Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13489) > Сторінка 158 з 225
| Фото | Назва | Виробник | Інформація |
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2SA1832-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SA1832-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Qualification: AEC-Q101 |
на замовлення 3681 шт: термін постачання 21-31 дні (днів) |
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2SA1832-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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2SA1832-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| TLP137(BV,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Bulk Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP137(BV-TPL,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP137(BV-TPR,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP137(TPL,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP137(TPR,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 6-MFSOP, 5 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RN2402,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2402,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2302,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2302,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP240D(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-200VPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 250 mA Approval Agency: CQC, cUL, UL, VDE Supplier Device Package: 4-DIP Part Status: Active Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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TLP240D(LF1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-200VPackaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 250 mA Approval Agency: CQC, cUL, UL, VDE Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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TC74VCX245FK(EL) | Toshiba Semiconductor and Storage |
Description: IC TXRX NON-INVERT 3.6V 20VSSOPPackaging: Tape & Reel (TR) Package / Case: 20-VFSOP (0.118", 3.00mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-VSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC74VCX245FK(EL) | Toshiba Semiconductor and Storage |
Description: IC TXRX NON-INVERT 3.6V 20VSSOPPackaging: Cut Tape (CT) Package / Case: 20-VFSOP (0.118", 3.00mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-VSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1586-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A USMPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SA1586-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 7655 шт: термін постачання 21-31 дні (днів) |
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2SA1586-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A USMPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1586-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: USM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 3466 шт: термін постачання 21-31 дні (днів) |
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2SA1588-O,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 30V 0.5A SC-70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 100 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SA1586-Y(T5LND,F) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM3K16CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA CST3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SSM3K16CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
на замовлення 35350 шт: термін постачання 21-31 дні (днів) |
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SSM3K347R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSM3K347R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V |
на замовлення 12430 шт: термін постачання 21-31 дні (днів) |
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SSM6J50TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2.5A UF6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6J50TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2.5A UF6 |
на замовлення 3461 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TPH7R204PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 48A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TB6584AFNG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 6V-16.5V 30SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB6586BFG,EL,DRY | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6J801R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6J801R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CMH07(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 2A M-FLAT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HN1C01FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN DUAL 50V 150MA US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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HN1C01FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN DUAL 50V 150MA US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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HN1C01FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN DUAL 50V 150MA US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HN1C01FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN DUAL 50V 150MA US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
на замовлення 5870 шт: термін постачання 21-31 дні (днів) |
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TB67Z800FTG,EL | Toshiba Semiconductor and Storage |
Description: IC HALF BRIDGE DRIVER 3A 36VQFNPackaging: Tape & Reel (TR) Package / Case: 36-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Current - Output / Channel: 3A Voltage - Load: 5.5V ~ 22V Supplier Device Package: 36-VQFN (5x5) Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TB67Z800FTG,EL | Toshiba Semiconductor and Storage |
Description: IC HALF BRIDGE DRIVER 3A 36VQFNPackaging: Cut Tape (CT) Package / Case: 36-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Current - Output / Channel: 3A Voltage - Load: 5.5V ~ 22V Supplier Device Package: 36-VQFN (5x5) Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive Part Status: Active |
на замовлення 10873 шт: термін постачання 21-31 дні (днів) |
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HN1B04FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HN1B04FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5998 шт: термін постачання 21-31 дні (днів) |
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HN1B04FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HN1B04FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 150MHz, 120MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5950 шт: термін постачання 21-31 дні (днів) |
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HN1B04FE-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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HN1B04FE-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7998 шт: термін постачання 21-31 дні (днів) |
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HN1B04FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN1B04FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM3K361TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A UFMPackaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
на замовлення 11951 шт: термін постачання 21-31 дні (днів) |
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RN4902FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4902FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TC35679FSG-002 | Toshiba Semiconductor and Storage |
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFNPackaging: Tape & Reel (TR) Package / Case: 60-VFQFN Exposed Pad Sensitivity: -93dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Current - Transmitting: 3.3mA Supplier Device Package: 60-QFN (7x7) RF Family/Standard: Bluetooth Serial Interfaces: I²C, SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TC3567CFSG-002(E1C | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -93.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.4835GHz Memory Size: 128kB Flash, 51kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Data Rate (Max): 921.6kbps Current - Transmitting: 3.3mA Supplier Device Package: 40-QFN (5x5) GPIO: 17 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TC3567CFSG-002(ELG | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -93.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.4835GHz Memory Size: 128kB Flash, 51kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Data Rate (Max): 921.6kbps Current - Transmitting: 3.3mA Supplier Device Package: 40-QFN (5x5) GPIO: 17 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TC3567DFSG-002(E1C | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -93.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.4835GHz Memory Size: 51kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.8V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Data Rate (Max): 921.6kbps Current - Transmitting: 3.3mA Supplier Device Package: 40-QFN (5x5) GPIO: 17 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TC3567DFSG-002(ELG | Toshiba Semiconductor and Storage |
Description: IC RF TXRX BLUETOOTH QFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -93.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.4835GHz Memory Size: 51kB RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 3.8V Power - Output: 0dBm Protocol: Bluetooth v4.2 Current - Receiving: 3.3mA Data Rate (Max): 921.6kbps Current - Transmitting: 3.3mA Supplier Device Package: 40-QFN (5x5) GPIO: 17 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RN2906FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOHPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN2906FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOHPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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TLP2110(TP,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.53V Data Rate: 5MBd Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 11ns, 13ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Number of Channels: 2 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SA1832-Y,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.27 грн |
| 2SA1832-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 3681 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.84 грн |
| 22+ | 14.75 грн |
| 100+ | 9.24 грн |
| 500+ | 6.42 грн |
| 1000+ | 5.69 грн |
| 2SA1832-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.27 грн |
| 6000+ | 4.58 грн |
| 9000+ | 4.33 грн |
| 2SA1832-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.84 грн |
| 22+ | 14.75 грн |
| 100+ | 9.24 грн |
| 500+ | 6.42 грн |
| 1000+ | 5.69 грн |
| TLP137(BV,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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| TLP137(BV-TPL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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| TLP137(BV-TPR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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| TLP137(TPL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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| TLP137(TPR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRAN BASE 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 5 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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| RN2402,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.97 грн |
| 6000+ | 4.31 грн |
| RN2402,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.01 грн |
| 23+ | 14.03 грн |
| 100+ | 8.77 грн |
| 500+ | 6.08 грн |
| 1000+ | 5.38 грн |
| RN2302,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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| RN2302,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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| TLP240D(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
на замовлення 141 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.57 грн |
| 10+ | 90.82 грн |
| 100+ | 64.99 грн |
| TLP240D(LF1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 250 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.57 грн |
| 10+ | 90.82 грн |
| 100+ | 64.99 грн |
| TC74VCX245FK(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
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| TC74VCX245FK(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
Description: IC TXRX NON-INVERT 3.6V 20VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-VSSOP
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| 2SA1586-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.34 грн |
| 6000+ | 3.76 грн |
| 2SA1586-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 7655 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.53 грн |
| 26+ | 12.68 грн |
| 100+ | 7.91 грн |
| 500+ | 5.48 грн |
| 1000+ | 4.85 грн |
| 2SA1586-Y,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1586-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 3466 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.70 грн |
| 26+ | 12.28 грн |
| 100+ | 7.67 грн |
| 500+ | 5.31 грн |
| 1000+ | 4.70 грн |
| 2SA1588-O,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.17 грн |
| 2SA1586-Y(T5LND,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
товару немає в наявності
В кошику
од. на суму грн.
| SSM3K16CT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.02 грн |
| SSM3K16CT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
на замовлення 35350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.01 грн |
| 21+ | 15.39 грн |
| 100+ | 7.53 грн |
| 500+ | 5.89 грн |
| 1000+ | 4.09 грн |
| 2000+ | 3.55 грн |
| 5000+ | 3.24 грн |
| SSM3K347R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.38 грн |
| 6000+ | 6.94 грн |
| 9000+ | 6.15 грн |
| SSM3K347R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
на замовлення 12430 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.95 грн |
| 14+ | 22.81 грн |
| 100+ | 11.51 грн |
| 500+ | 9.57 грн |
| 1000+ | 7.45 грн |
| SSM6J50TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.5A UF6
Description: MOSFET P-CH 20V 2.5A UF6
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J50TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.5A UF6
Description: MOSFET P-CH 20V 2.5A UF6
на замовлення 3461 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TPH7R204PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Description: MOSFET N-CH 40V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.92 грн |
| 6000+ | 18.42 грн |
| 9000+ | 17.66 грн |
| TB6584AFNG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 6V-16.5V 30SSOP
Description: IC MOTOR DRIVER 6V-16.5V 30SSOP
товару немає в наявності
В кошику
од. на суму грн.
| TB6586BFG,EL,DRY |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP
Description: IC MOTOR DRVR 6.5V-16.5V 24SSOP
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J801R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6TSOP
Description: MOSFET P-CH 20V 6A 6TSOP
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J801R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6TSOP
Description: MOSFET P-CH 20V 6A 6TSOP
товару немає в наявності
В кошику
од. на суму грн.
| CMH07(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 2A M-FLAT
Description: DIODE GEN PURP 200V 2A M-FLAT
товару немає в наявності
В кошику
од. на суму грн.
| HN1C01FU-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.56 грн |
| 6000+ | 9.30 грн |
| HN1C01FU-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.20 грн |
| HN1C01FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.56 грн |
| HN1C01FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 5870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.54 грн |
| 12+ | 27.35 грн |
| 100+ | 17.51 грн |
| 500+ | 12.46 грн |
| 1000+ | 11.18 грн |
| TB67Z800FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 86.66 грн |
| TB67Z800FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 3A 36VQFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Current - Output / Channel: 3A
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 36-VQFN (5x5)
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
на замовлення 10873 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 280.71 грн |
| 10+ | 173.19 грн |
| 25+ | 147.74 грн |
| 100+ | 111.61 грн |
| 250+ | 98.30 грн |
| 500+ | 90.09 грн |
| 1000+ | 81.85 грн |
| HN1B04FU-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.69 грн |
| HN1B04FU-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.36 грн |
| 20+ | 16.51 грн |
| 100+ | 9.88 грн |
| 500+ | 8.58 грн |
| 1000+ | 6.04 грн |
| HN1B04FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.69 грн |
| HN1B04FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz, 120MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.36 грн |
| 20+ | 16.51 грн |
| 100+ | 9.88 грн |
| 500+ | 8.58 грн |
| 1000+ | 6.04 грн |
| HN1B04FE-Y,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 9.56 грн |
| HN1B04FE-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.12 грн |
| 12+ | 27.03 грн |
| 100+ | 18.75 грн |
| 500+ | 13.74 грн |
| 1000+ | 11.17 грн |
| 2000+ | 9.99 грн |
| HN1B04FE-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
товару немає в наявності
В кошику
од. на суму грн.
| HN1B04FE-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
товару немає в наявності
В кошику
од. на суму грн.
| SSM3K361TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
на замовлення 11951 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.86 грн |
| 11+ | 30.22 грн |
| 100+ | 19.44 грн |
| 500+ | 13.88 грн |
| 1000+ | 12.47 грн |
| RN4902FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
товару немає в наявності
В кошику
од. на суму грн.
| RN4902FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
товару немає в наявності
В кошику
од. на суму грн.
| TC35679FSG-002 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Current - Transmitting: 3.3mA
Supplier Device Package: 60-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Current - Transmitting: 3.3mA
Supplier Device Package: 60-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TC3567CFSG-002(E1C |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 128kB Flash, 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 128kB Flash, 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TC3567CFSG-002(ELG |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 128kB Flash, 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 128kB Flash, 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, PWM, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TC3567DFSG-002(E1C |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.8V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.8V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TC3567DFSG-002(ELG |
Виробник: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.8V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX BLUETOOTH QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.4835GHz
Memory Size: 51kB RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.8V
Power - Output: 0dBm
Protocol: Bluetooth v4.2
Current - Receiving: 3.3mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 3.3mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 17
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, SPI, SWD, UART, PWM
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| RN2906FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 6.20 грн |
| RN2906FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 18+ | 17.78 грн |
| 100+ | 11.18 грн |
| 500+ | 7.82 грн |
| 1000+ | 6.95 грн |
| 2000+ | 6.22 грн |
| TLP2110(TP,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 2
Current - Output / Channel: 10 mA
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 2
Current - Output / Channel: 10 mA
товару немає в наявності
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од. на суму грн.




















