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TSM60N900CP ROG TSM60N900CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
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TSM60NB190CF C0G TSM60NB190CF C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NB190CF Description: MOSFET N-CH 600V 18A ITO220S
Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 59.5W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 3524 шт:
термін постачання 21-31 дні (днів)
2+294.31 грн
10+237.78 грн
100+192.32 грн
500+160.43 грн
1000+137.37 грн
2000+129.35 грн
Мінімальне замовлення: 2
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TSM60NB1R4CH C5G TSM60NB1R4CH C5G Taiwan Semiconductor Corporation TSM60NB1R4CH_A1608.pdf Description: MOSFET N-CHANNEL 600V 3A TO251
на замовлення 21686 шт:
термін постачання 21-31 дні (днів)
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TSM60NB1R4CP ROG TSM60NB1R4CP ROG Taiwan Semiconductor Corporation TSM60NB1R4CP_A1608.pdf Description: MOSFET N-CHANNEL 600V 3A TO252
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TSM60NB1R4CP ROG TSM60NB1R4CP ROG Taiwan Semiconductor Corporation TSM60NB1R4CP_A1608.pdf Description: MOSFET N-CHANNEL 600V 3A TO252
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)
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TSM60NB380CF C0G TSM60NB380CF C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 600V 11A ITO220S
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
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TSM60NB600CF C0G TSM60NB600CF C0G Taiwan Semiconductor Corporation TSM60NB600CF_A1701.pdf Description: MOSFET N-CH 600V 8A ITO220S
на замовлення 3582 шт:
термін постачання 21-31 дні (днів)
2+290.36 грн
10+250.73 грн
100+205.44 грн
500+164.13 грн
1000+138.42 грн
2000+134.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM60NB900CH C5G TSM60NB900CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 4A TO251
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
3+147.95 грн
Мінімальне замовлення: 3
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TSM60NB900CP ROG TSM60NB900CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 4A TO252
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
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TSM60NB900CP ROG TSM60NB900CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
3+147.95 грн
10+91.04 грн
100+61.77 грн
500+46.20 грн
1000+42.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TSM6502CR RLG TSM6502CR RLG Taiwan Semiconductor Corporation TSM6502CR_A1701.pdf Description: MOSFET N/P-CH 60V 24A 8PDFN
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+32.12 грн
5000+28.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM6502CR RLG TSM6502CR RLG Taiwan Semiconductor Corporation TSM6502CR_A1701.pdf Description: MOSFET N/P-CH 60V 24A 8PDFN
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 7038 шт:
термін постачання 21-31 дні (днів)
3+118.67 грн
10+72.22 грн
100+49.24 грн
500+38.24 грн
1000+32.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TSM650N15CR RLG TSM650N15CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 150V 24A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TSM650N15CR RLG TSM650N15CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 150V 24A 8PDFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
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TSM650P02CX RFG TSM650P02CX RFG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
3000+7.69 грн
6000+7.10 грн
9000+6.39 грн
30000+5.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSM650P02CX RFG TSM650P02CX RFG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
на замовлення 70024 шт:
термін постачання 21-31 дні (днів)
12+28.48 грн
15+21.33 грн
100+12.78 грн
500+11.10 грн
1000+7.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TSM650P03CX RFG TSM650P03CX RFG Taiwan Semiconductor Corporation TSM650P03CX_B1811.pdf Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
3000+9.58 грн
6000+8.41 грн
9000+7.99 грн
15000+7.06 грн
21000+6.80 грн
30000+6.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSM650P03CX RFG TSM650P03CX RFG Taiwan Semiconductor Corporation TSM650P03CX_B1811.pdf Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
на замовлення 60630 шт:
термін постачання 21-31 дні (днів)
8+42.72 грн
13+25.22 грн
100+16.05 грн
500+11.37 грн
1000+10.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TSM680P06CH X0G TSM680P06CH X0G Taiwan Semiconductor Corporation TSM680P06CH_A2204.pdf Description: MOSFET P-CHANNEL 60V 18A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
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TSM680P06CP ROG TSM680P06CP ROG Taiwan Semiconductor Corporation TSM680P06CP_A2204.pdf Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+20.37 грн
5000+18.09 грн
7500+17.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM680P06CP ROG TSM680P06CP ROG Taiwan Semiconductor Corporation TSM680P06CP_A2204.pdf Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 12123 шт:
термін постачання 21-31 дні (днів)
5+64.88 грн
10+45.18 грн
100+30.87 грн
500+22.87 грн
1000+20.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TSM680P06DPQ56 RLG TSM680P06DPQ56 RLG Taiwan Semiconductor Corporation TSM680P06D_B1710.pdf Description: MOSFET 2P-CH 60V 12A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+30.01 грн
5000+26.82 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM680P06DPQ56 RLG TSM680P06DPQ56 RLG Taiwan Semiconductor Corporation TSM680P06D_B1710.pdf Description: MOSFET 2P-CH 60V 12A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 9816 шт:
термін постачання 21-31 дні (днів)
3+110.76 грн
10+67.65 грн
100+45.08 грн
500+33.22 грн
1000+30.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TSM6963SDCA RVG TSM6963SDCA RVG Taiwan Semiconductor Corporation Description: MOSFET 2P-CH 20V 4.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
3000+30.02 грн
6000+26.86 грн
9000+25.84 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSM6963SDCA RVG TSM6963SDCA RVG Taiwan Semiconductor Corporation Description: MOSFET 2P-CH 20V 4.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 63143 шт:
термін постачання 21-31 дні (днів)
3+113.93 грн
10+69.33 грн
100+46.14 грн
500+33.96 грн
1000+30.95 грн
Мінімальне замовлення: 3
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TSM6968DCA RVG TSM6968DCA RVG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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TSM6968DCA RVG TSM6968DCA RVG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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TSM6N60CH C5G TSM6N60CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
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TSM6N60CP ROG TSM6N60CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
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TSM70N10CP ROG TSM70N10CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 100V 70A TO252
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
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TSM70N10CP ROG TSM70N10CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 100V 70A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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TSM70N1R4CH C5G TSM70N1R4CH C5G Taiwan Semiconductor Corporation TSM70N1R4_D1706.pdf Description: MOSFET N-CH 700V 3.3A TO251
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TSM70N1R4CP ROG TSM70N1R4CP ROG Taiwan Semiconductor Corporation TSM70N1R4_D1706.pdf Description: MOSFET N-CH 700V 3.3A TO252
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TSM70N1R4CP ROG TSM70N1R4CP ROG Taiwan Semiconductor Corporation TSM70N1R4_D1706.pdf Description: MOSFET N-CH 700V 3.3A TO252
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TSM70N1R4CP ROG TSM70N1R4CP ROG Taiwan Semiconductor Corporation TSM70N1R4_D1706.pdf Description: MOSFET N-CH 700V 3.3A TO252
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TSM70N380CH C5G TSM70N380CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 11A TO251
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
на замовлення 691 шт:
термін постачання 21-31 дні (днів)
2+276.12 грн
75+139.67 грн
150+128.58 грн
525+105.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM70N380CI C0G TSM70N380CI C0G Taiwan Semiconductor Corporation TSM70N380_E1706.pdf Description: MOSFET N-CH 700V 11A ITO220AB
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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TSM70N380CP ROG TSM70N380CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 11A TO252
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+112.67 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM70N380CP ROG TSM70N380CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
на замовлення 14899 шт:
термін постачання 21-31 дні (днів)
1+324.38 грн
10+205.70 грн
100+145.26 грн
500+112.10 грн
1000+104.33 грн
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TSM70N600ACL X0G TSM70N600ACL X0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 8A TO262S
Packaging: Tube
Package / Case: TO-262-3 Short Leads, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262S (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
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TSM70N600CH C5G TSM70N600CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 8A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
2+245.26 грн
75+112.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM70N600CI C0G TSM70N600CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
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TSM70N600CP ROG TSM70N600CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
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TSM70N600CP ROG TSM70N600CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
2+245.26 грн
Мінімальне замовлення: 2
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TSM70N750CH C5G TSM70N750CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
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TSM70N750CP ROG TSM70N750CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
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TSM70N750CP ROG TSM70N750CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
2+216.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM70N900CH C5G TSM70N900CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 4.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70N900CI C0G TSM70N900CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 4.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70N900CP ROG TSM70N900CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 4.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70NB1R4CP ROG TSM70NB1R4CP ROG Taiwan Semiconductor Corporation TSM70NB1R4CP_C1612.pdf Description: MOSFET N-CHANNEL 700V 3A TO252
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TSM70NB1R4CP ROG TSM70NB1R4CP ROG Taiwan Semiconductor Corporation TSM70NB1R4CP_C1612.pdf Description: MOSFET N-CHANNEL 700V 3A TO252
на замовлення 2302 шт:
термін постачання 21-31 дні (днів)
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TSM7N90CI C0G TSM7N90CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 900V 7A ITO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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TSM7N90CZ C0G TSM7N90CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 900V 7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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TSM7NC60CF C0G TSM7NC60CF C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM7NC60CF Description: MOSFET N-CH 600V 7A ITO220S
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 44.6W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TSM7NC65CF C0G TSM7NC65CF C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 650V 7A ITO220S
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 44.6W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TSM7P06CP ROG TSM7P06CP ROG Taiwan Semiconductor Corporation TSM7P06_B1802.pdf Description: MOSFET P-CHANNEL 60V 7A TO252
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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TSM7P06CP ROG TSM7P06CP ROG Taiwan Semiconductor Corporation TSM7P06_B1802.pdf Description: MOSFET P-CHANNEL 60V 7A TO252
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 4003 шт:
термін постачання 21-31 дні (днів)
8+41.14 грн
10+34.36 грн
100+23.76 грн
500+18.63 грн
1000+15.86 грн
Мінімальне замовлення: 8
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TSM80N08CZ C0G TSM80N08CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 75V 80A TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91.5 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 113.6W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
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TSM80N1R2CH C5G TSM80N1R2CH C5G Taiwan Semiconductor Corporation TSM80N1R2_B1706.pdf Description: MOSFET N-CH 800V 5.5A TO251
на замовлення 3710 шт:
термін постачання 21-31 дні (днів)
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TSM60N900CP ROG
TSM60N900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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TSM60NB190CF C0G pdf.php?pn=TSM60NB190CF
TSM60NB190CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A ITO220S
Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 59.5W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 3524 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+294.31 грн
10+237.78 грн
100+192.32 грн
500+160.43 грн
1000+137.37 грн
2000+129.35 грн
Мінімальне замовлення: 2
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TSM60NB1R4CH C5G TSM60NB1R4CH_A1608.pdf
TSM60NB1R4CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 3A TO251
на замовлення 21686 шт:
термін постачання 21-31 дні (днів)
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TSM60NB1R4CP ROG TSM60NB1R4CP_A1608.pdf
TSM60NB1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 3A TO252
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TSM60NB1R4CP ROG TSM60NB1R4CP_A1608.pdf
TSM60NB1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 3A TO252
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)
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TSM60NB380CF C0G
TSM60NB380CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 11A ITO220S
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
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TSM60NB600CF C0G TSM60NB600CF_A1701.pdf
TSM60NB600CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 8A ITO220S
на замовлення 3582 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+290.36 грн
10+250.73 грн
100+205.44 грн
500+164.13 грн
1000+138.42 грн
2000+134.83 грн
Мінімальне замовлення: 2
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TSM60NB900CH C5G
TSM60NB900CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO251
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.95 грн
Мінімальне замовлення: 3
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TSM60NB900CP ROG
TSM60NB900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
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TSM60NB900CP ROG
TSM60NB900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.95 грн
10+91.04 грн
100+61.77 грн
500+46.20 грн
1000+42.42 грн
Мінімальне замовлення: 3
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TSM6502CR RLG TSM6502CR_A1701.pdf
TSM6502CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A 8PDFN
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+32.12 грн
5000+28.94 грн
Мінімальне замовлення: 2500
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TSM6502CR RLG TSM6502CR_A1701.pdf
TSM6502CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A 8PDFN
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 7038 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.67 грн
10+72.22 грн
100+49.24 грн
500+38.24 грн
1000+32.40 грн
Мінімальне замовлення: 3
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TSM650N15CR RLG
TSM650N15CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 24A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TSM650N15CR RLG
TSM650N15CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 24A 8PDFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
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TSM650P02CX RFG
TSM650P02CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.69 грн
6000+7.10 грн
9000+6.39 грн
30000+5.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSM650P02CX RFG
TSM650P02CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
на замовлення 70024 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.48 грн
15+21.33 грн
100+12.78 грн
500+11.10 грн
1000+7.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TSM650P03CX RFG TSM650P03CX_B1811.pdf
TSM650P03CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.58 грн
6000+8.41 грн
9000+7.99 грн
15000+7.06 грн
21000+6.80 грн
30000+6.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSM650P03CX RFG TSM650P03CX_B1811.pdf
TSM650P03CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
на замовлення 60630 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.72 грн
13+25.22 грн
100+16.05 грн
500+11.37 грн
1000+10.18 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TSM680P06CH X0G TSM680P06CH_A2204.pdf
TSM680P06CH X0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 18A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
товару немає в наявності
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TSM680P06CP ROG TSM680P06CP_A2204.pdf
TSM680P06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+20.37 грн
5000+18.09 грн
7500+17.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM680P06CP ROG TSM680P06CP_A2204.pdf
TSM680P06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 12123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+64.88 грн
10+45.18 грн
100+30.87 грн
500+22.87 грн
1000+20.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TSM680P06DPQ56 RLG TSM680P06D_B1710.pdf
TSM680P06DPQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 60V 12A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.01 грн
5000+26.82 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM680P06DPQ56 RLG TSM680P06D_B1710.pdf
TSM680P06DPQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 60V 12A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 9816 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+110.76 грн
10+67.65 грн
100+45.08 грн
500+33.22 грн
1000+30.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TSM6963SDCA RVG
TSM6963SDCA RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+30.02 грн
6000+26.86 грн
9000+25.84 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSM6963SDCA RVG
TSM6963SDCA RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 63143 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.93 грн
10+69.33 грн
100+46.14 грн
500+33.96 грн
1000+30.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TSM6968DCA RVG
TSM6968DCA RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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TSM6968DCA RVG
TSM6968DCA RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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TSM6N60CH C5G
TSM6N60CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
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TSM6N60CP ROG
TSM6N60CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
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TSM70N10CP ROG
TSM70N10CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 70A TO252
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
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TSM70N10CP ROG
TSM70N10CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 70A TO252
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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TSM70N1R4CH C5G TSM70N1R4_D1706.pdf
TSM70N1R4CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 3.3A TO251
товару немає в наявності
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TSM70N1R4CP ROG TSM70N1R4_D1706.pdf
TSM70N1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 3.3A TO252
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TSM70N1R4CP ROG TSM70N1R4_D1706.pdf
TSM70N1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 3.3A TO252
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TSM70N1R4CP ROG TSM70N1R4_D1706.pdf
TSM70N1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 3.3A TO252
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TSM70N380CH C5G
TSM70N380CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 11A TO251
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
на замовлення 691 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+276.12 грн
75+139.67 грн
150+128.58 грн
525+105.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM70N380CI C0G TSM70N380_E1706.pdf
TSM70N380CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 11A ITO220AB
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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TSM70N380CP ROG
TSM70N380CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 11A TO252
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+112.67 грн
Мінімальне замовлення: 2500
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TSM70N380CP ROG
TSM70N380CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
на замовлення 14899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+324.38 грн
10+205.70 грн
100+145.26 грн
500+112.10 грн
1000+104.33 грн
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TSM70N600ACL X0G
TSM70N600ACL X0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 8A TO262S
Packaging: Tube
Package / Case: TO-262-3 Short Leads, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262S (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
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TSM70N600CH C5G
TSM70N600CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 8A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+245.26 грн
75+112.36 грн
Мінімальне замовлення: 2
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TSM70N600CI C0G
TSM70N600CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
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TSM70N600CP ROG
TSM70N600CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
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TSM70N600CP ROG
TSM70N600CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+245.26 грн
Мінімальне замовлення: 2
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TSM70N750CH C5G
TSM70N750CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
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TSM70N750CP ROG
TSM70N750CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
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TSM70N750CP ROG
TSM70N750CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+216.78 грн
Мінімальне замовлення: 2
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TSM70N900CH C5G
TSM70N900CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 4.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70N900CI C0G
TSM70N900CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 4.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70N900CP ROG
TSM70N900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 4.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70NB1R4CP ROG TSM70NB1R4CP_C1612.pdf
TSM70NB1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 3A TO252
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TSM70NB1R4CP ROG TSM70NB1R4CP_C1612.pdf
TSM70NB1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 3A TO252
на замовлення 2302 шт:
термін постачання 21-31 дні (днів)
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TSM7N90CI C0G
TSM7N90CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 7A ITO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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TSM7N90CZ C0G
TSM7N90CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 900V 7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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TSM7NC60CF C0G pdf.php?pn=TSM7NC60CF
TSM7NC60CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 7A ITO220S
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 44.6W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TSM7NC65CF C0G
TSM7NC65CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 7A ITO220S
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 44.6W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TSM7P06CP ROG TSM7P06_B1802.pdf
TSM7P06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 7A TO252
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
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TSM7P06CP ROG TSM7P06_B1802.pdf
TSM7P06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 7A TO252
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 4003 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.14 грн
10+34.36 грн
100+23.76 грн
500+18.63 грн
1000+15.86 грн
Мінімальне замовлення: 8
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TSM80N08CZ C0G
TSM80N08CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 75V 80A TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91.5 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 113.6W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
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TSM80N1R2CH C5G TSM80N1R2_B1706.pdf
TSM80N1R2CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A TO251
на замовлення 3710 шт:
термін постачання 21-31 дні (днів)
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