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GBPC3510W ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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SRDA05-4R2G SRDA05-4R2G ONSEMI srda05-4r2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; bidirectional; ESD; SO8; Ch: 4; reel,tape
Mounting: SMD
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SO8
Capacitance: 8pF
Type of diode: TVS array
Number of channels: 4
на замовлення 2480 шт:
термін постачання 14-30 дні (днів)
10+44.61 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
MC74ACT125DR2G MC74ACT125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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NCP3284AMNTXG ONSEMI ncp3284-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Topology: buck
Mounting: SMD
Input voltage: 4.5...18V
Output current: 35A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...5.5V
Number of channels: 1
Frequency: 0.5...1MHz
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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NCP3284MNTXG ONSEMI ncp3284-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Topology: buck
Mounting: SMD
Input voltage: 4.5...18V
Output current: 30A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...5.5V
Number of channels: 1
Frequency: 0.5...1MHz
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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MC74VHC1G09DFT2GMC74VHC1G09DFT2G
MC74VHC1G09DFT2GMC74VHC1G09DFT2G
 MC74VHC1G09DFT2G ONSEMI mc74vhc1g09-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
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NLVVHC1G09DFT1G ONSEMI mc74vhc1g09-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
товару немає в наявності
 Мінімальне замовлення: 6000 шт
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MUR240RLG MUR240RLG ONSEMI mur240-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; Ifsm: 35A; DO41; reel,tape; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 65ns
Max. forward impulse current: 35A
на замовлення 4791 шт:
термін постачання 14-30 дні (днів)
24+18.75 грн
33+12.85 грн
38+11.11 грн
100+8.87 грн
500+7.30 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
MUR2100EG MUR2100EG ONSEMI mur2100e-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; bulk; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 75ns
Max. forward impulse current: 35A
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MUR220G MUR220G ONSEMI mur220-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
Max. forward impulse current: 35A
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MUR2100ERLG MUR2100ERLG ONSEMI mur2100e-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 75ns
Max. forward impulse current: 35A
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MUR210RLG MUR210RLG ONSEMI mur210-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; Ifsm: 35A; DO41; reel,tape; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 30ns
Max. forward impulse current: 35A
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MUR220RLG MUR220RLG ONSEMI mur220-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; reel,tape; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward impulse current: 35A
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NLAS5123MUR2G ONSEMI nlas5123-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT
Operating temperature: -40...85°C
Quiescent current: 1µA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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FDN302P FDN302P ONSEMI FDN302P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±12V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1302 шт:
термін постачання 14-30 дні (днів)
11+43.75 грн
13+33.83 грн
15+29.52 грн
50+20.23 грн
100+17.08 грн
500+12.02 грн
1000+11.11 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
MDB6S MDB6S ONSEMI MDB10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: MicroDIP
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 3518 шт:
термін постачання 14-30 дні (днів)
10+48.22 грн
12+35.32 грн
14+29.77 грн
25+22.97 грн
100+15.84 грн
500+12.11 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FFSH40120ADN-F085 FFSH40120ADN-F085 ONSEMI ffsh40120adn-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.75V
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+1585.79 грн
3+1331.57 грн
10+1233.73 грн
30+1163.25 грн
В кошику  од. на суму  грн.
FFB20UP20DN-F085 FFB20UP20DN-F085 ONSEMI ffb20u20dn-f085-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; 40ns; D2PAK; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 40ns
Max. forward voltage: 1.15V
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FFSB2065BDN-F085 FFSB2065BDN-F085 ONSEMI ffsb2065bdn-f085-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.75V
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FFSH1265BDN-F085 ONSEMI ffsh1265bdn-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 14.4A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 14.4A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
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FFSH2065BDN-F085 ONSEMI ffsh2065bdn-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
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FFSH4065BDN-F085 ONSEMI ffsh4065bdn-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
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NCV57302DSADJR4G ONSEMI ncp57302-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.24...13V
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FDN5630 FDN5630 ONSEMI FDN5630.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.18Ω
Power dissipation: 0.5W
Gate charge: 10nC
Polarisation: unipolar
на замовлення 2560 шт:
термін постачання 14-30 дні (днів)
11+41.07 грн
15+27.94 грн
50+19.15 грн
100+16.17 грн
500+11.52 грн
1000+10.61 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
NCP1076BAP100G ONSEMI ncp1076a-d.pdf Category: Integrated circuits - Unclassified
Description: NCP1076BAP100G
на замовлення 395 шт:
термін постачання 14-30 дні (днів)
65+109.83 грн
350+87.06 грн
Мінімальне замовлення: 65 шт
В кошику  од. на суму  грн.
1N4756A 1N4756A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 47V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 47V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: bulk
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TIP42C TIP42C ONSEMI TIP42.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
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KSA708YBU KSA708YBU ONSEMI KSA708.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.7A
Power dissipation: 0.8W
Case: TO92
Current gain: 120...240
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 9509 шт:
термін постачання 14-30 дні (днів)
25+17.86 грн
33+12.60 грн
39+10.86 грн
47+8.87 грн
100+6.80 грн
500+5.56 грн
1000+5.31 грн
5000+4.81 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
FGD3245G2-F085C FGD3245G2-F085C ONSEMI fgd3245g2-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Collector current: 23A
Mounting: SMD
Collector-emitter voltage: 450V
Power dissipation: 150W
Gate charge: 23nC
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
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FGD3245G2-F085V FGD3245G2-F085V ONSEMI fgd3245g2-f085v-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK
Collector current: 23A
Mounting: SMD
Collector-emitter voltage: 450V
Power dissipation: 150W
Gate charge: 23nC
Type of transistor: IGBT
Case: DPAK
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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FDP61N20 FDP61N20 ONSEMI FDP61N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38.5A
Power dissipation: 417W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
3+186.62 грн
10+146.75 грн
20+123.54 грн
50+109.44 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTBG014N120M3P ONSEMI ntbg014n120m3p-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 106A
Pulsed drain current: 452A
Power dissipation: 326W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 377nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
 Мінімальне замовлення: 800 шт
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NTBG015N065SC1 ONSEMI ntbg015n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTBG045N065SC1 ONSEMI ntbg045n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 184A
Power dissipation: 121W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
 Мінімальне замовлення: 800 шт
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NTBG060N090SC1 ONSEMI ntbg060n090sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Pulsed drain current: 176A
Power dissipation: 3.6W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
 Мінімальне замовлення: 800 шт
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NTBG070N120M3S ONSEMI NTBG070N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 93A
Power dissipation: 86W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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 Мінімальне замовлення: 800 шт
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NTBG080N120SC1 ONSEMI ntbg080n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
 Мінімальне замовлення: 800 шт
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NVTFS016N06CTAG ONSEMI nvtfs016n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
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NVMFS016N06CT1G ONSEMI nvmfs016n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
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LM350T LM350T ONSEMI LM350T.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...33V
Output current: 3A
Case: TO220
Mounting: THT
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
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FQD10N20CTM FQD10N20CTM ONSEMI FQD10N20C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
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NTR5105PT1G NTR5105PT1G ONSEMI ntr5105p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 544 шт:
термін постачання 14-30 дні (днів)
28+16.07 грн
36+11.77 грн
41+10.20 грн
59+7.03 грн
100+5.99 грн
500+4.25 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
MMSZ5251B MMSZ5251B ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
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 Мінімальне замовлення: 10 шт
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MMSZ5248CT1G MMSZ5248CT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
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SZMMSZ5248ET1G SZMMSZ5248ET1G ONSEMI MMSZ52xxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
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NZD9V1MUT5G ONSEMI NZDxxMU.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: X3DFN2
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: NZDxxMU
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FDB13AN06A0 FDB13AN06A0 ONSEMI FDB13AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Power dissipation: 115W
на замовлення 751 шт:
термін постачання 14-30 дні (днів)
4+128.58 грн
5+105.30 грн
10+97.84 грн
100+91.20 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SS33 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 3A
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NTTFS4C02NTAG ONSEMI nttfs4c02n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 164A
Pulsed drain current: 663A
Power dissipation: 2.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP730BMT500TBG ONSEMI ncp730-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730BMT300TBG ONSEMI ncp730-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730BMT330TBG ONSEMI ncp730-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730BMTADJTBG ONSEMI ncp730-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASN300T1G NCP730ASN300T1G ONSEMI ncp730-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730BMT250TBG ONSEMI NCP730-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASNADJT1G NCP730ASNADJT1G ONSEMI ncp730-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASN330T1G NCP730ASN330T1G ONSEMI ncp730-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASN250T1G NCP730ASN250T1G ONSEMI ncp730-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASN280T1G NCP730ASN280T1G ONSEMI NCP730-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NTK3139PT1G NTK3139PT1G ONSEMI NTK3139P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
24+18.75 грн
37+11.44 грн
50+9.15 грн
Мінімальне замовлення: 24 шт
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GBPC3510W GBPCxx.PDF
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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SRDA05-4R2G srda05-4r2-d.pdf
SRDA05-4R2G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; bidirectional; ESD; SO8; Ch: 4; reel,tape
Mounting: SMD
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SO8
Capacitance: 8pF
Type of diode: TVS array
Number of channels: 4
на замовлення 2480 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+44.61 грн
Мінімальне замовлення: 10 шт
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MC74ACT125DR2G mc74ac125-d.pdf
MC74ACT125DR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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Мінімальне замовлення: 2500 шт
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NCP3284AMNTXG ncp3284-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Topology: buck
Mounting: SMD
Input voltage: 4.5...18V
Output current: 35A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...5.5V
Number of channels: 1
Frequency: 0.5...1MHz
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Мінімальне замовлення: 3000 шт
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NCP3284MNTXG ncp3284-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Topology: buck
Mounting: SMD
Input voltage: 4.5...18V
Output current: 30A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...5.5V
Number of channels: 1
Frequency: 0.5...1MHz
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Мінімальне замовлення: 3000 шт
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MC74VHC1G09DFT2G mc74vhc1g09-d.pdf
MC74VHC1G09DFT2GMC74VHC1G09DFT2G
MC74VHC1G09DFT2GMC74VHC1G09DFT2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
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NLVVHC1G09DFT1G mc74vhc1g09-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
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Мінімальне замовлення: 6000 шт
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MUR240RLG mur240-d.pdf
MUR240RLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; Ifsm: 35A; DO41; reel,tape; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 65ns
Max. forward impulse current: 35A
на замовлення 4791 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
24+18.75 грн
33+12.85 грн
38+11.11 грн
100+8.87 грн
500+7.30 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
MUR2100EG mur2100e-d.pdf
MUR2100EG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; bulk; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 75ns
Max. forward impulse current: 35A
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MUR220G mur220-d.pdf
MUR220G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
Max. forward impulse current: 35A
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MUR2100ERLG mur2100e-d.pdf
MUR2100ERLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 75ns
Max. forward impulse current: 35A
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MUR210RLG mur210-d.pdf
MUR210RLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; Ifsm: 35A; DO41; reel,tape; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 30ns
Max. forward impulse current: 35A
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MUR220RLG mur220-d.pdf
MUR220RLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; reel,tape; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward impulse current: 35A
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NLAS5123MUR2G nlas5123-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT
Operating temperature: -40...85°C
Quiescent current: 1µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDN302P FDN302P.pdf
FDN302P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±12V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1302 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
11+43.75 грн
13+33.83 грн
15+29.52 грн
50+20.23 грн
100+17.08 грн
500+12.02 грн
1000+11.11 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
MDB6S MDB10S.pdf
MDB6S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: MicroDIP
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 3518 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
10+48.22 грн
12+35.32 грн
14+29.77 грн
25+22.97 грн
100+15.84 грн
500+12.11 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
FFSH40120ADN-F085 ffsh40120adn-f085-d.pdf
FFSH40120ADN-F085
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.75V
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1585.79 грн
3+1331.57 грн
10+1233.73 грн
30+1163.25 грн
В кошику  од. на суму  грн.
FFB20UP20DN-F085 ffb20u20dn-f085-d.pdf
FFB20UP20DN-F085
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; 40ns; D2PAK; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 40ns
Max. forward voltage: 1.15V
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FFSB2065BDN-F085 ffsb2065bdn-f085-d.pdf
FFSB2065BDN-F085
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.75V
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FFSH1265BDN-F085 ffsh1265bdn-f085-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 14.4A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 14.4A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
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В кошику  од. на суму  грн.
FFSH2065BDN-F085 ffsh2065bdn-f085-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
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В кошику  од. на суму  грн.
FFSH4065BDN-F085 ffsh4065bdn-f085-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
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В кошику  од. на суму  грн.
NCV57302DSADJR4G ncp57302-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.24...13V
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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В кошику  од. на суму  грн.
FDN5630 FDN5630.pdf
FDN5630
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.18Ω
Power dissipation: 0.5W
Gate charge: 10nC
Polarisation: unipolar
на замовлення 2560 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
11+41.07 грн
15+27.94 грн
50+19.15 грн
100+16.17 грн
500+11.52 грн
1000+10.61 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
NCP1076BAP100G ncp1076a-d.pdf
Виробник: ONSEMI
Category: Integrated circuits - Unclassified
Description: NCP1076BAP100G
на замовлення 395 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
65+109.83 грн
350+87.06 грн
Мінімальне замовлення: 65 шт
В кошику  од. на суму  грн.
1N4756A 1N47xxA.PDF
1N4756A
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 47V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 47V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: bulk
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В кошику  од. на суму  грн.
TIP42C TIP42.pdf
TIP42C
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
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В кошику  од. на суму  грн.
KSA708YBU KSA708.PDF
KSA708YBU
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.7A
Power dissipation: 0.8W
Case: TO92
Current gain: 120...240
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 9509 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
25+17.86 грн
33+12.60 грн
39+10.86 грн
47+8.87 грн
100+6.80 грн
500+5.56 грн
1000+5.31 грн
5000+4.81 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
FGD3245G2-F085C fgd3245g2-f085c-d.pdf
FGD3245G2-F085C
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Collector current: 23A
Mounting: SMD
Collector-emitter voltage: 450V
Power dissipation: 150W
Gate charge: 23nC
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
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FGD3245G2-F085V fgd3245g2-f085v-d.pdf
FGD3245G2-F085V
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK
Collector current: 23A
Mounting: SMD
Collector-emitter voltage: 450V
Power dissipation: 150W
Gate charge: 23nC
Type of transistor: IGBT
Case: DPAK
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FDP61N20 FDP61N20.pdf
FDP61N20
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38.5A
Power dissipation: 417W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+186.62 грн
10+146.75 грн
20+123.54 грн
50+109.44 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTBG014N120M3P ntbg014n120m3p-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 106A
Pulsed drain current: 452A
Power dissipation: 326W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 377nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTBG015N065SC1 ntbg015n065sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTBG045N065SC1 ntbg045n065sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 184A
Power dissipation: 121W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTBG060N090SC1 ntbg060n090sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Pulsed drain current: 176A
Power dissipation: 3.6W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTBG070N120M3S NTBG070N120M3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 93A
Power dissipation: 86W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTBG080N120SC1 ntbg080n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NVTFS016N06CTAG nvtfs016n06c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
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NVMFS016N06CT1G nvmfs016n06c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
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В кошику  од. на суму  грн.
LM350T LM350T.pdf
LM350T
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...33V
Output current: 3A
Case: TO220
Mounting: THT
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
товару немає в наявності
В кошику  од. на суму  грн.
FQD10N20CTM FQD10N20C.pdf
FQD10N20CTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
товару немає в наявності
В кошику  од. на суму  грн.
NTR5105PT1G ntr5105p-d.pdf
NTR5105PT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 544 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
28+16.07 грн
36+11.77 грн
41+10.20 грн
59+7.03 грн
100+5.99 грн
500+4.25 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
MMSZ5251B MMSZ52xxT1G.PDF
MMSZ5251B
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
MMSZ5248CT1G MMSZ52xxT1G.PDF
MMSZ5248CT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
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SZMMSZ5248ET1G MMSZ52xxET1G.PDF
SZMMSZ5248ET1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
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NZD9V1MUT5G NZDxxMU.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: X3DFN2
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: NZDxxMU
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FDB13AN06A0 FDB13AN06A0.pdf
FDB13AN06A0
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Power dissipation: 115W
на замовлення 751 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+128.58 грн
5+105.30 грн
10+97.84 грн
100+91.20 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SS33 SS32_SS39.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 3A
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NTTFS4C02NTAG nttfs4c02n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 164A
Pulsed drain current: 663A
Power dissipation: 2.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP730BMT500TBG ncp730-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730BMT300TBG ncp730-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730BMT330TBG ncp730-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730BMTADJTBG ncp730-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASN300T1G ncp730-d.pdf
NCP730ASN300T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730BMT250TBG NCP730-D.PDF
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASNADJT1G ncp730-d.pdf
NCP730ASNADJT1G
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASN330T1G ncp730-d.pdf
NCP730ASN330T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASN250T1G ncp730-d.pdf
NCP730ASN250T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NCP730ASN280T1G NCP730-D.PDF
NCP730ASN280T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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NTK3139PT1G NTK3139P.pdf
NTK3139PT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
24+18.75 грн
37+11.44 грн
50+9.15 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
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