Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5688) > Сторінка 22 з 95
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MBR2X120A060 | GeneSiC Semiconductor |
 Description: DIODE MOD SCHOTT 60V 120A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MBR2X120A080 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR2X120A100 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR2X120A120 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 120V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 120 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR2X120A150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 120A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR2X120A180 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 180V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 180 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR2X120A200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR2X160A080 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
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MBR2X160A100 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR2X160A120 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 120V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
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MBR2X160A150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR2X160A180 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 180V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR2X160A200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 160A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR300150CT | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
| MBR300150CTR | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
| MBR300200CT | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
| MBR300200CTR | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
MBR30020CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR30020CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
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MBR30030CTL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
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MBR30030CTRL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBR30035CTL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR30035CTRL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR30040CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
| MBR30040CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 150A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |
|
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MBR30045CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 150A 2 TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR30045CTRL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 150A 2 TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | |
|
|
MBR40020CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40035CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR40045CTL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 200A 2 TOWER |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MBR500150CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 250A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR500150CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 250A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR500200CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 250A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR500200CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 250A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBR600200CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 300A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MBRH15020L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH15020RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH15030L | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH15030RL | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH15035L | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH15035RL | GeneSiC Semiconductor |
Description: DIODE MODULE 35V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH15040L | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH15040RL | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH15045L | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH15045RL | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 150A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MBRH200150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 200A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 200A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH200150R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH200200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
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MBRH200200R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20020L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20020RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20030L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20030RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 30V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20035L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20035RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 35V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20040L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 200A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 200A Supplier Device Package: D-67 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20040RL | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 40V 200A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 200A Supplier Device Package: D-67 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20045L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 45V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
MBRH20045RL | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 45V 200A D-67 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MBRT120150 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 150V 60A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MBR2X120A060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE MOD SCHOTT 60V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A080 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Description: DIODE SCHOTTKY 80V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE MOD SCHOT 100V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
Description: DIODE SCHOTTKY 120V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 120A SOT227
Description: DIODE SCHOTTKY 150V 120A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A180 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Description: DIODE SCHOTTKY 180V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X120A200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE SCHOTTKY 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A080 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 160A SOT227
Description: DIODE SCHOTTKY 80V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 160A SOT227
Description: DIODE SCHOTTKY 100V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 160A SOT227
Description: DIODE SCHOTTKY 120V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 160A SOT227
Description: DIODE SCHOTTKY 150V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A180 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 160A SOT227
Description: DIODE SCHOTTKY 180V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR2X160A200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 160A SOT227
Description: DIODE SCHOTTKY 200V 160A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MBR300150CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR300150CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR300200CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR300200CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30020CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30020CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30030CTL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30030CTRL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30035CTL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30035CTRL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30040CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30040CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30045CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR30045CTRL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR40020CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A 2 TOWER
Description: DIODE SCHOTTKY 20V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40035CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A 2 TOWER
Description: DIODE SCHOTTKY 35V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR40045CTL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A 2 TOWER
Description: DIODE SCHOTTKY 45V 200A 2 TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR500150CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR500150CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOT 150V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR500200CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR500200CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR600200CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15020L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A D-67
Description: DIODE SCHOTTKY 20V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15020RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A D-67
Description: DIODE SCHOTTKY 20V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15030L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 150A D-67
Description: DIODE MODULE 30V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15030RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 150A D-67
Description: DIODE MODULE 30V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15035L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 150A D-67
Description: DIODE MODULE 35V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15035RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 150A D-67
Description: DIODE MODULE 35V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15040L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 150A D-67
Description: DIODE MODULE 40V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15040RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 150A D-67
Description: DIODE MODULE 40V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15045L |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 150A D-67
Description: DIODE MODULE 45V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH15045RL |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 150A D-67
Description: DIODE MODULE 45V 150A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH200150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE SCHOTTKY 150V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH200150R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A D-67
Description: DIODE SCHOTTKY 200V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH200200 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A D-67
Description: DIODE SCHOTTKY 200V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH200200R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 200A D-67
Description: DIODE SCHOTTKY 200V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20020L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A D-67
Description: DIODE SCHOTTKY 20V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20020RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A D-67
Description: DIODE SCHOTTKY 20V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20030L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A D-67
Description: DIODE SCHOTTKY 30V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20030RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A D-67
Description: DIODE SCHOTTKY 30V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20035L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A D-67
Description: DIODE SCHOTTKY 35V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20035RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A D-67
Description: DIODE SCHOTTKY 35V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20040L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Description: DIODE SCHOTTKY 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20040RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 200A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
Description: DIODE SCHOTTKY REV 40V 200A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20045L |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A D-67
Description: DIODE SCHOTTKY 45V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRH20045RL |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A D-67
Description: DIODE SCHOTTKY 45V 200A D-67
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120150 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.