| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BD13916STU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: tube |
на замовлення 1835 шт: термін постачання 14-30 дні (днів) |
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BD139G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7000-D26Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7000-D74Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7000-D75Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape |
на замовлення 1823 шт: термін постачання 14-30 дні (днів) |
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2N7000BU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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2N7000TA | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack |
на замовлення 517 шт: термін постачання 14-30 дні (днів) |
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BS170 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Technology: DMOS |
на замовлення 9223 шт: термін постачання 14-30 дні (днів) |
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BS170-D75Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 2890 шт: термін постачання 14-30 дні (днів) |
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BS170-D26Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 1414 шт: термін постачання 14-30 дні (днів) |
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BS170-D27Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.83W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement Technology: DMOS |
на замовлення 3376 шт: термін постачання 14-30 дні (днів) |
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BC807-40LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC807-40LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BD140G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225 Kind of package: bulk Case: TO225 Collector current: 1.5A Mounting: THT Collector-emitter voltage: 80V Power dissipation: 12.5W Polarisation: bipolar Type of transistor: PNP Current gain: 40...250 |
на замовлення 431 шт: термін постачання 14-30 дні (днів) |
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MMBD1401 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.1µA Case: SOT23 Capacitance: 2pF Type of diode: switching Reverse recovery time: 50ns Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 1.1V Power dissipation: 0.35W Max. off-state voltage: 200V Load current: 0.2A |
на замовлення 2314 шт: термін постачання 14-30 дні (днів) |
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MMBD1403 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Kind of package: reel; tape Semiconductor structure: double series Leakage current: 0.1µA Case: SOT23 Capacitance: 2pF Type of diode: switching Reverse recovery time: 50ns Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 1.1V Power dissipation: 0.35W Max. off-state voltage: 200V Load current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1404 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Kind of package: reel; tape Semiconductor structure: common cathode; double Leakage current: 0.1µA Case: SOT23 Capacitance: 2pF Type of diode: switching Reverse recovery time: 50ns Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 1.1V Power dissipation: 0.35W Max. off-state voltage: 200V Load current: 0.2A |
на замовлення 414 шт: термін постачання 14-30 дні (днів) |
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MMBD1404A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Kind of package: reel; tape Semiconductor structure: common cathode; double Leakage current: 0.1µA Case: SOT23 Capacitance: 2pF Type of diode: switching Reverse recovery time: 50ns Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 1.25V Power dissipation: 0.35W Max. off-state voltage: 175V Load current: 0.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1405 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 0.1µA Case: SOT23 Capacitance: 2pF Type of diode: switching Reverse recovery time: 50ns Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 1.1V Power dissipation: 0.35W Max. off-state voltage: 200V Load current: 0.2A |
на замовлення 5718 шт: термін постачання 14-30 дні (днів) |
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2N3904BU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 8602 шт: термін постачання 14-30 дні (днів) |
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2N3904TFR | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
на замовлення 1138 шт: термін постачання 14-30 дні (днів) |
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BSS138L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 700 шт: термін постачання 14-30 дні (днів) |
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BSS138LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 34411 шт: термін постачання 14-30 дні (днів) |
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BSS138LT3G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSS138W | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.21A Power dissipation: 0.34W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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LM2904DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA |
на замовлення 7201 шт: термін постачання 14-30 дні (днів) |
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FGH40N60SFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 171 шт: термін постачання 14-30 дні (днів) |
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FGH40N60SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 120A Gate-emitter voltage: ±20V Gate charge: 180nC |
на замовлення 288 шт: термін постачання 14-30 дні (днів) |
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FGH40N60UFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 174 шт: термін постачання 14-30 дні (днів) |
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BCP53-10T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 339 шт: термін постачання 14-30 дні (днів) |
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BCP53-16T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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BC856BDW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2996 шт: термін постачання 14-30 дні (днів) |
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BC856BLT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC856BLT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BC856BM3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.265W Case: SOT723 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1800 шт: термін постачання 14-30 дні (днів) |
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MMBT2222ALT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Mounting: SMD Frequency: 300MHz Current gain: 100...300 Kind of package: reel; tape |
на замовлення 79773 шт: термін постачання 14-30 дні (днів) |
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MMBT2222ALT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Mounting: SMD Frequency: 300MHz Current gain: 100...300 Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBT2222ATT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC75; SOT416 Mounting: SMD Frequency: 300MHz Current gain: 100 Kind of package: reel; tape |
на замовлення 2188 шт: термін постачання 14-30 дні (днів) |
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MMBT2222AWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Mounting: SMD Frequency: 300MHz Current gain: 100...300 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBT2222AWT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N5408RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; reel,tape; Ir: 50uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: reel; tape Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 214 шт: термін постачання 14-30 дні (днів) |
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FOD3120SD | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5kV Case: Gull wing 8 Slew rate: 35kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FOD3120SDV | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5kV Case: Gull wing 8 Slew rate: 35kV/μs Turn-on time: 60ns Turn-off time: 60ns |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74AC132DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Case: SO14 Mounting: SMD Kind of package: tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Kind of input: with Schmitt trigger Operating temperature: -40...85°C Number of inputs: 2 Supply voltage: 2...6V DC Family: AC Technology: CMOS |
на замовлення 618 шт: термін постачання 14-30 дні (днів) |
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BCP56-16T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
на замовлення 9147 шт: термін постачання 14-30 дні (днів) |
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BCP56-16T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SBCP56-16T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7002K | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.27A Pulsed drain current: 5A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 706 шт: термін постачання 14-30 дні (днів) |
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2N7002KT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.38A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
1N4742A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 12V; DO41; single diode; bulk; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N47xxA |
на замовлення 673 шт: термін постачання 14-30 дні (днів) |
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1N4742ATR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 12V; DO41; single diode; reel,tape; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N47xxA |
на замовлення 622 шт: термін постачання 14-30 дні (днів) |
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LM317TG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3 Output voltage: 1.2...37V Input voltage: 3...40V Output current: 1.5A Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Heatsink thickness: 0.51...0.61mm Kind of package: tube Case: TO220-3 Number of channels: 1 Mounting: THT Kind of voltage regulator: adjustable; linear Manufacturer series: LM317 |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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| CAT24C16HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
|
BC847CDW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BC847CDXV6T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 296 шт: термін постачання 14-30 дні (днів) |
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BC847CLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 13318 шт: термін постачання 14-30 дні (днів) |
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BC847CLT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
BC857CDW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BC857CLT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BC817-25LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| BD13916STU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
на замовлення 1835 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.33 грн |
| 13+ | 34.40 грн |
| 25+ | 30.16 грн |
| 60+ | 26.67 грн |
| 120+ | 24.26 грн |
| 540+ | 19.69 грн |
| 1020+ | 18.70 грн |
| BD139G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N7000-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 2N7000-D74Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
| 2N7000-D75Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
на замовлення 1823 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 21+ | 20.11 грн |
| 100+ | 11.97 грн |
| 500+ | 8.73 грн |
| 1000+ | 7.81 грн |
| 2N7000BU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 2N7000TA |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
на замовлення 517 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.80 грн |
| 17+ | 25.43 грн |
| 20+ | 21.69 грн |
| 100+ | 12.55 грн |
| 500+ | 8.97 грн |
| BS170 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
на замовлення 9223 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.53 грн |
| 19+ | 22.60 грн |
| 22+ | 19.36 грн |
| 100+ | 10.72 грн |
| 250+ | 8.81 грн |
| 500+ | 7.73 грн |
| 1000+ | 6.81 грн |
| 3000+ | 5.82 грн |
| BS170-D75Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.00 грн |
| 31+ | 13.71 грн |
| 100+ | 10.55 грн |
| 500+ | 7.15 грн |
| BS170-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 1414 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.80 грн |
| 18+ | 23.35 грн |
| 25+ | 19.28 грн |
| 50+ | 16.70 грн |
| 100+ | 14.38 грн |
| 500+ | 10.30 грн |
| 1000+ | 9.14 грн |
| BS170-D27Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
на замовлення 3376 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.32 грн |
| 22+ | 19.20 грн |
| 29+ | 14.62 грн |
| 50+ | 11.97 грн |
| 100+ | 9.97 грн |
| 250+ | 8.14 грн |
| 500+ | 7.23 грн |
| 1000+ | 6.56 грн |
| 2000+ | 6.15 грн |
| BC807-40LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| BC807-40LT3G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
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од. на суму грн.
| BD140G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Kind of package: bulk
Case: TO225
Collector current: 1.5A
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 40...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Kind of package: bulk
Case: TO225
Collector current: 1.5A
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 40...250
на замовлення 431 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.75 грн |
| 10+ | 57.50 грн |
| 50+ | 44.21 грн |
| 100+ | 39.72 грн |
| 250+ | 34.57 грн |
| MMBD1401 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
на замовлення 2314 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.05 грн |
| 73+ | 5.73 грн |
| 78+ | 5.37 грн |
| 100+ | 5.23 грн |
| 250+ | 5.02 грн |
| 500+ | 4.59 грн |
| 1000+ | 3.96 грн |
| MMBD1403 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: double series
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: double series
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
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| MMBD1404 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 36+ | 11.63 грн |
| 41+ | 10.14 грн |
| 100+ | 6.47 грн |
| MMBD1404A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Max. off-state voltage: 175V
Load current: 0.6A
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Max. off-state voltage: 175V
Load current: 0.6A
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В кошику
од. на суму грн.
| MMBD1405 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
на замовлення 5718 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.79 грн |
| 30+ | 13.96 грн |
| 35+ | 12.22 грн |
| 50+ | 8.84 грн |
| 100+ | 7.79 грн |
| 500+ | 5.91 грн |
| 1000+ | 5.14 грн |
| 3000+ | 4.36 грн |
| 2N3904BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 8602 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.90 грн |
| 34+ | 12.46 грн |
| 40+ | 10.64 грн |
| 100+ | 6.18 грн |
| 500+ | 4.38 грн |
| 1000+ | 3.84 грн |
| 2000+ | 3.41 грн |
| 5000+ | 3.04 грн |
| 2N3904TFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 1138 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 74+ | 5.65 грн |
| 80+ | 5.24 грн |
| 95+ | 4.40 грн |
| 102+ | 4.10 грн |
| 200+ | 3.95 грн |
| 500+ | 3.65 грн |
| 1000+ | 3.43 грн |
| BSS138L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 700 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.63 грн |
| 54+ | 7.81 грн |
| 70+ | 6.00 грн |
| 100+ | 5.28 грн |
| 250+ | 4.43 грн |
| 500+ | 3.85 грн |
| BSS138LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 34411 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.69 грн |
| 33+ | 12.96 грн |
| 41+ | 10.37 грн |
| 50+ | 8.71 грн |
| 100+ | 7.30 грн |
| 500+ | 5.02 грн |
| 1000+ | 4.35 грн |
| 3000+ | 3.58 грн |
| 6000+ | 3.22 грн |
| BSS138LT3G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| BSS138W |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.48 грн |
| 22+ | 19.11 грн |
| LM2904DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
на замовлення 7201 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.42 грн |
| 40+ | 10.47 грн |
| 46+ | 9.22 грн |
| 49+ | 8.64 грн |
| 53+ | 7.89 грн |
| 100+ | 6.40 грн |
| 250+ | 5.90 грн |
| 500+ | 5.57 грн |
| 1000+ | 5.32 грн |
| FGH40N60SFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 171 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 331.11 грн |
| 3+ | 274.22 грн |
| 10+ | 222.70 грн |
| 30+ | 186.14 грн |
| FGH40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Gate charge: 180nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Gate charge: 180nC
на замовлення 288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 341.85 грн |
| 3+ | 270.06 грн |
| 10+ | 227.68 грн |
| 30+ | 199.43 грн |
| FGH40N60UFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.68 грн |
| 10+ | 161.21 грн |
| 30+ | 138.77 грн |
| 120+ | 137.94 грн |
| BCP53-10T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 339 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.85 грн |
| 16+ | 26.01 грн |
| 50+ | 19.86 грн |
| 100+ | 17.53 грн |
| 200+ | 15.46 грн |
| BCP53-16T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.32 грн |
| 12+ | 35.23 грн |
| 14+ | 30.91 грн |
| BC856BDW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2996 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 59+ | 7.06 грн |
| 87+ | 4.80 грн |
| 104+ | 4.03 грн |
| 500+ | 2.82 грн |
| 1000+ | 2.48 грн |
| 1500+ | 2.33 грн |
| BC856BLT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| BC856BLT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| BC856BM3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.74 грн |
| 48+ | 8.81 грн |
| 54+ | 7.73 грн |
| 100+ | 4.50 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.65 грн |
| MMBT2222ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
на замовлення 79773 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 69+ | 6.07 грн |
| 101+ | 4.14 грн |
| 119+ | 3.51 грн |
| 500+ | 2.41 грн |
| 1000+ | 2.06 грн |
| 3000+ | 1.62 грн |
| 6000+ | 1.40 грн |
| 9000+ | 1.30 грн |
| MMBT2222ALT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MMBT2222ATT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Mounting: SMD
Frequency: 300MHz
Current gain: 100
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Mounting: SMD
Frequency: 300MHz
Current gain: 100
Kind of package: reel; tape
на замовлення 2188 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 87+ | 4.82 грн |
| 111+ | 3.77 грн |
| 121+ | 3.44 грн |
| 500+ | 2.77 грн |
| 1000+ | 2.38 грн |
| 1500+ | 2.17 грн |
| MMBT2222AWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
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од. на суму грн.
| MMBT2222AWT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 1N5408RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; reel,tape; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: reel; tape
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; reel,tape; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: reel; tape
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.48 грн |
| 32+ | 13.30 грн |
| 50+ | 10.39 грн |
| 100+ | 9.39 грн |
| 200+ | 8.48 грн |
| FOD3120SD |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
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| FOD3120SDV |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MC74AC132DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Case: SO14
Mounting: SMD
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 2...6V DC
Family: AC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Case: SO14
Mounting: SMD
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 2...6V DC
Family: AC
Technology: CMOS
на замовлення 618 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.53 грн |
| 21+ | 20.44 грн |
| 25+ | 19.11 грн |
| 55+ | 17.95 грн |
| 110+ | 16.79 грн |
| 275+ | 15.54 грн |
| 550+ | 15.12 грн |
| BCP56-16T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 9147 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.06 грн |
| 17+ | 24.68 грн |
| 50+ | 19.44 грн |
| 100+ | 17.45 грн |
| 200+ | 15.62 грн |
| 500+ | 13.13 грн |
| 1000+ | 11.05 грн |
| 2000+ | 9.06 грн |
| 3000+ | 7.98 грн |
| BCP56-16T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
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В кошику
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| SBCP56-16T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
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| 2N7002K |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 706 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.48 грн |
| 28+ | 15.29 грн |
| 33+ | 12.63 грн |
| 57+ | 7.36 грн |
| 100+ | 5.94 грн |
| 500+ | 4.21 грн |
| 2N7002KT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1N4742A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
на замовлення 673 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.26 грн |
| 136+ | 3.07 грн |
| 160+ | 2.60 грн |
| 250+ | 2.59 грн |
| 1N4742ATR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N47xxA
на замовлення 622 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.63 грн |
| 54+ | 7.81 грн |
| 61+ | 6.81 грн |
| 91+ | 4.57 грн |
| 109+ | 3.82 грн |
| 500+ | 3.16 грн |
| LM317TG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Output voltage: 1.2...37V
Input voltage: 3...40V
Output current: 1.5A
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
Case: TO220-3
Number of channels: 1
Mounting: THT
Kind of voltage regulator: adjustable; linear
Manufacturer series: LM317
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Output voltage: 1.2...37V
Input voltage: 3...40V
Output current: 1.5A
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
Case: TO220-3
Number of channels: 1
Mounting: THT
Kind of voltage regulator: adjustable; linear
Manufacturer series: LM317
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.64 грн |
| 14+ | 31.41 грн |
| 25+ | 29.08 грн |
| 50+ | 27.59 грн |
| 100+ | 26.34 грн |
| CAT24C16HU4I-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BC847CDW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
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од. на суму грн.
| BC847CDXV6T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.21 грн |
| 44+ | 9.47 грн |
| 62+ | 6.71 грн |
| 100+ | 5.84 грн |
| 250+ | 4.90 грн |
| BC847CLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 13318 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 93+ | 4.49 грн |
| 129+ | 3.22 грн |
| 149+ | 2.79 грн |
| 500+ | 1.99 грн |
| 1000+ | 1.72 грн |
| 1500+ | 1.57 грн |
| 3000+ | 1.35 грн |
| 6000+ | 1.14 грн |
| BC847CLT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BC857CDW1T1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| BC857CLT1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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од. на суму грн.
| BC817-25LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
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