| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| FODM217DR2V | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 300-600%@5mA Collector-emitter voltage: 80V Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FODM217BR2V | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 130-260%@5mA Collector-emitter voltage: 80V Case: MFP4 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FODM217DR2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 300-600%@5mA Collector-emitter voltage: 80V Case: MFP4 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FODM217AR2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 80-160%@5mA Collector-emitter voltage: 80V Case: MFP4 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FODM217DV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 300-600%@5mA Collector-emitter voltage: 80V Case: MFP4 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: FODM217 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14532BDG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16 Operating temperature: -55...125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Technology: CMOS Number of inputs: 9 Kind of package: tube Case: SOIC16 Family: HEF4000B Kind of integrated circuit: 8bit; priority encoder Number of channels: 1 |
на замовлення 89 шт: термін постачання 14-30 дні (днів) |
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MMBD914LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1V Kind of package: reel; tape |
на замовлення 6275 шт: термін постачання 14-30 дні (днів) |
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SMMBD914LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMMBD914LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MBR130LSFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.3V Max. forward impulse current: 40A Kind of package: reel; tape Max. load current: 2A |
на замовлення 1305 шт: термін постачання 14-30 дні (днів) |
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FDN336P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.3A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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74VHC123AM | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74VHC123AMTC | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Kind of package: tube Quiescent current: 40µA Manufacturer series: VHC |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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MBRM140T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; POWERMITE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: POWERMITE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.88V Max. load current: 2A Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 2921 шт: термін постачання 14-30 дні (днів) |
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MC74LCX158DG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; SOIC16 Case: SOIC16 Mounting: SMD Number of channels: 4 Manufacturer series: LCX Type of integrated circuit: digital Operating temperature: -40...85°C Integrated circuit features: tolerates a voltage of 5V on the inputs Technology: CMOS Number of inputs: 2 Kind of package: tube Family: LCX Kind of integrated circuit: inverting; multiplexer Supply voltage: 1.5...3.6V DC |
на замовлення 192 шт: термін постачання 14-30 дні (днів) |
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MC74LCX158DTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16 Case: TSSOP16 Mounting: SMD Number of channels: 4 Manufacturer series: LCX Type of integrated circuit: digital Operating temperature: -40...85°C Integrated circuit features: tolerates a voltage of 5V on the inputs Technology: CMOS Number of inputs: 2 Kind of package: tube Family: LCX Kind of integrated circuit: inverting; multiplexer Supply voltage: 1.5...3.6V DC |
на замовлення 192 шт: термін постачання 14-30 дні (днів) |
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MC74LCX158DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; SOIC16 Case: SOIC16 Mounting: SMD Number of channels: 4 Manufacturer series: LCX Type of integrated circuit: digital Operating temperature: -40...85°C Integrated circuit features: tolerates a voltage of 5V on the inputs Technology: CMOS Number of inputs: 2 Kind of package: reel; tape Family: LCX Kind of integrated circuit: inverting; multiplexer Supply voltage: 1.5...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74LCX158DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16 Case: TSSOP16 Mounting: SMD Number of channels: 4 Manufacturer series: LCX Type of integrated circuit: digital Operating temperature: -40...85°C Integrated circuit features: tolerates a voltage of 5V on the inputs Technology: CMOS Number of inputs: 2 Kind of package: reel; tape Family: LCX Kind of integrated circuit: inverting; multiplexer Supply voltage: 1.5...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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74LCX08MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Family: LCX |
на замовлення 1334 шт: термін постачання 14-30 дні (днів) |
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NCP5500DADJR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 0.5A; SO8 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.23V Output voltage: 1.25...5V Output current: 0.5A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 2.5...16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP5500DTADJRKG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 0.5A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.23V Output voltage: 1.25...5V Output current: 0.5A Case: DPAK4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 2.5...16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FZT649 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN Type of transistor: NPN |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NSS20601CF8T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 6A; 1.4W; ChipFET8 Mounting: SMD Collector-emitter voltage: 20V Power dissipation: 1.4W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 200 Kind of package: reel; tape Case: ChipFET8 Frequency: 140MHz Collector current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| H11L3SM | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 4.17kV Transfer rate: 1Mbps Case: PDIP6 Turn-on time: 1µs Turn-off time: 1.2µs Max. off-state voltage: 6V Output voltage: 0...16V Manufacturer series: H11L3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMT045N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 197A Power dissipation: 94W Case: TDFN4 Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMT061N60S5F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 41A Pulsed drain current: 146A Power dissipation: 255W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 61mΩ Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMT064N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 112A Power dissipation: 260W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMT090N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMT095N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCV2001SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 1; 0.9÷7VDC; SOT23-5; 7.5mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 0.9...7V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 1.6V/μs Integrated circuit features: rail-to-rail Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 10pA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTBL045N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 51A Pulsed drain current: 182A Power dissipation: 174W Case: H-PSOF8L Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTBL050N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 49A Pulsed drain current: 132A Power dissipation: 305W Case: H-PSOF8L Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTBL070N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L Drain-source voltage: 650V Drain current: 44A Case: H-PSOF8L Polarisation: unipolar On-state resistance: 70mΩ Pulsed drain current: 110A Power dissipation: 312W Kind of channel: enhancement Gate charge: 82nC Gate-source voltage: ±30V Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NCV1117DT33T5G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 3.3V Output current: 1.5A Case: DPAK Mounting: SMD Manufacturer series: NCV1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...20V Application: automotive industry |
на замовлення 2183 шт: термін постачання 14-30 дні (днів) |
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| GBPC1506 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GBPC1506W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZMMBZ15VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SC70; Ch: 2 Application: automotive industry Max. off-state voltage: 12V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMS037N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8 Gate-source voltage: ±20V Kind of package: reel; tape Case: PQFN8 On-state resistance: 3.7mΩ Mounting: SMD Pulsed drain current: 400A Power dissipation: 104.2W Gate charge: 0.1µC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 75V Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV7342D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: CAN transceiver; 4.5÷5.5VDC; CAN; SMD; SO8; Ch: 1; reel,tape Mounting: SMD Operating temperature: -40...125°C Type of integrated circuit: CAN transceiver Application: automotive industry Kind of package: reel; tape Case: SO8 Interface: CAN Number of channels: 1 Supply voltage: 4.5...5.5V DC |
на замовлення 2557 шт: термін постачання 14-30 дні (днів) |
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MC33072DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
на замовлення 3526 шт: термін постачання 14-30 дні (днів) |
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MC33072ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
на замовлення 2056 шт: термін постачання 14-30 дні (днів) |
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MC33202DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC Type of integrated circuit: operational amplifier Bandwidth: 2.2MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail Input offset voltage: 8mV Kind of package: reel; tape |
на замовлення 2973 шт: термін постачання 14-30 дні (днів) |
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NC7WZ16P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: SC70-6 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Quiescent current: 10µA |
на замовлення 9000 шт: термін постачання 14-30 дні (днів) |
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NC7WV16P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 0.9uA Mounting: SMD Supply voltage: 0.9...3.6V DC Type of integrated circuit: digital Operating temperature: -40...85°C Technology: CMOS Quiescent current: 0.9µA Kind of package: reel; tape Case: SC70-6 Kind of integrated circuit: buffer; non-inverting Number of channels: 2 |
на замовлення 1086 шт: термін постачання 14-30 дні (днів) |
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MUR820G | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 100A Case: TO220AC Kind of package: tube Max. forward voltage: 0.975V Max. load current: 16A Heatsink thickness: max. 1.4mm Reverse recovery time: 35ns |
на замовлення 339 шт: термін постачання 14-30 дні (днів) |
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FSA4159P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1 Mounting: SMD Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch Operating temperature: -40...85°C Resistance: 3.5Ω Number of inputs: 1 Output configuration: SPDT Case: SC70-6; SC88; SOT363 Number of outputs: 2 Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C2V4ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C2V4LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 42000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT365ADR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HCT365ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| FDI045N10A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 164A Power dissipation: 263W Case: I2PAK Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 656A Gate charge: 54nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
FDP045N10A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 164A Pulsed drain current: 656A Power dissipation: 263W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
FDPF045N10A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 268A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 67A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 268A Gate charge: 57nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SB10-05P-TD-E | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape Mounting: SMD Case: SOT89 Max. forward voltage: 0.55V Max. off-state voltage: 50V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN3224TM1X-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FAN3224TMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8 Mounting: SMD Supply voltage: 4.5...18V DC Output current: -5...5A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Technology: MillerDrive™ Pulse fall time: 9ns Kind of package: reel; tape Case: WDFN8 Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 2 Impulse rise time: 12ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN3224TUM1X-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8-EP Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8-EP Output current: -5...5A Number of channels: 2 Supply voltage: 9...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FAN3224TUMX-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 9...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LM2575D2T-5R4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4934G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59-10; DO41 Kind of package: bulk Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. |
| FODM217DR2V |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: FODM217
товару немає в наявності
В кошику
од. на суму грн.
| FODM217BR2V |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
товару немає в наявності
В кошику
од. на суму грн.
| FODM217DR2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
товару немає в наявності
В кошику
од. на суму грн.
| FODM217AR2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
товару немає в наявності
В кошику
од. на суму грн.
| FODM217DV |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
товару немає в наявності
В кошику
од. на суму грн.
| MC14532BDG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 9
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: 8bit; priority encoder
Number of channels: 1
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 9
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: 8bit; priority encoder
Number of channels: 1
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 85.80 грн |
| 10+ | 72.12 грн |
| 48+ | 62.90 грн |
| MMBD914LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
на замовлення 6275 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 88+ | 4.78 грн |
| 129+ | 3.27 грн |
| 152+ | 2.78 грн |
| 500+ | 1.92 грн |
| 1000+ | 1.67 грн |
| 1500+ | 1.54 грн |
| 3000+ | 1.36 грн |
| 6000+ | 1.22 грн |
| SMMBD914LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SMMBD914LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MBR130LSFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. load current: 2A
на замовлення 1305 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 37.03 грн |
| 17+ | 25.66 грн |
| 20+ | 22.06 грн |
| 50+ | 15.43 грн |
| 100+ | 13.50 грн |
| 500+ | 10.15 грн |
| 1000+ | 9.14 грн |
| FDN336P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.48 грн |
| 12+ | 35.73 грн |
| 14+ | 30.53 грн |
| 50+ | 21.05 грн |
| 100+ | 18.20 грн |
| 500+ | 13.50 грн |
| 1500+ | 12.58 грн |
| 74VHC123AM |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Manufacturer series: VHC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Manufacturer series: VHC
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В кошику
од. на суму грн.
| 74VHC123AMTC |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
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Мінімальне замовлення: 3 шт
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| MBRM140T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.88V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.88V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 2921 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.77 грн |
| 27+ | 15.60 грн |
| 30+ | 14.26 грн |
| 50+ | 11.99 грн |
| 100+ | 11.41 грн |
| 500+ | 10.40 грн |
| 1000+ | 9.73 грн |
| 1500+ | 9.31 грн |
| MC74LCX158DG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; SOIC16
Case: SOIC16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 2
Kind of package: tube
Family: LCX
Kind of integrated circuit: inverting; multiplexer
Supply voltage: 1.5...3.6V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; SOIC16
Case: SOIC16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 2
Kind of package: tube
Family: LCX
Kind of integrated circuit: inverting; multiplexer
Supply voltage: 1.5...3.6V DC
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 98.44 грн |
| 10+ | 56.94 грн |
| 25+ | 43.95 грн |
| 48+ | 36.98 грн |
| 96+ | 31.62 грн |
| MC74LCX158DTG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Case: TSSOP16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 2
Kind of package: tube
Family: LCX
Kind of integrated circuit: inverting; multiplexer
Supply voltage: 1.5...3.6V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Case: TSSOP16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 2
Kind of package: tube
Family: LCX
Kind of integrated circuit: inverting; multiplexer
Supply voltage: 1.5...3.6V DC
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.80 грн |
| 10+ | 49.98 грн |
| 48+ | 41.51 грн |
| 96+ | 37.32 грн |
| MC74LCX158DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; SOIC16
Case: SOIC16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Family: LCX
Kind of integrated circuit: inverting; multiplexer
Supply voltage: 1.5...3.6V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; SOIC16
Case: SOIC16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Family: LCX
Kind of integrated circuit: inverting; multiplexer
Supply voltage: 1.5...3.6V DC
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Мінімальне замовлення: 2500 шт
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| MC74LCX158DTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Case: TSSOP16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Family: LCX
Kind of integrated circuit: inverting; multiplexer
Supply voltage: 1.5...3.6V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Case: TSSOP16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Family: LCX
Kind of integrated circuit: inverting; multiplexer
Supply voltage: 1.5...3.6V DC
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Мінімальне замовлення: 2500 шт
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| 74LCX08MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
на замовлення 1334 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.48 грн |
| 25+ | 17.11 грн |
| 28+ | 15.35 грн |
| NCP5500DADJR2G |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 0.5A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.23V
Output voltage: 1.25...5V
Output current: 0.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 0.5A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.23V
Output voltage: 1.25...5V
Output current: 0.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 2.5...16V
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| NCP5500DTADJRKG |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 0.5A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.23V
Output voltage: 1.25...5V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 0.5A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.23V
Output voltage: 1.25...5V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 2.5...16V
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| NSS20601CF8T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.4W; ChipFET8
Mounting: SMD
Collector-emitter voltage: 20V
Power dissipation: 1.4W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 200
Kind of package: reel; tape
Case: ChipFET8
Frequency: 140MHz
Collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.4W; ChipFET8
Mounting: SMD
Collector-emitter voltage: 20V
Power dissipation: 1.4W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 200
Kind of package: reel; tape
Case: ChipFET8
Frequency: 140MHz
Collector current: 6A
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| H11L3SM |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L3
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L3
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| NTMT045N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TDFN4
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TDFN4
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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Мінімальне замовлення: 3000 шт
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| NTMT061N60S5F |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Pulsed drain current: 146A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Pulsed drain current: 146A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| NTMT064N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| NTMT090N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| NTMT095N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| NCV2001SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 0.9÷7VDC; SOT23-5; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 0.9...7V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 1.6V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 10pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 0.9÷7VDC; SOT23-5; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 0.9...7V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 1.6V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 10pA
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| NTBL045N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 51A
Pulsed drain current: 182A
Power dissipation: 174W
Case: H-PSOF8L
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 51A
Pulsed drain current: 182A
Power dissipation: 174W
Case: H-PSOF8L
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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Мінімальне замовлення: 2000 шт
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| NTBL050N65S3H |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Pulsed drain current: 132A
Power dissipation: 305W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Pulsed drain current: 132A
Power dissipation: 305W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2000 шт
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| NTBL070N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Drain-source voltage: 650V
Drain current: 44A
Case: H-PSOF8L
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 110A
Power dissipation: 312W
Kind of channel: enhancement
Gate charge: 82nC
Gate-source voltage: ±30V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Drain-source voltage: 650V
Drain current: 44A
Case: H-PSOF8L
Polarisation: unipolar
On-state resistance: 70mΩ
Pulsed drain current: 110A
Power dissipation: 312W
Kind of channel: enhancement
Gate charge: 82nC
Gate-source voltage: ±30V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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Мінімальне замовлення: 2000 шт
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| NCV1117DT33T5G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...20V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...20V
Application: automotive industry
на замовлення 2183 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.64 грн |
| 16+ | 26.92 грн |
| 25+ | 24.32 грн |
| 100+ | 20.55 грн |
| GBPC1506 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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| GBPC1506W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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| SZMMBZ15VAWT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SC70; Ch: 2
Application: automotive industry
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SC70; Ch: 2
Application: automotive industry
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
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| FDMS037N08B |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 3.7mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 104.2W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 3.7mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 104.2W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
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| NCV7342D10R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; CAN; SMD; SO8; Ch: 1; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: CAN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Interface: CAN
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; CAN; SMD; SO8; Ch: 1; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: CAN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Interface: CAN
Number of channels: 1
Supply voltage: 4.5...5.5V DC
на замовлення 2557 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.16 грн |
| 14+ | 30.28 грн |
| 25+ | 27.59 грн |
| 100+ | 24.15 грн |
| MC33072DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
на замовлення 3526 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.68 грн |
| 25+ | 17.28 грн |
| 26+ | 16.19 грн |
| 29+ | 14.76 грн |
| 100+ | 12.58 грн |
| 250+ | 11.24 грн |
| 500+ | 11.15 грн |
| MC33072ADR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
на замовлення 2056 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.51 грн |
| 17+ | 24.82 грн |
| 20+ | 21.97 грн |
| 25+ | 18.45 грн |
| 100+ | 14.34 грн |
| 250+ | 12.58 грн |
| MC33202DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 8mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 8mV
Kind of package: reel; tape
на замовлення 2973 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.80 грн |
| 21+ | 20.63 грн |
| 25+ | 18.28 грн |
| 50+ | 16.69 грн |
| 100+ | 15.18 грн |
| NC7WZ16P6X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.13 грн |
| 76+ | 5.54 грн |
| 91+ | 4.61 грн |
| 117+ | 3.59 грн |
| 127+ | 3.30 грн |
| 132+ | 3.20 грн |
| NC7WV16P6X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 0.9uA
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 0.9µA
Kind of package: reel; tape
Case: SC70-6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 0.9uA
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 0.9µA
Kind of package: reel; tape
Case: SC70-6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
на замовлення 1086 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.45 грн |
| 39+ | 10.90 грн |
| 44+ | 9.56 грн |
| 53+ | 7.97 грн |
| 100+ | 7.38 грн |
| MUR820G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 0.975V
Max. load current: 16A
Heatsink thickness: max. 1.4mm
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 0.975V
Max. load current: 16A
Heatsink thickness: max. 1.4mm
Reverse recovery time: 35ns
на замовлення 339 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.25 грн |
| 10+ | 49.65 грн |
| 50+ | 46.38 грн |
| 100+ | 44.62 грн |
| 250+ | 39.58 грн |
| FSA4159P6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 3.5Ω
Number of inputs: 1
Output configuration: SPDT
Case: SC70-6; SC88; SOT363
Number of outputs: 2
Number of channels: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 3.5Ω
Number of inputs: 1
Output configuration: SPDT
Case: SC70-6; SC88; SOT363
Number of outputs: 2
Number of channels: 1
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Мінімальне замовлення: 3000 шт
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| SZBZX84C2V4ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C2V4LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
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Мінімальне замовлення: 42000 шт
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| MC74HCT365ADR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| MC74HCT365ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| FDI045N10A-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Power dissipation: 263W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 656A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Power dissipation: 263W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 656A
Gate charge: 54nC
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| FDP045N10A-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
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| FDPF045N10A |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 268A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 268A
Gate charge: 57nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 268A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 268A
Gate charge: 57nC
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| SB10-05P-TD-E |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape
Mounting: SMD
Case: SOT89
Max. forward voltage: 0.55V
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape
Mounting: SMD
Case: SOT89
Max. forward voltage: 0.55V
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 10A
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| FAN3224TM1X-F085 |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
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| FAN3224TMPX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Technology: MillerDrive™
Pulse fall time: 9ns
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Impulse rise time: 12ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Technology: MillerDrive™
Pulse fall time: 9ns
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Impulse rise time: 12ns
товару немає в наявності
В кошику
од. на суму грн.
| FAN3224TUM1X-F085 |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
товару немає в наявності
В кошику
од. на суму грн.
| FAN3224TUMX-F085 |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
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В кошику
од. на суму грн.
| LM2575D2T-5R4G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 1N4934G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: bulk
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: bulk
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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В кошику
од. на суму грн.