Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5687) > Сторінка 20 з 95
| Фото | Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S85V | GeneSiC Semiconductor |  Description: DIODE GEN PURP 1.4KV 85A DO5 | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|  | S85VR | GeneSiC Semiconductor |  Description: DIODE GEN PURP REV 1.4KV 85A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V | на замовлення 600 шт:термін постачання 21-31 дні (днів) | 
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| S85Y | GeneSiC Semiconductor |  Description: DIODE GEN PURP 1.6KV 85A DO5 | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | S85YR | GeneSiC Semiconductor |  Description: DIODE STANDARD REV 1600V 85A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 85A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V | на замовлення 208 шт:термін постачання 21-31 дні (днів) | 
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| SD51 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 45V 60A DO5 | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| SD51R | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY REV 45V DO5 | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| W005M | GeneSiC Semiconductor |  Description: BRIDGE RECT 1PHASE 50V 1.5A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|  | W01M | GeneSiC Semiconductor |  Description: BRIDGE RECT 1PHASE 100V 1.5A WOM | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|  | W02M | GeneSiC Semiconductor |  Description: BRIDGE RECT 1PHASE 200V 1.5A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| W04M | GeneSiC Semiconductor |  Description: BRIDGE RECT 1PHASE 400V 1.5A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| W06M | GeneSiC Semiconductor |    Description: BRIDGE RECT 1PHASE 600V 1.5A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| W08M | GeneSiC Semiconductor |    Description: BRIDGE RECT 1PHASE 800V 1.5A WOM Packaging: Bulk Package / Case: 4-Circular, WOM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | GA50JT17-247 | GeneSiC Semiconductor |  Description: TRANS SJT 1.7KV 100A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|  | GA03IDDJT30-FR4 | GeneSiC Semiconductor |  Description: BOARD GATE DRIVER Packaging: Bulk Function: Gate Driver Type: Power Management Supplied Contents: Board(s) Primary Attributes: Isolated | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| GA15IDDJT22-FR4 | GeneSiC Semiconductor | Description: BOARD GATE DRIVER Packaging: Bulk Function: Gate Driver Type: Power Management Supplied Contents: Board(s) Primary Attributes: Isolated | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | GA100SBJT12-FR4 | GeneSiC Semiconductor |  Description: BOARD EVAL DBL PULSE | на замовлення 2 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
|  | GA05JT01-46 | GeneSiC Semiconductor |  Description: TRANS SJT 100V 9A | на замовлення 94 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
|  | GA05JT03-46 | GeneSiC Semiconductor |  Description: TRANS SJT 300V 9A | на замовлення 67 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
| GA50JT06-258 | GeneSiC Semiconductor |  Description: TRANS SJT 600V 100A | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|  | GB02SHT01-46 | GeneSiC Semiconductor |  Description: DIODE SIL CARBIDE 100V 4A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 210°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 57 шт:термін постачання 21-31 дні (днів) | 
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|  | GB02SHT03-46 | GeneSiC Semiconductor |  Description: DIODE SIL CARBIDE 300V 4A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 225°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V | на замовлення 47 шт:термін постачання 21-31 дні (днів) | 
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|  | GB02SHT06-46 | GeneSiC Semiconductor |  Description: DIODE SIL CARBIDE 600V 4A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 225°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | GAP05SLT80-220 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 8KV 50MA AXIAL | на замовлення 9 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
|   | GA01PNS150-220 | GeneSiC Semiconductor |  Description: RF DIODE PIN 15000V Packaging: Tube Package / Case: Axial Diode Type: PIN - Single Operating Temperature: -55°C ~ 175°C (TJ) Capacitance @ Vr, F: 7pF @ 1000V, 1MHz Voltage - Peak Reverse (Max): 15000V Part Status: Active Current - Max: 1 A | на замовлення 3 шт:термін постачання 21-31 дні (днів) | 
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|   | GA01PNS80-220 | GeneSiC Semiconductor |  Description: RF DIODE PIN 8000V Packaging: Tube Package / Case: Axial Diode Type: PIN - Single Operating Temperature: -55°C ~ 175°C (TJ) Capacitance @ Vr, F: 4pF @ 1000V, 1MHz Voltage - Peak Reverse (Max): 8000V Current - Max: 2 A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | GB02SLT12-252 | GeneSiC Semiconductor |  Description: DIODE SIL CARBIDE 1.2KV 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MBR2X030A045 | GeneSiC Semiconductor |  Description: DIODE MOD SCHOTT 45V 60A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V | на замовлення 39 шт:термін постачання 21-31 дні (днів) | 
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|   | MBR2X030A100 | GeneSiC Semiconductor |  Description: DIODE MOD SCHOTT 100V 60A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MBR2X050A200 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 200V 100A SOT227 | на замовлення 20 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
|   | MBR2X060A045 | GeneSiC Semiconductor |  Description: DIODE MOD SCHOTT 45V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MBR2X080A045 | GeneSiC Semiconductor |  Description: DIODE MOD SCHOTT 45V 80A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V | на замовлення 29 шт:термін постачання 21-31 дні (днів) | 
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|   | MBR2X080A100 | GeneSiC Semiconductor |  Description: DIODE MOD SCHOTT 100V 80A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MBR2X100A180 | GeneSiC Semiconductor |  Description: DIODE MOD SCHOT 180V 100A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 180 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MBR2X120A045 | GeneSiC Semiconductor |  Description: DIODE MOD SCHOTT 45V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V | на замовлення 144 шт:термін постачання 21-31 дні (днів) | 
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|   | MUR2X030A02 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 200V 30A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MUR2X030A06 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 30A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MUR2X030A10 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 1000V 30A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MUR2X030A12 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 1200V 30A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MUR2X060A02 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 200V 60A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | на замовлення 56 шт:термін постачання 21-31 дні (днів) | 
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|   | MUR2X060A04 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 400V 60A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MUR2X060A06 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 60A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MUR2X100A02 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 200V 100A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MUR2X100A04 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 400V 100A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | на замовлення 12 шт:термін постачання 21-31 дні (днів) | 
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|   | GBPC2504W | GeneSiC Semiconductor |  Description: BRIDGE RECT 1P 400V 25A GBPC-W Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 740 шт:термін постачання 21-31 дні (днів) | 
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|   | GBPC2508W | GeneSiC Semiconductor |  Description: BRIDGE RECT 1P 800V 25A GBPC-W Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | на замовлення 1955 шт:термін постачання 21-31 дні (днів) | 
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|   | GBPC3508W | GeneSiC Semiconductor |  Description: BRIDGE RECT 1P 800V 35A GBPC-W Packaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | на замовлення 496 шт:термін постачання 21-31 дні (днів) | 
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|   | FST100150 | GeneSiC Semiconductor |  Description: DIODE MOD SCHOT 150V 50A TO249AB Packaging: Bulk Package / Case: TO-249AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: TO-249AB Operating Temperature - Junction: -55°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST100200 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 200V 50A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST120150 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 150V 60A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST120200 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 200V 60A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST160150 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 150V 80A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST160200 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 200V 80A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST16020L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 80A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST16030L | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 30V 80A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST16035L | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 35V 80A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST16040L | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 40V 80A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | FST16045L | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 45V 80A TO249AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|  | GA040TH65-227SP | GeneSiC Semiconductor |  Description: MOD THYRISTOR CUSTOM SOT227 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|  | GA060TH65-227SP | GeneSiC Semiconductor |  Description: MOD THYRISTOR CUSTOM SOT227 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|  | GA080TH65-227SP | GeneSiC Semiconductor |  Description: MOD THYRISTOR CUSTOM SOT227 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Structure: Single Current - Gate Trigger (Igt) (Max): 100 mA Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 80 A Current - On State (It (RMS)) (Max): 139 A Voltage - Off State: 6.5 kV | товару немає в наявності | В кошику од. на суму грн. | 
| S85V |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.4KV 85A DO5
    Description: DIODE GEN PURP 1.4KV 85A DO5
товару немає в наявності
    В кошику
     од. на суму     грн.
| S85VR |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.4KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
    Description: DIODE GEN PURP REV 1.4KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 1262.27 грн | 
| 10+ | 1022.85 грн | 
| 25+ | 963.88 грн | 
| S85Y |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 85A DO5
    Description: DIODE GEN PURP 1.6KV 85A DO5
товару немає в наявності
    В кошику
     од. на суму     грн.
| S85YR |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD REV 1600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
    Description: DIODE STANDARD REV 1600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 208 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 1120.18 грн | 
| 10+ | 908.14 грн | 
| 25+ | 848.09 грн | 
| 100+ | 717.73 грн | 
| SD51 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 60A DO5
    Description: DIODE SCHOTTKY 45V 60A DO5
товару немає в наявності
    В кошику
     од. на суму     грн.
| SD51R |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V DO5
    Description: DIODE SCHOTTKY REV 45V DO5
товару немає в наявності
    В кошику
     од. на суму     грн.
| W005M |  | 
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
    Description: BRIDGE RECT 1PHASE 50V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| W01M |  | 
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1.5A WOM
    Description: BRIDGE RECT 1PHASE 100V 1.5A WOM
товару немає в наявності
    В кошику
     од. на суму     грн.
| W02M |  | 
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
    Description: BRIDGE RECT 1PHASE 200V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| W04M |  | 
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
    Description: BRIDGE RECT 1PHASE 400V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| W06M |  |  | 
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
    Description: BRIDGE RECT 1PHASE 600V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| W08M |  |  | 
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
    Description: BRIDGE RECT 1PHASE 800V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| GA50JT17-247 |  | 
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1.7KV 100A
    Description: TRANS SJT 1.7KV 100A
товару немає в наявності
    В кошику
     од. на суму     грн.
| GA03IDDJT30-FR4 |  | 
Виробник: GeneSiC Semiconductor
Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
    Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
товару немає в наявності
    В кошику
     од. на суму     грн.
| GA15IDDJT22-FR4 | 
Виробник: GeneSiC Semiconductor
Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
    Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
товару немає в наявності
    В кошику
     од. на суму     грн.
| GA100SBJT12-FR4 |  | 
Виробник: GeneSiC Semiconductor
Description: BOARD EVAL DBL PULSE
    Description: BOARD EVAL DBL PULSE
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| GA05JT01-46 |  | 
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 100V 9A
    Description: TRANS SJT 100V 9A
на замовлення 94 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| GA05JT03-46 |  | 
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 300V 9A
    Description: TRANS SJT 300V 9A
на замовлення 67 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| GA50JT06-258 |  | 
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 600V 100A
    Description: TRANS SJT 600V 100A
товару немає в наявності
    В кошику
     од. на суму     грн.
| GB02SHT01-46 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 100V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 210°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
    Description: DIODE SIL CARBIDE 100V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 210°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 57 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 3388.62 грн | 
| GB02SHT03-46 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 300V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
    Description: DIODE SIL CARBIDE 300V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 3677.75 грн | 
| 10+ | 3155.65 грн | 
| GB02SHT06-46 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 600V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
    Description: DIODE SIL CARBIDE 600V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| GAP05SLT80-220 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 8KV 50MA AXIAL
    Description: DIODE SCHOTTKY 8KV 50MA AXIAL
на замовлення 9 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| GA01PNS150-220 |  | 
Виробник: GeneSiC Semiconductor
Description: RF DIODE PIN 15000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 7pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Part Status: Active
Current - Max: 1 A
    Description: RF DIODE PIN 15000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 7pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Part Status: Active
Current - Max: 1 A
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 37087.32 грн | 
| GA01PNS80-220 |  | 
Виробник: GeneSiC Semiconductor
Description: RF DIODE PIN 8000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 4pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 8000V
Current - Max: 2 A
    Description: RF DIODE PIN 8000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 4pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 8000V
Current - Max: 2 A
товару немає в наявності
    В кошику
     од. на суму     грн.
| GB02SLT12-252 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
    Description: DIODE SIL CARBIDE 1.2KV 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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| MBR2X030A045 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
    Description: DIODE MOD SCHOTT 45V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 3448.93 грн | 
| 10+ | 2855.98 грн | 
| 25+ | 2689.57 грн | 
| MBR2X030A100 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
    Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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| MBR2X050A200 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A SOT227
    Description: DIODE SCHOTTKY 200V 100A SOT227
на замовлення 20 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MBR2X060A045 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
    Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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| MBR2X080A045 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 80A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
    Description: DIODE MOD SCHOTT 45V 80A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 4267.58 грн | 
| 10+ | 3566.28 грн | 
| 25+ | 3370.51 грн | 
| MBR2X080A100 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
    Description: DIODE MOD SCHOTT 100V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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| MBR2X100A180 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 180V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
    Description: DIODE MOD SCHOT 180V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
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| MBR2X120A045 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
    Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 4042.89 грн | 
| 10+ | 3388.17 грн | 
| 25+ | 3206.06 грн | 
| 50+ | 2885.56 грн | 
| 100+ | 2767.36 грн | 
| MUR2X030A02 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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| MUR2X030A06 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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| MUR2X030A10 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
    Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
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| MUR2X030A12 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
    Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
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| MUR2X060A02 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 3726.49 грн | 
| 10+ | 3092.24 грн | 
| 25+ | 2914.37 грн | 
| 50+ | 2615.18 грн | 
| MUR2X060A04 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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| MUR2X060A06 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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| MUR2X100A02 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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| MUR2X100A04 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 4137.06 грн | 
| 10+ | 3451.57 грн | 
| GBPC2504W |  | 
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
    Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 740 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 295.74 грн | 
| 10+ | 226.48 грн | 
| 25+ | 206.80 грн | 
| 100+ | 169.06 грн | 
| 250+ | 154.36 грн | 
| 500+ | 144.05 грн | 
| GBPC2508W |  | 
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
    Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 297.39 грн | 
| 10+ | 227.91 грн | 
| 25+ | 208.13 грн | 
| 100+ | 170.15 грн | 
| 250+ | 155.36 грн | 
| 500+ | 144.98 грн | 
| 1000+ | 133.10 грн | 
| GBPC3508W |  | 
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
    Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 496 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 327.13 грн | 
| 10+ | 252.89 грн | 
| 25+ | 231.74 грн | 
| 100+ | 190.58 грн | 
| 250+ | 174.63 грн | 
| FST100150 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 50A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
    Description: DIODE MOD SCHOT 150V 50A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
    В кошику
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| FST100200 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 50A TO249AB
    Description: DIODE SCHOTTKY 200V 50A TO249AB
товару немає в наявності
    В кошику
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| FST120150 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 60A TO249AB
    Description: DIODE SCHOTTKY 150V 60A TO249AB
товару немає в наявності
    В кошику
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| FST120200 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 60A TO249AB
    Description: DIODE SCHOTTKY 200V 60A TO249AB
товару немає в наявності
    В кошику
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| FST160150 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 80A TO249AB
    Description: DIODE SCHOTTKY 150V 80A TO249AB
товару немає в наявності
    В кошику
     од. на суму     грн.
| FST160200 |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 80A TO249AB
    Description: DIODE SCHOTTKY 200V 80A TO249AB
товару немає в наявності
    В кошику
     од. на суму     грн.
| FST16020L | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 80A TO249AB
    Description: DIODE SCHOTTKY 20V 80A TO249AB
товару немає в наявності
    В кошику
     од. на суму     грн.
| FST16030L |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 80A TO249AB
    Description: DIODE SCHOTTKY 30V 80A TO249AB
товару немає в наявності
    В кошику
     од. на суму     грн.
| FST16035L |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A TO249AB
    Description: DIODE SCHOTTKY 35V 80A TO249AB
товару немає в наявності
    В кошику
     од. на суму     грн.
| FST16040L |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 80A TO249AB
    Description: DIODE SCHOTTKY 40V 80A TO249AB
товару немає в наявності
    В кошику
     од. на суму     грн.
| FST16045L |  | 
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 80A TO249AB
    Description: DIODE SCHOTTKY 45V 80A TO249AB
товару немає в наявності
    В кошику
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| GA040TH65-227SP |  | 
Виробник: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
    Description: MOD THYRISTOR CUSTOM SOT227
товару немає в наявності
    В кошику
     од. на суму     грн.
| GA060TH65-227SP |  | 
Виробник: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
    Description: MOD THYRISTOR CUSTOM SOT227
товару немає в наявності
    В кошику
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| GA080TH65-227SP |  | 
Виробник: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
    Description: MOD THYRISTOR CUSTOM SOT227
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
товару немає в наявності
    В кошику
     од. на суму     грн.