Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 148 з 226
| Фото | Назва | Виробник | Інформація |
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TJ8S06M3L,LXHQ | Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 60V 8A DPAKOperating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TJ10S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 10A DPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 3780 шт: термін постачання 21-31 дні (днів) |
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TJ10S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 10A DPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 3780 шт: термін постачання 21-31 дні (днів) |
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CUHS15F30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1.5A US2H Current - Reverse Leakage @ Vr: 50 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C Supplier Device Package: US2H Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 170pF @ 0V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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CUHS15F30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1.5A US2H Current - Reverse Leakage @ Vr: 50 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C Supplier Device Package: US2H Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 170pF @ 0V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
на замовлення 8650 шт: термін постачання 21-31 дні (днів) |
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XPW6R30ANB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 45A 8DSOP Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-DSOP Advance Vgs(th) (Max) @ Id: 3.5V @ 500µA Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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XPW6R30ANB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 45A 8DSOP Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-DSOP Advance Vgs(th) (Max) @ Id: 3.5V @ 500µA Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 5312 шт: термін постачання 21-31 дні (днів) |
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XPH6R30ANB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 45A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 3.5V @ 500µA Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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XPH6R30ANB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 45A 8SOP Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 3.5V @ 500µA Power Dissipation (Max): 960mW (Ta), 132W (Tc) |
на замовлення 8924 шт: термін постачання 21-31 дні (днів) |
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TK40S06N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 40A DPAK Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 88.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK40S06N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 40A DPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 6736 шт: термін постачання 21-31 дні (днів) |
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| 2SC5886A,L1XHQ(O | Toshiba Semiconductor and Storage |
Description: TRANSISTOR NPN BIPO PWMOLD Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TPCC8105,L1Q(CM | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 23A 8TSON Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLP2761(D4-LF4,E | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLP2761(D4-TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV 6-SO Current - Output / Channel: 10 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 3ns, 3ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 10mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 15MBd Voltage - Forward (Vf) (Typ): 1.5V Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP2761(LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV 6-SO Current - Output / Channel: 10 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 3ns, 3ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 10mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 15MBd Voltage - Forward (Vf) (Typ): 1.5V Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP2761(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV 6-SO Data Rate: 15MBd Voltage - Forward (Vf) (Typ): 1.5V Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Current - Output / Channel: 10 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 3ns, 3ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 10mA Voltage - Isolation: 5000Vrms Input Type: DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCR2LE31,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.1V 200MA ESV |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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TCR2LE31,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.1V 200MA ESV |
на замовлення 5941 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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XPN12006NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 20A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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XPN12006NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 20A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 9372 шт: термін постачання 21-31 дні (днів) |
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| TLP750F(D4-TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CUHS15S40,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1.5A US2H Operating Temperature - Junction: 150°C (Max) Supplier Device Package: US2H Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 170pF @ 0V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A Voltage - DC Reverse (Vr) (Max): 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHS15S40,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1.5A US2H Current - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: US2H Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 170pF @ 0V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
на замовлення 5741 шт: термін постачання 21-31 дні (днів) |
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TC7WU04FK,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 3CH 3-INP 8SSOP Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 3 Supplier Device Package: 8-SSOP Input Logic Level - High: 1.7V ~ 4.8V Input Logic Level - Low: 0.3V ~ 1.2V Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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CLS10F40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A CL2E Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: CL2E Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 40 V |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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CLS10F40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A CL2E Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: CL2E Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 40 V |
на замовлення 93264 шт: термін постачання 21-31 дні (днів) |
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74VHC20FT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 2CH 4-INP 14TSSOPB Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 4 Supplier Device Package: 14-TSSOPB Input Logic Level - High: 2V ~ 4.5V Input Logic Level - Low: 0.1V ~ 36V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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74VHC20FT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 2CH 4-INP 14TSSOPB Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 4 Supplier Device Package: 14-TSSOPB Input Logic Level - High: 2V ~ 4.5V Input Logic Level - Low: 0.1V ~ 36V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 29078 шт: термін постачання 21-31 дні (днів) |
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TCR2EF19,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.9V 200MA SMV Protection Features: Over Current Voltage Dropout (Max): 0.31V @ 150mA PSRR: 73dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 1.9V Supplier Device Package: SMV Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TCR2EF19,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.9V 200MA SMV Protection Features: Over Current Voltage Dropout (Max): 0.31V @ 150mA PSRR: 73dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 1.9V Supplier Device Package: SMV Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 1526 шт: термін постачання 21-31 дні (днів) |
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SSM6P47NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A 6DFN Supplier Device Package: 6-µDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM6P47NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A 6DFN Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) Supplier Device Package: 6-µDFN (2x2) |
на замовлення 1903 шт: термін постачання 21-31 дні (днів) |
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TC7WP3125FK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 2 X 1:1 US8 Supplier Device Package: 8-SSOP Current - Output High, Low: 12mA, 12mA Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC7WP3125FK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 2 X 1:1 US8 Supplier Device Package: 8-SSOP Current - Output High, Low: 12mA, 12mA Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 5361 шт: термін постачання 21-31 дні (днів) |
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TLP785F(GB-LF7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4TEET7F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(YH-TP7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 75% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(GB,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4Y-T7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(Y,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(GR-LF7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(GRH,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 150% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Rise / Fall Time (Typ): 2µs, 3µs Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(GRH-T7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 150% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tape & Reel (TR) Voltage - Output (Max): 80V Supplier Device Package: 4-DIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4-GB,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(GR-TP7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4Y-F7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4-TP7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4B-F7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Current Transfer Ratio (Min): 50% @ 5mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4GRF7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Input Type: DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4B-T7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tape & Reel (TR) Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(LF7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4YHF7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 75% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Packaging: Tube Turn On / Turn Off Time (Typ): 3µs, 3µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(YH,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 75% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 150% @ 5mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(BLL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 400% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4-GR,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4GHT7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4GBT7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP785F(D4BLF7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube Supplier Device Package: 4-SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| TJ8S06M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 8A DPAK
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 60V 8A DPAK
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику
од. на суму грн.
| TJ10S04M3L,LXHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 3780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 26.78 грн |
| TJ10S04M3L,LXHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 3780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.90 грн |
| 10+ | 59.96 грн |
| 100+ | 39.66 грн |
| 500+ | 29.04 грн |
| 1000+ | 26.41 грн |
| CUHS15F30,H3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1.5A US2H
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.04 грн |
| 6000+ | 5.56 грн |
| CUHS15F30,H3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 1.5A US2H
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
на замовлення 8650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.23 грн |
| 14+ | 22.63 грн |
| 100+ | 11.42 грн |
| 500+ | 8.75 грн |
| 1000+ | 6.49 грн |
| XPW6R30ANB,L1XHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 45A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 60.24 грн |
| XPW6R30ANB,L1XHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 45A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 5312 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 198.58 грн |
| 10+ | 123.42 грн |
| 100+ | 84.80 грн |
| 500+ | 64.09 грн |
| 1000+ | 59.11 грн |
| 2000+ | 54.92 грн |
| XPH6R30ANB,L1XHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 45A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| XPH6R30ANB,L1XHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8SOP
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Description: MOSFET N-CH 100V 45A 8SOP
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
на замовлення 8924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 188.30 грн |
| 10+ | 116.72 грн |
| 100+ | 79.99 грн |
| 500+ | 60.30 грн |
| 1000+ | 55.56 грн |
| 2000+ | 51.57 грн |
| TK40S06N1L,LXHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 40A DPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 30.10 грн |
| 4000+ | 26.85 грн |
| TK40S06N1L,LXHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 6736 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 86.24 грн |
| 10+ | 57.44 грн |
| 100+ | 44.71 грн |
| 500+ | 33.42 грн |
| 1000+ | 30.50 грн |
| 2SC5886A,L1XHQ(O |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN BIPO PWMOLD
Packaging: Tape & Reel (TR)
Description: TRANSISTOR NPN BIPO PWMOLD
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TPCC8105,L1Q(CM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 23A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 23A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TLP2761(D4-LF4,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Description: OPTOCOUPLER TRANS
товару немає в наявності
В кошику
од. на суму грн.
| TLP2761(D4-TP4,E |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISOLTR 5KV 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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| TLP2761(LF4,E |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Description: OPTOISOLTR 5KV 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
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| TLP2761(TP4,E |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 6-SO
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Description: OPTOISOLTR 5KV 6-SO
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
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В кошику
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| TCR2LE31,LM |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA ESV
Description: IC REG LINEAR 3.1V 200MA ESV
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TCR2LE31,LM |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA ESV
Description: IC REG LINEAR 3.1V 200MA ESV
на замовлення 5941 шт:
термін постачання 21-31 дні (днів)
| XPN12006NC,L1XHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 32.38 грн |
| XPN12006NC,L1XHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
на замовлення 9372 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 125.79 грн |
| 10+ | 64.76 грн |
| 100+ | 45.73 грн |
| 500+ | 37.03 грн |
| 1000+ | 32.25 грн |
| 2000+ | 32.01 грн |
| TLP750F(D4-TP4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
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В кошику
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| CUHS15S40,H3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Description: DIODE SCHOTTKY 40V 1.5A US2H
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.04 грн |
| CUHS15S40,H3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 1.5A US2H
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
на замовлення 5741 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.23 грн |
| 14+ | 22.63 грн |
| 100+ | 11.42 грн |
| 500+ | 8.75 грн |
| 1000+ | 6.49 грн |
| TC7WU04FK,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 7.03 грн |
| 6000+ | 6.56 грн |
| 9000+ | 6.46 грн |
| 15000+ | 5.95 грн |
| CLS10F40,L3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 8.36 грн |
| 20000+ | 7.31 грн |
| CLS10F40,L3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
на замовлення 93264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.23 грн |
| 15+ | 21.48 грн |
| 100+ | 16.10 грн |
| 500+ | 11.51 грн |
| 1000+ | 9.43 грн |
| 2000+ | 8.87 грн |
| 5000+ | 8.17 грн |
| 74VHC20FT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 4-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 4
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 2CH 4-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 4
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 7.03 грн |
| 5000+ | 6.39 грн |
| 12500+ | 5.83 грн |
| 25000+ | 5.12 грн |
| 74VHC20FT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 4-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 4
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 2CH 4-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 4
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 29078 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 14+ | 22.93 грн |
| 25+ | 20.69 грн |
| 100+ | 13.41 грн |
| 250+ | 11.29 грн |
| 500+ | 9.17 грн |
| 1000+ | 6.94 грн |
| TCR2EF19,LM(CT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.9V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1.9V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.9V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCR2EF19,LM(CT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.9V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 1.9V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.9V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 1526 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 26.11 грн |
| 21+ | 14.78 грн |
| 26+ | 12.04 грн |
| 100+ | 8.39 грн |
| 250+ | 6.97 грн |
| 500+ | 6.09 грн |
| 1000+ | 5.26 грн |
| SSM6P47NU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Supplier Device Package: 6-µDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 4A 6DFN
Supplier Device Package: 6-µDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6P47NU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-µDFN (2x2)
Description: MOSFET 2P-CH 20V 4A 6DFN
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-µDFN (2x2)
на замовлення 1903 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.26 грн |
| 11+ | 28.95 грн |
| 100+ | 18.54 грн |
| 500+ | 13.20 грн |
| 1000+ | 11.84 грн |
| TC7WP3125FK,LF(CT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
Supplier Device Package: 8-SSOP
Current - Output High, Low: 12mA, 12mA
Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUS SWITCH 2 X 1:1 US8
Supplier Device Package: 8-SSOP
Current - Output High, Low: 12mA, 12mA
Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.23 грн |
| TC7WP3125FK,LF(CT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
Supplier Device Package: 8-SSOP
Current - Output High, Low: 12mA, 12mA
Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUS SWITCH 2 X 1:1 US8
Supplier Device Package: 8-SSOP
Current - Output High, Low: 12mA, 12mA
Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 5361 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.44 грн |
| 13+ | 23.54 грн |
| 25+ | 21.24 грн |
| 100+ | 13.76 грн |
| 250+ | 11.59 грн |
| 500+ | 9.42 грн |
| 1000+ | 7.13 грн |
| TLP785F(GB-LF7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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В кошику
од. на суму грн.
| TLP785F(D4,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
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В кошику
од. на суму грн.
| TLP785F(D4TEET7F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| TLP785F(YH-TP7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| TLP785F(GB,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
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В кошику
од. на суму грн.
| TLP785F(D4Y-T7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| TLP785F(Y,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
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В кошику
од. на суму грн.
| TLP785F(GR-LF7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
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В кошику
од. на суму грн.
| TLP785F(GRH,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Rise / Fall Time (Typ): 2µs, 3µs
Packaging: Tube
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Rise / Fall Time (Typ): 2µs, 3µs
Packaging: Tube
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В кошику
од. на суму грн.
| TLP785F(GRH-T7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
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од. на суму грн.
| TLP785F(D4-GB,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
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В кошику
од. на суму грн.
| TLP785F(GR-TP7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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| TLP785F(D4Y-F7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
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| TLP785F(D4-TP7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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| TLP785F(D4B-F7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current Transfer Ratio (Min): 50% @ 5mA
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current Transfer Ratio (Min): 50% @ 5mA
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| TLP785F(D4GRF7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Input Type: DC
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Input Type: DC
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| TLP785F(D4B-T7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Current - DC Forward (If) (Max): 60 mA
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| TLP785F(LF7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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| TLP785F(D4YHF7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Packaging: Tube
Turn On / Turn Off Time (Typ): 3µs, 3µs
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Packaging: Tube
Turn On / Turn Off Time (Typ): 3µs, 3µs
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| TLP785F(YH,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Description: PHOTOCOUPLER TRANS OUT
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
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| TLP785F(BLL,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
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| TLP785F(D4-GR,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
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| TLP785F(D4GHT7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
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од. на суму грн.
| TLP785F(D4GBT7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
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| TLP785F(D4BLF7,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Supplier Device Package: 4-SMD
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Supplier Device Package: 4-SMD
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