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IXFK120N30P3 IXFK120N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFK120N25P IXFK120N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXYR100N120C3 IXYR100N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD62412DB8F820&compId=IXYR100N120C3.pdf?ci_sign=de30631e4fffbf2b67eb31519229856a9b8f4584 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Mounting: THT
Turn-on time: 143ns
Gate charge: 260nC
Turn-off time: 271ns
Case: PLUS247™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 56A
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 450A
Power dissipation: 484W
Kind of package: tube
Collector-emitter voltage: 1.2kV
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MCMA140PD1200TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B4CE2C84A0C4&compId=MCMA140PD1200TB.pdf?ci_sign=012f7d812458ee72f1d124319d295e2f227a1db6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
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MCMA1400E1600CD IXYS Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 600/800mA
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MCMA140P1800TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MDMA1400C1600CC IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83B65ED57A80C4&compId=MDMA1400C1600CC.pdf?ci_sign=3538e579689c92360b3215fffe2eb97c10f13c06 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 700A x2
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
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MCMA140P1200TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MCMA140P1400TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MCMA140P1600TA-NI IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDF91B43CE06B7F40D6&compId=MCMA140P1600TA-NI.pdf?ci_sign=70902de132a96e720046b3fc07ec5015139e7f48 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
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MDMA140P1200TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB833CF4489620C4&compId=MDMA140P1200TG.pdf?ci_sign=c9764fbcb017bbcc0b9a34085463d33e10f3bff4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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MDMA140P1600TG IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C88667E205598BF&compId=MDMA140P1600TG.pdf?ci_sign=3579c69530a8903c3dd7c83b6ffeba86cd59c752 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 140A
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MDMA140P1800TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83404331BA00C4&compId=MDMA140P1800TG.pdf?ci_sign=67d7f1ef6eef7ae6c8809f4eb55eeafca3d9171d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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IXTA24N65X2 IXTA24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
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IXTH24N65X2 IXTH24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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IXTY18P10T IXTY18P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
2+279.94 грн
10+158.68 грн
Мінімальне замовлення: 2
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IXTA18P10T IXTA18P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
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IXFK420N10T IXFK420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1210.80 грн
5+957.66 грн
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CPC1301GRTR CPC1301GRTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9184E963945960C4&compId=CPC1301G.pdf?ci_sign=702b0def7552ac79a26102b9cdca77dc60c0820e Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 60µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
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IXFH18N100Q3 IXFH18N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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IXFT18N100Q3 IXFT18N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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CPC1014NTR CPC1014NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1020NTR CPC1020NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75960C7&compId=CPC1020N.pdf?ci_sign=96f62284072c1fad21550f35e7a4e26a55ed445d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
On-state resistance: 0.25Ω
Relay variant: current source
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CPC1025NTR CPC1025NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75AA0C7&compId=CPC1025N.pdf?ci_sign=262d69aeff98f8d3fd7ed3ae0d6bdac22dcb08db Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
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CPC1019NTR CPC1019NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3 Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 750mA
On-state resistance: 0.6Ω
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CPC1006NTR CPC1006NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Relay variant: 1-phase; current source
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CPC1010N CPC1010N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
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CPC1004NTR CPC1004NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56 Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Switched voltage: max. 100V DC
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 4Ω
Relay variant: current source
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CPC1010NTR CPC1010NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
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CPC1016NTR CPC1016NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 16Ω
Relay variant: 1-phase; current source
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IXA12IF1200HB IXA12IF1200HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DC4F060958BF&compId=IXA12IF1200HB.pdf?ci_sign=299bea4b8317f292597b6ce020d3fb5193cac378 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
2+345.21 грн
10+263.93 грн
30+226.46 грн
120+199.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXA37IF1200HJ IXA37IF1200HJ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55 Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
1+1708.00 грн
3+1420.94 грн
10+1255.88 грн
30+1126.70 грн
В кошику  од. на суму  грн.
IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+458.56 грн
В кошику  од. на суму  грн.
DHG10I1200PA DHG10I1200PA IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3EDC532694143&compId=DHG10I1200PA.pdf?ci_sign=ff3d10ce111358f641abd5b1e2ef9390ef4a4d84 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Power dissipation: 85W
Case: TO220AC
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.23V
Load current: 10A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: Sonic FRD™
Type of diode: rectifying
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
3+160.58 грн
5+114.82 грн
10+97.28 грн
25+90.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFB300N10P IXFB300N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 279nC
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Drain current: 300A
Gate-source voltage: ±20V
Power dissipation: 1.5kW
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: PLUS264™
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2212.07 грн
В кошику  од. на суму  грн.
VMM300-03F IXYS VMM300-03F.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Polarisation: unipolar
Technology: HiPerFET™
Drain-source voltage: 300V
Gate-source voltage: ±20V
Type of semiconductor module: MOSFET transistor
Drain current: 220A
Pulsed drain current: 1.16kA
On-state resistance: 7.4mΩ
Power dissipation: 1.5kW
Electrical mounting: FASTON connectors; screw
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IXFN300N10P IXFN300N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF6281B2EE41820&compId=IXFN300N10P.pdf?ci_sign=698fb9a6d5df3e5793ba0cfa72c193b24b0e5395 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 295A
Pulsed drain current: 900A
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Power dissipation: 1.07kW
Electrical mounting: screw
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IXFN300N20X3 IXFN300N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A8B7B874BD8BF&compId=IXFN300N20X3.pdf?ci_sign=21884cf5f5cecb1983c221f0ce87390a4ae6f23e pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 300A
Pulsed drain current: 700A
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
On-state resistance: 3.5mΩ
Power dissipation: 695W
Electrical mounting: screw
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CLA60PD1200NA CLA60PD1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89188AC1A1F8BF&compId=CLA60PD1200NA.pdf?ci_sign=8a1d155a6a91fc089fa0a68417874f3c7352585e Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Kind of package: bulk
Case: SOT227B
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+1859.99 грн
В кошику  од. на суму  грн.
CLA110MB1200NA CLA110MB1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF14CC06F2398BF&compId=CLA110MB1200NA.pdf?ci_sign=8ff423e678d1d339a3ca9cfba184e03ee39f4269 Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Kind of package: bulk
Semiconductor structure: opposing
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 40/80mA
Max. forward voltage: 1.04V
Load current: 50A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
1+1585.20 грн
5+1347.58 грн
В кошику  од. на суму  грн.
IXGN200N60B3 IXGN200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
1+3709.67 грн
3+3152.86 грн
В кошику  од. на суму  грн.
DSEP2X91-03A DSEP2X91-03A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5B97D60E15FAA50&compId=DSEP2X91-03A-DTE.pdf?ci_sign=2598ba83b247f01b3d7354586c51ea5939025420 description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 90A
Mechanical mounting: screw
Technology: HiPerFRED™
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
1+2494.58 грн
В кошику  од. на суму  грн.
DSEP2X61-03A DSEP2X61-03A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C889CC97A9AD8BF&compId=DSEP2x61-03A.pdf?ci_sign=fefb71e7c146efb6bbde3c29fbc2ca054f68b484 description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Technology: HiPerFRED™
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
1+2036.03 грн
3+1884.22 грн
В кошику  од. на суму  грн.
DPF240X200NA DPF240X200NA IXYS DPF240X200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
1+3052.75 грн
3+2526.11 грн
9+2490.23 грн
В кошику  од. на суму  грн.
DSS2X121-0045B DSS2X121-0045B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF3EBF7307B8BF&compId=DSS2x121-0045B.pdf?ci_sign=ac4f5fa5561f8409b6a19db0a7e44ae5c19d1449 description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+2546.97 грн
3+2090.74 грн
10+1880.23 грн
В кошику  од. на суму  грн.
MCO150-16IO1 MCO150-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25B90517B35EA&compId=MCO150-16IO1.pdf?ci_sign=46874172e95e49a2ec6ad9fcf27e90ddeba41775 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2803.72 грн
В кошику  од. на суму  грн.
IXDD630MYI IXDD630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
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IXDD630MCI IXDD630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
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В кошику  од. на суму  грн.
IXTQ470P2 IXTQ470P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
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CS45-12IO1 CS45-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
1+447.39 грн
5+326.13 грн
10+287.86 грн
30+264.73 грн
В кошику  од. на суму  грн.
IXTX102N65X2 IXTX102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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В кошику  од. на суму  грн.
IXTP48P05T IXTP48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
2+286.81 грн
10+204.93 грн
50+173.83 грн
100+168.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP44N10T IXTP44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
4+142.55 грн
10+102.86 грн
50+78.14 грн
100+70.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTY44N10T IXTY44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 288 шт:
термін постачання 21-30 дні (днів)
3+170.89 грн
10+137.95 грн
25+111.63 грн
70+96.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY48P05T IXTY48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
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В кошику  од. на суму  грн.
IXTA48P05T IXTA48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
товару немає в наявності
В кошику  од. на суму  грн.
IXTK120P20T IXTK120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
товару немає в наявності
В кошику  од. на суму  грн.
IXTK102N65X2 IXTK102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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В кошику  од. на суму  грн.
IXTN120P20T IXTN120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A7765FE1E748&compId=IXTN120P20T.pdf?ci_sign=424025f9bccd2160baf20cb9a4a14aba3d44a2f2 Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
товару немає в наявності
В кошику  од. на суму  грн.
IXTN102N65X2 IXTN102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
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В кошику  од. на суму  грн.
IXFK120N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b
IXFK120N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXFK120N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4
IXFK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXYR100N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD62412DB8F820&compId=IXYR100N120C3.pdf?ci_sign=de30631e4fffbf2b67eb31519229856a9b8f4584
IXYR100N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Mounting: THT
Turn-on time: 143ns
Gate charge: 260nC
Turn-off time: 271ns
Case: PLUS247™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 56A
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 450A
Power dissipation: 484W
Kind of package: tube
Collector-emitter voltage: 1.2kV
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MCMA140PD1200TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B4CE2C84A0C4&compId=MCMA140PD1200TB.pdf?ci_sign=012f7d812458ee72f1d124319d295e2f227a1db6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
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MCMA1400E1600CD
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 600/800mA
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MCMA140P1800TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MDMA1400C1600CC pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83B65ED57A80C4&compId=MDMA1400C1600CC.pdf?ci_sign=3538e579689c92360b3215fffe2eb97c10f13c06
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 700A x2
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
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MCMA140P1200TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MCMA140P1400TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MCMA140P1600TA-NI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF91B43CE06B7F40D6&compId=MCMA140P1600TA-NI.pdf?ci_sign=70902de132a96e720046b3fc07ec5015139e7f48 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
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MDMA140P1200TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB833CF4489620C4&compId=MDMA140P1200TG.pdf?ci_sign=c9764fbcb017bbcc0b9a34085463d33e10f3bff4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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MDMA140P1600TG pVersion=0046&contRep=ZT&docId=005056AB82531EE98C88667E205598BF&compId=MDMA140P1600TG.pdf?ci_sign=3579c69530a8903c3dd7c83b6ffeba86cd59c752 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 140A
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MDMA140P1800TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83404331BA00C4&compId=MDMA140P1800TG.pdf?ci_sign=67d7f1ef6eef7ae6c8809f4eb55eeafca3d9171d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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IXTA24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTA24N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
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IXTH24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTH24N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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IXTY18P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b
IXTY18P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+279.94 грн
10+158.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA18P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b
IXTA18P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
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IXFK420N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c
IXFK420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1210.80 грн
5+957.66 грн
В кошику  од. на суму  грн.
CPC1301GRTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9184E963945960C4&compId=CPC1301G.pdf?ci_sign=702b0def7552ac79a26102b9cdca77dc60c0820e
CPC1301GRTR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 60µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
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IXFH18N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8
IXFH18N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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IXFT18N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8
IXFT18N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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CPC1014NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f
CPC1014NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1020NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75960C7&compId=CPC1020N.pdf?ci_sign=96f62284072c1fad21550f35e7a4e26a55ed445d
CPC1020NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
On-state resistance: 0.25Ω
Relay variant: current source
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CPC1025NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75AA0C7&compId=CPC1025N.pdf?ci_sign=262d69aeff98f8d3fd7ed3ae0d6bdac22dcb08db
CPC1025NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
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CPC1019NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75800C7&compId=CPC1019N.pdf?ci_sign=1456f68612229fb12531626e0e32c9f25964cac3
CPC1019NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 750mA
On-state resistance: 0.6Ω
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CPC1006NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42A60C7&compId=CPC1006N.pdf?ci_sign=72d41b7324042777116a851719d9e0f28d3ef419
CPC1006NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
On-state resistance: 10Ω
Relay variant: 1-phase; current source
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CPC1010N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4
CPC1010N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
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CPC1004NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49224F42900C7&compId=CPC1004N.pdf?ci_sign=c2ff74f63a010424db623c4e5b6a3f4c09119d56
CPC1004NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Switched voltage: max. 100V DC
Operating temperature: -40...110°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 4Ω
Relay variant: current source
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CPC1010NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75180C7&compId=CPC1010N.pdf?ci_sign=41135da2a176468c7114dc43db7a3f64404be7d4
CPC1010NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.17A
On-state resistance: 11.5Ω
Relay variant: 1-phase; current source
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CPC1016NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a
CPC1016NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.1A
On-state resistance: 16Ω
Relay variant: 1-phase; current source
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IXA12IF1200HB pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1DC4F060958BF&compId=IXA12IF1200HB.pdf?ci_sign=299bea4b8317f292597b6ce020d3fb5193cac378
IXA12IF1200HB
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 13A
Power dissipation: 85W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+345.21 грн
10+263.93 грн
30+226.46 грн
120+199.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXA37IF1200HJ pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F187B680865820&compId=IXA37IF1200HJ.pdf?ci_sign=d85df4621c1de3de20b1ce19f7cad76b3d699e55
IXA37IF1200HJ
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 37A; 195W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 195W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-off time: 350ns
Technology: Planar; Sonic FRD™; XPT™
Turn-on time: 110ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1708.00 грн
3+1420.94 грн
10+1255.88 грн
30+1126.70 грн
В кошику  од. на суму  грн.
IXA30RG1200DHGLB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3
IXA30RG1200DHGLB
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+458.56 грн
В кошику  од. на суму  грн.
DHG10I1200PA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3EDC532694143&compId=DHG10I1200PA.pdf?ci_sign=ff3d10ce111358f641abd5b1e2ef9390ef4a4d84
DHG10I1200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Power dissipation: 85W
Case: TO220AC
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.23V
Load current: 10A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: Sonic FRD™
Type of diode: rectifying
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+160.58 грн
5+114.82 грн
10+97.28 грн
25+90.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFB300N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99
IXFB300N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 279nC
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Drain current: 300A
Gate-source voltage: ±20V
Power dissipation: 1.5kW
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: PLUS264™
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2212.07 грн
В кошику  од. на суму  грн.
VMM300-03F VMM300-03F.pdf
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Idm: 1.16kA
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Polarisation: unipolar
Technology: HiPerFET™
Drain-source voltage: 300V
Gate-source voltage: ±20V
Type of semiconductor module: MOSFET transistor
Drain current: 220A
Pulsed drain current: 1.16kA
On-state resistance: 7.4mΩ
Power dissipation: 1.5kW
Electrical mounting: FASTON connectors; screw
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IXFN300N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF6281B2EE41820&compId=IXFN300N10P.pdf?ci_sign=698fb9a6d5df3e5793ba0cfa72c193b24b0e5395
IXFN300N10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 295A
Pulsed drain current: 900A
Gate charge: 279nC
Kind of channel: enhancement
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Power dissipation: 1.07kW
Electrical mounting: screw
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IXFN300N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE9909A8B7B874BD8BF&compId=IXFN300N20X3.pdf?ci_sign=21884cf5f5cecb1983c221f0ce87390a4ae6f23e pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFN300N20X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Gate-source voltage: ±30V
Type of semiconductor module: MOSFET transistor
Drain current: 300A
Pulsed drain current: 700A
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 172ns
On-state resistance: 3.5mΩ
Power dissipation: 695W
Electrical mounting: screw
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CLA60PD1200NA pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89188AC1A1F8BF&compId=CLA60PD1200NA.pdf?ci_sign=8a1d155a6a91fc089fa0a68417874f3c7352585e
CLA60PD1200NA
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Kind of package: bulk
Case: SOT227B
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1859.99 грн
В кошику  од. на суму  грн.
CLA110MB1200NA pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF14CC06F2398BF&compId=CLA110MB1200NA.pdf?ci_sign=8ff423e678d1d339a3ca9cfba184e03ee39f4269
CLA110MB1200NA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Kind of package: bulk
Semiconductor structure: opposing
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 40/80mA
Max. forward voltage: 1.04V
Load current: 50A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1585.20 грн
5+1347.58 грн
В кошику  од. на суму  грн.
IXGN200N60B3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241
IXGN200N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3709.67 грн
3+3152.86 грн
В кошику  од. на суму  грн.
DSEP2X91-03A description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5B97D60E15FAA50&compId=DSEP2X91-03A-DTE.pdf?ci_sign=2598ba83b247f01b3d7354586c51ea5939025420
DSEP2X91-03A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Max. load current: 90A
Mechanical mounting: screw
Technology: HiPerFRED™
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2494.58 грн
В кошику  од. на суму  грн.
DSEP2X61-03A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C889CC97A9AD8BF&compId=DSEP2x61-03A.pdf?ci_sign=fefb71e7c146efb6bbde3c29fbc2ca054f68b484
DSEP2X61-03A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Technology: HiPerFRED™
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2036.03 грн
3+1884.22 грн
В кошику  од. на суму  грн.
DPF240X200NA DPF240X200NA.pdf
DPF240X200NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3052.75 грн
3+2526.11 грн
9+2490.23 грн
В кошику  од. на суму  грн.
DSS2X121-0045B description pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF3EBF7307B8BF&compId=DSS2x121-0045B.pdf?ci_sign=ac4f5fa5561f8409b6a19db0a7e44ae5c19d1449
DSS2X121-0045B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2546.97 грн
3+2090.74 грн
10+1880.23 грн
В кошику  од. на суму  грн.
MCO150-16IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25B90517B35EA&compId=MCO150-16IO1.pdf?ci_sign=46874172e95e49a2ec6ad9fcf27e90ddeba41775
MCO150-16IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2803.72 грн
В кошику  од. на суму  грн.
IXDD630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630MYI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
товару немає в наявності
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IXDD630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630MCI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ470P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b
IXTQ470P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
CS45-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0
CS45-12IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+447.39 грн
5+326.13 грн
10+287.86 грн
30+264.73 грн
В кошику  од. на суму  грн.
IXTX102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTX102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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IXTP48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTP48P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+286.81 грн
10+204.93 грн
50+173.83 грн
100+168.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTP44N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+142.55 грн
10+102.86 грн
50+78.14 грн
100+70.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTY44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTY44N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 288 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+170.89 грн
10+137.95 грн
25+111.63 грн
70+96.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTY48P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
товару немає в наявності
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IXTA48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTA48P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
товару немає в наявності
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IXTK120P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25
IXTK120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
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IXTK102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTK102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
товару немає в наявності
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IXTN120P20T pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A7765FE1E748&compId=IXTN120P20T.pdf?ci_sign=424025f9bccd2160baf20cb9a4a14aba3d44a2f2
IXTN120P20T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
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IXTN102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de
IXTN102N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
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