Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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LM358M | ONSEMI |
![]() Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: 2 Case: SO8 Operating temperature: -40...85°C Voltage supply range: ± 1.5...16V DC; 3...32V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
NCP51810AMNTWG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: QFN15 Supply voltage: 9...17V DC Mounting: SMD Operating temperature: -40...125°C Output current: -2...1A Technology: GaN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMMUN2113LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
на замовлення 2916 шт: термін постачання 21-30 дні (днів) |
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2N7002LT3G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
FUSB251UCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15 Quiescent current: 15µA Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: WLCSP15 Supply voltage: 2.7...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FUSB302BUCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: WLCSP9 Supply voltage: 2.7...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FUSB307BMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: QFN16 Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FUSB307BVMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: QFN16 Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FUSB308BVMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...105°C Case: QFN16 Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FUSB380CUCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: WLCSP12 Supply voltage: 2.4...5.5V DC Type of integrated circuit: interface |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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80SQ045NG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Case: DO201AD Mounting: THT Max. off-state voltage: 45V Max. forward voltage: 0.55V Load current: 8A Semiconductor structure: single diode Kind of package: bulk Type of diode: Schottky rectifying |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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QSD2030F | ONSEMI |
![]() Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black Operating voltage: 1.3V LED diameter: 5mm Wavelength: 700...1100nm LED lens: black Viewing angle: 20° Type of photoelement: photodiode Wavelength of peak sensitivity: 880nm Front: convex Mounting: THT |
на замовлення 1988 шт: термін постачання 21-30 дні (днів) |
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NJW0302G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 150W Case: TO3P Current gain: 75...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
на замовлення 281 шт: термін постачання 21-30 дні (днів) |
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FDB0190N807L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 Mounting: SMD Kind of package: reel; tape Gate charge: 249nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1.44kA Case: D2PAK-6 Drain-source voltage: 80V Drain current: 190A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MURS360T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A Type of diode: rectifying Case: SMC Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Max. forward voltage: 1.28V Reverse recovery time: 75ns Max. forward impulse current: 100A |
на замовлення 1272 шт: термін постачання 21-30 дні (днів) |
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PZTA06 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4 Mounting: SMD Case: SOT223-4; TO261-4 Kind of package: reel; tape Frequency: 100MHz Collector-emitter voltage: 80V Current gain: 100 Collector current: 0.5A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar |
на замовлення 3344 шт: термін постачання 21-30 дні (днів) |
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QRD1114 | ONSEMI |
![]() ![]() Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C |
на замовлення 313 шт: термін постачання 21-30 дні (днів) |
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MC74HC1G00DTT1G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
на замовлення 1970 шт: термін постачання 21-30 дні (днів) |
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ES2A | ONSEMI |
![]() ![]() ![]() Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.66W Leakage current: 0.35mA Capacitance: 18pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MMBD4148 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.35W Capacitance: 4pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2N7002 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBRD835LT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 35V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.41V Kind of package: reel; tape Max. load current: 16A |
на замовлення 1123 шт: термін постачання 21-30 дні (днів) |
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MBRD1035CTLT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 35V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.55V Kind of package: reel; tape Max. load current: 10A |
на замовлення 1001 шт: термін постачання 21-30 дні (днів) |
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MBRD340T4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.45V Kind of package: reel; tape Max. load current: 6A |
на замовлення 1605 шт: термін постачання 21-30 дні (днів) |
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ES2D | ONSEMI |
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Features of semiconductor devices: fast switching Power dissipation: 1.66W Kind of package: reel; tape |
на замовлення 181 шт: термін постачання 21-30 дні (днів) |
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2N5460 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; -40V; 350mW; TO92 Type of transistor: P-JFET Polarisation: unipolar Case: TO92 Mounting: THT Drain-source voltage: -40V Average continuous current: -5mA Power: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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4N32M | ONSEMI |
![]() ![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 2.5kV; CTR@If: 50%@10mA Mounting: THT Type of optocoupler: optocoupler Case: DIP6 Turn-on time: 5µs Turn-off time: 0.1ms Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV CTR@If: 50%@10mA |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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4N32SM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; Gull wing 6 Mounting: SMD Type of optocoupler: optocoupler Case: Gull wing 6 Turn-on time: 5µs Turn-off time: 0.1ms Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
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BC848BWT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74ACT153DG | ONSEMI |
![]() Description: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT; tube Operating temperature: -40...85°C Case: SOIC16 Number of inputs: 7 Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital Number of channels: 2 Kind of package: tube Manufacturer series: ACT Technology: TTL Kind of integrated circuit: multiplexer Family: ACT Mounting: SMD |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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MMBTA14LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVR5198NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.2A Pulsed drain current: 27A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1693 шт: термін постачання 21-30 дні (днів) |
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MMSZ5227BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
MBRS320T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 80A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FDMS8680 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 35A; Idm: 100A; 50W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 100A Power dissipation: 50W Case: Power56 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDP047AN08A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
MC74LCX244DWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SO20WB; LCX Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20WB Manufacturer series: LCX Supply voltage: 1.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: LCX Integrated circuit features: tolerates a voltage of 5V on the inputs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MC74LCX244MNTWG | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; QFN20; LCX; LCX Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: QFN20 Manufacturer series: LCX Supply voltage: 1.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: LCX Integrated circuit features: tolerates a voltage of 5V on the inputs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BC858CDXV6T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FDMS86103L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Pulsed drain current: 414A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FDMS86550 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 148A Pulsed drain current: 1021A Power dissipation: 156W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 154nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FAN3224TMX | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Case: SO8 Technology: MillerDrive™ Kind of package: reel; tape Kind of output: non-inverting Output current: -4.3...2.8A Supply voltage: 4.5...18V DC Operating temperature: -40...125°C Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Type of integrated circuit: driver Impulse rise time: 20ns Pulse fall time: 17ns Number of channels: 2 |
на замовлення 2170 шт: термін постачання 21-30 дні (днів) |
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FAN3224CMX | ONSEMI |
![]() ![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Case: SO8 Technology: MillerDrive™ Kind of package: reel; tape Kind of output: non-inverting Output current: -4.3...2.8A Supply voltage: 4.5...18V DC Operating temperature: -40...125°C Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Type of integrated circuit: driver Impulse rise time: 20ns Pulse fall time: 17ns Number of channels: 2 |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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FNB41560 | ONSEMI |
![]() Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 45 Case: SPMAA-A26 Output current: 15A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Power dissipation: 34W Collector-emitter voltage: 600V |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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MMUN2114LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
на замовлення 3668 шт: термін постачання 21-30 дні (днів) |
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MC33164D-5G | ONSEMI |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Operating temperature: -40...125°C Case: SO8 DC supply current: 32µA Supply voltage: 1...10V DC Type of integrated circuit: supervisor circuit Maximum output current: 50mA Active logical level: low Kind of RESET output: open collector Kind of package: tube Threshold on-voltage: 4.33V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC251ADG | ONSEMI |
![]() Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3-state; data selector; multiplexer Mounting: SMD Case: SOIC16 Supply voltage: 2...6V DC Family: HC Kind of output: 3-state Kind of package: tube Manufacturer series: HC Technology: CMOS Number of inputs: 12 Number of channels: 1 Operating temperature: -55...125°C |
на замовлення 268 шт: термін постачання 21-30 дні (днів) |
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MC74HC251ADR2G | ONSEMI |
![]() Description: IC: digital; multiplexer; Ch: 1; SMD; SO16; HC; 2÷6VDC; tube; 160uA Type of integrated circuit: digital Kind of integrated circuit: multiplexer Mounting: SMD Case: SO16 Supply voltage: 2...6V DC Quiescent current: 160µA Kind of package: tube Manufacturer series: HC Number of channels: 1 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
MC74HC251ADTR2G | ONSEMI |
![]() Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3-state; data selector; multiplexer Mounting: SMD Case: TSSOP16 Supply voltage: 2...6V DC Family: HC Kind of output: 3-state Kind of package: reel; tape Manufacturer series: HC Technology: CMOS Number of inputs: 12 Number of channels: 1 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NCP3335ADM250R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; Micro8; SMD Case: Micro8 Tolerance: ±1.5% Output voltage: 2.5V Output current: 0.5A Voltage drop: 0.34V Type of integrated circuit: voltage regulator Number of channels: 2 Input voltage: 2.6...12V Manufacturer series: NCP3335A Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1SMA5916BT3G | ONSEMI |
![]() ![]() Description: Diode: Zener; 1.5W; 4.3V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 1134 шт: термін постачання 21-30 дні (днів) |
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FDMS7694 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 27W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC7812ABD2TR4G | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800 Tolerance: ±2% Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 14.8...27V Kind of package: reel; tape Manufacturer series: MC7800 Kind of voltage regulator: fixed; linear Case: D2PAK Output voltage: 12V Output current: 1A Voltage drop: 2V Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC7812ACD2TR4G | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800 Tolerance: ±2% Mounting: SMD Operating temperature: 0...125°C Number of channels: 1 Input voltage: 14.8...27V Kind of package: reel; tape Manufacturer series: MC7800 Kind of voltage regulator: fixed; linear Case: D2PAK Output voltage: 12V Output current: 1A Voltage drop: 2V Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
1N4934G | ONSEMI |
![]() Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Case: CASE59-10; DO41 Max. off-state voltage: 100V Max. forward voltage: 1.2V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 200ns Max. forward impulse current: 30A Kind of package: bulk Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1SMB5913BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode Case: SMB Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 3.3V Power dissipation: 3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: 1SMB59xxBT3G Mounting: SMD |
на замовлення 149 шт: термін постачання 21-30 дні (днів) |
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2N7000 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 5432 шт: термін постачання 21-30 дні (днів) |
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MBRS540T3G | ONSEMI |
![]() ![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. load current: 10A Kind of package: reel; tape |
на замовлення 1276 шт: термін постачання 21-30 дні (днів) |
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TIP117G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSR57 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA Gate current: 50mA Drain current: 20mA On-state resistance: 40Ω Type of transistor: N-JFET Power dissipation: 0.25W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -40V Mounting: SMD Case: SOT23 |
на замовлення 2775 шт: термін постачання 21-30 дні (днів) |
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LM358M |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
товару немає в наявності
В кошику
од. на суму грн.
NCP51810AMNTWG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN15
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...1A
Technology: GaN
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN15
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...1A
Technology: GaN
товару немає в наявності
В кошику
од. на суму грн.
SMMUN2113LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
на замовлення 2916 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.43 грн |
91+ | 4.21 грн |
126+ | 3.05 грн |
250+ | 2.59 грн |
500+ | 2.25 грн |
581+ | 1.58 грн |
1596+ | 1.49 грн |
2N7002LT3G | ![]() |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FUSB251UCX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Quiescent current: 15µA
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP15
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Quiescent current: 15µA
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP15
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
товару немає в наявності
В кошику
од. на суму грн.
FUSB302BUCX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP9
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP9
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
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В кошику
од. на суму грн.
FUSB307BMPX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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В кошику
од. на суму грн.
FUSB307BVMPX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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В кошику
од. на суму грн.
FUSB308BVMPX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...105°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...105°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
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В кошику
од. на суму грн.
FUSB380CUCX |
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Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
товару немає в наявності
В кошику
од. на суму грн.
80SQ045NG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Case: DO201AD
Mounting: THT
Max. off-state voltage: 45V
Max. forward voltage: 0.55V
Load current: 8A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Case: DO201AD
Mounting: THT
Max. off-state voltage: 45V
Max. forward voltage: 0.55V
Load current: 8A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: Schottky rectifying
на замовлення 235 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.67 грн |
10+ | 43.14 грн |
25+ | 36.17 грн |
69+ | 34.18 грн |
QSD2030F |
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Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Operating voltage: 1.3V
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Mounting: THT
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Operating voltage: 1.3V
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Mounting: THT
на замовлення 1988 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.60 грн |
12+ | 33.34 грн |
25+ | 25.75 грн |
50+ | 20.69 грн |
51+ | 17.93 грн |
100+ | 16.32 грн |
NJW0302G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 281 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 201.37 грн |
7+ | 137.17 грн |
18+ | 129.51 грн |
120+ | 124.91 грн |
FDB0190N807L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
MURS360T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 1.28V
Reverse recovery time: 75ns
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 1.28V
Reverse recovery time: 75ns
Max. forward impulse current: 100A
на замовлення 1272 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.57 грн |
14+ | 28.97 грн |
48+ | 18.93 грн |
130+ | 17.93 грн |
1000+ | 17.24 грн |
PZTA06 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4
Mounting: SMD
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4
Mounting: SMD
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
на замовлення 3344 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.01 грн |
25+ | 27.82 грн |
39+ | 23.31 грн |
107+ | 22.03 грн |
QRD1114 | ![]() |
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Виробник: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
на замовлення 313 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 141.95 грн |
10+ | 101.16 грн |
13+ | 73.57 грн |
34+ | 68.97 грн |
100+ | 68.20 грн |
MC74HC1G00DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
на замовлення 1970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.11 грн |
30+ | 13.10 грн |
100+ | 8.74 грн |
134+ | 6.67 грн |
368+ | 6.36 грн |
ES2A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
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MMBD4148 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.35W
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.35W
Capacitance: 4pF
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2N7002 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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MBRD835LT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.85 грн |
10+ | 43.07 грн |
30+ | 30.58 грн |
81+ | 28.89 грн |
500+ | 28.66 грн |
MBRD1035CTLT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Kind of package: reel; tape
Max. load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Kind of package: reel; tape
Max. load current: 10A
на замовлення 1001 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.32 грн |
10+ | 45.83 грн |
31+ | 29.20 грн |
85+ | 27.59 грн |
1000+ | 26.52 грн |
MBRD340T4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Kind of package: reel; tape
Max. load current: 6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Kind of package: reel; tape
Max. load current: 6A
на замовлення 1605 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.77 грн |
10+ | 42.23 грн |
34+ | 26.98 грн |
92+ | 25.52 грн |
500+ | 24.52 грн |
ES2D |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
на замовлення 181 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.54 грн |
23+ | 17.01 грн |
85+ | 10.65 грн |
2N5460 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; -40V; 350mW; TO92
Type of transistor: P-JFET
Polarisation: unipolar
Case: TO92
Mounting: THT
Drain-source voltage: -40V
Average continuous current: -5mA
Power: 0.35W
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; -40V; 350mW; TO92
Type of transistor: P-JFET
Polarisation: unipolar
Case: TO92
Mounting: THT
Drain-source voltage: -40V
Average continuous current: -5mA
Power: 0.35W
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4N32M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 2.5kV; CTR@If: 50%@10mA
Mounting: THT
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 2.5kV; CTR@If: 50%@10mA
Mounting: THT
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
на замовлення 197 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.29 грн |
12+ | 34.33 грн |
47+ | 19.31 грн |
128+ | 18.24 грн |
4N32SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; Gull wing 6
Mounting: SMD
Type of optocoupler: optocoupler
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; Gull wing 6
Mounting: SMD
Type of optocoupler: optocoupler
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
на замовлення 231 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.25 грн |
11+ | 36.02 грн |
25+ | 31.27 грн |
34+ | 26.36 грн |
94+ | 24.91 грн |
BC848BWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MC74ACT153DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Case: SOIC16
Number of inputs: 7
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
Kind of integrated circuit: multiplexer
Family: ACT
Mounting: SMD
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Case: SOIC16
Number of inputs: 7
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
Kind of integrated circuit: multiplexer
Family: ACT
Mounting: SMD
на замовлення 240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.83 грн |
10+ | 47.05 грн |
25+ | 38.93 грн |
35+ | 25.83 грн |
96+ | 24.37 грн |
MMBTA14LT1G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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NVR5198NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Pulsed drain current: 27A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Pulsed drain current: 27A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1693 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.01 грн |
21+ | 18.32 грн |
25+ | 15.71 грн |
85+ | 10.50 грн |
233+ | 9.96 грн |
1000+ | 9.89 грн |
MMSZ5227BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MBRS320T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
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FDMS8680 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDP047AN08A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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MC74LCX244DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SO20WB; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SO20WB; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
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MC74LCX244MNTWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; QFN20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: QFN20
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; QFN20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: QFN20
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
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BC858CDXV6T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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FDMS86103L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86550 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
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FAN3224TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Kind of package: reel; tape
Kind of output: non-inverting
Output current: -4.3...2.8A
Supply voltage: 4.5...18V DC
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 17ns
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Kind of package: reel; tape
Kind of output: non-inverting
Output current: -4.3...2.8A
Supply voltage: 4.5...18V DC
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 17ns
Number of channels: 2
на замовлення 2170 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.81 грн |
10+ | 65.14 грн |
19+ | 48.28 грн |
51+ | 45.98 грн |
500+ | 45.21 грн |
FAN3224CMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Kind of package: reel; tape
Kind of output: non-inverting
Output current: -4.3...2.8A
Supply voltage: 4.5...18V DC
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 17ns
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Kind of package: reel; tape
Kind of output: non-inverting
Output current: -4.3...2.8A
Supply voltage: 4.5...18V DC
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 17ns
Number of channels: 2
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 118.84 грн |
5+ | 105.75 грн |
10+ | 92.73 грн |
27+ | 87.36 грн |
500+ | 85.06 грн |
1000+ | 84.30 грн |
FNB41560 |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 34W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 34W
Collector-emitter voltage: 600V
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1055.54 грн |
3+ | 926.50 грн |
MMUN2114LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
на замовлення 3668 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.08 грн |
60+ | 6.44 грн |
72+ | 5.36 грн |
117+ | 3.28 грн |
145+ | 2.66 грн |
500+ | 1.72 грн |
696+ | 1.32 грн |
1912+ | 1.25 грн |
3000+ | 1.20 грн |
MC33164D-5G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Operating temperature: -40...125°C
Case: SO8
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: supervisor circuit
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: tube
Threshold on-voltage: 4.33V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Operating temperature: -40...125°C
Case: SO8
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: supervisor circuit
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: tube
Threshold on-voltage: 4.33V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
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MC74HC251ADG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Mounting: SMD
Case: SOIC16
Supply voltage: 2...6V DC
Family: HC
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HC
Technology: CMOS
Number of inputs: 12
Number of channels: 1
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Mounting: SMD
Case: SOIC16
Supply voltage: 2...6V DC
Family: HC
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HC
Technology: CMOS
Number of inputs: 12
Number of channels: 1
Operating temperature: -55...125°C
на замовлення 268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.85 грн |
11+ | 36.32 грн |
25+ | 31.11 грн |
42+ | 21.84 грн |
48+ | 21.76 грн |
114+ | 20.61 грн |
MC74HC251ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; SMD; SO16; HC; 2÷6VDC; tube; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Quiescent current: 160µA
Kind of package: tube
Manufacturer series: HC
Number of channels: 1
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; SMD; SO16; HC; 2÷6VDC; tube; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Quiescent current: 160µA
Kind of package: tube
Manufacturer series: HC
Number of channels: 1
Operating temperature: -55...125°C
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MC74HC251ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Family: HC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Number of inputs: 12
Number of channels: 1
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Family: HC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Number of inputs: 12
Number of channels: 1
Operating temperature: -55...125°C
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NCP3335ADM250R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; Micro8; SMD
Case: Micro8
Tolerance: ±1.5%
Output voltage: 2.5V
Output current: 0.5A
Voltage drop: 0.34V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2.6...12V
Manufacturer series: NCP3335A
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; Micro8; SMD
Case: Micro8
Tolerance: ±1.5%
Output voltage: 2.5V
Output current: 0.5A
Voltage drop: 0.34V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2.6...12V
Manufacturer series: NCP3335A
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
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1SMA5916BT3G | ![]() |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 1134 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.58 грн |
24+ | 16.48 грн |
50+ | 12.49 грн |
100+ | 11.04 грн |
122+ | 7.36 грн |
336+ | 6.90 грн |
FDMS7694 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 27W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 27W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC7812ABD2TR4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Tolerance: ±2%
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 14.8...27V
Kind of package: reel; tape
Manufacturer series: MC7800
Kind of voltage regulator: fixed; linear
Case: D2PAK
Output voltage: 12V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Tolerance: ±2%
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 14.8...27V
Kind of package: reel; tape
Manufacturer series: MC7800
Kind of voltage regulator: fixed; linear
Case: D2PAK
Output voltage: 12V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
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MC7812ACD2TR4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Tolerance: ±2%
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 14.8...27V
Kind of package: reel; tape
Manufacturer series: MC7800
Kind of voltage regulator: fixed; linear
Case: D2PAK
Output voltage: 12V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Tolerance: ±2%
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 14.8...27V
Kind of package: reel; tape
Manufacturer series: MC7800
Kind of voltage regulator: fixed; linear
Case: D2PAK
Output voltage: 12V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
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1N4934G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Max. off-state voltage: 100V
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Max. off-state voltage: 100V
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
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1SMB5913BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode
Case: SMB
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Power dissipation: 3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: 1SMB59xxBT3G
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; reel,tape; SMB; single diode
Case: SMB
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Power dissipation: 3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: 1SMB59xxBT3G
Mounting: SMD
на замовлення 149 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.19 грн |
22+ | 17.55 грн |
50+ | 12.34 грн |
100+ | 10.73 грн |
132+ | 6.82 грн |
2N7000 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 5432 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.84 грн |
17+ | 22.61 грн |
25+ | 17.78 грн |
94+ | 9.50 грн |
259+ | 9.04 грн |
1000+ | 8.74 грн |
MBRS540T3G | ![]() |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 10A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. load current: 10A
Kind of package: reel; tape
на замовлення 1276 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.49 грн |
16+ | 24.14 грн |
51+ | 17.63 грн |
140+ | 16.71 грн |
1000+ | 16.55 грн |
TIP117G |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
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BSR57 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 20mA
On-state resistance: 40Ω
Type of transistor: N-JFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 20mA
On-state resistance: 40Ω
Type of transistor: N-JFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
на замовлення 2775 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
35+ | 11.19 грн |
100+ | 9.89 грн |
110+ | 8.54 грн |
290+ | 8.07 грн |