Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDMS86101 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FCMT299N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 125W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74AC32MTC | ONSEMI |
![]() ![]() Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Family: AC |
на замовлення 481 шт: термін постачання 21-30 дні (днів) |
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SBCP56-10T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
на замовлення 181 шт: термін постачання 21-30 дні (днів) |
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UC2843BD1G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -25...85°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Operating voltage: 7.6...36V Power: 702mW |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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SBAS16HT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.75V Max. forward impulse current: 36A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Max. load current: 1A |
на замовлення 1280 шт: термін постачання 21-30 дні (днів) |
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MC74ACT125DTR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Manufacturer series: ACT Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state |
на замовлення 2268 шт: термін постачання 21-30 дні (днів) |
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FAN3111ESX | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Type of integrated circuit: driver Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Output current: -0.9...1.1A Impulse rise time: 18ns Pulse fall time: 17ns Number of channels: 1 Technology: MillerDrive™ Supply voltage: 4.5...18V DC |
на замовлення 1533 шт: термін постачання 21-30 дні (днів) |
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NCP361SNT1G | ONSEMI |
![]() Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Kind of output: transistor Application: USB Input voltage: 1.2...20V Threshold on-voltage: 3V |
на замовлення 2200 шт: термін постачання 21-30 дні (днів) |
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1SMB5917BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 4.7V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 5120 шт: термін постачання 21-30 дні (днів) |
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FIN1002M5X | ONSEMI |
![]() Description: IC: digital; line receiver,differential,translator; LVDS; SMD Supply voltage: 3...3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: tube Technology: LVDS Kind of integrated circuit: differential; line receiver; translator Mounting: SMD Operating temperature: -40...125°C Case: SOT23-5 |
на замовлення 1735 шт: термін постачання 21-30 дні (днів) |
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MC74ACT86DG | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 40µA Family: ACT |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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2SB815-7-TB-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59 Case: SC59 Kind of package: reel; tape Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 15V Current gain: 300...600 Collector current: 0.7A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP81080DR2G | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8 Mounting: SMD Case: SO8 Operating temperature: -40...140°C Pulse fall time: 17ns Impulse rise time: 19ns Type of integrated circuit: driver Output current: -800...500mA Supply voltage: 5.5...20V DC Kind of integrated circuit: gate driver; high-side Topology: MOSFET half-bridge |
на замовлення 765 шт: термін постачання 21-30 дні (днів) |
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SS12 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Power dissipation: 1.1W |
на замовлення 6573 шт: термін постачання 21-30 дні (днів) |
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BSS123 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 2.5nC Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 14613 шт: термін постачання 21-30 дні (днів) |
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BSS123W | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.68A |
на замовлення 1340 шт: термін постачання 21-30 дні (днів) |
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1N5408G | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Leakage current: 50µA Kind of package: bulk Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Case: DO27 Max. forward voltage: 1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A |
на замовлення 1396 шт: термін постачання 21-30 дні (днів) |
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MOC3022M | ONSEMI |
![]() Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Mounting: THT Manufacturer series: MOC302XM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74VHC1G08DTT1G | ONSEMI |
![]() ![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC |
на замовлення 3145 шт: термін постачання 21-30 дні (днів) |
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FDMS86350ET80 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 140A Power dissipation: 187W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SBAS16HT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 36A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP101G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 2W Case: TO220AB Current gain: 20000 Mounting: THT Kind of package: tube Heatsink thickness: 1.15...1.39mm |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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1N5407G | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Max. off-state voltage: 0.8kV Max. forward voltage: 1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Leakage current: 50µA Kind of package: bulk Type of diode: rectifying Mounting: THT Case: DO27 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NRVTSM260EV2T1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape Case: POWERMITE Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.65V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Application: automotive industry Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. load current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NRVTSM260EV2T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape Case: POWERMITE Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.65V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Application: automotive industry Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. load current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ESD9R3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD Mounting: SMD Case: SOD923 Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Max. forward impulse current: 1A Breakdown voltage: 4.8V Leakage current: 1nA Kind of package: reel; tape Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.15W |
на замовлення 8300 шт: термін постачання 21-30 дні (днів) |
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BAV102 | ONSEMI |
![]() Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 150V Load current: 0.5A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.6A Capacitance: 5pF Power dissipation: 0.5W |
на замовлення 106 шт: термін постачання 21-30 дні (днів) |
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MOC3032M | ONSEMI |
![]() Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs Manufacturer series: MOC303XM Mounting: THT Case: DIP6 Number of channels: 1 Kind of output: triac Insulation voltage: 7.5kV Slew rate: 2kV/μs Type of optocoupler: optotriac |
на замовлення 712 шт: термін постачання 21-30 дні (днів) |
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ESD9B3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SOD923 Capacitance: 15pF Max. off-state voltage: 3.3V Breakdown voltage: 5...7V Leakage current: 0.1µA Version: ESD Peak pulse power dissipation: 0.3W |
на замовлення 15412 шт: термін постачання 21-30 дні (днів) |
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SBC857BDW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 598 шт: термін постачання 21-30 дні (днів) |
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NCP451AFCT2G | ONSEMI |
![]() Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Case: WLCSP6 Mounting: SMD Supply voltage: 0.75...5.5V DC Kind of package: reel; tape Kind of output: N-Channel Active logical level: high Output current: 3A Number of channels: 1 On-state resistance: 35mΩ Kind of integrated circuit: high-side Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP451FCT2G | ONSEMI |
![]() Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Case: WLCSP6 Mounting: SMD Supply voltage: 0.75...5.5V DC Kind of package: reel; tape Kind of output: N-Channel Active logical level: high Output current: 3A Number of channels: 1 On-state resistance: 35mΩ Kind of integrated circuit: high-side Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1N4148WT | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: SOD523F Max. forward voltage: 1V Max. load current: 0.2A Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 3039 шт: термін постачання 21-30 дні (днів) |
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BAT54XV2T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape |
на замовлення 6495 шт: термін постачання 21-30 дні (днів) |
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MMSZ5239BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2557 шт: термін постачання 21-30 дні (днів) |
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NVTR4503NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Case: SOT23 Drain-source voltage: 30V Drain current: 1.5A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 0.73W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
на замовлення 385 шт: термін постачання 21-30 дні (днів) |
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FDMS86182 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 364A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FXMAR2102UMX | ONSEMI |
![]() Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Number of inputs: 2 Number of outputs: 2 Supply voltage: 1.65...5.5V DC Frequency: 50MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: MLP8 |
на замовлення 4696 шт: термін постачання 21-30 дні (днів) |
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BC639 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: TO92 Mounting: THT Frequency: 100MHz Power: 0.8W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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J310 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92 Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60mA Case: TO92 Mounting: THT Power: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS8550 | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP41C-TU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJE15030 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MPSA92G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Case: TO92 Mounting: THT Power dissipation: 0.625W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N5401G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Mounting: THT Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS8050C | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC550CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: TO92 Mounting: THT Frequency: 300MHz Power: 0.5W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ20VALT1G | ONSEMI |
![]() Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5% Case: SOT23 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; double Max. off-state voltage: 17V Tolerance: ±5% Type of diode: TVS array Version: ESD Breakdown voltage: 20V Peak pulse power dissipation: 40W Leakage current: 50nA Max. forward impulse current: 1.4A |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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LF353N | ONSEMI |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 16V/μs Operating temperature: 0...70°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HCPL2631 | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: open collector Transfer rate: 10Mbps Case: DIP8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 2.5kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SS25 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SS25FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74ACT74DR2G | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered Manufacturer series: ACT |
на замовлення 1950 шт: термін постачання 21-30 дні (днів) |
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SBC847BWT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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BC560CG | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: TO92 Mounting: THT Frequency: 150MHz Power: 0.5W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MPSA06G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Case: TO92 Mounting: THT Power dissipation: 0.625W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MPSA42G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC368 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 25V; 1A; 800mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 1A Case: TO92 Mounting: THT Frequency: 65MHz Power: 0.8W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBD6050LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW Case: SOT23 Capacitance: 5pF Max. off-state voltage: 250V Max. forward voltage: 1.25V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 50ns Leakage current: 0.1mA Power dissipation: 0.4W Type of diode: switching Mounting: SMD |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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FDMS86101 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FCMT299N60 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
товару немає в наявності
В кошику
од. на суму грн.
74AC32MTC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: AC
на замовлення 481 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.78 грн |
29+ | 13.72 грн |
96+ | 11.01 грн |
98+ | 9.38 грн |
267+ | 8.91 грн |
288+ | 8.76 грн |
SBCP56-10T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
на замовлення 181 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.23 грн |
19+ | 20.93 грн |
85+ | 10.70 грн |
UC2843BD1G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 702mW
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 417.39 грн |
SBAS16HT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
на замовлення 1280 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 4.04 грн |
280+ | 3.29 грн |
780+ | 3.11 грн |
MC74ACT125DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
на замовлення 2268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.23 грн |
17+ | 23.49 грн |
25+ | 20.85 грн |
49+ | 18.76 грн |
100+ | 18.14 грн |
133+ | 17.75 грн |
500+ | 17.05 грн |
FAN3111ESX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -0.9...1.1A
Impulse rise time: 18ns
Pulse fall time: 17ns
Number of channels: 1
Technology: MillerDrive™
Supply voltage: 4.5...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -0.9...1.1A
Impulse rise time: 18ns
Pulse fall time: 17ns
Number of channels: 1
Technology: MillerDrive™
Supply voltage: 4.5...18V DC
на замовлення 1533 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.26 грн |
10+ | 43.18 грн |
29+ | 32.01 грн |
78+ | 30.23 грн |
200+ | 29.07 грн |
NCP361SNT1G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of output: transistor
Application: USB
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of output: transistor
Application: USB
Input voltage: 1.2...20V
Threshold on-voltage: 3V
на замовлення 2200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.93 грн |
11+ | 37.52 грн |
36+ | 25.58 грн |
98+ | 24.18 грн |
250+ | 24.11 грн |
500+ | 23.25 грн |
1SMB5917BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 5120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.37 грн |
27+ | 14.88 грн |
50+ | 10.23 грн |
100+ | 8.76 грн |
137+ | 6.67 грн |
377+ | 6.28 грн |
1000+ | 6.05 грн |
FIN1002M5X |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Technology: LVDS
Kind of integrated circuit: differential; line receiver; translator
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Supply voltage: 3...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Technology: LVDS
Kind of integrated circuit: differential; line receiver; translator
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
на замовлення 1735 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.79 грн |
10+ | 44.80 грн |
25+ | 36.74 грн |
30+ | 30.77 грн |
81+ | 29.15 грн |
100+ | 27.98 грн |
MC74ACT86DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 40µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 40µA
Family: ACT
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 51.76 грн |
2SB815-7-TB-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 300...600
Collector current: 0.7A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 300...600
Collector current: 0.7A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
NCP81080DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Mounting: SMD
Case: SO8
Operating temperature: -40...140°C
Pulse fall time: 17ns
Impulse rise time: 19ns
Type of integrated circuit: driver
Output current: -800...500mA
Supply voltage: 5.5...20V DC
Kind of integrated circuit: gate driver; high-side
Topology: MOSFET half-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Mounting: SMD
Case: SO8
Operating temperature: -40...140°C
Pulse fall time: 17ns
Impulse rise time: 19ns
Type of integrated circuit: driver
Output current: -800...500mA
Supply voltage: 5.5...20V DC
Kind of integrated circuit: gate driver; high-side
Topology: MOSFET half-bridge
на замовлення 765 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 77.63 грн |
7+ | 64.34 грн |
16+ | 58.14 грн |
25+ | 57.36 грн |
43+ | 55.04 грн |
100+ | 52.71 грн |
SS12 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 6573 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.70 грн |
25+ | 15.81 грн |
31+ | 12.71 грн |
50+ | 11.16 грн |
100+ | 10.31 грн |
1000+ | 10.15 грн |
BSS123 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 2.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 2.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 14613 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.87 грн |
26+ | 15.35 грн |
50+ | 10.56 грн |
100+ | 8.74 грн |
333+ | 2.73 грн |
915+ | 2.58 грн |
BSS123W |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.68A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.68A
на замовлення 1340 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 11.69 грн |
55+ | 7.36 грн |
100+ | 6.51 грн |
160+ | 5.76 грн |
435+ | 5.45 грн |
1N5408G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Leakage current: 50µA
Kind of package: bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Case: DO27
Max. forward voltage: 1V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Leakage current: 50µA
Kind of package: bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Case: DO27
Max. forward voltage: 1V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
на замовлення 1396 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.71 грн |
23+ | 17.44 грн |
100+ | 12.01 грн |
103+ | 8.84 грн |
283+ | 8.37 грн |
MOC3022M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
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MC74VHC1G08DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
на замовлення 3145 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
35+ | 12.27 грн |
50+ | 9.92 грн |
130+ | 7.29 грн |
345+ | 6.90 грн |
3000+ | 6.59 грн |
FDMS86350ET80 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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SBAS16HT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
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TIP101G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
на замовлення 65 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 90.16 грн |
7+ | 56.59 грн |
10+ | 50.07 грн |
21+ | 43.41 грн |
58+ | 41.08 грн |
1N5407G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Max. off-state voltage: 0.8kV
Max. forward voltage: 1V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Leakage current: 50µA
Kind of package: bulk
Type of diode: rectifying
Mounting: THT
Case: DO27
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Max. off-state voltage: 0.8kV
Max. forward voltage: 1V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Leakage current: 50µA
Kind of package: bulk
Type of diode: rectifying
Mounting: THT
Case: DO27
товару немає в наявності
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од. на суму грн.
NRVTSM260EV2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 4A
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од. на суму грн.
NRVTSM260EV2T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 4A
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од. на суму грн.
ESD9R3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 1A
Breakdown voltage: 4.8V
Leakage current: 1nA
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 1A
Breakdown voltage: 4.8V
Leakage current: 1nA
Kind of package: reel; tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
на замовлення 8300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.08 грн |
13+ | 30.23 грн |
47+ | 19.61 грн |
127+ | 18.53 грн |
500+ | 18.29 грн |
1000+ | 17.83 грн |
BAV102 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.6A
Capacitance: 5pF
Power dissipation: 0.5W
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 150V
Load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.6A
Capacitance: 5pF
Power dissipation: 0.5W
на замовлення 106 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
106+ | 3.88 грн |
MOC3032M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Manufacturer series: MOC303XM
Mounting: THT
Case: DIP6
Number of channels: 1
Kind of output: triac
Insulation voltage: 7.5kV
Slew rate: 2kV/μs
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Manufacturer series: MOC303XM
Mounting: THT
Case: DIP6
Number of channels: 1
Kind of output: triac
Insulation voltage: 7.5kV
Slew rate: 2kV/μs
Type of optocoupler: optotriac
на замовлення 712 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.43 грн |
11+ | 36.04 грн |
29+ | 31.86 грн |
50+ | 29.30 грн |
100+ | 28.91 грн |
ESD9B3.3ST5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SOD923
Capacitance: 15pF
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 0.3W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SOD923
Capacitance: 15pF
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 0.3W
на замовлення 15412 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.85 грн |
60+ | 6.51 грн |
92+ | 4.23 грн |
110+ | 3.55 грн |
369+ | 2.45 грн |
1000+ | 2.23 грн |
SBC857BDW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 598 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.85 грн |
66+ | 5.89 грн |
90+ | 4.31 грн |
103+ | 3.77 грн |
443+ | 2.05 грн |
NCP451AFCT2G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Output current: 3A
Number of channels: 1
On-state resistance: 35mΩ
Kind of integrated circuit: high-side
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Output current: 3A
Number of channels: 1
On-state resistance: 35mΩ
Kind of integrated circuit: high-side
Control voltage: 0...5.5V DC
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NCP451FCT2G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Output current: 3A
Number of channels: 1
On-state resistance: 35mΩ
Kind of integrated circuit: high-side
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Output current: 3A
Number of channels: 1
On-state resistance: 35mΩ
Kind of integrated circuit: high-side
Control voltage: 0...5.5V DC
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1N4148WT |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Max. load current: 0.2A
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Max. load current: 0.2A
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 3039 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.13 грн |
82+ | 4.73 грн |
111+ | 3.50 грн |
250+ | 3.03 грн |
500+ | 2.68 грн |
610+ | 1.50 грн |
1676+ | 1.41 грн |
BAT54XV2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
на замовлення 6495 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.85 грн |
56+ | 6.98 грн |
70+ | 5.58 грн |
115+ | 3.38 грн |
139+ | 2.80 грн |
407+ | 2.23 грн |
1117+ | 2.11 грн |
MMSZ5239BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2557 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.35 грн |
68+ | 5.74 грн |
114+ | 3.41 грн |
123+ | 3.16 грн |
609+ | 1.49 грн |
1674+ | 1.41 грн |
NVTR4503NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 385 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.71 грн |
30+ | 13.25 грн |
100+ | 8.14 грн |
156+ | 5.89 грн |
FDMS86182 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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FXMAR2102UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Number of inputs: 2
Number of outputs: 2
Supply voltage: 1.65...5.5V DC
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP8
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Number of inputs: 2
Number of outputs: 2
Supply voltage: 1.65...5.5V DC
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP8
на замовлення 4696 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.77 грн |
10+ | 53.48 грн |
19+ | 49.61 грн |
50+ | 47.28 грн |
100+ | 45.73 грн |
BC639 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
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J310 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
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SS8550 |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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TIP41C-TU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MJE15030 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MPSA92G | ![]() |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
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2N5401G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
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SS8050C |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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BC550CG |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
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MMBZ20VALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 17V
Tolerance: ±5%
Type of diode: TVS array
Version: ESD
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Leakage current: 50nA
Max. forward impulse current: 1.4A
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 17V
Tolerance: ±5%
Type of diode: TVS array
Version: ESD
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Leakage current: 50nA
Max. forward impulse current: 1.4A
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.36 грн |
76+ | 5.12 грн |
98+ | 3.97 грн |
108+ | 3.59 грн |
417+ | 2.19 грн |
1146+ | 2.07 грн |
LF353N |
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Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
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HCPL2631 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
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SS25 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
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SS25FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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MC74ACT74DR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 1950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.74 грн |
17+ | 23.41 грн |
50+ | 18.45 грн |
72+ | 12.87 грн |
196+ | 12.17 грн |
SBC847BWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 160 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.87 грн |
34+ | 11.55 грн |
50+ | 7.77 грн |
100+ | 6.67 грн |
BC560CG | ![]() |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 150MHz
Power: 0.5W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 150MHz
Power: 0.5W
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MPSA06G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
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MPSA42G | ![]() |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
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BC368 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 65MHz
Power: 0.8W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 65MHz
Power: 0.8W
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MMBD6050LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Case: SOT23
Capacitance: 5pF
Max. off-state voltage: 250V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Leakage current: 0.1mA
Power dissipation: 0.4W
Type of diode: switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Case: SOT23
Capacitance: 5pF
Max. off-state voltage: 250V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Leakage current: 0.1mA
Power dissipation: 0.4W
Type of diode: switching
Mounting: SMD
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
62+ | 6.78 грн |
105+ | 3.72 грн |
144+ | 2.70 грн |
167+ | 2.33 грн |
652+ | 1.39 грн |
1500+ | 1.36 грн |
1794+ | 1.32 грн |