Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13489) > Сторінка 172 з 225
| Фото | Назва | Виробник | Інформація |
Доступність |
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TCR3RM18A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 1.8V 300MA 4DFNCPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 12 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Current Limit, Enable Part Status: Active Voltage Dropout (Max): 0.22V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM18A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 1.8V 300MA 4DFNCPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 12 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Current Limit, Enable Part Status: Active Voltage Dropout (Max): 0.22V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 2259 шт: термін постачання 21-31 дні (днів) |
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MG09ACA18TE | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SATA III 5V-12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 18TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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MG09ACA18TA | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SATA III 5V-12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 18TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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| TLP525G(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP525G(FUJT,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP525G(TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP525G(TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TCK420G,L3F | Toshiba Semiconductor and Storage |
Description: IC GATE DRVR HIGH-SIDE 6WCSPGPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK420G,L3F | Toshiba Semiconductor and Storage |
Description: IC GATE DRVR HIGH-SIDE 6WCSPGPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 13470 шт: термін постачання 21-31 дні (днів) |
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TC7WB67CFK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST X 2 12OHM US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 12Ohm Supplier Device Package: US8 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 4ns, 4.5ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TC7WB67CFK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST X 2 12OHM US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 12Ohm Supplier Device Package: US8 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 4ns, 4.5ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 2 |
на замовлення 3529 шт: термін постачання 21-31 дні (днів) |
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AB3X2X3SM | Toshiba Semiconductor and Storage |
Description: FERRITE BEAD 2SMD GW 1LNPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Gull Wing Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Height (Max): 0.169" (4.30mm) Current Rating (Max): 6A (Typ) Part Status: Active Number of Lines: 1 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AB3X2X3SM | Toshiba Semiconductor and Storage |
Description: FERRITE BEAD 2SMD GW 1LNPackaging: Cut Tape (CT) Package / Case: 2-SMD, Gull Wing Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Height (Max): 0.169" (4.30mm) Current Rating (Max): 6A (Typ) Part Status: Active Number of Lines: 1 |
на замовлення 13220 шт: термін постачання 21-31 дні (днів) |
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SSM6N813R,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 100V 3.5A 6TSOPFPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM6N813R,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 100V 3.5A 6TSOPFPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1298 шт: термін постачання 21-31 дні (днів) |
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MG09SCA18TE | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SAS 5V-12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 18TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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MG09SCA18TA | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SAS 5V-12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 18TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| TLP620-2(GR,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP620-4(MEIDEN,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP620-4(HITACHI,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIPPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP620-4(D4BLFNC,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP620-4(BL-FNC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DF5A6.8JE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPackaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8JE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 6222 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8CJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE ESVPackaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 23pF @ 1MHz Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8CJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 23pF @ 1MHz Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 8433 шт: термін постачання 21-31 дні (днів) |
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TCR3DM33,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM33,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM33,RF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM33,RF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCK424G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK424G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 9995 шт: термін постачання 21-31 дні (днів) |
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TCK425G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK425G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 9710 шт: термін постачання 21-31 дні (днів) |
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TCK422G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK422G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 8861 шт: термін постачання 21-31 дні (днів) |
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TCK423G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK423G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 9953 шт: термін постачання 21-31 дні (днів) |
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TCK421G,L3F | Toshiba Semiconductor and Storage |
Description: GATE DRIVER IC VIN:2.7-28V OVLO Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Synchronous Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK421G,L3F | Toshiba Semiconductor and Storage |
Description: GATE DRIVER IC VIN:2.7-28V OVLO Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Synchronous Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V DigiKey Programmable: Not Verified |
на замовлення 5193 шт: термін постачання 21-31 дні (днів) |
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TK17V65W,LQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: 4-DFN-EP (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TK17V65W,LQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: 4-DFN-EP (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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TBD62384AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 18SOPPackaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C Output Configuration: Low Side Rds On (Typ): 1.5Ohm Input Type: Inverting Voltage - Load: 0V ~ 50V Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 400mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TBD62384AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 18SOPPackaging: Cut Tape (CT) Package / Case: 18-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C Output Configuration: Low Side Rds On (Typ): 1.5Ohm Input Type: Inverting Voltage - Load: 0V ~ 50V Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 400mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP |
на замовлення 4197 шт: термін постачання 21-31 дні (днів) |
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TK7R0E08QM,S1X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 7MOHMPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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TLP781F(GB-TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP781F(D4-Y,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP781F(D4YH-TP7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 75% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP781F(D4GRL-F7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(D4-Y-FD,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(GR-TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP781F(GRL-TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP781F(D4GRT7TC,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(D4YH-LF7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(D4GR-LF7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP781F(LF7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TW140N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 140MPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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TW107N65C,S1F | Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 107MOPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| TCR3RM18A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 1.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG 1.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM18A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 1.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG 1.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 2259 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.68 грн |
| 12+ | 28.95 грн |
| 25+ | 23.79 грн |
| 100+ | 16.89 грн |
| 250+ | 14.21 грн |
| 500+ | 12.57 грн |
| 1000+ | 11.00 грн |
| MG09ACA18TE |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 18TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 40737.69 грн |
| 20+ | 35855.95 грн |
| MG09ACA18TA |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 18TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 42279.52 грн |
| 20+ | 37212.62 грн |
| TLP525G(LF1,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP525G(FUJT,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP525G(TP5,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP525G(TP1,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TCK420G,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPG
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 6WCSPG
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 22.48 грн |
| TCK420G,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPG
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 6WCSPG
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 13470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.19 грн |
| 10+ | 59.33 грн |
| 25+ | 49.44 грн |
| 100+ | 35.95 грн |
| 250+ | 30.80 грн |
| 500+ | 27.63 грн |
| 1000+ | 24.55 грн |
| 2500+ | 21.73 грн |
| TC7WB67CFK,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST X 2 12OHM US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 12Ohm
Supplier Device Package: US8
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPST X 2 12OHM US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 12Ohm
Supplier Device Package: US8
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
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| TC7WB67CFK,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST X 2 12OHM US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 12Ohm
Supplier Device Package: US8
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPST X 2 12OHM US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 12Ohm
Supplier Device Package: US8
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
на замовлення 3529 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.23 грн |
| 14+ | 24.00 грн |
| 25+ | 19.68 грн |
| 100+ | 13.93 грн |
| 250+ | 11.69 грн |
| 500+ | 10.30 грн |
| 1000+ | 8.98 грн |
| AB3X2X3SM |
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Виробник: Toshiba Semiconductor and Storage
Description: FERRITE BEAD 2SMD GW 1LN
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Gull Wing
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Height (Max): 0.169" (4.30mm)
Current Rating (Max): 6A (Typ)
Part Status: Active
Number of Lines: 1
Description: FERRITE BEAD 2SMD GW 1LN
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Gull Wing
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Height (Max): 0.169" (4.30mm)
Current Rating (Max): 6A (Typ)
Part Status: Active
Number of Lines: 1
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 58.18 грн |
| 4000+ | 52.68 грн |
| 6000+ | 50.82 грн |
| 10000+ | 45.57 грн |
| AB3X2X3SM |
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Виробник: Toshiba Semiconductor and Storage
Description: FERRITE BEAD 2SMD GW 1LN
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Gull Wing
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Height (Max): 0.169" (4.30mm)
Current Rating (Max): 6A (Typ)
Part Status: Active
Number of Lines: 1
Description: FERRITE BEAD 2SMD GW 1LN
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Gull Wing
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Height (Max): 0.169" (4.30mm)
Current Rating (Max): 6A (Typ)
Part Status: Active
Number of Lines: 1
на замовлення 13220 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 113.44 грн |
| 10+ | 89.55 грн |
| 25+ | 82.58 грн |
| 50+ | 72.89 грн |
| 100+ | 68.55 грн |
| 250+ | 63.21 грн |
| 500+ | 58.47 грн |
| 1000+ | 54.99 грн |
| SSM6N813R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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| SSM6N813R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1298 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.95 грн |
| 10+ | 52.39 грн |
| 100+ | 34.42 грн |
| 500+ | 25.06 грн |
| 1000+ | 22.73 грн |
| MG09SCA18TE |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SAS 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 18TB 3.5" SAS 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 39139.55 грн |
| MG09SCA18TA |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SAS 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 18TB 3.5" SAS 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 39139.55 грн |
| TLP620-2(GR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
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| TLP620-4(MEIDEN,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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| TLP620-4(HITACHI,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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од. на суму грн.
| TLP620-4(D4BLFNC,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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од. на суму грн.
| TLP620-4(BL-FNC,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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| DF5A6.8JE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 3.23 грн |
| DF5A6.8JE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 6222 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.25 грн |
| 39+ | 8.37 грн |
| 100+ | 4.30 грн |
| 500+ | 3.65 грн |
| 1000+ | 3.27 грн |
| DF5A6.8CJE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 2.46 грн |
| DF5A6.8CJE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 8433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.59 грн |
| 41+ | 7.81 грн |
| 100+ | 4.00 грн |
| 500+ | 3.41 грн |
| 1000+ | 3.06 грн |
| TCR3DM33,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.62 грн |
| TCR3DM33,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.75 грн |
| 12+ | 28.95 грн |
| 25+ | 26.06 грн |
| 100+ | 16.89 грн |
| 250+ | 14.22 грн |
| 500+ | 11.56 грн |
| 1000+ | 8.74 грн |
| 2500+ | 7.87 грн |
| 5000+ | 7.43 грн |
| TCR3DM33,RF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.23 грн |
| TCR3DM33,RF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.09 грн |
| 12+ | 27.43 грн |
| 25+ | 24.72 грн |
| 100+ | 16.03 грн |
| 250+ | 13.50 грн |
| 500+ | 10.97 грн |
| 1000+ | 8.30 грн |
| 2500+ | 7.47 грн |
| 5000+ | 7.05 грн |
| TCK424G,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 24.84 грн |
| TCK424G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.73 грн |
| 10+ | 58.45 грн |
| 25+ | 54.92 грн |
| 100+ | 42.07 грн |
| 250+ | 39.07 грн |
| 500+ | 33.26 грн |
| 1000+ | 26.17 грн |
| 2500+ | 23.71 грн |
| TCK425G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 24.84 грн |
| TCK425G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 9710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.73 грн |
| 10+ | 58.45 грн |
| 25+ | 54.92 грн |
| 100+ | 42.07 грн |
| 250+ | 39.07 грн |
| 500+ | 33.26 грн |
| 1000+ | 26.17 грн |
| 2500+ | 23.71 грн |
| TCK422G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 24.84 грн |
| TCK422G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.73 грн |
| 10+ | 58.45 грн |
| 25+ | 54.92 грн |
| 100+ | 42.07 грн |
| 250+ | 39.07 грн |
| 500+ | 33.26 грн |
| 1000+ | 26.17 грн |
| 2500+ | 23.71 грн |
| TCK423G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 24.84 грн |
| TCK423G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 9953 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.73 грн |
| 10+ | 58.45 грн |
| 25+ | 54.92 грн |
| 100+ | 42.07 грн |
| 250+ | 39.07 грн |
| 500+ | 33.26 грн |
| 1000+ | 26.17 грн |
| 2500+ | 23.71 грн |
| TCK421G,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Synchronous
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
DigiKey Programmable: Not Verified
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Synchronous
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 22.94 грн |
| TCK421G,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Synchronous
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
DigiKey Programmable: Not Verified
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Synchronous
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
DigiKey Programmable: Not Verified
на замовлення 5193 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.76 грн |
| 10+ | 53.98 грн |
| 25+ | 50.71 грн |
| 100+ | 38.84 грн |
| 250+ | 36.08 грн |
| 500+ | 30.71 грн |
| 1000+ | 24.16 грн |
| 2500+ | 21.90 грн |
| TK17V65W,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| TK17V65W,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 394.98 грн |
| 10+ | 252.93 грн |
| TBD62384AFWG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 79.55 грн |
| 2000+ | 73.60 грн |
| TBD62384AFWG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 4197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.14 грн |
| 10+ | 150.79 грн |
| 100+ | 104.87 грн |
| 500+ | 84.55 грн |
| TK7R0E08QM,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 7MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Description: UMOS10 TO-220AB 80V 7MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
на замовлення 122 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 105.16 грн |
| 50+ | 81.60 грн |
| 100+ | 64.68 грн |
| TLP781F(GB-TP7,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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од. на суму грн.
| TLP781F(D4-Y,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
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В кошику
од. на суму грн.
| TLP781F(D4YH-TP7,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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В кошику
од. на суму грн.
| TLP781F(D4GRL-F7,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4-Y-FD,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(BL,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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В кошику
од. на суму грн.
| TLP781F(GR-TP7,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(GRL-TP7,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4GRT7TC,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4YH-LF7,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4GR-LF7,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(LF7,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TW140N120C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 964.68 грн |
| 30+ | 565.58 грн |
| TW107N65C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 848.75 грн |
| 30+ | 491.88 грн |














