Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13584) > Сторінка 164 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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1SS315[U/D] | Toshiba Semiconductor and Storage |
Description: RF DIODE SCHOTTKY 5V USC Current - Max: 30 mA Supplier Device Package: USC Voltage - Peak Reverse (Max): 5V Capacitance @ Vr, F: 0.06pF @ 200mV, 1MHz Operating Temperature: 125°C (TJ) Diode Type: Schottky - Single Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HN1A01FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: ES6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 100mW Operating Temperature: 150°C (TJ) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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HN1A01FE-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 100mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: ES6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA |
на замовлення 7702 шт: термін постачання 21-31 дні (днів) |
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TPH2R408QM,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 120A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH2R408QM,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 120A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 210W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V |
на замовлення 8864 шт: термін постачання 21-31 дні (днів) |
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TPH3R704PC,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 82A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.4V @ 300µA Power Dissipation (Max): 830mW (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TPH3R704PC,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 82A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.4V @ 300µA Power Dissipation (Max): 830mW (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 1435 шт: термін постачання 21-31 дні (днів) |
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RN1911FE,LF(CT | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=IPart Status: Active Supplier Device Package: ES6 Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN1911FE,LF(CT | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=IResistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Part Status: Active Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) Supplier Device Package: ES6 |
на замовлення 3980 шт: термін постачання 21-31 дні (днів) |
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TCR3UG50B,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 300MA 4WCSP-FProtection Features: Inrush Current, Over Current, Thermal Shutdown Voltage Dropout (Max): 0.195V @ 300mA PSRR: 70dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 5V Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Tape & Reel (TR) Supplier Device Package: 4-WCSP-F (0.65x0.65) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR3UG50B,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 300MA 4WCSP-FProtection Features: Inrush Current, Over Current, Thermal Shutdown Voltage Dropout (Max): 0.195V @ 300mA PSRR: 70dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 5V Supplier Device Package: 4-WCSP-F (0.65x0.65) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 8689 шт: термін постачання 21-31 дні (днів) |
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RN2102MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMResistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN2102MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMResistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 15720 шт: термін постачання 21-31 дні (днів) |
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RN2132MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN2132MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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7UL1T00FU,LF | Toshiba Semiconductor and Storage |
Description: IC NAND 1-CIR 2-IN USVCurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF Input Logic Level - Low: 2V ~ 2.48V Input Logic Level - High: 0.1V ~ 0.4V Supplier Device Package: USV Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1T00FU,LF | Toshiba Semiconductor and Storage |
Description: IC NAND 1-CIR 2-IN USVCurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF Input Logic Level - Low: 2V ~ 2.48V Input Logic Level - High: 0.1V ~ 0.4V Supplier Device Package: USV Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 4325 шт: термін постачання 21-31 дні (днів) |
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TLP598GAF | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 150MA 0-400VApproval Agency: UL Operating Temperature: -40°C ~ 85°C Packaging: Tube On-State Resistance (Max): 12 Ohms Voltage - Load: 0 V ~ 400 V Supplier Device Package: 6-DIP Load Current: 150 mA Termination Style: PC Pin Circuit: SPST-NO (1 Form A) Voltage - Input: 1.33VDC Mounting Type: Through Hole Output Type: AC, DC Package / Case: 6-DIP (0.300", 7.62mm) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP223GA(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 120MA 0-400V On-State Resistance (Max): 35 Ohms Voltage - Load: 0 V ~ 400 V Part Status: Active Supplier Device Package: 4-SMD Load Current: 120 mA Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 4-SMD (0.300", 7.62mm) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLP223GA(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 120MA 0-400V On-State Resistance (Max): 35 Ohms Voltage - Load: 0 V ~ 400 V Part Status: Active Supplier Device Package: 4-SMD Load Current: 120 mA Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 4-SMD (0.300", 7.62mm) Packaging: Cut Tape (CT) |
на замовлення 1027 шт: термін постачання 21-31 дні (днів) |
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TLP223J(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 90MA 0-600VApproval Agency: cUL, UL, VDE Operating Temperature: -40°C ~ 110°C On-State Resistance (Max): 60 Ohms Voltage - Load: 0 V ~ 600 V Part Status: Active Supplier Device Package: 4-SMD Load Current: 90 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 4-SMD (0.300", 7.62mm) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLP223J(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 90MA 0-600VApproval Agency: cUL, UL, VDE Operating Temperature: -40°C ~ 110°C On-State Resistance (Max): 60 Ohms Voltage - Load: 0 V ~ 600 V Part Status: Active Supplier Device Package: 4-SMD Load Current: 90 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 4-SMD (0.300", 7.62mm) Packaging: Cut Tape (CT) |
на замовлення 820 шт: термін постачання 21-31 дні (днів) |
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MSZ24V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC SMINIOperating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Supplier Device Package: S-Mini Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Capacitance @ Frequency: 26pF @ 1MHz Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Voltage - Breakdown (Min): 22.8V Unidirectional Channels: 1 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MSZ24V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC SMINIPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Voltage - Breakdown (Min): 22.8V Unidirectional Channels: 1 Supplier Device Package: S-Mini Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Capacitance @ Frequency: 26pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5935 шт: термін постачання 21-31 дні (днів) |
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CUZ24V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC USCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Voltage - Breakdown (Min): 22.8V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Capacitance @ Frequency: 26pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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CUZ24V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC USCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Voltage - Breakdown (Min): 22.8V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Capacitance @ Frequency: 26pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 8756 шт: термін постачання 21-31 дні (днів) |
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CEZ24V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC ESCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Voltage - Breakdown (Min): 22.8V Unidirectional Channels: 1 Supplier Device Package: ESC Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Capacitance @ Frequency: 26pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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CEZ24V,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC ESCPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Voltage - Breakdown (Min): 22.8V Unidirectional Channels: 1 Supplier Device Package: ESC Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Capacitance @ Frequency: 26pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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MUZ24V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC USMPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Voltage - Breakdown (Min): 22.8V Unidirectional Channels: 1 Supplier Device Package: USM Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Capacitance @ Frequency: 26pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MUZ24V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 36.5VC USMPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 36.5V (Typ) Voltage - Breakdown (Min): 22.8V Unidirectional Channels: 1 Supplier Device Package: USM Voltage - Reverse Standoff (Typ): 24V Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Capacitance @ Frequency: 26pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 6002 шт: термін постачання 21-31 дні (днів) |
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CUHZ24V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 25.5VC US2HPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 25.5V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CUHZ24V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 25.5VC US2HPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 25.5V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active |
на замовлення 10147 шт: термін постачання 21-31 дні (днів) |
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TPCA8109(TE12L1,V | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 30V 24A 8SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP293(GB,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOPPackaging: Bulk Package / Case: 6-SMD (4 Leads), Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-MFSOP, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 4209 шт: термін постачання 21-31 дні (днів) |
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TCR2LN30,LSF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN30,LSF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 9500 шт: термін постачання 21-31 дні (днів) |
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TCR2EN30,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2EN30,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
на замовлення 17866 шт: термін постачання 21-31 дні (днів) |
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TCR2LN30,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN30,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 16278 шт: термін постачання 21-31 дні (днів) |
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SSM3K376R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON NCH ID: 4A VDSS: 30Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +12V, -8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSM3K376R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON NCH ID: 4A VDSS: 30Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +12V, -8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 10815 шт: термін постачання 21-31 дні (днів) |
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TB62216FTG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 4.75V-5.25V 48QFNVoltage - Load: 10V ~ 38V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: PWM Current - Output: 2A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: 48-QFN (7x7) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TB62216FTG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 4.75V-5.25V 48QFNPart Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: 48-QFN (7x7) Voltage - Load: 10V ~ 38V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: PWM Current - Output: 2A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3859 шт: термін постачання 21-31 дні (днів) |
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TB67S128FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFNVoltage - Supply: 0V ~ 5.5V Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 85°C (TA) Interface: Parallel Current - Output: 5A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Step Resolution: 1/8, 1/16, 1/32 Motor Type - Stepper: Bipolar Supplier Device Package: 64-VQFN (9x9) Voltage - Load: 6.5V ~ 44V Technology: Power MOSFET Applications: General Purpose |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TB67S128FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFNStep Resolution: 1/8, 1/16, 1/32 Motor Type - Stepper: Bipolar Supplier Device Package: 64-VQFN (9x9) Voltage - Load: 6.5V ~ 44V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 0V ~ 5.5V Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 85°C (TA) Interface: Parallel Current - Output: 5A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 7224 шт: термін постачання 21-31 дні (днів) |
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TPCA8128,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 34A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DF2B6M4BSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DF2B6M4BSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 9233 шт: термін постачання 21-31 дні (днів) |
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TC7SZ05FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOPPackaging: Cut Tape (CT) Features: Open Drain Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Current - Output High, Low: -, 32mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 1184 шт: термін постачання 21-31 дні (днів) |
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TCR3DM135,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.35V 300MA 4-DFNPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.35V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.52V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM135,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.35V 300MA 4-DFNPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.35V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.52V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 19975 шт: термін постачання 21-31 дні (днів) |
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TK16J60W5,S1VQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORVgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P(N) Vgs(th) (Max) @ Id: 4.5V @ 790µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 600 V |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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TK16J60W,S1VE | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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TB9101FNG,EL | Toshiba Semiconductor and Storage |
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TB9101FNG,EL | Toshiba Semiconductor and Storage |
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR5AM33,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 500MA 5DFNB |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR5AM33,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 500MA 5DFNB |
на замовлення 629 шт: термін постачання 21-31 дні (днів) |
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TCR5AM105A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.05V 500MA 5DFNB |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR5AM105A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.05V 500MA 5DFNB |
товару немає в наявності |
В кошику од. на суму грн. |
| 1SS315[U/D] |
Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE SCHOTTKY 5V USC
Current - Max: 30 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 5V
Capacitance @ Vr, F: 0.06pF @ 200mV, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: RF DIODE SCHOTTKY 5V USC
Current - Max: 30 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 5V
Capacitance @ Vr, F: 0.06pF @ 200mV, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| HN1A01FE-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 12.66 грн |
| HN1A01FE-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
на замовлення 7702 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.68 грн |
| 11+ | 29.47 грн |
| 100+ | 22.02 грн |
| 500+ | 16.24 грн |
| 1000+ | 12.55 грн |
| 2000+ | 11.44 грн |
| TPH2R408QM,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 52.41 грн |
| TPH2R408QM,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
на замовлення 8864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.92 грн |
| 10+ | 116.98 грн |
| 100+ | 80.14 грн |
| 500+ | 60.43 грн |
| 1000+ | 56.35 грн |
| TPH3R704PC,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPH3R704PC,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 1435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.25 грн |
| 10+ | 79.10 грн |
| 100+ | 53.04 грн |
| 500+ | 39.31 грн |
| 1000+ | 35.94 грн |
| RN1911FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RN1911FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Part Status: Active
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Supplier Device Package: ES6
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Part Status: Active
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Supplier Device Package: ES6
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.44 грн |
| 27+ | 11.45 грн |
| 100+ | 5.57 грн |
| 500+ | 4.36 грн |
| 1000+ | 3.03 грн |
| 2000+ | 2.62 грн |
| TCR3UG50B,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.195V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.195V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 7.30 грн |
| TCR3UG50B,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.195V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.195V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 8689 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 12+ | 26.72 грн |
| 25+ | 24.43 грн |
| 100+ | 17.06 грн |
| 250+ | 15.46 грн |
| 500+ | 12.80 грн |
| 1000+ | 9.44 грн |
| 2500+ | 8.65 грн |
| RN2102MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.14 грн |
| RN2102MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 15720 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.69 грн |
| 34+ | 9.01 грн |
| 100+ | 4.83 грн |
| 500+ | 3.56 грн |
| 1000+ | 2.47 грн |
| 2000+ | 2.05 грн |
| RN2132MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Description: TRANS PREBIAS PNP 50V 0.1A VESM
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| RN2132MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Description: TRANS PREBIAS PNP 50V 0.1A VESM
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| 7UL1T00FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC NAND 1-CIR 2-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Description: IC NAND 1-CIR 2-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.18 грн |
| 7UL1T00FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC NAND 1-CIR 2-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC NAND 1-CIR 2-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 4325 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 11.10 грн |
| 44+ | 7.02 грн |
| 50+ | 6.17 грн |
| 100+ | 4.92 грн |
| 250+ | 4.50 грн |
| 500+ | 4.24 грн |
| 1000+ | 3.97 грн |
| TLP598GAF |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 150MA 0-400V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Packaging: Tube
On-State Resistance (Max): 12 Ohms
Voltage - Load: 0 V ~ 400 V
Supplier Device Package: 6-DIP
Load Current: 150 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.33VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
Description: SSR RELAY SPST-NO 150MA 0-400V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Packaging: Tube
On-State Resistance (Max): 12 Ohms
Voltage - Load: 0 V ~ 400 V
Supplier Device Package: 6-DIP
Load Current: 150 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.33VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| TLP223GA(D4TP1,F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 120MA 0-400V
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP223GA(D4TP1,F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
Description: SSR RELAY SPST-NO 120MA 0-400V
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
на замовлення 1027 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.63 грн |
| 10+ | 119.04 грн |
| 25+ | 105.83 грн |
| 50+ | 94.36 грн |
| 100+ | 89.39 грн |
| 250+ | 79.45 грн |
| 500+ | 73.27 грн |
| TLP223J(D4TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 90MA 0-600V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 60 Ohms
Voltage - Load: 0 V ~ 600 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 90 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 90MA 0-600V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 60 Ohms
Voltage - Load: 0 V ~ 600 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 90 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP223J(D4TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 90MA 0-600V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 60 Ohms
Voltage - Load: 0 V ~ 600 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 90 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
Description: SSR RELAY SPST-NO 90MA 0-600V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 60 Ohms
Voltage - Load: 0 V ~ 600 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 90 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
на замовлення 820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.28 грн |
| 10+ | 107.43 грн |
| 25+ | 102.62 грн |
| 50+ | 93.01 грн |
| 100+ | 89.82 грн |
| 250+ | 85.77 грн |
| 500+ | 81.47 грн |
| MSZ24V,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC SMINI
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Description: TVS DIODE 24VWM 36.5VC SMINI
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.42 грн |
| MSZ24V,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TVS DIODE 24VWM 36.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.17 грн |
| 18+ | 17.41 грн |
| 100+ | 8.48 грн |
| 500+ | 6.64 грн |
| 1000+ | 4.61 грн |
| CUZ24V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: TVS DIODE 24VWM 36.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.93 грн |
| 6000+ | 2.48 грн |
| CUZ24V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 24VWM 36.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 8756 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.14 грн |
| 57+ | 5.42 грн |
| 100+ | 3.42 грн |
| CEZ24V,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: TVS DIODE 24VWM 36.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 3.78 грн |
| CEZ24V,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: TVS DIODE 24VWM 36.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.58 грн |
| 20+ | 15.96 грн |
| 100+ | 7.80 грн |
| 500+ | 6.11 грн |
| 1000+ | 4.24 грн |
| 2000+ | 3.68 грн |
| MUZ24V,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TVS DIODE 24VWM 36.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.60 грн |
| 6000+ | 4.11 грн |
| MUZ24V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 24VWM 36.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 6002 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.96 грн |
| 17+ | 18.10 грн |
| 100+ | 8.82 грн |
| 500+ | 6.91 грн |
| 1000+ | 4.80 грн |
| CUHZ24V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 25.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 24VWM 25.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.97 грн |
| 6000+ | 6.98 грн |
| 9000+ | 6.62 грн |
| CUHZ24V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 25.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 24VWM 25.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
на замовлення 10147 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 15+ | 21.38 грн |
| 100+ | 13.55 грн |
| 500+ | 9.54 грн |
| 1000+ | 8.51 грн |
| TPCA8109(TE12L1,V |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 24A 8SOP
Description: MOSFET P-CH 30V 24A 8SOP
товару немає в наявності
В кошику
од. на суму грн.
| TLP293(GB,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 4209 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.23 грн |
| 12+ | 27.56 грн |
| 175+ | 18.50 грн |
| 525+ | 15.30 грн |
| 1050+ | 14.24 грн |
| 2100+ | 13.34 грн |
| TCR2LN30,LSF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN30,LSF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 9500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.69 грн |
| 38+ | 8.25 грн |
| 43+ | 7.24 грн |
| 100+ | 5.76 грн |
| 250+ | 5.28 грн |
| 500+ | 4.98 грн |
| 1000+ | 4.67 грн |
| 2500+ | 4.42 грн |
| 5000+ | 4.26 грн |
| TCR2EN30,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.05 грн |
| TCR2EN30,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
на замовлення 17866 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.48 грн |
| 35+ | 8.86 грн |
| 40+ | 7.79 грн |
| 100+ | 6.23 грн |
| 250+ | 5.71 грн |
| 500+ | 5.39 грн |
| 1000+ | 5.05 грн |
| 2500+ | 4.78 грн |
| 5000+ | 4.71 грн |
| TCR2LN30,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2LN30,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 16278 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.48 грн |
| 35+ | 8.86 грн |
| 40+ | 7.79 грн |
| 100+ | 6.23 грн |
| 250+ | 5.71 грн |
| 500+ | 5.39 грн |
| 1000+ | 5.05 грн |
| 2500+ | 4.78 грн |
| 5000+ | 4.71 грн |
| SSM3K376R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.69 грн |
| 6000+ | 7.61 грн |
| 9000+ | 7.23 грн |
| SSM3K376R,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 10815 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.85 грн |
| 14+ | 23.14 грн |
| 100+ | 14.70 грн |
| 500+ | 10.37 грн |
| 1000+ | 9.26 грн |
| TB62216FTG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 48-QFN (7x7)
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 48-QFN (7x7)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 89.31 грн |
| TB62216FTG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3859 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.51 грн |
| 10+ | 163.86 грн |
| 25+ | 154.61 грн |
| 100+ | 123.63 грн |
| 250+ | 116.08 грн |
| 500+ | 101.57 грн |
| 1000+ | 82.78 грн |
| TB67S128FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Step Resolution: 1/8, 1/16, 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 64-VQFN (9x9)
Voltage - Load: 6.5V ~ 44V
Technology: Power MOSFET
Applications: General Purpose
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Step Resolution: 1/8, 1/16, 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 64-VQFN (9x9)
Voltage - Load: 6.5V ~ 44V
Technology: Power MOSFET
Applications: General Purpose
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB67S128FTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Step Resolution: 1/8, 1/16, 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 64-VQFN (9x9)
Voltage - Load: 6.5V ~ 44V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Step Resolution: 1/8, 1/16, 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 64-VQFN (9x9)
Voltage - Load: 6.5V ~ 44V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 7224 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 512.23 грн |
| 10+ | 381.02 грн |
| 25+ | 353.01 грн |
| 100+ | 302.35 грн |
| 250+ | 288.56 грн |
| 500+ | 280.25 грн |
| 1000+ | 268.93 грн |
| TPCA8128,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DF2B6M4BSL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DF2B6M4BSL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 9233 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.17 грн |
| 21+ | 15.19 грн |
| 50+ | 10.92 грн |
| 100+ | 8.94 грн |
| 500+ | 6.63 грн |
| TC7SZ05FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 1184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.93 грн |
| 62+ | 4.96 грн |
| 71+ | 4.34 грн |
| 100+ | 3.43 грн |
| 250+ | 3.12 грн |
| 500+ | 2.94 грн |
| 1000+ | 2.74 грн |
| TCR3DM135,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.99 грн |
| TCR3DM135,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 19975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 15.07 грн |
| 32+ | 9.77 грн |
| 36+ | 8.64 грн |
| 100+ | 6.92 грн |
| 250+ | 6.35 грн |
| 500+ | 6.01 грн |
| 1000+ | 5.63 грн |
| 2500+ | 5.34 грн |
| 5000+ | 5.16 грн |
| TK16J60W5,S1VQ |
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Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 446.42 грн |
| 25+ | 250.20 грн |
| TK16J60W,S1VE |
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Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Description: X35 PB-F POWER MOSFET TRANSISTOR
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 417.87 грн |
| TB9101FNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TB9101FNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
товару немає в наявності
В кошику
од. на суму грн.
| TCR5AM33,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
Description: IC REG LINEAR 3.3V 500MA 5DFNB
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCR5AM33,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
Description: IC REG LINEAR 3.3V 500MA 5DFNB
на замовлення 629 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.27 грн |
| 11+ | 29.32 грн |
| 25+ | 26.88 грн |
| 100+ | 18.76 грн |
| 250+ | 17.00 грн |
| 500+ | 14.07 грн |
| TCR5AM105A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Description: IC REG LINEAR 1.05V 500MA 5DFNB
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCR5AM105A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Description: IC REG LINEAR 1.05V 500MA 5DFNB
товару немає в наявності
В кошику
од. на суму грн.


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