| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SZMMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RS1J | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Case: DO214AC; SMA Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Power dissipation: 1.19W Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
на замовлення 486 шт: термін постачання 14-30 дні (днів) |
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| RS1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Case: SOD123F Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 0.8A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1JFP | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Mounting: SMD Case: SOD123HE Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 300ns Load current: 1.2A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVHPRS1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Max. forward impulse current: 30A Application: automotive industry Case: SOD123F Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 0.8A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| KSD880YTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 30W Case: TO220AB Current gain: 100...200 Mounting: THT Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FGH40T120SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 0.37µC Gate-emitter voltage: ±25V Collector current: 40A Pulsed collector current: 160A Power dissipation: 277W Collector-emitter voltage: 1.2kV |
на замовлення 175 шт: термін постачання 14-30 дні (днів) |
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FGY60T120SQDN | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 60A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 240A Mounting: THT Gate charge: 311nC Kind of package: tube |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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FGY75T120SQDN | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 395W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 399nC Kind of package: tube |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
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FGH40T120SMD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 0.37µC Gate-emitter voltage: ±25V Collector current: 40A Pulsed collector current: 160A Power dissipation: 277W Collector-emitter voltage: 1.2kV |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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FQPF3N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP Kind of package: tube Case: TO220FP Kind of channel: enhancement Mounting: THT Technology: QFET® Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 16.5nC Drain current: 1.9A On-state resistance: 4.8Ω Gate-source voltage: ±30V Power dissipation: 39W Drain-source voltage: 800V |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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FQP3N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 107W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NSVBC847BTT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14027BDR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; JK flip-flop; Ch: 2; SMD; SO16 Operating temperature: -40...85°C Mounting: SMD Case: SO16 Supply voltage: 3...18V DC Kind of integrated circuit: JK flip-flop Type of integrated circuit: digital Number of channels: 2 Trigger: negative-edge-triggered |
на замовлення 2173 шт: термін постачання 14-30 дні (днів) |
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| NVLJWS022N06CLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6 Case: WDFNW6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.6nC On-state resistance: 21mΩ Power dissipation: 14W Drain current: 25A Pulsed drain current: 90A Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSA1013YTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Mounting: THT Case: TO92 Formed Power dissipation: 0.9W Collector current: 1A Current gain: 160...320 Collector-emitter voltage: 160V Frequency: 50MHz Polarisation: bipolar Kind of package: Ammo Pack Type of transistor: PNP |
на замовлення 3439 шт: термін постачання 14-30 дні (днів) |
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KSA1013YBU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Mounting: THT Case: TO92 Power dissipation: 0.9W Collector current: 1A Current gain: 160...320 Collector-emitter voltage: 160V Frequency: 50MHz Polarisation: bipolar Kind of package: bulk Type of transistor: PNP |
на замовлення 5878 шт: термін постачання 14-30 дні (днів) |
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| BZX85C12-T50R | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX85C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC7918CTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900 Kind of package: tube Kind of voltage regulator: fixed; linear Mounting: THT Case: TO220AB Operating temperature: 0...125°C Output voltage: -18V Heatsink thickness: 0.508...0.61mm Output current: 1A Voltage drop: 1.3V Number of channels: 1 Tolerance: ±4% Type of integrated circuit: voltage regulator Manufacturer series: MC7900 |
на замовлення 2381 шт: термін постачання 14-30 дні (днів) |
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| BC638TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC638TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
на замовлення 1925 шт: термін постачання 14-30 дні (днів) |
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MC33079DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14 Type of integrated circuit: operational amplifier Mounting: SMT Case: SO14 Integrated circuit features: low noise Voltage supply range: ± 5...18V DC; 10...36V DC Slew rate: 7V/μs Bandwidth: 16MHz Number of channels: quad; 4 Kind of package: reel; tape Operating temperature: -40...85°C Input offset voltage: 3.5mV |
на замовлення 3508 шт: термін постачання 14-30 дні (днів) |
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MC33074DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 3mV Kind of package: reel; tape |
на замовлення 746 шт: термін постачання 14-30 дні (днів) |
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| MC33035DWR2G | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brushless motor controller Case: SO24 Output current: 0.1A Number of channels: 3 Supply voltage: 0...40V DC Mounting: SMD Operating temperature: -40...85°C Application: universal Operating voltage: 10...30V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC33074ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC33074ADTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33074DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJH11022G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
на замовлення 146 шт: термін постачання 14-30 дні (днів) |
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MJH11020G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Kind of package: tube Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 200V Polarisation: bipolar |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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MJH11021G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: PNP Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
на замовлення 173 шт: термін постачання 14-30 дні (днів) |
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74AC04SC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Family: AC Number of inputs: 1 |
на замовлення 329 шт: термін постачання 14-30 дні (днів) |
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MM74HCT74M | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered Quiescent current: 40µA |
на замовлення 114 шт: термін постачання 14-30 дні (днів) |
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| FCD380N60E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCP380N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCP380N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTD280N60S5Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 39A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCPF380N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCPF380N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAV70LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33151DG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Case: SO8 Kind of package: tube Operating temperature: -40...85°C Output current: -1.5...1.5A Kind of output: inverting Pulse fall time: 30ns Impulse rise time: 30ns Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Kind of integrated circuit: MOSFET gate driver Mounting: SMD Protection: undervoltage UVP Type of integrated circuit: driver |
на замовлення 61 шт: термін постачання 14-30 дні (днів) |
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MC33151PG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: THT Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP |
на замовлення 77 шт: термін постачання 14-30 дні (днів) |
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MC33151DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Supply voltage: 6.5...18V DC Output voltage: 0.8...11.2V Kind of package: reel; tape Protection: undervoltage UVP Kind of output: inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC34151DG | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 30ns Pulse fall time: 30ns Supply voltage: 6.5...18V DC Kind of output: inverting Output voltage: 0.8...11.2V Kind of package: tube Protection: undervoltage UVP |
на замовлення 98 шт: термін постачання 14-30 дні (днів) |
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1N5404RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO27 Mounting: THT Semiconductor structure: single diode Leakage current: 50µA Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.4kV Kind of package: reel; tape Case: DO27 Type of diode: rectifying |
на замовлення 1127 шт: термін постачання 14-30 дні (днів) |
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MOCD223M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Mounting: SMD Case: SO8 Type of optocoupler: optocoupler Kind of output: transistor Turn-on time: 8µs Turn-off time: 55µs Number of channels: 2 Collector-emitter voltage: 30V CTR@If: 500-1000%@1mA Insulation voltage: 2.5kV |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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MBRB20200CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. load current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MCT9001 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8 Case: DIP8 Mounting: THT Kind of output: transistor Type of optocoupler: optocoupler Number of channels: 2 CTR@If: 50-600%@5mA Collector-emitter voltage: 55V Insulation voltage: 5kV |
на замовлення 892 шт: термін постачання 14-30 дні (днів) |
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MCT9001SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8 Case: PDIP8 Mounting: SMD Manufacturer series: MCT9001 Kind of output: transistor Type of optocoupler: optocoupler Turn-on time: 3µs Turn-off time: 3µs Number of channels: 2 Max. off-state voltage: 5V CTR@If: 50-600%@5mA Collector-emitter voltage: 55V Insulation voltage: 5kV |
на замовлення 669 шт: термін постачання 14-30 дні (днів) |
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FQD5P20TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.34A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1103 шт: термін постачання 14-30 дні (днів) |
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MC74HC390ADR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC390ADTR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; -55÷125°C; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74ACT161DG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Technology: TTL Mounting: SMD Case: SOIC16 Operating temperature: -40...85°C Family: ACT Supply voltage: 4.5...5.5V DC Kind of package: tube Manufacturer series: ACT Number of inputs: 9 |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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74ACT240MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of integrated circuit: buffer; inverting; line driver Technology: CMOS Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA |
на замовлення 140 шт: термін постачання 14-30 дні (днів) |
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MM74HCT240MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Technology: CMOS; TTL Quiescent current: 160µA Number of channels: 2 Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74ACT157DG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube Operating temperature: -40...85°C Manufacturer series: ACT Technology: TTL Type of integrated circuit: digital Mounting: SMD Case: SOIC16 Kind of package: tube Number of channels: 4 Supply voltage: 4.5...5.5V DC Number of inputs: 4 Family: ACT Kind of integrated circuit: multiplexer |
на замовлення 237 шт: термін постачання 14-30 дні (днів) |
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| M74VHCT157ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP16; VHCT Case: TSSOP16 Mounting: SMD Manufacturer series: VHCT Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of channels: 4 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: multiplexer Family: VHCT Technology: CMOS; TTL Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74ACT157DR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Number of inputs: 4 Mounting: SMD Case: SOIC16 Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Technology: TTL Kind of package: reel; tape Manufacturer series: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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4N33M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Mounting: THT Collector-emitter voltage: 30V CTR@If: 50%@10mA Insulation voltage: 2.5kV Kind of output: Darlington Case: DIP6 Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 0.1ms Number of channels: 1 |
на замовлення 960 шт: термін постачання 14-30 дні (днів) |
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4N33SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Manufacturer series: 4N3X Mounting: SMD Collector-emitter voltage: 30V CTR@If: 500%@10mA Insulation voltage: 4.17kV Kind of output: Darlington Case: PDIP6 Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 0.1ms Number of channels: 1 Max. off-state voltage: 3V |
на замовлення 543 шт: термін постачання 14-30 дні (днів) |
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4N33SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V Mounting: SMD Collector-emitter voltage: 30V Insulation voltage: 7.5kV Kind of output: Darlington Case: Gull wing 6 Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 0.1ms Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. |
| SZMMSZ5248BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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В кошику
од. на суму грн.
| RS1J |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
на замовлення 486 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.79 грн |
| 33+ | 12.95 грн |
| 41+ | 10.19 грн |
| 50+ | 8.52 грн |
| 100+ | 7.18 грн |
| 250+ | 6.76 грн |
| RS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JFP |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| NRVHPRS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| KSD880YTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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| FGH40T120SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 0.37µC
Gate-emitter voltage: ±25V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 277W
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 0.37µC
Gate-emitter voltage: ±25V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 277W
Collector-emitter voltage: 1.2kV
на замовлення 175 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 630.49 грн |
| 10+ | 504.45 грн |
| FGY60T120SQDN |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 646.68 грн |
| FGY75T120SQDN |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
на замовлення 33 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 751.91 грн |
| FGH40T120SMD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 0.37µC
Gate-emitter voltage: ±25V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 277W
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 0.37µC
Gate-emitter voltage: ±25V
Collector current: 40A
Pulsed collector current: 160A
Power dissipation: 277W
Collector-emitter voltage: 1.2kV
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 876.93 грн |
| FQPF3N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Technology: QFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 16.5nC
Drain current: 1.9A
On-state resistance: 4.8Ω
Gate-source voltage: ±30V
Power dissipation: 39W
Drain-source voltage: 800V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Technology: QFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 16.5nC
Drain current: 1.9A
On-state resistance: 4.8Ω
Gate-source voltage: ±30V
Power dissipation: 39W
Drain-source voltage: 800V
на замовлення 25 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 126.82 грн |
| FQP3N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
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| NSVBC847BTT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| MC14027BDR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
на замовлення 2173 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.98 грн |
| 16+ | 27.23 грн |
| 18+ | 24.47 грн |
| 25+ | 21.30 грн |
| 50+ | 19.38 грн |
| 100+ | 17.87 грн |
| 200+ | 16.70 грн |
| 250+ | 16.37 грн |
| 500+ | 15.53 грн |
| NVLJWS022N06CLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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| KSA1013YTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
на замовлення 3439 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.17 грн |
| 18+ | 24.55 грн |
| 100+ | 14.20 грн |
| 250+ | 11.86 грн |
| 500+ | 11.61 грн |
| KSA1013YBU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
на замовлення 5878 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.87 грн |
| 13+ | 33.41 грн |
| 15+ | 28.65 грн |
| 100+ | 16.95 грн |
| 500+ | 13.36 грн |
| BZX85C12-T50R |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
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| MC7918CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
на замовлення 2381 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.07 грн |
| 15+ | 28.73 грн |
| 25+ | 22.88 грн |
| 50+ | 20.38 грн |
| 100+ | 19.29 грн |
| BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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| BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
на замовлення 1925 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.59 грн |
| 30+ | 14.28 грн |
| 100+ | 8.28 грн |
| 500+ | 5.75 грн |
| 1000+ | 5.00 грн |
| MC33079DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Integrated circuit features: low noise
Voltage supply range: ± 5...18V DC; 10...36V DC
Slew rate: 7V/μs
Bandwidth: 16MHz
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Integrated circuit features: low noise
Voltage supply range: ± 5...18V DC; 10...36V DC
Slew rate: 7V/μs
Bandwidth: 16MHz
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
на замовлення 3508 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.59 грн |
| 27+ | 15.62 грн |
| 30+ | 14.20 грн |
| 100+ | 12.28 грн |
| 250+ | 11.53 грн |
| 500+ | 11.02 грн |
| 1000+ | 10.94 грн |
| MC33074DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
на замовлення 746 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.78 грн |
| 13+ | 34.24 грн |
| 16+ | 26.22 грн |
| 25+ | 25.72 грн |
| MC33035DWR2G |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 10...30V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 10...30V DC
Kind of package: reel; tape
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| MC33074ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC33074ADTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC33074DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MJH11022G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
на замовлення 146 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 268.93 грн |
| 3+ | 247.21 грн |
| 10+ | 205.45 грн |
| 20+ | 203.78 грн |
| MJH11020G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
на замовлення 23 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 394.84 грн |
| MJH11021G |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
на замовлення 173 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 287.30 грн |
| 10+ | 256.40 грн |
| 74AC04SC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: AC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: AC
Number of inputs: 1
на замовлення 329 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.98 грн |
| 18+ | 23.80 грн |
| 25+ | 20.55 грн |
| 55+ | 18.62 грн |
| 110+ | 17.46 грн |
| 275+ | 16.45 грн |
| MM74HCT74M |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Quiescent current: 40µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Quiescent current: 40µA
на замовлення 114 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.18 грн |
| 19+ | 22.55 грн |
| FCD380N60E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FCP380N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCP380N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| NTD280N60S5Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCPF380N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF380N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| BAV70LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
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| MC33151DG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Case: SO8
Kind of package: tube
Operating temperature: -40...85°C
Output current: -1.5...1.5A
Kind of output: inverting
Pulse fall time: 30ns
Impulse rise time: 30ns
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Kind of integrated circuit: MOSFET gate driver
Mounting: SMD
Protection: undervoltage UVP
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Case: SO8
Kind of package: tube
Operating temperature: -40...85°C
Output current: -1.5...1.5A
Kind of output: inverting
Pulse fall time: 30ns
Impulse rise time: 30ns
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Kind of integrated circuit: MOSFET gate driver
Mounting: SMD
Protection: undervoltage UVP
Type of integrated circuit: driver
на замовлення 61 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.64 грн |
| 10+ | 63.47 грн |
| 25+ | 58.46 грн |
| MC33151PG | ![]() |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
на замовлення 77 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.65 грн |
| 10+ | 65.14 грн |
| MC33151DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of output: inverting
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| MC34151DG | ![]() |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Output voltage: 0.8...11.2V
Kind of package: tube
Protection: undervoltage UVP
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Output voltage: 0.8...11.2V
Kind of package: tube
Protection: undervoltage UVP
на замовлення 98 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.75 грн |
| 7+ | 64.31 грн |
| 10+ | 63.47 грн |
| 1N5404RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO27
Mounting: THT
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO27
Mounting: THT
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
на замовлення 1127 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.28 грн |
| 38+ | 11.27 грн |
| 50+ | 9.69 грн |
| 100+ | 8.94 грн |
| 200+ | 8.27 грн |
| 500+ | 8.18 грн |
| MOCD223M | ![]() |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Mounting: SMD
Case: SO8
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 8µs
Turn-off time: 55µs
Number of channels: 2
Collector-emitter voltage: 30V
CTR@If: 500-1000%@1mA
Insulation voltage: 2.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Mounting: SMD
Case: SO8
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 8µs
Turn-off time: 55µs
Number of channels: 2
Collector-emitter voltage: 30V
CTR@If: 500-1000%@1mA
Insulation voltage: 2.5kV
на замовлення 53 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.36 грн |
| 13+ | 34.58 грн |
| 25+ | 31.82 грн |
| 30+ | 31.24 грн |
| 50+ | 29.73 грн |
| MBRB20200CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
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| MCT9001 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Case: DIP8
Mounting: THT
Kind of output: transistor
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Case: DIP8
Mounting: THT
Kind of output: transistor
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
на замовлення 892 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.76 грн |
| 11+ | 39.92 грн |
| 25+ | 30.82 грн |
| 50+ | 24.55 грн |
| 100+ | 19.88 грн |
| 250+ | 18.46 грн |
| MCT9001SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Case: PDIP8
Mounting: SMD
Manufacturer series: MCT9001
Kind of output: transistor
Type of optocoupler: optocoupler
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Case: PDIP8
Mounting: SMD
Manufacturer series: MCT9001
Kind of output: transistor
Type of optocoupler: optocoupler
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
на замовлення 669 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.15 грн |
| 10+ | 45.10 грн |
| 100+ | 36.08 грн |
| FQD5P20TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1103 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.87 грн |
| 14+ | 30.90 грн |
| 100+ | 28.73 грн |
| 500+ | 27.98 грн |
| MC74HC390ADR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
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| MC74HC390ADTR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
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| MC74ACT161DG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Manufacturer series: ACT
Number of inputs: 9
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Manufacturer series: ACT
Number of inputs: 9
на замовлення 67 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.98 грн |
| 14+ | 30.65 грн |
| 15+ | 28.31 грн |
| 25+ | 27.48 грн |
| 48+ | 26.73 грн |
| 74ACT240MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of integrated circuit: buffer; inverting; line driver
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of integrated circuit: buffer; inverting; line driver
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
на замовлення 140 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 98.04 грн |
| 10+ | 55.96 грн |
| 25+ | 46.44 грн |
| 50+ | 40.67 грн |
| 75+ | 37.83 грн |
| MM74HCT240MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
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| MC74ACT157DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Manufacturer series: ACT
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Kind of package: tube
Number of channels: 4
Supply voltage: 4.5...5.5V DC
Number of inputs: 4
Family: ACT
Kind of integrated circuit: multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Manufacturer series: ACT
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Kind of package: tube
Number of channels: 4
Supply voltage: 4.5...5.5V DC
Number of inputs: 4
Family: ACT
Kind of integrated circuit: multiplexer
на замовлення 237 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.47 грн |
| M74VHCT157ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP16; VHCT
Case: TSSOP16
Mounting: SMD
Manufacturer series: VHCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of channels: 4
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: multiplexer
Family: VHCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP16; VHCT
Case: TSSOP16
Mounting: SMD
Manufacturer series: VHCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of channels: 4
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: multiplexer
Family: VHCT
Technology: CMOS; TTL
Type of integrated circuit: digital
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| MC74ACT157DR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 4
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Technology: TTL
Kind of package: reel; tape
Manufacturer series: ACT
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 4
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Technology: TTL
Kind of package: reel; tape
Manufacturer series: ACT
товару немає в наявності
В кошику
од. на суму грн.
| 4N33M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Mounting: THT
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Mounting: THT
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
на замовлення 960 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.18 грн |
| 18+ | 24.14 грн |
| 25+ | 21.21 грн |
| 50+ | 19.38 грн |
| 100+ | 17.79 грн |
| 500+ | 16.37 грн |
| 4N33SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Manufacturer series: 4N3X
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: PDIP6
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Max. off-state voltage: 3V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Manufacturer series: 4N3X
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: PDIP6
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Max. off-state voltage: 3V
на замовлення 543 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.76 грн |
| 12+ | 37.42 грн |
| 50+ | 26.64 грн |
| 100+ | 23.05 грн |
| 200+ | 20.21 грн |
| 500+ | 19.88 грн |
| 4N33SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.





























