: 4...6V DC
Rechargeable battery voltage: 4.2V
Mounting: SMD
Kind of integrated circuit: battery charging controller
Case: DFN6
Type of integrated circuit: PMIC
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Interface: USB
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RFD3055LESM9A RFD3055LESM9A ONSEMI RFD3055LESM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2477 шт:
термін постачання 21-30 дні (днів)
13+34.93 грн
16+26.03 грн
25+25.95 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
RFD12N06RLESM9A RFD12N06RLESM9A ONSEMI RFD12N06RLESM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
на замовлення 1438 шт:
термін постачання 21-30 дні (днів)
6+77.02 грн
10+56.63 грн
50+44.24 грн
100+41.58 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FDMC8360LET40 ONSEMI fdmc8360let40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 658A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86570LET60 ONSEMI fdmc86570let60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMD8240LET40 ONSEMI fdmd8240let40-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 489A
Power dissipation: 50W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMD8260LET60 ONSEMI ONSM-S-A0003591008-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 304A
Power dissipation: 44W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSV340AF ONSEMI fsv340af-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA flat
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BD243C BD243C ONSEMI BD243-FAI-DTE.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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TIP112G TIP112G ONSEMI TIP112G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
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BAT54S ONSEMI bat54x-f.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
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NDS9952A NDS9952A ONSEMI nds9952a-d.pdf FAIRS16211-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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SMUN5235DW1T1G SMUN5235DW1T1G ONSEMI dtc123jd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 5980 шт:
термін постачання 21-30 дні (днів)
30+15.22 грн
43+9.73 грн
60+6.97 грн
100+6.02 грн
500+4.42 грн
1000+3.91 грн
3000+3.29 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
SMUN5231DW1T1G SMUN5231DW1T1G ONSEMI dtc123ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
56+8.06 грн
500+5.56 грн
3000+3.27 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
SMUN5335DW1T1G SMUN5335DW1T1G ONSEMI dtc123jp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
на замовлення 4090 шт:
термін постачання 21-30 дні (днів)
35+13.08 грн
40+10.81 грн
100+9.56 грн
500+8.65 грн
3000+8.32 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
FDBL0065N40 ONSEMI fdbl0065n40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
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HUF76629D3ST huf76629d3s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 52mΩ
Gate-source voltage: ±16V
Drain current: 20A
Drain-source voltage: 100V
Power dissipation: 150W
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FDT86106LZ fdt86106lz-d.pdf
FDT86106LZ
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 189mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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MMBTA56WT1G mmbta56wt1-d.pdf
MMBTA56WT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.85 грн
50+8.32 грн
100+5.45 грн
500+3.12 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
SMMBTA56LT1G mmbta55lt1-d.pdf
SMMBTA56LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 418 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+23.29 грн
26+16.47 грн
33+12.84 грн
50+10.33 грн
100+8.25 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMMBTA56LT3G mmbta55lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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SMMBTA56WT1G mmbta56wt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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SMMBTA56WT3G mmbta56wt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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MMBTA56 MMBTA56-DTE.pdf
MMBTA56
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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P6KE10A P6KE10A-FAI-DTE.pdf
P6KE10A
Виробник: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 9.5V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
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ESD7381MUT5G esd7381-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; X3DFN2; reel,tape
Semiconductor structure: unidirectional
Case: X3DFN2
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Kind of package: reel; tape
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MBR0530 MBR0530.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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SBC846ALT1G BC846ALT1G.PDF
SBC846ALT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NZT660 nzt660a-d.pdf FAIR-S-A0000083804-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
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NZT660A nzt660a-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
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NTTFS6H880NLTAG nttfs6h880nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 83A; 17W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 83A
Power dissipation: 17W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS6H880NLWFTAG nvtfs6h880nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 83A; 17W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Pulsed drain current: 83A
Power dissipation: 17W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS6H880NTAG nvtfs6h880n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS6H880NWFTAG nvtfs6h880n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 16W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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MBR130T3G mbr130t1-d.pdf
MBR130T3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Case: SOD123
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GBU4A GBU4x.PDF
GBU4A
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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MMUN2115LT1G MMUN2115.PDF
MMUN2115LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
на замовлення 3026 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.85 грн
72+5.82 грн
116+3.61 грн
200+3.01 грн
500+2.25 грн
1000+1.70 грн
3000+1.31 грн
Мінімальне замовлення: 46
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1N5368BG description 1N53xx.PDF
1N5368BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 842 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.97 грн
21+20.29 грн
23+18.30 грн
50+13.89 грн
100+12.81 грн
Мінімальне замовлення: 18
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FCP850N80Z fcp850n80z-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 18A; 136W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 18A
Power dissipation: 136W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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FCD850N80Z fcu850n80z-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCPF650N80Z fcpf650n80z-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 24A; 30.5W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 24A
Power dissipation: 30.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
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FCD2250N80Z fcd2250n80z-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 6.5A; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 6.5A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.25Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCPF850N80Z fcpf850n80z-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 18A; 28.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 18A
Power dissipation: 28.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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NTPF450N80S3Z ntpf450n80s3z-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 25A; 29.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 25A
Power dissipation: 29.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 19.3nC
Kind of package: tube
Kind of channel: enhancement
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FCPF2250N80Z FAIR-S-A0002365705-1.pdf?t.download=true&u=5oefqw fcpf2250n80z-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.5A; Idm: 6.5A; 21.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.5A
Pulsed drain current: 6.5A
Power dissipation: 21.9W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.25Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
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NGTB35N65FL2WG ngtb35n65fl2w-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector-emitter voltage: 650V
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
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GBU8M GBU8x.PDF
GBU8M
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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DTA124XET1G dta124x-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...130
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
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BZX84C33LT1G BZX84B_BZX84C.PDF
BZX84C33LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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SZBZX84C33LT1G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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BZX84C33LT3G bzx84c2v4lt1-d.pdf
BZX84C33LT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 9900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.16 грн
105+3.99 грн
208+2.00 грн
500+1.67 грн
1000+1.40 грн
5000+1.34 грн
Мінімальне замовлення: 63
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SZBZX84C33ET1G BZX84CxxET1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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74ACT139MTC 74ACT139-D.PDF FAIRS01311-1.pdf?t.download=true&u=5oefqw
74ACT139MTC
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Quiescent current: 40µA
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74ACT139MTCX 74ACT139-D.PDF
74ACT139MTCX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP16; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
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74ACT139SCX 74ACT139-D.PDF 74act139-d.pdf
74ACT139SCX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SO16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: SO16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
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MC74ACT139DR2G MC74AC139-D.pdf
MC74ACT139DR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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MC74ACT139DTR2G MC74AC139-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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FDS5351 FDS5351.pdf
FDS5351
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Gate charge: 27nC
On-state resistance: 58.8mΩ
Power dissipation: 5W
Drain current: 6.1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+60.00 грн
10+43.08 грн
25+38.17 грн
Мінімальне замовлення: 8
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1N5938BRLG 1N59xxB.pdf
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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FDD306P FDD306P.pdf
FDD306P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
на замовлення 352 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+68.96 грн
10+53.14 грн
50+42.75 грн
100+38.75 грн
250+38.34 грн
Мінімальне замовлення: 7
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FAN54120MP420X FAN54120-D.PDF
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC
Operating temperature: -30...85°C
Output current: 0.5A
Supply voltage: 4...6V DC
Rechargeable battery voltage: 4.2V
Mounting: SMD
Kind of integrated circuit: battery charging controller
Case: DFN6
Type of integrated circuit: PMIC
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Interface: USB
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RFD3055LESM9A RFD3055LESM.pdf
RFD3055LESM9A
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2477 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.93 грн
16+26.03 грн
25+25.95 грн
Мінімальне замовлення: 13
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RFD12N06RLESM9A RFD12N06RLESM.pdf
RFD12N06RLESM9A
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
на замовлення 1438 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+77.02 грн
10+56.63 грн
50+44.24 грн
100+41.58 грн
Мінімальне замовлення: 6
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FDMC8360LET40 fdmc8360let40-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 658A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86570LET60 fdmc86570let60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMD8240LET40 fdmd8240let40-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 489A
Power dissipation: 50W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMD8260LET60 ONSM-S-A0003591008-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 304A
Power dissipation: 44W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSV340AF fsv340af-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA flat
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BD243C BD243-FAI-DTE.pdf
BD243C
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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TIP112G TIP112G.PDF
TIP112G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
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BAT54S bat54x-f.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
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NDS9952A nds9952a-d.pdf FAIRS16211-1.pdf?t.download=true&u=5oefqw
NDS9952A
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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SMUN5235DW1T1G dtc123jd-d.pdf
SMUN5235DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 5980 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+15.22 грн
43+9.73 грн
60+6.97 грн
100+6.02 грн
500+4.42 грн
1000+3.91 грн
3000+3.29 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
SMUN5231DW1T1G dtc123ed-d.pdf
SMUN5231DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+8.06 грн
500+5.56 грн
3000+3.27 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
SMUN5335DW1T1G dtc123jp-d.pdf
SMUN5335DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
на замовлення 4090 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+13.08 грн
40+10.81 грн
100+9.56 грн
500+8.65 грн
3000+8.32 грн
Мінімальне замовлення: 35
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FDBL0065N40 fdbl0065n40-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
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