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IXBA16N170AHV IXBA16N170AHV IXYS littelfuse_discrete_igbts_bimosfet_ixb_16n170ahv_datasheet.pdf.pdf Description: REVERSE CONDUCTING IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 15ns/250ns
Switching Energy: 2.5mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+2300.98 грн
10+2043.28 грн
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IXBT16N170AHV IXBT16N170AHV IXYS littelfuse-discrete-igbts-ixb-16n170ahv-datasheet?assetguid=b3252f19-7d0e-4201-bbe6-5bf7c9acb58a Description: IGBT 1700V 16A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 15ns/250ns
Switching Energy: 2.5mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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IXDA20N120AS-TUB IXYS littelfuse_discrete_igbts_npt_ixda20n120as_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: NPT
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3.1mJ (on), 2.4mJ (off)
Test Condition: 600V, 20A, 82Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 200 W
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IXFA12N65X2 IXFA12N65X2 IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Description: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 213 шт:
термін постачання 21-31 дні (днів)
1+381.96 грн
50+191.84 грн
100+174.87 грн
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IXFH150N25X3HV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_150n25x3_datasheet.pdf.pdf Description: MOSFET N-CH
Packaging: Tube
Vgs (Max): ±20V
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IXFH60N65X2-4 IXFH60N65X2-4 IXYS littelfuse-discrete-mosfets-ixfh60n65x2-4-datasheet?assetguid=73c34020-27de-40d3-8db0-a4119231366f Description: MOSFET N-CH 650V 60A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+1043.93 грн
30+613.94 грн
120+528.20 грн
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IXFN50N120SIC IXFN50N120SIC IXYS media?resourcetype=datasheets&itemid=33f7d771-ce0f-41aa-bfb2-afd78da82db4&filename=Littelfuse-Power-Semiconductors-IXFN50N120SiC-Datasheet Description: SICFET N-CH 1200V 47A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V
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IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Description: SICFET N-CH 1200V 48A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+5630.84 грн
10+4650.36 грн
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IXFP12N65X2 IXFP12N65X2 IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
1+365.25 грн
50+182.98 грн
100+166.64 грн
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IXFP22N65X2M IXFP22N65X2M IXYS littelfuse-discrete-mosfets-ixfp22n65x2m-datasheet?assetguid=1846557d-8386-447c-a978-b7259fcbc471 Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
на замовлення 776 шт:
термін постачання 21-31 дні (днів)
1+426.26 грн
50+216.57 грн
100+197.83 грн
500+154.87 грн
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IXFP34N65X2M IXFP34N65X2M IXYS littelfuse-discrete-mosfets-ixfp34n65x2m-datasheet?assetguid=3414df11-8c70-4e14-bf5d-9194b3534837 Description: MOSFET N-CH 650V 34A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+623.51 грн
50+328.61 грн
100+302.40 грн
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IXFP8N65X2 IXFP8N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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IXFT60N65X2HV IXFT60N65X2HV IXYS littelfuse-discrete-mosfets-ixft60n65x2hv-datasheet?assetguid=3485acae-ba87-438d-bfcb-dacb7ee73cf2 Description: MOSFET N-CH 650V 60A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
1+1023.87 грн
30+601.04 грн
120+516.74 грн
510+473.53 грн
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IXGA36N60A3 IXGA36N60A3 IXYS littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e Description: IGBT PT 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
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IXGH28N60A3 IXYS littelfuse_discrete_igbts_pt_ixg_28n60a3_datasheet.pdf.pdf Description: IGBT
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IXGP28N60A3 IXGP28N60A3 IXYS littelfuse-discrete-igbts-ixg-28n60a3-datasheet?assetguid=b2d57b78-f7c4-4e9b-a939-985407cd8e95 Description: IGBT PT 600V 75A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
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IXGP36N60A3 IXGP36N60A3 IXYS littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e Description: IGBT PT 600V TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
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IXTA24N65X2 IXTA24N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 24A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
1+462.20 грн
50+236.69 грн
100+216.58 грн
500+182.00 грн
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IXTA380N036T4-7 IXTA380N036T4-7 IXYS littelfuse-discrete-mosfets-ixta380n036t4-7-datasheet?assetguid=04797cbd-9371-4764-a893-7e7a8a8aadea Description: MOSFET N-CH 36V 380A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 36 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
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IXTH24N65X2 IXTH24N65X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 650V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
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IXTK240N075L2 IXTK240N075L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_240n075_datasheet.pdf.pdf Description: MOSFET N-CH 75V 240A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXTP230N04T4 IXTP230N04T4 IXYS Description: MOSFET N-CH 40V 230A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
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IXTP230N04T4M IXTP230N04T4M IXYS Description: MOSFET N-CH 40V 230A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
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IXTP24N65X2 IXTP24N65X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
на замовлення 1055 шт:
термін постачання 21-31 дні (днів)
1+489.78 грн
50+252.03 грн
100+230.85 грн
500+181.83 грн
1000+179.70 грн
В кошику  од. на суму  грн.
IXTP24N65X2M IXTP24N65X2M IXYS ixty2n65x2.pdf Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
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IXTP34N65X2 IXTP34N65X2 IXYS ixty2n65x2.pdf Description: MOSFET N-CH 650V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 158 шт:
термін постачання 21-31 дні (днів)
1+576.71 грн
50+301.64 грн
100+277.17 грн
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IXXA50N60B3 IXXA50N60B3 IXYS media?resourcetype=datasheets&itemid=0584ED69-861C-477C-9ED3-244C01C8D170&filename=Littelfuse-Discrete-IGBTs-XPT-IXX-50N60B3-Datasheet.PDF Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
300+409.22 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXXH40N65B4D1 IXXH40N65B4D1 IXYS media?resourcetype=datasheets&itemid=E69E8492-50FD-4E2A-9792-1F83AC819517&filename=Littelfuse-Discrete-IGBTs-XPT-IXXH40N65B4D1-Datasheet.PDF Description: IGBT 650V 115A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/115ns
Switching Energy: 1.4mJ (on), 800µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 455 W
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IXXP12N65B4D1 IXXP12N65B4D1 IXYS littelfuse-discrete-igbts-ixxp12n65b4d1-datasheet?assetguid=77f74189-aa1a-463a-87c8-3ea583a41ea7 Description: IGBT 650V 38A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 13ns/158ns
Switching Energy: 440µJ (on), 220µJ (off)
Test Condition: 400V, 12A, 20Ohm, 15V
Gate Charge: 34 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 160 W
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IXXP50N60B3 IXXP50N60B3 IXYS media?resourcetype=datasheets&itemid=0584ED69-861C-477C-9ED3-244C01C8D170&filename=Littelfuse-Discrete-IGBTs-XPT-IXX-50N60B3-Datasheet.PDF Description: IGBT 600V 120A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXQ30N60B3M IXXQ30N60B3M IXYS littelfusediscreteigbtsxptixxq30n60b3mdatashe.pdf Description: IGBT 600V 33A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/150ns
Switching Energy: 550µJ (on), 800µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 90 W
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IXYA20N120C3HV IXYA20N120C3HV IXYS littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe Description: IGBT 1200V 40A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
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IXYA20N65B3 IXYA20N65B3 IXYS littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 700µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
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IXYA20N65C3 IXYA20N65C3 IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Description: IGBT 650V 20A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
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IXYA20N65C3D1 IXYA20N65C3D1 IXYS media?resourcetype=datasheets&itemid=240AF429-77F9-404E-8BCC-BC19E7D8DE31&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-20N65C3D1-Datasheet.PDF Description: IGBT 650V 50A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
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IXYH75N120B4 IXYS Description: IGBT 1200V 240A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 66 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 22ns/182ns
Switching Energy: 4.5mJ (on), 2.7mJ (off)
Test Condition: 600V, 50A, 3Ohm, 15V
Gate Charge: 157 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 1150 W
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IXYK100N65B3D1 IXYK100N65B3D1 IXYS littelfuse_discrete_igbts_xpt_ixy_100n65b3d1_datasheet.pdf.pdf Description: IGBT 650V 225A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: TO-264
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 2mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
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IXYN150N60B3 IXYN150N60B3 IXYS DS100548BIXYN150N60B3.pdf Description: IGBT 600V 250A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS media?resourcetype=datasheets&itemid=E2B2305A-9E89-4C80-8C55-A8326724C428&filename=Littelfuse-Discrete-IGBTs-XPT-IXYN75N65C3D1-Datasheet.PDF Description: IGBT 650V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 600 W
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IXYP10N65C3D1M IXYP10N65C3D1M IXYS littelfuse-discrete-igbts-ixyp10n65c3d1m-datasheet?assetguid=2cc6910c-4476-449b-a3db-8b1776468953 Description: IGBT 650V 15A TO220 ISOLATED TAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Supplier Device Package: TO-220 Isolated Tab
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 53 W
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IXYQ40N65C3D1 IXYQ40N65C3D1 IXYS littelfuse_discrete_igbts_xpt_ixy_40n65c3d1_datasheet.pdf.pdf Description: IGBT
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IXYR100N65A3V1 IXYS Description: IGBT
Packaging: Tube
Part Status: Active
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IXYT20N120C3D1HV IXYT20N120C3D1HV IXYS DS100514BIXYT20N120C3D1HV.pdf Description: IGBT 1200V 36A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
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IXYT30N450HV IXYT30N450HV IXYS littelfuse-discrete-igbts-ixy-30n450hv-datasheet?assetguid=8177b3a8-4830-4a30-aa21-82b58521b532 Description: IGBT 4500V 60A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
1+3770.33 грн
30+2623.23 грн
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IXYX120N120B3 IXYX120N120B3 IXYS DS100646IXYKX120N120B3.pdf Description: IGBT 1200V 320A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
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MMIX2F60N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix2f60n50p3_datasheet.pdf.pdf Description: MOSFET 2N-CH 500V 30A 24SMPD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: 24-SMPD
Part Status: Active
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ZY180LM ZY180LM IXYS lfsisa001004037012273451.PDF Description: X SERIES KEY PLUG
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
5+80.24 грн
10+48.53 грн
100+31.82 грн
500+23.12 грн
1000+20.95 грн
2000+19.13 грн
Мінімальне замовлення: 5
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ZY180RM IXYS Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
500+22.96 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
ZY200LM ZY200LM IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
на замовлення 30003 шт:
термін постачання 21-31 дні (днів)
7+55.16 грн
10+46.04 грн
100+31.86 грн
500+24.98 грн
1000+21.26 грн
2000+18.93 грн
5000+17.64 грн
10000+16.34 грн
Мінімальне замовлення: 7
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ZY200RM ZY200RM IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
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IXTY1R4N60P TRL IXTY1R4N60P TRL IXYS IXTx1R4N60P.pdf Description: MOSFET N-CH 600V 1.4A TO252
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IXTD1R4N60P 11 IXYS Description: MOSFET N-CH 600V 1.4A DIE
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T-TD1R4N60P 11 IXYS Description: MOSFET N-CH 600V
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IXFM10N90 IXYS Description: MOSFET N-CH 900V 10A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM11N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh13n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM42N20 IXYS littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca Description: MOSFET N-CH 200V 42A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IXTM10P60 IXYS Description: POWER MOSFET TO-3
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IXTM11N80 IXYS Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXTM12N100 IXYS Description: MOSFET N-CH 1000V 12A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXTM21N50L IXYS Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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IXBA16N170AHV littelfuse_discrete_igbts_bimosfet_ixb_16n170ahv_datasheet.pdf.pdf
IXBA16N170AHV
Виробник: IXYS
Description: REVERSE CONDUCTING IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 15ns/250ns
Switching Energy: 2.5mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2300.98 грн
10+2043.28 грн
В кошику  од. на суму  грн.
IXBT16N170AHV littelfuse-discrete-igbts-ixb-16n170ahv-datasheet?assetguid=b3252f19-7d0e-4201-bbe6-5bf7c9acb58a
IXBT16N170AHV
Виробник: IXYS
Description: IGBT 1700V 16A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 15ns/250ns
Switching Energy: 2.5mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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IXDA20N120AS-TUB littelfuse_discrete_igbts_npt_ixda20n120as_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: NPT
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3.1mJ (on), 2.4mJ (off)
Test Condition: 600V, 20A, 82Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 200 W
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IXFA12N65X2 littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFA12N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 213 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+381.96 грн
50+191.84 грн
100+174.87 грн
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IXFH150N25X3HV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_150n25x3_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH
Packaging: Tube
Vgs (Max): ±20V
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IXFH60N65X2-4 littelfuse-discrete-mosfets-ixfh60n65x2-4-datasheet?assetguid=73c34020-27de-40d3-8db0-a4119231366f
IXFH60N65X2-4
Виробник: IXYS
Description: MOSFET N-CH 650V 60A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1043.93 грн
30+613.94 грн
120+528.20 грн
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IXFN50N120SIC media?resourcetype=datasheets&itemid=33f7d771-ce0f-41aa-bfb2-afd78da82db4&filename=Littelfuse-Power-Semiconductors-IXFN50N120SiC-Datasheet
IXFN50N120SIC
Виробник: IXYS
Description: SICFET N-CH 1200V 47A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V
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IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Виробник: IXYS
Description: SICFET N-CH 1200V 48A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5630.84 грн
10+4650.36 грн
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IXFP12N65X2 littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFP12N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+365.25 грн
50+182.98 грн
100+166.64 грн
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IXFP22N65X2M littelfuse-discrete-mosfets-ixfp22n65x2m-datasheet?assetguid=1846557d-8386-447c-a978-b7259fcbc471
IXFP22N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
на замовлення 776 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+426.26 грн
50+216.57 грн
100+197.83 грн
500+154.87 грн
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IXFP34N65X2M littelfuse-discrete-mosfets-ixfp34n65x2m-datasheet?assetguid=3414df11-8c70-4e14-bf5d-9194b3534837
IXFP34N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 34A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+623.51 грн
50+328.61 грн
100+302.40 грн
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IXFP8N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n65x2_datasheet.pdf.pdf
IXFP8N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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IXFT60N65X2HV littelfuse-discrete-mosfets-ixft60n65x2hv-datasheet?assetguid=3485acae-ba87-438d-bfcb-dacb7ee73cf2
IXFT60N65X2HV
Виробник: IXYS
Description: MOSFET N-CH 650V 60A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1023.87 грн
30+601.04 грн
120+516.74 грн
510+473.53 грн
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IXGA36N60A3 littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e
IXGA36N60A3
Виробник: IXYS
Description: IGBT PT 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
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IXGH28N60A3 littelfuse_discrete_igbts_pt_ixg_28n60a3_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT
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IXGP28N60A3 littelfuse-discrete-igbts-ixg-28n60a3-datasheet?assetguid=b2d57b78-f7c4-4e9b-a939-985407cd8e95
IXGP28N60A3
Виробник: IXYS
Description: IGBT PT 600V 75A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
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IXGP36N60A3 littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e
IXGP36N60A3
Виробник: IXYS
Description: IGBT PT 600V TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
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IXTA24N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTA24N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 24A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+462.20 грн
50+236.69 грн
100+216.58 грн
500+182.00 грн
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IXTA380N036T4-7 littelfuse-discrete-mosfets-ixta380n036t4-7-datasheet?assetguid=04797cbd-9371-4764-a893-7e7a8a8aadea
IXTA380N036T4-7
Виробник: IXYS
Description: MOSFET N-CH 36V 380A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 36 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
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IXTH24N65X2 ixty2n65x2.pdf
IXTH24N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
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IXTK240N075L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_240n075_datasheet.pdf.pdf
IXTK240N075L2
Виробник: IXYS
Description: MOSFET N-CH 75V 240A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXTP230N04T4
IXTP230N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 230A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
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IXTP230N04T4M
IXTP230N04T4M
Виробник: IXYS
Description: MOSFET N-CH 40V 230A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
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IXTP24N65X2 ixty2n65x2.pdf
IXTP24N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
на замовлення 1055 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+489.78 грн
50+252.03 грн
100+230.85 грн
500+181.83 грн
1000+179.70 грн
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IXTP24N65X2M ixty2n65x2.pdf
IXTP24N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
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IXTP34N65X2 ixty2n65x2.pdf
IXTP34N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 158 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+576.71 грн
50+301.64 грн
100+277.17 грн
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IXXA50N60B3 media?resourcetype=datasheets&itemid=0584ED69-861C-477C-9ED3-244C01C8D170&filename=Littelfuse-Discrete-IGBTs-XPT-IXX-50N60B3-Datasheet.PDF
IXXA50N60B3
Виробник: IXYS
Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+409.22 грн
Мінімальне замовлення: 300
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IXXH40N65B4D1 media?resourcetype=datasheets&itemid=E69E8492-50FD-4E2A-9792-1F83AC819517&filename=Littelfuse-Discrete-IGBTs-XPT-IXXH40N65B4D1-Datasheet.PDF
IXXH40N65B4D1
Виробник: IXYS
Description: IGBT 650V 115A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/115ns
Switching Energy: 1.4mJ (on), 800µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 455 W
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IXXP12N65B4D1 littelfuse-discrete-igbts-ixxp12n65b4d1-datasheet?assetguid=77f74189-aa1a-463a-87c8-3ea583a41ea7
IXXP12N65B4D1
Виробник: IXYS
Description: IGBT 650V 38A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 13ns/158ns
Switching Energy: 440µJ (on), 220µJ (off)
Test Condition: 400V, 12A, 20Ohm, 15V
Gate Charge: 34 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 160 W
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IXXP50N60B3 media?resourcetype=datasheets&itemid=0584ED69-861C-477C-9ED3-244C01C8D170&filename=Littelfuse-Discrete-IGBTs-XPT-IXX-50N60B3-Datasheet.PDF
IXXP50N60B3
Виробник: IXYS
Description: IGBT 600V 120A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXQ30N60B3M littelfusediscreteigbtsxptixxq30n60b3mdatashe.pdf
IXXQ30N60B3M
Виробник: IXYS
Description: IGBT 600V 33A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/150ns
Switching Energy: 550µJ (on), 800µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 90 W
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IXYA20N120C3HV littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe
IXYA20N120C3HV
Виробник: IXYS
Description: IGBT 1200V 40A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
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IXYA20N65B3 littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf.pdf
IXYA20N65B3
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 700µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
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IXYA20N65C3 littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
IXYA20N65C3
Виробник: IXYS
Description: IGBT 650V 20A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
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IXYA20N65C3D1 media?resourcetype=datasheets&itemid=240AF429-77F9-404E-8BCC-BC19E7D8DE31&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-20N65C3D1-Datasheet.PDF
IXYA20N65C3D1
Виробник: IXYS
Description: IGBT 650V 50A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
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IXYH75N120B4
Виробник: IXYS
Description: IGBT 1200V 240A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 66 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 22ns/182ns
Switching Energy: 4.5mJ (on), 2.7mJ (off)
Test Condition: 600V, 50A, 3Ohm, 15V
Gate Charge: 157 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 1150 W
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IXYK100N65B3D1 littelfuse_discrete_igbts_xpt_ixy_100n65b3d1_datasheet.pdf.pdf
IXYK100N65B3D1
Виробник: IXYS
Description: IGBT 650V 225A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: TO-264
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 2mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
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IXYN150N60B3 DS100548BIXYN150N60B3.pdf
IXYN150N60B3
Виробник: IXYS
Description: IGBT 600V 250A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
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IXYN75N65C3D1 media?resourcetype=datasheets&itemid=E2B2305A-9E89-4C80-8C55-A8326724C428&filename=Littelfuse-Discrete-IGBTs-XPT-IXYN75N65C3D1-Datasheet.PDF
IXYN75N65C3D1
Виробник: IXYS
Description: IGBT 650V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 600 W
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IXYP10N65C3D1M littelfuse-discrete-igbts-ixyp10n65c3d1m-datasheet?assetguid=2cc6910c-4476-449b-a3db-8b1776468953
IXYP10N65C3D1M
Виробник: IXYS
Description: IGBT 650V 15A TO220 ISOLATED TAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Supplier Device Package: TO-220 Isolated Tab
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 53 W
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IXYQ40N65C3D1 littelfuse_discrete_igbts_xpt_ixy_40n65c3d1_datasheet.pdf.pdf
IXYQ40N65C3D1
Виробник: IXYS
Description: IGBT
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IXYR100N65A3V1
Виробник: IXYS
Description: IGBT
Packaging: Tube
Part Status: Active
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IXYT20N120C3D1HV DS100514BIXYT20N120C3D1HV.pdf
IXYT20N120C3D1HV
Виробник: IXYS
Description: IGBT 1200V 36A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
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IXYT30N450HV littelfuse-discrete-igbts-ixy-30n450hv-datasheet?assetguid=8177b3a8-4830-4a30-aa21-82b58521b532
IXYT30N450HV
Виробник: IXYS
Description: IGBT 4500V 60A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3770.33 грн
30+2623.23 грн
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IXYX120N120B3 DS100646IXYKX120N120B3.pdf
IXYX120N120B3
Виробник: IXYS
Description: IGBT 1200V 320A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
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MMIX2F60N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix2f60n50p3_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET 2N-CH 500V 30A 24SMPD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: 24-SMPD
Part Status: Active
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ZY180LM lfsisa001004037012273451.PDF
ZY180LM
Виробник: IXYS
Description: X SERIES KEY PLUG
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+80.24 грн
10+48.53 грн
100+31.82 грн
500+23.12 грн
1000+20.95 грн
2000+19.13 грн
Мінімальне замовлення: 5
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ZY180RM
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+22.96 грн
Мінімальне замовлення: 500
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ZY200LM littelfuse_power_semiconductors_product_catalog.pdf.pdf
ZY200LM
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
на замовлення 30003 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+55.16 грн
10+46.04 грн
100+31.86 грн
500+24.98 грн
1000+21.26 грн
2000+18.93 грн
5000+17.64 грн
10000+16.34 грн
Мінімальне замовлення: 7
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ZY200RM littelfuse_power_semiconductors_product_catalog.pdf.pdf
ZY200RM
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE
Packaging: Box
Type: Keyed Gate Cathode Twin Plugs
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
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IXTY1R4N60P TRL IXTx1R4N60P.pdf
IXTY1R4N60P TRL
Виробник: IXYS
Description: MOSFET N-CH 600V 1.4A TO252
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IXTD1R4N60P 11
Виробник: IXYS
Description: MOSFET N-CH 600V 1.4A DIE
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T-TD1R4N60P 11
Виробник: IXYS
Description: MOSFET N-CH 600V
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IXFM10N90
Виробник: IXYS
Description: MOSFET N-CH 900V 10A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM11N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh13n80_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM42N20 littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca
Виробник: IXYS
Description: MOSFET N-CH 200V 42A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IXTM10P60
Виробник: IXYS
Description: POWER MOSFET TO-3
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IXTM11N80
Виробник: IXYS
Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXTM12N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXTM21N50L
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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