Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13063) > Сторінка 153 з 218
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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CRG05(TE85L,Q,M) | Toshiba Semiconductor and Storage | Description: DIODE GEN PURP 800V 1A S-FLAT |
товар відсутній |
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TC7MBL3253CFK(EL) | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 2 X 4:1 16VSSOP Packaging: Tape & Reel (TR) Package / Case: 16-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Circuit: 2 x 4:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-VSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC7MBL3253CFK(EL) | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 2 X 4:1 16VSSOP Packaging: Cut Tape (CT) Package / Case: 16-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Circuit: 2 x 4:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-VSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC7MBL3257CFK(EL) | Toshiba Semiconductor and Storage | Description: IC MUX/DEMUX 4 X 2:1 16VSSOP |
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TCR5RG1225A,LF | Toshiba Semiconductor and Storage |
Description: LDO REG, IOUT: 500MA VOUT: 1.225 Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.225V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR5RG1225A,LF | Toshiba Semiconductor and Storage |
Description: LDO REG, IOUT: 500MA VOUT: 1.225 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.225V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Protection Features: Over Current, Over Temperature |
на замовлення 9975 шт: термін постачання 21-31 дні (днів) |
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TCR5RG12A,LF | Toshiba Semiconductor and Storage |
Description: LDO REG, IOUT: 500MA VOUT: 1.2V Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.2V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Protection Features: Over Current, Over Temperature |
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TCR5RG12A,LF | Toshiba Semiconductor and Storage |
Description: LDO REG, IOUT: 500MA VOUT: 1.2V Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.2V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Protection Features: Over Current, Over Temperature |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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TCK108AG,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 4WCSPD Packaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 4-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPD (0.79x0.79) Part Status: Active |
на замовлення 13514 шт: термін постачання 21-31 дні (днів) |
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TA78DS12BP,F(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 30MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 30mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 1.5 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 12V Voltage Dropout (Max): 0.3V @ 10mA Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage Current - Supply (Max): 1.5 mA |
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HDKCB16ZKA01T | Toshiba Semiconductor and Storage |
Description: 500GB 2.5" SATA III 5V 5.4RPM Packaging: Bulk Size / Dimension: 100.45mm x 69.85mm x 9.50mm Memory Size: 500GB Type: SATA III Weight: 3.26 oz (92.89 g) Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V Form Factor: 2.5" Part Status: Active |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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RN1701,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1701,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: USV |
на замовлення 6359 шт: термін постачання 21-31 дні (днів) |
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RN1706,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV Part Status: Active |
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RN1706,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV Part Status: Active |
на замовлення 3563 шт: термін постачання 21-31 дні (днів) |
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RN1703,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1703,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1709,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1709,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR3UM09A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 0.9V 300MA 4DFN |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3UM09A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 0.9V 300MA 4DFN |
на замовлення 22260 шт: термін постачання 21-31 дні (днів) |
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TLP750(D4-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(NEMIC-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4-YASK,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4SHR-OT4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4-TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4MAT-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4-O-TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4-O-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4-O,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4-O-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(NEMIC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP750(D4-O-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
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TLP383(BL-TPL,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
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TLP383(E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
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TLP383(D4-GB,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
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TLP383(GB,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
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TLP383(BL,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
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TLP383(TPL,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
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TLP383(D4,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
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DSF01S30SC,L3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 100MA SC2 |
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TB62215AHQ,8 | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP Packaging: Tube Package / Case: 25-SIP Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 25-HZIP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
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TB67H302HG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 8V-42V 25HZIP Packaging: Tube Package / Case: 25-SIP Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 4.5A Interface: Parallel, PWM Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 8V ~ 42V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 8V ~ 42V Supplier Device Package: 25-HZIP Motor Type - AC, DC: Brushed DC |
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TB62213AHQ,8 | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER BIPLR 25V 25HZIP |
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TB67S141HG | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER UNIPOLAR 25HZIP |
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TB62213AHQ | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER BIPLR 25V 25HZIP |
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TB62215AHQ | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP Packaging: Tray Package / Case: 25-SIP Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 25-HZIP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
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GT8G133(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: IGBT 400V 600MW 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A Supplier Device Package: 8-TSSOP Td (on/off) @ 25°C: 1.7µs/2µs Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector Pulsed (Icm): 150 A Power - Max: 600 mW |
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RN2103,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
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RN2103,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
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RN2103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
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RN2103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 6790 шт: термін постачання 21-31 дні (днів) |
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RN2103MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товар відсутній |
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TJ60S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V |
товар відсутній |
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TJ60S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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TC7SZ34AFS,L3J(T | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V FSV Packaging: Tape & Reel (TR) Package / Case: SOT-953 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: fSV |
товар відсутній |
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HDKGB13A2A01T | Toshiba Semiconductor and Storage |
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM Packaging: Bulk Size / Dimension: 100.45mm x 69.85mm x 9.50mm Memory Size: 1TB Memory Type: Magnetic Disk (HDD) Type: SATA III Weight: 4.13 oz (117 g) Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V Form Factor: 2.5" Part Status: Active |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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CRG05(TE85L,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 800V 1A S-FLAT
Description: DIODE GEN PURP 800V 1A S-FLAT
товар відсутній
TC7MBL3253CFK(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 2 X 4:1 16VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-VSSOP
Description: IC MUX/DEMUX 2 X 4:1 16VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-VSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 23.63 грн |
TC7MBL3253CFK(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 2 X 4:1 16VSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-VSSOP
Description: IC MUX/DEMUX 2 X 4:1 16VSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-VSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.59 грн |
10+ | 51.81 грн |
25+ | 48.65 грн |
100+ | 37.25 грн |
250+ | 34.61 грн |
500+ | 29.45 грн |
1000+ | 23.18 грн |
TC7MBL3257CFK(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 2:1 16VSSOP
Description: IC MUX/DEMUX 4 X 2:1 16VSSOP
товар відсутній
TCR5RG1225A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.225
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.225V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
Description: LDO REG, IOUT: 500MA VOUT: 1.225
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.225V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 9.2 грн |
TCR5RG1225A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.225
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.225V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
Description: LDO REG, IOUT: 500MA VOUT: 1.225
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.225V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
на замовлення 9975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.04 грн |
11+ | 26.85 грн |
25+ | 24.58 грн |
100+ | 17.17 грн |
250+ | 15.56 грн |
500+ | 12.87 грн |
1000+ | 9.5 грн |
2500+ | 8.71 грн |
TCR5RG12A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.2V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.2V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
Description: LDO REG, IOUT: 500MA VOUT: 1.2V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.2V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
товар відсутній
TCR5RG12A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.2V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.2V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
Description: LDO REG, IOUT: 500MA VOUT: 1.2V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.2V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.77 грн |
11+ | 27.49 грн |
25+ | 25.14 грн |
100+ | 17.57 грн |
250+ | 15.92 грн |
500+ | 13.18 грн |
1000+ | 9.72 грн |
2500+ | 8.91 грн |
TCK108AG,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSPD
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPD (0.79x0.79)
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 4WCSPD
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPD (0.79x0.79)
Part Status: Active
на замовлення 13514 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.39 грн |
12+ | 25.03 грн |
25+ | 22.83 грн |
100+ | 15.95 грн |
250+ | 14.45 грн |
500+ | 11.96 грн |
1000+ | 8.82 грн |
2500+ | 8.09 грн |
TA78DS12BP,F(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 30MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 30mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 12V
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage
Current - Supply (Max): 1.5 mA
Description: IC REG LINEAR 12V 30MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 30mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 12V
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage
Current - Supply (Max): 1.5 mA
товар відсутній
HDKCB16ZKA01T |
Виробник: Toshiba Semiconductor and Storage
Description: 500GB 2.5" SATA III 5V 5.4RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 500GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
Description: 500GB 2.5" SATA III 5V 5.4RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 500GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
на замовлення 210 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3594.65 грн |
10+ | 3137.16 грн |
25+ | 3029.01 грн |
50+ | 2741.1 грн |
100+ | 2700.49 грн |
RN1701,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.28 грн |
RN1701,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: USV
на замовлення 6359 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 19.71 грн |
22+ | 12.86 грн |
100+ | 6.29 грн |
500+ | 4.92 грн |
1000+ | 3.42 грн |
RN1706,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
товар відсутній
RN1706,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
Description: NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Part Status: Active
на замовлення 3563 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 18.98 грн |
22+ | 12.79 грн |
100+ | 6.25 грн |
500+ | 4.89 грн |
1000+ | 3.4 грн |
RN1703,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.28 грн |
RN1703,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 19.71 грн |
22+ | 12.86 грн |
100+ | 6.28 грн |
500+ | 4.92 грн |
1000+ | 3.42 грн |
RN1709,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.26 грн |
RN1709,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 18.98 грн |
22+ | 12.79 грн |
100+ | 6.25 грн |
500+ | 4.89 грн |
1000+ | 3.4 грн |
TCR3UM09A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4DFN
Description: IC REG LINEAR 0.9V 300MA 4DFN
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)TCR3UM09A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4DFN
Description: IC REG LINEAR 0.9V 300MA 4DFN
на замовлення 22260 шт:
термін постачання 21-31 дні (днів)TLP750(D4-TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(NEMIC-LF2,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4-YASK,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4SHR-OT4,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4-TP4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4MAT-LF2,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4-O-TP4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4-LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4-O-LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4-O,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4-O-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(NEMIC,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP750(D4-O-TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товар відсутній
TLP383(BL-TPL,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
товар відсутній
TLP383(E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
товар відсутній
TLP383(D4-GB,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
товар відсутній
TLP383(GB,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
товар відсутній
TLP383(BL,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
товар відсутній
TLP383(TPL,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
товар відсутній
TLP383(D4,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
товар відсутній
DSF01S30SC,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Description: DIODE SCHOTTKY 30V 100MA SC2
товар відсутній
TB62215AHQ,8 |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товар відсутній
TB67H302HG |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 8V-42V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4.5A
Interface: Parallel, PWM
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 42V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 42V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 8V-42V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4.5A
Interface: Parallel, PWM
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 42V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 42V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
товар відсутній
TB62213AHQ,8 |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
товар відсутній
TB67S141HG |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
товар відсутній
TB62213AHQ |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
товар відсутній
TB62215AHQ |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tray
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Packaging: Tray
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товар відсутній
GT8G133(TE12L,Q) |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 400V 600MW 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
Supplier Device Package: 8-TSSOP
Td (on/off) @ 25°C: 1.7µs/2µs
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 600 mW
Description: IGBT 400V 600MW 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
Supplier Device Package: 8-TSSOP
Td (on/off) @ 25°C: 1.7µs/2µs
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 600 mW
товар відсутній
RN2103,LF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
RN2103,LF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
RN2103MFV,L3F(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
RN2103MFV,L3F(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 6790 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 12.41 грн |
26+ | 10.97 грн |
100+ | 5.98 грн |
500+ | 3.45 грн |
1000+ | 2.35 грн |
2000+ | 2 грн |
RN2103MFV,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
TJ60S04M3L,LXHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
товар відсутній
TJ60S04M3L,LXHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 90.52 грн |
10+ | 71.07 грн |
TC7SZ34AFS,L3J(T |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: fSV
Description: IC BUFFER NON-INVERT 5.5V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: fSV
товар відсутній
HDKGB13A2A01T |
Виробник: Toshiba Semiconductor and Storage
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Weight: 4.13 oz (117 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Weight: 4.13 oz (117 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
на замовлення 24 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4875.12 грн |
10+ | 4254.21 грн |