Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 167 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
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| TLP781(D4-Y-TP6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781(D4-GRH,E) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781(BL-LF6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781(D4-FUN,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DF2S6M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DF2S6M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 39640 шт: термін постачання 21-31 дні (днів) |
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DF2B6M4ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.15pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DF2B6M4ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.15pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 5661 шт: термін постачання 21-31 дні (днів) |
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CUHZ36V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 41.2VC US2HVoltage - Breakdown (Min): 34V Unidirectional Channels: 1 Supplier Device Package: US2H Voltage - Reverse Standoff (Typ): 36V Current - Peak Pulse (10/1000µs): 23A (8/20µs) Capacitance @ Frequency: 105pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 2100W (2.1kW) Voltage - Clamping (Max) @ Ipp: 41.2V (Typ) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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CUHZ36V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 36VWM 41.2VC US2HPower Line Protection: No Power - Peak Pulse: 2100W (2.1kW) Voltage - Clamping (Max) @ Ipp: 41.2V (Typ) Voltage - Breakdown (Min): 34V Unidirectional Channels: 1 Supplier Device Package: US2H Voltage - Reverse Standoff (Typ): 36V Current - Peak Pulse (10/1000µs): 23A (8/20µs) Capacitance @ Frequency: 105pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 6907 шт: термін постачання 21-31 дні (днів) |
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TB67S111PG,HJ | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 16DIPPart Status: Active Motor Type - Stepper: Unipolar Supplier Device Package: 16-DIP Voltage - Load: 0V ~ 80V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (2) Operating Temperature: -20°C ~ 85°C (TA) Interface: Parallel Current - Output: 1.5A Function: Driver Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tray |
на замовлення 1269 шт: термін постачання 21-31 дні (днів) |
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TCR3DF39,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.9V 300MA SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF39,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.9V 300MA SMV |
на замовлення 5592 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN11,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.1V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN11,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.1V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN115,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.5V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN115,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.5V IOUT=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| CLS01(T6LSONY,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 10A L-FLAT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RN2418,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIQualification: AEC-Q101 Grade: Automotive Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2418,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIQualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 Resistor - Base (R1): 47 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2416,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2416,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TK1R4F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A TO220SMInput Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220SM(W) Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V Current - Continuous Drain (Id) @ 25°C: 160A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TK1R4F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A TO220SMInput Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220SM(W) Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V Current - Continuous Drain (Id) @ 25°C: 160A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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CUHZ8V2,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8.2VWM 8.5VC US2HPower Line Protection: No Power - Peak Pulse: 1900W (1.9kW) Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Voltage - Breakdown (Min): 7.7V Unidirectional Channels: 1 Supplier Device Package: US2H Voltage - Reverse Standoff (Typ): 8.2V Current - Peak Pulse (10/1000µs): 68A (8/20µs) Capacitance @ Frequency: 450pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHZ8V2,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8.2VWM 8.5VC US2HPower Line Protection: No Power - Peak Pulse: 1900W (1.9kW) Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Voltage - Breakdown (Min): 7.7V Unidirectional Channels: 1 Supplier Device Package: US2H Voltage - Reverse Standoff (Typ): 8.2V Current - Peak Pulse (10/1000µs): 68A (8/20µs) Capacitance @ Frequency: 450pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 5375 шт: термін постачання 21-31 дні (днів) |
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2SC4604,T6F(M | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 3A TO-92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC4604,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 3A TO-92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC4604,F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 3A TO-92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TODX2350A(F) | Toshiba Semiconductor and Storage |
Description: TXRX MOD OPTICAL 10MBPS 650NMData Rate: 10Mbps Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Mounting Type: Through Hole Wavelength: 650nm Connector Type: JIS F07 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP2395(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR PSH PULL 6MFSOP-5 Current - Output / Channel: 25 mA Number of Channels: 1 Part Status: Active Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 15ns, 12ns Supplier Device Package: 6-SO, 5 Lead Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 20mA Voltage - Isolation: 3750Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.5V Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP2398(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 6-SOCurrent - Output / Channel: 25 mA Number of Channels: 1 Part Status: Active Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 15ns, 12ns Supplier Device Package: 6-SO, 5 Lead Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 20mA Voltage - Isolation: 3750Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.5V Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP2398(E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 6-SOSupplier Device Package: 6-SO, 5 Lead Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 20mA Voltage - Isolation: 3750Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.5V Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Packaging: Tape & Reel (TR) Current - Output / Channel: 25 mA Number of Channels: 1 Part Status: Active Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 15ns, 12ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP2395(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.5V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM6L56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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SSM6L56FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 37222 шт: термін постачання 21-31 дні (днів) |
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| TLX9185(TOJGBTLF(O | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLX9291(TOJGBTLF(O | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TCR3RM29A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 2.9V 300MA 4DFNC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM29A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 2.9V 300MA 4DFNC |
на замовлення 8900 шт: термін постачання 21-31 дні (днів) |
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TCR3RM29A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.9V 300MA 4DFNC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM29A,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.9V 300MA 4DFNC |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 3.3V 200MA 4DFNC |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 3.3V 200MA 4DFNC |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TC78B011FTG,EL | Toshiba Semiconductor and Storage |
Description: 3-PHASE BRUSHLESS MOTOR CONTROLLPackaging: Tape & Reel (TR) Package / Case: 36-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 240mA Interface: I2C Operating Temperature: -40°C ~ 105°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 27V Applications: General Purpose Technology: NMOS Supplier Device Package: 36-WQFN (5x5) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TC78B011FTG,EL | Toshiba Semiconductor and Storage |
Description: 3-PHASE BRUSHLESS MOTOR CONTROLLPackaging: Cut Tape (CT) Package / Case: 36-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 240mA Interface: I2C Operating Temperature: -40°C ~ 105°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 27V Applications: General Purpose Technology: NMOS Supplier Device Package: 36-WQFN (5x5) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 6136 шт: термін постачання 21-31 дні (днів) |
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| TLP759(D4MBIMT1J,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Supplier Device Package: 8-DIP Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP759(D4KEBIMT1JF | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP759(D4IM-T1,J,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Supplier Device Package: 8-DIP Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TB67S261FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNStep Resolution: 1, 1/2, 1/4 Motor Type - Stepper: Bipolar Supplier Device Package: 48-WQFN (7x7) Voltage - Load: 10V ~ 47V Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 2A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Packaging: Tape & Reel (TR) Technology: Power MOSFET |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TB67S261FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNStep Resolution: 1, 1/2, 1/4 Motor Type - Stepper: Bipolar Supplier Device Package: 48-WQFN (7x7) Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 2A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Packaging: Cut Tape (CT) Voltage - Load: 10V ~ 47V |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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TB67S269FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNVoltage - Load: 10V ~ 47V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 2A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Packaging: Tape & Reel (TR) Motor Type - Stepper: Bipolar Supplier Device Package: 48-WQFN (7x7) Step Resolution: 1 ~ 1/32 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TB67S269FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNStep Resolution: 1 ~ 1/32 Motor Type - Stepper: Bipolar Supplier Device Package: 48-WQFN (7x7) Voltage - Load: 10V ~ 47V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 2A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3974 шт: термін постачання 21-31 дні (днів) |
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TK12J60W,S1VE(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A TO3P Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P(N) Vgs(th) (Max) @ Id: 3.7V @ 600µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TK11S10N1L,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 11A DPAK |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
| TCK207AN,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 21.5mOhm Input Type: Non-Inverting Voltage - Load: 0.75V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-DFNA (1.2x1.2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TCK207AN,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 21.5mOhm Input Type: Non-Inverting Voltage - Load: 0.75V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-DFNA (1.2x1.2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 9868 шт: термін постачання 21-31 дні (днів) |
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TCK127BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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TCK127BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 27504 шт: термін постачання 21-31 дні (днів) |
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| TLP781(D4-Y-TP6,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781(D4-GRH,E) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781(BL-LF6,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781(D4-FUN,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| DF2S6M4SL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.99 грн |
| 20000+ | 2.61 грн |
| DF2S6M4SL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 39640 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.44 грн |
| 30+ | 10.38 грн |
| 100+ | 6.46 грн |
| 500+ | 4.44 грн |
| 1000+ | 3.92 грн |
| 2000+ | 3.48 грн |
| 5000+ | 2.95 грн |
| DF2B6M4ASL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DF2B6M4ASL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 5661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.79 грн |
| 22+ | 13.90 грн |
| 100+ | 8.70 грн |
| 500+ | 6.03 грн |
| 1000+ | 5.35 грн |
| 2000+ | 4.77 грн |
| 5000+ | 4.07 грн |
| CUHZ36V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 41.2VC US2H
Voltage - Breakdown (Min): 34V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Description: TVS DIODE 36VWM 41.2VC US2H
Voltage - Breakdown (Min): 34V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.64 грн |
| 6000+ | 5.93 грн |
| CUHZ36V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 41.2VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Voltage - Breakdown (Min): 34V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: TVS DIODE 36VWM 41.2VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Voltage - Breakdown (Min): 34V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 6907 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.10 грн |
| 16+ | 20.23 грн |
| 100+ | 13.65 грн |
| 500+ | 9.61 грн |
| 1000+ | 8.58 грн |
| TB67S111PG,HJ |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16DIP
Part Status: Active
Motor Type - Stepper: Unipolar
Supplier Device Package: 16-DIP
Voltage - Load: 0V ~ 80V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.5A
Function: Driver
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tray
Description: IC MOTOR DRIVER 16DIP
Part Status: Active
Motor Type - Stepper: Unipolar
Supplier Device Package: 16-DIP
Voltage - Load: 0V ~ 80V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.5A
Function: Driver
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tray
на замовлення 1269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 287.04 грн |
| 10+ | 209.06 грн |
| 25+ | 192.30 грн |
| 100+ | 163.16 грн |
| 250+ | 154.92 грн |
| 500+ | 149.95 грн |
| 1000+ | 143.47 грн |
| TCR3DF39,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 300MA SMV
Description: IC REG LINEAR 3.9V 300MA SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 7.03 грн |
| TCR3DF39,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 300MA SMV
Description: IC REG LINEAR 3.9V 300MA SMV
на замовлення 5592 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.06 грн |
| 12+ | 27.11 грн |
| 25+ | 23.70 грн |
| 100+ | 14.39 грн |
| 250+ | 11.91 грн |
| 500+ | 9.53 грн |
| 1000+ | 7.19 грн |
| TCR2EN11,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
Description: LDO REG VOUT=1.1V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 6.05 грн |
| TCR2EN11,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
Description: LDO REG VOUT=1.1V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.92 грн |
| 14+ | 22.91 грн |
| 25+ | 20.65 грн |
| 100+ | 13.40 грн |
| 250+ | 11.29 грн |
| 500+ | 9.17 грн |
| 1000+ | 6.94 грн |
| 2500+ | 6.24 грн |
| 5000+ | 5.90 грн |
| TCR2EN115,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 6.05 грн |
| TCR2EN115,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.92 грн |
| 14+ | 22.91 грн |
| 25+ | 20.65 грн |
| 100+ | 13.40 грн |
| 250+ | 11.29 грн |
| 500+ | 9.17 грн |
| 1000+ | 6.94 грн |
| 2500+ | 6.24 грн |
| 5000+ | 5.90 грн |
| CLS01(T6LSONY,Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 10A L-FLAT
Description: DIODE SCHOTTKY 30V 10A L-FLAT
товару немає в наявності
В кошику
од. на суму грн.
| RN2418,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.21 грн |
| 6000+ | 3.65 грн |
| RN2418,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.62 грн |
| RN2416,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.74 грн |
| 6000+ | 4.11 грн |
| RN2416,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.99 грн |
| 23+ | 13.36 грн |
| 100+ | 8.35 грн |
| 500+ | 5.79 грн |
| 1000+ | 5.13 грн |
| TK1R4F04PB,LXGQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 86.05 грн |
| TK1R4F04PB,LXGQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 251.36 грн |
| 10+ | 157.75 грн |
| 100+ | 109.89 грн |
| 500+ | 83.93 грн |
| CUHZ8V2,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Power Line Protection: No
Power - Peak Pulse: 1900W (1.9kW)
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Voltage - Breakdown (Min): 7.7V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 8.2V
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Capacitance @ Frequency: 450pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: TVS DIODE 8.2VWM 8.5VC US2H
Power Line Protection: No
Power - Peak Pulse: 1900W (1.9kW)
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Voltage - Breakdown (Min): 7.7V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 8.2V
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Capacitance @ Frequency: 450pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.49 грн |
| CUHZ8V2,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Power Line Protection: No
Power - Peak Pulse: 1900W (1.9kW)
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Voltage - Breakdown (Min): 7.7V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 8.2V
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Capacitance @ Frequency: 450pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: TVS DIODE 8.2VWM 8.5VC US2H
Power Line Protection: No
Power - Peak Pulse: 1900W (1.9kW)
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Voltage - Breakdown (Min): 7.7V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 8.2V
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Capacitance @ Frequency: 450pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 5375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.34 грн |
| 18+ | 17.49 грн |
| 100+ | 12.16 грн |
| 500+ | 8.54 грн |
| 1000+ | 7.62 грн |
| 2SC4604,T6F(M |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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| 2SC4604,T6F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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В кошику
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| 2SC4604,F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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| TODX2350A(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 10MBPS 650NM
Data Rate: 10Mbps
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Mounting Type: Through Hole
Wavelength: 650nm
Connector Type: JIS F07
Packaging: Bulk
Description: TXRX MOD OPTICAL 10MBPS 650NM
Data Rate: 10Mbps
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Mounting Type: Through Hole
Wavelength: 650nm
Connector Type: JIS F07
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
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| TLP781F(TP7,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
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В кошику
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| TLP2395(E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tube
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tube
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| TLP2398(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tape & Reel (TR)
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В кошику
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| TLP2398(E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
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од. на суму грн.
| TLP2395(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
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| SSM6L56FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 4.73 грн |
| 8000+ | 4.11 грн |
| 12000+ | 3.89 грн |
| 20000+ | 3.41 грн |
| 28000+ | 3.27 грн |
| SSM6L56FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 37222 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.79 грн |
| 22+ | 13.90 грн |
| 100+ | 8.68 грн |
| 500+ | 6.03 грн |
| 1000+ | 5.34 грн |
| 2000+ | 4.76 грн |
| TLX9185(TOJGBTLF(O |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLX9291(TOJGBTLF(O |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM29A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
Description: LDO REG 2.9V 300MA 4DFNC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3RM29A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
Description: LDO REG 2.9V 300MA 4DFNC
на замовлення 8900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.10 грн |
| 12+ | 26.80 грн |
| 25+ | 24.50 грн |
| 100+ | 17.11 грн |
| 250+ | 15.50 грн |
| 500+ | 12.83 грн |
| 1000+ | 9.47 грн |
| 2500+ | 8.68 грн |
| 5000+ | 8.15 грн |
| TCR3RM29A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
Description: IC REG LINEAR 2.9V 300MA 4DFNC
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| TCR3RM29A,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
Description: IC REG LINEAR 2.9V 300MA 4DFNC
на замовлення 275 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.89 грн |
| 12+ | 27.26 грн |
| 25+ | 24.95 грн |
| 100+ | 17.43 грн |
| 250+ | 15.80 грн |
| TCR2EN10,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 3.3V 200MA 4DFNC
Description: LDO REG 3.3V 200MA 4DFNC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.48 грн |
| TCR2EN10,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 3.3V 200MA 4DFNC
Description: LDO REG 3.3V 200MA 4DFNC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TC78B011FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TC78B011FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 6136 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 182.37 грн |
| 10+ | 131.03 грн |
| 25+ | 119.82 грн |
| 100+ | 100.85 грн |
| 250+ | 95.33 грн |
| 500+ | 93.18 грн |
| TLP759(D4MBIMT1J,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
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| TLP759(D4KEBIMT1JF |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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| TLP759(D4IM-T1,J,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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| TB67S261FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-WQFN (7x7)
Voltage - Load: 10V ~ 47V
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Technology: Power MOSFET
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-WQFN (7x7)
Voltage - Load: 10V ~ 47V
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Technology: Power MOSFET
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| TB67S261FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-WQFN (7x7)
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Voltage - Load: 10V ~ 47V
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-WQFN (7x7)
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Voltage - Load: 10V ~ 47V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 256.12 грн |
| 10+ | 157.60 грн |
| 25+ | 134.30 грн |
| 100+ | 101.24 грн |
| TB67S269FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Voltage - Load: 10V ~ 47V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-WQFN (7x7)
Step Resolution: 1 ~ 1/32
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Voltage - Load: 10V ~ 47V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-WQFN (7x7)
Step Resolution: 1 ~ 1/32
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Мінімальне замовлення: 4000 шт
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| TB67S269FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-WQFN (7x7)
Voltage - Load: 10V ~ 47V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 48-WQFN (7x7)
Voltage - Load: 10V ~ 47V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 277.53 грн |
| 10+ | 171.27 грн |
| 25+ | 146.24 грн |
| 100+ | 110.61 грн |
| 250+ | 97.50 грн |
| 500+ | 89.42 грн |
| 1000+ | 81.29 грн |
| TK12J60W,S1VE(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tray
Description: MOSFET N-CH 600V 11.5A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tray
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| TK11S10N1L,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Description: MOSFET N-CH 100V 11A DPAK
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| TCK207AN,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 23.45 грн |
| TCK207AN,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 9868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 52.33 грн |
| 10+ | 35.89 грн |
| 25+ | 32.22 грн |
| 100+ | 26.48 грн |
| 250+ | 24.68 грн |
| 500+ | 23.59 грн |
| 1000+ | 22.33 грн |
| 2500+ | 21.40 грн |
| TCK127BG,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 7.72 грн |
| 10000+ | 7.24 грн |
| 15000+ | 7.14 грн |
| 25000+ | 6.60 грн |
| TCK127BG,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 27504 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.82 грн |
| 25+ | 12.68 грн |
| 28+ | 11.24 грн |
| 100+ | 9.06 грн |
| 250+ | 8.36 грн |
| 500+ | 7.93 грн |
| 1000+ | 7.45 грн |
| 2500+ | 7.08 грн |















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