Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13058) > Сторінка 149 з 218
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SSM6N951L,EFF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 12V 8A 6TCSPA Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V Supplier Device Package: 6-TCSPA (2.14x1.67) Part Status: Active |
на замовлення 9260 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPW1R104PB,L1XHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 40V 120A 8DSOP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TPW1R104PB,L1XHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 40V 120A 8DSOP |
на замовлення 14226 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TPHR7904PB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPHR7904PB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V |
на замовлення 15241 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TPWR7904PB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8DSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-DSOP Advance Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V |
товар відсутній |
||||||||||||||||
TPWR7904PB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8DSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-DSOP Advance Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V |
товар відсутній |
||||||||||||||||
SSM6N67NU,LF | Toshiba Semiconductor and Storage |
Description: SMALL LOW RON DUAL NCH MOSFETS I Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-µDFN (2x2) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
SSM6N67NU,LF | Toshiba Semiconductor and Storage |
Description: SMALL LOW RON DUAL NCH MOSFETS I Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-µDFN (2x2) Part Status: Active |
на замовлення 9820 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
SSM6N17FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: X34 SMALL LOW RON DUAL NCH MOSFE Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Supplier Device Package: US6 Part Status: Active |
товар відсутній |
||||||||||||||||
SSM6N17FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: X34 SMALL LOW RON DUAL NCH MOSFE Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Supplier Device Package: US6 Part Status: Active |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
SSM6N36TU,LF | Toshiba Semiconductor and Storage |
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active |
товар відсутній |
||||||||||||||||
SSM6N36TU,LF | Toshiba Semiconductor and Storage |
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active |
на замовлення 2859 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
SSM6N24TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.5A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: UF6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
SSM6N24TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.5A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: UF6 |
на замовлення 5700 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TRS4A65F,S1Q | Toshiba Semiconductor and Storage | Description: PB-F DIODE TO-220-2L V=650 IF=4A |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TB9052FNG(EL) | Toshiba Semiconductor and Storage |
Description: AUTOMOTIVE H-BRIDGE DRIVER Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 100mA Interface: PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 6V ~ 18V Technology: Bi-CMOS Supplier Device Package: 48-HTSSOP Motor Type - AC, DC: Brushed DC Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
||||||||||||||||
TB9052FNG(EL) | Toshiba Semiconductor and Storage |
Description: AUTOMOTIVE H-BRIDGE DRIVER Packaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 100mA Interface: PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 6V ~ 18V Technology: Bi-CMOS Supplier Device Package: 48-HTSSOP Motor Type - AC, DC: Brushed DC Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
||||||||||||||||
TC78H660FNG,EL | Toshiba Semiconductor and Storage |
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.5V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 2.5V ~ 16V Supplier Device Package: 16-TSSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TC78H660FNG,EL | Toshiba Semiconductor and Storage |
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.5V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 2.5V ~ 16V Supplier Device Package: 16-TSSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 10850 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TTC1949-GR,LF | Toshiba Semiconductor and Storage | Description: NPN TRANSISTOR VCEO50V IC0.5A HF |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TTC1949-GR,LF | Toshiba Semiconductor and Storage | Description: NPN TRANSISTOR VCEO50V IC0.5A HF |
на замовлення 5996 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TTC1949-Y,LF | Toshiba Semiconductor and Storage | Description: NPN TRANSISTOR VCEO50V IC0.5A HF |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
TTC1949-Y,LF | Toshiba Semiconductor and Storage | Description: NPN TRANSISTOR VCEO50V IC0.5A HF |
на замовлення 5995 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
RN2707,LF | Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV |
товар відсутній |
||||||||||||||||
RN2707,LF | Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: USV |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
RN1711JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ESV Part Status: Active |
товар відсутній |
||||||||||||||||
RN1711JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ESV Part Status: Active |
на замовлення 3880 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK155A65Z,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 18A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V |
товар відсутній |
||||||||||||||||
TK200F04N1L,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 200A TO220SM Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK200F04N1L,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 200A TO220SM Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK20E60W5,S1VX | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
на замовлення 785 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TK20J60W,S1VE | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TLP3123(D4,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-40V Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 1 A Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 40 V On-State Resistance (Max): 100 mOhms |
товар відсутній |
||||||||||||||||
TLP3123(D4,TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-40V Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 1 A Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 40 V On-State Resistance (Max): 100 mOhms |
товар відсутній |
||||||||||||||||
TK1K9A60F,S4X | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 3.7A TO220SIS |
товар відсутній |
||||||||||||||||
CRZ27(TE85L,Q,M) | Toshiba Semiconductor and Storage | Description: X35 PB-F DIODE S-FLAT MOQ=3000 V |
товар відсутній |
||||||||||||||||
TBAT54,LM | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 140MA SOT23-3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
2SA1588-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 30V 0.5A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 100 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
DF2B20M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 18.5VWM 30VC SL2 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 500mA (8/20µs) Voltage - Reverse Standoff (Typ): 18.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 30V Power - Peak Pulse: 15W Power Line Protection: No |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
DF2B20M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 18.5VWM 30VC SL2 Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 500mA (8/20µs) Voltage - Reverse Standoff (Typ): 18.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 30V Power - Peak Pulse: 15W Power Line Protection: No |
на замовлення 31873 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TC7SET126F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 5.5V SMV |
товар відсутній |
||||||||||||||||
TC7SET126F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 5.5V SMV |
товар відсутній |
||||||||||||||||
TLP197A(F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-60V Packaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 400 mA Supplier Device Package: 6-SOP (2.54mm) Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2 Ohms |
товар відсутній |
||||||||||||||||
TCR3UF30A,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 300MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.287V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TCR3UF30A,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 300MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.287V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 7760 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TA78L005AP(TE6,F,M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP(TORI,FM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP,6FNCF(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP,6KEHF(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP,F(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP,HOTIF(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP,SDENF(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP,T6F(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP,T6NSF(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP,T6WNF(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L005AP,WNLF(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) |
товар відсутній |
||||||||||||||||
TA78L006AP,F(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 6V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 6V Part Status: Obsolete PSRR: 47dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Current |
товар відсутній |
||||||||||||||||
TA78L006AP,T6STF(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 6V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 6V Part Status: Obsolete PSRR: 47dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Current |
товар відсутній |
||||||||||||||||
TA78L006AP,WNLF(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 6V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 6V Part Status: Obsolete PSRR: 47dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Current |
товар відсутній |
SSM6N951L,EFF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
на замовлення 9260 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.83 грн |
10+ | 49.38 грн |
100+ | 38.42 грн |
500+ | 30.56 грн |
1000+ | 24.9 грн |
2000+ | 23.44 грн |
5000+ | 21.96 грн |
TPW1R104PB,L1XHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP
Description: MOSFET N-CH 40V 120A 8DSOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)TPW1R104PB,L1XHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP
Description: MOSFET N-CH 40V 120A 8DSOP
на замовлення 14226 шт:
термін постачання 21-31 дні (днів)TPHR7904PB,L1XHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 78.45 грн |
TPHR7904PB,L1XHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
на замовлення 15241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 180.54 грн |
10+ | 144.58 грн |
100+ | 115.09 грн |
500+ | 91.39 грн |
1000+ | 77.54 грн |
2000+ | 73.67 грн |
TPWR7904PB,L1XHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
товар відсутній
TPWR7904PB,L1XHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
товар відсутній
SSM6N67NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: SMALL LOW RON DUAL NCH MOSFETS I
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
Description: SMALL LOW RON DUAL NCH MOSFETS I
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.23 грн |
SSM6N67NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: SMALL LOW RON DUAL NCH MOSFETS I
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
Description: SMALL LOW RON DUAL NCH MOSFETS I
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
на замовлення 9820 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.11 грн |
10+ | 28.1 грн |
100+ | 19.11 грн |
500+ | 13.45 грн |
1000+ | 10.09 грн |
SSM6N17FU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
товар відсутній
SSM6N17FU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.39 грн |
12+ | 25.11 грн |
SSM6N36TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
товар відсутній
SSM6N36TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
на замовлення 2859 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.44 грн |
13+ | 21.63 грн |
100+ | 14.72 грн |
500+ | 10.36 грн |
1000+ | 7.77 грн |
SSM6N24TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8 грн |
SSM6N24TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
на замовлення 5700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.61 грн |
13+ | 22.11 грн |
100+ | 13.28 грн |
500+ | 11.54 грн |
1000+ | 7.85 грн |
TRS4A65F,S1Q |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F DIODE TO-220-2L V=650 IF=4A
Description: PB-F DIODE TO-220-2L V=650 IF=4A
на замовлення 200 шт:
термін постачання 21-31 дні (днів)TB9052FNG(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TB9052FNG(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TC78H660FNG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 39.05 грн |
8000+ | 35.72 грн |
TC78H660FNG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 10850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 91.72 грн |
10+ | 79.21 грн |
25+ | 75.22 грн |
100+ | 57.98 грн |
250+ | 54.2 грн |
500+ | 47.9 грн |
1000+ | 37.19 грн |
TTC1949-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TTC1949-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
на замовлення 5996 шт:
термін постачання 21-31 дні (днів)TTC1949-Y,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TTC1949-Y,LF |
Виробник: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)RN2707,LF |
Виробник: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
товар відсутній
RN2707,LF |
Виробник: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 19.5 грн |
22+ | 12.66 грн |
100+ | 6.18 грн |
500+ | 4.83 грн |
1000+ | 3.36 грн |
RN1711JE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN1711JE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
на замовлення 3880 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.16 грн |
15+ | 19.19 грн |
100+ | 9.7 грн |
500+ | 7.43 грн |
1000+ | 5.51 грн |
2000+ | 4.64 грн |
TK155A65Z,S4X |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Description: MOSFET N-CH 650V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
товар відсутній
TK200F04N1L,LXGQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 118.11 грн |
TK200F04N1L,LXGQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 228.93 грн |
10+ | 184.71 грн |
100+ | 149.43 грн |
500+ | 124.66 грн |
TK20E60W5,S1VX |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 785 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 223.15 грн |
10+ | 180.26 грн |
100+ | 145.81 грн |
500+ | 121.63 грн |
TK20J60W,S1VE |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 339.42 грн |
10+ | 274.28 грн |
TLP3123(D4,F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-40V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 100 mOhms
Description: SSR RELAY SPST-NO 1A 0-40V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 100 mOhms
товар відсутній
TLP3123(D4,TP,F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 100 mOhms
Description: SSR RELAY SPST-NO 1A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 100 mOhms
товар відсутній
TK1K9A60F,S4X |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.7A TO220SIS
Description: MOSFET N-CH 600V 3.7A TO220SIS
товар відсутній
CRZ27(TE85L,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F DIODE S-FLAT MOQ=3000 V
Description: X35 PB-F DIODE S-FLAT MOQ=3000 V
товар відсутній
TBAT54,LM |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 140MA SOT23-3
Description: DIODE SCHOTTKY 30V 140MA SOT23-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.43 грн |
2SA1588-GR,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
Description: TRANS PNP 30V 0.5A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.98 грн |
DF2B20M4SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 18.5VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 15W
Power Line Protection: No
Description: TVS DIODE 18.5VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 15W
Power Line Protection: No
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 2.84 грн |
DF2B20M4SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 18.5VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 15W
Power Line Protection: No
Description: TVS DIODE 18.5VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 500mA (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 15W
Power Line Protection: No
на замовлення 31873 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.67 грн |
20+ | 14.53 грн |
100+ | 7.07 грн |
500+ | 5.53 грн |
1000+ | 3.84 грн |
2000+ | 3.33 грн |
5000+ | 3.04 грн |
TC7SET126F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Description: IC BUFFER NON-INVERT 5.5V SMV
товар відсутній
TC7SET126F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Description: IC BUFFER NON-INVERT 5.5V SMV
товар відсутній
TLP197A(F) |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 400 mA
Supplier Device Package: 6-SOP (2.54mm)
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 400 mA
Supplier Device Package: 6-SOP (2.54mm)
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
товар відсутній
TCR3UF30A,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.78 грн |
TCR3UF30A,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 7760 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.72 грн |
14+ | 21.35 грн |
25+ | 19.5 грн |
100+ | 13.63 грн |
250+ | 12.35 грн |
500+ | 10.22 грн |
1000+ | 7.54 грн |
TA78L005AP(TE6,F,M |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP(TORI,FM |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP,6FNCF(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP,6KEHF(M |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP,F(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP,HOTIF(M |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP,SDENF(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP,T6F(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP,T6NSF(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP,T6WNF(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L005AP,WNLF(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Description: IC REG LINEAR 5V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
товар відсутній
TA78L006AP,F(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 6V
Part Status: Obsolete
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Current
Description: IC REG LINEAR 6V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 6V
Part Status: Obsolete
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Current
товар відсутній
TA78L006AP,T6STF(M |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 6V
Part Status: Obsolete
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Current
Description: IC REG LINEAR 6V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 6V
Part Status: Obsolete
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Current
товар відсутній
TA78L006AP,WNLF(J |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 6V
Part Status: Obsolete
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Current
Description: IC REG LINEAR 6V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 6V
Part Status: Obsolete
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Current
товар відсутній