Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13460) > Сторінка 153 з 225
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TCR3UF105A,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.05V 300MA SMV |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TCR3UF105A,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.05V 300MA SMV |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TCR3UF09A,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 0.9V 300MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 580 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 0.9V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.157V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCR3UF09A,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 0.9V 300MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 580 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 0.9V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.157V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 5369 шт: термін постачання 21-31 дні (днів) |
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RN4987FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 |
на замовлення 11244 шт: термін постачання 21-31 дні (днів) |
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| TLP531(GR-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(GRL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(MBS,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(Y-LF5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(MBSIN-TP5,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(BL-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(BL-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(YG,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(HIT-BL-L1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(GR-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(Y-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(HIT-BL-T1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(BL-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(HIT-BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(MBS-TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(Y,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(GR,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP531(GB,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TK90S06N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 90A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TK90S06N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 90A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V |
на замовлення 9627 шт: термін постачання 21-31 дні (днів) |
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RN1105MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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RN1105MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 26586 шт: термін постачання 21-31 дні (днів) |
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TC74HC7292AP(F) | Toshiba Semiconductor and Storage |
Description: IC OSC CLOCK CMOS LOGIC 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Type: Clock Oscillator Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-DIP Part Status: Not For New Designs Current - Supply: 4 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLP781F(D4-FUNGR,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TK1K2A60F,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 6A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 630µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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SSM6J214FE(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 3.6A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
на замовлення 4511 шт: термін постачання 21-31 дні (днів) |
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TK2K2A60F,S4X | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 350µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4682,T6CSF(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 15V 3A TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4682,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 15V 3A TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| KIA78L12BP | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR LDO 12V DIP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLP7830(D4-LF4,E | Toshiba Semiconductor and Storage |
Description: IC OP AMP ISOLATION SO8 Packaging: Tube Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Modulator Data Interface: Serial Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V Resolution (Bits): 16 b Voltage Supply Source: Dual Supply Supplier Device Package: 8-SO Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TODX2355(F) | Toshiba Semiconductor and Storage |
Description: TXRX MOD OPTICAL 10MBPS 650NMPackaging: Bulk Connector Type: JIS F07 Wavelength: 650nm Mounting Type: Through Hole Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Data Rate: 10Mbps |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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2SC3672-O(T2ASH,FM | Toshiba Semiconductor and Storage |
Description: TRANS NPN 100MA 300V SC71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TK110U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=190W F=1MHZPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK110U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=190W F=1MHZPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
на замовлення 5932 шт: термін постачання 21-31 дні (днів) |
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TK110P10PL,RQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TK110P10PL,RQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
на замовлення 7230 шт: термін постачання 21-31 дні (днів) |
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| TK11S10N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 11A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TK11S10N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 11A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CEZ36V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC ESC |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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CEZ36V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC ESC |
на замовлення 15621 шт: термін постачання 21-31 дні (днів) |
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MSZ36V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC SMINI |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MSZ36V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC SMINI |
на замовлення 5897 шт: термін постачання 21-31 дні (днів) |
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MUZ36V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC USM |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
MUZ36V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC USM |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
CUZ36V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC USC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
CUZ36V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC USC |
на замовлення 1812 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| KIA78DL05PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 5V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL06PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 6V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL08PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 8V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL09PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 9V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL10PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 10V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL15PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 15V TO220 |
товару немає в наявності |
В кошику од. на суму грн. |
| TCR3UF105A,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 300MA SMV
Description: IC REG LINEAR 1.05V 300MA SMV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TCR3UF105A,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 300MA SMV
Description: IC REG LINEAR 1.05V 300MA SMV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TCR3UF09A,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.157V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.157V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| TCR3UF09A,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.157V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 580 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.157V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 5369 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.78 грн |
| 26+ | 12.50 грн |
| 29+ | 11.04 грн |
| 100+ | 8.86 грн |
| 250+ | 8.14 грн |
| 500+ | 7.72 грн |
| 1000+ | 7.24 грн |
| RN4987FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
на замовлення 11244 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.33 грн |
| 34+ | 9.36 грн |
| 100+ | 5.79 грн |
| 500+ | 3.98 грн |
| 1000+ | 3.51 грн |
| 2000+ | 3.11 грн |
| TLP531(GR-LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(GRL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(MBS,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(BL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(Y-LF5,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(MBSIN-TP5,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(BL-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(BL-TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(YG,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(HIT-BL-L1,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(GR-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(Y-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(HIT-BL-T1,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(BL-LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(HIT-BL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(MBS-TP5,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(Y,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(GR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP531(GB,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TK90S06N1L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 46.74 грн |
| TK90S06N1L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
на замовлення 9627 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.38 грн |
| 10+ | 69.04 грн |
| 100+ | 53.68 грн |
| 500+ | 42.71 грн |
| 1000+ | 42.24 грн |
| RN1105MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.14 грн |
| 16000+ | 1.76 грн |
| RN1105MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 26586 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.07 грн |
| 36+ | 8.96 грн |
| 100+ | 4.83 грн |
| 500+ | 3.56 грн |
| 1000+ | 2.47 грн |
| 2000+ | 2.05 грн |
| TC74HC7292AP(F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC OSC CLOCK CMOS LOGIC 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Clock Oscillator
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-DIP
Part Status: Not For New Designs
Current - Supply: 4 µA
Description: IC OSC CLOCK CMOS LOGIC 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Clock Oscillator
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-DIP
Part Status: Not For New Designs
Current - Supply: 4 µA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4-FUNGR,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TK1K2A60F,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V
Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.14 грн |
| 10+ | 69.91 грн |
| SSM6J214FE(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 4511 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.56 грн |
| 14+ | 23.28 грн |
| 100+ | 15.27 грн |
| 500+ | 11.01 грн |
| 1000+ | 8.94 грн |
| TK2K2A60F,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 350µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4682,T6CSF(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4682,T6F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| TLP7830(D4-LF4,E |
Виробник: Toshiba Semiconductor and Storage
Description: IC OP AMP ISOLATION SO8
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Modulator
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SO
Number of Channels: 1
Description: IC OP AMP ISOLATION SO8
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Modulator
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SO
Number of Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| TODX2355(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1222.44 грн |
| 15+ | 887.95 грн |
| 2SC3672-O(T2ASH,FM |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100MA 300V SC71
Description: TRANS NPN 100MA 300V SC71
товару немає в наявності
В кошику
од. на суму грн.
| TK110U65Z,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 177.40 грн |
| TK110U65Z,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
на замовлення 5932 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 382.98 грн |
| 10+ | 209.09 грн |
| TK110P10PL,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 32.41 грн |
| 5000+ | 29.02 грн |
| TK110P10PL,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
на замовлення 7230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.06 грн |
| 10+ | 71.56 грн |
| 100+ | 49.67 грн |
| 500+ | 36.78 грн |
| 1000+ | 33.62 грн |
| TK11S10N1L,LXHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Description: MOSFET N-CH 100V 11A DPAK
товару немає в наявності
В кошику
од. на суму грн.
| TK11S10N1L,LXHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Description: MOSFET N-CH 100V 11A DPAK
товару немає в наявності
В кошику
од. на суму грн.
| CEZ36V,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC ESC
Description: TVS DIODE 36VWM 63VC ESC
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 4.21 грн |
| CEZ36V,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC ESC
Description: TVS DIODE 36VWM 63VC ESC
на замовлення 15621 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.76 грн |
| 15+ | 21.86 грн |
| 100+ | 11.57 грн |
| 500+ | 7.14 грн |
| 1000+ | 4.86 грн |
| 2000+ | 4.38 грн |
| MSZ36V,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC SMINI
Description: TVS DIODE 36VWM 63VC SMINI
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.48 грн |
| MSZ36V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC SMINI
Description: TVS DIODE 36VWM 63VC SMINI
на замовлення 5897 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.03 грн |
| 13+ | 24.69 грн |
| 100+ | 13.07 грн |
| 500+ | 8.07 грн |
| 1000+ | 5.49 грн |
| MUZ36V,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USM
Description: TVS DIODE 36VWM 63VC USM
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MUZ36V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USM
Description: TVS DIODE 36VWM 63VC USM
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| CUZ36V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USC
Description: TVS DIODE 36VWM 63VC USC
товару немає в наявності
В кошику
од. на суму грн.
| CUZ36V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USC
Description: TVS DIODE 36VWM 63VC USC
на замовлення 1812 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| KIA78DL05PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 5V TO220
Description: IC REG LINEAR LDO 5V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL06PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 6V TO220
Description: IC REG LINEAR LDO 6V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL08PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 8V TO220
Description: IC REG LINEAR LDO 8V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL09PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 9V TO220
Description: IC REG LINEAR LDO 9V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL10PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 10V TO220
Description: IC REG LINEAR LDO 10V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL15PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 15V TO220
Description: IC REG LINEAR LDO 15V TO220
товару немає в наявності
В кошику
од. на суму грн.


















