Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13529) > Сторінка 172 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| TLP781F(D4GR-LF7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 200% @ 5mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP781F(LF7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TW140N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 140MPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TW107N65C,S1F | Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 107MO Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
на замовлення 266 шт: термін постачання 21-31 дні (днів) |
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| TW015N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 15MO Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 5V @ 11.7mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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| MG08ADA400E | Toshiba Semiconductor and Storage |
Description: HDD 4TB 3.5" SATA III 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 4TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MG08ADA600E | Toshiba Semiconductor and Storage |
Description: HDD 6TB 3.5" SATA III 5V-12VMemory Size: 6TB Size / Dimension: 147.00mm x 101.85mm x 26.10mm Packaging: Bulk Form Factor: 3.5" Voltage - Supply: 5V, 12V Operating Temperature: 5°C ~ 55°C Type: SATA III Memory Type: Magnetic Disk (HDD) |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
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MG08ADA400N | Toshiba Semiconductor and Storage |
Description: HDD 4TB 3.5" SATA III 5V-12VForm Factor: 3.5" Voltage - Supply: 5V, 12V Operating Temperature: 5°C ~ 55°C Type: SATA III Memory Type: Magnetic Disk (HDD) Memory Size: 4TB Size / Dimension: 147.00mm x 101.85mm x 26.10mm Packaging: Bulk |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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TLP185(GB-TPR,SE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-SOPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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TLP185(GB-TPR,SE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-SOPPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 30324 шт: термін постачання 21-31 дні (днів) |
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| TLP781F(D4-TELS,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERInput Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(YH-LF7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP785(D4-BL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP785(D4B-T6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUTCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tape & Reel (TR) Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP785F(BL-LF7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP2955F(TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Current - Output / Channel: 25 mA Number of Channels: 1 Part Status: Last Time Buy Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 16ns, 14ns Supplier Device Package: 8-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 8-SMD, Gull Wing Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2955F(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole Output Type: Push-Pull, Totem Pole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk Current - Output / Channel: 25 mA Number of Channels: 1 Part Status: Last Time Buy Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 16ns, 14ns Supplier Device Package: 8-DIP Inputs - Side 1/Side 2: 1/0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2955(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole Output Type: Push-Pull, Totem Pole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk Current - Output / Channel: 25 mA Number of Channels: 1 Part Status: Last Time Buy Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 16ns, 14ns Supplier Device Package: 8-DIP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.55V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2955(D4-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Current - Output / Channel: 25 mA Number of Channels: 1 Part Status: Last Time Buy Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Supplier Device Package: 8-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 8-SMD, Gull Wing Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2955(MBD,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - Output / Channel: 25 mA Number of Channels: 1 Part Status: Last Time Buy Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Supplier Device Package: 8-DIP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole Output Type: Push-Pull, Totem Pole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2955(TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Current - Output / Channel: 25 mA Number of Channels: 1 Part Status: Last Time Buy Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Supplier Device Package: 8-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 8-SMD, Gull Wing Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TCR5RG14A,LF | Toshiba Semiconductor and Storage |
Description: LDO REG, IOUT: 500MA VOUT: 1.4VSupplier Device Package: 4-WCSPF (0.65x0.65) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 13 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Voltage - Output (Min/Fixed): 1.4V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR5RG14A,LF | Toshiba Semiconductor and Storage |
Description: LDO REG, IOUT: 500MA VOUT: 1.4VSupplier Device Package: 4-WCSPF (0.65x0.65) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 13 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Voltage - Output (Min/Fixed): 1.4V |
на замовлення 9836 шт: термін постачання 21-31 дні (днів) |
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MG08ADA800E | Toshiba Semiconductor and Storage |
Description: HDD 8TB 3.5" SATA III 5V-12VForm Factor: 3.5" Voltage - Supply: 5V, 12V Operating Temperature: 5°C ~ 55°C Type: SATA III Memory Type: Magnetic Disk (HDD) Memory Size: 8TB Size / Dimension: 147.00mm x 101.85mm x 26.10mm Packaging: Bulk |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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TW015N65C,S1F | Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 15MOHPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V Power Dissipation (Max): 342W (Tc) Vgs(th) (Max) @ Id: 5V @ 11.7mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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TPH9R506PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 34A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 830mW (Ta), 81W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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TPH9R506PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 34A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 830mW (Ta), 81W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 36861 шт: термін постачання 21-31 дні (днів) |
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TCR5RG18A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 500MA 4-WCSPFPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.8V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.29V @ 500mA Protection Features: Over Current, Over Temperature |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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TCR5RG18A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 500MA 4-WCSPFPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.8V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.29V @ 500mA Protection Features: Over Current, Over Temperature |
на замовлення 49547 шт: термін постачання 21-31 дні (днів) |
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TCR3RM28A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 2.8V 300MA 4DFNCPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 12 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 2.8V Control Features: Current Limit, Enable Part Status: Active PSRR: 100dB ~ 68dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.15V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM28A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 2.8V 300MA 4DFNCPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 12 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 2.8V Control Features: Current Limit, Enable Part Status: Active PSRR: 100dB ~ 68dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.15V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 5610 шт: термін постачання 21-31 дні (днів) |
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TCR2LN18,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.5V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN18,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.5V I=200MA |
на замовлення 14320 шт: термін постачання 21-31 дні (днів) |
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TCR2EN18,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 200MA 4-SDFN |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR2EN18,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 200MA 4-SDFN |
на замовлення 7696 шт: термін постачання 21-31 дні (днів) |
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TCR2LN18,LSF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.8V I=200MA |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN18,LSF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.8V I=200MA |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TCR3UM18A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR3UM18A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 3608 шт: термін постачання 21-31 дні (днів) |
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SSM6J212FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A ES6Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SSM6J212FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A ES6Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CUZ20V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC USCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUZ20V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC USCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 6883 шт: термін постачання 21-31 дні (днів) |
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MUZ20V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC USM Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: USM Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MUZ20V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC USM Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: USM Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 5990 шт: термін постачання 21-31 дні (днів) |
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MSZ20V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC SMINI Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: S-Mini Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MSZ20V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC SMINI Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: S-Mini Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5970 шт: термін постачання 21-31 дні (днів) |
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CEZ20V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC ESCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: ESC Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CEZ20V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC ESCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: ESC Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
на замовлення 4889 шт: термін постачання 21-31 дні (днів) |
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CUHZ20V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 20.6VC US2HPower Line Protection: No Power - Peak Pulse: 2100W (2.1kW) Voltage - Clamping (Max) @ Ipp: 20.6V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: US2H Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 36A (8/20µs) Capacitance @ Frequency: 180pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CUHZ20V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 20.6VC US2HPower Line Protection: No Power - Peak Pulse: 2100W (2.1kW) Voltage - Clamping (Max) @ Ipp: 20.6V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: US2H Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 36A (8/20µs) Capacitance @ Frequency: 180pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 11967 шт: термін постачання 21-31 дні (днів) |
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RN1104,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K, |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1104,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K, |
на замовлення 4490 шт: термін постачання 21-31 дні (днів) |
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RN1105MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1105MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN1103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
на замовлення 315 шт: термін постачання 21-31 дні (днів) |
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RN1108MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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RN1108MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
на замовлення 31576 шт: термін постачання 21-31 дні (днів) |
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TK5R3E08QM,S1X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 5.3MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
на замовлення 81 шт: термін постачання 21-31 дні (днів) |
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| TLP781F(D4GR-LF7,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(LF7,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TW140N120C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| TW107N65C,S1F |
Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
на замовлення 266 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 420.00 грн |
| 30+ | 228.44 грн |
| 120+ | 189.79 грн |
| TW015N120C,S1F |
Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2626.94 грн |
| 30+ | 1674.66 грн |
| MG08ADA400E |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MG08ADA600E |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SATA III 5V-12V
Memory Size: 6TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Description: HDD 6TB 3.5" SATA III 5V-12V
Memory Size: 6TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18999.19 грн |
| 20+ | 15656.66 грн |
| MG08ADA400N |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Description: HDD 4TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15667.86 грн |
| 20+ | 12912.11 грн |
| TLP185(GB-TPR,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.30 грн |
| 6000+ | 11.19 грн |
| 9000+ | 10.86 грн |
| 15000+ | 9.83 грн |
| 21000+ | 9.62 грн |
| 30000+ | 9.41 грн |
| TLP185(GB-TPR,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 30324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 13+ | 23.88 грн |
| 100+ | 17.16 грн |
| 500+ | 13.26 грн |
| 1000+ | 12.32 грн |
| TLP781F(D4-TELS,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Description: PHOTOCOUPLER
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
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| TLP781F(YH-LF7,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
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| TLP785(D4-BL,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Description: PHOTOCOUPLER TRANS OUT
товару немає в наявності
В кошику
од. на суму грн.
| TLP785(D4B-T6,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP785F(BL-LF7,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP2955F(TP4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TLP2955F(F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
товару немає в наявності
В кошику
од. на суму грн.
| TLP2955(D4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Description: PHOTOCOUPLER
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
товару немає в наявності
В кошику
од. на суму грн.
| TLP2955(D4-TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TLP2955(MBD,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TLP2955(TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TCR5RG14A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 10.10 грн |
| TCR5RG14A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
на замовлення 9836 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.97 грн |
| 11+ | 29.55 грн |
| 25+ | 26.98 грн |
| 100+ | 18.85 грн |
| 250+ | 17.08 грн |
| 500+ | 14.14 грн |
| 1000+ | 10.43 грн |
| 2500+ | 9.56 грн |
| MG08ADA800E |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 8TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 8TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Description: HDD 8TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 8TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18469.93 грн |
| TW015N65C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 15MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Description: G3 650V SIC-MOSFET TO-247 15MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4329.41 грн |
| TPH9R506PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 21.73 грн |
| 6000+ | 19.35 грн |
| 9000+ | 18.54 грн |
| 15000+ | 16.56 грн |
| 21000+ | 16.06 грн |
| 30000+ | 15.58 грн |
| TPH9R506PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 36861 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.01 грн |
| 10+ | 51.94 грн |
| 100+ | 34.16 грн |
| 500+ | 24.88 грн |
| 1000+ | 22.57 грн |
| TCR5RG18A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 8.28 грн |
| 10000+ | 7.76 грн |
| 15000+ | 7.66 грн |
| 25000+ | 7.08 грн |
| 35000+ | 7.01 грн |
| TCR5RG18A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
на замовлення 49547 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.35 грн |
| 23+ | 13.52 грн |
| 25+ | 12.00 грн |
| 100+ | 9.68 грн |
| 250+ | 8.93 грн |
| 500+ | 8.48 грн |
| 1000+ | 7.98 грн |
| 2500+ | 7.59 грн |
| TCR3RM28A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3RM28A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 5610 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 11+ | 27.83 грн |
| 25+ | 25.46 грн |
| 100+ | 17.77 грн |
| 250+ | 16.11 грн |
| 500+ | 13.33 грн |
| 1000+ | 9.83 грн |
| 2500+ | 9.01 грн |
| 5000+ | 8.47 грн |
| TCR2LN18,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
Description: LDO REG VOUT=2.5V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.35 грн |
| TCR2LN18,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
Description: LDO REG VOUT=2.5V I=200MA
на замовлення 14320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.90 грн |
| 15+ | 20.22 грн |
| 25+ | 18.27 грн |
| 100+ | 11.86 грн |
| 250+ | 9.99 грн |
| 500+ | 8.11 грн |
| 1000+ | 6.14 грн |
| 2500+ | 5.53 грн |
| 5000+ | 5.22 грн |
| TCR2EN18,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA 4-SDFN
Description: IC REG LINEAR 1.8V 200MA 4-SDFN
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2EN18,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA 4-SDFN
Description: IC REG LINEAR 1.8V 200MA 4-SDFN
на замовлення 7696 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.17 грн |
| 36+ | 8.51 грн |
| 40+ | 7.46 грн |
| 100+ | 5.97 грн |
| 250+ | 5.47 грн |
| 500+ | 5.16 грн |
| 1000+ | 4.84 грн |
| 2500+ | 4.58 грн |
| 5000+ | 4.51 грн |
| TCR2LN18,LSF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V I=200MA
Description: LDO REG VOUT=1.8V I=200MA
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.91 грн |
| TCR2LN18,LSF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V I=200MA
Description: LDO REG VOUT=1.8V I=200MA
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 14+ | 22.39 грн |
| 25+ | 20.18 грн |
| 100+ | 13.10 грн |
| 250+ | 11.03 грн |
| 500+ | 8.96 грн |
| 1000+ | 6.78 грн |
| 2500+ | 6.10 грн |
| 5000+ | 5.76 грн |
| TCR3UM18A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3UM18A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 3608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 11+ | 27.16 грн |
| 25+ | 24.48 грн |
| 100+ | 15.88 грн |
| 250+ | 13.37 грн |
| 500+ | 10.86 грн |
| 1000+ | 8.22 грн |
| 2500+ | 7.40 грн |
| SSM6J212FE,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SSM6J212FE,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| CUZ20V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.90 грн |
| CUZ20V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 6883 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 27+ | 11.12 грн |
| 100+ | 6.95 грн |
| 500+ | 4.80 грн |
| 1000+ | 4.24 грн |
| MUZ20V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.15 грн |
| MUZ20V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.02 грн |
| 19+ | 16.34 грн |
| 100+ | 7.96 грн |
| 500+ | 6.23 грн |
| 1000+ | 4.33 грн |
| MSZ20V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.99 грн |
| MSZ20V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.25 грн |
| 19+ | 15.74 грн |
| 100+ | 7.66 грн |
| 500+ | 5.99 грн |
| 1000+ | 4.16 грн |
| CEZ20V,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| CEZ20V,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
на замовлення 4889 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.85 грн |
| 44+ | 6.79 грн |
| 100+ | 3.24 грн |
| 500+ | 2.91 грн |
| 1000+ | 2.78 грн |
| 2000+ | 2.75 грн |
| CUHZ20V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.67 грн |
| 6000+ | 5.09 грн |
| 9000+ | 5.06 грн |
| CUHZ20V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 11967 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.02 грн |
| 18+ | 16.72 грн |
| 100+ | 12.29 грн |
| 500+ | 8.66 грн |
| 1000+ | 7.72 грн |
| RN1104,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.95 грн |
| RN1104,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
на замовлення 4490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.35 грн |
| 16+ | 19.03 грн |
| 100+ | 10.81 грн |
| 500+ | 6.71 грн |
| 1000+ | 5.15 грн |
| RN1105MFV,L3XHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 4.13 грн |
| RN1105MFV,L3XHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 14+ | 21.34 грн |
| 100+ | 11.33 грн |
| 500+ | 6.99 грн |
| 1000+ | 4.76 грн |
| 2000+ | 4.29 грн |
| RN1103MFV,L3F(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN1103MFV,L3F(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 24+ | 12.54 грн |
| 100+ | 6.82 грн |
| RN1108MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.28 грн |
| 16000+ | 1.91 грн |
| 24000+ | 1.72 грн |
| RN1108MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
на замовлення 31576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 24+ | 12.54 грн |
| 100+ | 6.82 грн |
| 500+ | 3.94 грн |
| 1000+ | 2.69 грн |
| 2000+ | 2.28 грн |
| TK5R3E08QM,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.61 грн |
| 50+ | 80.96 грн |

























