Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 150 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RN1706,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA USVPower - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: USV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA |
на замовлення 8094 шт: термін постачання 21-31 дні (днів) |
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RN1703,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Supplier Device Package: USV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN1703,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Supplier Device Package: USV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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RN1709,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOHSupplier Device Package: USV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1709,LF | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOHVoltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Supplier Device Package: USV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR3UM09A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 0.9V 300MA 4-DFNProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.273V @ 300mA PSRR: 70dB (1kHz) Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 0.9V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 580 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCR3UM09A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 0.9V 300MA 4-DFNPackage / Case: 4-UDFN Exposed Pad Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.273V @ 300mA PSRR: 70dB (1kHz) Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 0.9V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 580 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed |
на замовлення 1206 шт: термін постачання 21-31 дні (днів) |
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| TLP750(D4-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(NEMIC-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-YASK,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4SHR-OT4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4MAT-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-O-TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-O-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-O,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-O-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(NEMIC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-O-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Part Status: Obsolete Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP383(BL-TPL,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP383(E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP383(D4-GB,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP383(GB,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP383(BL,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP383(TPL,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP383(D4,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DSF01S30SC,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 100MA SC2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62215AHQ,8 | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIPStep Resolution: 1, 1/2, 1/4 Motor Type - Stepper: Bipolar Supplier Device Package: 25-HZIP Voltage - Load: 10V ~ 38V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 3A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Through Hole Package / Case: 25-SIP Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB67H302HG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 8V-42V 25HZIP Motor Type - AC, DC: Brushed DC Supplier Device Package: 25-HZIP Voltage - Load: 8V ~ 42V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 8V ~ 42V Output Configuration: Half Bridge (4) Operating Temperature: -30°C ~ 85°C (TA) Interface: Parallel, PWM Current - Output: 4.5A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Through Hole Package / Case: 25-SIP Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62213AHQ,8 | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIPStep Resolution: 1, 1/2, 1/4 Motor Type - Stepper: Bipolar Supplier Device Package: 25-HZIP Voltage - Load: 10V ~ 38V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 2.4A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Through Hole Package / Case: 25-SIP Formed Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TB67S141HG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP |
товару немає в наявності |
Мінімальне замовлення: 17 шт В кошику од. на суму грн. | |||||||||||||||
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TB62213AHQ | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB62215AHQ | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Through Hole Package / Case: 25-SIP Formed Leads Packaging: Tray Step Resolution: 1, 1/2, 1/4 Motor Type - Stepper: Bipolar Supplier Device Package: 25-HZIP Voltage - Load: 10V ~ 38V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GT8G133(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: IGBT 400V 600MW 8TSSOPPower - Max: 600 mW Current - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 400 V Part Status: Obsolete Td (on/off) @ 25°C: 1.7µs/2µs Supplier Device Package: 8-TSSOP Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2103,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2103,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMResistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMResistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 6790 шт: термін постачання 21-31 дні (днів) |
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RN2103MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMResistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TJ60S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAKInput Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TJ60S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAKInput Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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TC7SZ34AFS,L3J(T | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 5.5V FSVVoltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: SOT-953 Packaging: Tape & Reel (TR) Supplier Device Package: fSV Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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HDKGB13A2A01T | Toshiba Semiconductor and Storage |
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM Packaging: Bulk Size / Dimension: 100.45mm x 69.85mm x 9.50mm Memory Size: 1TB Memory Type: Magnetic Disk (HDD) Type: SATA III Weight: 4.13 oz (117 g) Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V Form Factor: 2.5" Part Status: Active |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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TLP3823(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3A 0-100V |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SSM3K341R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 60V 6A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SSM3K341R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 60V 6A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 31795 шт: термін постачання 21-31 дні (днів) |
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| TD62783AFNG(O,S) | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18SSOP Packaging: Tube Package / Case: 18-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-SSOP Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | |||||||||||||||
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TD62783AFG,S | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18SOPPackaging: Tube Package / Case: 18-SOIC (0.276", 7.00mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-SOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TD62783APG,J,S | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18DIP Packaging: Tube Package / Case: 18-DIP (0.300", 7.62mm) Mounting Type: Through Hole Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-DIP Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||
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TD62783AFG,S,EL | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18SOPPackaging: Tube Package / Case: 18-SOIC (0.276", 7.00mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-SOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TD62783AFNG,S,EL | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVER 8/0 18SSOP Packaging: Tube Package / Case: 18-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Number of Drivers/Receivers: 8/0 Supplier Device Package: 18-SSOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TC62D722CFNG | Toshiba Semiconductor and Storage |
Description: IC LED DRVR LINEAR 90MA 24HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 17V Mounting Type: Surface Mount Number of Outputs: 16 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 90mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-HTSSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6N44FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: US6 Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| TLP781F(D4GRH-T7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TK55S10N1,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 55A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 4V @ 500µA Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TK55S10N1,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 55A DPAKInput Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 4V @ 500µA Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Qualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 8742 шт: термін постачання 21-31 дні (днів) |
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TJ60S06M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 60A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| RN1706,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: USV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: USV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
на замовлення 8094 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.61 грн |
| 32+ | 9.75 грн |
| 100+ | 6.06 грн |
| 500+ | 4.17 грн |
| 1000+ | 3.68 грн |
| RN1703,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Supplier Device Package: USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Supplier Device Package: USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN1703,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.57 грн |
| 23+ | 13.64 грн |
| 100+ | 6.67 грн |
| 500+ | 5.22 грн |
| 1000+ | 3.63 грн |
| RN1709,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.62 грн |
| RN1709,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.20 грн |
| 30+ | 10.44 грн |
| 100+ | 6.49 грн |
| 500+ | 4.47 грн |
| 1000+ | 3.94 грн |
| TCR3UM09A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 0.9V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 580 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 0.9V 300MA 4-DFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 0.9V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 580 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TCR3UM09A,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4-DFN
Package / Case: 4-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 0.9V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 580 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Description: IC REG LINEAR 0.9V 300MA 4-DFN
Package / Case: 4-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 0.9V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 580 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
на замовлення 1206 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.56 грн |
| 14+ | 22.55 грн |
| 25+ | 18.47 грн |
| 100+ | 13.01 грн |
| 250+ | 10.89 грн |
| 500+ | 9.59 грн |
| 1000+ | 8.36 грн |
| TLP750(D4-TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(NEMIC-LF2,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(D4-YASK,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(D4SHR-OT4,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(D4-TP4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(D4MAT-LF2,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(D4-O-TP4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(D4-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(D4-LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TLP750(D4-O-LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику
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| TLP750(D4-O,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
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| TLP750(D4-O-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
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| TLP750(NEMIC,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
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| TLP750(D4-O-TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
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| TLP383(BL-TPL,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
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| TLP383(E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
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| TLP383(D4-GB,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
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| TLP383(GB,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
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| TLP383(BL,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
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| TLP383(TPL,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
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| TLP383(D4,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
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| DSF01S30SC,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Description: DIODE SCHOTTKY 30V 100MA SC2
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| TB62215AHQ,8 |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 25-HZIP
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tube
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 25-HZIP
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tube
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| TB67H302HG |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 8V-42V 25HZIP
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 25-HZIP
Voltage - Load: 8V ~ 42V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 8V ~ 42V
Output Configuration: Half Bridge (4)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: Parallel, PWM
Current - Output: 4.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tube
Description: IC MOTOR DRIVER 8V-42V 25HZIP
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 25-HZIP
Voltage - Load: 8V ~ 42V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 8V ~ 42V
Output Configuration: Half Bridge (4)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: Parallel, PWM
Current - Output: 4.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tube
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| TB62213AHQ,8 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 25-HZIP
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2.4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tube
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 25-HZIP
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2.4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tube
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| TB67S141HG |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
товару немає в наявності
Мінімальне замовлення: 17 шт
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| TB62213AHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
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| TB62215AHQ |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tray
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 25-HZIP
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 3A
Description: IC MOTOR DRIVER BIPLR 25V 25HZIP
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Packaging: Tray
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 25-HZIP
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 3A
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| GT8G133(TE12L,Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT 400V 600MW 8TSSOP
Power - Max: 600 mW
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Part Status: Obsolete
Td (on/off) @ 25°C: 1.7µs/2µs
Supplier Device Package: 8-TSSOP
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IGBT 400V 600MW 8TSSOP
Power - Max: 600 mW
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Part Status: Obsolete
Td (on/off) @ 25°C: 1.7µs/2µs
Supplier Device Package: 8-TSSOP
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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| RN2103,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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Мінімальне замовлення: 3000 шт
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| RN2103,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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| RN2103MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
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| RN2103MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 6790 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.45 грн |
| 26+ | 11.89 грн |
| 100+ | 6.48 грн |
| 500+ | 3.74 грн |
| 1000+ | 2.55 грн |
| 2000+ | 2.17 грн |
| RN2103MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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| TJ60S04M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| TJ60S04M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 71 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.10 грн |
| 10+ | 77.02 грн |
| TC7SZ34AFS,L3J(T |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 5.5V FSV
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Supplier Device Package: fSV
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Description: IC BUFFER NON-INVERTING 5.5V FSV
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Supplier Device Package: fSV
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| HDKGB13A2A01T |
Виробник: Toshiba Semiconductor and Storage
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Weight: 4.13 oz (117 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
Description: HDD 1TB 2.5" SATAIII 5V 5.4K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 1TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Weight: 4.13 oz (117 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
на замовлення 22 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5335.60 грн |
| 10+ | 4655.88 грн |
| TLP3823(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Description: SSR RELAY SPST-NO 3A 0-100V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SSM3K341R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 17.19 грн |
| 6000+ | 15.24 грн |
| 9000+ | 14.58 грн |
| 15000+ | 12.98 грн |
| 21000+ | 12.56 грн |
| 30000+ | 12.16 грн |
| SSM3K341R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET NCH 60V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
на замовлення 31795 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.41 грн |
| 10+ | 42.28 грн |
| 100+ | 27.54 грн |
| 500+ | 19.89 грн |
| 1000+ | 17.97 грн |
| TD62783AFNG(O,S) |
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику
од. на суму грн.
| TD62783AFG,S |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TD62783APG,J,S |
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-DIP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-DIP
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| TD62783AFG,S,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18SOP
Packaging: Tube
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SOP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TD62783AFNG,S,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
Description: IC TRANSCEIVER 8/0 18SSOP
Packaging: Tube
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 8/0
Supplier Device Package: 18-SSOP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TC62D722CFNG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SSM6N44FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.30 грн |
| 6000+ | 3.73 грн |
| 9000+ | 3.52 грн |
| TLP781F(D4GRH-T7,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TK55S10N1,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 55A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 45.13 грн |
| TK55S10N1,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 55A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 8742 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.99 грн |
| 10+ | 96.76 грн |
| 100+ | 65.86 грн |
| 500+ | 49.31 грн |
| 1000+ | 45.30 грн |
| TJ60S06M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 42.59 грн |






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