Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13460) > Сторінка 174 з 225
| Фото | Назва | Виробник | Інформація |
Доступність |
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RN1104,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K, |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1104,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K, |
на замовлення 4490 шт: термін постачання 21-31 дні (днів) |
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RN1105MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1105MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN1103MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
на замовлення 315 шт: термін постачання 21-31 дні (днів) |
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RN1108MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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RN1108MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM |
на замовлення 31576 шт: термін постачання 21-31 дні (днів) |
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TK5R3E08QM,S1X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 5.3MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
на замовлення 81 шт: термін постачання 21-31 дні (днів) |
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TK3R2A08QM,S4X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220SIS 80V 3.2MOHM |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TK5R1A08QM,S4X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220SIS 80V 5.1MOHMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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TK2R4E08QM,S1X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 2.4MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.2mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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TB62214AFG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOPPackaging: Tape & Reel (TR) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TB62214AFG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 28HSOPPackaging: Cut Tape (CT) Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: DMOS Voltage - Load: 10V ~ 38V Supplier Device Package: 28-HSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP3546A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3.5A 0-100VPackaging: Tape & Reel (TR) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 3.5 A Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 80 mOhms |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP3546A(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3.5A 0-100VPackaging: Cut Tape (CT) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 3.5 A Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 80 mOhms |
на замовлення 2138 шт: термін постачання 21-31 дні (днів) |
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TLP3554(LF1,F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 2.5A 0-40VPackaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 2.5 A Supplier Device Package: 4-SMD Voltage - Load: 0 V ~ 40 V On-State Resistance (Max): 150 mOhms |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| TLP714F(4HWTP,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714F(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714F(D4-MBSTP,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714F(D4HW1TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP714F(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 1Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Number of Channels: 1 Current - Output / Channel: 15 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TBD62308APG,HZ | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 370mOhm Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 16-DIP |
на замовлення 996 шт: термін постачання 21-31 дні (днів) |
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TCR3DM12,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Voltage Dropout (Max): 0.6V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM12,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Voltage Dropout (Max): 0.6V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 39902 шт: термін постачання 21-31 дні (днів) |
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| TLP630(GB-FANUC,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV TRANS W/BASE 6-DIPPackaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RN1415,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1415,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2408,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2408,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| TLP781F(YH,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP108(TPL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 20V Voltage - Forward (Vf) (Typ): 1.57V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-MFSOP, 5 Lead Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP781F(D4FUNBLL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2768(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 20MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SDIP Gull Wing Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2766(TP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TCR3DF285,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.85V 300MA SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF285,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.85V 300MA SMV |
на замовлення 4675 шт: термін постачання 21-31 дні (днів) |
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TCR3DM13,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.3V 300MA 4-DFNPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.3V Control Features: Enable Voltage Dropout (Max): 0.55V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM13,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.3V 300MA 4-DFNPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.3V Control Features: Enable Voltage Dropout (Max): 0.55V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 19615 шт: термін постачання 21-31 дні (днів) |
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TLP3083(F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHPackaging: Box Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Current - Hold (Ih): 600µA Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G07FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 8mA Supplier Device Package: USV Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1G07FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 8mA Supplier Device Package: USV Part Status: Active |
на замовлення 4783 шт: термін постачання 21-31 дні (днів) |
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1SS403E,L3F | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 100MA ESCPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SS403E,L3F | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 100MA ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 7796 шт: термін постачання 21-31 дні (днів) |
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TW048N65C,S1F | Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 48MOHPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.6mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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TW083N65C,S1F | Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 83MOHPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 5V @ 600µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V |
на замовлення 142 шт: термін постачання 21-31 дні (днів) |
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TW045N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 45MOPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V Power Dissipation (Max): 182W (Tc) Vgs(th) (Max) @ Id: 5V @ 6.7mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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TW060N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 60MOPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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TW030N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 30MOPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 5V @ 13mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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CUHZ16V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 16VWM 17VC US2HPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 210pF @ 1MHz Current - Peak Pulse (10/1000µs): 42A (8/20µs) Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHZ16V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 16VWM 17VC US2HPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 210pF @ 1MHz Current - Peak Pulse (10/1000µs): 42A (8/20µs) Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No |
на замовлення 3294 шт: термін постачання 21-31 дні (днів) |
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CUHZ30V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 33.8VC US2HPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 26A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 33.8V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CUHZ30V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 33.8VC US2HPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 26A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 33.8V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No |
на замовлення 1054 шт: термін постачання 21-31 дні (днів) |
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2SA1943-O(S1,F | Toshiba Semiconductor and Storage |
Description: TRANS PNP 230V 15A TO-3PPackaging: Tube Package / Case: TO-3PL Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P(L) Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 150 W |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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TLP240J(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 90MA 0-600V Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 90 mA Approval Agency: CQC, cUL, UL, VDE Supplier Device Package: 4-DIP Part Status: Active Voltage - Load: 0 V ~ 600 V On-State Resistance (Max): 60 Ohms |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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TLP240GA(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 120MA 0-400VPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 120 mA Approval Agency: CSA, CQC, cUL, UL Supplier Device Package: 4-DIP Part Status: Active Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 35 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP240GA(LF1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 120MA 0-400VPackaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 120 mA Approval Agency: CSA, CQC, cUL, UL Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 35 Ohms |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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TLP240G(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 100MA 0-350V Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 100 mA Approval Agency: CQC, cUL, UL VDE Supplier Device Package: 4-DIP Part Status: Active Voltage - Load: 0 V ~ 350 V On-State Resistance (Max): 50 Ohms |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| RN1104,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.22 грн |
| RN1104,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
Description: AUTO AEC-Q SINGLE NPN Q1BSR=47K,
на замовлення 4490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.76 грн |
| 16+ | 20.05 грн |
| 100+ | 11.39 грн |
| 500+ | 7.08 грн |
| 1000+ | 5.42 грн |
| RN1105MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 4.35 грн |
| RN1105MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
Description: AUTO AEC-Q NPN Q1BSR=2.2K, Q1BER
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.58 грн |
| 14+ | 22.49 грн |
| 100+ | 11.94 грн |
| 500+ | 7.37 грн |
| 1000+ | 5.01 грн |
| 2000+ | 4.52 грн |
| RN1103MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
товару немає в наявності
В кошику
од. на суму грн.
| RN1103MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
на замовлення 315 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.70 грн |
| 24+ | 13.21 грн |
| 100+ | 7.19 грн |
| RN1108MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.40 грн |
| 16000+ | 2.01 грн |
| 24000+ | 1.81 грн |
| RN1108MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
на замовлення 31576 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.70 грн |
| 24+ | 13.21 грн |
| 100+ | 7.19 грн |
| 500+ | 4.15 грн |
| 1000+ | 2.83 грн |
| 2000+ | 2.41 грн |
| TK5R3E08QM,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Description: UMOS10 TO-220AB 80V 5.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
на замовлення 81 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 110.24 грн |
| 50+ | 85.32 грн |
| TK3R2A08QM,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 3.2MOHM
Description: UMOS10 TO-220SIS 80V 3.2MOHM
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.67 грн |
| TK5R1A08QM,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 5.1MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Description: UMOS10 TO-220SIS 80V 5.1MOHM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
на замовлення 53 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.07 грн |
| 50+ | 70.60 грн |
| TK2R4E08QM,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Description: UMOS10 TO-220AB 80V 2.4MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 176 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.01 грн |
| 50+ | 173.34 грн |
| 100+ | 148.58 грн |
| TB62214AFG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
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| TB62214AFG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
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| TLP3546A(TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3.5 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3.5 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 194.10 грн |
| TLP3546A(TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3.5 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
Description: SSR RELAY SPST-NO 3.5A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3.5 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 80 mOhms
на замовлення 2138 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 280.09 грн |
| 10+ | 240.54 грн |
| 25+ | 229.74 грн |
| 50+ | 208.19 грн |
| 100+ | 201.06 грн |
| 250+ | 192.00 грн |
| 500+ | 182.37 грн |
| TLP3554(LF1,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2.5 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2.5 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.00 грн |
| 10+ | 212.87 грн |
| 25+ | 189.16 грн |
| 50+ | 168.65 грн |
| 100+ | 159.78 грн |
| TLP714F(4HWTP,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714F(D4-TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714F(D4-MBSTP,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714F(D4HW1TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714(TP,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714(D4-TP,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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| TLP714F(TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 1Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Number of Channels: 1
Current - Output / Channel: 15 mA
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од. на суму грн.
| TBD62308APG,HZ |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
на замовлення 996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.35 грн |
| 25+ | 75.36 грн |
| 100+ | 59.96 грн |
| 500+ | 44.65 грн |
| TCR3DM12,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.45 грн |
| TCR3DM12,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 39902 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.31 грн |
| 18+ | 18.16 грн |
| 25+ | 16.39 грн |
| 100+ | 10.63 грн |
| 250+ | 8.95 грн |
| 500+ | 7.27 грн |
| 1000+ | 5.50 грн |
| 2500+ | 4.95 грн |
| 5000+ | 4.84 грн |
| TLP630(GB-FANUC,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| RN1415,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.88 грн |
| 6000+ | 4.23 грн |
| RN1415,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.50 грн |
| RN2408,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.50 грн |
| 6000+ | 3.91 грн |
| RN2408,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.05 грн |
| 24+ | 13.13 грн |
| 100+ | 8.19 грн |
| 500+ | 5.68 грн |
| 1000+ | 5.03 грн |
| TLP781F(YH,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP108(TPL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP781F(D4FUNBLL,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP2768(TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP2766(TP,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TCR3DF285,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA SMV
Description: IC REG LINEAR 2.85V 300MA SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.47 грн |
| TCR3DF285,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA SMV
Description: IC REG LINEAR 2.85V 300MA SMV
на замовлення 4675 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.56 грн |
| 12+ | 27.13 грн |
| 25+ | 23.75 грн |
| 100+ | 14.42 грн |
| 250+ | 11.94 грн |
| 500+ | 9.55 грн |
| 1000+ | 7.20 грн |
| TCR3DM13,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.3V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.63 грн |
| TCR3DM13,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.3V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 19615 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.70 грн |
| 33+ | 9.75 грн |
| 37+ | 8.62 грн |
| 100+ | 6.89 грн |
| 250+ | 6.33 грн |
| 500+ | 5.99 грн |
| 1000+ | 5.61 грн |
| 2500+ | 5.32 грн |
| 5000+ | 5.15 грн |
| TLP3083(F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
| 7UL1G07FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: USV
Part Status: Active
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: USV
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.04 грн |
| 7UL1G07FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: USV
Part Status: Active
Description: IC BUFFER NON-INVERTING 3.6V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: USV
Part Status: Active
на замовлення 4783 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.52 грн |
| 32+ | 10.14 грн |
| 35+ | 9.00 грн |
| 100+ | 7.22 грн |
| 250+ | 6.64 грн |
| 500+ | 6.28 грн |
| 1000+ | 5.89 грн |
| 1SS403E,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
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од. на суму грн.
| 1SS403E,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7796 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.70 грн |
| 33+ | 9.67 грн |
| 100+ | 5.35 грн |
| 500+ | 4.32 грн |
| 1000+ | 4.08 грн |
| 2000+ | 3.73 грн |
| TW048N65C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 48MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
Description: G3 650V SIC-MOSFET TO-247 48MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1378.41 грн |
| TW083N65C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 83MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5V @ 600µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
Description: G3 650V SIC-MOSFET TO-247 83MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5V @ 600µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 752.90 грн |
| 10+ | 524.50 грн |
| TW045N120C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 45MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 45MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1847.14 грн |
| 30+ | 1138.03 грн |
| TW060N120C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 60MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 60MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1787.53 грн |
| TW030N120C,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 30MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 30MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2734.78 грн |
| CUHZ16V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 17VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Description: TVS DIODE 16VWM 17VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.71 грн |
| CUHZ16V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 17VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Description: TVS DIODE 16VWM 17VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 42A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
на замовлення 3294 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.58 грн |
| 18+ | 17.93 грн |
| 100+ | 12.75 грн |
| 500+ | 8.95 грн |
| 1000+ | 7.98 грн |
| CUHZ30V,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 33.8VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 33.8V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Description: TVS DIODE 30VWM 33.8VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 33.8V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| CUHZ30V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 33.8VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 33.8V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Description: TVS DIODE 30VWM 33.8VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 26A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 33.8V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
на замовлення 1054 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.85 грн |
| 17+ | 19.34 грн |
| 100+ | 14.06 грн |
| 500+ | 9.90 грн |
| 1000+ | 8.71 грн |
| 2SA1943-O(S1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
Description: TRANS PNP 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 291.52 грн |
| TLP240J(F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 90 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
Description: SSR RELAY SPST-NO 90MA 0-600V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 90 mA
Approval Agency: CQC, cUL, UL, VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 60 Ohms
на замовлення 16 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.60 грн |
| 10+ | 97.74 грн |
| TLP240GA(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: CSA, CQC, cUL, UL
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: CSA, CQC, cUL, UL
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
товару немає в наявності
В кошику
од. на суму грн.
| TLP240GA(LF1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: CSA, CQC, cUL, UL
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: CSA, CQC, cUL, UL
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
на замовлення 120 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.70 грн |
| 10+ | 94.91 грн |
| 100+ | 68.27 грн |
| TLP240G(F |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 100MA 0-350V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 100 mA
Approval Agency: CQC, cUL, UL VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Description: SSR RELAY SPST-NO 100MA 0-350V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 100 mA
Approval Agency: CQC, cUL, UL VDE
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.70 грн |
| 10+ | 94.91 грн |
| 100+ | 68.27 грн |





















