Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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ES3J | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 45pF Power dissipation: 1.66W |
на замовлення 3352 шт: термін постачання 21-30 дні (днів) |
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MBR20L45CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.47V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube Heatsink thickness: 1.15...1.39mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDMS86520 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 80A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP51460SN33T1G | ONSEMI |
![]() Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 3.3V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...100°C Operating voltage: 4.2...28V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 301 шт: термін постачання 21-30 дні (днів) |
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MC14073BDG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Operating temperature: -55...125°C Number of inputs: 3 Type of integrated circuit: digital Number of channels: triple; 3 Delay time: 130ns Kind of package: tube Kind of gate: AND Technology: CMOS Family: HEF4000B Mounting: SMD Case: SO14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14073BDR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Operating temperature: -55...125°C Number of inputs: 3 Type of integrated circuit: digital Number of channels: triple; 3 Delay time: 130ns Kind of package: reel; tape Kind of gate: AND Technology: CMOS Family: HEF4000B Mounting: SMD Case: SO14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FSQ0365RLX | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: LSOP8 Mounting: SMD Operating temperature: -40...85°C Topology: flyback On-state resistance: 4.5Ω Power: 19W Input voltage: 85...265V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HCT595ADG | ONSEMI |
![]() Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; tube Operating temperature: -55...125°C Manufacturer series: HCT Kind of package: tube Number of channels: 1 Kind of output: 3-state Technology: CMOS; TTL Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register Family: HCT Mounting: SMD Case: SOIC16 Number of inputs: 5 Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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MC74HCT595ADTG | ONSEMI |
![]() Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; tube Operating temperature: -55...125°C Manufacturer series: HCT Kind of package: tube Number of channels: 1 Kind of output: 3-state Technology: CMOS; TTL Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register Family: HCT Mounting: SMD Case: TSSOP16 Number of inputs: 5 Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital |
на замовлення 268 шт: термін постачання 21-30 дні (днів) |
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MC33172DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 2.1V/μs Operating temperature: -40...85°C Input offset voltage: 2mV Kind of package: reel; tape Voltage supply range: ± 1.5...22V DC; 3...44V DC |
на замовлення 2379 шт: термін постачання 21-30 дні (днів) |
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MMUN2214LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 18723 шт: термін постачання 21-30 дні (днів) |
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GBU4M | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
74FST3257MNTWG | ONSEMI |
![]() Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: digital Number of channels: 4 Quiescent current: 3µA Kind of package: reel; tape Kind of integrated circuit: demultiplexer; multiplexer Case: QFN16 Supply voltage: 4...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMS8025S | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 49A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DF10M | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Electrical mounting: THT Features of semiconductor devices: glass passivated Max. off-state voltage: 1kV Type of bridge rectifier: single-phase Max. forward voltage: 1.1V Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX79C2V4 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 0.1mA |
на замовлення 2309 шт: термін постачання 21-30 дні (днів) |
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FSUSB42MUX | ONSEMI |
![]() Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Case: MSOP10 Supply voltage: 2.4...4.4V DC Mounting: SMD Operating temperature: -40...85°C Number of channels: 2 Kind of output: DPDT |
на замовлення 619 шт: термін постачання 21-30 дні (днів) |
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H11L2M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM Case: DIP6 Turn-on time: 4µs Turn-off time: 4µs Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 4.17kV Manufacturer series: H11LXM Type of optocoupler: optocoupler Mounting: THT |
на замовлення 1013 шт: термін постачання 21-30 дні (днів) |
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74AC86MTCX | ONSEMI |
![]() ![]() Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
74AC86SCX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MC74AC86DR2G | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MC74AC86DTR2G | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM74HCT541MTC | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: HCT |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
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MM74HCT541WM | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Quiescent current: 80µA Manufacturer series: HCT |
на замовлення 141 шт: термін постачання 21-30 дні (днів) |
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MM74HCT541WMX | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC20 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HCT Manufacturer series: HCT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX79C9V1 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 0.5µA |
на замовлення 2101 шт: термін постачання 21-30 дні (днів) |
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ES1B | ONSEMI |
![]() Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Leakage current: 0.1mA Load current: 1A Semiconductor structure: single diode Reverse recovery time: 15ns Max. forward impulse current: 30A Max. off-state voltage: 100V Capacitance: 7pF Power dissipation: 1.47W Kind of package: reel; tape Type of diode: rectifying Case: SMA Features of semiconductor devices: fast switching Mounting: SMD Max. forward voltage: 0.92V |
на замовлення 3595 шт: термін постачання 21-30 дні (днів) |
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MJE15035G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB Collector-emitter voltage: 350V Collector current: 4A Type of transistor: PNP Power dissipation: 50W Polarisation: bipolar Kind of package: tube Case: TO220AB Mounting: THT Frequency: 30MHz |
на замовлення 183 шт: термін постачання 21-30 дні (днів) |
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MC78LC50NTRG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Tolerance: ±2.5% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Kind of package: reel; tape Output voltage: 5V Output current: 0.1A Voltage drop: 0.038V Number of channels: 1 Input voltage: 6...12V Manufacturer series: MC78LC00 Kind of voltage regulator: fixed; LDO; linear |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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MMUN2216LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
на замовлення 5938 шт: термін постачання 21-30 дні (днів) |
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SMMUN2214LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 6243 шт: термін постачання 21-30 дні (днів) |
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NSVMMUN2212LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Current gain: 60...100 |
на замовлення 2435 шт: термін постачання 21-30 дні (днів) |
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MMUN2212LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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MMUN2217LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMUN2211LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMUN2230LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Current gain: 3...5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMUN2236LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Base-emitter resistor: 100kΩ Current gain: 80...150 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMUN2238LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 160...350 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMUN2240LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...300 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMUN2241LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Current gain: 160...350 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMUN2238LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMUN2234LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMUN2211LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMUN2216LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM358M | ONSEMI |
![]() Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: 2 Case: SO8 Operating temperature: -40...85°C Voltage supply range: ± 1.5...16V DC; 3...32V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NCP51810AMNTWG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: QFN15 Supply voltage: 9...17V DC Mounting: SMD Operating temperature: -40...125°C Output current: -2...1A Technology: GaN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMMUN2113LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
на замовлення 2916 шт: термін постачання 21-30 дні (днів) |
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2N7002LT3G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||
FUSB251UCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15 Quiescent current: 15µA Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: WLCSP15 Supply voltage: 2.7...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FUSB302BUCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: WLCSP9 Supply voltage: 2.7...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FUSB307BMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: QFN16 Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FUSB307BVMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: QFN16 Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FUSB308BVMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...105°C Case: QFN16 Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FUSB380CUCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: WLCSP12 Supply voltage: 2.4...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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80SQ045NG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Case: DO201AD Mounting: THT Max. off-state voltage: 45V Max. forward voltage: 0.55V Load current: 8A Semiconductor structure: single diode Kind of package: bulk Type of diode: Schottky rectifying |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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QSD2030F | ONSEMI |
![]() Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black Operating voltage: 1.3V LED diameter: 5mm Wavelength: 700...1100nm LED lens: black Viewing angle: 20° Type of photoelement: photodiode Wavelength of peak sensitivity: 880nm Front: convex Mounting: THT |
на замовлення 1988 шт: термін постачання 21-30 дні (днів) |
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NJW0302G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 150W Case: TO3P Current gain: 75...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
на замовлення 281 шт: термін постачання 21-30 дні (днів) |
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FDB0190N807L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 Mounting: SMD Kind of package: reel; tape Gate charge: 249nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1.44kA Case: D2PAK-6 Drain-source voltage: 80V Drain current: 190A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MURS360T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A Type of diode: rectifying Case: SMC Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Max. forward voltage: 1.28V Reverse recovery time: 75ns Max. forward impulse current: 100A |
на замовлення 1272 шт: термін постачання 21-30 дні (днів) |
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PZTA06 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4 Mounting: SMD Case: SOT223-4; TO261-4 Kind of package: reel; tape Frequency: 100MHz Collector-emitter voltage: 80V Current gain: 100 Collector current: 0.5A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar |
на замовлення 3344 шт: термін постачання 21-30 дні (днів) |
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ES3J |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
на замовлення 3352 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.92 грн |
16+ | 25.32 грн |
59+ | 15.18 грн |
162+ | 14.34 грн |
1000+ | 13.80 грн |
MBR20L45CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
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В кошику
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FDMS86520 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
NCP51460SN33T1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Operating voltage: 4.2...28V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Operating voltage: 4.2...28V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 301 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.53 грн |
12+ | 32.56 грн |
35+ | 26.75 грн |
50+ | 26.23 грн |
94+ | 25.29 грн |
100+ | 24.33 грн |
MC14073BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
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MC14073BDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
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FSQ0365RLX |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
On-state resistance: 4.5Ω
Power: 19W
Input voltage: 85...265V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
On-state resistance: 4.5Ω
Power: 19W
Input voltage: 85...265V
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MC74HCT595ADG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; tube
Operating temperature: -55...125°C
Manufacturer series: HCT
Kind of package: tube
Number of channels: 1
Kind of output: 3-state
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Family: HCT
Mounting: SMD
Case: SOIC16
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; tube
Operating temperature: -55...125°C
Manufacturer series: HCT
Kind of package: tube
Number of channels: 1
Kind of output: 3-state
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Family: HCT
Mounting: SMD
Case: SOIC16
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.42 грн |
12+ | 33.56 грн |
13+ | 30.28 грн |
25+ | 27.38 грн |
40+ | 22.50 грн |
96+ | 22.35 грн |
MC74HCT595ADTG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; tube
Operating temperature: -55...125°C
Manufacturer series: HCT
Kind of package: tube
Number of channels: 1
Kind of output: 3-state
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Family: HCT
Mounting: SMD
Case: TSSOP16
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; tube
Operating temperature: -55...125°C
Manufacturer series: HCT
Kind of package: tube
Number of channels: 1
Kind of output: 3-state
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Family: HCT
Mounting: SMD
Case: TSSOP16
Number of inputs: 5
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
на замовлення 268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 87.88 грн |
10+ | 50.94 грн |
27+ | 33.33 грн |
74+ | 31.50 грн |
192+ | 30.35 грн |
MC33172DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Voltage supply range: ± 1.5...22V DC; 3...44V DC
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.42 грн |
11+ | 37.29 грн |
25+ | 31.42 грн |
39+ | 23.26 грн |
106+ | 22.04 грн |
250+ | 21.20 грн |
MMUN2214LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 18723 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.21 грн |
77+ | 4.96 грн |
124+ | 3.08 грн |
500+ | 2.27 грн |
774+ | 1.15 грн |
2128+ | 1.09 грн |
GBU4M |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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74FST3257MNTWG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 3µA
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Case: QFN16
Supply voltage: 4...5.5V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 3µA
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Case: QFN16
Supply voltage: 4...5.5V DC
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FDMS8025S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Case: Power56
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Case: Power56
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
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DF10M |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
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BZX79C2V4 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
на замовлення 2309 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.68 грн |
64+ | 6.02 грн |
157+ | 2.43 грн |
473+ | 1.89 грн |
500+ | 1.84 грн |
1000+ | 1.76 грн |
FSUSB42MUX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Kind of output: DPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Kind of output: DPDT
на замовлення 619 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 68.17 грн |
10+ | 45.61 грн |
25+ | 40.50 грн |
34+ | 26.39 грн |
94+ | 24.94 грн |
H11L2M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Case: DIP6
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Manufacturer series: H11LXM
Type of optocoupler: optocoupler
Mounting: THT
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Case: DIP6
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Manufacturer series: H11LXM
Type of optocoupler: optocoupler
Mounting: THT
на замовлення 1013 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 93.63 грн |
10+ | 55.37 грн |
21+ | 44.04 грн |
56+ | 41.64 грн |
500+ | 41.03 грн |
74AC86MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
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74AC86SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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од. на суму грн.
MC74AC86DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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од. на суму грн.
MC74AC86DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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од. на суму грн.
MM74HCT541MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: HCT
на замовлення 231 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.42 грн |
10+ | 50.79 грн |
25+ | 44.92 грн |
35+ | 26.46 грн |
95+ | 25.01 грн |
MM74HCT541WM |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 80µA
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 80µA
Manufacturer series: HCT
на замовлення 141 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.60 грн |
10+ | 43.78 грн |
25+ | 37.37 грн |
67+ | 35.39 грн |
114+ | 34.01 грн |
MM74HCT541WMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
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BZX79C9V1 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.5µA
на замовлення 2101 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.86 грн |
56+ | 6.86 грн |
68+ | 5.64 грн |
122+ | 3.13 грн |
250+ | 2.52 грн |
448+ | 1.99 грн |
1000+ | 1.91 грн |
1230+ | 1.88 грн |
ES1B |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Capacitance: 7pF
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Features of semiconductor devices: fast switching
Mounting: SMD
Max. forward voltage: 0.92V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Capacitance: 7pF
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Features of semiconductor devices: fast switching
Mounting: SMD
Max. forward voltage: 0.92V
на замовлення 3595 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.00 грн |
27+ | 14.64 грн |
50+ | 9.99 грн |
100+ | 8.54 грн |
130+ | 6.94 грн |
357+ | 6.56 грн |
500+ | 6.33 грн |
MJE15035G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Collector-emitter voltage: 350V
Collector current: 4A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Collector-emitter voltage: 350V
Collector current: 4A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
на замовлення 183 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 102.19 грн |
10+ | 89.23 грн |
12+ | 77.79 грн |
32+ | 73.21 грн |
MC78LC50NTRG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Tolerance: ±2.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 5V
Output current: 0.1A
Voltage drop: 0.038V
Number of channels: 1
Input voltage: 6...12V
Manufacturer series: MC78LC00
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Tolerance: ±2.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 5V
Output current: 0.1A
Voltage drop: 0.038V
Number of channels: 1
Input voltage: 6...12V
Manufacturer series: MC78LC00
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.96 грн |
18+ | 22.12 грн |
25+ | 18.07 грн |
100+ | 13.42 грн |
182+ | 4.96 грн |
499+ | 4.65 грн |
MMUN2216LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
на замовлення 5938 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.03 грн |
69+ | 5.57 грн |
94+ | 4.09 грн |
107+ | 3.57 грн |
500+ | 2.65 грн |
636+ | 1.41 грн |
1748+ | 1.33 грн |
SMMUN2214LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 6243 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.50 грн |
58+ | 6.63 грн |
100+ | 4.13 грн |
304+ | 2.94 грн |
836+ | 2.78 грн |
1000+ | 2.67 грн |
NSVMMUN2212LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 60...100
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 60...100
на замовлення 2435 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.50 грн |
58+ | 6.63 грн |
100+ | 4.13 грн |
294+ | 3.04 грн |
500+ | 3.02 грн |
808+ | 2.88 грн |
1000+ | 2.77 грн |
MMUN2212LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
63+ | 6.57 грн |
109+ | 3.51 грн |
148+ | 2.59 грн |
210+ | 1.82 грн |
870+ | 1.03 грн |
2395+ | 0.97 грн |
MMUN2217LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
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MMUN2211LT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
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од. на суму грн.
MMUN2230LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
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MMUN2236LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Current gain: 80...150
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Current gain: 80...150
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MMUN2238LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
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MMUN2240LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
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MMUN2241LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
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SMMUN2238LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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SMMUN2234LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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SMMUN2211LT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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SMMUN2216LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
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LM358M |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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NCP51810AMNTWG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN15
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...1A
Technology: GaN
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN15
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...1A
Technology: GaN
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SMMUN2113LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
на замовлення 2916 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.39 грн |
91+ | 4.19 грн |
126+ | 3.04 грн |
250+ | 2.58 грн |
500+ | 2.23 грн |
581+ | 1.57 грн |
1596+ | 1.49 грн |
2N7002LT3G | ![]() |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FUSB251UCX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Quiescent current: 15µA
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP15
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Quiescent current: 15µA
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP15
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
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FUSB302BUCX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP9
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP9
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
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FUSB307BMPX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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FUSB307BVMPX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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FUSB308BVMPX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...105°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...105°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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FUSB380CUCX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
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80SQ045NG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Case: DO201AD
Mounting: THT
Max. off-state voltage: 45V
Max. forward voltage: 0.55V
Load current: 8A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Case: DO201AD
Mounting: THT
Max. off-state voltage: 45V
Max. forward voltage: 0.55V
Load current: 8A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: Schottky rectifying
на замовлення 235 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.35 грн |
10+ | 42.94 грн |
25+ | 36.00 грн |
69+ | 34.01 грн |
QSD2030F |
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Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Operating voltage: 1.3V
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Mounting: THT
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Operating voltage: 1.3V
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Mounting: THT
на замовлення 1988 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.31 грн |
12+ | 33.17 грн |
25+ | 25.62 грн |
50+ | 20.59 грн |
51+ | 17.85 грн |
100+ | 16.24 грн |
NJW0302G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 281 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 200.40 грн |
7+ | 136.51 грн |
18+ | 128.89 грн |
120+ | 124.31 грн |
FDB0190N807L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
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MURS360T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 1.28V
Reverse recovery time: 75ns
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 1.28V
Reverse recovery time: 75ns
Max. forward impulse current: 100A
на замовлення 1272 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.35 грн |
14+ | 28.83 грн |
48+ | 18.84 грн |
130+ | 17.85 грн |
1000+ | 17.16 грн |
PZTA06 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4
Mounting: SMD
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4
Mounting: SMD
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
на замовлення 3344 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.85 грн |
25+ | 27.68 грн |
39+ | 23.19 грн |
107+ | 21.93 грн |