Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22307) > Сторінка 25 з 372
Фото | Назва | Виробник | Інформація |
Доступність |
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TSM3N100CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 1000V 2.5A TO252 |
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TSM3N100CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 1000V 2.5A TO252 |
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TSM3N80CH C5G | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 800V 3A TO251 |
на замовлення 3711 шт: термін постачання 21-31 дні (днів) |
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TSM3N80CI C0G | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 800V 3A ITO220AB |
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TSM3N80CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 800V 3A TO252 |
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TSM3N80CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 800V 3A TO252 |
на замовлення 2415 шт: термін постачання 21-31 дні (днів) |
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TSM3N80CZ C0G | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 800V 3A TO220 |
на замовлення 988 шт: термін постачання 21-31 дні (днів) |
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TSM3N90CH C5G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 900V 2.5A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V |
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TSM3N90CI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 900V 2.5A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V |
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TSM3N90CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 900V 2.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V |
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TSM3N90CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 900V 2.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V |
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TSM4424CS RVG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V |
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TSM4424CS RVG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 8A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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TSM4436CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 60V 8A 8SOP |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
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TSM4436CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 60V 8A 8SOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TSM4436CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 60V 8A 8SOP |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
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TSM4806CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 28A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V |
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TSM4806CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 28A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V |
на замовлення 4820 шт: термін постачання 21-31 дні (днів) |
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TSM480P06CH X0G | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 60V 20A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V |
на замовлення 9013 шт: термін постачання 21-31 дні (днів) |
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TSM480P06CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 60V 20A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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TSM4936DCS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 30V 5.9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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TSM4936DCS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 30V 5.9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 26835 шт: термін постачання 21-31 дні (днів) |
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TSM4N60ECH C5G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 86.2W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V |
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TSM4N60ECP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 86.2W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252, (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V |
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TSM4N60ECP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 86.2W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252, (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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TSM4N80CI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 800V 4A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V Power Dissipation (Max): 38.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V |
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TSM4N80CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 800V 4A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V Power Dissipation (Max): 38.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V |
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TSM4N90CI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 900V 4A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V Power Dissipation (Max): 38.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V |
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TSM500P02CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.7A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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TSM500P02CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.7A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V |
на замовлення 139659 шт: термін постачання 21-31 дні (днів) |
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TSM5NC50CF C0G | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 500V 5A ITO220S |
на замовлення 977 шт: термін постачання 21-31 дні (днів) |
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TSM60N06CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 60V 66A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V Power Dissipation (Max): 44.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V |
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TSM60N06CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 60V 66A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V Power Dissipation (Max): 44.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V |
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TSM60N600CH C5G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 8A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
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TSM60N600CI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 8A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
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TSM60N600CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 8A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V |
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TSM60N900CH C5G | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 600V 4.5A TO251 |
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TSM60N900CI C0G | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 600V 4.5A ITO220AB |
на замовлення 870 шт: термін постачання 21-31 дні (днів) |
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TSM60N900CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 600V 4.5A TO252 |
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TSM60N900CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 600V 4.5A TO252 |
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TSM60NB190CF C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 18A ITO220S Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V Power Dissipation (Max): 59.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220S Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V |
на замовлення 3524 шт: термін постачання 21-31 дні (днів) |
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TSM60NB1R4CH C5G | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 600V 3A TO251 |
на замовлення 21686 шт: термін постачання 21-31 дні (днів) |
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TSM60NB1R4CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 600V 3A TO252 |
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TSM60NB1R4CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 600V 3A TO252 |
на замовлення 2264 шт: термін постачання 21-31 дні (днів) |
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TSM60NB380CF C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 11A ITO220S Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220S Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V |
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TSM60NB600CF C0G | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 600V 8A ITO220S |
на замовлення 3582 шт: термін постачання 21-31 дні (днів) |
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TSM60NB900CH C5G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V Power Dissipation (Max): 36.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V |
на замовлення 13965 шт: термін постачання 21-31 дні (днів) |
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TSM60NB900CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V Power Dissipation (Max): 36.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V |
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TSM60NB900CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V Power Dissipation (Max): 36.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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TSM6502CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N/P-CH 60V 24A/18A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM6502CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N/P-CH 60V 24A/18A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) |
на замовлення 5140 шт: термін постачання 21-31 дні (днів) |
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TSM650N15CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 150V 24A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V |
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TSM650N15CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 150V 24A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V |
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TSM650P02CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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TSM650P02CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V |
на замовлення 70103 шт: термін постачання 21-31 дні (днів) |
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TSM650P03CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 30V 4.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TSM650P03CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 30V 4.1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V |
на замовлення 19214 шт: термін постачання 21-31 дні (днів) |
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TSM680P06CH X0G | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 60V 18A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V |
на замовлення 8552 шт: термін постачання 21-31 дні (днів) |
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TSM680P06CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 60V 18A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TSM680P06CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 60V 18A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V |
на замовлення 23861 шт: термін постачання 21-31 дні (днів) |
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TSM3N100CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 1000V 2.5A TO252
Description: MOSFET N-CH 1000V 2.5A TO252
товар відсутній
TSM3N100CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 1000V 2.5A TO252
Description: MOSFET N-CH 1000V 2.5A TO252
товар відсутній
TSM3N80CH C5G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 3A TO251
Description: MOSFET N-CHANNEL 800V 3A TO251
на замовлення 3711 шт:
термін постачання 21-31 дні (днів)TSM3N80CI C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 3A ITO220AB
Description: MOSFET N-CH 800V 3A ITO220AB
товар відсутній
TSM3N80CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 3A TO252
Description: MOSFET N-CHANNEL 800V 3A TO252
товар відсутній
TSM3N80CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 3A TO252
Description: MOSFET N-CHANNEL 800V 3A TO252
на замовлення 2415 шт:
термін постачання 21-31 дні (днів)TSM3N80CZ C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 3A TO220
Description: MOSFET N-CHANNEL 800V 3A TO220
на замовлення 988 шт:
термін постачання 21-31 дні (днів)TSM3N90CH C5G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
Description: MOSFET N-CH 900V 2.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM3N90CI C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
Description: MOSFET N-CH 900V 2.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM3N90CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
Description: MOSFET N-CH 900V 2.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM3N90CZ C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
Description: MOSFET N-CH 900V 2.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM4424CS RVG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
товар відсутній
TSM4424CS RVG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.24 грн |
10+ | 32.84 грн |
TSM4436CS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 8A 8SOP
Description: MOSFET N-CHANNEL 60V 8A 8SOP
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)TSM4436CS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 8A 8SOP
Description: MOSFET N-CHANNEL 60V 8A 8SOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)TSM4436CS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 8A 8SOP
Description: MOSFET N-CHANNEL 60V 8A 8SOP
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)TSM4806CS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
товар відсутній
TSM4806CS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
на замовлення 4820 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.96 грн |
10+ | 28.58 грн |
100+ | 19.89 грн |
500+ | 14.58 грн |
1000+ | 11.85 грн |
TSM480P06CH X0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 20A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
Description: MOSFET P-CHANNEL 60V 20A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
на замовлення 9013 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.23 грн |
10+ | 45.35 грн |
100+ | 31.37 грн |
500+ | 24.6 грн |
1000+ | 20.93 грн |
2000+ | 18.64 грн |
5000+ | 17.37 грн |
TSM480P06CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
Description: MOSFET P-CHANNEL 60V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 19.17 грн |
5000+ | 17.49 грн |
12500+ | 16.2 грн |
TSM4936DCS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 21.01 грн |
5000+ | 19.17 грн |
12500+ | 17.75 грн |
25000+ | 16.49 грн |
TSM4936DCS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 26835 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 55.65 грн |
10+ | 46.1 грн |
100+ | 31.95 грн |
500+ | 25.05 грн |
1000+ | 21.32 грн |
TSM4N60ECH C5G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
товар відсутній
TSM4N60ECP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
товар відсутній
TSM4N60ECP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.49 грн |
TSM4N80CI C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
Description: MOSFET N-CH 800V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
TSM4N80CZ C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
Description: MOSFET N-CHANNEL 800V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
TSM4N90CI C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
Description: MOSFET N-CH 900V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
TSM500P02CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.89 грн |
6000+ | 8.2 грн |
9000+ | 7.38 грн |
30000+ | 6.82 грн |
75000+ | 6.41 грн |
TSM500P02CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 139659 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.82 грн |
12+ | 24.6 грн |
100+ | 14.77 грн |
500+ | 12.83 грн |
1000+ | 8.72 грн |
TSM5NC50CF C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 5A ITO220S
Description: MOSFET N-CH 500V 5A ITO220S
на замовлення 977 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 181.95 грн |
10+ | 156.93 грн |
100+ | 126.14 грн |
500+ | 97.26 грн |
TSM60N06CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 66A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 66A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
товар відсутній
TSM60N06CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 66A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 66A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
товар відсутній
TSM60N600CH C5G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 8A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CHANNEL 600V 8A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товар відсутній
TSM60N600CI C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 600V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товар відсутній
TSM60N600CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
товар відсутній
TSM60N900CH C5G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A TO251
Description: MOSFET N-CH 600V 4.5A TO251
товар відсутній
TSM60N900CI C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A ITO220AB
Description: MOSFET N-CH 600V 4.5A ITO220AB
на замовлення 870 шт:
термін постачання 21-31 дні (днів)TSM60N900CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A TO252
Description: MOSFET N-CH 600V 4.5A TO252
товар відсутній
TSM60N900CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A TO252
Description: MOSFET N-CH 600V 4.5A TO252
товар відсутній
TSM60NB190CF C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V
Description: MOSFET N-CH 600V 18A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V
на замовлення 3524 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 265.43 грн |
10+ | 214.44 грн |
100+ | 173.44 грн |
500+ | 144.68 грн |
1000+ | 123.89 грн |
2000+ | 116.65 грн |
TSM60NB1R4CH C5G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 3A TO251
Description: MOSFET N-CHANNEL 600V 3A TO251
на замовлення 21686 шт:
термін постачання 21-31 дні (днів)TSM60NB1R4CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 3A TO252
Description: MOSFET N-CHANNEL 600V 3A TO252
товар відсутній
TSM60NB1R4CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 3A TO252
Description: MOSFET N-CHANNEL 600V 3A TO252
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)TSM60NB380CF C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 11A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
Description: MOSFET N-CH 600V 11A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
товар відсутній
TSM60NB600CF C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 8A ITO220S
Description: MOSFET N-CH 600V 8A ITO220S
на замовлення 3582 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 261.86 грн |
10+ | 226.12 грн |
100+ | 185.28 грн |
500+ | 148.02 грн |
1000+ | 124.84 грн |
2000+ | 121.6 грн |
TSM60NB900CH C5G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
на замовлення 13965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 193.36 грн |
10+ | 167.31 грн |
100+ | 134.48 грн |
500+ | 103.69 грн |
1000+ | 85.92 грн |
2000+ | 79.99 грн |
5000+ | 75.77 грн |
TSM60NB900CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
товар відсутній
TSM60NB900CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 105.6 грн |
10+ | 83 грн |
100+ | 64.52 грн |
500+ | 51.33 грн |
1000+ | 41.81 грн |
TSM6502CR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 27.34 грн |
5000+ | 25.07 грн |
TSM6502CR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
на замовлення 5140 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.64 грн |
10+ | 52.08 грн |
100+ | 40.5 грн |
500+ | 32.22 грн |
1000+ | 26.25 грн |
TSM650N15CR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 24A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Description: MOSFET N-CH 150V 24A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
товар відсутній
TSM650N15CR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 24A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Description: MOSFET N-CH 150V 24A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
товар відсутній
TSM650P02CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.87 грн |
6000+ | 6.34 грн |
9000+ | 5.7 грн |
30000+ | 5.27 грн |
TSM650P02CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
на замовлення 70103 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.69 грн |
15+ | 19.03 грн |
100+ | 11.41 грн |
500+ | 9.91 грн |
1000+ | 6.74 грн |
TSM650P03CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.79 грн |
6000+ | 7.19 грн |
9000+ | 6.47 грн |
TSM650P03CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
на замовлення 19214 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.54 грн |
13+ | 21.57 грн |
100+ | 12.94 грн |
500+ | 11.25 грн |
1000+ | 7.65 грн |
TSM680P06CH X0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 18A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
Description: MOSFET P-CHANNEL 60V 18A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 8552 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.37 грн |
75+ | 41.12 грн |
150+ | 29.85 грн |
525+ | 23.4 грн |
1050+ | 19.92 грн |
2025+ | 17.74 грн |
5025+ | 16.53 грн |
TSM680P06CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 18.3 грн |
5000+ | 16.7 грн |
12500+ | 15.46 грн |
TSM680P06CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 23861 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 47.81 грн |
10+ | 40.19 грн |
100+ | 27.83 грн |
500+ | 21.82 грн |
1000+ | 18.57 грн |