| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXFX220N17T2 | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 220A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.3mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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LCA220 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC Case: DIP8 On-state resistance: 20Ω Mounting: THT Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Max. operating current: 120mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPDT Operating temperature: -40...85°C |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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DSA50C100HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 25A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.72V Max. forward impulse current: 0.44kA Power dissipation: 160W Kind of package: tube |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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DSA30C100HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.72V Max. forward impulse current: 340A Power dissipation: 85W Kind of package: tube |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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IXTP62N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB Case: TO220AB Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PolarHT™ Kind of package: tube Polarisation: unipolar Drain-source voltage: 150V Drain current: 62A Gate charge: 70nC Reverse recovery time: 150ns On-state resistance: 40mΩ Power dissipation: 350W Gate-source voltage: ±20V |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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IXTK180N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 180A Power dissipation: 800W Case: TO264 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
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IXTA15P15T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -15A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 116ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTY15P15T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -15A Power dissipation: 150W Case: TO252 Gate-source voltage: ±15V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 116ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTQ96N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 96A Power dissipation: 480W Case: TO3P Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTA62N15P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 62A Power dissipation: 350W Case: TO263 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTQ62N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 62A Power dissipation: 350W Case: TO3P Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTR62N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 36A Power dissipation: 150W Case: ISOPLUS247™ On-state resistance: 45mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Features of semiconductor devices: standard power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTT96N15P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 96A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTA44P15T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263 Case: TO263 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Gate charge: 175nC Reverse recovery time: 140ns On-state resistance: 65mΩ Power dissipation: 298W Gate-source voltage: ±15V |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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IXTP44P15T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns Case: TO220AB Mounting: THT Kind of channel: enhancement Type of transistor: P-MOSFET Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Gate charge: 175nC Reverse recovery time: 140ns On-state resistance: 65mΩ Power dissipation: 298W Gate-source voltage: ±15V |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
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IXTH44P15T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns Case: TO247-3 Mounting: THT Kind of channel: enhancement Type of transistor: P-MOSFET Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Gate charge: 175nC Reverse recovery time: 140ns On-state resistance: 65mΩ Power dissipation: 298W Gate-source voltage: ±15V |
на замовлення 304 шт: термін постачання 21-30 дні (днів) |
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CLA16E800PN | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube Mounting: THT Type of thyristor: thyristor Kind of package: tube Gate current: 50mA Load current: 10A Max. load current: 16A Max. forward impulse current: 195A Max. off-state voltage: 0.8kV Case: TO220FP |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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PLA160S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-on time: 50µs Turn-off time: 50µs Body dimensions: 8.38x6.35x3.3mm Max. operating current: 50mA Control current max.: 50mA Control voltage: 1.8...2.8V DC On-state resistance: 100Ω Switched voltage: max. 300V AC; max. 300V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS Case: DIP6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| PLA160STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-on time: 50µs Turn-off time: 50µs Body dimensions: 8.38x6.35x3.3mm Max. operating current: 50mA Control current max.: 50mA Control voltage: 1.8...2.8V DC On-state resistance: 100Ω Switched voltage: max. 300V AC; max. 300V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS Case: DIP6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 +1 |
MMIX1F132N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Case: SMPD Gate-source voltage: ±30V On-state resistance: 43mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 267nC Reverse recovery time: 250ns Pulsed drain current: 330A Power dissipation: 520W Technology: HiPerFET™; Polar3™ |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXFN132N50P3 | IXYS |
Category: Transistor modules MOSFET Description: Semiconductor module; single transistor; 500V; 112A; SOT227B Polarisation: unipolar Drain-source voltage: 500V Drain current: 112A Case: SOT227B Gate-source voltage: ±40V On-state resistance: 39mΩ Kind of channel: enhancement Semiconductor structure: single transistor Gate charge: 250nC Reverse recovery time: 250ns Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor Pulsed drain current: 330A Power dissipation: 1.5kW Technology: HiPerFET™; Polar™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFB132N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 267nC Reverse recovery time: 250ns Power dissipation: 1890W Technology: HiPerFET™; Polar3™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFL132N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Case: ISOPLUS264™ On-state resistance: 43mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 250nC Power dissipation: 520W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTY01N100 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.1A Power dissipation: 25W Case: TO252 On-state resistance: 80Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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IXTP32P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Case: TO220AB Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -32A Reverse recovery time: 190ns Gate charge: 185nC On-state resistance: 0.13Ω Gate-source voltage: ±15V Power dissipation: 300W |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXTP32P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Case: TO220AB Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -50V Drain current: -32A Reverse recovery time: 26ns Gate charge: 46nC On-state resistance: 39mΩ Gate-source voltage: ±15V Power dissipation: 83W |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXFP30N25X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 36W Case: TO220FP On-state resistance: 60mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 82ns Features of semiconductor devices: ultra junction x-class |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFA30N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 82ns Features of semiconductor devices: ultra junction x-class |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTH1N450HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1A Power dissipation: 520W Case: TO247-3 On-state resistance: 80Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs Gate charge: 46nC |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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| MCMA110P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 110A Max. load current: 170A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.9kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IXGH10N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 29nC Turn-on time: 107ns Turn-off time: 240ns Collector current: 5A Pulsed collector current: 20A Gate-emitter voltage: ±20V Power dissipation: 140W Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Type of transistor: IGBT Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXGH10N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 32nC Turn-on time: 0.3µs Turn-off time: 630ns Collector current: 10A Pulsed collector current: 70A Gate-emitter voltage: ±20V Power dissipation: 110W Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Type of transistor: IGBT Technology: NPT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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LF2103NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 10...20V Voltage class: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1563G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Type of relay: solid state Max. operating current: 120mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Turn-off time: 2ms Turn-on time: 2ms Control current max.: 50mA On-state resistance: 35Ω Insulation voltage: 3.75kV Case: DIP6 Mounting: THT |
на замовлення 338 шт: термін постачання 21-30 дні (днів) |
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DSB20C60PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V Type of diode: Schottky rectifying Case: TO220FP Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.62V Max. forward impulse current: 0.24kA Kind of package: tube Power dissipation: 30W |
на замовлення 399 шт: термін постачання 21-30 дні (днів) |
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DSA20C60PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V Type of diode: Schottky rectifying Case: TO220FP Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.7V Max. forward impulse current: 0.24kA Kind of package: tube Power dissipation: 35W |
на замовлення 151 шт: термін постачання 21-30 дні (днів) |
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IXTP24P085T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -24A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFX220N17T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 899.70 грн |
| 3+ | 743.68 грн |
| 10+ | 689.76 грн |
| LCA220 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
On-state resistance: 20Ω
Mounting: THT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
On-state resistance: 20Ω
Mounting: THT
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 120mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 435.12 грн |
| 10+ | 328.38 грн |
| 50+ | 288.14 грн |
| DSA50C100HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 0.44kA
Power dissipation: 160W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 0.44kA
Power dissipation: 160W
Kind of package: tube
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 273.90 грн |
| 3+ | 229.38 грн |
| 10+ | 202.82 грн |
| 30+ | 185.12 грн |
| DSA30C100HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 173.04 грн |
| 10+ | 152.92 грн |
| 30+ | 139.24 грн |
| IXTP62N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Gate charge: 70nC
Reverse recovery time: 150ns
On-state resistance: 40mΩ
Power dissipation: 350W
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Gate charge: 70nC
Reverse recovery time: 150ns
On-state resistance: 40mΩ
Power dissipation: 350W
Gate-source voltage: ±20V
на замовлення 261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 312.90 грн |
| 10+ | 188.34 грн |
| 50+ | 181.09 грн |
| IXTK180N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 180A; 800W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
на замовлення 144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1038.38 грн |
| 5+ | 834.63 грн |
| 10+ | 758.98 грн |
| 25+ | 753.34 грн |
| IXTA15P15T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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| IXTY15P15T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
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| IXTQ96N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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| IXTA62N15P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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| IXTQ62N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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| IXTR62N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
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| IXTT96N15P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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| IXTA44P15T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 442.05 грн |
| 5+ | 345.28 грн |
| 10+ | 312.28 грн |
| 50+ | 268.82 грн |
| IXTP44P15T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
на замовлення 289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 393.51 грн |
| 10+ | 256.75 грн |
| IXTH44P15T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
на замовлення 304 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 551.26 грн |
| 3+ | 451.52 грн |
| 10+ | 363.79 грн |
| 30+ | 359.77 грн |
| CLA16E800PN |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 0.8kV
Case: TO220FP
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 0.8kV
Case: TO220FP
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.61 грн |
| 5+ | 97.39 грн |
| PLA160S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
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| PLA160STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
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| MMIX1F132N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3536.40 грн |
| 3+ | 2903.91 грн |
| 10+ | 2607.72 грн |
| IXFN132N50P3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 500V; 112A; SOT227B
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 500V; 112A; SOT227B
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
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| IXFB132N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
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| IXFL132N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
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| IXTY01N100 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
на замовлення 350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 141.28 грн |
| 5+ | 115.90 грн |
| 25+ | 104.63 грн |
| 70+ | 102.22 грн |
| IXTP32P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 577.27 грн |
| 5+ | 436.23 грн |
| 10+ | 395.18 грн |
| IXTP32P05T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.16 грн |
| 10+ | 173.04 грн |
| IXFP30N25X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
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| IXFA30N25X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
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| IXTH1N450HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2675.70 грн |
| 5+ | 2454.00 грн |
| MCMA110P1600TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| IXGH10N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
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| IXGH10N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
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| LF2103NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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| CPC1563G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
на замовлення 338 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 324.17 грн |
| 50+ | 197.19 грн |
| DSB20C60PN |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 30W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 30W
на замовлення 399 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.07 грн |
| 15+ | 27.53 грн |
| DSA20C60PN |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 35W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.7V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 35W
на замовлення 151 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.68 грн |
| 7+ | 61.97 грн |
| 10+ | 55.53 грн |
| 50+ | 49.90 грн |
| IXTP24P085T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
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