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IXTK180N15P IXTK180N15P IXYS IXTK180N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
1+1043.32 грн
5+838.60 грн
10+762.58 грн
25+756.92 грн
В кошику  од. на суму  грн.
IXTA15P15T IXTA15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTY15P15T IXTY15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTQ96N15P IXTQ96N15P IXYS IXTQ96N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA62N15P IXTA62N15P IXYS IXTA62N15P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTQ62N15P IXTQ62N15P IXYS IXTA62N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTR62N15P IXTR62N15P IXYS IXTR62N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
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IXTT96N15P IXTT96N15P IXYS IXTQ96N15P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA44P15T IXTA44P15T IXYS IXT_44P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
1+444.15 грн
5+346.92 грн
10+313.77 грн
50+270.10 грн
В кошику  од. на суму  грн.
IXTP44P15T IXTP44P15T IXYS IXT_44P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
на замовлення 289 шт:
термін постачання 21-30 дні (днів)
2+395.38 грн
10+257.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH44P15T IXTH44P15T IXYS IXT_44P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
1+553.88 грн
3+453.67 грн
10+365.52 грн
30+361.48 грн
В кошику  од. на суму  грн.
CLA16E800PN CLA16E800PN IXYS CLA16E800PN.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 0.8kV
Case: TO220FP
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
4+120.18 грн
5+97.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PLA160S PLA160S IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
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PLA160STR IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
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MMIX1F132N50P3
+1
 		MMIX1F132N50P3 IXYS littelfuse-discrete-mosfets-mmix1f132n50p3-datasheet?assetguid=78cb4333-d3a9-496a-a626-6ed7394c5316 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+3553.20 грн
3+2917.70 грн
10+2620.11 грн
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IXFN132N50P3 IXFN132N50P3 IXYS IXFN132N50P3.pdf Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 500V; 112A; SOT227B
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
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IXFB132N50P3 IXFB132N50P3 IXYS IXFB132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
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IXFL132N50P3 IXFL132N50P3 IXYS IXFL132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
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IXTY01N100 IXTY01N100 IXYS IXTU(Y)01N100.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
4+141.95 грн
5+116.45 грн
25+105.13 грн
70+102.70 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTP32P20T IXTP32P20T IXYS IXT_32P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+580.01 грн
5+438.30 грн
10+397.06 грн
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IXTP32P05T IXTP32P05T IXYS IXT_32P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
2+221.20 грн
10+173.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP30N25X3M IXFP30N25X3M IXYS IXFP30N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
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IXFA30N25X3 IXFA30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
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IXTH1N450HV IXTH1N450HV IXYS IXTH(T)1N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+2688.41 грн
5+2465.65 грн
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MCMA110P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTK180N15P IXTK180N15P-DTE.pdf
IXTK180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1043.32 грн
5+838.60 грн
10+762.58 грн
25+756.92 грн
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IXTA15P15T IXT_15P15T.pdf
IXTA15P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTY15P15T IXT_15P15T.pdf
IXTY15P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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IXTQ96N15P IXTQ96N15P-DTE.pdf
IXTQ96N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA62N15P IXTA62N15P-DTE.pdf
IXTA62N15P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTQ62N15P IXTA62N15P-DTE.pdf
IXTQ62N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTR62N15P IXTR62N15P.pdf
IXTR62N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
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IXTT96N15P IXTQ96N15P-DTE.pdf
IXTT96N15P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA44P15T IXT_44P15T.pdf
IXTA44P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+444.15 грн
5+346.92 грн
10+313.77 грн
50+270.10 грн
В кошику  од. на суму  грн.
IXTP44P15T IXT_44P15T.pdf
IXTP44P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
на замовлення 289 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+395.38 грн
10+257.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH44P15T IXT_44P15T.pdf
IXTH44P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+553.88 грн
3+453.67 грн
10+365.52 грн
30+361.48 грн
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CLA16E800PN CLA16E800PN.pdf
CLA16E800PN
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 0.8kV
Case: TO220FP
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+120.18 грн
5+97.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PLA160S PLA160.pdf
PLA160S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
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PLA160STR PLA160.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
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MMIX1F132N50P3 littelfuse-discrete-mosfets-mmix1f132n50p3-datasheet?assetguid=78cb4333-d3a9-496a-a626-6ed7394c5316
MMIX1F132N50P3
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3553.20 грн
3+2917.70 грн
10+2620.11 грн
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IXFN132N50P3 IXFN132N50P3.pdf
IXFN132N50P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 500V; 112A; SOT227B
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
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IXFB132N50P3 IXFB132N50P3.pdf
IXFB132N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
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IXFL132N50P3 IXFL132N50P3.pdf
IXFL132N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
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IXTY01N100 IXTU(Y)01N100.pdf
IXTY01N100
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+141.95 грн
5+116.45 грн
25+105.13 грн
70+102.70 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTP32P20T IXT_32P20T.pdf
IXTP32P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+580.01 грн
5+438.30 грн
10+397.06 грн
В кошику  од. на суму  грн.
IXTP32P05T IXT_32P05T.pdf
IXTP32P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+221.20 грн
10+173.87 грн
Мінімальне замовлення: 2
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IXFP30N25X3M IXFP30N25X3M.pdf
IXFP30N25X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
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IXFA30N25X3 IXFA(P,Y)30N25X3.pdf
IXFA30N25X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
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IXTH1N450HV IXTH(T)1N450HV.pdf
IXTH1N450HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2688.41 грн
5+2465.65 грн
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MCMA110P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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