| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
| FFSH5065B-F155 | ONSEMI |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 50A; TO247-2; Ir: 500nA Mounting: THT Kind of package: tube Leakage current: 0.5µA Max. forward voltage: 1.7V Load current: 50A Max. off-state voltage: 650V Max. forward impulse current: 1358A Application: automotive industry Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | |||||
| NDSH50120C-F155 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 53A; TO247-2; tube Mounting: THT Kind of package: tube Max. forward voltage: 1.75V Load current: 53A Max. off-state voltage: 1.2kV Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| NVDSH50120C | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 53A; TO247-2; tube Mounting: THT Kind of package: tube Max. forward voltage: 1.75V Load current: 53A Max. off-state voltage: 1.2kV Application: automotive industry Case: TO247-2 Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| FSB50450AS | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET; 1.5kV |
на замовлення 10141 шт: термін постачання 14-30 дні (днів) |
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 |
QEE123 | ONSEMI |
Category: IR LEDs Description: IR transmitter; 880nm; transparent; 9mW; 50°; 1.7VDC; λp max: 880nm Mounting: THT Wavelength of peak sensitivity: 880nm Wavelength: 880nm Dimensions: 4.44x2.54x5.08mm Radiant power: 9mW LED current: 100mA Operating voltage: 1.7V DC Viewing angle: 50° LED version: angular Type of diode: IR transmitter Shape: rectangular LED lens: transparent |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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 |
QEE122 | ONSEMI |
Category: IR LEDs Description: IR transmitter; 880nm; transparent; 9mW; 50°; 1.7VDC; λp max: 880nm Mounting: THT Wavelength of peak sensitivity: 880nm Wavelength: 880nm Dimensions: 4.44x2.54x5.08mm Radiant power: 9mW LED current: 100mA Operating voltage: 1.7V DC Viewing angle: 50° LED version: angular Type of diode: IR transmitter Shape: rectangular LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
1N4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||
 |
lm385d-1.2r2g | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.235V; ±2%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Tolerance: ±2% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 20mA Reference voltage: 1.235V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
FDS6975 | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 2W; SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET x2 Technology: PowerTrench® Kind of package: reel; tape Case: SO8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Gate charge: 20nC On-state resistance: 51mΩ Power dissipation: 2W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
MC74HC4852ADR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 2÷6VDC Type of integrated circuit: analog switch Number of channels: 2 Mounting: SMD Case: SO16 Operating temperature: -55...125°C Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: HC Supply voltage: 2...6V DC Kind of integrated circuit: demultiplexer; multiplexer Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||
 |
MC74HC4852ADTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; TSSOP16; 40uA Type of integrated circuit: analog switch Number of channels: 2 Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: HC Supply voltage: 2...6V DC Kind of integrated circuit: demultiplexer; multiplexer Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||
| FFSM0465A | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 4A; reel,tape Case: PQFN8x8 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 1.75V Load current: 4A Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| FXLP4555MPX | ONSEMI |
Category: Level translators Description: IC: digital; level shifter,translator; Ch: 1; 1.65÷5.5VDC; SMD Type of integrated circuit: digital Case: MLP16 Application: for smart card application Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Number of outputs: 1 Number of channels: 1 Number of inputs: 1 Supply voltage: 1.65...5.5V DC Kind of integrated circuit: level shifter; translator |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||
| NVMFS2D3P04M8LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFN5 Case: DFN5 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -900A Drain current: -222A Drain-source voltage: -40V Gate-source voltage: ±20V Gate charge: 157nC On-state resistance: 2.2mΩ Power dissipation: 103W Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| NVMFWS2D3P04M8LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5 Case: DFNW5 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -900A Drain current: -222A Drain-source voltage: -40V Gate-source voltage: ±20V Gate charge: 157nC On-state resistance: 2.2mΩ Power dissipation: 103W Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| NTMTS0D7N04CTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; Power88 Case: Power88 Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: 900A Drain current: 420A Drain-source voltage: 40V Gate-source voltage: ±20V Gate charge: 0.14µC On-state resistance: 670µΩ Power dissipation: 103W Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||
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FDS3572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 5.6A; 2.5W; SO8 Mounting: SMD Polarisation: unipolar On-state resistance: 32mΩ Power dissipation: 2.5W Drain current: 5.6A Gate-source voltage: ±20V Drain-source voltage: 80V Kind of channel: enhancement Case: SO8 Type of transistor: N-MOSFET Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| FDMS3572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; 78W; WDFN8 Mounting: SMD Polarisation: unipolar On-state resistance: 29mΩ Power dissipation: 78W Drain current: 22A Gate-source voltage: ±20V Drain-source voltage: 80V Kind of channel: enhancement Case: WDFN8 Type of transistor: N-MOSFET Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||
 |
MMBZ5245BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G |
товару немає в наявності |
В кошику од. на суму грн. |
| FFSH5065B-F155 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 50A; TO247-2; Ir: 500nA
Mounting: THT
Kind of package: tube
Leakage current: 0.5µA
Max. forward voltage: 1.7V
Load current: 50A
Max. off-state voltage: 650V
Max. forward impulse current: 1358A
Application: automotive industry
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 50A; TO247-2; Ir: 500nA
Mounting: THT
Kind of package: tube
Leakage current: 0.5µA
Max. forward voltage: 1.7V
Load current: 50A
Max. off-state voltage: 650V
Max. forward impulse current: 1358A
Application: automotive industry
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| NDSH50120C-F155 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 53A; TO247-2; tube
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 53A
Max. off-state voltage: 1.2kV
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 53A; TO247-2; tube
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 53A
Max. off-state voltage: 1.2kV
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| NVDSH50120C |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 53A; TO247-2; tube
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 53A
Max. off-state voltage: 1.2kV
Application: automotive industry
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 53A; TO247-2; tube
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 53A
Max. off-state voltage: 1.2kV
Application: automotive industry
Case: TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| FSB50450AS |
|
на замовлення 10141 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 450+ | 414.57 грн |
| QEE123 |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 880nm; transparent; 9mW; 50°; 1.7VDC; λp max: 880nm
Mounting: THT
Wavelength of peak sensitivity: 880nm
Wavelength: 880nm
Dimensions: 4.44x2.54x5.08mm
Radiant power: 9mW
LED current: 100mA
Operating voltage: 1.7V DC
Viewing angle: 50°
LED version: angular
Type of diode: IR transmitter
Shape: rectangular
LED lens: transparent
Category: IR LEDs
Description: IR transmitter; 880nm; transparent; 9mW; 50°; 1.7VDC; λp max: 880nm
Mounting: THT
Wavelength of peak sensitivity: 880nm
Wavelength: 880nm
Dimensions: 4.44x2.54x5.08mm
Radiant power: 9mW
LED current: 100mA
Operating voltage: 1.7V DC
Viewing angle: 50°
LED version: angular
Type of diode: IR transmitter
Shape: rectangular
LED lens: transparent
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 75.13 грн |
| 10+ | 51.78 грн |
| QEE122 |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 880nm; transparent; 9mW; 50°; 1.7VDC; λp max: 880nm
Mounting: THT
Wavelength of peak sensitivity: 880nm
Wavelength: 880nm
Dimensions: 4.44x2.54x5.08mm
Radiant power: 9mW
LED current: 100mA
Operating voltage: 1.7V DC
Viewing angle: 50°
LED version: angular
Type of diode: IR transmitter
Shape: rectangular
LED lens: transparent
Category: IR LEDs
Description: IR transmitter; 880nm; transparent; 9mW; 50°; 1.7VDC; λp max: 880nm
Mounting: THT
Wavelength of peak sensitivity: 880nm
Wavelength: 880nm
Dimensions: 4.44x2.54x5.08mm
Radiant power: 9mW
LED current: 100mA
Operating voltage: 1.7V DC
Viewing angle: 50°
LED version: angular
Type of diode: IR transmitter
Shape: rectangular
LED lens: transparent
товару немає в наявності
В кошику
од. на суму грн.
| 1N4007 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| lm385d-1.2r2g |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±2%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±2%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
товару немає в наявності
В кошику
од. на суму грн.
| FDS6975 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 2W; SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Gate charge: 20nC
On-state resistance: 51mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 2W; SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Case: SO8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Gate charge: 20nC
On-state resistance: 51mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC4852ADR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 2÷6VDC
Type of integrated circuit: analog switch
Number of channels: 2
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 2÷6VDC
Type of integrated circuit: analog switch
Number of channels: 2
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HC4852ADTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; TSSOP16; 40uA
Type of integrated circuit: analog switch
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; TSSOP16; 40uA
Type of integrated circuit: analog switch
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FFSM0465A |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 4A; reel,tape
Case: PQFN8x8
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 1.75V
Load current: 4A
Max. off-state voltage: 650V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 4A; reel,tape
Case: PQFN8x8
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 1.75V
Load current: 4A
Max. off-state voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.
| FXLP4555MPX |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter,translator; Ch: 1; 1.65÷5.5VDC; SMD
Type of integrated circuit: digital
Case: MLP16
Application: for smart card application
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of outputs: 1
Number of channels: 1
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: level shifter; translator
Category: Level translators
Description: IC: digital; level shifter,translator; Ch: 1; 1.65÷5.5VDC; SMD
Type of integrated circuit: digital
Case: MLP16
Application: for smart card application
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of outputs: 1
Number of channels: 1
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: level shifter; translator
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NVMFS2D3P04M8LT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFN5
Case: DFN5
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -900A
Drain current: -222A
Drain-source voltage: -40V
Gate-source voltage: ±20V
Gate charge: 157nC
On-state resistance: 2.2mΩ
Power dissipation: 103W
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFN5
Case: DFN5
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -900A
Drain current: -222A
Drain-source voltage: -40V
Gate-source voltage: ±20V
Gate charge: 157nC
On-state resistance: 2.2mΩ
Power dissipation: 103W
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVMFWS2D3P04M8LT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5
Case: DFNW5
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -900A
Drain current: -222A
Drain-source voltage: -40V
Gate-source voltage: ±20V
Gate charge: 157nC
On-state resistance: 2.2mΩ
Power dissipation: 103W
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5
Case: DFNW5
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -900A
Drain current: -222A
Drain-source voltage: -40V
Gate-source voltage: ±20V
Gate charge: 157nC
On-state resistance: 2.2mΩ
Power dissipation: 103W
Kind of channel: enhancement
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| NTMTS0D7N04CTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; Power88
Case: Power88
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 900A
Drain current: 420A
Drain-source voltage: 40V
Gate-source voltage: ±20V
Gate charge: 0.14µC
On-state resistance: 670µΩ
Power dissipation: 103W
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; Power88
Case: Power88
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 900A
Drain current: 420A
Drain-source voltage: 40V
Gate-source voltage: ±20V
Gate charge: 0.14µC
On-state resistance: 670µΩ
Power dissipation: 103W
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| FDS3572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 5.6A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 32mΩ
Power dissipation: 2.5W
Drain current: 5.6A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Kind of channel: enhancement
Case: SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 5.6A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 32mΩ
Power dissipation: 2.5W
Drain current: 5.6A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Kind of channel: enhancement
Case: SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
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| FDMS3572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; 78W; WDFN8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 29mΩ
Power dissipation: 78W
Drain current: 22A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Kind of channel: enhancement
Case: WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; 78W; WDFN8
Mounting: SMD
Polarisation: unipolar
On-state resistance: 29mΩ
Power dissipation: 78W
Drain current: 22A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Kind of channel: enhancement
Case: WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
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| MMBZ5245BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
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