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IXYX40N250CHV IXYX40N250CHV IXYS Description: IGBT 2500V 70A TO-247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1500 W
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
1+2939.82 грн
30+1914.12 грн
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IXBT32N300HV IXBT32N300HV IXYS littelfuse_discrete_igbts_bimosfet_ixb_32n300hv_datasheet.pdf.pdf Description: IGBT 3000V 80A 400W TO268
товару немає в наявності
 Мінімальне замовлення: 30 шт
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IXFP60N25X3M IXFP60N25X3M IXYS littelfuse-discrete-mosfets-ixf-60n25x3-datasheet?assetguid=27d3d003-ebe6-4c6c-ad92-c705963c1606 Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
1+662.48 грн
50+351.59 грн
100+324.00 грн
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IXFP60N25X3 IXFP60N25X3 IXYS DS100807CIXFAFPFQ60N25X3.pdf Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+608.37 грн
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IXFN170N25X3 IXFN170N25X3 IXYS DS100825AIXFN170N25X3.pdf Description: MOSFET N-CH 250V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 337 шт:
термін постачання 21-31 дні (днів)
1+2292.80 грн
10+1634.32 грн
100+1445.22 грн
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IXYH12N250C IXYH12N250C IXYS DS100791(IXYH12N250C)_.pdf Description: IGBT 2500V 28A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYH12N250CV1HV IXYH12N250CV1HV IXYS Littelfuse-Discrete-IGBTs-XPT-IXY-12N250CV1HV-Datasheet.PDF?assetguid=13066E92-8F65-4AAC-919D-EA0E27499314 Description: IGBT 2500V 28A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товару немає в наявності
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IXYH16N250C IXYS DS100793A(IXYH16N250C)_.pdf Description: IGBT 2500V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
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IXYH16N250CV1HV IXYH16N250CV1HV IXYS littelfuse-discrete-igbts-ixyh16n250cv1hv-datasheet?assetguid=5318cb59-5d48-4684-be30-d9ed77832219 Description: IGBT 2500V 35A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
1+2579.59 грн
30+1643.48 грн
120+1543.82 грн
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IXFC24N50Q IXFC24N50Q IXYS IXFC26N50,_IXFC24N50.pdf Description: MOSFET N-CH 500V 21A ISOPLUS220
Packaging: Bulk
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFD23N60Q-72 IXYS Description: MOSFET N-CHANNEL 600V DIE
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IXFD24N50Q-72 IXYS Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
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IXFD26N50Q-72 IXYS Description: MOSFET N-CHANNEL 500V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
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IXFD26N60Q-8XQ IXYS Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
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IXFD40N30Q-72 IXYS Description: MOSFET N-CHANNEL 300V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
товару немає в наявності
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IXFJ32N50 IXYS Description: MOSFET N-CH TO-220
Packaging: Tube
Part Status: Obsolete
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IXFJ40N30Q IXFJ40N30Q IXYS IXFJ40N30.pdf Description: MOSFET N-CHANNEL 300V 40A TO268
Packaging: Tube
Package / Case: 3-SIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFR21N50Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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IXFR32N50 IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
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IXFX60N25Q IXYS Description: MOSFET N-CH PLUS247
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IXTH21N50Q IXYS IXT%28H%2CM%2921N50%2CIXT%28H%2CM%2924N50.pdf Description: MOSFET N-CH 500V 21A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFT26N50Q TR IXYS IXF%28H%2CT%2924N50Q%2C_IXF%28H%2CT%2926N50Q.pdf Description: MOSFET N-CH 500V 26A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IXFT40N30Q TR IXYS IXF%28H%2CT%2940N30Q.pdf Description: MOSFET N-CH 300V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
товару немає в наявності
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DCG100X1200NA DCG100X1200NA IXYS DCG100X1200NA.pdf Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 49A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 500 µA @ 1200 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+11296.24 грн
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DCG130X1200NA DCG130X1200NA IXYS media?resourcetype=datasheets&itemid=6a83c2d9-3c20-43d3-8da7-e72457acf58a&filename=Littelfuse-Power-Semiconductors-DCG130X1200NA-Datasheet Description: DIODE MOD SIC 1200V 64A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 800 µA @ 1200 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
1+14365.93 грн
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IXFQ120N25X3 IXFQ120N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_120n25x3_datasheet.pdf.pdf Description: MOSFET N-CHANNEL 250V 120A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
на замовлення 746 шт:
термін постачання 21-31 дні (днів)
1+902.12 грн
10+798.36 грн
100+674.26 грн
500+562.89 грн
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IXFT120N25X3HV IXFT120N25X3HV IXYS littelfuse-discrete-mosfets-ixf-120n25x3-datasheet?assetguid=32d93b23-abe5-4e3b-9e77-4ead47fb5303 Description: MOSFET N-CH 250V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
1+1325.74 грн
30+793.20 грн
60+735.75 грн
120+645.15 грн
510+610.57 грн
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IXFT150N25X3HV IXFT150N25X3HV IXYS DS100838CIXFTFH150N25X3HV.pdf Description: MOSFET N-CH 250V 150A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 1024 шт:
термін постачання 21-31 дні (днів)
1+2157.52 грн
30+1354.90 грн
60+1269.11 грн
120+1152.02 грн
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IXFH150N25X3 IXFH150N25X3 IXYS DS100838CIXFTFH150N25X3HV.pdf Description: MOSFET N-CH 250V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 332 шт:
термін постачання 21-31 дні (днів)
1+1452.52 грн
30+878.98 грн
60+817.20 грн
120+718.16 грн
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IXFP30N25X3 IXFP30N25X3 IXYS littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d Description: MOSFET N-CHANNEL 250V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 2324 шт:
термін постачання 21-31 дні (днів)
1+524.89 грн
50+273.95 грн
100+251.64 грн
500+202.13 грн
В кошику  од. на суму  грн.
DSA15IM150UC-TRL IXYS media?resourcetype=datasheets&itemid=51139561-b5d6-4fbf-a5b5-e3e0450cdf00&filename=power_semiconductor_discrete_diode_dsa15im150uc_datasheet.pdf Description: DIODE SCHOTTKY 150V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
товару немає в наявності
 Мінімальне замовлення: 32500 шт
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IXFA36N20X3 IXFA36N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_36n20x3_datasheet.pdf.pdf Description: MOSFET N-CH 200V 36A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
товару немає в наявності
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IXFQ72N20X3 IXFQ72N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n20x3_datasheet.pdf.pdf Description: MOSFET N-CH 200V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
1+742.11 грн
10+645.54 грн
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IXFH90N20X3 IXFH90N20X3 IXYS littelfuse-discrete-mosfets-ixf-90n20x3-datasheet?assetguid=ef17b718-d7de-4f53-8035-337c9d3e0de8 Description: MOSFET N-CH 200V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+826.37 грн
30+476.17 грн
60+438.08 грн
120+381.07 грн
В кошику  од. на суму  грн.
IXFP90N20X3 IXFP90N20X3 IXYS littelfuse-discrete-mosfets-ixf-90n20x3-datasheet?assetguid=ef17b718-d7de-4f53-8035-337c9d3e0de8 Description: MOSFET N-CH 200V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)
1+700.36 грн
10+463.16 грн
50+372.93 грн
100+322.76 грн
500+275.12 грн
В кошику  од. на суму  грн.
IXFP90N20X3M IXFP90N20X3M IXYS littelfuse-discrete-mosfets-ixfp90n20x3m-datasheet?assetguid=006f1305-f7af-44eb-b713-23345c7030a4 Description: MOSFET N-CH 200V 90A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
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IXFA90N20X3 IXFA90N20X3 IXYS littelfuse-discrete-mosfets-ixfa90n20x3-datasheet?assetguid=931087c8-e197-4323-a05d-f63953bc30e1 Description: MOSFET N-CH 200V 90A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
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IXFH140N20X3 IXFH140N20X3 IXYS littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842 Description: MOSFET N-CH 200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
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IXFQ140N20X3 IXFQ140N20X3 IXYS littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842 Description: MOSFET N-CH 200V 140A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+943.09 грн
В кошику  од. на суму  грн.
IXFT140N20X3HV IXFT140N20X3HV IXYS littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842 Description: MOSFET N-CH 200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
товару немає в наявності
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IXFN220N20X3 IXFN220N20X3 IXYS littelfuse-discrete-mosfets-ixfn220n20x3-datasheet?assetguid=7f9d048f-b652-432d-a9b0-e166f13b2193 Description: MOSFET N-CH 200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+2881.84 грн
10+2069.79 грн
50+1769.89 грн
100+1644.70 грн
В кошику  од. на суму  грн.
IXFH180N20X3 IXFH180N20X3 IXYS littelfuse-discrete-mosfets-ixf-180n20x3-datasheet?assetguid=e776435a-0ad7-472c-a5ba-3ce355c07926 Description: MOSFET N-CH 200V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
1+1170.36 грн
30+701.37 грн
120+617.46 грн
В кошику  од. на суму  грн.
IXFK220N20X3 IXFK220N20X3 IXYS littelfuse-discrete-mosfets-ixf-220n20x3-datasheet?assetguid=6f4e90fe-6272-422e-a0c7-6b3f43b68d9b Description: MOSFET N-CH 200V 220A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
1+983.29 грн
25+847.18 грн
100+807.65 грн
В кошику  од. на суму  грн.
IXFH220N20X3 IXFH220N20X3 IXYS littelfuse-discrete-mosfets-ixf-220n20x3-datasheet?assetguid=6f4e90fe-6272-422e-a0c7-6b3f43b68d9b Description: MOSFET N-CH 200V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
товару немає в наявності
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IXFX300N20X3 IXFX300N20X3 IXYS littelfuse-discrete-mosfets-ixf-300n20x3-datasheet?assetguid=53bbefbe-ccd6-4511-b54f-ab0660bbdb90 Description: MOSFET N-CH 200V 300A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
1+2602.78 грн
30+1661.44 грн
60+1561.22 грн
120+1456.68 грн
В кошику  од. на суму  грн.
IXFN300N20X3 IXFN300N20X3 IXYS littelfuse-discrete-mosfets-ixfn300n20x3-datasheet?assetguid=51be43a2-5129-4449-8dce-f187571aa6ec Description: MOSFET N-CH 200V 300A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 150A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+3638.64 грн
10+2653.55 грн
50+2350.13 грн
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IXFQ90N20X3 IXFQ90N20X3 IXYS pdf&Policy=eyJTdGF0ZW1lbnQiOlt7IlJlc291cmNlIjoiaHR0cCo6L Description: MOSFET N-CH 200V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH72N30X3 IXFH72N30X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n30x3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
1+848.78 грн
10+700.40 грн
В кошику  од. на суму  грн.
IXFH100N30X3 IXFH100N30X3 IXYS littelfusediscretemosfetsnchannelultrajunctionixf100n30x3hvdatasheetpdf.pdf Description: MOSFET N-CH 300V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
1+1180.41 грн
30+703.03 грн
60+651.43 грн
120+570.64 грн
В кошику  од. на суму  грн.
IXFH120N30X3 IXFH120N30X3 IXYS DS100865AIXFTFH120N30X3HV.pdf Description: MOSFET N-CH 300V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
1+1539.87 грн
30+931.71 грн
60+866.23 грн
120+761.26 грн
В кошику  од. на суму  грн.
IXFK150N30X3 IXFK150N30X3 IXYS littelfuse-discrete-mosfets-ixf-150n30x3-datasheet?assetguid=83a64f6f-6a47-48a3-8b4f-76282d76d8b6 Description: MOSFET N-CH 300V 150A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFP38N30X3M IXFP38N30X3M IXYS littelfuse-discrete-mosfets-ixfp38n30x3m-datasheet?assetguid=beda6aca-89ff-4274-bbc4-15cadd4140b0 Description: MOSFET N-CH 300V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Power Dissipation (Max): 34W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
на замовлення 2160 шт:
термін постачання 21-31 дні (днів)
1+551.94 грн
50+287.19 грн
100+263.64 грн
500+208.71 грн
1000+196.58 грн
В кошику  од. на суму  грн.
IXFP38N30X3 IXFP38N30X3 IXYS littelfuse-discrete-mosfets-ixf-38n30x3-datasheet?assetguid=bf5a0d57-37da-484a-a94b-aa873a26c7d4 Description: MOSFET N-CH 300V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
на замовлення 665 шт:
термін постачання 21-31 дні (днів)
1+412.02 грн
50+187.47 грн
100+186.17 грн
500+166.92 грн
В кошику  од. на суму  грн.
CS19-12HO1S-TUB CS19-12HO1S-TUB IXYS media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet Description: SCR 1200V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.2 kV
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+235.00 грн
50+179.30 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSP8-12AS-TUB DSP8-12AS-TUB IXYS Littelfuse-Power-Semiconductors-DSP8-12AS-Datasheet?assetguid=0a50aae9-2beb-4071-ac11-756d406726b3 Description: DIODE ARRAY GP 1200V 8A TO263
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
 Мінімальне замовлення: 1400 шт
В кошику  од. на суму  грн.
DSSK16-01AS-TUB IXYS Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 24000 шт
В кошику  од. на суму  грн.
DSSK28-0045BS-TUB IXYS Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
DSSK28-01AS-TUB IXYS DSSK28-01AS.pdf Description: DIODE ARRAY SCHOTTKY
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
DSSK38-0025BS-TUB IXYS DSSK38-0025B.pdf Description: DIODE ARRAY SCHOTTKY
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
DSSK48-003BS-TUB DSSK48-003BS-TUB IXYS DSSK48-003BS.pdf Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 30 V
товару немає в наявності
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IXYX40N250CHV
IXYX40N250CHV
Виробник: IXYS
Description: IGBT 2500V 70A TO-247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1500 W
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2939.82 грн
30+1914.12 грн
В кошику  од. на суму  грн.
IXBT32N300HV littelfuse_discrete_igbts_bimosfet_ixb_32n300hv_datasheet.pdf.pdf
IXBT32N300HV
Виробник: IXYS
Description: IGBT 3000V 80A 400W TO268
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXFP60N25X3M littelfuse-discrete-mosfets-ixf-60n25x3-datasheet?assetguid=27d3d003-ebe6-4c6c-ad92-c705963c1606
IXFP60N25X3M
Виробник: IXYS
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+662.48 грн
50+351.59 грн
100+324.00 грн
В кошику  од. на суму  грн.
IXFP60N25X3 DS100807CIXFAFPFQ60N25X3.pdf
IXFP60N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+608.37 грн
В кошику  од. на суму  грн.
IXFN170N25X3 DS100825AIXFN170N25X3.pdf
IXFN170N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 337 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2292.80 грн
10+1634.32 грн
100+1445.22 грн
В кошику  од. на суму  грн.
IXYH12N250C DS100791(IXYH12N250C)_.pdf
IXYH12N250C
Виробник: IXYS
Description: IGBT 2500V 28A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH12N250CV1HV Littelfuse-Discrete-IGBTs-XPT-IXY-12N250CV1HV-Datasheet.PDF?assetguid=13066E92-8F65-4AAC-919D-EA0E27499314
IXYH12N250CV1HV
Виробник: IXYS
Description: IGBT 2500V 28A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товару немає в наявності
В кошику  од. на суму  грн.
IXYH16N250C DS100793A(IXYH16N250C)_.pdf
Виробник: IXYS
Description: IGBT 2500V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
товару немає в наявності
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IXYH16N250CV1HV littelfuse-discrete-igbts-ixyh16n250cv1hv-datasheet?assetguid=5318cb59-5d48-4684-be30-d9ed77832219
IXYH16N250CV1HV
Виробник: IXYS
Description: IGBT 2500V 35A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2579.59 грн
30+1643.48 грн
120+1543.82 грн
В кошику  од. на суму  грн.
IXFC24N50Q IXFC26N50,_IXFC24N50.pdf
IXFC24N50Q
Виробник: IXYS
Description: MOSFET N-CH 500V 21A ISOPLUS220
Packaging: Bulk
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товару немає в наявності
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IXFD23N60Q-72
Виробник: IXYS
Description: MOSFET N-CHANNEL 600V DIE
товару немає в наявності
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IXFD24N50Q-72
Виробник: IXYS
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
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IXFD26N50Q-72
Виробник: IXYS
Description: MOSFET N-CHANNEL 500V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
товару немає в наявності
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IXFD26N60Q-8XQ
Виробник: IXYS
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
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IXFD40N30Q-72
Виробник: IXYS
Description: MOSFET N-CHANNEL 300V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
товару немає в наявності
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IXFJ32N50
Виробник: IXYS
Description: MOSFET N-CH TO-220
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
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IXFJ40N30Q IXFJ40N30.pdf
IXFJ40N30Q
Виробник: IXYS
Description: MOSFET N-CHANNEL 300V 40A TO268
Packaging: Tube
Package / Case: 3-SIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFR21N50Q
Виробник: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
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IXFR32N50
Виробник: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
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IXFX60N25Q
Виробник: IXYS
Description: MOSFET N-CH PLUS247
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IXTH21N50Q IXT%28H%2CM%2921N50%2CIXT%28H%2CM%2924N50.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 21A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товару немає в наявності
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IXFT26N50Q TR IXF%28H%2CT%2924N50Q%2C_IXF%28H%2CT%2926N50Q.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
товару немає в наявності
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IXFT40N30Q TR IXF%28H%2CT%2940N30Q.pdf
Виробник: IXYS
Description: MOSFET N-CH 300V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
товару немає в наявності
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DCG100X1200NA DCG100X1200NA.pdf
DCG100X1200NA
Виробник: IXYS
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 49A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 500 µA @ 1200 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+11296.24 грн
В кошику  од. на суму  грн.
DCG130X1200NA media?resourcetype=datasheets&itemid=6a83c2d9-3c20-43d3-8da7-e72457acf58a&filename=Littelfuse-Power-Semiconductors-DCG130X1200NA-Datasheet
DCG130X1200NA
Виробник: IXYS
Description: DIODE MOD SIC 1200V 64A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 800 µA @ 1200 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+14365.93 грн
В кошику  од. на суму  грн.
IXFQ120N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_120n25x3_datasheet.pdf.pdf
IXFQ120N25X3
Виробник: IXYS
Description: MOSFET N-CHANNEL 250V 120A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
на замовлення 746 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+902.12 грн
10+798.36 грн
100+674.26 грн
500+562.89 грн
В кошику  од. на суму  грн.
IXFT120N25X3HV littelfuse-discrete-mosfets-ixf-120n25x3-datasheet?assetguid=32d93b23-abe5-4e3b-9e77-4ead47fb5303
IXFT120N25X3HV
Виробник: IXYS
Description: MOSFET N-CH 250V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1325.74 грн
30+793.20 грн
60+735.75 грн
120+645.15 грн
510+610.57 грн
В кошику  од. на суму  грн.
IXFT150N25X3HV DS100838CIXFTFH150N25X3HV.pdf
IXFT150N25X3HV
Виробник: IXYS
Description: MOSFET N-CH 250V 150A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 1024 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2157.52 грн
30+1354.90 грн
60+1269.11 грн
120+1152.02 грн
В кошику  од. на суму  грн.
IXFH150N25X3 DS100838CIXFTFH150N25X3HV.pdf
IXFH150N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 332 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1452.52 грн
30+878.98 грн
60+817.20 грн
120+718.16 грн
В кошику  од. на суму  грн.
IXFP30N25X3 littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d
IXFP30N25X3
Виробник: IXYS
Description: MOSFET N-CHANNEL 250V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 2324 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+524.89 грн
50+273.95 грн
100+251.64 грн
500+202.13 грн
В кошику  од. на суму  грн.
DSA15IM150UC-TRL media?resourcetype=datasheets&itemid=51139561-b5d6-4fbf-a5b5-e3e0450cdf00&filename=power_semiconductor_discrete_diode_dsa15im150uc_datasheet.pdf
Виробник: IXYS
Description: DIODE SCHOTTKY 150V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 32500 шт
В кошику  од. на суму  грн.
IXFA36N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_36n20x3_datasheet.pdf.pdf
IXFA36N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
товару немає в наявності
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IXFQ72N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n20x3_datasheet.pdf.pdf
IXFQ72N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+742.11 грн
10+645.54 грн
В кошику  од. на суму  грн.
IXFH90N20X3 littelfuse-discrete-mosfets-ixf-90n20x3-datasheet?assetguid=ef17b718-d7de-4f53-8035-337c9d3e0de8
IXFH90N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+826.37 грн
30+476.17 грн
60+438.08 грн
120+381.07 грн
В кошику  од. на суму  грн.
IXFP90N20X3 littelfuse-discrete-mosfets-ixf-90n20x3-datasheet?assetguid=ef17b718-d7de-4f53-8035-337c9d3e0de8
IXFP90N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+700.36 грн
10+463.16 грн
50+372.93 грн
100+322.76 грн
500+275.12 грн
В кошику  од. на суму  грн.
IXFP90N20X3M littelfuse-discrete-mosfets-ixfp90n20x3m-datasheet?assetguid=006f1305-f7af-44eb-b713-23345c7030a4
IXFP90N20X3M
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
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IXFA90N20X3 littelfuse-discrete-mosfets-ixfa90n20x3-datasheet?assetguid=931087c8-e197-4323-a05d-f63953bc30e1
IXFA90N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
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IXFH140N20X3 littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842
IXFH140N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFQ140N20X3 littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842
IXFQ140N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 140A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+943.09 грн
В кошику  од. на суму  грн.
IXFT140N20X3HV littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842
IXFT140N20X3HV
Виробник: IXYS
Description: MOSFET N-CH 200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFN220N20X3 littelfuse-discrete-mosfets-ixfn220n20x3-datasheet?assetguid=7f9d048f-b652-432d-a9b0-e166f13b2193
IXFN220N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2881.84 грн
10+2069.79 грн
50+1769.89 грн
100+1644.70 грн
В кошику  од. на суму  грн.
IXFH180N20X3 littelfuse-discrete-mosfets-ixf-180n20x3-datasheet?assetguid=e776435a-0ad7-472c-a5ba-3ce355c07926
IXFH180N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1170.36 грн
30+701.37 грн
120+617.46 грн
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IXFK220N20X3 littelfuse-discrete-mosfets-ixf-220n20x3-datasheet?assetguid=6f4e90fe-6272-422e-a0c7-6b3f43b68d9b
IXFK220N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 220A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+983.29 грн
25+847.18 грн
100+807.65 грн
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IXFH220N20X3 littelfuse-discrete-mosfets-ixf-220n20x3-datasheet?assetguid=6f4e90fe-6272-422e-a0c7-6b3f43b68d9b
IXFH220N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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IXFX300N20X3 littelfuse-discrete-mosfets-ixf-300n20x3-datasheet?assetguid=53bbefbe-ccd6-4511-b54f-ab0660bbdb90
IXFX300N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 300A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2602.78 грн
30+1661.44 грн
60+1561.22 грн
120+1456.68 грн
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IXFN300N20X3 littelfuse-discrete-mosfets-ixfn300n20x3-datasheet?assetguid=51be43a2-5129-4449-8dce-f187571aa6ec
IXFN300N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 300A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 150A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3638.64 грн
10+2653.55 грн
50+2350.13 грн
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IXFQ90N20X3 pdf&Policy=eyJTdGF0ZW1lbnQiOlt7IlJlc291cmNlIjoiaHR0cCo6L
IXFQ90N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFH72N30X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n30x3_datasheet.pdf.pdf
IXFH72N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+848.78 грн
10+700.40 грн
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IXFH100N30X3 littelfusediscretemosfetsnchannelultrajunctionixf100n30x3hvdatasheetpdf.pdf
IXFH100N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1180.41 грн
30+703.03 грн
60+651.43 грн
120+570.64 грн
В кошику  од. на суму  грн.
IXFH120N30X3 DS100865AIXFTFH120N30X3HV.pdf
IXFH120N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1539.87 грн
30+931.71 грн
60+866.23 грн
120+761.26 грн
В кошику  од. на суму  грн.
IXFK150N30X3 littelfuse-discrete-mosfets-ixf-150n30x3-datasheet?assetguid=83a64f6f-6a47-48a3-8b4f-76282d76d8b6
IXFK150N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 150A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
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IXFP38N30X3M littelfuse-discrete-mosfets-ixfp38n30x3m-datasheet?assetguid=beda6aca-89ff-4274-bbc4-15cadd4140b0
IXFP38N30X3M
Виробник: IXYS
Description: MOSFET N-CH 300V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Power Dissipation (Max): 34W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
на замовлення 2160 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+551.94 грн
50+287.19 грн
100+263.64 грн
500+208.71 грн
1000+196.58 грн
В кошику  од. на суму  грн.
IXFP38N30X3 littelfuse-discrete-mosfets-ixf-38n30x3-datasheet?assetguid=bf5a0d57-37da-484a-a94b-aa873a26c7d4
IXFP38N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
на замовлення 665 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+412.02 грн
50+187.47 грн
100+186.17 грн
500+166.92 грн
В кошику  од. на суму  грн.
CS19-12HO1S-TUB media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet
CS19-12HO1S-TUB
Виробник: IXYS
Description: SCR 1200V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.2 kV
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+235.00 грн
50+179.30 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSP8-12AS-TUB Littelfuse-Power-Semiconductors-DSP8-12AS-Datasheet?assetguid=0a50aae9-2beb-4071-ac11-756d406726b3
DSP8-12AS-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 8A TO263
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 1400 шт
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DSSK16-01AS-TUB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 24000 шт
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DSSK28-0045BS-TUB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
товару немає в наявності
Мінімальне замовлення: 8000 шт
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DSSK28-01AS-TUB DSSK28-01AS.pdf
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
товару немає в наявності
Мінімальне замовлення: 50 шт
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DSSK38-0025BS-TUB DSSK38-0025B.pdf
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
товару немає в наявності
Мінімальне замовлення: 50 шт
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DSSK48-003BS-TUB DSSK48-003BS.pdf
DSSK48-003BS-TUB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 30 V
товару немає в наявності
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