Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5687) > Сторінка 17 з 95

Обрати Сторінку:   [  << Попередня Сторінка ]  1 9 12 13 14 15 16 17 18 19 20 21 22 27 36 45 54 63 72 81 90 95  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
MURT10060 MURT10060 GeneSiC Semiconductor murt10040.pdf Description: DIODE ARRAY GP 600V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT10060R MURT10060R GeneSiC Semiconductor murt10040.pdf Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20005 MURT20005 GeneSiC Semiconductor murt20005_thru_murt20020r.pdf Description: DIODE MODULE 50V 200A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT20005R MURT20005R GeneSiC Semiconductor murt20005_thru_murt20020r.pdf Description: DIODE MODULE 50V 200A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT20010 MURT20010 GeneSiC Semiconductor murt20005.pdf Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20010R MURT20010R GeneSiC Semiconductor murt20005.pdf Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20020 MURT20020 GeneSiC Semiconductor murt20005.pdf Description: DIODE MODULE GP 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20020R MURT20020R GeneSiC Semiconductor murt20005.pdf Description: DIODE MODULE GP 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20040 MURT20040 GeneSiC Semiconductor murt20040.pdf Description: DIODE MODULE GP 400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20040R MURT20040R GeneSiC Semiconductor murt20040.pdf Description: DIODE MODULE GP 400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20060 MURT20060 GeneSiC Semiconductor murt20040.pdf Description: DIODE MODULE 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20060R MURT20060R GeneSiC Semiconductor murt20040.pdf Description: DIODE MODULE 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT30005 MURT30005 GeneSiC Semiconductor murt30005_thru_murt30020r.pdf Description: DIODE MODULE 50V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30005R MURT30005R GeneSiC Semiconductor murt30005_thru_murt30020r.pdf Description: DIODE MODULE 50V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30010 MURT30010 GeneSiC Semiconductor murt30005.pdf Description: DIODE MODULE 100V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30010R MURT30010R GeneSiC Semiconductor murt30005_thru_murt30020r.pdf Description: DIODE MODULE 100V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30020 MURT30020 GeneSiC Semiconductor murt30005_thru_murt30020r.pdf Description: DIODE MODULE 200V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30020R MURT30020R GeneSiC Semiconductor murt30005_thru_murt30020r.pdf Description: DIODE MODULE 200V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30040 MURT30040 GeneSiC Semiconductor murt30040.pdf Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT30040R MURT30040R GeneSiC Semiconductor murt30040.pdf Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT30060 MURT30060 GeneSiC Semiconductor murt30040_thru_murt30060r.pdf Description: DIODE MODULE 600V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30060R MURT30060R GeneSiC Semiconductor murt30040_thru_murt30060r.pdf Description: DIODE MODULE 600V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40005 MURT40005 GeneSiC Semiconductor murt40005_thru_murt40020r.pdf Description: DIODE MODULE 50V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40005R MURT40005R GeneSiC Semiconductor murt40005_thru_murt40020r.pdf Description: DIODE MODULE 50V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40010 MURT40010 GeneSiC Semiconductor murt40005_thru_murt40020r.pdf Description: DIODE MODULE 100V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40010R MURT40010R GeneSiC Semiconductor murt40005_thru_murt40020r.pdf Description: DIODE MODULE 100V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40020 MURT40020 GeneSiC Semiconductor murt40005_thru_murt40020r.pdf Description: DIODE MODULE 200V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40020R MURT40020R GeneSiC Semiconductor murt40005_thru_murt40020r.pdf Description: DIODE MODULE 200V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40060 MURT40060 GeneSiC Semiconductor murt40040.pdf Description: DIODE MODULE 600V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40060R MURT40060R GeneSiC Semiconductor murt40040.pdf Description: DIODE MODULE 600V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50020 MURTA50020 GeneSiC Semiconductor murta50020.pdf Description: DIODE MODULE GP 200V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50020R MURTA50020R GeneSiC Semiconductor murta50020.pdf Description: DIODE MODULE GP 200V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50040 MURTA50040 GeneSiC Semiconductor murta50020.pdf Description: DIODE MODULE GP 400V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50040R MURTA50040R GeneSiC Semiconductor murta50020.pdf Description: DIODE MODULE GP 400V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50060 MURTA50060 GeneSiC Semiconductor murta500120.pdf Description: DIODE MODULE GP 600V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50060R MURTA50060R GeneSiC Semiconductor murta500120.pdf Description: DIODE MODULE GP 600V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60020 MURTA60020 GeneSiC Semiconductor murta60020.pdf Description: DIODE MODULE GP 200V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60020R MURTA60020R GeneSiC Semiconductor murta60020.pdf Description: DIODE MODULE GP 200V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60040 MURTA60040 GeneSiC Semiconductor murta60020.pdf Description: DIODE MODULE GP 400V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60040R MURTA60040R GeneSiC Semiconductor murta60020.pdf Description: DIODE MODULE GP 400V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60060 MURTA60060 GeneSiC Semiconductor murta60060.pdf Description: DIODE MODULE GP 600V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60060R MURTA60060R GeneSiC Semiconductor murta60060.pdf Description: DIODE MODULE GP 600V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
S12BR GeneSiC Semiconductor s12b_thru_s12jr.pdf Description: DIODE GEN PURP REV 100V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12D S12D GeneSiC Semiconductor s12b_thru_s12jr.pdf Description: DIODE GEN PURP 200V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12DR GeneSiC Semiconductor s12b_thru_s12jr.pdf Description: DIODE GEN PURP REV 200V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12G GeneSiC Semiconductor s12b_thru_s12jr.pdf Description: DIODE GEN PURP 400V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12GR GeneSiC Semiconductor s12b_thru_s12jr.pdf Description: DIODE GEN PURP REV 400V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12J GeneSiC Semiconductor s12b_thru_s12jr.pdf Description: DIODE GEN PURP 600V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12JR GeneSiC Semiconductor s12b_thru_s12jr.pdf Description: DIODE GEN PURP REV 600V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12K GeneSiC Semiconductor s12k_thru_s12qr.pdf Description: DIODE GEN PURP 800V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12KR GeneSiC Semiconductor s12m.pdf Description: DIODE GEN PURP REV 800V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12M GeneSiC Semiconductor s12m.pdf Description: DIODE GEN PURP 1000V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12MR GeneSiC Semiconductor s12k_thru_s12qr.pdf Description: DIODE GEN PURP REV 1KV 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12Q S12Q GeneSiC Semiconductor s12m.pdf Description: DIODE GEN PURP 1.2KV 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
S12QR GeneSiC Semiconductor s12k_thru_s12qr.pdf Description: DIODE GEN PURP REV 1.2KV 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S150J GeneSiC Semiconductor s150j.pdf Description: DIODE GEN PURP 600V 150A DO205AA
товару немає в наявності
В кошику  од. на суму  грн.
S150JR GeneSiC Semiconductor s150j.pdf Description: DIODE GEN PURP 600V 150A DO205AA
товару немає в наявності
В кошику  од. на суму  грн.
S150K GeneSiC Semiconductor s150j.pdf Description: DIODE GEN PURP 800V 150A DO205AA
товару немає в наявності
В кошику  од. на суму  грн.
S150KR GeneSiC Semiconductor s150j.pdf Description: DIODE GEN PURP 800V 150A DO205AA
товару немає в наявності
В кошику  од. на суму  грн.
S150M GeneSiC Semiconductor s150j.pdf Description: DIODE GEN PURP 1KV 150A DO205
товару немає в наявності
В кошику  од. на суму  грн.
MURT10060 murt10040.pdf
MURT10060
Виробник: GeneSiC Semiconductor
Description: DIODE ARRAY GP 600V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT10060R murt10040.pdf
MURT10060R
Виробник: GeneSiC Semiconductor
Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20005 murt20005_thru_murt20020r.pdf
MURT20005
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT20005R murt20005_thru_murt20020r.pdf
MURT20005R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT20010 murt20005.pdf
MURT20010
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20010R murt20005.pdf
MURT20010R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20020 murt20005.pdf
MURT20020
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20020R murt20005.pdf
MURT20020R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20040 murt20040.pdf
MURT20040
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20040R murt20040.pdf
MURT20040R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20060 murt20040.pdf
MURT20060
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT20060R murt20040.pdf
MURT20060R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT30005 murt30005_thru_murt30020r.pdf
MURT30005
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30005R murt30005_thru_murt30020r.pdf
MURT30005R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30010 murt30005.pdf
MURT30010
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30010R murt30005_thru_murt30020r.pdf
MURT30010R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30020 murt30005_thru_murt30020r.pdf
MURT30020
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30020R murt30005_thru_murt30020r.pdf
MURT30020R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30040 murt30040.pdf
MURT30040
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT30040R murt30040.pdf
MURT30040R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURT30060 murt30040_thru_murt30060r.pdf
MURT30060
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT30060R murt30040_thru_murt30060r.pdf
MURT30060R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40005 murt40005_thru_murt40020r.pdf
MURT40005
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40005R murt40005_thru_murt40020r.pdf
MURT40005R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40010 murt40005_thru_murt40020r.pdf
MURT40010
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40010R murt40005_thru_murt40020r.pdf
MURT40010R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40020 murt40005_thru_murt40020r.pdf
MURT40020
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40020R murt40005_thru_murt40020r.pdf
MURT40020R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40060 murt40040.pdf
MURT40060
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURT40060R murt40040.pdf
MURT40060R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50020 murta50020.pdf
MURTA50020
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50020R murta50020.pdf
MURTA50020R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50040 murta50020.pdf
MURTA50040
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50040R murta50020.pdf
MURTA50040R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50060 murta500120.pdf
MURTA50060
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA50060R murta500120.pdf
MURTA50060R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60020 murta60020.pdf
MURTA60020
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60020R murta60020.pdf
MURTA60020R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60040 murta60020.pdf
MURTA60040
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60040R murta60020.pdf
MURTA60040R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60060 murta60060.pdf
MURTA60060
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MURTA60060R murta60060.pdf
MURTA60060R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
S12BR s12b_thru_s12jr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12D s12b_thru_s12jr.pdf
S12D
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12DR s12b_thru_s12jr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12G s12b_thru_s12jr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12GR s12b_thru_s12jr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12J s12b_thru_s12jr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12JR s12b_thru_s12jr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12K s12k_thru_s12qr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12KR s12m.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12M s12m.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1000V 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12MR s12k_thru_s12qr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S12Q s12m.pdf
S12Q
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
S12QR s12k_thru_s12qr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.2KV 12A DO4
товару немає в наявності
В кошику  од. на суму  грн.
S150J s150j.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A DO205AA
товару немає в наявності
В кошику  од. на суму  грн.
S150JR s150j.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A DO205AA
товару немає в наявності
В кошику  од. на суму  грн.
S150K s150j.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 150A DO205AA
товару немає в наявності
В кошику  од. на суму  грн.
S150KR s150j.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 150A DO205AA
товару немає в наявності
В кошику  од. на суму  грн.
S150M s150j.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 150A DO205
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 9 12 13 14 15 16 17 18 19 20 21 22 27 36 45 54 63 72 81 90 95  [ Наступна Сторінка >> ]