Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13513) > Сторінка 172 з 226
| Фото | Назва | Виробник | Інформація |
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SSM6N813R,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 100V 3.5A 6TSOPFPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM6N813R,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 100V 3.5A 6TSOPFPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5006 шт: термін постачання 21-31 дні (днів) |
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MG09SCA18TE | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SAS 5V-12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 18TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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MG09SCA18TA | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SAS 5V-12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 18TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| TLP620-2(GR,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP620-4(MEIDEN,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP620-4(HITACHI,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIPPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP620-4(D4BLFNC,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP620-4(BL-FNC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DF5A6.8JE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPackaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8JE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 6222 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8CJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE ESVPackaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 23pF @ 1MHz Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8CJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 23pF @ 1MHz Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Power Line Protection: No |
на замовлення 8433 шт: термін постачання 21-31 дні (днів) |
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TCR3DM33,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM33,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM33,RF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM33,RF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCK424G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK424G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 9995 шт: термін постачання 21-31 дні (днів) |
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TCK425G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK425G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 9710 шт: термін постачання 21-31 дні (днів) |
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TCK422G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK422G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 8861 шт: термін постачання 21-31 дні (днів) |
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TCK423G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK423G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 9953 шт: термін постачання 21-31 дні (днів) |
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TCK421G,L3F | Toshiba Semiconductor and Storage |
Description: GATE DRIVER IC VIN:2.7-28V OVLO Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Synchronous Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK421G,L3F | Toshiba Semiconductor and Storage |
Description: GATE DRIVER IC VIN:2.7-28V OVLO Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Synchronous Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V DigiKey Programmable: Not Verified |
на замовлення 5193 шт: термін постачання 21-31 дні (днів) |
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TK17V65W,LQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: 4-DFN-EP (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TK17V65W,LQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: 4-DFN-EP (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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TBD62384AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 18SOPPackaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C Output Configuration: Low Side Rds On (Typ): 1.5Ohm Input Type: Inverting Voltage - Load: 0V ~ 50V Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 400mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TBD62384AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 18SOPPackaging: Cut Tape (CT) Package / Case: 18-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C Output Configuration: Low Side Rds On (Typ): 1.5Ohm Input Type: Inverting Voltage - Load: 0V ~ 50V Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 400mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP |
на замовлення 4197 шт: термін постачання 21-31 дні (днів) |
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TK7R0E08QM,S1X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 7MOHMPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V Power Dissipation (Max): 87W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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TLP781F(GB-TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP781F(D4-Y,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP781F(D4YH-TP7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 75% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP781F(D4GRL-F7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(D4-Y-FD,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(GR-TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TLP781F(GRL-TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP781F(D4GRT7TC,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(D4YH-LF7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(D4GR-LF7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TLP781F(LF7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TW140N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 140MPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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TW107N65C,S1F | Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 107MOPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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TW027N65C,S1F | Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 27MOHPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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TW015N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 15MOPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 5V @ 11.7mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
|
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| MG08ADA400E | Toshiba Semiconductor and Storage |
Description: HDD 4TB 3.5" SATA III 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 4TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MG08ADA600E | Toshiba Semiconductor and Storage |
Description: HDD 6TB 3.5" SATA III 5V-12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
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MG08ADA400N | Toshiba Semiconductor and Storage |
Description: HDD 4TB 3.5" SATA III 5V-12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 4TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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TLP185(GB-TPR,SE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-SOPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TLP185(GB-TPR,SE | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-SOPPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 321 шт: термін постачання 21-31 дні (днів) |
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| TLP781F(D4-TELS,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(YH-LF7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP785(D4-BL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP785(D4B-T6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUTPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TLP785F(BL-LF7,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP2955F(TP4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 16ns, 14ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2955F(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Push-Pull, Totem Pole Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 16ns, 14ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| SSM6N813R,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 18.61 грн |
| SSM6N813R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5006 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.23 грн |
| 10+ | 45.97 грн |
| 100+ | 30.20 грн |
| 500+ | 21.99 грн |
| 1000+ | 19.94 грн |
| MG09SCA18TE |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SAS 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 18TB 3.5" SAS 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 36394.22 грн |
| MG09SCA18TA |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SAS 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 18TB 3.5" SAS 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 36394.22 грн |
| TLP620-2(GR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP620-4(MEIDEN,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP620-4(HITACHI,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP620-4(D4BLFNC,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP620-4(BL-FNC,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| DF5A6.8JE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 3.01 грн |
| DF5A6.8JE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 6222 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.32 грн |
| 39+ | 7.79 грн |
| 100+ | 4.00 грн |
| 500+ | 3.40 грн |
| 1000+ | 3.04 грн |
| DF5A6.8CJE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 2.29 грн |
| DF5A6.8CJE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Description: TVS DIODE ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
на замовлення 8433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.78 грн |
| 41+ | 7.27 грн |
| 100+ | 3.72 грн |
| 500+ | 3.17 грн |
| 1000+ | 2.85 грн |
| TCR3DM33,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.09 грн |
| TCR3DM33,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.96 грн |
| 12+ | 26.91 грн |
| 25+ | 24.23 грн |
| 100+ | 15.70 грн |
| 250+ | 13.23 грн |
| 500+ | 10.74 грн |
| 1000+ | 8.13 грн |
| 2500+ | 7.32 грн |
| 5000+ | 6.91 грн |
| TCR3DM33,RF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.73 грн |
| TCR3DM33,RF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.42 грн |
| 12+ | 25.51 грн |
| 25+ | 22.99 грн |
| 100+ | 14.90 грн |
| 250+ | 12.55 грн |
| 500+ | 10.20 грн |
| 1000+ | 7.71 грн |
| 2500+ | 6.94 грн |
| 5000+ | 6.56 грн |
| TCK424G,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 23.10 грн |
| TCK424G,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.91 грн |
| 10+ | 54.35 грн |
| 25+ | 51.07 грн |
| 100+ | 39.12 грн |
| 250+ | 36.33 грн |
| 500+ | 30.92 грн |
| 1000+ | 24.33 грн |
| 2500+ | 22.05 грн |
| TCK425G,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 23.10 грн |
| TCK425G,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 9710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.91 грн |
| 10+ | 54.35 грн |
| 25+ | 51.07 грн |
| 100+ | 39.12 грн |
| 250+ | 36.33 грн |
| 500+ | 30.92 грн |
| 1000+ | 24.33 грн |
| 2500+ | 22.05 грн |
| TCK422G,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 23.10 грн |
| TCK422G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.91 грн |
| 10+ | 54.35 грн |
| 25+ | 51.07 грн |
| 100+ | 39.12 грн |
| 250+ | 36.33 грн |
| 500+ | 30.92 грн |
| 1000+ | 24.33 грн |
| 2500+ | 22.05 грн |
| TCK423G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 23.10 грн |
| TCK423G,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 9953 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.91 грн |
| 10+ | 54.35 грн |
| 25+ | 51.07 грн |
| 100+ | 39.12 грн |
| 250+ | 36.33 грн |
| 500+ | 30.92 грн |
| 1000+ | 24.33 грн |
| 2500+ | 22.05 грн |
| TCK421G,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Synchronous
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
DigiKey Programmable: Not Verified
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Synchronous
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 21.33 грн |
| TCK421G,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Synchronous
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
DigiKey Programmable: Not Verified
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Synchronous
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
DigiKey Programmable: Not Verified
на замовлення 5193 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.29 грн |
| 10+ | 50.20 грн |
| 25+ | 47.16 грн |
| 100+ | 36.12 грн |
| 250+ | 33.55 грн |
| 500+ | 28.55 грн |
| 1000+ | 22.47 грн |
| 2500+ | 20.36 грн |
| TK17V65W,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
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В кошику
од. на суму грн.
| TK17V65W,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 367.28 грн |
| 10+ | 235.19 грн |
| TBD62384AFWG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 73.97 грн |
| 2000+ | 68.44 грн |
| TBD62384AFWG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 4197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.29 грн |
| 10+ | 140.21 грн |
| 100+ | 97.52 грн |
| 500+ | 78.62 грн |
| TK7R0E08QM,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 7MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Description: UMOS10 TO-220AB 80V 7MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
на замовлення 122 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.79 грн |
| 50+ | 75.88 грн |
| 100+ | 60.14 грн |
| TLP781F(GB-TP7,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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од. на суму грн.
| TLP781F(D4-Y,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4YH-TP7,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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од. на суму грн.
| TLP781F(D4GRL-F7,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4-Y-FD,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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од. на суму грн.
| TLP781F(BL,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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од. на суму грн.
| TLP781F(GR-TP7,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(GRL-TP7,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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| TLP781F(D4GRT7TC,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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од. на суму грн.
| TLP781F(D4YH-LF7,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4GR-LF7,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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| TLP781F(LF7,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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| TW140N120C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 877.00 грн |
| 30+ | 513.98 грн |
| TW107N65C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 771.51 грн |
| TW027N65C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 27MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Description: G3 650V SIC-MOSFET TO-247 27MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1774.01 грн |
| TW015N120C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5101.83 грн |
| 30+ | 4000.78 грн |
| MG08ADA400E |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
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| MG08ADA600E |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 6TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 39 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 18878.15 грн |
| 20+ | 15556.92 грн |
| MG08ADA400N |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 4TB 3.5" SATA III 5V-12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 15568.04 грн |
| 20+ | 12829.85 грн |
| TLP185(GB-TPR,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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| TLP185(GB-TPR,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 321 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 30.80 грн |
| 15+ | 20.69 грн |
| 100+ | 14.80 грн |
| TLP781F(D4-TELS,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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| TLP781F(YH-LF7,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
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| TLP785(D4-BL,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Description: PHOTOCOUPLER TRANS OUT
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| TLP785(D4B-T6,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER TRANS OUT
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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| TLP785F(BL-LF7,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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| TLP2955F(TP4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
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| TLP2955F(F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 14ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
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