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MURA205T3G MURA205T3G ONSEMI mura205t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
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MJH11021G MJH11021G ONSEMI MJH11017G.PDF Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
2+289.18 грн
10+255.11 грн
Мінімальне замовлення: 2 шт
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MBR150RLG MBR150RLG ONSEMI mbr150-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
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1N4741ATR 1N4741ATR ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: THT
Tolerance: ±5%
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
на замовлення 1302 шт:
термін постачання 14-30 дні (днів)
42+10.74 грн
50+8.31 грн
57+7.31 грн
68+6.19 грн
100+4.24 грн
500+3.32 грн
1000+3.05 грн
Мінімальне замовлення: 42 шт
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GBPC3510 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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NTMFS3D2N10MDT1G ONSEMI ntmfs3d2n10md-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Power dissipation: 155W
Drain current: 142A
Drain-source voltage: 100V
Pulsed drain current: 879A
Kind of package: reel; tape
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NVMFS6H858NLT1G ONSEMI nvmfs6h858nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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NVMYS020N08LHTWG ONSEMI nvmys020n08lh-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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FDBL9403-F085T6 ONSEMI FDBL9403-F085T6-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 79.8W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCV8774CDT33RKG ONSEMI ncv8774c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3.3V
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NCV8774CDT50RKG ONSEMI ncv8774c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 5V
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MURS240T3G MURS240T3G ONSEMI murs230t3-d.pdf description Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Mounting: SMD
Reverse recovery time: 65ns
Max. forward voltage: 1.15V
Max. off-state voltage: 0.4kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
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NTJS3157NT1G NTJS3157NT1G ONSEMI ntjs3157n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
на замовлення 1996 шт:
термін постачання 14-30 дні (днів)
36+12.53 грн
41+10.30 грн
44+9.47 грн
100+6.23 грн
500+4.40 грн
1000+3.91 грн
1500+3.49 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
NTJS3151PT1G NTJS3151PT1G ONSEMI ntjs3151p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W
Mounting: SMD
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 60mΩ
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NLAS3158MNR2G ONSEMI nlas3158-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA
Operating temperature: -55...125°C
Technology: CMOS
Case: WDFN12
Kind of integrated circuit: multiplexer
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Type of integrated circuit: analog switch
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NTZS3151PT1G ONSEMI ntzs3151p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD
Case: SOT563F
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
On-state resistance: 0.15Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
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4N25M 4N25M ONSEMI 4N25SM.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
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NSVBC847BDW1T2G NSVBC847BDW1T2G ONSEMI bc846bdw1t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC847BTT1G ONSEMI bc847att1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC143ZDXV6T1G ONSEMI dtc143zd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC857BTT1G ONSEMI bc857btt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC114EDXV6T1G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC114YDXV6T1G ONSEMI dtc114yd-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC114YPDXV6T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC123JPDXV6T1G ONSEMI Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
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NSVBC124XPDXV6T1G ONSEMI dtc124xp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Quantity in set/package: 4000pcs.
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NSVBC143TPDXV6T1G ONSEMI dtc143tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC143ZPDXV6T1G ONSEMI dtc143zp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC144EDXV6T1G ONSEMI dtc144ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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NSVBC144EPDXV6T1G ONSEMI dtc144ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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NSVBC818-40LT1G NSVBC818-40LT1G ONSEMI bc818-40lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC846BM3T5G ONSEMI bc846bm3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC847BLT3G NSVBC847BLT3G ONSEMI bc846alt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC856BM3T5G NSVBC856BM3T5G ONSEMI bc856bm3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC857BLT3G NSVBC857BLT3G ONSEMI bc856alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC858AWT1G NSVBC858AWT1G ONSEMI BC856BWT1-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCH807-25LT1G NSVBCH807-25LT1G ONSEMI bch807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBCH817-40LT1G NSVBCH817-40LT1G ONSEMI bch817-16lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCW32LT1G NSVBCW32LT1G ONSEMI bcw32lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 32V
Application: automotive industry
Current gain: 200...450
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NCV1117ST12T3G NCV1117ST12T3G ONSEMI ncp1117-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FQP2N40-F080 FQP2N40-F080 ONSEMI fqp2n40-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 7.2A
Power dissipation: 40W
Gate charge: 5.5nC
Polarisation: unipolar
Drain current: 1.14A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 5.8Ω
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MC7915CD2TR4G MC7915CD2TR4G ONSEMI MC7900-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; MC7900
Output voltage: -15V
Operating temperature: 0...125°C
Kind of voltage regulator: fixed; linear
Manufacturer series: MC7900
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Kind of package: reel; tape
Case: D2PAK
Number of channels: 1
Tolerance: ±4%
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 800 шт
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NSM6056MT1G ONSEMI nsm6056m-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN + diode; bipolar; 40V; 0.6A; 0.38W; SC74-6
Mounting: SMD
Type of transistor: NPN + diode
Kind of package: reel; tape
Case: SC74-6
Power dissipation: 0.38W
Collector current: 0.6A
Collector-emitter voltage: 40V
Current gain: 300...100
Frequency: 250MHz
Polarisation: bipolar
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MC74AC32DR2G MC74AC32DR2G ONSEMI MC74AC32-D.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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MC74AC32DTR2G MC74AC32DTR2G ONSEMI MC74AC32-D.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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NVTFS4C06NTAG ONSEMI nvtfs4c06n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS4C06NT1G ONSEMI ntmfs4c06n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 69A; Idm: 476A; 30.5W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 69A
Pulsed drain current: 476A
Power dissipation: 30.5W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 1500 шт
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NTTFS4C06NTAG ONSEMI nttfs4c06n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 166A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 166A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C06NTWG ONSEMI nvtfs4c06n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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FJB102TM FJB102TM ONSEMI FJB102TM.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Mounting: SMD
Type of transistor: NPN
Collector current: 8A
Power dissipation: 80W
Collector-emitter voltage: 100V
Current gain: 200...20000
Polarisation: bipolar
Case: D2PAK
Kind of transistor: Darlington
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
4+117.23 грн
10+69.80 грн
50+54.68 грн
100+48.36 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SMMSD701T1G SMMSD701T1G ONSEMI mmsd301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
20+22.37 грн
26+16.12 грн
31+13.54 грн
100+10.80 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
NCV21872DMR2G NCV21872DMR2G ONSEMI ncs21871-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
на замовлення 2983 шт:
термін постачання 14-30 дні (днів)
10+44.74 грн
14+30.00 грн
25+27.34 грн
100+27.01 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FQA8N90C-F109 FQA8N90C-F109 ONSEMI fqa8n90c_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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FQB8N90CTM FQB8N90CTM ONSEMI fqb8n90ctm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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NCP1562ADBR2G NCP1562ADBR2G ONSEMI ncp1562a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: TSSOP16
Topology: forward
Operating temperature: -40...125°C
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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NCP1562ADR2G NCP1562ADR2G ONSEMI ncp1562a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: SO16
Topology: forward
Operating temperature: -40...125°C
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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NCP1562BDR2G NCP1562BDR2G ONSEMI ncp1562a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: SO16
Topology: forward
Operating temperature: -40...125°C
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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SZBZX84C27LT1G SZBZX84C27LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
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FDBL86361-F085 ONSEMI fdbl86361_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Drain-source voltage: 60V
Drain current: 300A
On-state resistance: 3.1mΩ
Power dissipation: 429W
Gate-source voltage: ±20V
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Case: H-PSOF8L
Type of transistor: N-MOSFET
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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FDBL0150N80 ONSEMI fdbl0150n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Drain-source voltage: 80V
Drain current: 300A
On-state resistance: 4.6Ω
Power dissipation: 429W
Gate-source voltage: ±20V
Mounting: SMD
Polarisation: unipolar
Gate charge: 172nC
Kind of channel: enhancement
Case: H-PSOF8L
Type of transistor: N-MOSFET
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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MURA205T3G mura205t3-d.pdf
MURA205T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
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MJH11021G MJH11017G.PDF
MJH11021G
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+289.18 грн
10+255.11 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MBR150RLG mbr150-d.pdf
MBR150RLG
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
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1N4741ATR 1N47xxA.PDF
1N4741ATR
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: THT
Tolerance: ±5%
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
на замовлення 1302 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
42+10.74 грн
50+8.31 грн
57+7.31 грн
68+6.19 грн
100+4.24 грн
500+3.32 грн
1000+3.05 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
GBPC3510 GBPCxx.PDF
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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NTMFS3D2N10MDT1G ntmfs3d2n10md-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Power dissipation: 155W
Drain current: 142A
Drain-source voltage: 100V
Pulsed drain current: 879A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFS6H858NLT1G nvmfs6h858nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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NVMYS020N08LHTWG nvmys020n08lh-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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FDBL9403-F085T6 FDBL9403-F085T6-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 79.8W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
NCV8774CDT33RKG ncv8774c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3.3V
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NCV8774CDT50RKG ncv8774c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 5V
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MURS240T3G description murs230t3-d.pdf
MURS240T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Mounting: SMD
Reverse recovery time: 65ns
Max. forward voltage: 1.15V
Max. off-state voltage: 0.4kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
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NTJS3157NT1G ntjs3157n-d.pdf
NTJS3157NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
на замовлення 1996 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.53 грн
41+10.30 грн
44+9.47 грн
100+6.23 грн
500+4.40 грн
1000+3.91 грн
1500+3.49 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
NTJS3151PT1G ntjs3151p-d.pdf
NTJS3151PT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W
Mounting: SMD
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 60mΩ
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NLAS3158MNR2G nlas3158-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA
Operating temperature: -55...125°C
Technology: CMOS
Case: WDFN12
Kind of integrated circuit: multiplexer
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Type of integrated circuit: analog switch
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Мінімальне замовлення: 3 шт
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NTZS3151PT1G ntzs3151p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD
Case: SOT563F
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
On-state resistance: 0.15Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
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4N25M 4N25SM.pdf
4N25M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
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Мінімальне замовлення: 2 шт
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NSVBC847BDW1T2G bc846bdw1t1-d.pdf
NSVBC847BDW1T2G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC847BTT1G bc847att1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC143ZDXV6T1G dtc143zd-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC857BTT1G bc857btt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC114EDXV6T1G dtc114ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC114YDXV6T1G dtc114yd-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC114YPDXV6T1G dtc114yp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC123JPDXV6T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
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NSVBC124XPDXV6T1G dtc124xp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Quantity in set/package: 4000pcs.
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NSVBC143TPDXV6T1G dtc143tp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC143ZPDXV6T1G dtc143zp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC144EDXV6T1G dtc144ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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NSVBC144EPDXV6T1G dtc144ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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NSVBC818-40LT1G bc818-40lt1-d.pdf
NSVBC818-40LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC846BM3T5G bc846bm3-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC847BLT3G bc846alt1-d.pdf
NSVBC847BLT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC856BM3T5G bc856bm3-d.pdf
NSVBC856BM3T5G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC857BLT3G bc856alt1-d.pdf
NSVBC857BLT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC858AWT1G BC856BWT1-D.PDF
NSVBC858AWT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCH807-25LT1G bch807-16lt1-d.pdf
NSVBCH807-25LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBCH817-40LT1G bch817-16lt1-d.pdf
NSVBCH817-40LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCW32LT1G bcw32lt1-d.pdf
NSVBCW32LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 32V
Application: automotive industry
Current gain: 200...450
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NCV1117ST12T3G ncp1117-d.pdf
NCV1117ST12T3G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FQP2N40-F080 fqp2n40-d.pdf
FQP2N40-F080
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 7.2A
Power dissipation: 40W
Gate charge: 5.5nC
Polarisation: unipolar
Drain current: 1.14A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 5.8Ω
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MC7915CD2TR4G MC7900-D.PDF
MC7915CD2TR4G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; MC7900
Output voltage: -15V
Operating temperature: 0...125°C
Kind of voltage regulator: fixed; linear
Manufacturer series: MC7900
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Kind of package: reel; tape
Case: D2PAK
Number of channels: 1
Tolerance: ±4%
Mounting: SMD
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Мінімальне замовлення: 800 шт
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NSM6056MT1G nsm6056m-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN + diode; bipolar; 40V; 0.6A; 0.38W; SC74-6
Mounting: SMD
Type of transistor: NPN + diode
Kind of package: reel; tape
Case: SC74-6
Power dissipation: 0.38W
Collector current: 0.6A
Collector-emitter voltage: 40V
Current gain: 300...100
Frequency: 250MHz
Polarisation: bipolar
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MC74AC32DR2G MC74AC32-D.pdf
MC74AC32DR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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MC74AC32DTR2G MC74AC32-D.pdf
MC74AC32DTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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NVTFS4C06NTAG nvtfs4c06n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS4C06NT1G ntmfs4c06n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 69A; Idm: 476A; 30.5W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 69A
Pulsed drain current: 476A
Power dissipation: 30.5W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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NTTFS4C06NTAG nttfs4c06n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 166A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 166A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C06NTWG nvtfs4c06n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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FJB102TM FJB102TM.pdf
FJB102TM
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Mounting: SMD
Type of transistor: NPN
Collector current: 8A
Power dissipation: 80W
Collector-emitter voltage: 100V
Current gain: 200...20000
Polarisation: bipolar
Case: D2PAK
Kind of transistor: Darlington
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+117.23 грн
10+69.80 грн
50+54.68 грн
100+48.36 грн
Мінімальне замовлення: 4 шт
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SMMSD701T1G mmsd301t1-d.pdf
SMMSD701T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.37 грн
26+16.12 грн
31+13.54 грн
100+10.80 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
NCV21872DMR2G ncs21871-d.pdf
NCV21872DMR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
на замовлення 2983 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+44.74 грн
14+30.00 грн
25+27.34 грн
100+27.01 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FQA8N90C-F109 fqa8n90c_f109-d.pdf
FQA8N90C-F109
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FQB8N90CTM fqb8n90ctm-d.pdf
FQB8N90CTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
товару немає в наявності
В кошику  од. на суму  грн.
NCP1562ADBR2G ncp1562a-d.pdf
NCP1562ADBR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: TSSOP16
Topology: forward
Operating temperature: -40...125°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NCP1562ADR2G ncp1562a-d.pdf
NCP1562ADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: SO16
Topology: forward
Operating temperature: -40...125°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NCP1562BDR2G ncp1562a-d.pdf
NCP1562BDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: SO16
Topology: forward
Operating temperature: -40...125°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
SZBZX84C27LT1G BZX84B_BZX84C.PDF
SZBZX84C27LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
FDBL86361-F085 fdbl86361_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Drain-source voltage: 60V
Drain current: 300A
On-state resistance: 3.1mΩ
Power dissipation: 429W
Gate-source voltage: ±20V
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Case: H-PSOF8L
Type of transistor: N-MOSFET
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
FDBL0150N80 fdbl0150n80-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Drain-source voltage: 80V
Drain current: 300A
On-state resistance: 4.6Ω
Power dissipation: 429W
Gate-source voltage: ±20V
Mounting: SMD
Polarisation: unipolar
Gate charge: 172nC
Kind of channel: enhancement
Case: H-PSOF8L
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
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