| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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FGD3245G2-F085C | ONSEMI |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 23A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FGD3245G2-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 23A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 23A Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 23nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDP61N20 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 38.5A Power dissipation: 417W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 41mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
на замовлення 97 шт: термін постачання 14-30 дні (днів) |
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| NTBG014N120M3P | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 452A Power dissipation: 326W Gate charge: 377nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 106A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V On-state resistance: 29mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTBG015N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 103A Pulsed drain current: 422A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: SMD Gate charge: 283nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTBG045N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 184A Power dissipation: 121W Gate charge: 105nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 44A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: -5...18V On-state resistance: 40mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTBG060N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 176A Power dissipation: 3.6W Gate charge: 88nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 5.8A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -5...15V On-state resistance: 135mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTBG070N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 93A Power dissipation: 86W Gate charge: 57nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 25A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V On-state resistance: 136mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTBG080N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 110A Power dissipation: 89W Gate charge: 56nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 21A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 121mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS016N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 32A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 160A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFS016N06CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 18W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 226A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM350T | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...33V Output current: 3A Case: TO220 Mounting: THT Number of channels: 1 Heatsink thickness: 0.51...0.61mm |
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В кошику од. на суму грн. | ||||||||||||||||||
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FQD10N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 50W Case: DPAK Mounting: SMD Gate charge: 26nC Technology: QFET® Drain current: 5A Kind of channel: enhancement Drain-source voltage: 200V Gate-source voltage: ±30V Kind of package: reel; tape On-state resistance: 0.36Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTR5105PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.141A Power dissipation: 0.347W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 544 шт: термін постачання 14-30 дні (днів) |
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MMSZ5251B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5248CT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZMMSZ5248ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxE Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NZD9V1MUT5G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: X3DFN2 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: NZDxxMU |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDB13AN06A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK Gate charge: 29nC Polarisation: unipolar Technology: PowerTrench® Drain current: 62A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 34mΩ Mounting: SMD Power dissipation: 115W |
на замовлення 751 шт: термін постачання 14-30 дні (днів) |
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| SS33 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 100A Max. forward voltage: 0.5V Max. off-state voltage: 30V Load current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTTFS4C02NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 164A Pulsed drain current: 663A Power dissipation: 2.5W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.25mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP730BMT500TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 5V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP730BMT300TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP730BMT330TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3.3V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP730BMTADJTBG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.48V Output voltage: 1.2...37V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP730ASN300T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP730BMT250TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 2.5V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP730ASNADJT1G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.48V Output voltage: 1.2...37V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP730ASN330T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOT23-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3.3V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP730ASN250T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; TSOT23-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 2.5V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP730ASN280T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; TSOT23-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 2.8V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTK3139PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.57A Power dissipation: 0.45W Case: SOT723 Gate-source voltage: ±6V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 91 шт: термін постачання 14-30 дні (днів) |
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NTE4151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A Power dissipation: 313mW Case: SC89 Gate-source voltage: ±6V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.1nC |
на замовлення 3327 шт: термін постачання 14-30 дні (днів) |
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NTR2101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -3A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1280 шт: термін постачання 14-30 дні (днів) |
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MM3Z13VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G |
на замовлення 630 шт: термін постачання 14-30 дні (днів) |
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MM3Z13VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±2% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxST1G |
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MM3Z13VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 13V Mounting: SMD Tolerance: ±2% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxB |
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В кошику од. на суму грн. | ||||||||||||||||||
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MM3Z13VC | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape; MM3Z Type of diode: Zener Power dissipation: 0.2W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3Z |
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SZMM3Z13VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±2% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||||
| SZMM5Z13VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±6% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5ZxxT1G Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
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SZMM3Z13VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±6% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||||
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SZ1SMA5928BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 13V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||||
| NVMFS5C410NLWFAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH75M65L4Q1PTG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 59A; PIM27; SiC Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 650V Collector current: 59A Case: PIM27 Application: for UPS; Inverter Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Pulsed collector current: 176A Mechanical mounting: screw Technology: SiC |
товару немає в наявності |
Мінімальне замовлення: 21 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH240B120H3Q1P1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32 Type of semiconductor module: IGBT Technology: SiC Mechanical mounting: screw Pulsed collector current: 276A Application: for UPS; Inverter Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit Semiconductor structure: SiC diode/transistor Case: PIM32 Gate-emitter voltage: ±20V Collector current: 92A |
товару немає в наявності |
Мінімальне замовлення: 21 шт В кошику од. на суму грн. | |||||||||||||||||||
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NCV4266ST50T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.15A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 5V Kind of package: reel; tape Case: SOT223 Number of channels: 1 |
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В кошику од. на суму грн. | ||||||||||||||||||
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NCV4266-2CST33T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.15A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 3.3V Kind of package: reel; tape Case: SOT223 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV4266-2CST50T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.15A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 5V Kind of package: reel; tape Case: SOT223 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MUR440RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 4A; Ifsm: 70A; DO201AD; reel,tape; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 70A Case: DO201AD Kind of package: reel; tape Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVBS540T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape Max. forward impulse current: 190A Max. forward voltage: 0.5V Application: automotive industry Max. off-state voltage: 40V Load current: 5A Max. load current: 10A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 855 шт: термін постачання 14-30 дні (днів) |
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FAN3224TMX-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -4.3...2.8A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP45520IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8 Case: DFN8 Mounting: SMD Number of channels: 1 Supply voltage: 3...5.5V DC Active logical level: low Control voltage: 0.5...13.5V DC Output current: 10.5A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 22.5mΩ |
на замовлення 2877 шт: термін постачання 14-30 дні (днів) |
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FSV1060V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 60V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. forward impulse current: 280A Kind of package: reel; tape |
на замовлення 384 шт: термін постачання 14-30 дні (днів) |
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FSV10100V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.67V Max. forward impulse current: 180A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FSV15150V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 150V; 15A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 150V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 250A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FSV2060L | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 60V; 20A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 60V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 0.32kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FSV10150V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 150V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.84V Max. forward impulse current: 180A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FSV12100V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 100V; 12A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 220A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FSV20100V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 270A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FSV8100V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 100V; 8A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.61V Max. forward impulse current: 150A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| FGD3245G2-F085C |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FGD3245G2-F085V |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 23nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 23nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FDP61N20 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38.5A
Power dissipation: 417W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38.5A
Power dissipation: 417W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 188.76 грн |
| 10+ | 148.44 грн |
| 20+ | 124.96 грн |
| 50+ | 110.70 грн |
| NTBG014N120M3P |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 452A
Power dissipation: 326W
Gate charge: 377nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 106A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 452A
Power dissipation: 326W
Gate charge: 377nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 106A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTBG015N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTBG045N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 184A
Power dissipation: 121W
Gate charge: 105nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 184A
Power dissipation: 121W
Gate charge: 105nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTBG060N090SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 176A
Power dissipation: 3.6W
Gate charge: 88nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 176A
Power dissipation: 3.6W
Gate charge: 88nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTBG070N120M3S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 93A
Power dissipation: 86W
Gate charge: 57nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 136mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 93A
Power dissipation: 86W
Gate charge: 57nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 136mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTBG080N120SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 110A
Power dissipation: 89W
Gate charge: 56nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 121mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 110A
Power dissipation: 89W
Gate charge: 56nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 121mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NVTFS016N06CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS016N06CT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
товару немає в наявності
В кошику
од. на суму грн.
| LM350T |
|
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...33V
Output current: 3A
Case: TO220
Mounting: THT
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...33V
Output current: 3A
Case: TO220
Mounting: THT
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
товару немає в наявності
В кошику
од. на суму грн.
| FQD10N20CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
товару немає в наявності
В кошику
од. на суму грн.
| NTR5105PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 544 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 36+ | 11.91 грн |
| 41+ | 10.32 грн |
| 59+ | 7.11 грн |
| 100+ | 6.06 грн |
| 500+ | 4.30 грн |
| MMSZ5251B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
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Мінімальне замовлення: 10 шт
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| MMSZ5248CT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
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| SZMMSZ5248ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
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| NZD9V1MUT5G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: X3DFN2
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: NZDxxMU
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: X3DFN2
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: NZDxxMU
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| FDB13AN06A0 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Power dissipation: 115W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Power dissipation: 115W
на замовлення 751 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 130.06 грн |
| 5+ | 106.51 грн |
| 10+ | 98.96 грн |
| 100+ | 92.25 грн |
| SS33 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 3A
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| NTTFS4C02NTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 164A
Pulsed drain current: 663A
Power dissipation: 2.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 164A
Pulsed drain current: 663A
Power dissipation: 2.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NCP730BMT500TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730BMT300TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730BMT330TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730BMTADJTBG |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASN300T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730BMT250TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASNADJT1G |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASN330T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASN250T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASN280T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NTK3139PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.97 грн |
| 37+ | 11.57 грн |
| 50+ | 9.26 грн |
| NTE4151PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.1nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.1nC
на замовлення 3327 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 53+ | 8.05 грн |
| 60+ | 7.04 грн |
| 79+ | 5.35 грн |
| 100+ | 5.12 грн |
| 500+ | 4.84 грн |
| 1000+ | 4.52 грн |
| 1500+ | 4.35 грн |
| 3000+ | 4.20 грн |
| NTR2101PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1280 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.13 грн |
| 17+ | 26.17 грн |
| 19+ | 22.48 грн |
| 50+ | 15.43 грн |
| 100+ | 13.17 грн |
| 250+ | 10.73 грн |
| 500+ | 9.31 грн |
| 1000+ | 8.22 грн |
| MM3Z13VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
на замовлення 630 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.13 грн |
| 82+ | 5.12 грн |
| 121+ | 3.47 грн |
| 146+ | 2.88 грн |
| 500+ | 1.85 грн |
| MM3Z13VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
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| MM3Z13VB |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxB
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| MM3Z13VC |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape; MM3Z
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape; MM3Z
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3Z
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| SZMM3Z13VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Application: automotive industry
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| SZMM5Z13VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| SZMM3Z13VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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| SZ1SMA5928BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| NVMFS5C410NLWFAFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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Мінімальне замовлення: 1500 шт
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| NXH75M65L4Q1PTG |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 59A; PIM27; SiC
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 59A
Case: PIM27
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 176A
Mechanical mounting: screw
Technology: SiC
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 59A; PIM27; SiC
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 59A
Case: PIM27
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 176A
Mechanical mounting: screw
Technology: SiC
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Мінімальне замовлення: 21 шт
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| NXH240B120H3Q1P1G |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Type of semiconductor module: IGBT
Technology: SiC
Mechanical mounting: screw
Pulsed collector current: 276A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Semiconductor structure: SiC diode/transistor
Case: PIM32
Gate-emitter voltage: ±20V
Collector current: 92A
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Type of semiconductor module: IGBT
Technology: SiC
Mechanical mounting: screw
Pulsed collector current: 276A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Semiconductor structure: SiC diode/transistor
Case: PIM32
Gate-emitter voltage: ±20V
Collector current: 92A
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Мінімальне замовлення: 21 шт
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| NCV4266ST50T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
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| NCV4266-2CST33T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
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| NCV4266-2CST50T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
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| MUR440RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 4A; Ifsm: 70A; DO201AD; reel,tape; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Case: DO201AD
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 4A; Ifsm: 70A; DO201AD; reel,tape; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Case: DO201AD
Kind of package: reel; tape
Reverse recovery time: 35ns
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| NRVBS540T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Max. forward impulse current: 190A
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 5A
Max. load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Max. forward impulse current: 190A
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 5A
Max. load current: 10A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 855 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.45 грн |
| 16+ | 27.26 грн |
| FAN3224TMX-F085 |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
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| NCP45520IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Mounting: SMD
Number of channels: 1
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 10.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 22.5mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Mounting: SMD
Number of channels: 1
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 10.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 22.5mΩ
на замовлення 2877 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.83 грн |
| 10+ | 58.71 грн |
| FSV1060V |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 280A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 280A
Kind of package: reel; tape
на замовлення 384 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 100.25 грн |
| 10+ | 60.55 грн |
| 50+ | 51.58 грн |
| 100+ | 47.80 грн |
| 200+ | 44.03 грн |
| 250+ | 42.94 грн |
| FSV10100V |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
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| FSV15150V |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 250A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 250A
Kind of package: reel; tape
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| FSV2060L |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 60V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 0.32kA
Kind of package: reel; tape
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| FSV10150V |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
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| FSV12100V |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 220A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 220A
Kind of package: reel; tape
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| FSV20100V |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 270A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 270A
Kind of package: reel; tape
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| FSV8100V |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Max. forward impulse current: 150A
Kind of package: reel; tape
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