Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 173 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
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TCR5RG14A,LF | Toshiba Semiconductor and Storage |
Description: LDO REG, IOUT: 500MA VOUT: 1.4VSupplier Device Package: 4-WCSPF (0.65x0.65) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 13 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Voltage - Output (Min/Fixed): 1.4V |
на замовлення 9836 шт: термін постачання 21-31 дні (днів) |
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MG08ADA800E | Toshiba Semiconductor and Storage |
Description: HDD 8TB 3.5" SATA III 5V-12VForm Factor: 3.5" Voltage - Supply: 5V, 12V Operating Temperature: 5°C ~ 55°C Type: SATA III Memory Type: Magnetic Disk (HDD) Memory Size: 8TB Size / Dimension: 147.00mm x 101.85mm x 26.10mm Packaging: Bulk |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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TW015N65C,S1F | Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 15MOHPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V Power Dissipation (Max): 342W (Tc) Vgs(th) (Max) @ Id: 5V @ 11.7mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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TPH9R506PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 34A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 830mW (Ta), 81W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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TPH9R506PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 34A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 830mW (Ta), 81W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 31414 шт: термін постачання 21-31 дні (днів) |
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TCR5RG18A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 500MA 4-WCSPFPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.8V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.29V @ 500mA Protection Features: Over Current, Over Temperature |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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TCR5RG18A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 500MA 4-WCSPFPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.8V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.29V @ 500mA Protection Features: Over Current, Over Temperature |
на замовлення 49547 шт: термін постачання 21-31 дні (днів) |
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TCR3RM28A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 2.8V 300MA 4DFNCPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 12 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 2.8V Control Features: Current Limit, Enable Part Status: Active PSRR: 100dB ~ 68dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.15V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM28A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 2.8V 300MA 4DFNCPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 12 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 2.8V Control Features: Current Limit, Enable Part Status: Active PSRR: 100dB ~ 68dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.15V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 5610 шт: термін постачання 21-31 дні (днів) |
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TCR2LN18,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.5V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN18,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.5V I=200MA |
на замовлення 14320 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN18,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.8V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN18,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.8V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN18,LSF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.8V I=200MA |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN18,LSF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.8V I=200MA |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TCR3UM18A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR3UM18A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 3608 шт: термін постачання 21-31 дні (днів) |
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SSM6J212FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A ES6Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SSM6J212FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A ES6Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CUZ20V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC USCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUZ20V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC USCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 6883 шт: термін постачання 21-31 дні (днів) |
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MUZ20V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC USM Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: USM Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MUZ20V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC USM Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: USM Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 5990 шт: термін постачання 21-31 дні (днів) |
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MSZ20V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC SMINI Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: S-Mini Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MSZ20V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC SMINI Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: S-Mini Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5970 шт: термін постачання 21-31 дні (днів) |
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CEZ20V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC ESCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: ESC Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CEZ20V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 30.5VC ESCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 30.5V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: ESC Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 29pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
на замовлення 4889 шт: термін постачання 21-31 дні (днів) |
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CUHZ20V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 20.6VC US2HPower Line Protection: No Power - Peak Pulse: 2100W (2.1kW) Voltage - Clamping (Max) @ Ipp: 20.6V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: US2H Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 36A (8/20µs) Capacitance @ Frequency: 180pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CUHZ20V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 20VWM 20.6VC US2HPower Line Protection: No Power - Peak Pulse: 2100W (2.1kW) Voltage - Clamping (Max) @ Ipp: 20.6V (Typ) Voltage - Breakdown (Min): 18.8V Unidirectional Channels: 1 Supplier Device Package: US2H Voltage - Reverse Standoff (Typ): 20V Current - Peak Pulse (10/1000µs): 36A (8/20µs) Capacitance @ Frequency: 180pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 11967 шт: термін постачання 21-31 дні (днів) |
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RN1104,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K, |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1104,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K, |
на замовлення 4490 шт: термін постачання 21-31 дні (днів) |
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RN1105MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1105MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN1103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
на замовлення 315 шт: термін постачання 21-31 дні (днів) |
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RN1108MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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RN1108MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
на замовлення 31576 шт: термін постачання 21-31 дні (днів) |
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TK5R3E08QM,S1X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 5.3MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
на замовлення 81 шт: термін постачання 21-31 дні (днів) |
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TK3R2A08QM,S4X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220SIS 80V 3.2MOHM |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TK5R1A08QM,S4X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220SIS 80V 5.1MOHMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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TK2R4E08QM,S1X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 2.4MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.2mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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TB62214AFG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOPPackaging: Tape & Reel (TR) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TB62214AFG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOPPackaging: Cut Tape (CT) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP3546A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3.5A 0-100VPackaging: Tape & Reel (TR) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 3.5 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 80 mOhms |
на замовлення 19500 шт: термін постачання 21-31 дні (днів) |
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TLP3546A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3.5A 0-100VPackaging: Cut Tape (CT) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 3.5 A Approval Agency: CSA, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 80 mOhms |
на замовлення 22321 шт: термін постачання 21-31 дні (днів) |
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TLP3554(LF1,F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 2.5A 0-40VPackaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 2.5 A Approval Agency: CSA, cUL, UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SMD Voltage - Load: 0 V ~ 40 V On-State Resistance (Max): 150 mOhms |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| TLP714F(4HWTP,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714F(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714F(D4-MBSTP,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714F(D4HW1TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714F(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TBD62308APG,HZ | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 370mOhm Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 16-DIP |
на замовлення 808 шт: термін постачання 21-31 дні (днів) |
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TCR3DM12,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Voltage Dropout (Max): 0.6V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM12,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Voltage Dropout (Max): 0.6V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 39902 шт: термін постачання 21-31 дні (днів) |
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| TLP630(GB-FANUC,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV TRANS W/BASE 6-DIPCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Last Time Buy Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 55V Supplier Device Package: 6-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor with Base Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RN1415,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINIQualification: AEC-Q101 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1415,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINIQualification: AEC-Q101 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2408,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIResistors Included: R1 and R2 Qualification: AEC-Q101 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| TCR5RG14A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
на замовлення 9836 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.85 грн |
| 11+ | 30.24 грн |
| 25+ | 27.61 грн |
| 100+ | 19.29 грн |
| 250+ | 17.48 грн |
| 500+ | 14.47 грн |
| 1000+ | 10.67 грн |
| 2500+ | 9.78 грн |
| MG08ADA800E |
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Виробник: Toshiba Semiconductor and Storage
Description: HDD 8TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 8TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Description: HDD 8TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 8TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 18899.46 грн |
| TW015N65C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 15MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Description: G3 650V SIC-MOSFET TO-247 15MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 4430.09 грн |
| TPH9R506PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 24.63 грн |
| 6000+ | 22.02 грн |
| 9000+ | 21.60 грн |
| TPH9R506PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 31414 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 97.53 грн |
| 10+ | 59.18 грн |
| 100+ | 39.24 грн |
| 500+ | 28.81 грн |
| 1000+ | 26.23 грн |
| TCR5RG18A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 8.47 грн |
| 10000+ | 7.94 грн |
| 15000+ | 7.83 грн |
| 25000+ | 7.24 грн |
| 35000+ | 7.18 грн |
| TCR5RG18A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
на замовлення 49547 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.83 грн |
| 23+ | 13.83 грн |
| 25+ | 12.28 грн |
| 100+ | 9.91 грн |
| 250+ | 9.14 грн |
| 500+ | 8.68 грн |
| 1000+ | 8.16 грн |
| 2500+ | 7.77 грн |
| TCR3RM28A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3RM28A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 5610 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.47 грн |
| 11+ | 28.48 грн |
| 25+ | 26.05 грн |
| 100+ | 18.19 грн |
| 250+ | 16.48 грн |
| 500+ | 13.64 грн |
| 1000+ | 10.06 грн |
| 2500+ | 9.22 грн |
| 5000+ | 8.66 грн |
| TCR2LN18,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
Description: LDO REG VOUT=2.5V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.48 грн |
| TCR2LN18,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
Description: LDO REG VOUT=2.5V I=200MA
на замовлення 14320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2EN18,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V IOUT=200MA
Description: LDO REG VOUT=1.8V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.48 грн |
| TCR2EN18,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V IOUT=200MA
Description: LDO REG VOUT=1.8V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2LN18,LSF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V I=200MA
Description: LDO REG VOUT=1.8V I=200MA
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 6.05 грн |
| TCR2LN18,LSF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V I=200MA
Description: LDO REG VOUT=1.8V I=200MA
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.92 грн |
| 14+ | 22.91 грн |
| 25+ | 20.65 грн |
| 100+ | 13.40 грн |
| 250+ | 11.29 грн |
| 500+ | 9.17 грн |
| 1000+ | 6.94 грн |
| 2500+ | 6.24 грн |
| 5000+ | 5.90 грн |
| TCR3UM18A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3UM18A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 3608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.06 грн |
| 11+ | 27.79 грн |
| 25+ | 25.04 грн |
| 100+ | 16.24 грн |
| 250+ | 13.68 грн |
| 500+ | 11.12 грн |
| 1000+ | 8.41 грн |
| 2500+ | 7.57 грн |
| SSM6J212FE,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SSM6J212FE,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| CUZ20V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.00 грн |
| CUZ20V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 6883 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.82 грн |
| 27+ | 11.38 грн |
| 100+ | 7.12 грн |
| 500+ | 4.91 грн |
| 1000+ | 4.34 грн |
| MUZ20V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.25 грн |
| MUZ20V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.58 грн |
| 19+ | 16.72 грн |
| 100+ | 8.15 грн |
| 500+ | 6.38 грн |
| 1000+ | 4.43 грн |
| MSZ20V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.09 грн |
| MSZ20V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.79 грн |
| 19+ | 16.11 грн |
| 100+ | 7.83 грн |
| 500+ | 6.13 грн |
| 1000+ | 4.26 грн |
| CEZ20V,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| CEZ20V,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
на замовлення 4889 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.10 грн |
| 44+ | 6.95 грн |
| 100+ | 3.31 грн |
| 500+ | 2.97 грн |
| 1000+ | 2.84 грн |
| 2000+ | 2.81 грн |
| CUHZ20V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.80 грн |
| 6000+ | 5.21 грн |
| 9000+ | 5.18 грн |
| CUHZ20V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 11967 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.58 грн |
| 18+ | 17.10 грн |
| 100+ | 12.58 грн |
| 500+ | 8.86 грн |
| 1000+ | 7.90 грн |
| RN1104,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.07 грн |
| RN1104,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
на замовлення 4490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.96 грн |
| 16+ | 19.47 грн |
| 100+ | 11.06 грн |
| 500+ | 6.87 грн |
| 1000+ | 5.27 грн |
| RN1105MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8000+ | 4.22 грн |
| RN1105MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.75 грн |
| 14+ | 21.84 грн |
| 100+ | 11.59 грн |
| 500+ | 7.16 грн |
| 1000+ | 4.87 грн |
| 2000+ | 4.39 грн |
| RN1103MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN1103MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.27 грн |
| 24+ | 12.83 грн |
| 100+ | 6.98 грн |
| RN1108MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8000+ | 2.33 грн |
| 16000+ | 1.95 грн |
| 24000+ | 1.76 грн |
| RN1108MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
на замовлення 31576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.27 грн |
| 24+ | 12.83 грн |
| 100+ | 6.98 грн |
| 500+ | 4.03 грн |
| 1000+ | 2.75 грн |
| 2000+ | 2.34 грн |
| TK5R3E08QM,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.05 грн |
| 50+ | 82.85 грн |
| TK3R2A08QM,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 3.2MOHM
Description: UMOS10 TO-220SIS 80V 3.2MOHM
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 165.72 грн |
| TK5R1A08QM,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 5.1MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Description: UMOS10 TO-220SIS 80V 5.1MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 146.69 грн |
| 50+ | 68.55 грн |
| TK2R4E08QM,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Description: UMOS10 TO-220AB 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 220.43 грн |
| 50+ | 168.32 грн |
| 100+ | 144.27 грн |
| TB62214AFG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TB62214AFG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
В кошику
од. на суму грн.
| TLP3546A(TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3.5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3.5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
на замовлення 19500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 175.40 грн |
| 3000+ | 163.09 грн |
| TLP3546A(TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3.5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3.5 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
на замовлення 22321 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 253.74 грн |
| 10+ | 217.31 грн |
| 25+ | 207.60 грн |
| 50+ | 188.14 грн |
| 100+ | 181.69 грн |
| 250+ | 173.50 грн |
| 500+ | 164.80 грн |
| TLP3554(LF1,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2.5 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2.5 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 206.16 грн |
| 10+ | 176.54 грн |
| 25+ | 168.56 грн |
| 50+ | 152.79 грн |
| 100+ | 147.54 грн |
| TLP714F(4HWTP,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714F(D4-TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714F(D4-MBSTP,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714F(D4HW1TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714(TP,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714(D4-TP,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714F(TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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од. на суму грн.
| TBD62308APG,HZ |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
на замовлення 808 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 200.61 грн |
| 25+ | 107.11 грн |
| 100+ | 86.49 грн |
| 500+ | 65.67 грн |
| TCR3DM12,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.29 грн |
| TCR3DM12,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 39902 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.58 грн |
| 18+ | 17.64 грн |
| 25+ | 15.91 грн |
| 100+ | 10.32 грн |
| 250+ | 8.69 грн |
| 500+ | 7.06 грн |
| 1000+ | 5.34 грн |
| 2500+ | 4.81 грн |
| 5000+ | 4.70 грн |
| TLP630(GB-FANUC,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Last Time Buy
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Last Time Buy
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
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од. на суму грн.
| RN1415,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.74 грн |
| 6000+ | 4.11 грн |
| RN1415,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.79 грн |
| RN2408,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V SMINI
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.37 грн |
| 6000+ | 3.79 грн |




























