Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13583) > Сторінка 165 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TCR3DF39,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.9V 300MA SMV |
на замовлення 5592 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TCR2EN11,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.1V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCR2EN11,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.1V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCR2EN115,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.5V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCR2EN115,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.5V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| CLS01(T6LSONY,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 10A L-FLAT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
RN2418,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2418,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2416,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2416,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK1R4F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A TO220SMPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK1R4F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A TO220SMPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CUHZ8V2,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8.2VWM 8.5VC US2HPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 450pF @ 1MHz Current - Peak Pulse (10/1000µs): 68A (8/20µs) Voltage - Reverse Standoff (Typ): 8.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Power - Peak Pulse: 1900W (1.9kW) Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CUHZ8V2,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8.2VWM 8.5VC US2HPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 450pF @ 1MHz Current - Peak Pulse (10/1000µs): 68A (8/20µs) Voltage - Reverse Standoff (Typ): 8.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Power - Peak Pulse: 1900W (1.9kW) Power Line Protection: No |
на замовлення 3312 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
2SC4604,T6F(M | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 3A TO-92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
2SC4604,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 3A TO-92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
2SC4604,F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 3A TO-92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TODX2350A(F) | Toshiba Semiconductor and Storage |
Description: TXRX MOD OPTICAL 10MBPS 650NM Packaging: Bulk Connector Type: JIS F07 Wavelength: 650nm Mounting Type: Through Hole Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Data Rate: 10Mbps |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
|
TLP2395(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR PSH PULL 6MFSOP-5 Packaging: Tube Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TLP2398(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TLP2398(E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TLP2395(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SSM6L56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
SSM6L56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 18607 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TLX9185(TOJGBTLF(O | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLX9291(TOJGBTLF(O | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
|
TCR3RM29A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 2.9V 300MA 4DFNC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
|
TCR3RM29A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 2.9V 300MA 4DFNC |
на замовлення 8900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
TCR3RM29A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.9V 300MA 4DFNC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
TCR3RM29A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.9V 300MA 4DFNC |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TCR2EN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 3.3V 200MA 4DFNC |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCR2EN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 3.3V 200MA 4DFNC |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
|
TC78B011FTG,EL | Toshiba Semiconductor and Storage |
Description: 3-PHASE BRUSHLESS MOTOR CONTROLLPackaging: Tape & Reel (TR) Package / Case: 36-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 240mA Interface: I2C Operating Temperature: -40°C ~ 105°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 27V Applications: General Purpose Technology: NMOS Supplier Device Package: 36-WQFN (5x5) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TC78B011FTG,EL | Toshiba Semiconductor and Storage |
Description: 3-PHASE BRUSHLESS MOTOR CONTROLLPackaging: Cut Tape (CT) Package / Case: 36-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 240mA Interface: I2C Operating Temperature: -40°C ~ 105°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 27V Applications: General Purpose Technology: NMOS Supplier Device Package: 36-WQFN (5x5) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 5833 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TLP759(D4MBIMT1J,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Supplier Device Package: 8-DIP Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP759(D4KEBIMT1JF | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP759(D4IM-T1,J,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Supplier Device Package: 8-DIP Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TB67S261FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TB67S261FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TB67S269FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1 ~ 1/32 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TB67S269FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1 ~ 1/32 |
на замовлення 3974 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK12J60W,S1VE(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A TO3P Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TK11S10N1L,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 11A DPAK |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
| TCK207AN,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 21.5mOhm Input Type: Non-Inverting Voltage - Load: 0.75V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-DFNA (1.2x1.2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCK207AN,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 21.5mOhm Input Type: Non-Inverting Voltage - Load: 0.75V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-DFNA (1.2x1.2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 9868 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
|
TCK127BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCK127BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 10142 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCK128BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TCK128BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 1429 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EF45,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4.5V 200MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 4.5V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EF45,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4.5V 200MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 4.5V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.2V @ 150mA Protection Features: Over Current |
на замовлення 5647 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN34,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.4V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN34,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.4V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN27,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.7V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN27,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.7V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN13,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.3V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN13,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.3V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN32,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.2V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN32,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.2V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
| TCR3DF39,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 300MA SMV
Description: IC REG LINEAR 3.9V 300MA SMV
на замовлення 5592 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.02 грн |
| 12+ | 26.37 грн |
| 25+ | 23.06 грн |
| 100+ | 14.00 грн |
| 250+ | 11.59 грн |
| 500+ | 9.27 грн |
| 1000+ | 6.99 грн |
| TCR2EN11,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
Description: LDO REG VOUT=1.1V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.88 грн |
| TCR2EN11,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
Description: LDO REG VOUT=1.1V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.08 грн |
| 14+ | 22.28 грн |
| 25+ | 20.08 грн |
| 100+ | 13.03 грн |
| 250+ | 10.98 грн |
| 500+ | 8.92 грн |
| 1000+ | 6.75 грн |
| 2500+ | 6.07 грн |
| 5000+ | 5.74 грн |
| TCR2EN115,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.88 грн |
| TCR2EN115,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.08 грн |
| 14+ | 22.28 грн |
| 25+ | 20.08 грн |
| 100+ | 13.03 грн |
| 250+ | 10.98 грн |
| 500+ | 8.92 грн |
| 1000+ | 6.75 грн |
| 2500+ | 6.07 грн |
| 5000+ | 5.74 грн |
| CLS01(T6LSONY,Q) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 10A L-FLAT
Description: DIODE SCHOTTKY 30V 10A L-FLAT
товару немає в наявності
В кошику
од. на суму грн.
| RN2418,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.09 грн |
| 6000+ | 3.55 грн |
| RN2418,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.05 грн |
| RN2416,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.61 грн |
| 6000+ | 3.99 грн |
| RN2416,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.37 грн |
| 23+ | 13.00 грн |
| 100+ | 8.13 грн |
| 500+ | 5.63 грн |
| 1000+ | 4.99 грн |
| TK1R4F04PB,LXGQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 84.83 грн |
| TK1R4F04PB,LXGQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.59 грн |
| 10+ | 155.53 грн |
| 50+ | 119.82 грн |
| 100+ | 101.66 грн |
| 500+ | 82.74 грн |
| CUHZ8V2,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.00 грн |
| CUHZ8V2,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
на замовлення 3312 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.25 грн |
| 14+ | 21.39 грн |
| 100+ | 13.59 грн |
| 500+ | 9.57 грн |
| 1000+ | 8.54 грн |
| 2SC4604,T6F(M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4604,T6F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4604,F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| TODX2350A(F) |
Виробник: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| TLP781F(TP7,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP2395(E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP2398(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP2398(E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP2395(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| SSM6L56FE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 5.05 грн |
| 12000+ | 4.16 грн |
| SSM6L56FE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 18607 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.22 грн |
| 20+ | 15.60 грн |
| 50+ | 11.22 грн |
| 100+ | 9.18 грн |
| 500+ | 6.80 грн |
| TLX9185(TOJGBTLF(O |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLX9291(TOJGBTLF(O |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM29A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
Description: LDO REG 2.9V 300MA 4DFNC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3RM29A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
Description: LDO REG 2.9V 300MA 4DFNC
на замовлення 8900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.17 грн |
| 12+ | 26.07 грн |
| 25+ | 23.83 грн |
| 100+ | 16.65 грн |
| 250+ | 15.08 грн |
| 500+ | 12.48 грн |
| 1000+ | 9.21 грн |
| 2500+ | 8.44 грн |
| 5000+ | 7.93 грн |
| TCR3RM29A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
Description: IC REG LINEAR 2.9V 300MA 4DFNC
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM29A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
Description: IC REG LINEAR 2.9V 300MA 4DFNC
на замовлення 275 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.94 грн |
| 12+ | 26.52 грн |
| 25+ | 24.27 грн |
| 100+ | 16.96 грн |
| 250+ | 15.37 грн |
| TCR2EN10,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 3.3V 200MA 4DFNC
Description: LDO REG 3.3V 200MA 4DFNC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.33 грн |
| TCR2EN10,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 3.3V 200MA 4DFNC
Description: LDO REG 3.3V 200MA 4DFNC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.77 грн |
| 15+ | 20.13 грн |
| 25+ | 18.18 грн |
| 100+ | 11.81 грн |
| 250+ | 9.94 грн |
| 500+ | 8.08 грн |
| 1000+ | 6.11 грн |
| 2500+ | 5.50 грн |
| 5000+ | 5.19 грн |
| TC78B011FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TC78B011FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 5833 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.80 грн |
| 10+ | 131.10 грн |
| 25+ | 119.91 грн |
| 100+ | 100.93 грн |
| 250+ | 95.41 грн |
| 500+ | 93.25 грн |
| TLP759(D4MBIMT1J,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP759(D4KEBIMT1JF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP759(D4IM-T1,J,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TB67S261FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB67S261FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 249.14 грн |
| 10+ | 153.30 грн |
| 25+ | 130.64 грн |
| 100+ | 98.48 грн |
| TB67S269FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB67S269FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
на замовлення 3974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 269.96 грн |
| 10+ | 166.60 грн |
| 25+ | 142.25 грн |
| 100+ | 107.60 грн |
| 250+ | 94.84 грн |
| 500+ | 86.98 грн |
| 1000+ | 79.08 грн |
| TK12J60W,S1VE(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Description: MOSFET N-CH 600V 11.5A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| TK11S10N1L,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Description: MOSFET N-CH 100V 11A DPAK
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TCK207AN,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 22.81 грн |
| TCK207AN,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 9868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.91 грн |
| 10+ | 34.91 грн |
| 25+ | 31.34 грн |
| 100+ | 25.76 грн |
| 250+ | 24.01 грн |
| 500+ | 22.95 грн |
| 1000+ | 21.72 грн |
| 2500+ | 20.82 грн |
| TCK127BG,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 8.75 грн |
| 10000+ | 8.20 грн |
| TCK127BG,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 10142 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.60 грн |
| 21+ | 14.26 грн |
| 25+ | 12.69 грн |
| 100+ | 10.24 грн |
| 250+ | 9.44 грн |
| 500+ | 8.97 грн |
| 1000+ | 8.43 грн |
| 2500+ | 8.07 грн |
| TCK128BG,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCK128BG,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.36 грн |
| 11+ | 28.37 грн |
| 25+ | 23.35 грн |
| 100+ | 16.58 грн |
| 250+ | 13.95 грн |
| 500+ | 12.34 грн |
| 1000+ | 10.81 грн |
| TCR2EF45,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 4.5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.59 грн |
| TCR2EF45,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 4.5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
на замовлення 5647 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.26 грн |
| 49+ | 6.16 грн |
| 56+ | 5.38 грн |
| 100+ | 4.26 грн |
| 250+ | 3.88 грн |
| 500+ | 3.66 грн |
| 1000+ | 3.42 грн |
| TCR2EN34,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.4V IOUT=200MA
Description: LDO REG VOUT=3.4V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.88 грн |
| TCR2EN34,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.4V IOUT=200MA
Description: LDO REG VOUT=3.4V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.08 грн |
| 14+ | 22.28 грн |
| 25+ | 20.08 грн |
| 100+ | 13.03 грн |
| 250+ | 10.98 грн |
| 500+ | 8.92 грн |
| 1000+ | 6.75 грн |
| 2500+ | 6.07 грн |
| 5000+ | 5.74 грн |
| TCR2EN27,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.7V IOUT=200MA
Description: LDO REG VOUT=2.7V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.33 грн |
| TCR2EN27,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.7V IOUT=200MA
Description: LDO REG VOUT=2.7V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.77 грн |
| 15+ | 20.13 грн |
| 25+ | 18.18 грн |
| 100+ | 11.81 грн |
| 250+ | 9.94 грн |
| 500+ | 8.08 грн |
| 1000+ | 6.11 грн |
| 2500+ | 5.50 грн |
| 5000+ | 5.19 грн |
| TCR2EN13,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.3V IOUT=200MA
Description: LDO REG VOUT=1.3V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.33 грн |
| TCR2EN13,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.3V IOUT=200MA
Description: LDO REG VOUT=1.3V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.77 грн |
| 15+ | 20.13 грн |
| 25+ | 18.18 грн |
| 100+ | 11.81 грн |
| 250+ | 9.94 грн |
| 500+ | 8.08 грн |
| 1000+ | 6.11 грн |
| 2500+ | 5.50 грн |
| 5000+ | 5.19 грн |
| TCR2EN32,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.2V IOUT=200MA
Description: LDO REG VOUT=3.2V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.61 грн |
| TCR2EN32,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.2V IOUT=200MA
Description: LDO REG VOUT=3.2V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.31 грн |
| 14+ | 21.24 грн |
| 25+ | 19.16 грн |
| 100+ | 12.43 грн |
| 250+ | 10.47 грн |
| 500+ | 8.50 грн |
| 1000+ | 6.43 грн |
| 2500+ | 5.79 грн |
| 5000+ | 5.47 грн |













.jpg)



