Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13062) > Сторінка 169 з 218
Фото | Назва | Виробник | Інформація |
Доступність |
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HN1A01FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Part Status: Active |
на замовлення 7702 шт: термін постачання 21-31 дні (днів) |
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TPH2R408QM,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 120A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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TPH2R408QM,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 120A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V |
на замовлення 30118 шт: термін постачання 21-31 дні (днів) |
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TPH3R704PC,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 82A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V Power Dissipation (Max): 830mW (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TPH3R704PC,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 82A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V Power Dissipation (Max): 830mW (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 300µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V |
на замовлення 5155 шт: термін постачання 21-31 дні (днів) |
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RN1911FE,LF(CT | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ES6 Part Status: Active |
товар відсутній |
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RN1911FE,LF(CT | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ES6 Part Status: Active |
на замовлення 3980 шт: термін постачання 21-31 дні (днів) |
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TCR3UG50B,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 300MA 4WCSP-F Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP-F (0.65x0.65) Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.195V @ 300mA Protection Features: Inrush Current, Over Current, Thermal Shutdown |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR3UG50B,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 300MA 4WCSP-F Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP-F (0.65x0.65) Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.195V @ 300mA Protection Features: Inrush Current, Over Current, Thermal Shutdown |
на замовлення 8709 шт: термін постачання 21-31 дні (днів) |
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RN2102MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN2102MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 15720 шт: термін постачання 21-31 дні (днів) |
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RN2132MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 50V 0.1A VESM |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN2132MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 50V 0.1A VESM |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1132MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A VESM |
товар відсутній |
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7UL1T00FU,LF | Toshiba Semiconductor and Storage |
Description: LOGIC, 2-INPUT/NAND WITH LEVEL S Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: USV Input Logic Level - High: 0.1V ~ 0.4V Input Logic Level - Low: 2V ~ 2.48V Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1T00FU,LF | Toshiba Semiconductor and Storage |
Description: LOGIC, 2-INPUT/NAND WITH LEVEL S Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: USV Input Logic Level - High: 0.1V ~ 0.4V Input Logic Level - Low: 2V ~ 2.48V Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 5980 шт: термін постачання 21-31 дні (днів) |
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TLP598GAF | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 150MA 0-400V Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 150 mA Supplier Device Package: 6-DIP Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 12 Ohms |
товар відсутній |
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TLP223GA(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 120MA 0-400V Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 120 mA Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 35 Ohms |
товар відсутній |
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TLP223GA(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 120MA 0-400V Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 120 mA Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 35 Ohms |
на замовлення 1027 шт: термін постачання 21-31 дні (днів) |
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TLP223J(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 90MA 0-600V Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 90 mA Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 600 V On-State Resistance (Max): 60 Ohms |
товар відсутній |
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TLP223J(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 90MA 0-600V Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 90 mA Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 600 V On-State Resistance (Max): 60 Ohms |
на замовлення 1345 шт: термін постачання 21-31 дні (днів) |
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MSZ24V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: S-Mini Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MSZ24V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: S-Mini Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 5935 шт: термін постачання 21-31 дні (днів) |
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CUZ24V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUZ24V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 6787 шт: термін постачання 21-31 дні (днів) |
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CEZ24V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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CEZ24V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: ESC Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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MUZ24V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: USM Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MUZ24V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: USM Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 6002 шт: термін постачання 21-31 дні (днів) |
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CUHZ24V,H3F | Toshiba Semiconductor and Storage |
Description: 24 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 25.5V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active |
товар відсутній |
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CUHZ24V,H3F | Toshiba Semiconductor and Storage |
Description: 24 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 25.5V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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TPCA8109(TE12L1,V | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 30V 24A 8SOP |
товар відсутній |
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TLP293(GB,E | Toshiba Semiconductor and Storage |
Description: X36 PB-F TRANSISTOR OPTOCOUPLER Packaging: Bulk Package / Case: 6-SMD (4 Leads), Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-MFSOP, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 525 шт: термін постачання 21-31 дні (днів) |
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TCR2LN30,LSF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.0V I=200MA Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
товар відсутній |
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TCR2LN30,LSF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.0V I=200MA Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 9500 шт: термін постачання 21-31 дні (днів) |
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TCR2EN30,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.0V IOUT=200MA Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2EN30,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.0V IOUT=200MA Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
на замовлення 19950 шт: термін постачання 21-31 дні (днів) |
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TCR2LN30,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.0V I=200MA Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN30,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.0V I=200MA Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 19990 шт: термін постачання 21-31 дні (днів) |
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SSM3K376R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON NCH ID: 4A VDSS: 30 Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSM3K376R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON NCH ID: 4A VDSS: 30 Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 11523 шт: термін постачання 21-31 дні (днів) |
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TB62216FTG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 48-QFN (7x7) Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TB62216FTG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 48-QFN (7x7) Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 3859 шт: термін постачання 21-31 дні (днів) |
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TB67S128FTG(O,EL) | Toshiba Semiconductor and Storage | Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67S128FTG(O,EL) | Toshiba Semiconductor and Storage | Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN |
на замовлення 7396 шт: термін постачання 21-31 дні (днів) |
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TPCA8128,L1Q | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 30V 34A 8SOP |
товар відсутній |
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DF2B6M4BSL,L3F | Toshiba Semiconductor and Storage |
Description: UNI-DIR ESD PR DI SOD-962 V(ESD) Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
товар відсутній |
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DF2B6M4BSL,L3F | Toshiba Semiconductor and Storage |
Description: UNI-DIR ESD PR DI SOD-962 V(ESD) Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 6569 шт: термін постачання 21-31 дні (днів) |
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TC7SZ05FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOP Features: Open Drain Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Current - Output High, Low: -, 32mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товар відсутній |
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TCR3DM135,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUT Packaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.35V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.52V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM135,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUT Packaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.35V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.52V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 19975 шт: термін постачання 21-31 дні (днів) |
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TK16J60W5,S1VQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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TK16J60W,S1VE | Toshiba Semiconductor and Storage | Description: X35 PB-F POWER MOSFET TRANSISTOR |
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TB9101FNG,EL | Toshiba Semiconductor and Storage | Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC |
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TB9101FNG,EL | Toshiba Semiconductor and Storage | Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC |
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TCR5AM33,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 3.3V 500MA 5DFNB |
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TCR5AM33,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 3.3V 500MA 5DFNB |
на замовлення 629 шт: термін постачання 21-31 дні (днів) |
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TCR5AM105A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.05V 500MA 5DFNB |
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TCR5AM105A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.05V 500MA 5DFNB |
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TCR5AM18,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.8V 500MA 5DFNB |
товар відсутній |
HN1A01FE-GR,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
на замовлення 7702 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.33 грн |
11+ | 26.71 грн |
100+ | 19.96 грн |
500+ | 14.71 грн |
1000+ | 11.37 грн |
2000+ | 10.37 грн |
TPH2R408QM,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 45.99 грн |
10000+ | 44.14 грн |
TPH2R408QM,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
на замовлення 30118 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.35 грн |
10+ | 84.83 грн |
100+ | 67.48 грн |
500+ | 53.58 грн |
1000+ | 45.46 грн |
2000+ | 43.19 грн |
TPH3R704PC,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 82A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Description: MOSFET N-CH 40V 82A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 25.38 грн |
TPH3R704PC,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 82A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Description: MOSFET N-CH 40V 82A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
на замовлення 5155 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.08 грн |
10+ | 48.3 грн |
100+ | 37.6 грн |
500+ | 29.91 грн |
1000+ | 24.36 грн |
RN1911FE,LF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
товар відсутній
RN1911FE,LF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 15.81 грн |
27+ | 10.38 грн |
100+ | 5.04 грн |
500+ | 3.95 грн |
1000+ | 2.74 грн |
2000+ | 2.38 грн |
TCR3UG50B,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.195V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.195V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 8.1 грн |
TCR3UG50B,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.195V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.195V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
на замовлення 8709 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.18 грн |
12+ | 23.66 грн |
25+ | 21.64 грн |
100+ | 15.12 грн |
250+ | 13.7 грн |
500+ | 11.34 грн |
1000+ | 8.36 грн |
2500+ | 7.67 грн |
RN2102MFV,L3F(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 1.94 грн |
RN2102MFV,L3F(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 15720 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.5 грн |
34+ | 8.16 грн |
100+ | 4.38 грн |
500+ | 3.22 грн |
1000+ | 2.24 грн |
2000+ | 1.86 грн |
RN2132MFV,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Description: TRANS PREBIAS PNP 50V 0.1A VESM
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)RN2132MFV,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Description: TRANS PREBIAS PNP 50V 0.1A VESM
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)RN1132MFV,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
товар відсутній
7UL1T00FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: LOGIC, 2-INPUT/NAND WITH LEVEL S
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: LOGIC, 2-INPUT/NAND WITH LEVEL S
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.48 грн |
7UL1T00FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: LOGIC, 2-INPUT/NAND WITH LEVEL S
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: LOGIC, 2-INPUT/NAND WITH LEVEL S
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.46 грн |
14+ | 21.1 грн |
25+ | 18.46 грн |
100+ | 11.21 грн |
250+ | 9.28 грн |
500+ | 7.42 грн |
1000+ | 5.6 грн |
TLP598GAF |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 150MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 150 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 12 Ohms
Description: SSR RELAY SPST-NO 150MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 150 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 12 Ohms
товар відсутній
TLP223GA(D4TP1,F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
товар відсутній
TLP223GA(D4TP1,F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
на замовлення 1027 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 119.28 грн |
10+ | 107.87 грн |
25+ | 95.9 грн |
50+ | 85.51 грн |
100+ | 81 грн |
250+ | 72 грн |
500+ | 66.39 грн |
TLP223J(D4TP1,F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 90 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 90 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
товар відсутній
TLP223J(D4TP1,F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 90 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 90 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
на замовлення 1345 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 119.28 грн |
10+ | 107.87 грн |
25+ | 95.9 грн |
50+ | 85.51 грн |
100+ | 81 грн |
250+ | 72 грн |
500+ | 66.39 грн |
MSZ24V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 36.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.01 грн |
MSZ24V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 36.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.71 грн |
18+ | 15.78 грн |
100+ | 7.69 грн |
500+ | 6.02 грн |
1000+ | 4.18 грн |
CUZ24V,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 36.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.81 грн |
CUZ24V,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 36.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 6787 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.28 грн |
19+ | 15.02 грн |
100+ | 7.31 грн |
500+ | 5.72 грн |
1000+ | 3.98 грн |
CEZ24V,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 36.5VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 3.42 грн |
CEZ24V,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 36.5VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.28 грн |
20+ | 14.46 грн |
100+ | 7.07 грн |
500+ | 5.54 грн |
1000+ | 3.85 грн |
2000+ | 3.33 грн |
MUZ24V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 36.5VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.17 грн |
6000+ | 3.72 грн |
MUZ24V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 36.5VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 6002 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.43 грн |
17+ | 16.4 грн |
100+ | 7.99 грн |
500+ | 6.26 грн |
1000+ | 4.35 грн |
CUHZ24V,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: 24 V ZENER DIODE, SOD-323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
Description: 24 V ZENER DIODE, SOD-323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
товар відсутній
CUHZ24V,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: 24 V ZENER DIODE, SOD-323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
Description: 24 V ZENER DIODE, SOD-323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.15 грн |
15+ | 18.89 грн |
100+ | 11.32 грн |
500+ | 9.84 грн |
1000+ | 6.69 грн |
TPCA8109(TE12L1,V |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 24A 8SOP
Description: MOSFET P-CH 30V 24A 8SOP
товар відсутній
TLP293(GB,E |
Виробник: Toshiba Semiconductor and Storage
Description: X36 PB-F TRANSISTOR OPTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: X36 PB-F TRANSISTOR OPTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 525 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.77 грн |
14+ | 21.24 грн |
175+ | 14.07 грн |
TCR2LN30,LSF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.0V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.0V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2LN30,LSF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.0V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.0V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 9500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.15 грн |
16+ | 18.06 грн |
25+ | 16.33 грн |
100+ | 10.58 грн |
250+ | 8.91 грн |
500+ | 7.24 грн |
1000+ | 5.48 грн |
2500+ | 4.93 грн |
5000+ | 4.66 грн |
TCR2EN30,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.0V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.0V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 4.78 грн |
TCR2EN30,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.0V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.0V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
на замовлення 19950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.15 грн |
16+ | 18.06 грн |
25+ | 16.33 грн |
100+ | 10.58 грн |
250+ | 8.91 грн |
500+ | 7.24 грн |
1000+ | 5.48 грн |
2500+ | 4.93 грн |
5000+ | 4.66 грн |
TCR2LN30,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.0V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.0V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 4.78 грн |
TCR2LN30,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.0V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.0V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 19990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.15 грн |
16+ | 18.06 грн |
25+ | 16.33 грн |
100+ | 10.58 грн |
250+ | 8.91 грн |
500+ | 7.24 грн |
1000+ | 5.48 грн |
2500+ | 4.93 грн |
5000+ | 4.66 грн |
SSM3K376R,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.91 грн |
6000+ | 6.38 грн |
9000+ | 5.74 грн |
SSM3K376R,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
на замовлення 11523 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.87 грн |
15+ | 19.1 грн |
100+ | 11.49 грн |
500+ | 9.98 грн |
1000+ | 6.79 грн |
TB62216FTG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 80.93 грн |
TB62216FTG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 3859 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 171.73 грн |
10+ | 148.49 грн |
25+ | 140.1 грн |
100+ | 112.03 грн |
250+ | 105.2 грн |
500+ | 92.05 грн |
1000+ | 75.02 грн |
TB67S128FTG(O,EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 317.48 грн |
TB67S128FTG(O,EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
на замовлення 7396 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 526.7 грн |
10+ | 458.27 грн |
25+ | 436.92 грн |
100+ | 356.03 грн |
250+ | 340.03 грн |
500+ | 310.03 грн |
1000+ | 278.41 грн |
TPCA8128,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 34A 8SOP
Description: MOSFET P-CH 30V 34A 8SOP
товар відсутній
DF2B6M4BSL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: UNI-DIR ESD PR DI SOD-962 V(ESD)
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: UNI-DIR ESD PR DI SOD-962 V(ESD)
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
DF2B6M4BSL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: UNI-DIR ESD PR DI SOD-962 V(ESD)
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: UNI-DIR ESD PR DI SOD-962 V(ESD)
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 6569 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.43 грн |
17+ | 16.47 грн |
100+ | 8.34 грн |
500+ | 6.38 грн |
1000+ | 4.74 грн |
2000+ | 3.98 грн |
5000+ | 3.75 грн |
TC7SZ05FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
TCR3DM135,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 6 грн |
TCR3DM135,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 19975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.62 грн |
13+ | 22.76 грн |
25+ | 20.54 грн |
100+ | 13.31 грн |
250+ | 11.2 грн |
500+ | 9.1 грн |
1000+ | 6.89 грн |
2500+ | 6.2 грн |
5000+ | 5.85 грн |
TK16J60W5,S1VQ |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 373.65 грн |
10+ | 323.34 грн |
TK16J60W,S1VE |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Description: X35 PB-F POWER MOSFET TRANSISTOR
товар відсутній
TB9101FNG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
товар відсутній
TB9101FNG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
товар відсутній
TCR5AM33,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
Description: IC REG LINEAR 3.3V 500MA 5DFNB
товар відсутній
TCR5AM33,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
Description: IC REG LINEAR 3.3V 500MA 5DFNB
на замовлення 629 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.77 грн |
11+ | 26.57 грн |
25+ | 24.36 грн |
100+ | 17 грн |
250+ | 15.41 грн |
500+ | 12.75 грн |
TCR5AM105A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Description: IC REG LINEAR 1.05V 500MA 5DFNB
товар відсутній
TCR5AM105A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Description: IC REG LINEAR 1.05V 500MA 5DFNB
товар відсутній
TCR5AM18,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 5DFNB
Description: IC REG LINEAR 1.8V 500MA 5DFNB
товар відсутній