| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MPSW13RLRA | onsemi |
Description: TRANS NPN DARL 30V 1A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW13RLRAG | onsemi |
Description: TRANS NPN DARL 30V 1A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW42 | onsemi |
Description: TRANS NPN 300V 0.5A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW42G | onsemi |
Description: TRANS NPN 300V 0.5A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW45ARLRAG | onsemi |
Description: TRANS NPN DARL 50V 1A TO92Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW45AZL1 | onsemi |
Description: TRANS NPN DARL 50V 1A TO92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW45AZL1G | onsemi |
Description: TRANS NPN DARL 50V 1A TO92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW45RLRE | onsemi |
Description: TRANS NPN DARL 40V 1A TO92Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW45RLREG | onsemi |
Description: TRANS NPN DARL 40V 1A TO92Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW51ARLRA | onsemi |
Description: TRANS PNP 40V 1A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW51ARLRAG | onsemi |
Description: TRANS PNP 40V 1A TO92Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Reel (TR) Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW51ARLRP | onsemi |
Description: TRANS PNP 40V 1A TO92DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Box (TB) Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW51ARLRPG | onsemi |
Description: TRANS PNP 40V 1A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW51G | onsemi |
Description: TRANS PNP 30V 1A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MPSW55 | onsemi |
Description: TRANS PNP 60V 0.5A TO92 Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||
|
MPSW55G | onsemi |
Description: TRANS PNP 60V 0.5A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW55RLRA | onsemi |
Description: TRANS PNP 60V 0.5A TO92 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW55RLRAG | onsemi |
Description: TRANS PNP 60V 0.5A TO92Packaging: Tape & Reel (TR) Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW56RLRA | onsemi |
Description: TRANS PNP 80V 0.5A TO92Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW56RLRAG | onsemi |
Description: TRANS PNP 80V 0.5A TO92Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW56RLRPG | onsemi |
Description: TRANS PNP 80V 0.5A TO92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW63RLRA | onsemi |
Description: TRANS PNP DARL 30V 0.5A TO92Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Reel (TR) Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW63RLRAG | onsemi |
Description: TRANS PNP DARL 30V 0.5A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MPSW92RLRA | onsemi |
Description: TRANS PNP 300V 0.5A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Current - Collector Cutoff (Max): 250nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
MPSW92RLRAG | onsemi |
Description: TRANS PNP 300V 0.5A TO92Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Current - Collector Cutoff (Max): 250nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MR2520L | onsemi |
Description: TVS DIODE 23VWM MICRODE BUTTONPower Line Protection: No Power - Peak Pulse: 2500W (2.5kW) Voltage - Breakdown (Min): 24V Unidirectional Channels: 1 Supplier Device Package: Microde Button Voltage - Reverse Standoff (Typ): 23V (Max) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: Button, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
MR2520LG | onsemi |
Description: TVS DIODE 23VWM MICRODE BUTTON Power Line Protection: No Power - Peak Pulse: 2500W (2.5kW) Voltage - Breakdown (Min): 24V Unidirectional Channels: 1 Supplier Device Package: Microde Button Voltage - Reverse Standoff (Typ): 23V (Max) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: Button, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
|
MR2520LRL | onsemi |
Description: TVS DIODE 23VWM MICRODE BUTTON Power Line Protection: No Power - Peak Pulse: 2500W (2.5kW) Voltage - Breakdown (Min): 24V Unidirectional Channels: 1 Supplier Device Package: Microde Button Voltage - Reverse Standoff (Typ): 23V (Max) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: Button, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
|
MR2520LRLG | onsemi |
Description: TVS DIODE 23VWM MICRODE BUTTON Power Line Protection: No Power - Peak Pulse: 2500W (2.5kW) Voltage - Breakdown (Min): 24V Unidirectional Channels: 1 Supplier Device Package: Microde Button Voltage - Reverse Standoff (Typ): 23V (Max) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: Button, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
|
MR2520LRLX | onsemi |
Description: TVS DIODE 23VWM MICRODE BUTTON Power Line Protection: No Power - Peak Pulse: 2500W (2.5kW) Voltage - Breakdown (Min): 24V Unidirectional Channels: 1 Supplier Device Package: Microde Button Voltage - Reverse Standoff (Typ): 23V (Max) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: Button, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MR2520LRLXG | onsemi |
Description: TVS DIODE 23VWM MICRODE BUTTON Power Line Protection: No Power - Peak Pulse: 2500W (2.5kW) Voltage - Breakdown (Min): 24V Unidirectional Channels: 1 Supplier Device Package: Microde Button Voltage - Reverse Standoff (Typ): 23V (Max) Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: Button, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MR2520LX | onsemi |
Description: TVS DIODE 23VWM MICRODE BUTTON Packaging: Bulk Package / Case: Button, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: Microde Button Unidirectional Channels: 1 Voltage - Breakdown (Min): 24V Power - Peak Pulse: 2500W (2.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MR2520LXG | onsemi |
Description: TVS DIODE 23VWM MICRODE BUTTON Packaging: Bulk Package / Case: Button, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: Microde Button Unidirectional Channels: 1 Voltage - Breakdown (Min): 24V Power - Peak Pulse: 2500W (2.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MR2535L | onsemi |
Description: TVS DIODE 20VWM MICRODE BUTTONPackaging: Bulk Package / Case: Button, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: Microde Button Unidirectional Channels: 1 Voltage - Breakdown (Min): 24V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MR2535LG | onsemi |
Description: TVS DIODE 20VWM MICRODE BUTTON Packaging: Bulk Package / Case: Button, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: Microde Button Unidirectional Channels: 1 Voltage - Breakdown (Min): 24V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MR750G | onsemi |
Description: DIODE STD 50V 6A MICRODE BUTTONPackaging: Bulk Package / Case: Button, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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MR751G | onsemi |
Description: DIODE STD 100V 6A MICRODE BUTTONCurrent - Reverse Leakage @ Vr: 25 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: Microde Button Current - Average Rectified (Io): 6A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: Button, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
|
MR752 | onsemi |
Description: DIODE GP 200V 6A MICRODE BUTTONCurrent - Reverse Leakage @ Vr: 25 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: Microde Button Current - Average Rectified (Io): 6A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: Button, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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MR752G | onsemi |
Description: DIODE GP 200V 6A MICRODE BUTTONCurrent - Reverse Leakage @ Vr: 25 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: Microde Button Current - Average Rectified (Io): 6A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: Button, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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MR850 | onsemi |
Description: DIODE GEN PURP 50V 3A AXIALCurrent - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MR851 | onsemi |
Description: DIODE GEN PURP 100V 3A AXIALCurrent - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MR851RL | onsemi |
Description: DIODE GEN PURP 100V 3A AXIALOperating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MR851RLG | onsemi |
Description: DIODE GEN PURP 100V 3A AXIALSupplier Device Package: Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MR852 | onsemi |
Description: DIODE GEN PURP 200V 3A AXIALVoltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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MR852G | onsemi |
Description: DIODE GEN PURP 200V 3A AXIALCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MR856 | onsemi |
Description: DIODE STANDARD 600V 3A AXIALCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MRA4005T1G | onsemi |
Description: DIODE STANDARD 600V 1A SMACurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMA Current - Average Rectified (Io): 1A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
на замовлення 145500 шт: термін постачання 21-31 дні (днів) |
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MSB1218A-RT1 | onsemi |
Description: TRANS PNP 45V 0.1A SC70-3Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70-3 (SOT323) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MSB92AWT1G | onsemi |
Description: TRANS PNP 300V 0.5A SC70-3Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SC-70-3 (SOT323) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V Current - Collector Cutoff (Max): 250nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MSB92T1 | onsemi |
Description: TRANS PNP 300V 0.15A SC-59 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: SC-59 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Current - Collector Cutoff (Max): 250nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 18000 шт В кошику од. на суму грн. | ||||||||||
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MSB92T1G | onsemi |
Description: TRANS PNP 300V 0.15A SC-59Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: SC-59 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Current - Collector Cutoff (Max): 250nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
MSC2295-BT1G | onsemi |
Description: RF TRANS NPN 20V 150MHZ SC59Supplier Device Package: SC-59 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 30mA Power - Max: 200mW Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MSC2712YT1G | onsemi |
Description: TRANS NPN 50V 0.1A SC-59Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-59 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MSD2714AT1G | onsemi |
Description: RF TRANS NPN 25V 650MHZ SC59Supplier Device Package: SC-59 Frequency - Transition: 650MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Voltage - Collector Emitter Breakdown (Max): 25V Power - Max: 225mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MSD42T1G | onsemi |
Description: TRANS NPN 300V 0.15A SC59Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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MSD42WT1G | onsemi |
Description: TRANS NPN 300V 0.15A SC70-3Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: SC-70-3 (SOT323) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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MSD6100RLRA | onsemi |
Description: DIODE ARRAY GP 100V 200MA TO92Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 135°C Supplier Device Package: TO-92 (TO-226) Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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MSD6100RLRAG | onsemi |
Description: DIODE ARRAY GP 100V 200MA TO92Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: TO-92 (TO-226) Operating Temperature - Junction: -55°C ~ 135°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
|
MSRD620CT | onsemi |
Description: DIODE ARRAY GP 200V 3A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
MTB50P03HDLG | onsemi |
Description: MOSFET P-CH 30V 50A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MPSW13RLRA |
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Виробник: onsemi
Description: TRANS NPN DARL 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Description: TRANS NPN DARL 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW13RLRAG |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
Description: TRANS NPN DARL 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| MPSW42 |
![]() |
Виробник: onsemi
Description: TRANS NPN 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS NPN 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MPSW42G |
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Виробник: onsemi
Description: TRANS NPN 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS NPN 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MPSW45ARLRAG |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| MPSW45AZL1 |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW45AZL1G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| MPSW45RLRE |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS NPN DARL 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW45RLREG |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS NPN DARL 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW51ARLRA |
![]() |
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW51ARLRAG |
![]() |
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Description: TRANS PNP 40V 1A TO92
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| MPSW51ARLRP |
![]() |
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
Description: TRANS PNP 40V 1A TO92
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW51ARLRPG |
![]() |
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
од. на суму грн.
| MPSW51G |
![]() |
Виробник: onsemi
Description: TRANS PNP 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 30V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MPSW55 |
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Description: TRANS PNP 60V 0.5A TO92
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MPSW55G |
![]() |
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MPSW55RLRA |
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
Description: TRANS PNP 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| MPSW55RLRAG |
![]() |
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Description: TRANS PNP 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW56RLRA |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW56RLRAG |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| MPSW56RLRPG |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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| MPSW63RLRA |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS PNP DARL 30V 0.5A TO92
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW63RLRAG |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
Description: TRANS PNP DARL 30V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
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| MPSW92RLRA |
![]() |
Виробник: onsemi
Description: TRANS PNP 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Description: TRANS PNP 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| MPSW92RLRAG |
![]() |
Виробник: onsemi
Description: TRANS PNP 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Description: TRANS PNP 300V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| MR2520L |
![]() |
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MR2520LG |
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MR2520LRL |
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MR2520LRLG |
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MR2520LRLX |
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| MR2520LRLXG |
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 23VWM MICRODE BUTTON
Power Line Protection: No
Power - Peak Pulse: 2500W (2.5kW)
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: Microde Button
Voltage - Reverse Standoff (Typ): 23V (Max)
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| MR2520LX |
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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В кошику
од. на суму грн.
| MR2520LXG |
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| MR2535L | ![]() |
Виробник: onsemi
Description: TVS DIODE 20VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
Description: TVS DIODE 20VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| MR2535LG |
Виробник: onsemi
Description: TVS DIODE 20VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
Description: TVS DIODE 20VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| MR750G |
![]() |
Виробник: onsemi
Description: DIODE STD 50V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE STD 50V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MR751G |
![]() |
Виробник: onsemi
Description: DIODE STD 100V 6A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
Description: DIODE STD 100V 6A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MR752 |
![]() |
Виробник: onsemi
Description: DIODE GP 200V 6A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
Description: DIODE GP 200V 6A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MR752G |
![]() |
Виробник: onsemi
Description: DIODE GP 200V 6A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
Description: DIODE GP 200V 6A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MR850 |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 50V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Description: DIODE GEN PURP 50V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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од. на суму грн.
| MR851 |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 100V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Description: DIODE GEN PURP 100V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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В кошику
од. на суму грн.
| MR851RL |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 100V 3A AXIAL
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Description: DIODE GEN PURP 100V 3A AXIAL
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
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| MR851RLG |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 100V 3A AXIAL
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 125°C
Description: DIODE GEN PURP 100V 3A AXIAL
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 125°C
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| MR852 |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 3A AXIAL
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Description: DIODE GEN PURP 200V 3A AXIAL
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
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| MR852G |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 200V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Description: DIODE GEN PURP 200V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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| MR856 |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 600V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Description: DIODE STANDARD 600V 3A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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| MRA4005T1G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 600V 1A SMA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 600V 1A SMA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 145500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 3.39 грн |
| 3000+ | 3.11 грн |
| MSB1218A-RT1 |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PNP 45V 0.1A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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| MSB92AWT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 300V 0.5A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70-3 (SOT323)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PNP 300V 0.5A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70-3 (SOT323)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.30 грн |
| MSB92T1 |
Виробник: onsemi
Description: TRANS PNP 300V 0.15A SC-59
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SC-59
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 300V 0.15A SC-59
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SC-59
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 18000 шт
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| MSB92T1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 300V 0.15A SC-59
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SC-59
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 300V 0.15A SC-59
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SC-59
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| MSC2295-BT1G |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 20V 150MHZ SC59
Supplier Device Package: SC-59
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 30mA
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 20V 150MHZ SC59
Supplier Device Package: SC-59
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 30mA
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| MSC2712YT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 0.1A SC-59
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 50V 0.1A SC-59
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| MSD2714AT1G |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 25V 650MHZ SC59
Supplier Device Package: SC-59
Frequency - Transition: 650MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 25V
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 25V 650MHZ SC59
Supplier Device Package: SC-59
Frequency - Transition: 650MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 25V
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| MSD42T1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 300V 0.15A SC59
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Description: TRANS NPN 300V 0.15A SC59
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.44 грн |
| 6000+ | 4.73 грн |
| 9000+ | 4.47 грн |
| 15000+ | 3.92 грн |
| 21000+ | 3.76 грн |
| MSD42WT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 300V 0.15A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS NPN 300V 0.15A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MSD6100RLRA |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 100V 200MA TO92
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 135°C
Supplier Device Package: TO-92 (TO-226)
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 100V 200MA TO92
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 135°C
Supplier Device Package: TO-92 (TO-226)
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MSD6100RLRAG |
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Виробник: onsemi
Description: DIODE ARRAY GP 100V 200MA TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: TO-92 (TO-226)
Operating Temperature - Junction: -55°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE ARRAY GP 100V 200MA TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: TO-92 (TO-226)
Operating Temperature - Junction: -55°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MSRD620CT |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Description: DIODE ARRAY GP 200V 3A DPAK
товару немає в наявності
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од. на суму грн.
| MTB50P03HDLG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Description: MOSFET P-CH 30V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.






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