Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13538) > Сторінка 166 з 226
| Фото | Назва | Виробник | Інформація |
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TPCA8109(TE12L1,V | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 30V 24A 8SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP293(GB,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOPPackaging: Bulk Package / Case: 6-SMD (4 Leads), Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-MFSOP, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2122 шт: термін постачання 21-31 дні (днів) |
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TCR2LN30,LSF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN30,LSF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 9500 шт: термін постачання 21-31 дні (днів) |
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TCR2EN30,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2EN30,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
на замовлення 18366 шт: термін постачання 21-31 дні (днів) |
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TCR2LN30,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN30,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 17730 шт: термін постачання 21-31 дні (днів) |
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| SSM3K376R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON NCH ID: 4A VDSS: 30Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| SSM3K376R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON NCH ID: 4A VDSS: 30Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 7792 шт: термін постачання 21-31 дні (днів) |
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TB62216FTG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 4.75V-5.25V 48QFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 48-QFN (7x7) Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TB62216FTG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 4.75V-5.25V 48QFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 38V Supplier Device Package: 48-QFN (7x7) Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 3859 шт: термін постачання 21-31 дні (днів) |
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TB67S128FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFNPackaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 5A Interface: Parallel Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 0V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 6.5V ~ 44V Supplier Device Package: 64-VQFN (9x9) Motor Type - Stepper: Bipolar Step Resolution: 1/8, 1/16, 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TB67S128FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFNPackaging: Cut Tape (CT) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 5A Interface: Parallel Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 0V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 6.5V ~ 44V Supplier Device Package: 64-VQFN (9x9) Motor Type - Stepper: Bipolar Step Resolution: 1/8, 1/16, 1/32 |
на замовлення 7224 шт: термін постачання 21-31 дні (днів) |
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TPCA8128,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 34A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DF2B6M4BSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DF2B6M4BSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 17623 шт: термін постачання 21-31 дні (днів) |
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TC7SZ05FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOPFeatures: Open Drain Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Current - Output High, Low: -, 32mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 2529 шт: термін постачання 21-31 дні (днів) |
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TCR3DM135,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.35V 300MA 4-DFNPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.35V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.52V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM135,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.35V 300MA 4-DFNPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.35V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.52V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 19975 шт: термін постачання 21-31 дні (днів) |
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TK16J60W5,S1VQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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TK16J60W,S1VE | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TB9101FNG,EL | Toshiba Semiconductor and Storage |
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TB9101FNG,EL | Toshiba Semiconductor and Storage |
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR5AM33,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 500MA 5DFNB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR5AM33,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 500MA 5DFNB |
на замовлення 629 шт: термін постачання 21-31 дні (днів) |
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TCR5AM105A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.05V 500MA 5DFNB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR5AM105A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.05V 500MA 5DFNB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR5AM18,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 500MA 5DFNB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR5AM18,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 500MA 5DFNB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP734(D4-C172,F) | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER TRANS Packaging: Tape & Reel (TR) Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM6J422TU,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8VPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM6J422TU,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8VPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 2567 шт: термін постачання 21-31 дні (днів) |
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SSM6L820R,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPFPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM6L820R,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPFPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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4N26(SHORT,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV TRANS W/BASE 6DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Rise / Fall Time (Typ): 2µs, 200µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 4N26(SHORT-LF5,F) | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER TRANSPackaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Rise / Fall Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TB6633AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP2261(D4-TP4,E | Toshiba Semiconductor and Storage |
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP2261(D4-LF4,E | Toshiba Semiconductor and Storage |
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM6K819R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEVPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM6K819R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEVPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 3028 шт: термін постачання 21-31 дні (днів) |
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TPH9R00CQH,LQ | Toshiba Semiconductor and Storage |
Description: UMOS10 SOP-ADV(N) 150V 9MOHMPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V Power Dissipation (Max): 960mW (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH9R00CQH,LQ | Toshiba Semiconductor and Storage |
Description: UMOS10 SOP-ADV(N) 150V 9MOHMPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V Power Dissipation (Max): 960mW (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V |
на замовлення 9325 шт: термін постачання 21-31 дні (днів) |
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RN2116,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN2116,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN2116,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN2116,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN1108,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN1108,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 2865 шт: термін постачання 21-31 дні (днів) |
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RN2106MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN2106MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM |
на замовлення 3033 шт: термін постачання 21-31 дні (днів) |
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RN2106,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2106,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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1SS272TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC-61BPackaging: Cut Tape (CT) Package / Case: SC-61AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-61B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 31501 шт: термін постачання 21-31 дні (днів) |
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| TLP781(D4GRT6-TC,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781(D4TELS-T6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781(D4-Y,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781(D4-Y-TP6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781(D4-GRH,E) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| TPCA8109(TE12L1,V |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 24A 8SOP
Description: MOSFET P-CH 30V 24A 8SOP
товару немає в наявності
В кошику
од. на суму грн.
| TLP293(GB,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 2122 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.19 грн |
| 14+ | 22.82 грн |
| 175+ | 15.26 грн |
| 525+ | 12.59 грн |
| 1050+ | 11.71 грн |
| 2100+ | 10.96 грн |
| TCR2LN30,LSF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN30,LSF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 9500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 38+ | 7.93 грн |
| 43+ | 6.97 грн |
| 100+ | 5.56 грн |
| 250+ | 5.09 грн |
| 500+ | 4.81 грн |
| 1000+ | 4.50 грн |
| 2500+ | 4.26 грн |
| 5000+ | 4.11 грн |
| TCR2EN30,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.49 грн |
| TCR2EN30,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
на замовлення 18366 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 38+ | 7.93 грн |
| 43+ | 6.97 грн |
| 100+ | 5.56 грн |
| 250+ | 5.09 грн |
| 500+ | 4.81 грн |
| 1000+ | 4.50 грн |
| 2500+ | 4.26 грн |
| 5000+ | 4.18 грн |
| TCR2LN30,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN30,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 17730 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 39+ | 7.86 грн |
| 44+ | 6.88 грн |
| 100+ | 5.49 грн |
| 250+ | 5.03 грн |
| 500+ | 4.75 грн |
| 1000+ | 4.44 грн |
| 2500+ | 4.21 грн |
| 5000+ | 4.13 грн |
| SSM3K376R,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.30 грн |
| 6000+ | 5.65 грн |
| SSM3K376R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
на замовлення 7792 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.53 грн |
| 15+ | 20.58 грн |
| 100+ | 13.09 грн |
| 500+ | 9.23 грн |
| 1000+ | 8.25 грн |
| TB62216FTG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 87.52 грн |
| TB62216FTG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 3859 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 185.71 грн |
| 10+ | 160.58 грн |
| 25+ | 151.51 грн |
| 100+ | 121.15 грн |
| 250+ | 113.76 грн |
| 500+ | 99.54 грн |
| 1000+ | 81.12 грн |
| TB67S128FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 0V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Step Resolution: 1/8, 1/16, 1/32
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 0V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Step Resolution: 1/8, 1/16, 1/32
товару немає в наявності
В кошику
од. на суму грн.
| TB67S128FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 0V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Step Resolution: 1/8, 1/16, 1/32
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 0V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Step Resolution: 1/8, 1/16, 1/32
на замовлення 7224 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 501.96 грн |
| 10+ | 373.38 грн |
| 25+ | 345.93 грн |
| 100+ | 296.29 грн |
| 250+ | 282.78 грн |
| 500+ | 274.63 грн |
| 1000+ | 263.54 грн |
| TPCA8128,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Description: MOSFET P-CH 30V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| DF2B6M4BSL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.16 грн |
| DF2B6M4BSL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 17623 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.09 грн |
| 22+ | 13.92 грн |
| 100+ | 8.71 грн |
| 500+ | 6.05 грн |
| 1000+ | 5.36 грн |
| 2000+ | 4.78 грн |
| 5000+ | 4.08 грн |
| TC7SZ05FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 2529 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 6.22 грн |
| 68+ | 4.41 грн |
| 79+ | 3.83 грн |
| 100+ | 3.03 грн |
| 250+ | 2.76 грн |
| 500+ | 2.59 грн |
| 1000+ | 2.41 грн |
| TCR3DM135,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.87 грн |
| TCR3DM135,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 19975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.76 грн |
| 32+ | 9.58 грн |
| 36+ | 8.47 грн |
| 100+ | 6.78 грн |
| 250+ | 6.22 грн |
| 500+ | 5.89 грн |
| 1000+ | 5.52 грн |
| 2500+ | 5.23 грн |
| 5000+ | 5.06 грн |
| TK16J60W5,S1VQ |
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Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 404.06 грн |
| 10+ | 349.66 грн |
| TK16J60W,S1VE |
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Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Description: X35 PB-F POWER MOSFET TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| TB9101FNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
товару немає в наявності
В кошику
од. на суму грн.
| TB9101FNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
товару немає в наявності
В кошику
од. на суму грн.
| TCR5AM33,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
Description: IC REG LINEAR 3.3V 500MA 5DFNB
товару немає в наявності
В кошику
од. на суму грн.
| TCR5AM33,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
Description: IC REG LINEAR 3.3V 500MA 5DFNB
на замовлення 629 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.52 грн |
| 11+ | 28.73 грн |
| 25+ | 26.34 грн |
| 100+ | 18.38 грн |
| 250+ | 16.66 грн |
| 500+ | 13.79 грн |
| TCR5AM105A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Description: IC REG LINEAR 1.05V 500MA 5DFNB
товару немає в наявності
В кошику
од. на суму грн.
| TCR5AM105A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Description: IC REG LINEAR 1.05V 500MA 5DFNB
товару немає в наявності
В кошику
од. на суму грн.
| TCR5AM18,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 5DFNB
Description: IC REG LINEAR 1.8V 500MA 5DFNB
товару немає в наявності
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| TCR5AM18,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 5DFNB
Description: IC REG LINEAR 1.8V 500MA 5DFNB
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| TLP734(D4-C172,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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| SSM6J422TU,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
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| SSM6J422TU,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 2567 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.86 грн |
| 12+ | 26.49 грн |
| 100+ | 19.80 грн |
| 500+ | 14.60 грн |
| 1000+ | 11.28 грн |
| SSM6L820R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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| SSM6L820R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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| 4N26(SHORT,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 200µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 2.5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 200µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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| 4N26(SHORT-LF5,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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| TB6633AFNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
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| TLP2261(D4-TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
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| TLP2261(D4-LF4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
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| SSM6K819R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 28.93 грн |
| SSM6K819R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3028 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 108.78 грн |
| 10+ | 66.37 грн |
| 100+ | 44.28 грн |
| 500+ | 32.65 грн |
| 1000+ | 29.78 грн |
| TPH9R00CQH,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 53.92 грн |
| TPH9R00CQH,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
на замовлення 9325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 182.60 грн |
| 10+ | 113.66 грн |
| 100+ | 78.13 грн |
| 500+ | 59.64 грн |
| RN2116,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
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| RN2116,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
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| RN2116,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
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| RN2116,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
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| RN1108,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| RN1108,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 2865 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.54 грн |
| 25+ | 12.42 грн |
| 100+ | 6.59 грн |
| 500+ | 4.07 грн |
| 1000+ | 2.77 грн |
| RN2106MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Description: TRANS PREBIAS PNP 50V 0.1A VESM
товару немає в наявності
В кошику
од. на суму грн.
| RN2106MFV,L3F(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Description: TRANS PREBIAS PNP 50V 0.1A VESM
на замовлення 3033 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.76 грн |
| 23+ | 13.02 грн |
| 100+ | 7.09 грн |
| 500+ | 4.10 грн |
| 1000+ | 2.79 грн |
| 2000+ | 2.37 грн |
| RN2106,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.96 грн |
| RN2106,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 1SS272TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC-61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 31501 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.65 грн |
| 25+ | 12.05 грн |
| 100+ | 9.92 грн |
| 500+ | 6.93 грн |
| 1000+ | 6.16 грн |
| TLP781(D4GRT6-TC,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781(D4TELS-T6,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781(D4-Y,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP781(D4-Y-TP6,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781(D4-GRH,E) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.










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