Продукція > IXYS > Всі товари виробника IXYS (16261) > Сторінка 271 з 272

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IXKT70N60C5 IXKT70N60C5 IXYS IXKT70N60C5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
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IXKT70N60C5-TRL IXYS littelfuse-discrete-mosfets-ixkt70n60c5-datasheet?assetguid=0cbe6119-c0f8-4cba-b157-263eab433eda Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 66A; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 66A
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
товару немає в наявності
 Мінімальне замовлення: 400 шт
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IXKT70N60C5-TUB IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 68A; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 68A
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
товару немає в наявності
 Мінімальне замовлення: 300 шт
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DSI2X55-12A DSI2X55-12A IXYS DSI2x55-12A.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.22V
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
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IXTQ130N10T IXYS DS99708AIXTHIXTQ130N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFA130N10T IXFA130N10T IXYS 171448766littelfusediscretemosfetsnchanneltrenchgate.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263AB; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
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 Мінімальне замовлення: 300 шт
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IXFA130N10T2-TRL IXFA130N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-130n10t2-datasheet?assetguid=53ea8d95-36ce-45ea-8f7b-5cb34f339de3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXFP130N10T IXFP130N10T IXYS 171448766littelfusediscretemosfetsnchanneltrenchgate.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO220-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTH130N10T IXYS DS99708AIXTHIXTQ130N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO247-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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MCC44-16io1B MCC44-16io1B IXYS MCC44-16IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 49A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+2222.73 грн
2+1951.89 грн
10+1917.93 грн
В кошику  од. на суму  грн.
CPC3714CTR CPC3714CTR IXYS CPC3714.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Polarisation: unipolar
Drain current: 0.24A
Kind of channel: depletion
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 14Ω
Mounting: SMD
Power dissipation: 1.4W
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IXFR180N15P IXFR180N15P IXYS IXFR180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
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DPF30I300PA DPF30I300PA IXYS DPF30I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 390A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 390A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.17V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 55ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
2+309.04 грн
3+268.29 грн
5+199.52 грн
14+188.48 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; Ifsm: 400A; TO247-3; tube; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.4kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 0.97V
Reverse recovery time: 55ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+593.40 грн
3+424.51 грн
7+401.58 грн
В кошику  од. на суму  грн.
DPG30I300PA DPG30I300PA IXYS media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 360A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 360A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
2+267.90 грн
6+161.31 грн
17+152.82 грн
50+148.58 грн
100+146.88 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP2X31-03A DSEP2X31-03A IXYS media?resourcetype=datasheets&itemid=e421385f-2d09-4cb8-a0b8-5c30299b69b5&filename=Littelfuse-Power-Semiconductors-DSEP2x31-03A-Datasheet description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Kind of package: tube
Max. forward voltage: 0.9V
Max. load current: 60A
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1980.43 грн
В кошику  од. на суму  грн.
DSEI2x161-02P DSEI2x161-02P IXYS mc560.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 165A x2
Case: ECO-PAC 2
Max. forward voltage: 1.2V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. load current: 330A
Mechanical mounting: screw
Kind of package: bulk
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IXSH40N65L2KHV IXYS ixsh40n65l2khv-datasheet?assetguid=7646e61d-a08c-492f-af10-af5c9f4809a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 40A; 174W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 174W
Case: TO247-4
Mounting: THT
On-state resistance: 60Ω
Gate charge: 64nC
Polarisation: N
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
товару немає в наявності
 Мінімальне замовлення: 450 шт
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IXXH40N65B4D1 IXXH40N65B4D1 IXYS IXXH40N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Kind of package: tube
Turn-off time: 252ns
Gate charge: 66nC
Turn-on time: 67ns
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IXXH40N65B4H1 IXXH40N65B4H1 IXYS IXXH40N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Kind of package: tube
Turn-off time: 207ns
Gate charge: 66nC
Turn-on time: 61ns
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IXXH40N65C4D1 IXXH40N65C4D1 IXYS IXXH40N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Kind of package: tube
Turn-off time: 142ns
Gate charge: 68nC
Turn-on time: 71ns
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IXYH40N65B3D1 IXYH40N65B3D1 IXYS IXYH(Q)40N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Kind of package: tube
Turn-off time: 350ns
Gate charge: 68nC
Turn-on time: 57ns
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IXYH40N65C3 IXYH40N65C3 IXYS IXYH40N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 160ns
Gate charge: 66nC
Turn-on time: 64ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYH40N65C3D1 IXYH40N65C3D1 IXYS IXYH(Q)40N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 160ns
Gate charge: 66nC
Turn-on time: 64ns
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IXXH140N65B4 IXXH140N65B4 IXYS IXXH140N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Kind of package: tube
Turn-off time: 340ns
Gate charge: 250nC
Turn-on time: 128ns
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IXXH140N65C4 IXXH140N65C4 IXYS IXXH140N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Kind of package: tube
Turn-off time: 273ns
Gate charge: 250nC
Turn-on time: 114ns
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 Мінімальне замовлення: 30 шт
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PLA140 PLA140 IXYS PLA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Case: DIP6
Mounting: THT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
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PLA140S PLA140S IXYS PLA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Case: DIP6
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
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PLA140STR IXYS PLA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Case: DIP6
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXTP450P2 IXTP450P2 IXYS IXTH(P,Q)450P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 141 шт:
термін постачання 14-30 дні (днів)
2+374.87 грн
6+186.78 грн
15+176.60 грн
100+170.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFQ28N60P3 IXFQ28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
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IXFH50N85X IXFH50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTP08N100P IXTP08N100P IXYS IXTA(P,Y)08N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
On-state resistance: 20Ω
Reverse recovery time: 750ns
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 243 шт:
термін постачання 14-30 дні (днів)
3+165.56 грн
9+110.37 грн
24+104.43 грн
Мінімальне замовлення: 3 шт
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IXFL38N100P IXFL38N100P IXYS IXFL38N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: ISOPLUS i5-pac™
On-state resistance: 0.23Ω
Power dissipation: 520W
Gate charge: 0.35µC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
1+982.90 грн
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IXTA1N100P-TRL IXTA1N100P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1A; 50W; D2PAK,TO263; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Gate charge: 15.5nC
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTY1N100P-TRL IXTY1N100P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1A; 50W; DPAK,TO252AA; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Gate charge: 15.5nC
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IXTY2N100P-TRL IXTY2N100P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2A; 86W; DPAK,TO252AA; 800ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
On-state resistance: 7.5Ω
Reverse recovery time: 800ns
Power dissipation: 86W
Gate charge: 24.3nC
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IXTA1R4N100PTRL IXTA1R4N100PTRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.4A; 63W; D2PAK,TO263; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 11.8Ω
Reverse recovery time: 750ns
Power dissipation: 63W
Gate charge: 17.8nC
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTY2N100P IXTY2N100P IXYS IXTA(P,Y)2N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO252
Reverse recovery time: 800ns
Power dissipation: 86W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXFR32N100P IXFR32N100P IXYS IXFR32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Power dissipation: 320W
Gate charge: 225nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTP1N100P IXTP1N100P IXYS IXTA(P,Y)1N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTY1N100P IXTY1N100P IXYS IXTA(P,Y)1N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO252
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXFA4N100P-TRL IXFA4N100P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 4A; 150W; D2PAK,TO263; 300ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 3.3Ω
Reverse recovery time: 300ns
Power dissipation: 150W
Gate charge: 26nC
Technology: HiPerFET™
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXFK32N100P IXFK32N100P IXYS IXFK(X)32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.32Ω
Power dissipation: 960W
Gate charge: 225nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXFX32N100P IXFX32N100P IXYS IXFK(X)32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: PLUS247™
On-state resistance: 0.32Ω
Power dissipation: 960W
Gate charge: 225nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTA08N100P IXTA08N100P IXYS IXTA(P,Y)08N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO263
On-state resistance: 20Ω
Reverse recovery time: 750ns
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTA1N100P IXTA1N100P IXYS IXTA(P,Y)1N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO263
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXYH10N170C IXYH10N170C IXYS IXYH10N170C.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 10A; 280W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Power dissipation: 280W
Case: TO247-3
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 260ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXYH10N170CV1 IXYH10N170CV1 IXYS IXYH10N170Cv1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 10A; 280W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Power dissipation: 280W
Case: TO247-3
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 260ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXDF602SIA IXDF602SIA IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
5+105.15 грн
10+85.75 грн
18+56.04 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IXDF602PI IXDF602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDF602CSIA IXYS Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXDF602CSIATR IXYS Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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IXDF602D2TR IXDF602D2TR IXYS media?resourcetype=datasheets&itemid=75D5DB43-B768-4A16-B76F-C3313DC04096&filename=IXD-602 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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IXDF602SI IXDF602SI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDF602SIATR IXDF602SIATR IXYS media?resourcetype=datasheets&itemid=75D5DB43-B768-4A16-B76F-C3313DC04096&filename=IXD-602 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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IXDF602SITR IXDF602SITR IXYS media?resourcetype=datasheets&itemid=75D5DB43-B768-4A16-B76F-C3313DC04096&filename=IXD-602 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DPG80C400HB DPG80C400HB IXYS media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; Ifsm: 400A; TO247-3; tube; 215W
Mounting: THT
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.43V
Power dissipation: 215W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.4kV
Load current: 40A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Reverse recovery time: 45ns
на замовлення 292 шт:
термін постачання 14-30 дні (днів)
1+850.32 грн
2+494.98 грн
6+467.81 грн
30+453.38 грн
В кошику  од. на суму  грн.
DSEE55-24N1F DSEE55-24N1F IXYS media?resourcetype=datasheets&itemid=bbc3c036-3bc3-4bdd-bdc6-79f0ab7a10f9&filename=Littelfuse-Power-Semiconductors-DSEE55-24N1F-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 800A; tube; Ufmax: 1.56V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.8kA
Case: ISOPLUS i4-pac™ x024b
Kind of package: tube
Max. forward voltage: 1.56V
Power dissipation: 250W
Reverse recovery time: 85ns
Technology: HiPerFRED™
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IXTA24N65X2 IXTA24N65X2 IXYS IXT_24N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXKT70N60C5 IXKT70N60C5.pdf
IXKT70N60C5
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
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IXKT70N60C5-TRL littelfuse-discrete-mosfets-ixkt70n60c5-datasheet?assetguid=0cbe6119-c0f8-4cba-b157-263eab433eda
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 66A; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 66A
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
товару немає в наявності
Мінімальне замовлення: 400 шт
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IXKT70N60C5-TUB
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 68A; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 68A
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
товару немає в наявності
Мінімальне замовлення: 300 шт
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DSI2X55-12A description DSI2x55-12A.pdf
DSI2X55-12A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.22V
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
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IXTQ130N10T DS99708AIXTHIXTQ130N10T.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFA130N10T 171448766littelfusediscretemosfetsnchanneltrenchgate.pdf
IXFA130N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263AB; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFA130N10T2-TRL littelfuse-discrete-mosfets-ixf-130n10t2-datasheet?assetguid=53ea8d95-36ce-45ea-8f7b-5cb34f339de3
IXFA130N10T2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFP130N10T 171448766littelfusediscretemosfetsnchanneltrenchgate.pdf
IXFP130N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO220-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTH130N10T DS99708AIXTHIXTQ130N10T.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO247-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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MCC44-16io1B MCC44-16IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC44-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 49A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2222.73 грн
2+1951.89 грн
10+1917.93 грн
В кошику  од. на суму  грн.
CPC3714CTR CPC3714.pdf
CPC3714CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Polarisation: unipolar
Drain current: 0.24A
Kind of channel: depletion
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 14Ω
Mounting: SMD
Power dissipation: 1.4W
товару немає в наявності
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IXFR180N15P IXFR180N15P.pdf
IXFR180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
товару немає в наявності
В кошику  од. на суму  грн.
DPF30I300PA DPF30I300PA.pdf
DPF30I300PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 390A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 390A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.17V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 55ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+309.04 грн
3+268.29 грн
5+199.52 грн
14+188.48 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; Ifsm: 400A; TO247-3; tube; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.4kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 0.97V
Reverse recovery time: 55ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+593.40 грн
3+424.51 грн
7+401.58 грн
В кошику  од. на суму  грн.
DPG30I300PA media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet
DPG30I300PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 360A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 360A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+267.90 грн
6+161.31 грн
17+152.82 грн
50+148.58 грн
100+146.88 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP2X31-03A description media?resourcetype=datasheets&itemid=e421385f-2d09-4cb8-a0b8-5c30299b69b5&filename=Littelfuse-Power-Semiconductors-DSEP2x31-03A-Datasheet
DSEP2X31-03A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Kind of package: tube
Max. forward voltage: 0.9V
Max. load current: 60A
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1980.43 грн
В кошику  од. на суму  грн.
DSEI2x161-02P mc560.pdf
DSEI2x161-02P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 165A x2
Case: ECO-PAC 2
Max. forward voltage: 1.2V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. load current: 330A
Mechanical mounting: screw
Kind of package: bulk
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В кошику  од. на суму  грн.
IXSH40N65L2KHV ixsh40n65l2khv-datasheet?assetguid=7646e61d-a08c-492f-af10-af5c9f4809a6
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 40A; 174W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 174W
Case: TO247-4
Mounting: THT
On-state resistance: 60Ω
Gate charge: 64nC
Polarisation: N
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
IXXH40N65B4D1 IXXH40N65B4D1.pdf
IXXH40N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Kind of package: tube
Turn-off time: 252ns
Gate charge: 66nC
Turn-on time: 67ns
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IXXH40N65B4H1 IXXH40N65B4H1.pdf
IXXH40N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Kind of package: tube
Turn-off time: 207ns
Gate charge: 66nC
Turn-on time: 61ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXH40N65C4D1 IXXH40N65C4D1.pdf
IXXH40N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Kind of package: tube
Turn-off time: 142ns
Gate charge: 68nC
Turn-on time: 71ns
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В кошику  од. на суму  грн.
IXYH40N65B3D1 IXYH(Q)40N65B3D1.pdf
IXYH40N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Kind of package: tube
Turn-off time: 350ns
Gate charge: 68nC
Turn-on time: 57ns
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В кошику  од. на суму  грн.
IXYH40N65C3 IXYH40N65C3.pdf
IXYH40N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 160ns
Gate charge: 66nC
Turn-on time: 64ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH40N65C3D1 IXYH(Q)40N65C3D1.pdf
IXYH40N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 160ns
Gate charge: 66nC
Turn-on time: 64ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXH140N65B4 IXXH140N65B4.pdf
IXXH140N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Kind of package: tube
Turn-off time: 340ns
Gate charge: 250nC
Turn-on time: 128ns
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IXXH140N65C4 IXXH140N65C4.pdf
IXXH140N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Kind of package: tube
Turn-off time: 273ns
Gate charge: 250nC
Turn-on time: 114ns
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
PLA140 PLA140.pdf
PLA140
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Case: DIP6
Mounting: THT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
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PLA140S PLA140.pdf
PLA140S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Case: DIP6
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
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PLA140STR PLA140.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Case: DIP6
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXTP450P2 IXTH(P,Q)450P2.pdf
IXTP450P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 141 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+374.87 грн
6+186.78 грн
15+176.60 грн
100+170.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFQ28N60P3 IXFH(Q)28N60P3.pdf
IXFQ28N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
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IXFH50N85X IXF_50N85X.pdf
IXFH50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP08N100P IXTA(P,Y)08N100P.pdf
IXTP08N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
On-state resistance: 20Ω
Reverse recovery time: 750ns
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 243 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+165.56 грн
9+110.37 грн
24+104.43 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXFL38N100P IXFL38N100P.pdf
IXFL38N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: ISOPLUS i5-pac™
On-state resistance: 0.23Ω
Power dissipation: 520W
Gate charge: 0.35µC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+982.90 грн
В кошику  од. на суму  грн.
IXTA1N100P-TRL
IXTA1N100P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1A; 50W; D2PAK,TO263; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Gate charge: 15.5nC
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTY1N100P-TRL
IXTY1N100P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1A; 50W; DPAK,TO252AA; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Gate charge: 15.5nC
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXTY2N100P-TRL
IXTY2N100P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 2A; 86W; DPAK,TO252AA; 800ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: DPAK; TO252AA
On-state resistance: 7.5Ω
Reverse recovery time: 800ns
Power dissipation: 86W
Gate charge: 24.3nC
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXTA1R4N100PTRL
IXTA1R4N100PTRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 1.4A; 63W; D2PAK,TO263; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 11.8Ω
Reverse recovery time: 750ns
Power dissipation: 63W
Gate charge: 17.8nC
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTY2N100P IXTA(P,Y)2N100P.pdf
IXTY2N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO252
Reverse recovery time: 800ns
Power dissipation: 86W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXFR32N100P IXFR32N100P.pdf
IXFR32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Power dissipation: 320W
Gate charge: 225nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
В кошику  од. на суму  грн.
IXTP1N100P IXTA(P,Y)1N100P.pdf
IXTP1N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO220AB; 750ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTY1N100P IXTA(P,Y)1N100P.pdf
IXTY1N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO252
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXFA4N100P-TRL
IXFA4N100P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 4A; 150W; D2PAK,TO263; 300ns
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 3.3Ω
Reverse recovery time: 300ns
Power dissipation: 150W
Gate charge: 26nC
Technology: HiPerFET™
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXFK32N100P IXFK(X)32N100P.pdf
IXFK32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.32Ω
Power dissipation: 960W
Gate charge: 225nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXFX32N100P IXFK(X)32N100P.pdf
IXFX32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: PLUS247™
On-state resistance: 0.32Ω
Power dissipation: 960W
Gate charge: 225nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTA08N100P IXTA(P,Y)08N100P.pdf
IXTA08N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO263
On-state resistance: 20Ω
Reverse recovery time: 750ns
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTA1N100P IXTA(P,Y)1N100P.pdf
IXTA1N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO263
On-state resistance: 15Ω
Reverse recovery time: 750ns
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXYH10N170C IXYH10N170C.pdf
IXYH10N170C
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 10A; 280W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Power dissipation: 280W
Case: TO247-3
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 260ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXYH10N170CV1 IXYH10N170Cv1.pdf
IXYH10N170CV1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 10A; 280W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Power dissipation: 280W
Case: TO247-3
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 260ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXDF602SIA IXD_602.pdf
IXDF602SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+105.15 грн
10+85.75 грн
18+56.04 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IXDF602PI IXD_602.pdf
IXDF602PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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IXDF602CSIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
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IXDF602CSIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXDF602D2TR media?resourcetype=datasheets&itemid=75D5DB43-B768-4A16-B76F-C3313DC04096&filename=IXD-602
IXDF602D2TR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXDF602SI IXD_602.pdf
IXDF602SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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В кошику  од. на суму  грн.
IXDF602SIATR media?resourcetype=datasheets&itemid=75D5DB43-B768-4A16-B76F-C3313DC04096&filename=IXD-602
IXDF602SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXDF602SITR media?resourcetype=datasheets&itemid=75D5DB43-B768-4A16-B76F-C3313DC04096&filename=IXD-602
IXDF602SITR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DPG80C400HB media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet
DPG80C400HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; Ifsm: 400A; TO247-3; tube; 215W
Mounting: THT
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.43V
Power dissipation: 215W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.4kV
Load current: 40A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Reverse recovery time: 45ns
на замовлення 292 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+850.32 грн
2+494.98 грн
6+467.81 грн
30+453.38 грн
В кошику  од. на суму  грн.
DSEE55-24N1F media?resourcetype=datasheets&itemid=bbc3c036-3bc3-4bdd-bdc6-79f0ab7a10f9&filename=Littelfuse-Power-Semiconductors-DSEE55-24N1F-Datasheet
DSEE55-24N1F
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 800A; tube; Ufmax: 1.56V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.8kA
Case: ISOPLUS i4-pac™ x024b
Kind of package: tube
Max. forward voltage: 1.56V
Power dissipation: 250W
Reverse recovery time: 85ns
Technology: HiPerFRED™
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IXTA24N65X2 IXT_24N65X2.pdf
IXTA24N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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