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IXTA230N04T4 IXTA230N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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DSEP29-06A DSEP29-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82786FD2576143&compId=DSEP29-06A.pdf?ci_sign=82b5f05dc3fbb9ce8d39aa34aa78df78ee791b35 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
2+306.56 грн
10+172.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP29-06B DSEP29-06B IXYS Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 25ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.52V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
2+257.62 грн
10+176.22 грн
Мінімальне замовлення: 2
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IXFH34N50P3 IXFH34N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 0.18Ω
Drain current: 34A
Power dissipation: 695W
Drain-source voltage: 500V
Kind of channel: enhancement
Case: TO247-3
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
1+708.44 грн
10+542.22 грн
30+413.84 грн
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CPC1718J CPC1718J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49316DB8320C7&compId=CPC1718.pdf?ci_sign=bfe670bb7367963f0d1f7cc03edd903cea5b35fc Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
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IXFA14N60P IXFA14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFH14N60P IXFH14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXTA14N60P IXTA14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTP14N60P IXTP14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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CPC1333G CPC1333G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1333GRTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXTP96P085T IXTP96P085T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09915A690F8BF&compId=IXT_96P085T.pdf?ci_sign=2aa751399db2183305198d4805b69b6937f7379e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
2+400.16 грн
10+252.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEI60-06A DSEI60-06A IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FB5F1A6F5005056AB5A8F&compId=DSEI60-06A.pdf?ci_sign=42521ecd82a6487195d59776bc2a7ad81b015792 description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.55kA
Case: TO247-2
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 393 шт:
термін постачання 21-30 дні (днів)
1+462.85 грн
5+355.63 грн
10+346.06 грн
В кошику  од. на суму  грн.
DSEI60-10A DSEI60-10A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA3054AF872E469&compId=DSEI60-10A.pdf?ci_sign=8762e46d76ad8c4b0191b7d9243f59d3beaf30e4 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
1+452.55 грн
5+362.81 грн
В кошику  од. на суму  грн.
IXYX40N250CHV IXYX40N250CHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB02E3997DFB820&compId=IXYX40N250CHV.pdf?ci_sign=2d191498aa703376848cc72ab126f0b3d316eb60 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
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IXYX100N120B3 IXYX100N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADD33AF7E1F820&compId=IXYX100N120B3.pdf?ci_sign=a971886d073e07e1aad4c66229bcf59f49c76f6c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
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IXYX40N450HV IXYX40N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 40A
Power dissipation: 660W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 786ns
Turn-off time: 1128ns
Features of semiconductor devices: high voltage
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IXYX100N120C3 IXYX100N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADC5715FFE3820&compId=IXYK(x)100N120C3.pdf?ci_sign=b18916030673c42465debafc009f682214d8ef11 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
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IXYX200N65B3 IXYX200N65B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA737D77A5B820&compId=IXYK(x)200N65B3.pdf?ci_sign=25c65d7ed38fb9d55168d232a11941b535e1f252 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.56kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 170ns
Turn-off time: 700ns
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IXYX25N250CV1HV IXYX25N250CV1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8F60D6FA03820&compId=IXYX25N250CV1.pdf?ci_sign=86c780b170d5459c6b833261247dd0b63baeb821 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 25A; 937W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 937W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 235A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 575ns
Features of semiconductor devices: high voltage
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IXYX30N170CV1 IXYX30N170CV1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB407A41D3B8BF&compId=IXY_30N170CV1.pdf?ci_sign=e9235ed1111ff6a0b95423dcfa0ecfe975d873a2 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 30A; 937W; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 30A
Power dissipation: 937W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 49ns
Turn-off time: 327ns
Features of semiconductor devices: high voltage
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IXYX140N90C3 IXYX140N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB36CF0F167820&compId=IXYK(X)140N90C3.pdf?ci_sign=ff461166cb57c441f4d71986b43376cd7e351146 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
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IXYX25N250CV1 IXYX25N250CV1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8F60D6FA03820&compId=IXYX25N250CV1.pdf?ci_sign=86c780b170d5459c6b833261247dd0b63baeb821 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 25A; 937W; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 937W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 235A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 575ns
Features of semiconductor devices: high voltage
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DMA90U1800LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 350A
Electrical mounting: SMT
Max. forward voltage: 1.26V
Case: SMPD
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CLA30E1200NPZ-TUB CLA30E1200NPZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B90F0FAA20C4&compId=CLA30E1200NPZ.pdf?ci_sign=74c61ec5f4c10fe423b76f023345972834cee38e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 30/50mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 255A
Features of semiconductor devices: two gate polarities
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MEK150-04DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.4kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.4V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
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MCD250-08io1 IXYS MCC,MCD_250.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 9kA
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MCD250-12io1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 287A x2
Max. load current: 450A
Case: W102
Max. forward voltage: 1.36V
Threshold on-voltage: 0.85V
Max. forward impulse current: 9kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Kind of package: bulk
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MCD250-14io1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9kA
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MCD250-16io1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9kA
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MCD250-18IO1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9kA
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IXTH02N450HV IXTH02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Mounting: THT
Reverse recovery time: 1.6µs
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
On-state resistance: 625Ω
Drain current: 0.2A
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFH80N65X2 IXFH80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
1+905.95 грн
3+786.22 грн
5+725.62 грн
В кошику  од. на суму  грн.
IXFH80N65X2-4 IXFH80N65X2-4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5825B99978BF&compId=IXFH80N65X2-4.pdf?ci_sign=e1124f754bcfef97bf067a342d7350d292757c2c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1007.28 грн
5+839.65 грн
10+752.73 грн
В кошику  од. на суму  грн.
IXFK80N65X2 IXFK80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+1661.62 грн
В кошику  од. на суму  грн.
IXTH80N65X2 IXTH80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB1FA4137F58BF&compId=IXTH80N65X2.pdf?ci_sign=d8bfcad20b59804a9aa6f35033565e0055cc9678 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
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IXFT80N65X2HV IXFT80N65X2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5DDDF247B8BF&compId=IXFT80N65X2HV.pdf?ci_sign=8483671aa3976023c370bf7e90b7e5ebca15d53c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXXH80N65B4D1 IXXH80N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 123ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
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IXTT8P50 IXTT8P50 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E9CDAEE7EB8BF&compId=IXT_8P50.pdf?ci_sign=d6b8da636dc8394c03e72a7f3dcbe95461b9557a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO268; 400ns
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO268
Kind of package: tube
Drain-source voltage: -500V
Drain current: -8A
Reverse recovery time: 400ns
Gate charge: 130nC
On-state resistance: 1.2Ω
Gate-source voltage: ±20V
Power dissipation: 180W
Polarisation: unipolar
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+600.25 грн
3+491.99 грн
10+441.75 грн
В кошику  од. на суму  грн.
IXFN210N20P IXFN210N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8DD4ECD3A9820&compId=IXFN210N20P.pdf?ci_sign=90a440251c814329b6b181c212ef3f018c2848cf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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UGE1112AY4 UGE1112AY4 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3B6C180C340C4&compId=UGE1112AY4.pdf?ci_sign=cae9bbd30d6c6d860a4759f7d894d24f362940b8 Category: Diodes - others
Description: Diode: rectifying; 8kV; 2/3.2/4.2A; 7A; 2.5kW; Ø55x23mm; Ifsm: 120A
Semiconductor structure: single diode
Case: Ø55x23mm
Power dissipation: 2.5kW
Features of semiconductor devices: high voltage
Fastening thread: M8
Type of diode: rectifying
Mounting: screw type
Max. forward voltage: 6.25V
Load current: 2/3.2/4.2A
Max. load current: 7A
Max. forward impulse current: 120A
Max. off-state voltage: 8kV
Kind of package: bulk
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+5135.15 грн
В кошику  од. на суму  грн.
VMO650-01F IXYS VMO650-01F.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXDD614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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LCB110S LCB110S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
3+200.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCB110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MCMA65PD1200TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8110BB5E66A0C4&compId=MCMA65PD1200TB.pdf?ci_sign=64ffce97cdb3b2a964512360d5b5ffa53cffe136 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA65PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8116D7636D20C4&compId=MCMA65PD1600TB.pdf?ci_sign=1a113da424381882bdb556bade45ffad1327a809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA265PD1600KB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 421A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP220N04T2 IXTP220N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
2+275.65 грн
10+196.16 грн
50+161.07 грн
Мінімальне замовлення: 2
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IXTA220N04T2 IXTA220N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA120N04T2 IXTA120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA220N04T2-7 IXTA220N04T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7E9820&compId=IXTA220N04T2-7.pdf?ci_sign=dfbe0e0fc65622b215cc5fc0881ade14b823b82d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH420N04T2 IXTH420N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP120N04T2 IXTP120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTT440N04T4HV IXTT440N04T4HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14DF820&compId=IXTT440N04T4HV.pdf?ci_sign=e183a6537a67fc5446061602a4901de288dda214 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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IXFH220N06T3 IXFH220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFA220N06T3 IXFA220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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MCD56-12io8B MCD56-12io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01AAE7DDC3E27&compId=MCD56-12IO8B-DTE.pdf?ci_sign=a491116a91803ed0b1e3265398a2b9e8dd527589 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
Max. load current: 100A
Kind of package: bulk
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+2194.89 грн
3+1801.29 грн
10+1614.70 грн
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MMIX1F40N110P MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+4424.13 грн
3+3629.69 грн
10+3259.70 грн
20+3258.11 грн
В кошику  од. на суму  грн.
IXTA230N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066
IXTA230N04T4
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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DSEP29-06A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82786FD2576143&compId=DSEP29-06A.pdf?ci_sign=82b5f05dc3fbb9ce8d39aa34aa78df78ee791b35
DSEP29-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+306.56 грн
10+172.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP29-06B Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920
DSEP29-06B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 25ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.52V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+257.62 грн
10+176.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH34N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499
IXFH34N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 0.18Ω
Drain current: 34A
Power dissipation: 695W
Drain-source voltage: 500V
Kind of channel: enhancement
Case: TO247-3
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+708.44 грн
10+542.22 грн
30+413.84 грн
В кошику  од. на суму  грн.
CPC1718J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49316DB8320C7&compId=CPC1718.pdf?ci_sign=bfe670bb7367963f0d1f7cc03edd903cea5b35fc
CPC1718J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
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IXFA14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFA14N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFH14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFH14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXTA14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTA14N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTP14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTP14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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CPC1333G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20
CPC1333G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1333GRTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXTP96P085T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09915A690F8BF&compId=IXT_96P085T.pdf?ci_sign=2aa751399db2183305198d4805b69b6937f7379e
IXTP96P085T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+400.16 грн
10+252.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEI60-06A description pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FB5F1A6F5005056AB5A8F&compId=DSEI60-06A.pdf?ci_sign=42521ecd82a6487195d59776bc2a7ad81b015792
DSEI60-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.55kA
Case: TO247-2
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 393 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+462.85 грн
5+355.63 грн
10+346.06 грн
В кошику  од. на суму  грн.
DSEI60-10A description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA3054AF872E469&compId=DSEI60-10A.pdf?ci_sign=8762e46d76ad8c4b0191b7d9243f59d3beaf30e4
DSEI60-10A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+452.55 грн
5+362.81 грн
В кошику  од. на суму  грн.
IXYX40N250CHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB02E3997DFB820&compId=IXYX40N250CHV.pdf?ci_sign=2d191498aa703376848cc72ab126f0b3d316eb60
IXYX40N250CHV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
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IXYX100N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADD33AF7E1F820&compId=IXYX100N120B3.pdf?ci_sign=a971886d073e07e1aad4c66229bcf59f49c76f6c
IXYX100N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
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IXYX40N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0
IXYX40N450HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 40A
Power dissipation: 660W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 786ns
Turn-off time: 1128ns
Features of semiconductor devices: high voltage
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IXYX100N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADC5715FFE3820&compId=IXYK(x)100N120C3.pdf?ci_sign=b18916030673c42465debafc009f682214d8ef11
IXYX100N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
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IXYX200N65B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA737D77A5B820&compId=IXYK(x)200N65B3.pdf?ci_sign=25c65d7ed38fb9d55168d232a11941b535e1f252
IXYX200N65B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.56kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 170ns
Turn-off time: 700ns
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IXYX25N250CV1HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8F60D6FA03820&compId=IXYX25N250CV1.pdf?ci_sign=86c780b170d5459c6b833261247dd0b63baeb821
IXYX25N250CV1HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 25A; 937W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 937W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 235A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 575ns
Features of semiconductor devices: high voltage
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IXYX30N170CV1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB407A41D3B8BF&compId=IXY_30N170CV1.pdf?ci_sign=e9235ed1111ff6a0b95423dcfa0ecfe975d873a2
IXYX30N170CV1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 30A; 937W; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 30A
Power dissipation: 937W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 49ns
Turn-off time: 327ns
Features of semiconductor devices: high voltage
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IXYX140N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB36CF0F167820&compId=IXYK(X)140N90C3.pdf?ci_sign=ff461166cb57c441f4d71986b43376cd7e351146
IXYX140N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
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IXYX25N250CV1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8F60D6FA03820&compId=IXYX25N250CV1.pdf?ci_sign=86c780b170d5459c6b833261247dd0b63baeb821
IXYX25N250CV1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 25A; 937W; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 937W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 235A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 575ns
Features of semiconductor devices: high voltage
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DMA90U1800LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 350A
Electrical mounting: SMT
Max. forward voltage: 1.26V
Case: SMPD
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CLA30E1200NPZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B90F0FAA20C4&compId=CLA30E1200NPZ.pdf?ci_sign=74c61ec5f4c10fe423b76f023345972834cee38e
CLA30E1200NPZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 30/50mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 255A
Features of semiconductor devices: two gate polarities
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MEK150-04DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.4kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.4V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
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MCD250-08io1 MCC,MCD_250.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 9kA
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MCD250-12io1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 287A x2
Max. load current: 450A
Case: W102
Max. forward voltage: 1.36V
Threshold on-voltage: 0.85V
Max. forward impulse current: 9kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Kind of package: bulk
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MCD250-14io1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9kA
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MCD250-16io1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9kA
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MCD250-18IO1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9kA
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IXTH02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775
IXTH02N450HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Mounting: THT
Reverse recovery time: 1.6µs
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
On-state resistance: 625Ω
Drain current: 0.2A
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFH80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c
IXFH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+905.95 грн
3+786.22 грн
5+725.62 грн
В кошику  од. на суму  грн.
IXFH80N65X2-4 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5825B99978BF&compId=IXFH80N65X2-4.pdf?ci_sign=e1124f754bcfef97bf067a342d7350d292757c2c
IXFH80N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1007.28 грн
5+839.65 грн
10+752.73 грн
В кошику  од. на суму  грн.
IXFK80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c
IXFK80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1661.62 грн
В кошику  од. на суму  грн.
IXTH80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB1FA4137F58BF&compId=IXTH80N65X2.pdf?ci_sign=d8bfcad20b59804a9aa6f35033565e0055cc9678
IXTH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
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IXFT80N65X2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5DDDF247B8BF&compId=IXFT80N65X2HV.pdf?ci_sign=8483671aa3976023c370bf7e90b7e5ebca15d53c
IXFT80N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXXH80N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341
IXXH80N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
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IXXH80N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef
IXXH80N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 123ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
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IXTT8P50 pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E9CDAEE7EB8BF&compId=IXT_8P50.pdf?ci_sign=d6b8da636dc8394c03e72a7f3dcbe95461b9557a
IXTT8P50
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO268; 400ns
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO268
Kind of package: tube
Drain-source voltage: -500V
Drain current: -8A
Reverse recovery time: 400ns
Gate charge: 130nC
On-state resistance: 1.2Ω
Gate-source voltage: ±20V
Power dissipation: 180W
Polarisation: unipolar
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+600.25 грн
3+491.99 грн
10+441.75 грн
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IXFN210N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8DD4ECD3A9820&compId=IXFN210N20P.pdf?ci_sign=90a440251c814329b6b181c212ef3f018c2848cf
IXFN210N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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UGE1112AY4 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3B6C180C340C4&compId=UGE1112AY4.pdf?ci_sign=cae9bbd30d6c6d860a4759f7d894d24f362940b8
UGE1112AY4
Виробник: IXYS
Category: Diodes - others
Description: Diode: rectifying; 8kV; 2/3.2/4.2A; 7A; 2.5kW; Ø55x23mm; Ifsm: 120A
Semiconductor structure: single diode
Case: Ø55x23mm
Power dissipation: 2.5kW
Features of semiconductor devices: high voltage
Fastening thread: M8
Type of diode: rectifying
Mounting: screw type
Max. forward voltage: 6.25V
Load current: 2/3.2/4.2A
Max. load current: 7A
Max. forward impulse current: 120A
Max. off-state voltage: 8kV
Kind of package: bulk
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5135.15 грн
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VMO650-01F VMO650-01F.pdf
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXDD614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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LCB110S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+200.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCB110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MCMA65PD1200TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8110BB5E66A0C4&compId=MCMA65PD1200TB.pdf?ci_sign=64ffce97cdb3b2a964512360d5b5ffa53cffe136 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA65PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8116D7636D20C4&compId=MCMA65PD1600TB.pdf?ci_sign=1a113da424381882bdb556bade45ffad1327a809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA265PD1600KB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 421A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP220N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5
IXTP220N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+275.65 грн
10+196.16 грн
50+161.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA220N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5
IXTA220N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTA120N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA220N04T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7E9820&compId=IXTA220N04T2-7.pdf?ci_sign=dfbe0e0fc65622b215cc5fc0881ade14b823b82d
IXTA220N04T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH420N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765
IXTH420N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTP120N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTT440N04T4HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14DF820&compId=IXTT440N04T4HV.pdf?ci_sign=e183a6537a67fc5446061602a4901de288dda214
IXTT440N04T4HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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IXFH220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFH220N06T3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFA220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFA220N06T3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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MCD56-12io8B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01AAE7DDC3E27&compId=MCD56-12IO8B-DTE.pdf?ci_sign=a491116a91803ed0b1e3265398a2b9e8dd527589 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD56-12io8B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
Max. load current: 100A
Kind of package: bulk
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2194.89 грн
3+1801.29 грн
10+1614.70 грн
В кошику  од. на суму  грн.
MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
MMIX1F40N110P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4424.13 грн
3+3629.69 грн
10+3259.70 грн
20+3258.11 грн
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