Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13587) > Сторінка 151 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SC4682,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 15V 3A TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| KIA78L12BP | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR LDO 12V DIP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
|
TLP7830(D4-LF4,E | Toshiba Semiconductor and Storage |
Description: IC OP AMP ISOLATION SO8 Packaging: Tube Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Modulator Data Interface: Serial Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V Resolution (Bits): 16 b Voltage Supply Source: Dual Supply Supplier Device Package: 8-SO Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
TODX2355(F) | Toshiba Semiconductor and Storage |
Description: TXRX MOD OPTICAL 10MBPS 650NMPackaging: Bulk Connector Type: JIS F07 Wavelength: 650nm Mounting Type: Through Hole Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Data Rate: 10Mbps |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SC3672-O(T2ASH,FM | Toshiba Semiconductor and Storage |
Description: TRANS NPN 100MA 300V SC71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TK110U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=190W F=1MHZPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TK110U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=190W F=1MHZPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
на замовлення 5927 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TK110P10PL,RQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TK110P10PL,RQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
на замовлення 5574 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| TK11S10N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 11A DPAK |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
| TK11S10N1L,LXHQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 11A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
CEZ36V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC ESC |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
CEZ36V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC ESC |
на замовлення 15621 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MSZ36V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC SMINI |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MSZ36V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC SMINI |
на замовлення 5897 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MUZ36V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC USM |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
MUZ36V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC USM |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
CUZ36V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC USC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
CUZ36V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 63VC USC |
на замовлення 1812 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| KIA78DL05PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 5V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL06PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 6V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL08PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 8V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL09PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 9V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL10PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 10V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KIA78DL15PI | Toshiba Semiconductor and Storage | Description: IC REG LINEAR LDO 15V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
7UL1T126FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
7UL1T126FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: USV |
на замовлення 4889 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
7UL1T125FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: USV |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
7UL1T125FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: USV |
на замовлення 19325 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| 7UL2G126FK,LF | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 3.6V US8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| 7UL2G126FK,LF | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 3.6V US8 |
на замовлення 5953 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
|
7UL2G125FK,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 2 Current - Output High, Low: 8mA, 8mA Supplier Device Package: US8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
7UL2G125FK,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 2 Current - Output High, Low: 8mA, 8mA Supplier Device Package: US8 |
на замовлення 5959 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM6K516NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 6A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM6K516NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 6A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V |
на замовлення 5845 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM6K518NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 6A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM6K518NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 6A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V |
на замовлення 6148 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM6K517NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 6A 6UDFNBPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM6K517NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 6A 6UDFNBPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V |
на замовлення 3456 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TB67B008FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 5.5V-22V 24WQFNPackaging: Tape & Reel (TR) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 5.5V ~ 22V Supplier Device Package: 24-WQFN (4x4) Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
|
TB67B008FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 5.5V-22V 24WQFNPackaging: Cut Tape (CT) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 5.5V ~ 22V Supplier Device Package: 24-WQFN (4x4) Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
на замовлення 338 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TB67B008FNG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 5.5V-22V 24SSOPPackaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.220", 5.60mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 5.5V ~ 22V Supplier Device Package: 24-SSOP Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
|
TB67B008FNG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 5.5V-22V 24SSOPPackaging: Cut Tape (CT) Package / Case: 24-LSSOP (0.220", 5.60mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 5.5V ~ 22V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 5.5V ~ 22V Supplier Device Package: 24-SSOP Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
на замовлення 1955 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TC7WPN3125FK,LF(CT | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH 2 X 1:1 US8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TC7WPN3125FK,LF(CT | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH 2 X 1:1 US8 |
на замовлення 5999 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM6N7002KFU,LXH | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 285mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
SSM6N7002KFU,LXH | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 285mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1725 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TK155U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=150W F=1MHZ Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
|
RN2112MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 22 kOhms |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
|
RN2112MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 22 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TOCP155K | Toshiba Semiconductor and Storage | Description: FIBER OPTIC TRANSMITTER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TOCP155K(SUMID) | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVING MODULE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
TLP3547(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 5A 0-60VPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 5 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 8-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 50 mOhms |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TLP3547(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 5A 0-60VPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 5 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 8-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 50 mOhms |
на замовлення 5944 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TLP3556A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 2A 0-100VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 2 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SMD Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 200 mOhms |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TLP3556A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 2A 0-100VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 2 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SMD Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 200 mOhms |
на замовлення 6553 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
TLP3556(TP1,F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-100VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 1 A Supplier Device Package: 4-SMD Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 700 mOhms |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
|
SSM3J15FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
на замовлення 16200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSM3J15FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
на замовлення 17595 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TPH7R006PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V Power Dissipation (Max): 81W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
| 2SC4682,T6F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
Description: TRANS NPN 15V 3A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| TLP7830(D4-LF4,E |
Виробник: Toshiba Semiconductor and Storage
Description: IC OP AMP ISOLATION SO8
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Modulator
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SO
Number of Channels: 1
Description: IC OP AMP ISOLATION SO8
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Modulator
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SO
Number of Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| TODX2355(F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1149.56 грн |
| 15+ | 835.01 грн |
| 2SC3672-O(T2ASH,FM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100MA 300V SC71
Description: TRANS NPN 100MA 300V SC71
товару немає в наявності
В кошику
од. на суму грн.
| TK110U65Z,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 137.90 грн |
| TK110U65Z,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: DTMOS VI TOLL PD=190W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
на замовлення 5927 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 391.63 грн |
| 10+ | 251.20 грн |
| 50+ | 197.27 грн |
| 100+ | 168.85 грн |
| 500+ | 152.54 грн |
| TK110P10PL,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 27.00 грн |
| 5000+ | 24.09 грн |
| TK110P10PL,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
на замовлення 5574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.36 грн |
| 10+ | 61.67 грн |
| 100+ | 40.90 грн |
| 500+ | 30.01 грн |
| 1000+ | 27.32 грн |
| TK11S10N1L,LXHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Description: MOSFET N-CH 100V 11A DPAK
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TK11S10N1L,LXHQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Description: MOSFET N-CH 100V 11A DPAK
товару немає в наявності
В кошику
од. на суму грн.
| CEZ36V,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC ESC
Description: TVS DIODE 36VWM 63VC ESC
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 3.96 грн |
| CEZ36V,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC ESC
Description: TVS DIODE 36VWM 63VC ESC
на замовлення 15621 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.11 грн |
| 15+ | 20.56 грн |
| 100+ | 10.88 грн |
| 500+ | 6.71 грн |
| 1000+ | 4.57 грн |
| 2000+ | 4.12 грн |
| MSZ36V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC SMINI
Description: TVS DIODE 36VWM 63VC SMINI
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.15 грн |
| MSZ36V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC SMINI
Description: TVS DIODE 36VWM 63VC SMINI
на замовлення 5897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.18 грн |
| 13+ | 23.22 грн |
| 100+ | 12.29 грн |
| 500+ | 7.59 грн |
| 1000+ | 5.16 грн |
| MUZ36V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USM
Description: TVS DIODE 36VWM 63VC USM
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| MUZ36V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USM
Description: TVS DIODE 36VWM 63VC USM
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| CUZ36V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USC
Description: TVS DIODE 36VWM 63VC USC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CUZ36V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 63VC USC
Description: TVS DIODE 36VWM 63VC USC
на замовлення 1812 шт:
термін постачання 21-31 дні (днів)
| KIA78DL05PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 5V TO220
Description: IC REG LINEAR LDO 5V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL06PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 6V TO220
Description: IC REG LINEAR LDO 6V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL08PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 8V TO220
Description: IC REG LINEAR LDO 8V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL09PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 9V TO220
Description: IC REG LINEAR LDO 9V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL10PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 10V TO220
Description: IC REG LINEAR LDO 10V TO220
товару немає в наявності
В кошику
од. на суму грн.
| KIA78DL15PI |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 15V TO220
Description: IC REG LINEAR LDO 15V TO220
товару немає в наявності
В кошику
од. на суму грн.
| 7UL1T126FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.87 грн |
| 7UL1T126FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
на замовлення 4889 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.75 грн |
| 44+ | 6.73 грн |
| 50+ | 5.92 грн |
| 100+ | 4.71 грн |
| 250+ | 4.30 грн |
| 500+ | 4.06 грн |
| 1000+ | 3.79 грн |
| 7UL1T125FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.87 грн |
| 6000+ | 3.61 грн |
| 9000+ | 3.54 грн |
| 15000+ | 3.26 грн |
| 7UL1T125FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: USV
на замовлення 19325 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.75 грн |
| 44+ | 6.73 грн |
| 50+ | 5.92 грн |
| 100+ | 4.71 грн |
| 250+ | 4.30 грн |
| 500+ | 4.06 грн |
| 1000+ | 3.79 грн |
| 7UL2G126FK,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V US8
Description: IC BUFFER NON-INVERT 3.6V US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| 7UL2G126FK,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V US8
Description: IC BUFFER NON-INVERT 3.6V US8
на замовлення 5953 шт:
термін постачання 21-31 дні (днів)
| 7UL2G125FK,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
Description: IC BUFFER NON-INVERT 3.6V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.09 грн |
| 7UL2G125FK,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
Description: IC BUFFER NON-INVERT 3.6V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
на замовлення 5959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.57 грн |
| 16+ | 19.45 грн |
| 25+ | 17.78 грн |
| 100+ | 12.42 грн |
| 250+ | 11.26 грн |
| 500+ | 9.32 грн |
| 1000+ | 6.87 грн |
| SSM6K516NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.30 грн |
| SSM6K516NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
на замовлення 5845 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.72 грн |
| 12+ | 25.14 грн |
| 100+ | 17.47 грн |
| 500+ | 12.80 грн |
| 1000+ | 10.41 грн |
| SSM6K518NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Description: MOSFET N-CH 20V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.30 грн |
| 6000+ | 9.41 грн |
| SSM6K518NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Description: MOSFET N-CH 20V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
на замовлення 6148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.72 грн |
| 12+ | 25.14 грн |
| 100+ | 17.47 грн |
| 500+ | 12.80 грн |
| 1000+ | 10.41 грн |
| SSM6K517NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.80 грн |
| SSM6K517NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
Description: MOSFET N-CH 30V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
на замовлення 3456 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.84 грн |
| 11+ | 27.95 грн |
| 100+ | 17.90 грн |
| 500+ | 12.73 грн |
| 1000+ | 11.42 грн |
| TB67B008FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TB67B008FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 5.5V-22V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 338 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.53 грн |
| 10+ | 99.61 грн |
| 25+ | 90.69 грн |
| 100+ | 75.91 грн |
| 250+ | 71.52 грн |
| TB67B008FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TB67B008FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 22V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 22V
Supplier Device Package: 24-SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.81 грн |
| 10+ | 109.37 грн |
| 25+ | 99.74 грн |
| 100+ | 83.70 грн |
| 250+ | 78.97 грн |
| 500+ | 76.59 грн |
| TC7WPN3125FK,LF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
Description: IC BUS SWITCH 2 X 1:1 US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.04 грн |
| TC7WPN3125FK,LF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
Description: IC BUS SWITCH 2 X 1:1 US8
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.09 грн |
| 12+ | 26.25 грн |
| 25+ | 23.66 грн |
| 100+ | 15.35 грн |
| 250+ | 12.92 грн |
| 500+ | 10.50 грн |
| 1000+ | 7.94 грн |
| SSM6N7002KFU,LXH |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6N7002KFU,LXH |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.72 грн |
| 17+ | 18.26 грн |
| 50+ | 13.15 грн |
| 100+ | 10.78 грн |
| 500+ | 8.03 грн |
| TK155U65Z,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=150W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Description: DTMOS VI TOLL PD=150W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| RN2112MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN2112MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 22 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| TOCP155K |
Виробник: Toshiba Semiconductor and Storage
Description: FIBER OPTIC TRANSMITTER
Description: FIBER OPTIC TRANSMITTER
товару немає в наявності
В кошику
од. на суму грн.
| TLP3547(TP1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 394.60 грн |
| TLP3547(TP1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
на замовлення 5944 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 570.56 грн |
| 10+ | 489.16 грн |
| 25+ | 467.14 грн |
| 50+ | 423.34 грн |
| 100+ | 408.81 грн |
| 250+ | 390.36 грн |
| 500+ | 370.76 грн |
| TLP3556A(TP1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 168.47 грн |
| 3000+ | 156.65 грн |
| TLP3556A(TP1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
на замовлення 6553 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.43 грн |
| 10+ | 208.75 грн |
| 25+ | 199.39 грн |
| 50+ | 180.71 грн |
| 100+ | 174.51 грн |
| 250+ | 166.64 грн |
| 500+ | 158.28 грн |
| TLP3556(TP1,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 700 mOhms
Description: SSR RELAY SPST-NO 1A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 700 mOhms
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| SSM3J15FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: MOSFET P-CH 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
на замовлення 16200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.17 грн |
| 6000+ | 2.73 грн |
| 9000+ | 2.57 грн |
| 15000+ | 2.24 грн |
| SSM3J15FS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: MOSFET P-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
на замовлення 17595 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.36 грн |
| 32+ | 9.24 грн |
| 100+ | 5.75 грн |
| 500+ | 3.94 грн |
| 1000+ | 3.47 грн |
| TPH7R006PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 22.97 грн |
| 15000+ | 19.83 грн |























