| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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NCP163ASN300T1G | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 250mA; SOT23-5; SMD Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Output current: 0.25A Voltage drop: 0.185V Number of channels: 1 Output voltage: 3V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP163AMX180TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 250mA; XDFN4; SMD Protection: overheating OTP Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN4 Operating temperature: -40...125°C Output current: 0.25A Voltage drop: 0.25V Number of channels: 1 Output voltage: 1.8V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP163AFCS120T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: WLCSP4 Operating temperature: -40...125°C Output current: 0.25A Number of channels: 1 Output voltage: 1.2V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP163AFCT120T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: WLCSP4 Operating temperature: -40...125°C Output current: 0.25A Number of channels: 1 Output voltage: 1.2V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP163AMX120TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; XDFN4; SMD Protection: overheating OTP Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN4 Operating temperature: -40...125°C Output current: 0.25A Number of channels: 1 Output voltage: 1.2V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP163AMX270TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 250mA; XDFN4; SMD Protection: overheating OTP Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN4 Operating temperature: -40...125°C Output current: 0.25A Number of channels: 1 Output voltage: 2.7V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP163AMX280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; XDFN4; SMD Protection: overheating OTP Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN4 Operating temperature: -40...125°C Output current: 0.25A Voltage drop: 0.16V Number of channels: 1 Output voltage: 2.8V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP163AMX290TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.9V; 250mA; XDFN4; SMD Protection: overheating OTP Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN4 Operating temperature: -40...125°C Output current: 0.25A Voltage drop: 0.9V Number of channels: 1 Output voltage: 2.9V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
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NCP163ASN150T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 250mA; SOT23-5; SMD Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Output current: 0.25A Number of channels: 1 Output voltage: 1.5V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP163ASN250T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 250mA; SOT23-5; SMD Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Output current: 0.25A Number of channels: 1 Output voltage: 2.5V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP163ASN280T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; SOT23-5; SMD Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Output current: 0.25A Voltage drop: 0.19V Number of channels: 1 Output voltage: 2.8V Tolerance: ±2% Input voltage: 2.2...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP1631DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16 Type of integrated circuit: PMIC Mounting: SMD Case: SO16 Operating temperature: -55...125°C Output current: -500...800mA Operating voltage: 10...20V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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NCP1632DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16 Type of integrated circuit: PMIC Mounting: SMD Case: SO16 Operating temperature: -40...125°C Output current: -500...800mA Operating voltage: 10...20V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5A160PLZT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6 Case: DFN5x6 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -60V On-state resistance: 7.7mΩ Gate-source voltage: ±20V Drain current: 100A Power dissipation: 200W Kind of channel: enhancement Type of transistor: P-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
| ESD7504MUTAG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; unidirectional; ESD; uDFN10; Ch: 4; reel,tape Case: uDFN10 Application: HDMI Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Semiconductor structure: unidirectional Capacitance: 0.55pF Leakage current: 1µA Number of channels: 4 Max. off-state voltage: 3.3V Breakdown voltage: 5V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM393M | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Case: SO8 Operating temperature: 0...70°C Input offset voltage: 9mV Input offset current: 150nA Kind of package: tube Kind of output: open collector |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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MBR3045PT | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 0.76V Max. load current: 30A Max. forward impulse current: 200A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS16 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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MBRB1545CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Kind of package: reel; tape Max. load current: 15A Max. forward impulse current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBRB1545CTG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Kind of package: tube Max. load current: 15A Max. forward impulse current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HUF75345P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB Gate charge: 275nC On-state resistance: 7mΩ Polarisation: unipolar Technology: UltraFET® Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Drain current: 75A Gate-source voltage: ±20V Kind of channel: enhancement Case: TO220AB Drain-source voltage: 55V Power dissipation: 325W |
на замовлення 142 шт: термін постачання 14-30 дні (днів) |
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HUF75321P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB Gate charge: 44nC On-state resistance: 34mΩ Polarisation: unipolar Technology: UltraFET® Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Drain current: 31A Gate-source voltage: ±20V Kind of channel: enhancement Case: TO220AB Drain-source voltage: 55V Power dissipation: 93W |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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| HUF75329D3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 128W; TO252AA Gate charge: 50nC On-state resistance: 26mΩ Polarisation: unipolar Mounting: SMD Type of transistor: N-MOSFET Drain current: 20A Gate-source voltage: ±20V Kind of channel: enhancement Case: TO252AA Drain-source voltage: 55V Power dissipation: 128W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| HUF75321D3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 93W; TO252AA Gate charge: 36nC On-state resistance: 36mΩ Polarisation: unipolar Mounting: SMD Type of transistor: N-MOSFET Drain current: 20A Gate-source voltage: ±20V Kind of channel: enhancement Case: TO252AA Drain-source voltage: 55V Power dissipation: 93W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| HUF75345G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO247-3 Gate charge: 0.22µC On-state resistance: 7mΩ Polarisation: unipolar Mounting: THT Type of transistor: N-MOSFET Drain current: 75A Gate-source voltage: ±20V Kind of channel: enhancement Case: TO247-3 Drain-source voltage: 55V Power dissipation: 325W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| HUF75345S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; D2PAK-3 Gate charge: 0.22µC On-state resistance: 7mΩ Polarisation: unipolar Mounting: SMD Type of transistor: N-MOSFET Drain current: 75A Gate-source voltage: ±20V Kind of channel: enhancement Case: D2PAK-3 Drain-source voltage: 55V Power dissipation: 325W |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||
| H11F1SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: FET transistor Insulation voltage: 4.17kV Case: PDIP6 Turn-on time: 45µs Turn-off time: 45µs Max. off-state voltage: 5V Manufacturer series: H11FXM |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| H11F1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: FET transistor Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: PDIP6 Turn-on time: 45µs Turn-off time: 45µs Max. off-state voltage: 5V Manufacturer series: H11FXM |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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6N137M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Transfer rate: 1Mbps Case: DIP8 Turn-on time: 75ns Turn-off time: 75ns CTR@If: 19-50%@16mA Slew rate: 2.5kV/μs |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
| NCS21674DMG100R2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 240kHz; Ch: 2; 2.7÷5.5VDC; Micro8 Mounting: SMT Operating temperature: -40...125°C Input bias current: 1µA Input offset current: 15µA Input offset voltage: 0.5mV Slew rate: 2V/μs Voltage supply range: 2.7...5.5V DC Kind of package: reel; tape Gain: 100V/V Bandwidth: 240kHz Number of channels: dual; 2 Type of integrated circuit: instrumentation amplifier Case: Micro8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBRA140T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.74V Kind of package: reel; tape Max. load current: 2A |
на замовлення 1574 шт: термін постачання 14-30 дні (днів) |
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MURA205T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 30ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.94V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJH11021G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Case: TO247-3 Type of transistor: PNP Mounting: THT Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
на замовлення 164 шт: термін постачання 14-30 дні (днів) |
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MBR150RLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 1V Max. forward impulse current: 25A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4741ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 11V; reel,tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA Kind of package: reel; tape |
на замовлення 1302 шт: термін постачання 14-30 дні (днів) |
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| GBPC3510 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMFS3D2N10MDT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5 Case: DFN5 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 48nC On-state resistance: 3.5mΩ Gate-source voltage: ±20V Power dissipation: 155W Drain current: 142A Drain-source voltage: 100V Pulsed drain current: 879A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| NVMFS6H858NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5 Case: DFN5 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC On-state resistance: 19.5mΩ Gate-source voltage: ±20V Power dissipation: 21W Drain current: 30A Drain-source voltage: 80V Pulsed drain current: 142A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMYS020N08LHTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56 Case: LFPAK56 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC On-state resistance: 19.5mΩ Gate-source voltage: ±20V Power dissipation: 21W Drain current: 30A Drain-source voltage: 80V Pulsed drain current: 142A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDBL9403-F085T6 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 79.8W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 0.95mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| NCV8774CDT33RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1 Kind of package: reel; tape Application: automotive industry Case: DPAK4 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Number of channels: 1 Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV8774CDT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape Kind of package: reel; tape Application: automotive industry Case: DPAK4 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Number of channels: 1 Output voltage: 5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MURS240T3G | ONSEMI |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape Mounting: SMD Reverse recovery time: 65ns Max. forward voltage: 1.15V Max. off-state voltage: 0.4kV Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTJS3157NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 60mΩ Power dissipation: 1W Gate-source voltage: ±8V |
на замовлення 1996 шт: термін постачання 14-30 дні (днів) |
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NTJS3151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W Case: SC70-6; SC88; SOT363 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A On-state resistance: 60mΩ Power dissipation: 0.625W Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NLAS3158MNR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA Operating temperature: -55...125°C Technology: CMOS Case: WDFN12 Kind of integrated circuit: multiplexer Mounting: SMD Kind of package: reel; tape Kind of output: SPDT x2 Quiescent current: 10µA Supply voltage: 1.65...5.5V DC Number of channels: 2 Type of integrated circuit: analog switch |
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Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||
| NTZS3151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD Case: SOT563F Version: ESD Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A On-state resistance: 0.15Ω Power dissipation: 0.21W Gate-source voltage: ±8V |
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 |
BAT54S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape |
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Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
 |
4N25M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 20%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
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Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||
 |
NSVBC847BDW1T2G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
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| NSVBC847BTT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
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| NSVBC143ZDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...200 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT Base resistor: 4.7kΩ Quantity in set/package: 4000pcs. |
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| NSVBC857BTT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
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| NSVBC114EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 10kΩ Kind of transistor: BRT Base resistor: 10kΩ Quantity in set/package: 4000pcs. |
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| NSVBC114YDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 10kΩ Quantity in set/package: 4000pcs. |
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| NSVBC114YPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 10kΩ Quantity in set/package: 4000pcs. |
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| NSVBC123JPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ Quantity in set/package: 4000pcs. |
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| NSVBC124XPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...150 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 22kΩ Quantity in set/package: 4000pcs. |
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| NSVBC143TPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Quantity in set/package: 4000pcs. |
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В кошику од. на суму грн. | |||||||||||||||||
| NSVBC143ZPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...200 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Quantity in set/package: 4000pcs. |
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В кошику од. на суму грн. |
| NCP163ASN300T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.185V
Number of channels: 1
Output voltage: 3V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.185V
Number of channels: 1
Output voltage: 3V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AMX180TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 1.8V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 1.8V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AFCS120T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP4
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP4
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AFCT120T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP4
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: WLCSP4
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AMX120TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AMX270TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 2.7V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 2.7V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AMX280TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.16V
Number of channels: 1
Output voltage: 2.8V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.16V
Number of channels: 1
Output voltage: 2.8V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AMX290TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.9V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.9V
Number of channels: 1
Output voltage: 2.9V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.9V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.9V
Number of channels: 1
Output voltage: 2.9V
Tolerance: ±2%
Input voltage: 2.2...5.5V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NCP163ASN150T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 1.5V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 1.5V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163ASN250T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163ASN280T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.19V
Number of channels: 1
Output voltage: 2.8V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.19V
Number of channels: 1
Output voltage: 2.8V
Tolerance: ±2%
Input voltage: 2.2...5.5V
товару немає в наявності
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| NCP1631DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Output current: -500...800mA
Operating voltage: 10...20V DC
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Output current: -500...800mA
Operating voltage: 10...20V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCP1632DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Output current: -500...800mA
Operating voltage: 10...20V DC
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 10÷20VDC; SO16
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Output current: -500...800mA
Operating voltage: 10...20V DC
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| NVMFS5A160PLZT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
On-state resistance: 7.7mΩ
Gate-source voltage: ±20V
Drain current: 100A
Power dissipation: 200W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
On-state resistance: 7.7mΩ
Gate-source voltage: ±20V
Drain current: 100A
Power dissipation: 200W
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| ESD7504MUTAG |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; unidirectional; ESD; uDFN10; Ch: 4; reel,tape
Case: uDFN10
Application: HDMI
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.55pF
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; unidirectional; ESD; uDFN10; Ch: 4; reel,tape
Case: uDFN10
Application: HDMI
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.55pF
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Version: ESD
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| LM393M |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
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Мінімальне замовлення: 3 шт
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| MBR3045PT |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.76V
Max. load current: 30A
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.76V
Max. load current: 30A
Max. forward impulse current: 200A
Kind of package: tube
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| BAS16 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
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Мінімальне замовлення: 25 шт
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| MBRB1545CTT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. load current: 15A
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: reel; tape
Max. load current: 15A
Max. forward impulse current: 150A
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| SBRB1545CTG |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. load current: 15A
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Max. load current: 15A
Max. forward impulse current: 150A
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| HUF75345P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Gate charge: 275nC
On-state resistance: 7mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 325W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Gate charge: 275nC
On-state resistance: 7mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 325W
на замовлення 142 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.80 грн |
| 3+ | 187.38 грн |
| 10+ | 150.90 грн |
| 50+ | 120.22 грн |
| HUF75321P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Gate charge: 44nC
On-state resistance: 34mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 31A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 93W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Gate charge: 44nC
On-state resistance: 34mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 31A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 93W
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.25 грн |
| 10+ | 72.13 грн |
| HUF75329D3ST |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 128W; TO252AA
Gate charge: 50nC
On-state resistance: 26mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 20A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO252AA
Drain-source voltage: 55V
Power dissipation: 128W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 128W; TO252AA
Gate charge: 50nC
On-state resistance: 26mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 20A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO252AA
Drain-source voltage: 55V
Power dissipation: 128W
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Мінімальне замовлення: 2500 шт
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| HUF75321D3ST |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 93W; TO252AA
Gate charge: 36nC
On-state resistance: 36mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 20A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO252AA
Drain-source voltage: 55V
Power dissipation: 93W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; 93W; TO252AA
Gate charge: 36nC
On-state resistance: 36mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 20A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO252AA
Drain-source voltage: 55V
Power dissipation: 93W
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Мінімальне замовлення: 2500 шт
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| HUF75345G3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO247-3
Gate charge: 0.22µC
On-state resistance: 7mΩ
Polarisation: unipolar
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO247-3
Drain-source voltage: 55V
Power dissipation: 325W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO247-3
Gate charge: 0.22µC
On-state resistance: 7mΩ
Polarisation: unipolar
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO247-3
Drain-source voltage: 55V
Power dissipation: 325W
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| HUF75345S3ST |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; D2PAK-3
Gate charge: 0.22µC
On-state resistance: 7mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: D2PAK-3
Drain-source voltage: 55V
Power dissipation: 325W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; D2PAK-3
Gate charge: 0.22µC
On-state resistance: 7mΩ
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: D2PAK-3
Drain-source voltage: 55V
Power dissipation: 325W
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Мінімальне замовлення: 800 шт
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| H11F1SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 4.17kV
Case: PDIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 4.17kV
Case: PDIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
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Мінімальне замовлення: 1000 шт
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| H11F1SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: FET transistor; Uinsul: 4.17kV; PDIP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
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Мінімальне замовлення: 1000 шт
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| 6N137M |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
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Мінімальне замовлення: 3 шт
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| NCS21674DMG100R2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Ch: 2; 2.7÷5.5VDC; Micro8
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual; 2
Type of integrated circuit: instrumentation amplifier
Case: Micro8
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Ch: 2; 2.7÷5.5VDC; Micro8
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual; 2
Type of integrated circuit: instrumentation amplifier
Case: Micro8
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| MBRA140T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Kind of package: reel; tape
Max. load current: 2A
на замовлення 1574 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.04 грн |
| 19+ | 22.72 грн |
| 23+ | 18.49 грн |
| 50+ | 11.52 грн |
| 100+ | 9.70 грн |
| 250+ | 8.29 грн |
| 500+ | 7.63 грн |
| 1000+ | 7.05 грн |
| MURA205T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
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| MJH11021G |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Case: TO247-3
Type of transistor: PNP
Mounting: THT
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Case: TO247-3
Type of transistor: PNP
Mounting: THT
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
на замовлення 164 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 288.53 грн |
| 10+ | 254.54 грн |
| MBR150RLG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
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| 1N4741ATR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
на замовлення 1302 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.71 грн |
| 50+ | 8.29 грн |
| 57+ | 7.30 грн |
| 68+ | 6.18 грн |
| 100+ | 4.23 грн |
| 500+ | 3.32 грн |
| 1000+ | 3.04 грн |
| GBPC3510 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| NTMFS3D2N10MDT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Power dissipation: 155W
Drain current: 142A
Drain-source voltage: 100V
Pulsed drain current: 879A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Power dissipation: 155W
Drain current: 142A
Drain-source voltage: 100V
Pulsed drain current: 879A
Kind of package: reel; tape
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Мінімальне замовлення: 1500 шт
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| NVMFS6H858NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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| NVMYS020N08LHTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
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| FDBL9403-F085T6 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 79.8W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 79.8W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2000 шт
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| NCV8774CDT33RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3.3V
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| NCV8774CDT50RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 5V
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| MURS240T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Mounting: SMD
Reverse recovery time: 65ns
Max. forward voltage: 1.15V
Max. off-state voltage: 0.4kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Mounting: SMD
Reverse recovery time: 65ns
Max. forward voltage: 1.15V
Max. off-state voltage: 0.4kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
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| NTJS3157NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
на замовлення 1996 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.50 грн |
| 41+ | 10.28 грн |
| 44+ | 9.45 грн |
| 100+ | 6.22 грн |
| 500+ | 4.39 грн |
| 1000+ | 3.90 грн |
| 1500+ | 3.48 грн |
| NTJS3151PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
On-state resistance: 60mΩ
Power dissipation: 0.625W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
On-state resistance: 60mΩ
Power dissipation: 0.625W
Gate-source voltage: ±12V
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| NLAS3158MNR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA
Operating temperature: -55...125°C
Technology: CMOS
Case: WDFN12
Kind of integrated circuit: multiplexer
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA
Operating temperature: -55...125°C
Technology: CMOS
Case: WDFN12
Kind of integrated circuit: multiplexer
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Type of integrated circuit: analog switch
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Мінімальне замовлення: 3 шт
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| NTZS3151PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD
Case: SOT563F
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
On-state resistance: 0.15Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD
Case: SOT563F
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
On-state resistance: 0.15Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
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| BAT54S |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
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Мінімальне замовлення: 25 шт
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| 4N25M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
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Мінімальне замовлення: 2 шт
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| NSVBC847BDW1T2G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBC847BTT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBC143ZDXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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| NSVBC857BTT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBC114EDXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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| NSVBC114YDXV6T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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| NSVBC114YPDXV6T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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| NSVBC123JPDXV6T1G |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
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| NSVBC124XPDXV6T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Quantity in set/package: 4000pcs.
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| NSVBC143TPDXV6T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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| NSVBC143ZPDXV6T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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