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Назва	Виробник	Інформація	Доступність	Ціна
GBPC3510T	GeneSiC Semiconductor	Description: BRIDGE RECT 1PHASE 1KV 35A GBPC Packaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V	товару немає в наявності	В кошику од. на суму грн.
GBPC50005W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 50V 50A GBPC-W Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V	товару немає в наявності	В кошику од. на суму грн.
GBPC5001W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 100V 50A GBPC-W Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V	товару немає в наявності	В кошику од. на суму грн.
GBPC5002W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 200V 50A GBPC-W Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V	товару немає в наявності	В кошику од. на суму грн.
GBPC5008W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 800V 50A GBPC-W Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V	товару немає в наявності	В кошику од. на суму грн.
GKN130/18	GeneSiC Semiconductor	Description: DIODE GP 1.8KV 165A DO205AA	товару немає в наявності	В кошику од. на суму грн.
GKN240/18	GeneSiC Semiconductor	Description: DIODE GP 1.8KV 165A DO205AB	товару немає в наявності	В кошику од. на суму грн.
GKR130/18	GeneSiC Semiconductor	Description: DIODE GP 1.8KV 165A DO205AA	товару немає в наявності	В кошику од. на суму грн.
GKR240/18	GeneSiC Semiconductor	Description: DIODE GP 1.8KV 165A DO205AB	товару немає в наявності	В кошику од. на суму грн.
KBP203G	GeneSiC Semiconductor	Description: BRIDGE RECT 1PHASE 200V 2A KBP Packaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V	товару немає в наявності	В кошику од. на суму грн.
KBPC1501W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 100V 15A KBPC-W Packaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V	товару немає в наявності	В кошику од. на суму грн.
KBPC1504W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 400V 15A KBPC-W Packaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V	товару немає в наявності	В кошику од. на суму грн.
KBPC1508W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 800V 15A KBPC-W Packaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V	товару немає в наявності	В кошику од. на суму грн.
KBPC1510T	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 1KV 15A KBPC-T Packaging: Bulk Package / Case: 4-Square, KBPC-T Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-T Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V	товару немає в наявності	В кошику од. на суму грн.
KBPC1510W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 1KV 15A KBPC-W Packaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V	товару немає в наявності	В кошику од. на суму грн.
KBPC2510T	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 1KV 25A KBPC-T Packaging: Bulk Package / Case: 4-Square, KBPC-T Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-T Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V	товару немає в наявності	В кошику од. на суму грн.
KBPC3510T	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 1KV 35A KBPC-T Packaging: Bulk Package / Case: 4-Square, KBPC-T Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-T Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V	товару немає в наявності	В кошику од. на суму грн.
KBPC50005W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 50V 50A KBPC-W Packaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V	товару немає в наявності	В кошику од. на суму грн.
KBPC5002W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 200V 50A KBPC-W Packaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V	товару немає в наявності	В кошику од. на суму грн.
KBPC5004W	GeneSiC Semiconductor	Description: BRIDGE RECT 1P 400V 50A KBPC-W Packaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V	товару немає в наявності	В кошику од. на суму грн.
M3P75A-40	GeneSiC Semiconductor	Description: DIODE MODULE STD 75A 400V 3PH	товару немає в наявності	В кошику од. на суму грн.
MBR120150CT	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 150V 60A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V	товару немає в наявності	В кошику од. на суму грн.
MBR120150CTR	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 150V 60A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V	товару немає в наявності	В кошику од. на суму грн.
MBR120200CT	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 200V 60A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V	товару немає в наявності	В кошику од. на суму грн.
MBR120200CTR	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 200V 60A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V	товару немає в наявності	В кошику од. на суму грн.
MBR200150CT	GeneSiC Semiconductor	Description: DIODE MOD SCHOT 150V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V	товару немає в наявності	В кошику од. на суму грн.
MBR200150CTR	GeneSiC Semiconductor	Description: DIODE MOD SCHOT 150V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V	товару немає в наявності	В кошику од. на суму грн.
MBR200200CT	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 200V 100A 2 TOWER	товару немає в наявності	В кошику од. на суму грн.
MBR200200CTR	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 200V 100A 2 TOWER	товару немає в наявності	В кошику од. на суму грн.
MBR2X030A060	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 60V 30A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V	товару немає в наявності	В кошику од. на суму грн.
MBR2X030A080	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 80V 30A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 80 V	товару немає в наявності	В кошику од. на суму грн.
MBR2X050A045	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 45V 50A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X050A060	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 60V 50A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X050A080	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 80V 50A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X050A100	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 100V 50A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X050A120	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 120V 50A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X050A150	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 150V 50A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X050A180	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 180V 50A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X060A060	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 60V 60A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X060A080	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 80V 60A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X060A100	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 100V 60A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X060A120	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 120V 60A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X060A150	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 150V 60A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X060A180	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 180V 60A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X060A200	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 200V 60A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X080A060	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 60V 80A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V	товару немає в наявності	В кошику од. на суму грн.
MBR2X080A080	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 80V 80A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 80 V	товару немає в наявності	В кошику од. на суму грн.
MBR2X080A120	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 120V 80A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A Current - Reverse Leakage @ Vr: 3 mA @ 120 V	товару немає в наявності	В кошику од. на суму грн.
MBR2X080A150	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 150V 80A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V	товару немає в наявності	В кошику од. на суму грн.
MBR2X080A180	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 180V 80A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A Current - Reverse Leakage @ Vr: 3 mA @ 180 V	товару немає в наявності	В кошику од. на суму грн.
MBR2X080A200	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 200V 80A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V	товару немає в наявності	В кошику од. на суму грн.
MBR2X100A045	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 45V 100A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X100A060	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 60V 100A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X100A080	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 80V 100A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X100A100	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 100V 100A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X100A120	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 120V 100A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X100A150	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 150V 100A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X100A200	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 200V 100A SOT227	товару немає в наявності	В кошику од. на суму грн.
MBR2X120A060	GeneSiC Semiconductor	Description: DIODE MOD SCHOTT 60V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V	товару немає в наявності	В кошику од. на суму грн.
MBR2X120A080	GeneSiC Semiconductor	Description: DIODE SCHOTTKY 80V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 80 V	товару немає в наявності	В кошику од. на суму грн.

GBPC3510T

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

товару немає в наявності

В кошику од. на суму грн.

GBPC50005W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V

товару немає в наявності

В кошику од. на суму грн.

GBPC5001W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V

товару немає в наявності

В кошику од. на суму грн.

GBPC5002W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V

товару немає в наявності

В кошику од. на суму грн.

GBPC5008W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V

товару немає в наявності

В кошику од. на суму грн.

GKN130/18

Виробник: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AA

товару немає в наявності

В кошику од. на суму грн.

GKN240/18

Виробник: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AB

товару немає в наявності

В кошику од. на суму грн.

GKR130/18

Виробник: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AA

товару немає в наявності

В кошику од. на суму грн.

GKR240/18

Виробник: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AB

товару немає в наявності

В кошику од. на суму грн.

KBP203G

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V

товару немає в наявності

В кошику од. на суму грн.

KBPC1501W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

товару немає в наявності

В кошику од. на суму грн.

KBPC1504W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V

товару немає в наявності

В кошику од. на суму грн.

KBPC1508W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V

товару немає в наявності

В кошику од. на суму грн.

KBPC1510T

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V

товару немає в наявності

В кошику од. на суму грн.

KBPC1510W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

товару немає в наявності

В кошику од. на суму грн.

KBPC2510T

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V

товару немає в наявності

В кошику од. на суму грн.

KBPC3510T

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V

товару немає в наявності

В кошику од. на суму грн.

KBPC50005W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V

товару немає в наявності

В кошику од. на суму грн.

KBPC5002W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V

товару немає в наявності

В кошику од. на суму грн.

KBPC5004W

Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V

товару немає в наявності

В кошику од. на суму грн.

M3P75A-40

Виробник: GeneSiC Semiconductor
Description: DIODE MODULE STD 75A 400V 3PH

товару немає в наявності

В кошику од. на суму грн.

MBR120150CT

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V

товару немає в наявності

В кошику од. на суму грн.

MBR120150CTR

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V

товару немає в наявності

В кошику од. на суму грн.

MBR120200CT

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V

товару немає в наявності

В кошику од. на суму грн.

MBR120200CTR

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V

товару немає в наявності

В кошику од. на суму грн.

MBR200150CT

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V

товару немає в наявності

В кошику од. на суму грн.

MBR200150CTR

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V

товару немає в наявності

В кошику од. на суму грн.

MBR200200CT

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A 2 TOWER

товару немає в наявності

В кошику од. на суму грн.

MBR200200CTR

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A 2 TOWER

товару немає в наявності

В кошику од. на суму грн.

MBR2X030A060

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V

товару немає в наявності

В кошику од. на суму грн.

MBR2X030A080

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V

товару немає в наявності

В кошику од. на суму грн.

MBR2X050A045

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 50A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X050A060

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 50A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X050A080

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 50A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X050A100

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 50A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X050A120

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 50A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X050A150

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 50A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X050A180

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 50A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X060A060

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 60A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X060A080

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 60A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X060A100

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 60A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X060A120

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 60A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X060A150

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 60A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X060A180

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 60A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X060A200

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 60A SOT227

товару немає в наявності

В кошику од. на суму грн.

MBR2X080A060

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V

товару немає в наявності

В кошику од. на суму грн.

MBR2X080A080

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V

товару немає в наявності

В кошику од. на суму грн.

MBR2X080A120

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 120V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V

товару немає в наявності

В кошику од. на суму грн.

MBR2X080A150

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V

товару немає в наявності

В кошику од. на суму грн.

MBR2X080A180

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 180V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V

товару немає в наявності

В кошику од. на суму грн.

MBR2X080A200

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V

товару немає в наявності

В кошику од. на суму грн.

MBR2X100A045

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 100A SOT227

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MBR2X100A060

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 100A SOT227

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MBR2X100A080

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 100A SOT227

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MBR2X100A100

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 100A SOT227

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MBR2X100A120

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 100A SOT227

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MBR2X100A150

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 100A SOT227

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MBR2X100A200

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A SOT227

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MBR2X120A060

Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V

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MBR2X120A080

Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V

товару немає в наявності

В кошику од. на суму грн.

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