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MPSW01ARLRPG MPSW01ARLRPG onsemi mpsw01-d.pdf Description: TRANS NPN 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW06G MPSW06G onsemi mpsw05-d.pdf Description: TRANS NPN 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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MPSW13RLRA MPSW13RLRA onsemi mpsw13-d.pdf Description: TRANS NPN DARL 30V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW13RLRAG MPSW13RLRAG onsemi mpsw13-d.pdf Description: TRANS NPN DARL 30V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW42 MPSW42 onsemi mpsw42-d.pdf Description: TRANS NPN 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MPSW42G MPSW42G onsemi mpsw42-d.pdf Description: TRANS NPN 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MPSW45ARLRAG MPSW45ARLRAG onsemi mpsw45-d.pdf Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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MPSW45AZL1 MPSW45AZL1 onsemi mpsw45-d.pdf Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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MPSW45AZL1G MPSW45AZL1G onsemi mpsw45-d.pdf Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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MPSW45RLRE MPSW45RLRE onsemi mpsw45-d.pdf Description: TRANS NPN DARL 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW45RLREG MPSW45RLREG onsemi mpsw45-d.pdf Description: TRANS NPN DARL 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51ARLRA MPSW51ARLRA onsemi mpsw51-d.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51ARLRAG MPSW51ARLRAG onsemi mpsw51-d.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51ARLRP MPSW51ARLRP onsemi mpsw51-d.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51ARLRPG MPSW51ARLRPG onsemi mpsw51-d.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51G MPSW51G onsemi mpsw51-d.pdf Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW55 MPSW55 onsemi Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MPSW55G MPSW55G onsemi mpsw55-d.pdf Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MPSW55RLRA MPSW55RLRA onsemi Description: TRANS PNP 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MPSW55RLRAG MPSW55RLRAG onsemi mpsw55-d.pdf Description: TRANS PNP 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MPSW56RLRA MPSW56RLRA onsemi mpsw55-d.pdf Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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MPSW56RLRAG MPSW56RLRAG onsemi mpsw55-d.pdf Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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MPSW56RLRPG MPSW56RLRPG onsemi mpsw55-d.pdf Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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MPSW63RLRA MPSW63RLRA onsemi mpsw63-d.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW63RLRAG MPSW63RLRAG onsemi mpsw63-d.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW92RLRA MPSW92RLRA onsemi mpsw92-d.pdf Description: TRANS PNP 300V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MPSW92RLRAG MPSW92RLRAG onsemi mpsw92-d.pdf Description: TRANS PNP 300V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MR2520L MR2520L onsemi MR2520L-D.PDF Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LG MR2520LG onsemi Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LRL MR2520LRL onsemi Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LRLG MR2520LRLG onsemi Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LRLX MR2520LRLX onsemi Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LRLXG MR2520LRLXG onsemi Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LX MR2520LX onsemi Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LXG MR2520LXG onsemi Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2535L MR2535L onsemi description Description: TVS DIODE 20VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
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MR2535LG MR2535LG onsemi Description: TVS DIODE 20VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
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MR750G MR750G onsemi mr750-d.pdf Description: DIODE STD 50V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MR751G MR751G onsemi mr750-d.pdf Description: DIODE STD 100V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MR752 MR752 onsemi mr750-d.pdf Description: DIODE GP 200V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MR752G MR752G onsemi mr750-d.pdf Description: DIODE GP 200V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MR850 MR850 onsemi mr850-d.pdf Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MR851 MR851 onsemi mr850-d.pdf Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MR851RL MR851RL onsemi mr850-d.pdf Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MR851RLG MR851RLG onsemi mr850-d.pdf Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MR852 MR852 onsemi mr850-d.pdf Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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MR852G MR852G onsemi mr850-d.pdf Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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MR856 MR856 onsemi mr850-d.pdf Description: DIODE STANDARD 600V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MR856G MR856G onsemi mr850-d.pdf Description: DIODE STANDARD 600V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MRA4005T1G MRA4005T1G onsemi mra4003t3-d.pdf Description: DIODE STANDARD 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 145500 шт:
термін постачання 21-31 дні (днів)
1500+3.66 грн
3000+3.35 грн
Мінімальне замовлення: 1500
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MSB1218A-RT1 MSB1218A-RT1 onsemi msb1218a-rt1-d.pdf Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
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MSB92AWT1G MSB92AWT1G onsemi msb92wt1-d.pdf Description: TRANS PNP 300V 0.5A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.64 грн
Мінімальне замовлення: 3000
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MSB92T1 MSB92T1 onsemi Description: TRANS PNP 300V 0.15A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
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MSB92T1G MSB92T1G onsemi msb92t1g-d.pdf Description: TRANS PNP 300V 0.15A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
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MSC2295-BT1G MSC2295-BT1G onsemi msc2295-bt1-d.pdf Description: RF TRANS NPN 20V 150MHZ SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SC-59
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MSC2712YT1G MSC2712YT1G onsemi msc2712gt1-d.pdf Description: TRANS NPN 50V 0.1A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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MSD2714AT1G MSD2714AT1G onsemi msd2714at1-d.pdf Description: RF TRANS NPN 25V 650MHZ SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 650MHz
Supplier Device Package: SC-59
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MSD42T1G MSD42T1G onsemi msd42t1-d.pdf Description: TRANS NPN 300V 0.15A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+5.87 грн
6000+5.10 грн
9000+4.82 грн
15000+4.23 грн
21000+4.05 грн
Мінімальне замовлення: 3000
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MSD42WT1G MSD42WT1G onsemi msd42wt1-d.pdf Description: TRANS NPN 300V 0.15A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
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MSD6100RLRA MSD6100RLRA onsemi msd6100-d.pdf Description: DIODE ARRAY GP 100V 200MA TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: TO-92 (TO-226)
Operating Temperature - Junction: -55°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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MPSW01ARLRPG mpsw01-d.pdf
MPSW01ARLRPG
Виробник: onsemi
Description: TRANS NPN 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW06G mpsw05-d.pdf
MPSW06G
Виробник: onsemi
Description: TRANS NPN 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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MPSW13RLRA mpsw13-d.pdf
MPSW13RLRA
Виробник: onsemi
Description: TRANS NPN DARL 30V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW13RLRAG mpsw13-d.pdf
MPSW13RLRAG
Виробник: onsemi
Description: TRANS NPN DARL 30V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW42 mpsw42-d.pdf
MPSW42
Виробник: onsemi
Description: TRANS NPN 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MPSW42G mpsw42-d.pdf
MPSW42G
Виробник: onsemi
Description: TRANS NPN 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MPSW45ARLRAG mpsw45-d.pdf
MPSW45ARLRAG
Виробник: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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MPSW45AZL1 mpsw45-d.pdf
MPSW45AZL1
Виробник: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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MPSW45AZL1G mpsw45-d.pdf
MPSW45AZL1G
Виробник: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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MPSW45RLRE mpsw45-d.pdf
MPSW45RLRE
Виробник: onsemi
Description: TRANS NPN DARL 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW45RLREG mpsw45-d.pdf
MPSW45RLREG
Виробник: onsemi
Description: TRANS NPN DARL 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51ARLRA mpsw51-d.pdf
MPSW51ARLRA
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51ARLRAG mpsw51-d.pdf
MPSW51ARLRAG
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51ARLRP mpsw51-d.pdf
MPSW51ARLRP
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51ARLRPG mpsw51-d.pdf
MPSW51ARLRPG
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51G mpsw51-d.pdf
MPSW51G
Виробник: onsemi
Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW55
MPSW55
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MPSW55G mpsw55-d.pdf
MPSW55G
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MPSW55RLRA
MPSW55RLRA
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MPSW55RLRAG mpsw55-d.pdf
MPSW55RLRAG
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MPSW56RLRA mpsw55-d.pdf
MPSW56RLRA
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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MPSW56RLRAG mpsw55-d.pdf
MPSW56RLRAG
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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MPSW56RLRPG mpsw55-d.pdf
MPSW56RLRPG
Виробник: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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MPSW63RLRA mpsw63-d.pdf
MPSW63RLRA
Виробник: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW63RLRAG mpsw63-d.pdf
MPSW63RLRAG
Виробник: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW92RLRA mpsw92-d.pdf
MPSW92RLRA
Виробник: onsemi
Description: TRANS PNP 300V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MPSW92RLRAG mpsw92-d.pdf
MPSW92RLRAG
Виробник: onsemi
Description: TRANS PNP 300V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MR2520L MR2520L-D.PDF
MR2520L
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LG
MR2520LG
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LRL
MR2520LRL
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LRLG
MR2520LRLG
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LRLX
MR2520LRLX
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LRLXG
MR2520LRLXG
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LX
MR2520LX
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2520LXG
MR2520LXG
Виробник: onsemi
Description: TVS DIODE 23VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
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MR2535L description
MR2535L
Виробник: onsemi
Description: TVS DIODE 20VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
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MR2535LG
MR2535LG
Виробник: onsemi
Description: TVS DIODE 20VWM MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: Microde Button
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
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MR750G mr750-d.pdf
MR750G
Виробник: onsemi
Description: DIODE STD 50V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MR751G mr750-d.pdf
MR751G
Виробник: onsemi
Description: DIODE STD 100V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MR752 mr750-d.pdf
MR752
Виробник: onsemi
Description: DIODE GP 200V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MR752G mr750-d.pdf
MR752G
Виробник: onsemi
Description: DIODE GP 200V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MR850 mr850-d.pdf
MR850
Виробник: onsemi
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MR851 mr850-d.pdf
MR851
Виробник: onsemi
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MR851RL mr850-d.pdf
MR851RL
Виробник: onsemi
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MR851RLG mr850-d.pdf
MR851RLG
Виробник: onsemi
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MR852 mr850-d.pdf
MR852
Виробник: onsemi
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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MR852G mr850-d.pdf
MR852G
Виробник: onsemi
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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MR856 mr850-d.pdf
MR856
Виробник: onsemi
Description: DIODE STANDARD 600V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MR856G mr850-d.pdf
MR856G
Виробник: onsemi
Description: DIODE STANDARD 600V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MRA4005T1G mra4003t3-d.pdf
MRA4005T1G
Виробник: onsemi
Description: DIODE STANDARD 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 145500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+3.66 грн
3000+3.35 грн
Мінімальне замовлення: 1500
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MSB1218A-RT1 msb1218a-rt1-d.pdf
MSB1218A-RT1
Виробник: onsemi
Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
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MSB92AWT1G msb92wt1-d.pdf
MSB92AWT1G
Виробник: onsemi
Description: TRANS PNP 300V 0.5A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.64 грн
Мінімальне замовлення: 3000
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MSB92T1
MSB92T1
Виробник: onsemi
Description: TRANS PNP 300V 0.15A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
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MSB92T1G msb92t1g-d.pdf
MSB92T1G
Виробник: onsemi
Description: TRANS PNP 300V 0.15A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
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MSC2295-BT1G msc2295-bt1-d.pdf
MSC2295-BT1G
Виробник: onsemi
Description: RF TRANS NPN 20V 150MHZ SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: SC-59
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MSC2712YT1G msc2712gt1-d.pdf
MSC2712YT1G
Виробник: onsemi
Description: TRANS NPN 50V 0.1A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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MSD2714AT1G msd2714at1-d.pdf
MSD2714AT1G
Виробник: onsemi
Description: RF TRANS NPN 25V 650MHZ SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 650MHz
Supplier Device Package: SC-59
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MSD42T1G msd42t1-d.pdf
MSD42T1G
Виробник: onsemi
Description: TRANS NPN 300V 0.15A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.87 грн
6000+5.10 грн
9000+4.82 грн
15000+4.23 грн
21000+4.05 грн
Мінімальне замовлення: 3000
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MSD42WT1G msd42wt1-d.pdf
MSD42WT1G
Виробник: onsemi
Description: TRANS NPN 300V 0.15A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
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MSD6100RLRA msd6100-d.pdf
MSD6100RLRA
Виробник: onsemi
Description: DIODE ARRAY GP 100V 200MA TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: TO-92 (TO-226)
Operating Temperature - Junction: -55°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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