Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5819) > Сторінка 23 з 97
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MBR2X120A100 | GeneSiC Semiconductor |
 Description: DIODE MOD SCHOT 100V 120A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MBR2X120A120 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 120V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 120 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR2X120A150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 120A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR2X120A180 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 180V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 180 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR2X120A200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR2X160A080 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR2X160A100 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR2X160A120 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 120V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR2X160A150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR2X160A180 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 180V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR2X160A200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR300150CT | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
| MBR300150CTR | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
| MBR300200CT | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
| MBR300200CTR | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
MBR30020CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR30020CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR30030CTL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR30030CTRL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR30035CTL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR30035CTRL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR30040CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
| MBR30040CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
|
|
MBR30045CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 150A 2 TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR30045CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 150A 2 TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | |
|
|
MBR400150CT | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR400150CTR | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR400200CT | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR400200CTR | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40020CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40020CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40030CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40030CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40035CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40035CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40040CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40040CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40045CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40045CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MBR500150CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 250A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR500150CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 250A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR500200CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 250A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR500200CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 250A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR600150CT | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR600150CTR | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR600200CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 300A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR600200CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 300A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60020CTL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60020CTRL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60030CTL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60030CTRL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60035CTL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60035CTRL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60040CTL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 40V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60040CTRL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 40V 300A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60045CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 300A 2 TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR60045CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 300A 2 TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MBRH120150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH120150R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH120200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 120A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR2X120A100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE MOD SCHOT 100V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
Description: DIODE SCHOTTKY 120V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 120A SOT227
Description: DIODE SCHOTTKY 150V 120A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A180 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Description: DIODE SCHOTTKY 180V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE SCHOTTKY 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A080 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 160A SOT227
Description: DIODE SCHOTTKY 80V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 160A SOT227
Description: DIODE SCHOTTKY 100V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 160A SOT227
Description: DIODE SCHOTTKY 120V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 160A SOT227
Description: DIODE SCHOTTKY 150V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A180 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 160A SOT227
Description: DIODE SCHOTTKY 180V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 160A SOT227
Description: DIODE SCHOTTKY 200V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR300150CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR300150CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR300200CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR300200CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30020CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30020CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30030CTL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30030CTRL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30035CTL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30035CTRL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30040CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30040CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30045CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR30045CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR400150CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 200A 2 TOWER
Description: DIODE SCHOTTKY 150V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR400150CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 200A 2 TOWER
Description: DIODE SCHOTTKY 150V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR400200CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A 2 TOWER
Description: DIODE SCHOTTKY 200V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR400200CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A 2 TOWER
Description: DIODE SCHOTTKY 200V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40020CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A 2 TOWER
Description: DIODE SCHOTTKY 20V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40020CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A 2 TOWER
Description: DIODE SCHOTTKY 20V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40030CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A 2 TOWER
Description: DIODE SCHOTTKY 30V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40030CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A 2 TOWER
Description: DIODE SCHOTTKY 30V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40035CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A 2 TOWER
Description: DIODE SCHOTTKY 35V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40035CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A 2 TOWER
Description: DIODE SCHOTTKY 35V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40040CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A 2 TOWER
Description: DIODE SCHOTTKY 40V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40040CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A 2 TOWER
Description: DIODE SCHOTTKY 40V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40045CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A 2 TOWER
Description: DIODE SCHOTTKY 45V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40045CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A 2 TOWER
Description: DIODE SCHOTTKY 45V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR500150CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR500150CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR500200CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR500200CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR600150CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 300A 2 TOWER
Description: DIODE SCHOTTKY 150V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR600150CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 300A 2 TOWER
Description: DIODE SCHOTTKY 150V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR600200CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR600200CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR60020CTL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 300A 2 TOWER
Description: DIODE SCHOTTKY 20V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR60020CTRL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 300A 2 TOWER
Description: DIODE SCHOTTKY 20V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR60030CTL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A 2 TOWER
Description: DIODE SCHOTTKY 30V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR60030CTRL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 300A 2 TOWER
Description: DIODE SCHOTTKY 30V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR60035CTL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A 2 TOWER
Description: DIODE SCHOTTKY 35V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR60035CTRL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 300A 2 TOWER
Description: DIODE SCHOTTKY 35V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR60040CTL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A 2 TOWER
Description: DIODE SCHOTTKY 40V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR60040CTRL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 300A 2 TOWER
Description: DIODE SCHOTTKY 40V 300A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR60045CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 300A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR60045CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 300A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH120150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE SCHOTTKY 150V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH120150R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE SCHOTTKY 150V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH120200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE SCHOTTKY 200V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.