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TSM055N03PQ56 RLG TSM055N03PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
товар відсутній
TSM055N03PQ56 RLG TSM055N03PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
6+49.18 грн
10+ 40.9 грн
100+ 28.31 грн
Мінімальне замовлення: 6
TSM05N03CW RPG TSM05N03CW RPG Taiwan Semiconductor Corporation pdf.php?pn=TSM05N03CW Description: MOSFET N-CHANNEL 30V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+16.22 грн
5000+ 14.79 грн
12500+ 13.7 грн
Мінімальне замовлення: 2500
TSM05N03CW RPG TSM05N03CW RPG Taiwan Semiconductor Corporation pdf.php?pn=TSM05N03CW Description: MOSFET N-CHANNEL 30V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
на замовлення 22115 шт:
термін постачання 21-31 дні (днів)
7+42.76 грн
10+ 35.62 грн
100+ 24.66 грн
500+ 19.33 грн
1000+ 16.45 грн
Мінімальне замовлення: 7
TSM060N03CP ROG TSM060N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+20.5 грн
5000+ 18.7 грн
Мінімальне замовлення: 2500
TSM060N03CP ROG TSM060N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 8244 шт:
термін постачання 21-31 дні (днів)
6+54.17 грн
10+ 45.02 грн
100+ 31.17 грн
500+ 24.44 грн
1000+ 20.8 грн
Мінімальне замовлення: 6
TSM060N03ECP ROG TSM060N03ECP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
товар відсутній
TSM060N03ECP ROG TSM060N03ECP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
на замовлення 1587 шт:
термін постачання 21-31 дні (днів)
6+54.17 грн
10+ 45.02 грн
100+ 31.17 грн
500+ 24.44 грн
1000+ 20.8 грн
Мінімальне замовлення: 6
TSM060N03PQ33 RGG TSM060N03PQ33 RGG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 62A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+13.85 грн
Мінімальне замовлення: 5000
TSM060N03PQ33 RGG TSM060N03PQ33 RGG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 62A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V
на замовлення 12065 шт:
термін постачання 21-31 дні (днів)
7+43.47 грн
10+ 35.62 грн
100+ 24.76 грн
500+ 18.14 грн
1000+ 14.75 грн
2000+ 13.18 грн
Мінімальне замовлення: 7
TSM061NA03CR RLG TSM061NA03CR RLG Taiwan Semiconductor Corporation TSM061NA03CR_B1610.pdf Description: MOSFET N-CH 30V 88A 8PDFN
товар відсутній
TSM061NA03CR RLG TSM061NA03CR RLG Taiwan Semiconductor Corporation TSM061NA03CR_B1610.pdf Description: MOSFET N-CH 30V 88A 8PDFN
товар відсутній
TSM061NA03CV RGG TSM061NA03CV RGG Taiwan Semiconductor Corporation TSM061NA03CV_B1610.pdf Description: MOSFET N-CH 30V 66A 8PDFN
товар відсутній
TSM061NA03CV RGG TSM061NA03CV RGG Taiwan Semiconductor Corporation TSM061NA03CV_B1610.pdf Description: MOSFET N-CH 30V 66A 8PDFN
товар відсутній
TSM070NA04LCR RLG TSM070NA04LCR RLG Taiwan Semiconductor Corporation TSM070NA04LCR_B1611.pdf Description: MOSFET N-CH 40V 91A 8PDFN
на замовлення 4930 шт:
термін постачання 21-31 дні (днів)
TSM070NA04LCR RLG TSM070NA04LCR RLG Taiwan Semiconductor Corporation TSM070NA04LCR_B1611.pdf Description: MOSFET N-CH 40V 91A 8PDFN
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
TSM070NA04LCR RLG TSM070NA04LCR RLG Taiwan Semiconductor Corporation TSM070NA04LCR_B1611.pdf Description: MOSFET N-CH 40V 91A 8PDFN
на замовлення 4930 шт:
термін постачання 21-31 дні (днів)
TSM080N03EPQ56 RLG TSM080N03EPQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 55A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
TSM080N03EPQ56 RLG TSM080N03EPQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 55A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 4381 шт:
термін постачання 21-31 дні (днів)
7+44.9 грн
10+ 37.47 грн
100+ 25.92 грн
500+ 20.33 грн
1000+ 17.3 грн
Мінімальне замовлення: 7
TSM080N03PQ56 RLG TSM080N03PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 73A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V
товар відсутній
TSM080N03PQ56 RLG TSM080N03PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 30V 73A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V
на замовлення 2375 шт:
термін постачання 21-31 дні (днів)
8+39.91 грн
10+ 33.49 грн
100+ 23.21 грн
500+ 18.2 грн
1000+ 15.49 грн
Мінімальне замовлення: 8
TSM085N03PQ33 RGG TSM085N03PQ33 RGG Taiwan Semiconductor Corporation pdf.php?pn=TSM085N03PQ33 Description: MOSFET N-CH 30V 52A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
товар відсутній
TSM085N03PQ33 RGG TSM085N03PQ33 RGG Taiwan Semiconductor Corporation pdf.php?pn=TSM085N03PQ33 Description: MOSFET N-CH 30V 52A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)
7+41.34 грн
10+ 33.63 грн
100+ 23.41 грн
500+ 17.15 грн
1000+ 13.94 грн
Мінімальне замовлення: 7
TSM088NA03CR RLG TSM088NA03CR RLG Taiwan Semiconductor Corporation TSM088NA03CR_C1610.pdf Description: MOSFET N-CH 30V 61A 8PDFN
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
TSM088NA03CR RLG TSM088NA03CR RLG Taiwan Semiconductor Corporation TSM088NA03CR_C1610.pdf Description: MOSFET N-CH 30V 61A 8PDFN
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
TSM089N08LCR RLG TSM089N08LCR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 80V 67A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+55.59 грн
5000+ 51.52 грн
Мінімальне замовлення: 2500
TSM089N08LCR RLG TSM089N08LCR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 80V 67A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
3+123.3 грн
10+ 98.62 грн
100+ 78.48 грн
500+ 62.32 грн
1000+ 52.88 грн
Мінімальне замовлення: 3
TSM090N03CP ROG TSM090N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+18.02 грн
Мінімальне замовлення: 2500
TSM090N03CP ROG TSM090N03CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 4376 шт:
термін постачання 21-31 дні (днів)
7+47.04 грн
10+ 39.53 грн
100+ 27.39 грн
500+ 21.48 грн
1000+ 18.28 грн
Мінімальне замовлення: 7
TSM090N03ECP ROG TSM090N03ECP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+18.02 грн
5000+ 16.43 грн
12500+ 15.22 грн
Мінімальне замовлення: 2500
TSM090N03ECP ROG TSM090N03ECP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 30V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 17590 шт:
термін постачання 21-31 дні (днів)
7+47.04 грн
10+ 39.53 грн
100+ 27.39 грн
500+ 21.48 грн
1000+ 18.28 грн
Мінімальне замовлення: 7
TSM100N06CZ C0G TSM100N06CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
2+147.53 грн
Мінімальне замовлення: 2
TSM10N80CI C0G TSM10N80CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 9.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2336 pF @ 25 V
товар відсутній
TSM10N80CZ C0G TSM10N80CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 9.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.75A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2336 pF @ 25 V
товар відсутній
TSM10NC60CF C0G TSM10NC60CF C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 600V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 50 V
товар відсутній
TSM10NC65CF C0G TSM10NC65CF C0G Taiwan Semiconductor Corporation TSM10NC65CF_A1605.pdf Description: MOSFET N-CH 650V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 50 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+238.04 грн
Мінімальне замовлення: 2
TSM120N06LCP ROG TSM120N06LCP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)
2500+26.28 грн
5000+ 24.1 грн
12500+ 22.98 грн
25000+ 21.53 грн
Мінімальне замовлення: 2500
TSM120N06LCP ROG TSM120N06LCP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V
на замовлення 53988 шт:
термін постачання 21-31 дні (днів)
5+64.14 грн
10+ 50.03 грн
100+ 38.93 грн
500+ 30.96 грн
1000+ 25.22 грн
Мінімальне замовлення: 5
TSM120N06LCR RLG TSM120N06LCR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 30 V
товар відсутній
TSM120N06LCS RLG TSM120N06LCS RLG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 23A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2193 pF @ 30 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+24.64 грн
5000+ 22.6 грн
12500+ 21.56 грн
Мінімальне замовлення: 2500
TSM120N06LCS RLG TSM120N06LCS RLG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 23A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2193 pF @ 30 V
на замовлення 13767 шт:
термін постачання 21-31 дні (днів)
5+59.87 грн
10+ 46.94 грн
100+ 36.51 грн
500+ 29.04 грн
1000+ 23.66 грн
Мінімальне замовлення: 5
TSM120NA03CR RLG TSM120NA03CR RLG Taiwan Semiconductor Corporation TSM120NA03CR_B1610.pdf Description: MOSFET N-CH 30V 39A 8PDFN
товар відсутній
TSM120NA03CR RLG TSM120NA03CR RLG Taiwan Semiconductor Corporation TSM120NA03CR_B1610.pdf Description: MOSFET N-CH 30V 39A 8PDFN
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
TSM126CX RFG TSM126CX RFG Taiwan Semiconductor Corporation TSM126_A14.pdf Description: MOSFET N-CH 600V 30MA SOT23
товар відсутній
TSM126CX RFG TSM126CX RFG Taiwan Semiconductor Corporation TSM126_A14.pdf Description: MOSFET N-CH 600V 30MA SOT23
на замовлення 538 шт:
термін постачання 21-31 дні (днів)
TSM150P03PQ33 RGG TSM150P03PQ33 RGG Taiwan Semiconductor Corporation Description: MOSFET P-CH 30V 36A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+13.98 грн
10000+ 12.47 грн
Мінімальне замовлення: 5000
TSM150P03PQ33 RGG TSM150P03PQ33 RGG Taiwan Semiconductor Corporation Description: MOSFET P-CH 30V 36A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V
на замовлення 22375 шт:
термін постачання 21-31 дні (днів)
8+38.49 грн
10+ 32.39 грн
100+ 22.44 грн
500+ 17.59 грн
1000+ 14.97 грн
2000+ 13.34 грн
Мінімальне замовлення: 8
TSM150P04LCS RLG TSM150P04LCS RLG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 40V 22A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+22.09 грн
5000+ 20.15 грн
12500+ 18.66 грн
Мінімальне замовлення: 2500
TSM150P04LCS RLG TSM150P04LCS RLG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 40V 22A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V
на замовлення 17799 шт:
термін постачання 21-31 дні (днів)
5+57.73 грн
10+ 48.45 грн
100+ 33.58 грн
500+ 26.33 грн
1000+ 22.41 грн
Мінімальне замовлення: 5
TSM15N50CI C0G TSM15N50CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 500V 14A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2263 pF @ 25 V
товар відсутній
TSM15N50CZ C0G TSM15N50CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 500V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2263 pF @ 25 V
товар відсутній
TSM160N10CZ C0G TSM160N10CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 160A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9840 pF @ 30 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
2+178.17 грн
10+ 142.82 грн
Мінімальне замовлення: 2
TSM160N10LCR RLG TSM160N10LCR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 46A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4431 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+49.08 грн
5000+ 45.49 грн
Мінімальне замовлення: 2500
TSM160N10LCR RLG TSM160N10LCR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 46A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4431 pF @ 50 V
на замовлення 10887 шт:
термін постачання 21-31 дні (днів)
3+108.33 грн
10+ 87.09 грн
100+ 69.3 грн
500+ 55.03 грн
1000+ 46.69 грн
Мінімальне замовлення: 3
TSM160P02CS RLG TSM160P02CS RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM160P02CS Description: MOSFET P-CHANNEL 20V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
товар відсутній
TSM160P02CS RLG TSM160P02CS RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM160P02CS Description: MOSFET P-CHANNEL 20V 11A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
на замовлення 3293 шт:
термін постачання 21-31 дні (днів)
3+107.62 грн
10+ 84.69 грн
100+ 65.89 грн
500+ 52.41 грн
1000+ 42.69 грн
Мінімальне замовлення: 3
TSM170N06CH C5G TSM170N06CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 38A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 28496 шт:
термін постачання 21-31 дні (днів)
5+59.87 грн
75+ 47.8 грн
150+ 34.69 грн
525+ 27.21 грн
1050+ 23.15 грн
2025+ 20.62 грн
5025+ 19.22 грн
10050+ 17.79 грн
Мінімальне замовлення: 5
TSM170N06CP ROG TSM170N06CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 38A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
2500+20.02 грн
Мінімальне замовлення: 2500
TSM170N06CP ROG TSM170N06CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 38A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 111866 шт:
термін постачання 21-31 дні (днів)
7+42.76 грн
10+ 35.62 грн
100+ 24.64 грн
500+ 19.32 грн
1000+ 18.09 грн
Мінімальне замовлення: 7
TSM170N06PQ56 RLG TSM170N06PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 44A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 30 V
товар відсутній
TSM055N03PQ56 RLG
TSM055N03PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
товар відсутній
TSM055N03PQ56 RLG
TSM055N03PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+49.18 грн
10+ 40.9 грн
100+ 28.31 грн
Мінімальне замовлення: 6
TSM05N03CW RPG pdf.php?pn=TSM05N03CW
TSM05N03CW RPG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+16.22 грн
5000+ 14.79 грн
12500+ 13.7 грн
Мінімальне замовлення: 2500
TSM05N03CW RPG pdf.php?pn=TSM05N03CW
TSM05N03CW RPG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
на замовлення 22115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+42.76 грн
10+ 35.62 грн
100+ 24.66 грн
500+ 19.33 грн
1000+ 16.45 грн
Мінімальне замовлення: 7
TSM060N03CP ROG
TSM060N03CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+20.5 грн
5000+ 18.7 грн
Мінімальне замовлення: 2500
TSM060N03CP ROG
TSM060N03CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
на замовлення 8244 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+54.17 грн
10+ 45.02 грн
100+ 31.17 грн
500+ 24.44 грн
1000+ 20.8 грн
Мінімальне замовлення: 6
TSM060N03ECP ROG
TSM060N03ECP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
товар відсутній
TSM060N03ECP ROG
TSM060N03ECP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
на замовлення 1587 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+54.17 грн
10+ 45.02 грн
100+ 31.17 грн
500+ 24.44 грн
1000+ 20.8 грн
Мінімальне замовлення: 6
TSM060N03PQ33 RGG
TSM060N03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 62A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+13.85 грн
Мінімальне замовлення: 5000
TSM060N03PQ33 RGG
TSM060N03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 62A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V
на замовлення 12065 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+43.47 грн
10+ 35.62 грн
100+ 24.76 грн
500+ 18.14 грн
1000+ 14.75 грн
2000+ 13.18 грн
Мінімальне замовлення: 7
TSM061NA03CR RLG TSM061NA03CR_B1610.pdf
TSM061NA03CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 88A 8PDFN
товар відсутній
TSM061NA03CR RLG TSM061NA03CR_B1610.pdf
TSM061NA03CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 88A 8PDFN
товар відсутній
TSM061NA03CV RGG TSM061NA03CV_B1610.pdf
TSM061NA03CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 66A 8PDFN
товар відсутній
TSM061NA03CV RGG TSM061NA03CV_B1610.pdf
TSM061NA03CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 66A 8PDFN
товар відсутній
TSM070NA04LCR RLG TSM070NA04LCR_B1611.pdf
TSM070NA04LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 91A 8PDFN
на замовлення 4930 шт:
термін постачання 21-31 дні (днів)
TSM070NA04LCR RLG TSM070NA04LCR_B1611.pdf
TSM070NA04LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 91A 8PDFN
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
TSM070NA04LCR RLG TSM070NA04LCR_B1611.pdf
TSM070NA04LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 91A 8PDFN
на замовлення 4930 шт:
термін постачання 21-31 дні (днів)
TSM080N03EPQ56 RLG
TSM080N03EPQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 55A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
TSM080N03EPQ56 RLG
TSM080N03EPQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 55A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 4381 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+44.9 грн
10+ 37.47 грн
100+ 25.92 грн
500+ 20.33 грн
1000+ 17.3 грн
Мінімальне замовлення: 7
TSM080N03PQ56 RLG
TSM080N03PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 73A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V
товар відсутній
TSM080N03PQ56 RLG
TSM080N03PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 73A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V
на замовлення 2375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+39.91 грн
10+ 33.49 грн
100+ 23.21 грн
500+ 18.2 грн
1000+ 15.49 грн
Мінімальне замовлення: 8
TSM085N03PQ33 RGG pdf.php?pn=TSM085N03PQ33
TSM085N03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 52A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
товар відсутній
TSM085N03PQ33 RGG pdf.php?pn=TSM085N03PQ33
TSM085N03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 52A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+41.34 грн
10+ 33.63 грн
100+ 23.41 грн
500+ 17.15 грн
1000+ 13.94 грн
Мінімальне замовлення: 7
TSM088NA03CR RLG TSM088NA03CR_C1610.pdf
TSM088NA03CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 61A 8PDFN
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
TSM088NA03CR RLG TSM088NA03CR_C1610.pdf
TSM088NA03CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 61A 8PDFN
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
TSM089N08LCR RLG
TSM089N08LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 80V 67A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+55.59 грн
5000+ 51.52 грн
Мінімальне замовлення: 2500
TSM089N08LCR RLG
TSM089N08LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 80V 67A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+123.3 грн
10+ 98.62 грн
100+ 78.48 грн
500+ 62.32 грн
1000+ 52.88 грн
Мінімальне замовлення: 3
TSM090N03CP ROG
TSM090N03CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+18.02 грн
Мінімальне замовлення: 2500
TSM090N03CP ROG
TSM090N03CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 4376 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+47.04 грн
10+ 39.53 грн
100+ 27.39 грн
500+ 21.48 грн
1000+ 18.28 грн
Мінімальне замовлення: 7
TSM090N03ECP ROG
TSM090N03ECP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+18.02 грн
5000+ 16.43 грн
12500+ 15.22 грн
Мінімальне замовлення: 2500
TSM090N03ECP ROG
TSM090N03ECP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 17590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+47.04 грн
10+ 39.53 грн
100+ 27.39 грн
500+ 21.48 грн
1000+ 18.28 грн
Мінімальне замовлення: 7
TSM100N06CZ C0G
TSM100N06CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+147.53 грн
Мінімальне замовлення: 2
TSM10N80CI C0G
TSM10N80CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 9.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2336 pF @ 25 V
товар відсутній
TSM10N80CZ C0G
TSM10N80CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 9.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.75A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2336 pF @ 25 V
товар відсутній
TSM10NC60CF C0G
TSM10NC60CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 50 V
товар відсутній
TSM10NC65CF C0G TSM10NC65CF_A1605.pdf
TSM10NC65CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 10A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 50 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+238.04 грн
Мінімальне замовлення: 2
TSM120N06LCP ROG
TSM120N06LCP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+26.28 грн
5000+ 24.1 грн
12500+ 22.98 грн
25000+ 21.53 грн
Мінімальне замовлення: 2500
TSM120N06LCP ROG
TSM120N06LCP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V
на замовлення 53988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+64.14 грн
10+ 50.03 грн
100+ 38.93 грн
500+ 30.96 грн
1000+ 25.22 грн
Мінімальне замовлення: 5
TSM120N06LCR RLG
TSM120N06LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 54A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 30 V
товар відсутній
TSM120N06LCS RLG
TSM120N06LCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 23A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2193 pF @ 30 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+24.64 грн
5000+ 22.6 грн
12500+ 21.56 грн
Мінімальне замовлення: 2500
TSM120N06LCS RLG
TSM120N06LCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 23A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2193 pF @ 30 V
на замовлення 13767 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+59.87 грн
10+ 46.94 грн
100+ 36.51 грн
500+ 29.04 грн
1000+ 23.66 грн
Мінімальне замовлення: 5
TSM120NA03CR RLG TSM120NA03CR_B1610.pdf
TSM120NA03CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 39A 8PDFN
товар відсутній
TSM120NA03CR RLG TSM120NA03CR_B1610.pdf
TSM120NA03CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 39A 8PDFN
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
TSM126CX RFG TSM126_A14.pdf
TSM126CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 30MA SOT23
товар відсутній
TSM126CX RFG TSM126_A14.pdf
TSM126CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 30MA SOT23
на замовлення 538 шт:
термін постачання 21-31 дні (днів)
TSM150P03PQ33 RGG
TSM150P03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 30V 36A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+13.98 грн
10000+ 12.47 грн
Мінімальне замовлення: 5000
TSM150P03PQ33 RGG
TSM150P03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 30V 36A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V
на замовлення 22375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+38.49 грн
10+ 32.39 грн
100+ 22.44 грн
500+ 17.59 грн
1000+ 14.97 грн
2000+ 13.34 грн
Мінімальне замовлення: 8
TSM150P04LCS RLG
TSM150P04LCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 40V 22A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+22.09 грн
5000+ 20.15 грн
12500+ 18.66 грн
Мінімальне замовлення: 2500
TSM150P04LCS RLG
TSM150P04LCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 40V 22A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V
на замовлення 17799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+57.73 грн
10+ 48.45 грн
100+ 33.58 грн
500+ 26.33 грн
1000+ 22.41 грн
Мінімальне замовлення: 5
TSM15N50CI C0G
TSM15N50CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 14A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2263 pF @ 25 V
товар відсутній
TSM15N50CZ C0G
TSM15N50CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2263 pF @ 25 V
товар відсутній
TSM160N10CZ C0G
TSM160N10CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 160A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9840 pF @ 30 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+178.17 грн
10+ 142.82 грн
Мінімальне замовлення: 2
TSM160N10LCR RLG
TSM160N10LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 46A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4431 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+49.08 грн
5000+ 45.49 грн
Мінімальне замовлення: 2500
TSM160N10LCR RLG
TSM160N10LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 46A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4431 pF @ 50 V
на замовлення 10887 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.33 грн
10+ 87.09 грн
100+ 69.3 грн
500+ 55.03 грн
1000+ 46.69 грн
Мінімальне замовлення: 3
TSM160P02CS RLG pdf.php?pn=TSM160P02CS
TSM160P02CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
товар відсутній
TSM160P02CS RLG pdf.php?pn=TSM160P02CS
TSM160P02CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 11A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
на замовлення 3293 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+107.62 грн
10+ 84.69 грн
100+ 65.89 грн
500+ 52.41 грн
1000+ 42.69 грн
Мінімальне замовлення: 3
TSM170N06CH C5G
TSM170N06CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 38A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 28496 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+59.87 грн
75+ 47.8 грн
150+ 34.69 грн
525+ 27.21 грн
1050+ 23.15 грн
2025+ 20.62 грн
5025+ 19.22 грн
10050+ 17.79 грн
Мінімальне замовлення: 5
TSM170N06CP ROG
TSM170N06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 38A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+20.02 грн
Мінімальне замовлення: 2500
TSM170N06CP ROG
TSM170N06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 38A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 111866 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+42.76 грн
10+ 35.62 грн
100+ 24.64 грн
500+ 19.32 грн
1000+ 18.09 грн
Мінімальне замовлення: 7
TSM170N06PQ56 RLG
TSM170N06PQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 44A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 30 V
товар відсутній
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