Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13584) > Сторінка 150 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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TC7SH125FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 5-SSOP |
на замовлення 2616 шт: термін постачання 21-31 дні (днів) |
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74VHC9595FT | Toshiba Semiconductor and Storage |
Description: IC SR PUSH-PULL 8BIT 16-TSSOPBPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Supplier Device Package: 16-TSSOPB Part Status: Active Number of Bits per Element: 8 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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74VHC9595FT | Toshiba Semiconductor and Storage |
Description: IC SR PUSH-PULL 8BIT 16-TSSOPBPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Supplier Device Package: 16-TSSOPB Part Status: Active Number of Bits per Element: 8 |
на замовлення 6695 шт: термін постачання 21-31 дні (днів) |
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TB67H410NG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 4.75V-5.25V 24SDIPPackaging: Tube Package / Case: 24-SDIP (0.300", 7.62mm) Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 5A Interface: Parallel, PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 24-SDIP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 62 шт: термін постачання 21-31 дні (днів) |
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TJ20S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 20A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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TJ20S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 20A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 9718 шт: термін постачання 21-31 дні (днів) |
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TJ80S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 80A DPAK |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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TJ80S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 80A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TJ40S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 40A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TJ40S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 40A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 5818 шт: термін постачання 21-31 дні (днів) |
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TJ200F04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 200A TO220SMPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TJ200F04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 200A TO220SMPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1615 шт: термін постачання 21-31 дні (днів) |
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SSM3J64CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 1A CST3CPackaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3C Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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SSM3J64CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 1A CST3CPackaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3C Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
на замовлення 17897 шт: термін постачання 21-31 дні (днів) |
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SSM3J65CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 700MA CST3CPackaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3C Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SSM3J65CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 700MA CST3CPackaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3C Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V |
на замовлення 26774 шт: термін постачання 21-31 дні (днів) |
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| 2SD1223,L1XGQ(O | Toshiba Semiconductor and Storage |
Description: TRANSISTOR NPN DARL PWMOLDPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TCR3UG285A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.85V 300MA 4WCSPF |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCR3UG285A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.85V 300MA 4WCSPF |
на замовлення 9785 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TCR3UG28A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.8V 300MA 4WCSP-FProtection Features: Inrush Current, Over Current, Thermal Shutdown Voltage Dropout (Max): 0.327V @ 300mA PSRR: 70dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: 4-WCSP-F (0.65x0.65) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCR3UG28A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.8V 300MA 4WCSP-FProtection Features: Inrush Current, Over Current, Thermal Shutdown Voltage Dropout (Max): 0.327V @ 300mA PSRR: 70dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: 4-WCSP-F (0.65x0.65) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 4898 шт: термін постачання 21-31 дні (днів) |
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TLP185(V4GBTL,SE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRANS W/BASE 6SOPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CUHS15S30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1.5A US2HPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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CUHS15S30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1.5A US2HPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 41492 шт: термін постачання 21-31 дні (днів) |
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| TLP161G(T7TL,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP161G(T7TR,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP161G(T5TL,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP161G(TPL,U,C,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP161G(IFT7,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP161G(IFT5,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP628-2(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TK190U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=130W F=1MHZPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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TC7QPB9307FK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14-VSSOPPackaging: Tape & Reel (TR) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Dual Supply Supplier Device Package: 14-VSSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TC7QPB9307FK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 4 X 1:1 14-VSSOPPackaging: Cut Tape (CT) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Circuit: 4 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Dual Supply Supplier Device Package: 14-VSSOP |
на замовлення 2149 шт: термін постачання 21-31 дні (днів) |
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SSM3J377R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH 20V 3.9A SOT23Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SSM3J377R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH 20V 3.9A SOT23Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 14850 шт: термін постачання 21-31 дні (днів) |
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TCKE805NA,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSONPart Status: Active Supplier Device Package: 10-WSONB (3x3) Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 5A Voltage - Input: 4.4V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCKE805NA,RF | Toshiba Semiconductor and Storage |
Description: IC ELECTRONIC FUSE 10WSONCurrent - Output: 5A Voltage - Input: 4.4V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 10-WSONB (3x3) Operating Temperature: -40°C ~ 85°C (TA) |
на замовлення 2329 шт: термін постачання 21-31 дні (днів) |
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SSM3K44MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA VESMInput Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Supplier Device Package: VESM Vgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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SSM3K44MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA VESMInput Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Supplier Device Package: VESM Vgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 34766 шт: термін постачання 21-31 дні (днів) |
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TLX9376(TPL,F | Toshiba Semiconductor and Storage |
Description: OPTOISO 3750VRMS 1CH LOGIC 6SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Current - Output / Channel: 10mA Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2ns, 2ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 35ns, 35ns Grade: Automotive Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA Current - DC Forward (If) (Max): 25 mA Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLX9376(TPL,F | Toshiba Semiconductor and Storage |
Description: OPTOISO 3750VRMS 1CH LOGIC 6SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Current - Output / Channel: 10mA Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2ns, 2ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 35ns, 35ns Grade: Automotive Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA Current - DC Forward (If) (Max): 25 mA Qualification: AEC-Q101 |
на замовлення 5910 шт: термін постачання 21-31 дні (днів) |
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TCK22946G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6EPackaging: Tape & Reel (TR) Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current Supplier Device Package: 6-WCSPE (0.80x1.2) Ratio - Input:Output: 1:1 Current - Output (Max): 400mA Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.1V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 31mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-UFBGA, WLCSP Features: Load Discharge Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCK22946G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6ERatio - Input:Output: 1:1 Current - Output (Max): 400mA Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.1V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 31mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-UFBGA, WLCSP Features: Load Discharge Packaging: Cut Tape (CT) Part Status: Active Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current Supplier Device Package: 6-WCSPE (0.80x1.2) |
на замовлення 1660 шт: термін постачання 21-31 дні (днів) |
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RN1107,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RN1107,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 3806 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
| TLP512(HITACHI,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RN2117(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RN2117(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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74VHCV541FT | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 5.5V 20TSSOPPart Status: Active Supplier Device Package: 20-TSSOPB Current - Output High, Low: 16mA, 16mA Number of Bits per Element: 8 Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74VHCV541FT | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 5.5V 20TSSOPPart Status: Active Supplier Device Package: 20-TSSOPB Current - Output High, Low: 16mA, 16mA Number of Bits per Element: 8 Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 5928 шт: термін постачання 21-31 дні (днів) |
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TCK401G,LF | Toshiba Semiconductor and Storage |
Description: IC GATE DRVR HIGH-SIDE 6WCSPEPackaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPE (0.80x1.2) Rise / Fall Time (Typ): 0.2ms, 1.5µs Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Logic Voltage - VIL, VIH: 0.4V, 1.6V DigiKey Programmable: Not Verified |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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TCK401G,LF | Toshiba Semiconductor and Storage |
Description: IC GATE DRVR HIGH-SIDE 6WCSPEPackaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPE (0.80x1.2) Rise / Fall Time (Typ): 0.2ms, 1.5µs Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Logic Voltage - VIL, VIH: 0.4V, 1.6V DigiKey Programmable: Not Verified |
на замовлення 56940 шт: термін постачання 21-31 дні (днів) |
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TCK402G,LF | Toshiba Semiconductor and Storage |
Description: IC GATE DRVR LOW-SIDE 6WCSPEPackaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPE (0.80x1.2) Rise / Fall Time (Typ): 0.2ms, 1.5µs Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Logic Voltage - VIL, VIH: 0.4V, 1.6V DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCK402G,LF | Toshiba Semiconductor and Storage |
Description: IC GATE DRVR LOW-SIDE 6WCSPEPackaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPE (0.80x1.2) Rise / Fall Time (Typ): 0.2ms, 1.5µs Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Logic Voltage - VIL, VIH: 0.4V, 1.6V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TK750A60F,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 10A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V |
на замовлення 407 шт: термін постачання 21-31 дні (днів) |
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CVJ10F30,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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CVJ10F30,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV |
на замовлення 386 шт: термін постачання 21-31 дні (днів) |
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TLP2955(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER DIP8 THROUGH-HOLE Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Push-Pull, Totem Pole Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 16ns, 14ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
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TK160F10N1L,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 160A TO220SMRds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 160A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220SM(W) Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 375W (Tc) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TC7SH125FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
на замовлення 2616 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.99 грн |
| 25+ | 12.68 грн |
| 30+ | 10.32 грн |
| 100+ | 7.17 грн |
| 250+ | 5.94 грн |
| 500+ | 5.18 грн |
| 1000+ | 4.47 грн |
| 74VHC9595FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 6.39 грн |
| 5000+ | 5.95 грн |
| 74VHC9595FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
на замовлення 6695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.65 грн |
| 29+ | 10.69 грн |
| 33+ | 9.41 грн |
| 100+ | 7.55 грн |
| 250+ | 6.94 грн |
| 500+ | 6.57 грн |
| 1000+ | 6.17 грн |
| TB67H410NG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRVR 4.75V-5.25V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.27 грн |
| 20+ | 168.44 грн |
| 40+ | 159.24 грн |
| TJ20S04M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 28.50 грн |
| 4000+ | 25.37 грн |
| 6000+ | 24.32 грн |
| TJ20S04M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 9718 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.87 грн |
| 10+ | 63.15 грн |
| 100+ | 41.93 грн |
| 500+ | 30.82 грн |
| 1000+ | 28.07 грн |
| TJ80S04M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Description: MOSFET P-CH 40V 80A DPAK
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TJ80S04M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Description: MOSFET P-CH 40V 80A DPAK
товару немає в наявності
В кошику
од. на суму грн.
| TJ40S04M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 33.15 грн |
| 4000+ | 30.01 грн |
| TJ40S04M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 5818 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.25 грн |
| 10+ | 67.80 грн |
| 100+ | 48.36 грн |
| 500+ | 35.70 грн |
| 1000+ | 32.58 грн |
| TJ200F04M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 95.86 грн |
| TJ200F04M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1615 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.11 грн |
| 10+ | 176.92 грн |
| 100+ | 124.64 грн |
| 500+ | 106.00 грн |
| SSM3J64CTC,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SSM3J64CTC,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
на замовлення 17897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.34 грн |
| 18+ | 17.49 грн |
| 100+ | 11.01 грн |
| 500+ | 7.70 грн |
| 1000+ | 6.85 грн |
| 2000+ | 6.13 грн |
| 5000+ | 5.27 грн |
| SSM3J65CTC,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.27 грн |
| SSM3J65CTC,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
на замовлення 26774 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.75 грн |
| 17+ | 18.86 грн |
| 100+ | 9.50 грн |
| 500+ | 7.90 грн |
| 1000+ | 6.15 грн |
| 2000+ | 5.50 грн |
| 5000+ | 5.29 грн |
| 2SD1223,L1XGQ(O |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN DARL PWMOLD
Packaging: Tape & Reel (TR)
Description: TRANSISTOR NPN DARL PWMOLD
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TCR3UG285A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| TCR3UG285A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
на замовлення 9785 шт:
термін постачання 21-31 дні (днів)
| TCR3UG28A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCR3UG28A,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 4898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.30 грн |
| 12+ | 26.42 грн |
| 25+ | 24.19 грн |
| 100+ | 16.89 грн |
| 250+ | 15.31 грн |
| 500+ | 12.67 грн |
| 1000+ | 9.35 грн |
| 2500+ | 8.57 грн |
| TLP185(V4GBTL,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| CUHS15S30,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.06 грн |
| 6000+ | 6.52 грн |
| 9000+ | 5.86 грн |
| 30000+ | 5.42 грн |
| CUHS15S30,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 41492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.17 грн |
| 16+ | 19.55 грн |
| 100+ | 11.73 грн |
| 500+ | 10.19 грн |
| 1000+ | 6.93 грн |
| TLP161G(T7TL,U,C,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP161G(T7TR,U,C,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP161G(T5TL,U,C,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP161G(TPL,U,C,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP161G(IFT7,U,C,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP161G(IFT5,U,C,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP628-2(F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TK190U65Z,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TC7QPB9307FK(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TC7QPB9307FK(EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
на замовлення 2149 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 37.49 грн |
| 25+ | 33.69 грн |
| 100+ | 27.69 грн |
| 250+ | 25.82 грн |
| 500+ | 24.69 грн |
| 1000+ | 23.99 грн |
| SSM3J377R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.24 грн |
| 6000+ | 5.43 грн |
| 9000+ | 5.14 грн |
| SSM3J377R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
на замовлення 14850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.34 грн |
| 18+ | 17.18 грн |
| 100+ | 10.80 грн |
| 500+ | 7.54 грн |
| 1000+ | 6.70 грн |
| TCKE805NA,RF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TCKE805NA,RF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC ELECTRONIC FUSE 10WSON
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
на замовлення 2329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.22 грн |
| 10+ | 77.88 грн |
| 25+ | 70.74 грн |
| 100+ | 58.97 грн |
| 250+ | 55.44 грн |
| 500+ | 53.31 грн |
| 1000+ | 51.99 грн |
| SSM3K44MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.80 грн |
| 24000+ | 2.30 грн |
| SSM3K44MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 34766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 32+ | 9.54 грн |
| 50+ | 6.81 грн |
| 100+ | 5.55 грн |
| 500+ | 4.06 грн |
| TLX9376(TPL,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 130.47 грн |
| TLX9376(TPL,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
на замовлення 5910 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 303.69 грн |
| 10+ | 206.93 грн |
| 100+ | 169.49 грн |
| 500+ | 134.09 грн |
| 1000+ | 123.00 грн |
| TCK22946G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCK22946G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 31mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
на замовлення 1660 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 11+ | 28.40 грн |
| 100+ | 19.76 грн |
| 500+ | 14.48 грн |
| 1000+ | 11.77 грн |
| RN1107,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| RN1107,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 3806 шт:
термін постачання 21-31 дні (днів)
| RN2117(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2117(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.92 грн |
| 13+ | 24.28 грн |
| 100+ | 12.90 грн |
| 500+ | 7.97 грн |
| 1000+ | 5.42 грн |
| 74VHCV541FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 8
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 8
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 13.15 грн |
| 74VHCV541FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 8
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOPB
Current - Output High, Low: 16mA, 16mA
Number of Bits per Element: 8
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 5928 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.47 грн |
| 10+ | 34.36 грн |
| 25+ | 28.40 грн |
| 100+ | 20.29 грн |
| 250+ | 17.16 грн |
| 500+ | 15.24 грн |
| 1000+ | 13.40 грн |
| TCK401G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 17.68 грн |
| 10000+ | 16.63 грн |
| 15000+ | 16.43 грн |
| 25000+ | 15.22 грн |
| 35000+ | 15.10 грн |
| TCK401G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
на замовлення 56940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.44 грн |
| 12+ | 27.56 грн |
| 25+ | 24.65 грн |
| 100+ | 20.16 грн |
| 250+ | 18.74 грн |
| 500+ | 17.88 грн |
| 1000+ | 16.89 грн |
| 2500+ | 16.64 грн |
| TCK402G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCK402G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 6WCSPE
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPE (0.80x1.2)
Rise / Fall Time (Typ): 0.2ms, 1.5µs
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Logic Voltage - VIL, VIH: 0.4V, 1.6V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TK750A60F,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
на замовлення 407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.08 грн |
| 10+ | 77.12 грн |
| 50+ | 57.86 грн |
| 100+ | 48.46 грн |
| CVJ10F30,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CVJ10F30,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
Description: DIODE ARRAY SCHOTTKY 30V 1A UFV
на замовлення 386 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.13 грн |
| 15+ | 21.69 грн |
| 100+ | 13.48 грн |
| TLP2955(F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER DIP8 THROUGH-HOLE
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER DIP8 THROUGH-HOLE
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| TK160F10N1L,LXGQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 375W (Tc)
Description: MOSFET N-CH 100V 160A TO220SM
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 375W (Tc)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 124.72 грн |
| 3000+ | 111.08 грн |


























