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IXYA20N65B3 IXYA20N65B3 IXYS littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 700µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
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IXYA20N65C3 IXYA20N65C3 IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Description: IGBT 650V 20A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
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IXYA20N65C3D1 IXYA20N65C3D1 IXYS media?resourcetype=datasheets&itemid=240AF429-77F9-404E-8BCC-BC19E7D8DE31&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-20N65C3D1-Datasheet.PDF Description: IGBT 650V 50A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
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IXYH75N120B4 IXYS Description: IGBT 1200V 240A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 66 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 22ns/182ns
Switching Energy: 4.5mJ (on), 2.7mJ (off)
Test Condition: 600V, 50A, 3Ohm, 15V
Gate Charge: 157 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 1150 W
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IXYK100N65B3D1 IXYK100N65B3D1 IXYS littelfuse_discrete_igbts_xpt_ixy_100n65b3d1_datasheet.pdf.pdf Description: IGBT 650V 225A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: TO-264
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 2mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
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IXYN150N60B3 IXYN150N60B3 IXYS DS100548BIXYN150N60B3.pdf Description: IGBT 600V 250A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS media?resourcetype=datasheets&itemid=E2B2305A-9E89-4C80-8C55-A8326724C428&filename=Littelfuse-Discrete-IGBTs-XPT-IXYN75N65C3D1-Datasheet.PDF Description: IGBT 650V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 600 W
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IXYP10N65C3D1M IXYP10N65C3D1M IXYS littelfuse-discrete-igbts-ixyp10n65c3d1m-datasheet?assetguid=2cc6910c-4476-449b-a3db-8b1776468953 Description: IGBT 650V 15A TO220 ISOLATED TAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Supplier Device Package: TO-220 Isolated Tab
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 53 W
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IXYQ40N65C3D1 IXYQ40N65C3D1 IXYS littelfuse_discrete_igbts_xpt_ixy_40n65c3d1_datasheet.pdf.pdf Description: IGBT
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IXYR100N65A3V1 IXYS Description: IGBT
Packaging: Tube
Part Status: Active
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IXYT20N120C3D1HV IXYT20N120C3D1HV IXYS DS100514BIXYT20N120C3D1HV.pdf Description: IGBT 1200V 36A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
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IXYT30N450HV IXYT30N450HV IXYS littelfuse-discrete-igbts-ixy-30n450hv-datasheet?assetguid=8177b3a8-4830-4a30-aa21-82b58521b532 Description: IGBT 4500V 60A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
1+3841.07 грн
30+2672.33 грн
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IXYX120N120B3 IXYX120N120B3 IXYS DS100646IXYKX120N120B3.pdf Description: IGBT 1200V 320A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
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MMIX2F60N50P3 MMIX2F60N50P3 IXYS 238_MMIX2F60N50P3.pdf Description: MOSFET 2N-CH 500V 30A 24SMPD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: 24-SMPD
Part Status: Active
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ZY180LM ZY180LM IXYS lfsisa001004037012273451.PDF Description: X SERIES KEY PLUG
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
5+82.14 грн
10+49.69 грн
100+32.57 грн
500+23.67 грн
1000+21.45 грн
2000+19.58 грн
Мінімальне замовлення: 5
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ZY180RM IXYS Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
500+23.51 грн
Мінімальне замовлення: 500
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ZY200LM ZY200LM IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
на замовлення 30003 шт:
термін постачання 21-31 дні (днів)
7+56.47 грн
10+47.13 грн
100+32.61 грн
500+25.57 грн
1000+21.76 грн
2000+19.38 грн
5000+18.06 грн
10000+16.72 грн
Мінімальне замовлення: 7
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ZY200RM ZY200RM IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
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IXTY1R4N60P TRL IXTY1R4N60P TRL IXYS IXTx1R4N60P.pdf Description: MOSFET N-CH 600V 1.4A TO252
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IXTD1R4N60P 11 IXYS Description: MOSFET N-CH 600V 1.4A DIE
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T-TD1R4N60P 11 IXYS Description: MOSFET N-CH 600V
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IXFM10N90 IXYS Description: MOSFET N-CH 900V 10A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM11N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh13n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM42N20 IXYS littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca Description: MOSFET N-CH 200V 42A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IXTM10P60 IXYS Description: POWER MOSFET TO-3
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IXTM11N80 IXYS Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXTM12N100 IXYS Description: MOSFET N-CH 1000V 12A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXTM21N50L IXYS Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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IXTM24N50L IXYS Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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IXTM40N30 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth40n30_datasheet.pdf.pdf Description: MOSFET N-CH 300V 40A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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IXTM50N20 IXYS Description: MOSFET N-CH 200V 50A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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IXFP12N65X2M IXFP12N65X2M IXYS littelfuse-discrete-mosfets-ixfp12n65x2m-datasheet?assetguid=c1c8d93a-0436-4ab9-8017-976e24f2421b Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 773 шт:
термін постачання 21-31 дні (днів)
1+371.36 грн
50+186.04 грн
100+169.48 грн
500+131.84 грн
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IXTP12N65X2M IXTP12N65X2M IXYS ixty2n65x2.pdf Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
300+154.17 грн
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IXTD2N60P-1J IXYS Description: MOSFET N-CH 600V 2A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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IXTD3N60P-2J IXYS Description: MOSFET N-CH 600V 3A DIE
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MIXA100PF1200TMH IXYS Description: MOD IGBT LEG DIODE NTC
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IXFN52N100X IXFN52N100X IXYS Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100911B(IXFN52N100X).pdf Description: MOSFET N-CH 1000V 44A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
1+4741.22 грн
10+4259.43 грн
100+3698.29 грн
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IXFN70N100X IXFN70N100X IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Ultra-Junction-IXFN70N100X-Datasheet.PDF?assetguid=58A81923-4018-4CD9-9BC6-11E4B0845582 Description: MOSFET N-CH 1000V 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
Power Dissipation (Max): 1200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
1+4680.47 грн
10+3459.19 грн
100+3403.19 грн
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SM232K10L SM232K10L IXYS SM232K10L.pdf Description: MONOCRYST SOLAR CELL 5.07W 6.91V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+6722.93 грн
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IXFN74N100X IXFN74N100X IXYS IXFN74N100X.pdf Description: MOSFET N-CH 1000V 74A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 37A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
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IXTH130N15X4 IXTH130N15X4 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_130n15x4_datasheet.pdf.pdf Description: MOSFET N-CH 150V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
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IXTP130N15X4 IXTP130N15X4 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_130n15x4_datasheet.pdf.pdf Description: MOSFET N-CH 150V 130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)
1+527.09 грн
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100+362.27 грн
500+299.98 грн
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M0955JK250 IXYS Description: DIODE STANDARD 2500V 1105A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Current - Average Rectified (Io): 1105A
Supplier Device Package: W113
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1000 A
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N3597ML020 IXYS Description: SCR 200V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 200 V
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A1237NC280 IXYS Description: SCR 2.8KV 2555A W11
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K0500LC600 IXYS Description: SCR 6KV 975A W10
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N5415EA360 IXYS Description: PHASE CONTROL THYRISTOR
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N2418ZD360 IXYS Description: SCR 3.6KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - On State (It (AV)) (Max): 2418 A
Supplier Device Package: W46
Voltage - Off State: 3.6 kV
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N3597ML060 IXYS Description: SCR 600V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 600 V
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N4165EE420 IXYS media?resourcetype=datasheets&itemid=8F5629D2-3A9B-4EB7-9D3A-E75EDB824EC3&filename=Littelfuse-Discrete-Thyristors-Phase-Control-N4165EE4-0-Datasheet.PDF Description: SCR 4.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 56000A @ 50Hz
Current - On State (It (AV)) (Max): 4165 A
Supplier Device Package: W108
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.2 kV
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N1174JK200 IXYS littelfusediscretethyristorsphasecontroln1174jk20datasheetpdf.pdf Description: SCR 2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2 kV
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W3090HA600 IXYS Description: RECTIFIER DIODE
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K4005EA520 K4005EA520 IXYS media?resourcetype=datasheets&itemid=795C785D-F0BC-46A5-92CF-F8E2F0AE9927&filename=Littelfuse-Discrete-Thyristors-Medium-Voltage-K4005EA480-520-Datasheet Description: SCR 5.2KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 5.2 kV
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K1010MA650 IXYS Description: PHASE CONTROL THYRISTOR
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P0848YC06C IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
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W6262ZC200 IXYS Description: DIODE STANDARD 2000V 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
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P0848YC04C IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
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K4005EA480 K4005EA480 IXYS media?resourcetype=datasheets&itemid=795C785D-F0BC-46A5-92CF-F8E2F0AE9927&filename=Littelfuse-Discrete-Thyristors-Medium-Voltage-K4005EA480-520-Datasheet Description: SCR 4.8KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.8 kV
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N3597ML040 IXYS media?resourcetype=datasheets&amp;itemid=c9853d53-1646-4292-a3e7-bcf7cec017d2&amp;filename=littelfuse_discrete_thyristors_phase_control_n3597ml0_0_datasheet.pdf Description: SCR 400V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 400 V
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W6262ZC240 IXYS Description: DIODE STANDARD 2400V 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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IXYA20N65B3 littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf.pdf
IXYA20N65B3
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 700µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
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IXYA20N65C3 littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
IXYA20N65C3
Виробник: IXYS
Description: IGBT 650V 20A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
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IXYA20N65C3D1 media?resourcetype=datasheets&itemid=240AF429-77F9-404E-8BCC-BC19E7D8DE31&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-20N65C3D1-Datasheet.PDF
IXYA20N65C3D1
Виробник: IXYS
Description: IGBT 650V 50A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
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IXYH75N120B4
Виробник: IXYS
Description: IGBT 1200V 240A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 66 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 22ns/182ns
Switching Energy: 4.5mJ (on), 2.7mJ (off)
Test Condition: 600V, 50A, 3Ohm, 15V
Gate Charge: 157 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 1150 W
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IXYK100N65B3D1 littelfuse_discrete_igbts_xpt_ixy_100n65b3d1_datasheet.pdf.pdf
IXYK100N65B3D1
Виробник: IXYS
Description: IGBT 650V 225A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: TO-264
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 2mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
товару немає в наявності
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IXYN150N60B3 DS100548BIXYN150N60B3.pdf
IXYN150N60B3
Виробник: IXYS
Description: IGBT 600V 250A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
товару немає в наявності
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IXYN75N65C3D1 media?resourcetype=datasheets&itemid=E2B2305A-9E89-4C80-8C55-A8326724C428&filename=Littelfuse-Discrete-IGBTs-XPT-IXYN75N65C3D1-Datasheet.PDF
IXYN75N65C3D1
Виробник: IXYS
Description: IGBT 650V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 600 W
товару немає в наявності
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IXYP10N65C3D1M littelfuse-discrete-igbts-ixyp10n65c3d1m-datasheet?assetguid=2cc6910c-4476-449b-a3db-8b1776468953
IXYP10N65C3D1M
Виробник: IXYS
Description: IGBT 650V 15A TO220 ISOLATED TAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Supplier Device Package: TO-220 Isolated Tab
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 53 W
товару немає в наявності
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IXYQ40N65C3D1 littelfuse_discrete_igbts_xpt_ixy_40n65c3d1_datasheet.pdf.pdf
IXYQ40N65C3D1
Виробник: IXYS
Description: IGBT
товару немає в наявності
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IXYR100N65A3V1
Виробник: IXYS
Description: IGBT
Packaging: Tube
Part Status: Active
товару немає в наявності
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IXYT20N120C3D1HV DS100514BIXYT20N120C3D1HV.pdf
IXYT20N120C3D1HV
Виробник: IXYS
Description: IGBT 1200V 36A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
товару немає в наявності
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IXYT30N450HV littelfuse-discrete-igbts-ixy-30n450hv-datasheet?assetguid=8177b3a8-4830-4a30-aa21-82b58521b532
IXYT30N450HV
Виробник: IXYS
Description: IGBT 4500V 60A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3841.07 грн
30+2672.33 грн
В кошику  од. на суму  грн.
IXYX120N120B3 DS100646IXYKX120N120B3.pdf
IXYX120N120B3
Виробник: IXYS
Description: IGBT 1200V 320A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
товару немає в наявності
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MMIX2F60N50P3 238_MMIX2F60N50P3.pdf
MMIX2F60N50P3
Виробник: IXYS
Description: MOSFET 2N-CH 500V 30A 24SMPD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: 24-SMPD
Part Status: Active
товару немає в наявності
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ZY180LM lfsisa001004037012273451.PDF
ZY180LM
Виробник: IXYS
Description: X SERIES KEY PLUG
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+82.14 грн
10+49.69 грн
100+32.57 грн
500+23.67 грн
1000+21.45 грн
2000+19.58 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ZY180RM
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+23.51 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
ZY200LM littelfuse_power_semiconductors_product_catalog.pdf.pdf
ZY200LM
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
на замовлення 30003 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+56.47 грн
10+47.13 грн
100+32.61 грн
500+25.57 грн
1000+21.76 грн
2000+19.38 грн
5000+18.06 грн
10000+16.72 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ZY200RM littelfuse_power_semiconductors_product_catalog.pdf.pdf
ZY200RM
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IXTY1R4N60P TRL IXTx1R4N60P.pdf
IXTY1R4N60P TRL
Виробник: IXYS
Description: MOSFET N-CH 600V 1.4A TO252
товару немає в наявності
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IXTD1R4N60P 11
Виробник: IXYS
Description: MOSFET N-CH 600V 1.4A DIE
товару немає в наявності
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T-TD1R4N60P 11
Виробник: IXYS
Description: MOSFET N-CH 600V
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IXFM10N90
Виробник: IXYS
Description: MOSFET N-CH 900V 10A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товару немає в наявності
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IXFM11N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh13n80_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товару немає в наявності
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IXFM42N20 littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca
Виробник: IXYS
Description: MOSFET N-CH 200V 42A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
товару немає в наявності
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IXTM10P60
Виробник: IXYS
Description: POWER MOSFET TO-3
товару немає в наявності
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IXTM11N80
Виробник: IXYS
Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTM12N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTM21N50L
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IXTM24N50L
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IXTM40N30 littelfuse_discrete_mosfets_n-channel_standard_ixth40n30_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 300V 40A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTM50N20
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXFP12N65X2M littelfuse-discrete-mosfets-ixfp12n65x2m-datasheet?assetguid=c1c8d93a-0436-4ab9-8017-976e24f2421b
IXFP12N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 773 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+371.36 грн
50+186.04 грн
100+169.48 грн
500+131.84 грн
В кошику  од. на суму  грн.
IXTP12N65X2M ixty2n65x2.pdf
IXTP12N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+154.17 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXTD2N60P-1J
Виробник: IXYS
Description: MOSFET N-CH 600V 2A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IXTD3N60P-2J
Виробник: IXYS
Description: MOSFET N-CH 600V 3A DIE
товару немає в наявності
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MIXA100PF1200TMH
Виробник: IXYS
Description: MOD IGBT LEG DIODE NTC
товару немає в наявності
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IXFN52N100X Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100911B(IXFN52N100X).pdf
IXFN52N100X
Виробник: IXYS
Description: MOSFET N-CH 1000V 44A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4741.22 грн
10+4259.43 грн
100+3698.29 грн
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IXFN70N100X Littelfuse-Discrete-MOSFETs-N-Channel-Ultra-Junction-IXFN70N100X-Datasheet.PDF?assetguid=58A81923-4018-4CD9-9BC6-11E4B0845582
IXFN70N100X
Виробник: IXYS
Description: MOSFET N-CH 1000V 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
Power Dissipation (Max): 1200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4680.47 грн
10+3459.19 грн
100+3403.19 грн
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SM232K10L SM232K10L.pdf
SM232K10L
Виробник: IXYS
Description: MONOCRYST SOLAR CELL 5.07W 6.91V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6722.93 грн
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IXFN74N100X IXFN74N100X.pdf
IXFN74N100X
Виробник: IXYS
Description: MOSFET N-CH 1000V 74A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 37A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
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IXTH130N15X4 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_130n15x4_datasheet.pdf.pdf
IXTH130N15X4
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
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IXTP130N15X4 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_130n15x4_datasheet.pdf.pdf
IXTP130N15X4
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+527.09 грн
50+404.88 грн
100+362.27 грн
500+299.98 грн
1000+269.98 грн
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M0955JK250
Виробник: IXYS
Description: DIODE STANDARD 2500V 1105A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Current - Average Rectified (Io): 1105A
Supplier Device Package: W113
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1000 A
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N3597ML020
Виробник: IXYS
Description: SCR 200V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 200 V
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A1237NC280
Виробник: IXYS
Description: SCR 2.8KV 2555A W11
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K0500LC600
Виробник: IXYS
Description: SCR 6KV 975A W10
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N5415EA360
Виробник: IXYS
Description: PHASE CONTROL THYRISTOR
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N2418ZD360
Виробник: IXYS
Description: SCR 3.6KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - On State (It (AV)) (Max): 2418 A
Supplier Device Package: W46
Voltage - Off State: 3.6 kV
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N3597ML060
Виробник: IXYS
Description: SCR 600V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 600 V
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N4165EE420 media?resourcetype=datasheets&itemid=8F5629D2-3A9B-4EB7-9D3A-E75EDB824EC3&filename=Littelfuse-Discrete-Thyristors-Phase-Control-N4165EE4-0-Datasheet.PDF
Виробник: IXYS
Description: SCR 4.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 56000A @ 50Hz
Current - On State (It (AV)) (Max): 4165 A
Supplier Device Package: W108
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.2 kV
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N1174JK200 littelfusediscretethyristorsphasecontroln1174jk20datasheetpdf.pdf
Виробник: IXYS
Description: SCR 2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2 kV
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W3090HA600
Виробник: IXYS
Description: RECTIFIER DIODE
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K4005EA520 media?resourcetype=datasheets&itemid=795C785D-F0BC-46A5-92CF-F8E2F0AE9927&filename=Littelfuse-Discrete-Thyristors-Medium-Voltage-K4005EA480-520-Datasheet
K4005EA520
Виробник: IXYS
Description: SCR 5.2KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 5.2 kV
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K1010MA650
Виробник: IXYS
Description: PHASE CONTROL THYRISTOR
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P0848YC06C media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Виробник: IXYS
Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
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W6262ZC200
Виробник: IXYS
Description: DIODE STANDARD 2000V 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
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P0848YC04C media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Виробник: IXYS
Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
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K4005EA480 media?resourcetype=datasheets&itemid=795C785D-F0BC-46A5-92CF-F8E2F0AE9927&filename=Littelfuse-Discrete-Thyristors-Medium-Voltage-K4005EA480-520-Datasheet
K4005EA480
Виробник: IXYS
Description: SCR 4.8KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.8 kV
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N3597ML040 media?resourcetype=datasheets&amp;itemid=c9853d53-1646-4292-a3e7-bcf7cec017d2&amp;filename=littelfuse_discrete_thyristors_phase_control_n3597ml0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 400V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 400 V
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W6262ZC240
Виробник: IXYS
Description: DIODE STANDARD 2400V 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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