Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 158 з 226
| Фото | Назва | Виробник | Інформація |
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2SA1586-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 1595 шт: термін постачання 21-31 дні (днів) |
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2SA1586-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A USMPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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2SA1586-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 3466 шт: термін постачання 21-31 дні (днів) |
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2SA1588-O,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 30V 0.5A SC-70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 100 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SA1586-Y(T5LND,F) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM3K16CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA CST3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM3K16CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
на замовлення 6059 шт: термін постачання 21-31 дні (днів) |
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SSM3K347R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23FInput Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Drain to Source Voltage (Vdss): 38 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSM3K347R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23FInput Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Drain to Source Voltage (Vdss): 38 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Cut Tape (CT) |
на замовлення 12430 шт: термін постачання 21-31 дні (днів) |
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SSM6J50TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2.5A UF6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM6J50TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2.5A UF6 |
на замовлення 3461 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TPH7R204PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 48A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.4V @ 200µA Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TB6584AFNG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 6V-16.5V 30SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB6586BFG,EL,DRY | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6J801R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6TSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM6J801R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN1C01FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN DUAL 50V 150MA US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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HN1C01FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN DUAL 50V 150MA US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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HN1C01FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN DUAL 50V 150MA US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HN1C01FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN DUAL 50V 150MA US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
на замовлення 5870 шт: термін постачання 21-31 дні (днів) |
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TB67Z800FTG,EL | Toshiba Semiconductor and Storage |
Description: IC HALF BRIDGE DRIVER 3A 36VQFNPackaging: Tape & Reel (TR) Package / Case: 36-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Current - Output / Channel: 3A Voltage - Load: 5.5V ~ 22V Supplier Device Package: 36-VQFN (5x5) Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TB67Z800FTG,EL | Toshiba Semiconductor and Storage |
Description: IC HALF BRIDGE DRIVER 3A 36VQFNPackaging: Cut Tape (CT) Package / Case: 36-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Current - Output / Channel: 3A Voltage - Load: 5.5V ~ 22V Supplier Device Package: 36-VQFN (5x5) Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive Part Status: Active |
на замовлення 10873 шт: термін постачання 21-31 дні (днів) |
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HN1B04FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HN1B04FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5998 шт: термін постачання 21-31 дні (днів) |
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HN1B04FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HN1B04FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5950 шт: термін постачання 21-31 дні (днів) |
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HN1B04FE-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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HN1B04FE-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7998 шт: термін постачання 21-31 дні (днів) |
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HN1B04FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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HN1B04FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM3K361TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A UFMPackaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
на замовлення 11951 шт: термін постачання 21-31 дні (днів) |
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RN4902FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RN4902FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TC35679FSG-002 | Toshiba Semiconductor and Storage |
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFNCurrent - Transmitting: 3.3mA Current - Receiving: 3.3mA Protocol: Bluetooth v4.2 Power - Output: 0dBm Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C Type: TxRx + MCU Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -93dBm Package / Case: 60-VFQFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Obsolete Serial Interfaces: I²C, SPI, UART RF Family/Standard: Bluetooth Supplier Device Package: 60-QFN (7x7) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TC3567CFSG-002(E1C | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART RF Family/Standard: Bluetooth GPIO: 17 Supplier Device Package: 40-QFN (5x5) Current - Transmitting: 3.3mA Data Rate (Max): 921.6kbps Current - Receiving: 3.3mA Protocol: Bluetooth v4.2 Power - Output: 0dBm Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: TxRx + MCU Memory Size: 128kB Flash, 51kB RAM Frequency: 2.4GHz ~ 2.4835GHz Mounting Type: Surface Mount Sensitivity: -93.5dBm DigiKey Programmable: Not Verified Part Status: Obsolete Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TC3567CFSG-002(ELG | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Current - Transmitting: 3.3mA Data Rate (Max): 921.6kbps Current - Receiving: 3.3mA Protocol: Bluetooth v4.2 Power - Output: 0dBm Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: TxRx + MCU Memory Size: 128kB Flash, 51kB RAM Frequency: 2.4GHz ~ 2.4835GHz Mounting Type: Surface Mount Sensitivity: -93.5dBm Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Obsolete Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART RF Family/Standard: Bluetooth GPIO: 17 Supplier Device Package: 40-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TC3567DFSG-002(E1C | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN DigiKey Programmable: Not Verified Part Status: Obsolete Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM RF Family/Standard: Bluetooth GPIO: 17 Supplier Device Package: 40-QFN (5x5) Current - Transmitting: 3.3mA Data Rate (Max): 921.6kbps Current - Receiving: 3.3mA Protocol: Bluetooth v4.2 Power - Output: 0dBm Voltage - Supply: 1.8V ~ 3.8V Operating Temperature: -40°C ~ 85°C (TA) Type: TxRx + MCU Memory Size: 51kB RAM Frequency: 2.4GHz ~ 2.4835GHz Mounting Type: Surface Mount Sensitivity: -93.5dBm Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TC3567DFSG-002(ELG | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN DigiKey Programmable: Not Verified Part Status: Obsolete Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM RF Family/Standard: Bluetooth GPIO: 17 Supplier Device Package: 40-QFN (5x5) Current - Transmitting: 3.3mA Data Rate (Max): 921.6kbps Current - Receiving: 3.3mA Protocol: Bluetooth v4.2 Power - Output: 0dBm Voltage - Supply: 1.8V ~ 3.8V Operating Temperature: -40°C ~ 85°C (TA) Type: TxRx + MCU Memory Size: 51kB RAM Frequency: 2.4GHz ~ 2.4835GHz Mounting Type: Surface Mount Sensitivity: -93.5dBm Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
RN2906FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOHVoltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN2906FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOHQualification: AEC-Q101 Grade: Automotive Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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TLP2110(TP,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SOCurrent - Output / Channel: 10 mA Number of Channels: 2 Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 25kV/µs Rise / Fall Time (Typ): 11ns, 13ns Supplier Device Package: 8-SO Inputs - Side 1/Side 2: 2/0 Current - DC Forward (If) (Max): 8mA Voltage - Isolation: 2500Vrms Input Type: DC Data Rate: 5MBd Voltage - Forward (Vf) (Typ): 1.53V Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| TLP2118(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER SO8 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP2118(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER SO8 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
TC9591XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC BRIDGE 80VFBGADigiKey Programmable: Not Verified Grade: Automotive Supplier Device Package: 80-VFBGA (7x7) Type: Bridge Mounting Type: Surface Mount Package / Case: 80-VFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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TC9591XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC BRIDGE 80VFBGADigiKey Programmable: Not Verified Grade: Automotive Supplier Device Package: 80-VFBGA (7x7) Type: Bridge Mounting Type: Surface Mount Package / Case: 80-VFBGA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TC9593XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC BRIDGE 64VFBGADigiKey Programmable: Not Verified Grade: Automotive Supplier Device Package: 64-VFBGA (6x6) Type: Bridge Mounting Type: Surface Mount Package / Case: 64-VFBGA Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TC9593XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC BRIDGE 64VFBGADigiKey Programmable: Not Verified Grade: Automotive Supplier Device Package: 64-VFBGA (6x6) Type: Bridge Mounting Type: Surface Mount Package / Case: 64-VFBGA Packaging: Cut Tape (CT) |
на замовлення 7496 шт: термін постачання 21-31 дні (днів) |
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TC9590XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC BRIDGE 64LFBGAPart Status: Active Supplier Device Package: 64-LFBGA (7x7) Type: Bridge Mounting Type: Surface Mount Package / Case: 64-LFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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TC9590XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC BRIDGE 64LFBGAPackage / Case: 64-LFBGA Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 64-LFBGA (7x7) Type: Bridge Mounting Type: Surface Mount DigiKey Programmable: Not Verified Grade: Automotive |
на замовлення 572 шт: термін постачання 21-31 дні (днів) |
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TC9594XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC BRIDGE 80VFBGAType: Bridge Mounting Type: Surface Mount Package / Case: 80-VFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Grade: Automotive Supplier Device Package: 80-VFBGA (7x7) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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TC9592XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC BRIDGE 49VFBGADigiKey Programmable: Not Verified Grade: Automotive Supplier Device Package: 49-VFBGA (5x5) Type: Bridge Mounting Type: Surface Mount Package / Case: 49-VFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
TC9595XBG(EL) | Toshiba Semiconductor and Storage |
Description: IC BRIDGE 80VFBGADigiKey Programmable: Not Verified Grade: Automotive Supplier Device Package: 80-VFBGA (7x7) Type: Bridge Mounting Type: Surface Mount Package / Case: 80-VFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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2SC5201(T6MURATAFM | Toshiba Semiconductor and Storage |
Description: TRANS NPN 600V 0.05A TO-92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 mA Part Status: Obsolete Supplier Device Package: TO-92MOD DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB9120FTG(EL) | Toshiba Semiconductor and Storage |
Description: AUTOMOTIVE STEPPING MOTOR DRIVER |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TB9120FTG(EL) | Toshiba Semiconductor and Storage |
Description: AUTOMOTIVE STEPPING MOTOR DRIVER |
на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DF2S5.6CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No Part Status: Active |
на замовлення 14651 шт: термін постачання 21-31 дні (днів) |
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| 4N35(SHORT-LF1,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR TRANS Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 4N35(SHORT-LF5,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR TRANS Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 4N35(SHORT-TP1,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR TRANS Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 4N35(SHORT-TP5,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR TRANS Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SA1586-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 1595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 22.15 грн |
| 24+ | 12.88 грн |
| 100+ | 8.04 грн |
| 500+ | 5.57 грн |
| 1000+ | 4.93 грн |
| 2SA1586-Y,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 2SA1586-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 3466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 22.15 грн |
| 24+ | 12.88 грн |
| 100+ | 8.04 грн |
| 500+ | 5.57 грн |
| 1000+ | 4.93 грн |
| 2SA1588-O,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.03 грн |
| 2SA1586-Y(T5LND,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
товару немає в наявності
В кошику
од. на суму грн.
| SSM3K16CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SSM3K16CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
на замовлення 6059 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.20 грн |
| 29+ | 10.59 грн |
| 100+ | 6.59 грн |
| 500+ | 4.54 грн |
| 1000+ | 4.01 грн |
| 2000+ | 3.56 грн |
| 5000+ | 3.02 грн |
| SSM3K347R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Drain to Source Voltage (Vdss): 38 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 38V 2A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Drain to Source Voltage (Vdss): 38 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 7.05 грн |
| 6000+ | 6.63 грн |
| 9000+ | 5.88 грн |
| SSM3K347R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Drain to Source Voltage (Vdss): 38 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 38V 2A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Drain to Source Voltage (Vdss): 38 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
на замовлення 12430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.44 грн |
| 14+ | 21.79 грн |
| 100+ | 10.99 грн |
| 500+ | 9.14 грн |
| 1000+ | 7.12 грн |
| SSM6J50TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.5A UF6
Description: MOSFET P-CH 20V 2.5A UF6
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6J50TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.5A UF6
Description: MOSFET P-CH 20V 2.5A UF6
на замовлення 3461 шт:
термін постачання 21-31 дні (днів)
| TPH7R204PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 48A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 48A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 19.04 грн |
| 6000+ | 17.60 грн |
| 9000+ | 16.87 грн |
| TB6584AFNG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 6V-16.5V 30SSOP
Description: IC MOTOR DRIVER 6V-16.5V 30SSOP
товару немає в наявності
В кошику
од. на суму грн.
| TB6586BFG,EL,DRY |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP
Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J801R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6TSOP
Description: MOSFET P-CH 20V 6A 6TSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6J801R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6TSOP
Description: MOSFET P-CH 20V 6A 6TSOP
товару немає в наявності
В кошику
од. на суму грн.
| HN1C01FU-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.09 грн |
| 6000+ | 8.88 грн |
| HN1C01FU-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.10 грн |
| HN1C01FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.09 грн |
| HN1C01FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 5870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.51 грн |
| 12+ | 26.13 грн |
| 100+ | 16.73 грн |
| 500+ | 11.91 грн |
| 1000+ | 10.68 грн |
| TB67Z800FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 82.80 грн |
| TB67Z800FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
на замовлення 10873 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 268.20 грн |
| 10+ | 165.48 грн |
| 25+ | 141.16 грн |
| 100+ | 106.64 грн |
| 250+ | 93.92 грн |
| 500+ | 86.08 грн |
| 1000+ | 78.20 грн |
| HN1B04FU-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.39 грн |
| HN1B04FU-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.36 грн |
| 20+ | 15.77 грн |
| 100+ | 9.44 грн |
| 500+ | 8.20 грн |
| 1000+ | 5.78 грн |
| HN1B04FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.39 грн |
| HN1B04FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.36 грн |
| 20+ | 15.77 грн |
| 100+ | 9.44 грн |
| 500+ | 8.20 грн |
| 1000+ | 5.78 грн |
| HN1B04FE-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 9.13 грн |
| HN1B04FE-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 12+ | 25.83 грн |
| 100+ | 17.92 грн |
| 500+ | 13.13 грн |
| 1000+ | 10.67 грн |
| 2000+ | 9.54 грн |
| HN1B04FE-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| HN1B04FE-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
товару немає в наявності
В кошику
од. на суму грн.
| SSM3K361TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
на замовлення 11951 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.68 грн |
| 11+ | 28.87 грн |
| 100+ | 18.57 грн |
| 500+ | 13.26 грн |
| 1000+ | 11.91 грн |
| RN4902FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RN4902FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
товару немає в наявності
В кошику
од. на суму грн.
| TC35679FSG-002 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Current - Transmitting: 3.3mA
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -93dBm
Package / Case: 60-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I²C, SPI, UART
RF Family/Standard: Bluetooth
Supplier Device Package: 60-QFN (7x7)
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Current - Transmitting: 3.3mA
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -93dBm
Package / Case: 60-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: I²C, SPI, UART
RF Family/Standard: Bluetooth
Supplier Device Package: 60-QFN (7x7)
товару немає в наявності
В кошику
од. на суму грн.
| TC3567CFSG-002(E1C |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
DigiKey Programmable: Not Verified
Part Status: Obsolete
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC RF TXRX BLUETOOTH QFN
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
DigiKey Programmable: Not Verified
Part Status: Obsolete
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TC3567CFSG-002(ELG |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Description: IC RF TXRX BLUETOOTH QFN
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
товару немає в наявності
В кошику
од. на суму грн.
| TC3567DFSG-002(E1C |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.8V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC RF TXRX BLUETOOTH QFN
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.8V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TC3567DFSG-002(ELG |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.8V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC RF TXRX BLUETOOTH QFN
DigiKey Programmable: Not Verified
Part Status: Obsolete
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
RF Family/Standard: Bluetooth
GPIO: 17
Supplier Device Package: 40-QFN (5x5)
Current - Transmitting: 3.3mA
Data Rate (Max): 921.6kbps
Current - Receiving: 3.3mA
Protocol: Bluetooth v4.2
Power - Output: 0dBm
Voltage - Supply: 1.8V ~ 3.8V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 51kB RAM
Frequency: 2.4GHz ~ 2.4835GHz
Mounting Type: Surface Mount
Sensitivity: -93.5dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RN2906FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 5.93 грн |
| RN2906FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.48 грн |
| 18+ | 16.99 грн |
| 100+ | 10.68 грн |
| 500+ | 7.47 грн |
| 1000+ | 6.64 грн |
| 2000+ | 5.94 грн |
| TLP2110(TP,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Current - Output / Channel: 10 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 11ns, 13ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 5MBd
Voltage - Forward (Vf) (Typ): 1.53V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Current - Output / Channel: 10 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 11ns, 13ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 5MBd
Voltage - Forward (Vf) (Typ): 1.53V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TC9591XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BRIDGE 80VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 80-VFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tape & Reel (TR)
Description: IC BRIDGE 80VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 80-VFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TC9591XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BRIDGE 80VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 80-VFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Cut Tape (CT)
Description: IC BRIDGE 80VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 80-VFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TC9593XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BRIDGE 64VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 64-VFBGA (6x6)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 64-VFBGA
Packaging: Tape & Reel (TR)
Description: IC BRIDGE 64VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 64-VFBGA (6x6)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 64-VFBGA
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 284.25 грн |
| TC9593XBG(EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BRIDGE 64VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 64-VFBGA (6x6)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 64-VFBGA
Packaging: Cut Tape (CT)
Description: IC BRIDGE 64VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 64-VFBGA (6x6)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 64-VFBGA
Packaging: Cut Tape (CT)
на замовлення 7496 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 652.71 грн |
| 10+ | 423.75 грн |
| 25+ | 370.23 грн |
| 100+ | 290.55 грн |
| 250+ | 262.55 грн |
| 500+ | 256.88 грн |
| TC9590XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BRIDGE 64LFBGA
Part Status: Active
Supplier Device Package: 64-LFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 64-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Grade: Automotive
Description: IC BRIDGE 64LFBGA
Part Status: Active
Supplier Device Package: 64-LFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 64-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TC9590XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BRIDGE 64LFBGA
Package / Case: 64-LFBGA
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 64-LFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Grade: Automotive
Description: IC BRIDGE 64LFBGA
Package / Case: 64-LFBGA
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 64-LFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Grade: Automotive
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 874.23 грн |
| 10+ | 592.65 грн |
| 25+ | 528.58 грн |
| 100+ | 428.79 грн |
| 250+ | 396.22 грн |
| 500+ | 376.39 грн |
| TC9594XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BRIDGE 80VFBGA
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 80-VFBGA (7x7)
Description: IC BRIDGE 80VFBGA
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 80-VFBGA (7x7)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TC9592XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BRIDGE 49VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 49-VFBGA (5x5)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 49-VFBGA
Packaging: Tape & Reel (TR)
Description: IC BRIDGE 49VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 49-VFBGA (5x5)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 49-VFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TC9595XBG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BRIDGE 80VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 80-VFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tape & Reel (TR)
Description: IC BRIDGE 80VFBGA
DigiKey Programmable: Not Verified
Grade: Automotive
Supplier Device Package: 80-VFBGA (7x7)
Type: Bridge
Mounting Type: Surface Mount
Package / Case: 80-VFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 2SC5201(T6MURATAFM |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 600V 0.05A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS NPN 600V 0.05A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TB9120FTG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE STEPPING MOTOR DRIVER
Description: AUTOMOTIVE STEPPING MOTOR DRIVER
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TB9120FTG(EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE STEPPING MOTOR DRIVER
Description: AUTOMOTIVE STEPPING MOTOR DRIVER
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
| DF2S5.6CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
на замовлення 14651 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 44+ | 7.09 грн |
| 100+ | 4.39 грн |
| 500+ | 2.99 грн |
| 1000+ | 2.63 грн |
| 2000+ | 2.32 грн |
| 5000+ | 1.95 грн |
| 4N35(SHORT-LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR TRANS
Packaging: Tube
Part Status: Obsolete
Description: OPTOISOLATOR TRANS
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 4N35(SHORT-LF5,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR TRANS
Packaging: Tube
Part Status: Obsolete
Description: OPTOISOLATOR TRANS
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 4N35(SHORT-TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR TRANS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: OPTOISOLATOR TRANS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 4N35(SHORT-TP5,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR TRANS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: OPTOISOLATOR TRANS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.



























