Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13538) > Сторінка 167 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TLP781(BL-LF6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781(D4-FUN,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
DF2S6M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DF2S6M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 39676 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DF2B6M4ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.15pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DF2B6M4ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.15pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 5661 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CUHZ36V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 41.2VC US2HPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 23A (8/20µs) Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 34V Voltage - Clamping (Max) @ Ipp: 41.2V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CUHZ36V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 41.2VC US2HPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 23A (8/20µs) Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 34V Voltage - Clamping (Max) @ Ipp: 41.2V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No |
на замовлення 6907 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TB67S111PG,HJ | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 16DIPPackaging: Tray Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Function: Driver Current - Output: 1.5A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 0V ~ 80V Supplier Device Package: 16-DIP Motor Type - Stepper: Unipolar Part Status: Active |
на замовлення 1269 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR3DF39,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.9V 300MA SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR3DF39,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.9V 300MA SMV |
на замовлення 5592 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TCR2EN11,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.1V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCR2EN11,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.1V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCR2EN115,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.5V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCR2EN115,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.5V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| CLS01(T6LSONY,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 10A L-FLAT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
RN2418,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2418,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2416,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN2416,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK1R4F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A TO220SMPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK1R4F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A TO220SMPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CUHZ8V2,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8.2VWM 8.5VC US2HPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 450pF @ 1MHz Current - Peak Pulse (10/1000µs): 68A (8/20µs) Voltage - Reverse Standoff (Typ): 8.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Power - Peak Pulse: 1900W (1.9kW) Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
CUHZ8V2,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8.2VWM 8.5VC US2HPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 450pF @ 1MHz Current - Peak Pulse (10/1000µs): 68A (8/20µs) Voltage - Reverse Standoff (Typ): 8.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Power - Peak Pulse: 1900W (1.9kW) Power Line Protection: No |
на замовлення 5375 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
2SC4604,T6F(M | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 3A TO-92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
2SC4604,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 3A TO-92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
2SC4604,F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 3A TO-92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TODX2350A(F) | Toshiba Semiconductor and Storage |
Description: TXRX MOD OPTICAL 10MBPS 650NMPackaging: Bulk Connector Type: JIS F07 Wavelength: 650nm Mounting Type: Through Hole Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Data Rate: 10Mbps |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
|
TLP2395(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR PSH PULL 6MFSOP-5 Packaging: Tube Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TLP2398(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TLP2398(E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TLP2395(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SSM6L56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 48800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
SSM6L56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 49075 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TLX9185(TOJGBTLF(O | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLX9291(TOJGBTLF(O | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
|
TCR3RM29A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 2.9V 300MA 4DFNC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
TCR3RM29A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 2.9V 300MA 4DFNC |
на замовлення 8900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
TCR3RM29A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.9V 300MA 4DFNC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
TCR3RM29A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.9V 300MA 4DFNC |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TCR2EN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 3.3V 200MA 4DFNC |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCR2EN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 3.3V 200MA 4DFNC |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
|
TC78B011FTG,EL | Toshiba Semiconductor and Storage |
Description: 3-PHASE BRUSHLESS MOTOR CONTROLLPackaging: Tape & Reel (TR) Package / Case: 36-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 240mA Interface: I2C Operating Temperature: -40°C ~ 105°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 27V Applications: General Purpose Technology: NMOS Supplier Device Package: 36-WQFN (5x5) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TC78B011FTG,EL | Toshiba Semiconductor and Storage |
Description: 3-PHASE BRUSHLESS MOTOR CONTROLLPackaging: Cut Tape (CT) Package / Case: 36-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 240mA Interface: I2C Operating Temperature: -40°C ~ 105°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 27V Applications: General Purpose Technology: NMOS Supplier Device Package: 36-WQFN (5x5) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 6255 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TLP759(D4MBIMT1J,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Supplier Device Package: 8-DIP Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP759(D4KEBIMT1JF | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP759(D4IM-T1,J,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Supplier Device Package: 8-DIP Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TB67S261FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TB67S261FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TB67S269FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1 ~ 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TB67S269FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1 ~ 1/32 |
на замовлення 3974 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK12J60W,S1VE(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A TO3P Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TK11S10N1L,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 11A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TCK207AN,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 21.5mOhm Input Type: Non-Inverting Voltage - Load: 0.75V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-DFNA (1.2x1.2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCK207AN,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 21.5mOhm Input Type: Non-Inverting Voltage - Load: 0.75V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-DFNA (1.2x1.2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 9868 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
|
TCK127BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCK127BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 27504 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCK128BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TCK128BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 1429 шт: термін постачання 21-31 дні (днів) |
|
| TLP781(BL-LF6,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781(D4-FUN,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| DF2S6M4SL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.93 грн |
| 20000+ | 2.56 грн |
| DF2S6M4SL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 39676 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.09 грн |
| 30+ | 10.18 грн |
| 100+ | 6.33 грн |
| 500+ | 4.35 грн |
| 1000+ | 3.84 грн |
| 2000+ | 3.41 грн |
| 5000+ | 2.89 грн |
| DF2B6M4ASL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF2B6M4ASL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 5661 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.31 грн |
| 22+ | 13.62 грн |
| 100+ | 8.52 грн |
| 500+ | 5.91 грн |
| 1000+ | 5.24 грн |
| 2000+ | 4.67 грн |
| 5000+ | 3.99 грн |
| CUHZ36V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 41.2VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34V
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Description: TVS DIODE 36VWM 41.2VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34V
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.51 грн |
| 6000+ | 5.81 грн |
| CUHZ36V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 41.2VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34V
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Description: TVS DIODE 36VWM 41.2VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34V
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
на замовлення 6907 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.41 грн |
| 16+ | 19.83 грн |
| 100+ | 13.38 грн |
| 500+ | 9.42 грн |
| 1000+ | 8.40 грн |
| TB67S111PG,HJ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16DIP
Packaging: Tray
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 80V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Part Status: Active
Description: IC MOTOR DRIVER 16DIP
Packaging: Tray
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 80V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Part Status: Active
на замовлення 1269 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 281.29 грн |
| 10+ | 204.87 грн |
| 25+ | 188.44 грн |
| 100+ | 159.89 грн |
| 250+ | 151.81 грн |
| 500+ | 146.94 грн |
| 1000+ | 140.59 грн |
| TCR3DF39,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 300MA SMV
Description: IC REG LINEAR 3.9V 300MA SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.89 грн |
| TCR3DF39,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 300MA SMV
Description: IC REG LINEAR 3.9V 300MA SMV
на замовлення 5592 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.30 грн |
| 12+ | 26.56 грн |
| 25+ | 23.23 грн |
| 100+ | 14.10 грн |
| 250+ | 11.67 грн |
| 500+ | 9.34 грн |
| 1000+ | 7.04 грн |
| TCR2EN11,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
Description: LDO REG VOUT=1.1V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.93 грн |
| TCR2EN11,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
Description: LDO REG VOUT=1.1V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.30 грн |
| 14+ | 22.45 грн |
| 25+ | 20.23 грн |
| 100+ | 13.13 грн |
| 250+ | 11.06 грн |
| 500+ | 8.99 грн |
| 1000+ | 6.80 грн |
| 2500+ | 6.12 грн |
| 5000+ | 5.78 грн |
| TCR2EN115,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.93 грн |
| TCR2EN115,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.30 грн |
| 14+ | 22.45 грн |
| 25+ | 20.23 грн |
| 100+ | 13.13 грн |
| 250+ | 11.06 грн |
| 500+ | 8.99 грн |
| 1000+ | 6.80 грн |
| 2500+ | 6.12 грн |
| 5000+ | 5.78 грн |
| CLS01(T6LSONY,Q) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 10A L-FLAT
Description: DIODE SCHOTTKY 30V 10A L-FLAT
товару немає в наявності
В кошику
од. на суму грн.
| RN2418,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.13 грн |
| 6000+ | 3.58 грн |
| RN2418,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.20 грн |
| RN2416,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.64 грн |
| 6000+ | 4.02 грн |
| RN2416,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.53 грн |
| 23+ | 13.09 грн |
| 100+ | 8.19 грн |
| 500+ | 5.67 грн |
| 1000+ | 5.02 грн |
| TK1R4F04PB,LXGQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 84.33 грн |
| TK1R4F04PB,LXGQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.32 грн |
| 10+ | 154.59 грн |
| 100+ | 107.69 грн |
| 500+ | 82.25 грн |
| CUHZ8V2,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.38 грн |
| CUHZ8V2,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
на замовлення 5375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.75 грн |
| 18+ | 17.14 грн |
| 100+ | 11.92 грн |
| 500+ | 8.37 грн |
| 1000+ | 7.46 грн |
| 2SC4604,T6F(M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4604,T6F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4604,F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| TODX2350A(F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(TP7,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP2395(E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP2398(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP2398(E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP2395(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| SSM6L56FE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 48800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 4.59 грн |
| 8000+ | 4.00 грн |
| 12000+ | 3.78 грн |
| 20000+ | 3.32 грн |
| 28000+ | 3.18 грн |
| 40000+ | 3.05 грн |
| SSM6L56FE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 49075 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.31 грн |
| 23+ | 13.47 грн |
| 100+ | 8.44 грн |
| 500+ | 5.86 грн |
| 1000+ | 5.19 грн |
| 2000+ | 4.63 грн |
| TLX9185(TOJGBTLF(O |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLX9291(TOJGBTLF(O |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM29A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
Description: LDO REG 2.9V 300MA 4DFNC
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM29A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
Description: LDO REG 2.9V 300MA 4DFNC
на замовлення 8900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.41 грн |
| 12+ | 26.26 грн |
| 25+ | 24.00 грн |
| 100+ | 16.77 грн |
| 250+ | 15.19 грн |
| 500+ | 12.57 грн |
| 1000+ | 9.28 грн |
| 2500+ | 8.50 грн |
| 5000+ | 7.99 грн |
| TCR3RM29A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
Description: IC REG LINEAR 2.9V 300MA 4DFNC
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM29A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
Description: IC REG LINEAR 2.9V 300MA 4DFNC
на замовлення 275 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.19 грн |
| 12+ | 26.71 грн |
| 25+ | 24.45 грн |
| 100+ | 17.08 грн |
| 250+ | 15.49 грн |
| TCR2EN10,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 3.3V 200MA 4DFNC
Description: LDO REG 3.3V 200MA 4DFNC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.37 грн |
| TCR2EN10,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 3.3V 200MA 4DFNC
Description: LDO REG 3.3V 200MA 4DFNC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.97 грн |
| 15+ | 20.28 грн |
| 25+ | 18.32 грн |
| 100+ | 11.90 грн |
| 250+ | 10.02 грн |
| 500+ | 8.14 грн |
| 1000+ | 6.16 грн |
| 2500+ | 5.54 грн |
| 5000+ | 5.23 грн |
| TC78B011FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
товару немає в наявності
В кошику
од. на суму грн.
| TC78B011FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 6255 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.28 грн |
| 10+ | 124.36 грн |
| 25+ | 113.73 грн |
| 100+ | 95.75 грн |
| 250+ | 90.51 грн |
| 500+ | 87.35 грн |
| 1000+ | 83.36 грн |
| 2500+ | 80.66 грн |
| TLP759(D4MBIMT1J,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP759(D4KEBIMT1JF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP759(D4IM-T1,J,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TB67S261FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
В кошику
од. на суму грн.
| TB67S261FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
на замовлення 170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 250.98 грн |
| 10+ | 154.44 грн |
| 25+ | 131.60 грн |
| 100+ | 99.21 грн |
| TB67S269FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
товару немає в наявності
В кошику
од. на суму грн.
| TB67S269FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
на замовлення 3974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 271.96 грн |
| 10+ | 167.83 грн |
| 25+ | 143.31 грн |
| 100+ | 108.39 грн |
| 250+ | 95.55 грн |
| 500+ | 87.63 грн |
| 1000+ | 79.66 грн |
| TK12J60W,S1VE(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Description: MOSFET N-CH 600V 11.5A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| TK11S10N1L,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Description: MOSFET N-CH 100V 11A DPAK
товару немає в наявності
В кошику
од. на суму грн.
| TCK207AN,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 22.98 грн |
| TCK207AN,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 9868 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.28 грн |
| 10+ | 35.17 грн |
| 25+ | 31.58 грн |
| 100+ | 25.95 грн |
| 250+ | 24.18 грн |
| 500+ | 23.12 грн |
| 1000+ | 21.88 грн |
| 2500+ | 20.97 грн |
| TCK127BG,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.57 грн |
| 10000+ | 7.09 грн |
| 15000+ | 6.99 грн |
| 25000+ | 6.46 грн |
| TCK127BG,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 27504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.43 грн |
| 25+ | 12.42 грн |
| 28+ | 11.01 грн |
| 100+ | 8.88 грн |
| 250+ | 8.19 грн |
| 500+ | 7.77 грн |
| 1000+ | 7.30 грн |
| 2500+ | 6.94 грн |
| TCK128BG,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TCK128BG,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.73 грн |
| 11+ | 28.58 грн |
| 25+ | 23.53 грн |
| 100+ | 16.70 грн |
| 250+ | 14.06 грн |
| 500+ | 12.44 грн |
| 1000+ | 10.89 грн |













.jpg)

