Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMBFJ176 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V On-state resistance: 250Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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MMBFJ108 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 80mA Power dissipation: 0.35W Case: SuperSOT-3 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA On-state resistance: 8Ω |
на замовлення 1723 шт: термін постачання 21-30 дні (днів) |
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MMBFJ110 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 10mA Power dissipation: 0.46W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA On-state resistance: 18Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N3070TR | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: rectifying Case: DO35 Mounting: THT Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Capacitance: 5pF Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Features of semiconductor devices: small signal Reverse recovery time: 50ns |
на замовлення 3816 шт: термін постачання 21-30 дні (днів) |
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FQPF2N80 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF2N80YDTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5929BRLG | ONSEMI |
![]() Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Case: CASE59 Manufacturer series: 1N59xxB Power dissipation: 3W Mounting: THT Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Zener voltage: 15V Leakage current: 1µA Tolerance: ±5% |
на замовлення 4280 шт: термін постачання 21-30 дні (днів) |
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MC74HC73ADG | ONSEMI |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube Type of integrated circuit: digital Kind of integrated circuit: JK flip-flop Number of channels: 2 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Trigger: negative-edge-triggered |
на замовлення 365 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT50ADR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Number of channels: 6 Type of integrated circuit: digital Quiescent current: 40µA Manufacturer series: VHCT Technology: CMOS; TTL Kind of integrated circuit: buffer; non-inverting Case: SO14 Mounting: SMD |
на замовлення 502 шт: термін постачання 21-30 дні (днів) |
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NLU1GT50AMX1TCG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6 Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Number of channels: 1 Type of integrated circuit: digital Quiescent current: 40µA Technology: CMOS; TTL Kind of integrated circuit: buffer; non-inverting Case: ULLGA6 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT2907ALT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT2907ALT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NSS40201LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 40V Current gain: 200 Collector current: 2A Type of transistor: NPN Application: automotive industry Power dissipation: 0.54W Polarisation: bipolar Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 150MHz |
на замовлення 609 шт: термін постачання 21-30 дні (днів) |
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MMBF4391LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 30Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 1177 шт: термін постачання 21-30 дні (днів) |
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FDMS86300DC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS86200DC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDMS3669S | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Mounting: SMD Case: Power56 Drain-source voltage: 30/30V Drain current: 24/60A On-state resistance: 14.5/7.1mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.2/2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 24/34nC Kind of channel: enhancement Gate-source voltage: ±20/±12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMS7620S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 13/22A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 30/15.1mΩ Mounting: SMD Gate charge: 11/23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMS9600S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 32/30A Pulsed drain current: 60A Power dissipation: 2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13/8.3mΩ Mounting: SMD Gate charge: 13/29nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT3906LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT3906LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT3906WT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT4403LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTJS3157NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NLAS3157MX3TCG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: ULLGA6 Supply voltage: 1.65...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of output: SPDT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NLASB3157MTR2G | ONSEMI |
![]() Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT Type of integrated circuit: analog switch Case: WDFN6 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Number of channels: 1 Quiescent current: 10µA Kind of output: SPDT Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NRVBSS24NT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 75A Kind of package: reel; tape Application: automotive industry Max. load current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SBC847BDW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 2094 шт: термін постачання 21-30 дні (днів) |
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SMMBT5401LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DFB2040 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A Case: TS-6P Max. off-state voltage: 0.4kV Load current: 20A Kind of package: tube Leads: flat pin Max. forward voltage: 1.1V Max. forward impulse current: 250A Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74AC273DWG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 80µA Trigger: positive-edge-triggered Kind of integrated circuit: D flip-flop |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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MJE15029G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB Collector-emitter voltage: 120V Collector current: 8A Type of transistor: PNP Power dissipation: 50W Polarisation: bipolar Kind of package: tube Case: TO220AB Mounting: THT Frequency: 30MHz |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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FDP52N20 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 33A Power dissipation: 357W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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GBPC3510 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMQ8203 | ONSEMI |
![]() Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-80V Drain current: 6/-6A Power dissipation: 2.5W Case: WDFN12 Gate-source voltage: ±20V On-state resistance: 323/191mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Gate charge: 19/5nC Semiconductor structure: common drain |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMQ86530L | ONSEMI |
![]() Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12 Type of transistor: N-MOSFET x4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 22W Case: MLP12 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level; MOSFET H-Bridge Gate charge: 33nC Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBFJ310LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBFJ309LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 25V; 30mA; 225mW; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 30mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBFJ310LT3G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TIP29AG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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1SS400T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW Type of diode: switching Case: SOD523F Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Capacitance: 3pF Kind of package: reel; tape Power dissipation: 0.2W Max. forward voltage: 1.2V Reverse recovery time: 4ns Features of semiconductor devices: fast switching |
на замовлення 4729 шт: термін постачання 21-30 дні (днів) |
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LM2575T-3.3G | ONSEMI |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 3.3V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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74VHC02M | ONSEMI |
![]() ![]() Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Quiescent current: 20µA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC02MTCX | ONSEMI |
![]() Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: NOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Quiescent current: 20µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC02MX | ONSEMI |
![]() ![]() Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC Type of integrated circuit: digital Kind of gate: NOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Quiescent current: 20µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SMMBT4401LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74ACT32DG | ONSEMI |
![]() ![]() Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT Type of integrated circuit: digital Number of channels: quad; 4 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: ACT Number of inputs: 2 Kind of gate: OR |
на замовлення 380 шт: термін постачання 21-30 дні (днів) |
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MC74ACT273DWG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered Manufacturer series: ACT |
на замовлення 140 шт: термін постачання 21-30 дні (днів) |
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SMMBT2222ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
SMMBT2222ALT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT2222AWT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74ACT14MTC | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Supply voltage: 4.5...5.5V DC Number of inputs: 1 Case: TSSOP14 Kind of gate: NOT Number of channels: hex; 6 Family: ACT Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74ACT14SC | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Supply voltage: 4.5...5.5V DC Number of inputs: 1 Case: SO14 Kind of gate: NOT Number of channels: hex; 6 Family: ACT Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74ACT14SCX | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Supply voltage: 4.5...5.5V DC Number of inputs: 1 Case: SO14 Kind of gate: NOT Number of channels: hex; 6 Family: ACT Quiescent current: 40µA Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SMMBT5551LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 80...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT5551LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 80...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQP45N15V2 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB Drain-source voltage: 150V Drain current: 31A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 220W Polarisation: unipolar Kind of package: tube Gate charge: 94nC Technology: QFET® Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MPSA56G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74ACT08MTCX | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74ACT08SCX | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
товару немає в наявності |
В кошику од. на суму грн. |
MMBFJ176 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.99 грн |
15+ | 26.45 грн |
50+ | 19.57 грн |
66+ | 13.68 грн |
MMBFJ108 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
на замовлення 1723 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.34 грн |
14+ | 27.37 грн |
58+ | 15.67 грн |
157+ | 14.83 грн |
500+ | 14.68 грн |
1000+ | 14.22 грн |
MMBFJ110 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
товару немає в наявності
В кошику
од. на суму грн.
1N3070TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: rectifying
Case: DO35
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Features of semiconductor devices: small signal
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: rectifying
Case: DO35
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Features of semiconductor devices: small signal
Reverse recovery time: 50ns
на замовлення 3816 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.53 грн |
40+ | 9.56 грн |
62+ | 6.19 грн |
100+ | 4.55 грн |
287+ | 3.20 грн |
500+ | 2.91 грн |
FQPF2N80 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FQPF2N80YDTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
1N5929BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Manufacturer series: 1N59xxB
Power dissipation: 3W
Mounting: THT
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Manufacturer series: 1N59xxB
Power dissipation: 3W
Mounting: THT
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Tolerance: ±5%
на замовлення 4280 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.70 грн |
21+ | 18.42 грн |
50+ | 14.22 грн |
100+ | 12.54 грн |
107+ | 8.40 грн |
293+ | 7.95 грн |
1000+ | 7.64 грн |
MC74HC73ADG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: negative-edge-triggered
на замовлення 365 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.04 грн |
12+ | 34.55 грн |
25+ | 27.14 грн |
51+ | 17.81 грн |
138+ | 16.90 грн |
275+ | 16.36 грн |
MC74VHCT50ADR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Type of integrated circuit: digital
Quiescent current: 40µA
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Type of integrated circuit: digital
Quiescent current: 40µA
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Mounting: SMD
на замовлення 502 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.39 грн |
11+ | 35.17 грн |
25+ | 28.82 грн |
46+ | 19.80 грн |
125+ | 18.73 грн |
NLU1GT50AMX1TCG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Mounting: SMD
товару немає в наявності
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од. на суму грн.
SMMBT2907ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMMBT2907ALT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
NSS40201LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 40V
Current gain: 200
Collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.54W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 40V
Current gain: 200
Collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.54W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 150MHz
на замовлення 609 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.99 грн |
23+ | 16.97 грн |
50+ | 12.31 грн |
75+ | 11.39 грн |
90+ | 10.09 грн |
247+ | 9.48 грн |
MMBF4391LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 1177 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.72 грн |
25+ | 16.67 грн |
50+ | 13.99 грн |
100+ | 11.47 грн |
111+ | 8.10 грн |
304+ | 7.72 грн |
500+ | 7.57 грн |
1000+ | 7.49 грн |
FDMS86300DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FDMS86200DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3669S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Mounting: SMD
Case: Power56
Drain-source voltage: 30/30V
Drain current: 24/60A
On-state resistance: 14.5/7.1mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24/34nC
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Mounting: SMD
Case: Power56
Drain-source voltage: 30/30V
Drain current: 24/60A
On-state resistance: 14.5/7.1mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24/34nC
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
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FDMS7620S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS9600S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
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SMMBT3906LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT4403LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NTJS3157NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
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NLAS3157MX3TCG |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
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NLASB3157MTR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 10µA
Kind of output: SPDT
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 10µA
Kind of output: SPDT
Technology: CMOS
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NRVBSS24NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
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SBC847BDW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2094 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.94 грн |
32+ | 12.31 грн |
37+ | 10.47 грн |
75+ | 8.56 грн |
100+ | 8.10 грн |
154+ | 5.81 грн |
424+ | 5.50 грн |
SMMBT5401LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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DFB2040 |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
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MC74AC273DWG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 80µA
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 80µA
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.61 грн |
10+ | 65.90 грн |
21+ | 43.12 грн |
58+ | 40.75 грн |
MJE15029G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Collector-emitter voltage: 120V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Collector-emitter voltage: 120V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
на замовлення 57 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 114.67 грн |
10+ | 100.91 грн |
11+ | 87.15 грн |
29+ | 82.56 грн |
FDP52N20 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 126 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 165.48 грн |
9+ | 104.73 грн |
24+ | 99.38 грн |
GBPC3510 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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FDMQ8203 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Gate charge: 19/5nC
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Gate charge: 19/5nC
Semiconductor structure: common drain
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FDMQ86530L |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Gate charge: 33nC
Pulsed drain current: 50A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Gate charge: 33nC
Pulsed drain current: 50A
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SMMBFJ310LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ309LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ310LT3G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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TIP29AG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 97.15 грн |
1SS400T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Features of semiconductor devices: fast switching
на замовлення 4729 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.23 грн |
70+ | 5.50 грн |
99+ | 3.90 грн |
115+ | 3.34 грн |
477+ | 1.89 грн |
1311+ | 1.79 грн |
3000+ | 1.75 грн |
LM2575T-3.3G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 45 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 246.17 грн |
8+ | 121.55 грн |
21+ | 114.67 грн |
74VHC02M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: tube
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74VHC02MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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74VHC02MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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SMMBT4401LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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MC74ACT32DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Number of inputs: 2
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Number of inputs: 2
Kind of gate: OR
на замовлення 380 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.45 грн |
12+ | 33.56 грн |
25+ | 27.29 грн |
45+ | 20.11 грн |
124+ | 18.96 грн |
MC74ACT273DWG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 140 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.61 грн |
10+ | 73.31 грн |
24+ | 38.00 грн |
66+ | 35.93 грн |
SMMBT2222ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222ALT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222AWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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74ACT14MTC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: TSSOP14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: TSSOP14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Quiescent current: 40µA
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Quiescent current: 40µA
Type of integrated circuit: digital
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SMMBT5551LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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SMMBT5551LT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FQP45N15V2 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Drain-source voltage: 150V
Drain current: 31A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Kind of package: tube
Gate charge: 94nC
Technology: QFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Drain-source voltage: 150V
Drain current: 31A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Kind of package: tube
Gate charge: 94nC
Technology: QFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
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MPSA56G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
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74ACT08MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: ACT
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74ACT08SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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