Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13063) > Сторінка 167 з 218
Фото | Назва | Виробник | Інформація |
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SSM3J378R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SSM3J378R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 16170 шт: термін постачання 21-31 дні (днів) |
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SSM3J35CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CHANNEL 20V 100MA CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V |
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SSM3J35CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CHANNEL 20V 100MA CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V |
на замовлення 6208 шт: термін постачання 21-31 дні (днів) |
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TK065U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=270W F=1MHZ Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.69mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V |
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TK065U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=270W F=1MHZ Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.69mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V |
на замовлення 2013 шт: термін постачання 21-31 дні (днів) |
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SSM3K72KFS,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM3K72KFS,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 5620 шт: термін постачання 21-31 дні (днів) |
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SSM6N62TU,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
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SSM6N62TU,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.8A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
на замовлення 1455 шт: термін постачання 21-31 дні (днів) |
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TPN7R006PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 54A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 630mW (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V |
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TPN7R006PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 54A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 630mW (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V |
на замовлення 5532 шт: термін постачання 21-31 дні (днів) |
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TLP781(Y-TP6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4GRL-LF6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-GB-LF6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(DLT-HR,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(BLL-LF6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4GRH-LF6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-LF6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(TP6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-YH-LF6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 75% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-BLL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(YH-LF6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 75% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-YH-TP6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 75% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-GRL-FD,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4GRH-TP6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-BL-TP6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-GRL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-BL-SD,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TLP781(D4-GR-TP6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товар відсутній |
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TLP781(D4GRLT6TC,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товар відсутній |
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TLP781(D4-GRH,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товар відсутній |
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TLP781(D4-BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товар відсутній |
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TLP781(D4-YH,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 75% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 150% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товар відсутній |
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TLP781(D4-GR-SD,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
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TC7SH00FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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TC7SH00FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 24771 шт: термін постачання 21-31 дні (днів) |
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TC7SZU04FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC INVERTER 1CH 1-INP USV |
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TC7SZU04FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC INVERTER 1CH 1-INP USV |
на замовлення 833 шт: термін постачання 21-31 дні (днів) |
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TC7SH00F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC GATE NAND 1CH 2-INP SMV |
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TC7SH00F,LJ(CT | Toshiba Semiconductor and Storage | Description: IC GATE NAND 1CH 2-INP SMV |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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TC7SET00FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товар відсутній |
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TC7SZ04F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: SMV Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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TC7SZ04F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: SMV Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 25205 шт: термін постачання 21-31 дні (днів) |
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TC7WZ04FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC INVERTER 3CH 3-INP US8 |
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TC7WZ04FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC INVERTER 3CH 3-INP US8 |
на замовлення 2528 шт: термін постачання 21-31 дні (днів) |
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TC7WZ00FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 2CH 2-INP US8 Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 10 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC7WZ00FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 2CH 2-INP US8 Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 10 µA |
на замовлення 8980 шт: термін постачання 21-31 дні (днів) |
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TC7PZ05FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC INVERTER OD 2CH 2-INP US6 |
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TC7PZ05FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC INVERTER OD 2CH 2-INP US6 |
на замовлення 2328 шт: термін постачання 21-31 дні (днів) |
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TC7SET126FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 5.5V USV |
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TC7SET126FU,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUFFER NON-INVERT 5.5V USV |
на замовлення 2065 шт: термін постачання 21-31 дні (днів) |
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CUZ16V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 16VWM 27VC USC |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUZ16V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 16VWM 27VC USC |
на замовлення 5802 шт: термін постачання 21-31 дні (днів) |
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CEZ16V,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 16VWM 27VC ESC |
товар відсутній |
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CEZ16V,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 16VWM 27VC ESC |
на замовлення 7803 шт: термін постачання 21-31 дні (днів) |
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MUZ16V,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 16VWM 27VC USM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MUZ16V,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 16VWM 27VC USM |
на замовлення 5987 шт: термін постачання 21-31 дні (днів) |
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MSZ16V,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 16VWM 27VC SMINI |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM3J378R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.11 грн |
6000+ | 5.56 грн |
SSM3J378R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 16170 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.3 грн |
14+ | 19.93 грн |
100+ | 12.43 грн |
500+ | 7.98 грн |
1000+ | 6.14 грн |
SSM3J35CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
товар відсутній
SSM3J35CT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
на замовлення 6208 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.56 грн |
19+ | 14.6 грн |
100+ | 7.1 грн |
500+ | 5.56 грн |
1000+ | 3.86 грн |
2000+ | 3.35 грн |
5000+ | 3.05 грн |
TK065U65Z,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
товар відсутній
TK065U65Z,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
на замовлення 2013 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 403.11 грн |
10+ | 333.1 грн |
100+ | 277.55 грн |
500+ | 229.83 грн |
1000+ | 206.85 грн |
SSM3K72KFS,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.99 грн |
SSM3K72KFS,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 5620 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.28 грн |
19+ | 14.95 грн |
100+ | 7.54 грн |
500+ | 5.77 грн |
1000+ | 4.28 грн |
SSM6N62TU,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
товар відсутній
SSM6N62TU,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.18 грн |
12+ | 24.84 грн |
100+ | 17.24 грн |
500+ | 12.63 грн |
1000+ | 10.26 грн |
TPN7R006PL,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
товар відсутній
TPN7R006PL,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
на замовлення 5532 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.77 грн |
10+ | 45.11 грн |
100+ | 35.09 грн |
500+ | 27.92 грн |
1000+ | 22.74 грн |
2000+ | 21.41 грн |
TLP781(Y-TP6,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4GRL-LF6,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-GB-LF6,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(DLT-HR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(BLL-LF6,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4GRH-LF6,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-LF6,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(TP6,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-YH-LF6,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-BLL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(YH-LF6,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-YH-TP6,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-GRL-FD,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4GRH-TP6,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-BL-TP6,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-GRL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-BL-SD,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-GR-TP6,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4GRLT6TC,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-GRH,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-BL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-YH,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TLP781(D4-GR-SD,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товар відсутній
TC7SH00FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.02 грн |
6000+ | 3.48 грн |
15000+ | 3.1 грн |
TC7SH00FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 24771 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.56 грн |
18+ | 15.43 грн |
25+ | 13.53 грн |
100+ | 8.23 грн |
250+ | 6.81 грн |
500+ | 5.45 грн |
1000+ | 4.11 грн |
TC7SZU04FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP USV
Description: IC INVERTER 1CH 1-INP USV
товар відсутній
TC7SZU04FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP USV
Description: IC INVERTER 1CH 1-INP USV
на замовлення 833 шт:
термін постачання 21-31 дні (днів)TC7SH00F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Description: IC GATE NAND 1CH 2-INP SMV
товар відсутній
TC7SH00F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Description: IC GATE NAND 1CH 2-INP SMV
на замовлення 20 шт:
термін постачання 21-31 дні (днів)TC7SET00FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
TC7SZ04F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.42 грн |
6000+ | 3.83 грн |
15000+ | 3.41 грн |
TC7SZ04F,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 25205 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.71 грн |
17+ | 17.09 грн |
25+ | 14.89 грн |
100+ | 9.05 грн |
250+ | 7.5 грн |
500+ | 6 грн |
1000+ | 4.52 грн |
TC7WZ04FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP US8
Description: IC INVERTER 3CH 3-INP US8
товар відсутній
TC7WZ04FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP US8
Description: IC INVERTER 3CH 3-INP US8
на замовлення 2528 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.74 грн |
14+ | 21.24 грн |
25+ | 19.13 грн |
100+ | 12.41 грн |
250+ | 10.45 грн |
500+ | 8.49 грн |
1000+ | 6.42 грн |
TC7WZ00FK,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
Description: IC GATE NAND 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.26 грн |
TC7WZ00FK,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
Description: IC GATE NAND 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
на замовлення 8980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.02 грн |
14+ | 20.41 грн |
25+ | 18.43 грн |
100+ | 11.95 грн |
250+ | 10.06 грн |
500+ | 8.17 грн |
1000+ | 6.18 грн |
TC7PZ05FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER OD 2CH 2-INP US6
Description: IC INVERTER OD 2CH 2-INP US6
товар відсутній
TC7PZ05FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER OD 2CH 2-INP US6
Description: IC INVERTER OD 2CH 2-INP US6
на замовлення 2328 шт:
термін постачання 21-31 дні (днів)TC7SET126FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Description: IC BUFFER NON-INVERT 5.5V USV
товар відсутній
TC7SET126FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Description: IC BUFFER NON-INVERT 5.5V USV
на замовлення 2065 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.15 грн |
16+ | 18.34 грн |
25+ | 16.03 грн |
100+ | 9.75 грн |
250+ | 8.07 грн |
500+ | 6.46 грн |
1000+ | 4.87 грн |
CUZ16V,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC USC
Description: TVS DIODE 16VWM 27VC USC
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)CUZ16V,H3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC USC
Description: TVS DIODE 16VWM 27VC USC
на замовлення 5802 шт:
термін постачання 21-31 дні (днів)CEZ16V,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC ESC
Description: TVS DIODE 16VWM 27VC ESC
товар відсутній
CEZ16V,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC ESC
Description: TVS DIODE 16VWM 27VC ESC
на замовлення 7803 шт:
термін постачання 21-31 дні (днів)MUZ16V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC USM
Description: TVS DIODE 16VWM 27VC USM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)MUZ16V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC USM
Description: TVS DIODE 16VWM 27VC USM
на замовлення 5987 шт:
термін постачання 21-31 дні (днів)MSZ16V,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC SMINI
Description: TVS DIODE 16VWM 27VC SMINI
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.24 грн |