| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SS33-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; 7 inch reel; 850pcs. Mounting: SMD Quantity in set/package: 850pcs. Load current: 3A Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMC Max. forward voltage: 0.5V Kind of package: 7 inch reel Max. off-state voltage: 30V Max. forward impulse current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS33-E3/9AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; 13 inch reel Mounting: SMD Quantity in set/package: 3500pcs. Load current: 3A Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMC Max. forward voltage: 0.5V Kind of package: 13 inch reel Max. off-state voltage: 30V Max. forward impulse current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SS32-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs. Mounting: SMD Kind of package: 7 inch reel Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 20V Max. forward impulse current: 100A Quantity in set/package: 850pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SS32-E3/9AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 13 inch reel Mounting: SMD Kind of package: 13 inch reel Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 20V Max. forward impulse current: 100A Quantity in set/package: 3500pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS32HE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs. Mounting: SMD Kind of package: 7 inch reel Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 20V Max. forward impulse current: 100A Quantity in set/package: 850pcs. Application: automotive industry Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SISS32ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 36nC On-state resistance: 8.7mΩ Power dissipation: 42W Drain current: 50.3A Gate-source voltage: ±20V Drain-source voltage: 80V Pulsed drain current: 120A Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® 1212-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SISS32DN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 42nC On-state resistance: 8.7mΩ Power dissipation: 42W Drain current: 50.3A Gate-source voltage: ±20V Drain-source voltage: 80V Pulsed drain current: 150A Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® 1212-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SISS32LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 57nC On-state resistance: 9.5mΩ Power dissipation: 42W Drain current: 50.3A Gate-source voltage: ±20V Drain-source voltage: 80V Pulsed drain current: 150A Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® 1212-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5KE20A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 20V; 54.2A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 17.1V Breakdown voltage: 20V Max. forward impulse current: 54.2A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1367 шт: термін постачання 21-30 дні (днів) |
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1.5KE24A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 45.2A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
на замовлення 890 шт: термін постачання 21-30 дні (днів) |
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SMCJ20A-E3/57T | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 46.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 848 шт: термін постачання 21-30 дні (днів) |
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| VDRH07K300TSE | VISHAY |
Category: THT varistorsDescription: Varistor: metal-oxide; THT; 300VAC; 385VDC; 470V; 1.75kA; Ø9mm Type of varistor: metal-oxide Mounting: THT Max. operating voltage: 300V AC; 385V DC Varistor voltage: 470V Varistor max current 8/20µs: 1.75kA Terminal pitch: 5mm Body dimensions: Ø9mm Diameter: 9mm Height: 9mm Operating temperature: -40...125°C Leads dimensions: Ø0.6x24mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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UG30DPT-E3/45 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 300A; TO247AD-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: tube Max. forward impulse current: 0.3kA Case: TO247AD-3 Max. forward voltage: 1.15V Reverse recovery time: 50ns |
на замовлення 743 шт: термін постачання 21-30 дні (днів) |
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VBT6045CBP-E3/4W | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.56V Max. load current: 60A Max. forward impulse current: 0.32kA Kind of package: tube Quantity in set/package: 50pcs. Application: photovoltaic solar cell protection |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| VBT6045C-E3/8W | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.47V Max. load current: 60A Max. forward impulse current: 0.32kA Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VBT6045C-E3/4W | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.47V Max. load current: 60A Max. forward impulse current: 0.32kA Kind of package: tube Quantity in set/package: 50pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VBT6045C-M3/8W | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.47V Max. load current: 60A Max. forward impulse current: 0.32kA Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VBT6045CBP-E3/8W | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.56V Max. load current: 60A Max. forward impulse current: 0.32kA Kind of package: 13 inch reel Quantity in set/package: 800pcs. Application: photovoltaic solar cell protection |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VBT6045C-M3/4W | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.47V Max. load current: 60A Max. forward impulse current: 0.32kA Kind of package: tube Quantity in set/package: 50pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VBT6045CBP-M3/4W | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.56V Max. load current: 60A Max. forward impulse current: 0.32kA Kind of package: tube Quantity in set/package: 50pcs. Application: photovoltaic solar cell protection |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VBT6045CBP-M3/8W | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.56V Max. load current: 60A Max. forward impulse current: 0.32kA Kind of package: 13 inch reel Quantity in set/package: 800pcs. Application: photovoltaic solar cell protection |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAV203-GS08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 1.5pF Kind of package: 7 inch reel Max. forward impulse current: 1A Case: QuadroMELF; SOD80 Max. forward voltage: 1V Max. load current: 0.625A Reverse recovery time: 50ns Quantity in set/package: 2500pcs. |
на замовлення 8884 шт: термін постачання 21-30 дні (днів) |
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BAV202-GS08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 1.5pF Kind of package: 7 inch reel Max. forward impulse current: 1A Case: QuadroMELF; SOD80 Max. forward voltage: 1V Max. load current: 0.625A Reverse recovery time: 50ns Quantity in set/package: 2500pcs. |
на замовлення 2165 шт: термін постачання 21-30 дні (днів) |
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BAV20-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: switching; THT; 200V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 1.5pF Kind of package: Ammo Pack Max. forward impulse current: 1A Case: DO35 Max. forward voltage: 1V Max. load current: 0.625A Reverse recovery time: 50ns |
на замовлення 8739 шт: термін постачання 21-30 дні (днів) |
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| BAV20W-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 150V; 0.25A; 50ns; Ufmax: 1.25V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 150V Load current: 0.25A Semiconductor structure: single diode Max. forward impulse current: 1A Max. forward voltage: 1.25V Reverse recovery time: 50ns Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BAV20W-E3-18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD Type of diode: switching Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAV20WS-HE3-18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 1.5pF Kind of package: 13 inch reel Max. forward impulse current: 1A Case: SOD323 Max. forward voltage: 1.25V Max. load current: 0.625A Reverse recovery time: 50ns Power dissipation: 0.2W Leakage current: 15µA Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VJ1206Y224KXAAT | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.22µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SML4742A-E3/61 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 12V; SMD; 7 inch reel; DO214AC,SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: DO214AC; SMA Semiconductor structure: single diode Quantity in set/package: 1800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRCW080522R0JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 22Ω; 0.125W; ±5%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 22Ω Power: 0.125W Tolerance: ±5% Operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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RCA080522R0JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0805; 22Ω; 125mW; ±5%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 22Ω Power: 0.125W Tolerance: ±5% Operating voltage: 150V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFP9140PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Kind of channel: enhancement Gate charge: 61nC Kind of package: tube |
на замовлення 223 шт: термін постачання 21-30 дні (днів) |
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IRF9510PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4A Pulsed drain current: -16A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 8.7nC Kind of package: tube Kind of channel: enhancement |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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IRF9510SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4A Pulsed drain current: -16A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: tube Kind of channel: enhancement |
на замовлення 498 шт: термін постачання 21-30 дні (днів) |
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| IRF9510STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4A Pulsed drain current: -16A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF9510STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4A Pulsed drain current: -16A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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534B1103JC | VISHAY |
Category: Wire multiturn potentiometersDescription: Potentiometer: shaft; multiturn; 10kΩ; 2W; ±5%; 6.35mm; Ø22.22x19mm Type of potentiometer: shaft Kind of potentiometer: multiturn Resistance: 10kΩ Power: 2W Tolerance: ±5% Temperature coefficient: 20ppm/°C Body dimensions: Ø22.22x19mm Track material: wirewound Operating temperature: -55...125°C Diameter: 22.22mm L shaft length: 20.7mm Linearity tolerance: ±0.25% Number of electrical turns: 10 Min. insulation resistance: 1GΩ Manufacturer series: 534 Shaft surface: smooth Potentiometer features: precise Height: 19mm Thread length: 8mm Shaft diameter: 6.35mm Shaft length: 12.7mm |
на замовлення 708 шт: термін постачання 21-30 дні (днів) |
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| MCT0603PD2002BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 20kΩ; 0.25W; ±0.1%; MCT0603; P; 75V Mounting: SMD Tolerance: ±0.1% Manufacturer series: MCT0603 Version: P Type of resistor: thin film Operating temperature: -55...175°C Resistance: 20kΩ Roll diameter max.: 180mm Power: 0.25W Temperature coefficient: 25ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Conform to the norm: AEC-Q200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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EGP20D-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; 13 inch reel; Ifsm: 75A; DO15; 50ns Case: DO15 Mounting: THT Kind of package: 13 inch reel Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Capacitance: 70pF Reverse recovery time: 50ns Leakage current: 0.1mA Max. forward voltage: 0.95V Load current: 2A Quantity in set/package: 4000pcs. Max. forward impulse current: 75A Max. off-state voltage: 200V |
на замовлення 647 шт: термін постачання 21-30 дні (днів) |
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EGP20D-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 75A; DO15; 50ns Case: DO15 Mounting: THT Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Capacitance: 70pF Reverse recovery time: 50ns Leakage current: 0.1mA Max. forward voltage: 0.95V Load current: 2A Max. forward impulse current: 75A Max. off-state voltage: 200V |
на замовлення 3477 шт: термін постачання 21-30 дні (днів) |
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| MCT0603PD1001BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.1%; MCT0603; P; 75V Version: P Power: 0.25W Mounting: SMD Manufacturer series: MCT0603 Type of resistor: thin film Operating temperature: -55...175°C Tolerance: ±0.1% Roll diameter max.: 180mm Resistance: 1kΩ Temperature coefficient: 25ppm/°C Case - inch: 0603 Operating voltage: 75V Case - mm: 1608 Conform to the norm: AEC-Q200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MCT0603PD1001DP500 | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.5%; MCT0603; P; 75V Version: P Power: 0.25W Mounting: SMD Manufacturer series: MCT0603 Type of resistor: thin film Operating temperature: -55...175°C Tolerance: ±0.5% Roll diameter max.: 180mm Resistance: 1kΩ Temperature coefficient: 25ppm/°C Case - inch: 0603 Operating voltage: 75V Case - mm: 1608 Conform to the norm: AEC-Q200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MCT0603PD1002BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.1%; MCT0603; P; 75V Version: P Power: 0.25W Mounting: SMD Manufacturer series: MCT0603 Type of resistor: thin film Operating temperature: -55...175°C Tolerance: ±0.1% Roll diameter max.: 180mm Resistance: 10kΩ Temperature coefficient: 25ppm/°C Case - inch: 0603 Operating voltage: 75V Case - mm: 1608 Conform to the norm: AEC-Q200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MCT0603PD1002DP500 | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.5%; MCT0603; P; 75V Version: P Power: 0.25W Mounting: SMD Manufacturer series: MCT0603 Type of resistor: thin film Operating temperature: -55...175°C Tolerance: ±0.5% Roll diameter max.: 180mm Resistance: 10kΩ Temperature coefficient: 25ppm/°C Case - inch: 0603 Operating voltage: 75V Case - mm: 1608 Conform to the norm: AEC-Q200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MCT0603PD1009DP500 | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; SMD; 0603; 10Ω; 0.25W; ±0.5%; MCT0603; P; 75V Version: P Power: 0.25W Mounting: SMD Manufacturer series: MCT0603 Type of resistor: thin film Operating temperature: -55...175°C Tolerance: ±0.5% Roll diameter max.: 180mm Resistance: 10Ω Temperature coefficient: 25ppm/°C Case - inch: 0603 Operating voltage: 75V Case - mm: 1608 Conform to the norm: AEC-Q200 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MCS0402PD1000DE500 | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; 0402; 100Ω; 200mW; ±0.5%; -55÷175°C; 25ppm/°C Power: 0.2W Type of resistor: thin film Operating temperature: -55...175°C Tolerance: ±0.5% Resistance: 100Ω Temperature coefficient: 25ppm/°C Case - inch: 0402 Case - mm: 1005 |
на замовлення 70000 шт: термін постачання 21-30 дні (днів) |
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| GSC00CX3302DARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 33uF; 200VDC; ±20%; -40÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 33µF Operating voltage: 200V DC Tolerance: ±20% Operating temperature: -40...105°C Manufacturer series: GSC Height: 16mm Nominal life: 2000h Dimensions: 12.5x16mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRFR9310TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2215 шт: термін постачання 21-30 дні (днів) |
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IRFRC20PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 8A |
на замовлення 2070 шт: термін постачання 21-30 дні (днів) |
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IRFR110PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: SMD Polarisation: unipolar Gate charge: 8.3nC On-state resistance: 0.54Ω Drain current: 2.7A Pulsed drain current: 17A Gate-source voltage: ±20V Power dissipation: 25W Drain-source voltage: 100V |
на замовлення 4842 шт: термін постачання 21-30 дні (днів) |
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IRFR9110PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2A Pulsed drain current: -12A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: tube Kind of channel: enhancement |
на замовлення 802 шт: термін постачання 21-30 дні (днів) |
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IRFR120PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Kind of package: tube Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 16nC On-state resistance: 0.27Ω Drain current: 4.9A Gate-source voltage: ±20V Pulsed drain current: 31A Power dissipation: 42W Drain-source voltage: 100V Polarisation: unipolar |
на замовлення 433 шт: термін постачання 21-30 дні (днів) |
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IRFR420PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
на замовлення 349 шт: термін постачання 21-30 дні (днів) |
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IRFR014PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
на замовлення 471 шт: термін постачання 21-30 дні (днів) |
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IRFR9220TRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1557 шт: термін постачання 21-30 дні (днів) |
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IRFR420APBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.1A Pulsed drain current: 10A Power dissipation: 83W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1026 шт: термін постачання 21-30 дні (днів) |
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IRFR210PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: tube Kind of channel: enhancement |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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IRFR9310PBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -1.1A Pulsed drain current: -7.2A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
на замовлення 685 шт: термін постачання 21-30 дні (днів) |
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IRFR220PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3A Pulsed drain current: 19A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhancement |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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IRFR420TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.5A Pulsed drain current: 8A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1855 шт: термін постачання 21-30 дні (днів) |
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| SS33-E3/57T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Quantity in set/package: 850pcs.
Load current: 3A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Kind of package: 7 inch reel
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Quantity in set/package: 850pcs.
Load current: 3A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Kind of package: 7 inch reel
Max. off-state voltage: 30V
Max. forward impulse current: 100A
товару немає в наявності
В кошику
од. на суму грн.
| SS33-E3/9AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; 13 inch reel
Mounting: SMD
Quantity in set/package: 3500pcs.
Load current: 3A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Kind of package: 13 inch reel
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; 13 inch reel
Mounting: SMD
Quantity in set/package: 3500pcs.
Load current: 3A
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Kind of package: 13 inch reel
Max. off-state voltage: 30V
Max. forward impulse current: 100A
товару немає в наявності
В кошику
од. на суму грн.
| SS32-E3/57T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| SS32-E3/9AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 13 inch reel
Mounting: SMD
Kind of package: 13 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 13 inch reel
Mounting: SMD
Kind of package: 13 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| SS32HE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Application: automotive industry
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Kind of package: 7 inch reel
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Application: automotive industry
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| SISS32ADN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 8.7mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 120A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 120A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 8.7mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 120A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
товару немає в наявності
В кошику
од. на суму грн.
| SISS32DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 8.7mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 42nC
On-state resistance: 8.7mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
товару немає в наявності
В кошику
од. на суму грн.
| SISS32LDN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 9.5mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 50.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 9.5mΩ
Power dissipation: 42W
Drain current: 50.3A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 150A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE20A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20V; 54.2A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17.1V
Breakdown voltage: 20V
Max. forward impulse current: 54.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 20V; 54.2A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17.1V
Breakdown voltage: 20V
Max. forward impulse current: 54.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1367 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.26 грн |
| 13+ | 33.87 грн |
| 100+ | 23.98 грн |
| 500+ | 18.62 грн |
| 1000+ | 16.81 грн |
| 1.5KE24A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 24V; 45.2A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45.2A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
на замовлення 890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.69 грн |
| 15+ | 29.17 грн |
| 100+ | 21.92 грн |
| 250+ | 19.78 грн |
| 500+ | 18.37 грн |
| SMCJ20A-E3/57T |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 848 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.49 грн |
| 18+ | 23.65 грн |
| 100+ | 16.73 грн |
| 250+ | 14.01 грн |
| 500+ | 11.95 грн |
| VDRH07K300TSE |
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Виробник: VISHAY
Category: THT varistors
Description: Varistor: metal-oxide; THT; 300VAC; 385VDC; 470V; 1.75kA; Ø9mm
Type of varistor: metal-oxide
Mounting: THT
Max. operating voltage: 300V AC; 385V DC
Varistor voltage: 470V
Varistor max current 8/20µs: 1.75kA
Terminal pitch: 5mm
Body dimensions: Ø9mm
Diameter: 9mm
Height: 9mm
Operating temperature: -40...125°C
Leads dimensions: Ø0.6x24mm
Category: THT varistors
Description: Varistor: metal-oxide; THT; 300VAC; 385VDC; 470V; 1.75kA; Ø9mm
Type of varistor: metal-oxide
Mounting: THT
Max. operating voltage: 300V AC; 385V DC
Varistor voltage: 470V
Varistor max current 8/20µs: 1.75kA
Terminal pitch: 5mm
Body dimensions: Ø9mm
Diameter: 9mm
Height: 9mm
Operating temperature: -40...125°C
Leads dimensions: Ø0.6x24mm
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| UG30DPT-E3/45 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AD-3
Max. forward voltage: 1.15V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 300A; TO247AD-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AD-3
Max. forward voltage: 1.15V
Reverse recovery time: 50ns
на замовлення 743 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.37 грн |
| 10+ | 126.07 грн |
| 30+ | 113.71 грн |
| 120+ | 107.12 грн |
| VBT6045CBP-E3/4W |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Application: photovoltaic solar cell protection
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Application: photovoltaic solar cell protection
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| VBT6045C-E3/8W |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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| VBT6045C-E3/4W |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
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| VBT6045C-M3/8W |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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| VBT6045CBP-E3/8W |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: photovoltaic solar cell protection
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: photovoltaic solar cell protection
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| VBT6045C-M3/4W |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.47V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
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| VBT6045CBP-M3/4W |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Application: photovoltaic solar cell protection
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: tube
Quantity in set/package: 50pcs.
Application: photovoltaic solar cell protection
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| VBT6045CBP-M3/8W |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: photovoltaic solar cell protection
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 30Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Max. load current: 60A
Max. forward impulse current: 0.32kA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: photovoltaic solar cell protection
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| BAV203-GS08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 7 inch reel
Max. forward impulse current: 1A
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Quantity in set/package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 7 inch reel
Max. forward impulse current: 1A
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Quantity in set/package: 2500pcs.
на замовлення 8884 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 66+ | 6.26 грн |
| 72+ | 5.77 грн |
| 95+ | 4.35 грн |
| 108+ | 3.85 грн |
| 500+ | 2.91 грн |
| 1000+ | 2.59 грн |
| 1300+ | 2.48 грн |
| 2500+ | 2.23 грн |
| BAV202-GS08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 7 inch reel
Max. forward impulse current: 1A
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Quantity in set/package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 7 inch reel
Max. forward impulse current: 1A
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Quantity in set/package: 2500pcs.
на замовлення 2165 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 105+ | 3.96 грн |
| 115+ | 3.59 грн |
| 135+ | 3.07 грн |
| 500+ | 2.55 грн |
| 1000+ | 2.36 грн |
| BAV20-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: Ammo Pack
Max. forward impulse current: 1A
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: Ammo Pack
Max. forward impulse current: 1A
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.625A
Reverse recovery time: 50ns
на замовлення 8739 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.20 грн |
| 41+ | 10.16 грн |
| 46+ | 9.06 грн |
| 80+ | 5.17 грн |
| 118+ | 3.50 грн |
| 250+ | 3.27 грн |
| 500+ | 2.76 грн |
| 1000+ | 2.24 грн |
| 2500+ | 2.10 грн |
| BAV20W-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.25A; 50ns; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.25A; 50ns; Ufmax: 1.25V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Leakage current: 0.1µA
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| BAV20W-E3-18 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD
Type of diode: switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: switching; SMD
Type of diode: switching
Mounting: SMD
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| BAV20WS-HE3-18 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 13 inch reel
Max. forward impulse current: 1A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
Power dissipation: 0.2W
Leakage current: 15µA
Quantity in set/package: 10000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Kind of package: 13 inch reel
Max. forward impulse current: 1A
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
Power dissipation: 0.2W
Leakage current: 15µA
Quantity in set/package: 10000pcs.
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| VJ1206Y224KXAAT |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.22µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.22µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
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| SML4742A-E3/61 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; 7 inch reel; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: DO214AC; SMA
Semiconductor structure: single diode
Quantity in set/package: 1800pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; 7 inch reel; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: DO214AC; SMA
Semiconductor structure: single diode
Quantity in set/package: 1800pcs.
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| CRCW080522R0JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22Ω; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22Ω; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 66+ | 6.74 грн |
| 266+ | 1.55 грн |
| 356+ | 1.16 грн |
| 402+ | 1.03 грн |
| 543+ | 0.76 грн |
| 1000+ | 0.66 грн |
| 2500+ | 0.55 грн |
| 5000+ | 0.48 грн |
| RCA080522R0JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 22Ω; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0805; 22Ω; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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| IRFP9140PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: tube
на замовлення 223 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.73 грн |
| 10+ | 170.56 грн |
| 25+ | 153.26 грн |
| 50+ | 140.08 грн |
| 100+ | 126.07 грн |
| IRF9510PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.37 грн |
| 12+ | 34.44 грн |
| 50+ | 30.57 грн |
| 100+ | 29.00 грн |
| 250+ | 27.03 грн |
| 500+ | 25.63 грн |
| IRF9510SPBF | ![]() |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 498 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 113.58 грн |
| 10+ | 70.86 грн |
| 50+ | 61.06 грн |
| 100+ | 56.94 грн |
| 250+ | 51.66 грн |
| IRF9510STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF9510STRRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; Idm: -16A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 534B1103JC |
![]() |
Виробник: VISHAY
Category: Wire multiturn potentiometers
Description: Potentiometer: shaft; multiturn; 10kΩ; 2W; ±5%; 6.35mm; Ø22.22x19mm
Type of potentiometer: shaft
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 2W
Tolerance: ±5%
Temperature coefficient: 20ppm/°C
Body dimensions: Ø22.22x19mm
Track material: wirewound
Operating temperature: -55...125°C
Diameter: 22.22mm
L shaft length: 20.7mm
Linearity tolerance: ±0.25%
Number of electrical turns: 10
Min. insulation resistance: 1GΩ
Manufacturer series: 534
Shaft surface: smooth
Potentiometer features: precise
Height: 19mm
Thread length: 8mm
Shaft diameter: 6.35mm
Shaft length: 12.7mm
Category: Wire multiturn potentiometers
Description: Potentiometer: shaft; multiturn; 10kΩ; 2W; ±5%; 6.35mm; Ø22.22x19mm
Type of potentiometer: shaft
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 2W
Tolerance: ±5%
Temperature coefficient: 20ppm/°C
Body dimensions: Ø22.22x19mm
Track material: wirewound
Operating temperature: -55...125°C
Diameter: 22.22mm
L shaft length: 20.7mm
Linearity tolerance: ±0.25%
Number of electrical turns: 10
Min. insulation resistance: 1GΩ
Manufacturer series: 534
Shaft surface: smooth
Potentiometer features: precise
Height: 19mm
Thread length: 8mm
Shaft diameter: 6.35mm
Shaft length: 12.7mm
на замовлення 708 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 950.36 грн |
| 5+ | 808.32 грн |
| 10+ | 778.65 грн |
| 20+ | 763.82 грн |
| 50+ | 741.57 грн |
| 100+ | 726.74 грн |
| 200+ | 711.91 грн |
| 400+ | 704.49 грн |
| MCT0603PD2002BP100 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 20kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Mounting: SMD
Tolerance: ±0.1%
Manufacturer series: MCT0603
Version: P
Type of resistor: thin film
Operating temperature: -55...175°C
Resistance: 20kΩ
Roll diameter max.: 180mm
Power: 0.25W
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 20kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Mounting: SMD
Tolerance: ±0.1%
Manufacturer series: MCT0603
Version: P
Type of resistor: thin film
Operating temperature: -55...175°C
Resistance: 20kΩ
Roll diameter max.: 180mm
Power: 0.25W
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Conform to the norm: AEC-Q200
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| EGP20D-E3/54 |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; 13 inch reel; Ifsm: 75A; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 70pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Load current: 2A
Quantity in set/package: 4000pcs.
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; 13 inch reel; Ifsm: 75A; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 70pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Load current: 2A
Quantity in set/package: 4000pcs.
Max. forward impulse current: 75A
Max. off-state voltage: 200V
на замовлення 647 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.06 грн |
| 17+ | 24.88 грн |
| 100+ | 22.49 грн |
| 500+ | 19.28 грн |
| EGP20D-E3/73 |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 75A; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 70pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 75A; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 70pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 200V
на замовлення 3477 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.57 грн |
| 12+ | 37.16 грн |
| 100+ | 29.66 грн |
| 500+ | 24.55 грн |
| 1000+ | 22.25 грн |
| 2000+ | 22.16 грн |
| MCT0603PD1001BP100 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.1%
Roll diameter max.: 180mm
Resistance: 1kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.1%
Roll diameter max.: 180mm
Resistance: 1kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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| MCT0603PD1001DP500 |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 1kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1kΩ; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 1kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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| MCT0603PD1002BP100 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.1%
Roll diameter max.: 180mm
Resistance: 10kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.1%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.1%
Roll diameter max.: 180mm
Resistance: 10kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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| MCT0603PD1002DP500 |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 10kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 10kΩ
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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| MCT0603PD1009DP500 |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10Ω; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 10Ω
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10Ω; 0.25W; ±0.5%; MCT0603; P; 75V
Version: P
Power: 0.25W
Mounting: SMD
Manufacturer series: MCT0603
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Roll diameter max.: 180mm
Resistance: 10Ω
Temperature coefficient: 25ppm/°C
Case - inch: 0603
Operating voltage: 75V
Case - mm: 1608
Conform to the norm: AEC-Q200
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| MCS0402PD1000DE500 |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 0402; 100Ω; 200mW; ±0.5%; -55÷175°C; 25ppm/°C
Power: 0.2W
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Resistance: 100Ω
Temperature coefficient: 25ppm/°C
Case - inch: 0402
Case - mm: 1005
Category: SMD resistors
Description: Resistor: thin film; 0402; 100Ω; 200mW; ±0.5%; -55÷175°C; 25ppm/°C
Power: 0.2W
Type of resistor: thin film
Operating temperature: -55...175°C
Tolerance: ±0.5%
Resistance: 100Ω
Temperature coefficient: 25ppm/°C
Case - inch: 0402
Case - mm: 1005
на замовлення 70000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 3.92 грн |
| GSC00CX3302DARL |
![]() |
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 200VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 200V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 16mm
Nominal life: 2000h
Dimensions: 12.5x16mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 200VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 200V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 16mm
Nominal life: 2000h
Dimensions: 12.5x16mm
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| IRFR9310TRPBF |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.13 грн |
| 5+ | 83.72 грн |
| 10+ | 73.75 грн |
| 100+ | 49.44 грн |
| 500+ | 39.55 грн |
| 1000+ | 35.84 грн |
| 2000+ | 31.97 грн |
| IRFRC20PBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
на замовлення 2070 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.48 грн |
| 11+ | 41.03 грн |
| 75+ | 29.09 грн |
| IRFR110PBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.54Ω
Drain current: 2.7A
Pulsed drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.54Ω
Drain current: 2.7A
Pulsed drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 100V
на замовлення 4842 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.80 грн |
| 525+ | 23.24 грн |
| 1050+ | 22.08 грн |
| 1500+ | 21.34 грн |
| 2025+ | 20.60 грн |
| 3000+ | 20.43 грн |
| IRFR9110PBF |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -12A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 8.7nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 802 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.54 грн |
| 75+ | 33.87 грн |
| IRFR120PBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Kind of package: tube
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 16nC
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate-source voltage: ±20V
Pulsed drain current: 31A
Power dissipation: 42W
Drain-source voltage: 100V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Kind of package: tube
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 16nC
On-state resistance: 0.27Ω
Drain current: 4.9A
Gate-source voltage: ±20V
Pulsed drain current: 31A
Power dissipation: 42W
Drain-source voltage: 100V
Polarisation: unipolar
на замовлення 433 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.27 грн |
| 20+ | 32.22 грн |
| 75+ | 30.57 грн |
| IRFR420PBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 349 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 62.11 грн |
| 11+ | 37.82 грн |
| 75+ | 32.63 грн |
| 150+ | 31.31 грн |
| IRFR014PBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 471 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 86.96 грн |
| 10+ | 69.71 грн |
| 25+ | 56.52 грн |
| 50+ | 43.59 грн |
| 75+ | 36.83 грн |
| 150+ | 30.16 грн |
| 225+ | 29.00 грн |
| IRFR9220TRPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1557 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.21 грн |
| 250+ | 55.87 грн |
| 500+ | 51.17 грн |
| 1000+ | 45.40 грн |
| IRFR420APBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 10A
Power dissipation: 83W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 10A
Power dissipation: 83W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1026 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.68 грн |
| 5+ | 83.55 грн |
| 10+ | 70.20 грн |
| 25+ | 56.52 грн |
| 50+ | 49.77 грн |
| 75+ | 46.88 грн |
| 150+ | 43.42 грн |
| IRFR210PBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 10A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 10A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 238 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.27 грн |
| 13+ | 32.38 грн |
| 75+ | 29.91 грн |
| IRFR9310PBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -1.1A
Pulsed drain current: -7.2A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 685 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.72 грн |
| 10+ | 45.90 грн |
| 75+ | 31.64 грн |
| IRFR220PBF | ![]() |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.80 грн |
| 11+ | 40.37 грн |
| 75+ | 29.75 грн |
| 150+ | 26.70 грн |
| IRFR420TRPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Pulsed drain current: 8A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1855 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.79 грн |
| 10+ | 48.53 грн |
| 100+ | 39.63 грн |
| 500+ | 32.71 грн |
| 1000+ | 29.66 грн |



















