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NCP163ASN250T1G NCP163ASN250T1G ONSEMI ncp163-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 250mA; SOT23-5; SMD
Output current: 0.25A
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output voltage: 2.5V
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP163
Input voltage: 2.2...5.5V
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NCP163ASN280T1G NCP163ASN280T1G ONSEMI ncp163-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; SOT23-5; SMD
Output current: 0.25A
Type of integrated circuit: voltage regulator
Voltage drop: 0.19V
Operating temperature: -40...125°C
Output voltage: 2.8V
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP163
Input voltage: 2.2...5.5V
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NCP1631DR2G NCP1631DR2G ONSEMI ncp1631-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16
Output current: -500...800mA
Type of integrated circuit: PMIC
Operating temperature: -55...125°C
Case: SO16
Operating voltage: 10...20V DC
Mounting: SMD
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 Мінімальне замовлення: 2500 шт
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NCP1632DR2G NCP1632DR2G ONSEMI ncp1632-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16
Output current: -500...800mA
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: SO16
Operating voltage: 10...20V DC
Mounting: SMD
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NVMFS5A160PLZT1G NVMFS5A160PLZT1G ONSEMI nvmfs5a160plz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
On-state resistance: 7.7mΩ
Gate-source voltage: ±20V
Drain current: 100A
Power dissipation: 200W
Kind of channel: enhancement
Type of transistor: P-MOSFET
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 Мінімальне замовлення: 1500 шт
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ESD7504MUTAG ONSEMI ESD7504-D.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; unidirectional; ESD; uDFN10; Ch: 4; reel,tape
Breakdown voltage: 5V
Version: ESD
Application: HDMI
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: uDFN10
Capacitance: 0.55pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
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LM393M LM393M ONSEMI LM2903.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Kind of output: open collector
Input offset current: 150nA
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 Мінімальне замовлення: 3 шт
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MBRB1545CTT4G MBRB1545CTT4G ONSEMI mbrb1545ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 15A
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SBRB1545CTG SBRB1545CTG ONSEMI mbrb1545ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. load current: 15A
Max. forward impulse current: 150A
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HUF75345P3 HUF75345P3 ONSEMI HUF75345.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Gate charge: 275nC
On-state resistance: 7mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 325W
на замовлення 142 шт:
термін постачання 14-30 дні (днів)
2+229.40 грн
3+189.53 грн
10+152.63 грн
50+121.60 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
HUF75321P3 HUF75321P3 ONSEMI huf75321p3-d.pdf FAIRS45727-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Gate charge: 44nC
On-state resistance: 34mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 31A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 93W
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
5+107.48 грн
10+72.96 грн
Мінімальне замовлення: 5 шт
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HUF75329D3ST ONSEMI huf75329d3s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 128W; TO252AA
Gate charge: 50nC
On-state resistance: 26mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 20A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO252AA
Drain-source voltage: 55V
Power dissipation: 128W
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 Мінімальне замовлення: 2500 шт
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HUF75321D3ST ONSEMI HUF75321D3ST-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 93W; TO252AA
Gate charge: 36nC
On-state resistance: 36mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 20A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO252AA
Drain-source voltage: 55V
Power dissipation: 93W
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 Мінімальне замовлення: 2500 шт
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HUF75345G3 ONSEMI huf75345s3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO247-3
Gate charge: 0.22µC
On-state resistance: 7mΩ
Polarisation: unipolar
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO247-3
Drain-source voltage: 55V
Power dissipation: 325W
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HUF75345S3ST ONSEMI huf75345s3s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; D2PAK-3
Gate charge: 0.22µC
On-state resistance: 7mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: D2PAK-3
Drain-source voltage: 55V
Power dissipation: 325W
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 Мінімальне замовлення: 800 шт
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H11F1SM ONSEMI h11f3m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 4.17kV
Case: PDIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
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 Мінімальне замовлення: 1000 шт
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H11F1SR2M ONSEMI h11f3m-d.pdf FAIR-S-A0002366322-1.pdf?t.download=true&u=5oefqw Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
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 Мінімальне замовлення: 1000 шт
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6N137M 6N137M ONSEMI 6N137.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
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 Мінімальне замовлення: 3 шт
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NCS21674DMG100R2G ONSEMI ncs21673-d.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Ch: 2; 2.7÷5.5VDC; Micro8
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual; 2
Type of integrated circuit: instrumentation amplifier
Case: Micro8
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MURA205T3G MURA205T3G ONSEMI mura205t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
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MJH11021G MJH11021G ONSEMI MJH11017G.PDF Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Mounting: THT
Collector-emitter voltage: 250V
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Kind of package: tube
Case: TO247-3
Collector current: 15A
на замовлення 157 шт:
термін постачання 14-30 дні (днів)
2+306.95 грн
10+257.47 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MBR150RLG MBR150RLG ONSEMI mbr150-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
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1N4741ATR 1N4741ATR ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
на замовлення 1281 шт:
термін постачання 14-30 дні (днів)
32+14.45 грн
43+9.90 грн
52+8.13 грн
63+6.75 грн
77+5.47 грн
100+4.86 грн
500+3.75 грн
Мінімальне замовлення: 32 шт
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GBPC3510 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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NTMFS3D2N10MDT1G ONSEMI ntmfs3d2n10md-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Power dissipation: 155W
Drain current: 142A
Drain-source voltage: 100V
Pulsed drain current: 879A
Kind of package: reel; tape
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 Мінімальне замовлення: 1500 шт
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NVMFS6H858NLT1G ONSEMI nvmfs6h858nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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NVMYS020N08LHTWG ONSEMI nvmys020n08lh-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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FDBL9403-F085T6 ONSEMI FDBL9403-F085T6-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 79.8W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
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 Мінімальне замовлення: 2000 шт
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NCV8774CDT33RKG ONSEMI ncv8774c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3.3V
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NCV8774CDT50RKG ONSEMI ncv8774c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 5V
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MURS240T3G MURS240T3G ONSEMI murs230t3-d.pdf description Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
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NTJS3157NT1G NTJS3157NT1G ONSEMI ntjs3157n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
на замовлення 1996 шт:
термін постачання 14-30 дні (днів)
36+12.64 грн
41+10.40 грн
44+9.56 грн
100+6.29 грн
500+4.44 грн
1000+3.94 грн
1500+3.52 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
NTJS3151PT1G NTJS3151PT1G ONSEMI ntjs3151p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W
Mounting: SMD
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 60mΩ
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NLAS3158MNR2G ONSEMI nlas3158-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA
Operating temperature: -55...125°C
Technology: CMOS
Case: WDFN12
Kind of integrated circuit: multiplexer
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Type of integrated circuit: analog switch
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 Мінімальне замовлення: 3 шт
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NTZS3151PT1G ONSEMI ntzs3151p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD
Case: SOT563F
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
On-state resistance: 0.15Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
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4N25M 4N25M ONSEMI 4N25SM.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
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 Мінімальне замовлення: 2 шт
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NSVBC847BDW1T2G NSVBC847BDW1T2G ONSEMI bc846bdw1t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBC847BTT1G ONSEMI bc847att1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Power dissipation: 0.2W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 200...450
Kind of package: reel; tape
Case: SC75; SOT416
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
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NSVBC143ZDXV6T1G ONSEMI dtc143zd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC857BTT1G ONSEMI bc857btt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Power dissipation: 0.2W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Current gain: 220...475
Kind of package: reel; tape
Case: SC75; SOT416
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
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NSVBC114EDXV6T1G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC114YDXV6T1G ONSEMI dtc114yd-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC114YPDXV6T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC123JPDXV6T1G ONSEMI Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
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NSVBC124XPDXV6T1G ONSEMI dtc124xp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Quantity in set/package: 4000pcs.
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NSVBC143TPDXV6T1G ONSEMI dtc143tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC143ZPDXV6T1G ONSEMI dtc143zp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC144EDXV6T1G ONSEMI dtc144ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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NSVBC144EPDXV6T1G ONSEMI dtc144ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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NSVBC818-40LT1G NSVBC818-40LT1G ONSEMI bc818-40lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBC846BM3T5G ONSEMI bc846bm3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC847BLT3G NSVBC847BLT3G ONSEMI bc846alt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC856BM3T5G NSVBC856BM3T5G ONSEMI bc856bm3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC857BLT3G NSVBC857BLT3G ONSEMI bc856alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC858AWT1G NSVBC858AWT1G ONSEMI BC856BWT1-D.PDF bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCH807-25LT1G NSVBCH807-25LT1G ONSEMI bch807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCH817-40LT1G NSVBCH817-40LT1G ONSEMI bch817-16lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCW32LT1G NSVBCW32LT1G ONSEMI bcw32lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 32V
Application: automotive industry
Current gain: 200...450
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NCV1117ST12T3G NCV1117ST12T3G ONSEMI ncp1117-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FQP2N40-F080 FQP2N40-F080 ONSEMI fqp2n40-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 7.2A
Power dissipation: 40W
Gate charge: 5.5nC
Polarisation: unipolar
Drain current: 1.14A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 5.8Ω
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NCP163ASN250T1G ncp163-d.pdf
NCP163ASN250T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 250mA; SOT23-5; SMD
Output current: 0.25A
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output voltage: 2.5V
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP163
Input voltage: 2.2...5.5V
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NCP163ASN280T1G ncp163-d.pdf
NCP163ASN280T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; SOT23-5; SMD
Output current: 0.25A
Type of integrated circuit: voltage regulator
Voltage drop: 0.19V
Operating temperature: -40...125°C
Output voltage: 2.8V
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP163
Input voltage: 2.2...5.5V
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NCP1631DR2G ncp1631-d.pdf
NCP1631DR2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16
Output current: -500...800mA
Type of integrated circuit: PMIC
Operating temperature: -55...125°C
Case: SO16
Operating voltage: 10...20V DC
Mounting: SMD
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Мінімальне замовлення: 2500 шт
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NCP1632DR2G ncp1632-d.pdf
NCP1632DR2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16
Output current: -500...800mA
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: SO16
Operating voltage: 10...20V DC
Mounting: SMD
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NVMFS5A160PLZT1G nvmfs5a160plz-d.pdf
NVMFS5A160PLZT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
On-state resistance: 7.7mΩ
Gate-source voltage: ±20V
Drain current: 100A
Power dissipation: 200W
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
Мінімальне замовлення: 1500 шт
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ESD7504MUTAG ESD7504-D.PDF
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; unidirectional; ESD; uDFN10; Ch: 4; reel,tape
Breakdown voltage: 5V
Version: ESD
Application: HDMI
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: uDFN10
Capacitance: 0.55pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
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LM393M LM2903.pdf
LM393M
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Kind of output: open collector
Input offset current: 150nA
товару немає в наявності
Мінімальне замовлення: 3 шт
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MBRB1545CTT4G mbrb1545ct-d.pdf
MBRB1545CTT4G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 15A
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SBRB1545CTG mbrb1545ct-d.pdf
SBRB1545CTG
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. load current: 15A
Max. forward impulse current: 150A
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HUF75345P3 HUF75345.pdf
HUF75345P3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Gate charge: 275nC
On-state resistance: 7mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 325W
на замовлення 142 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+229.40 грн
3+189.53 грн
10+152.63 грн
50+121.60 грн
Мінімальне замовлення: 2 шт
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HUF75321P3 huf75321p3-d.pdf FAIRS45727-1.pdf?t.download=true&u=5oefqw
HUF75321P3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Gate charge: 44nC
On-state resistance: 34mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 31A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 93W
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+107.48 грн
10+72.96 грн
Мінімальне замовлення: 5 шт
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HUF75329D3ST huf75329d3s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 128W; TO252AA
Gate charge: 50nC
On-state resistance: 26mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 20A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO252AA
Drain-source voltage: 55V
Power dissipation: 128W
товару немає в наявності
Мінімальне замовлення: 2500 шт
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HUF75321D3ST HUF75321D3ST-D.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 93W; TO252AA
Gate charge: 36nC
On-state resistance: 36mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 20A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO252AA
Drain-source voltage: 55V
Power dissipation: 93W
товару немає в наявності
Мінімальне замовлення: 2500 шт
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HUF75345G3 huf75345s3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO247-3
Gate charge: 0.22µC
On-state resistance: 7mΩ
Polarisation: unipolar
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO247-3
Drain-source voltage: 55V
Power dissipation: 325W
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HUF75345S3ST huf75345s3s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; D2PAK-3
Gate charge: 0.22µC
On-state resistance: 7mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: D2PAK-3
Drain-source voltage: 55V
Power dissipation: 325W
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Мінімальне замовлення: 800 шт
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H11F1SM h11f3m-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 4.17kV
Case: PDIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
товару немає в наявності
Мінімальне замовлення: 1000 шт
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H11F1SR2M h11f3m-d.pdf FAIR-S-A0002366322-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
6N137M 6N137.pdf
6N137M
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
товару немає в наявності
Мінімальне замовлення: 3 шт
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NCS21674DMG100R2G ncs21673-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Ch: 2; 2.7÷5.5VDC; Micro8
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual; 2
Type of integrated circuit: instrumentation amplifier
Case: Micro8
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MURA205T3G mura205t3-d.pdf
MURA205T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
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MJH11021G MJH11017G.PDF
MJH11021G
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Mounting: THT
Collector-emitter voltage: 250V
Power dissipation: 150W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Kind of package: tube
Case: TO247-3
Collector current: 15A
на замовлення 157 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+306.95 грн
10+257.47 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MBR150RLG mbr150-d.pdf
MBR150RLG
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
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1N4741ATR 1N47xxA.PDF
1N4741ATR
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
на замовлення 1281 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
32+14.45 грн
43+9.90 грн
52+8.13 грн
63+6.75 грн
77+5.47 грн
100+4.86 грн
500+3.75 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
GBPC3510 GBPCxx.PDF
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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NTMFS3D2N10MDT1G ntmfs3d2n10md-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Power dissipation: 155W
Drain current: 142A
Drain-source voltage: 100V
Pulsed drain current: 879A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1500 шт
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NVMFS6H858NLT1G nvmfs6h858nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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NVMYS020N08LHTWG nvmys020n08lh-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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FDBL9403-F085T6 FDBL9403-F085T6-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 79.8W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
NCV8774CDT33RKG ncv8774c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3.3V
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NCV8774CDT50RKG ncv8774c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 5V
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MURS240T3G description murs230t3-d.pdf
MURS240T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 65ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
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NTJS3157NT1G ntjs3157n-d.pdf
NTJS3157NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
на замовлення 1996 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.64 грн
41+10.40 грн
44+9.56 грн
100+6.29 грн
500+4.44 грн
1000+3.94 грн
1500+3.52 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
NTJS3151PT1G ntjs3151p-d.pdf
NTJS3151PT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W
Mounting: SMD
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 60mΩ
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NLAS3158MNR2G nlas3158-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA
Operating temperature: -55...125°C
Technology: CMOS
Case: WDFN12
Kind of integrated circuit: multiplexer
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Type of integrated circuit: analog switch
товару немає в наявності
Мінімальне замовлення: 3 шт
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NTZS3151PT1G ntzs3151p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD
Case: SOT563F
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
On-state resistance: 0.15Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
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4N25M 4N25SM.pdf
4N25M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
товару немає в наявності
Мінімальне замовлення: 2 шт
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NSVBC847BDW1T2G bc846bdw1t1-d.pdf
NSVBC847BDW1T2G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBC847BTT1G bc847att1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Power dissipation: 0.2W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 200...450
Kind of package: reel; tape
Case: SC75; SOT416
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
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NSVBC143ZDXV6T1G dtc143zd-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC857BTT1G bc857btt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Power dissipation: 0.2W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Current gain: 220...475
Kind of package: reel; tape
Case: SC75; SOT416
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
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NSVBC114EDXV6T1G dtc114ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC114YDXV6T1G dtc114yd-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC114YPDXV6T1G dtc114yp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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NSVBC123JPDXV6T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
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NSVBC124XPDXV6T1G dtc124xp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Quantity in set/package: 4000pcs.
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NSVBC143TPDXV6T1G dtc143tp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC143ZPDXV6T1G dtc143zp-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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NSVBC144EDXV6T1G dtc144ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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NSVBC144EPDXV6T1G dtc144ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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NSVBC818-40LT1G bc818-40lt1-d.pdf
NSVBC818-40LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBC846BM3T5G bc846bm3-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC847BLT3G bc846alt1-d.pdf
NSVBC847BLT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC856BM3T5G bc856bm3-d.pdf
NSVBC856BM3T5G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC857BLT3G bc856alt1-d.pdf
NSVBC857BLT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NSVBC858AWT1G BC856BWT1-D.PDF bc856bwt1-d.pdf
NSVBC858AWT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCH807-25LT1G bch807-16lt1-d.pdf
NSVBCH807-25LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCH817-40LT1G bch817-16lt1-d.pdf
NSVBCH817-40LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBCW32LT1G bcw32lt1-d.pdf
NSVBCW32LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 32V
Application: automotive industry
Current gain: 200...450
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NCV1117ST12T3G ncp1117-d.pdf
NCV1117ST12T3G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FQP2N40-F080 fqp2n40-d.pdf
FQP2N40-F080
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 7.2A
Power dissipation: 40W
Gate charge: 5.5nC
Polarisation: unipolar
Drain current: 1.14A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 5.8Ω
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