| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| NSVDTA144WET1G | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NUP2114UPXV5T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT553 Number of channels: 2 Kind of package: reel; tape Version: ESD |
на замовлення 942 шт: термін постачання 14-30 дні (днів) |
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NUP4114UCW1T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Max. forward impulse current: 12A Semiconductor structure: unidirectional Version: ESD Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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NUP4114UPXV6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NUP4114UPXV6T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZNUP4114UCLW1T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.5V Semiconductor structure: unidirectional Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS12FP | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.45V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NZT7053 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Case: SOT223 Frequency: 200MHz Collector current: 1.5A Collector-emitter voltage: 100V Power dissipation: 1W Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 3820 шт: термін постачання 14-30 дні (днів) |
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NDS9948 | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8 Mounting: SMD Case: SO8 Power dissipation: 2W Gate charge: 13nC Polarisation: unipolar Technology: PowerTrench® Drain current: -2A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.5Ω |
на замовлення 2245 шт: термін постачання 14-30 дні (днів) |
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NDC7003P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.34A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 2217 шт: термін постачання 14-30 дні (днів) |
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NTD20P06LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2852 шт: термін постачання 14-30 дні (днів) |
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NTZD3155CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 400/500mΩ Mounting: SMD Gate charge: 1.5/1.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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NDT452AP | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2223 шт: термін постачання 14-30 дні (днів) |
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NDC7001C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 0.51/-0.34A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 4/10Ω Mounting: SMD Gate charge: 1.5/2.2nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 242 шт: термін постачання 14-30 дні (днів) |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
на замовлення 3458 шт: термін постачання 14-30 дні (днів) |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3026 шт: термін постачання 14-30 дні (днів) |
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NVMFS5113PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -45A Power dissipation: 75W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 921 шт: термін постачання 14-30 дні (днів) |
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NTR4171PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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NJW3281G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 200W Case: TO3P Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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NTD25P03LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Power dissipation: 75W Case: DPAK Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTR4502PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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DTC124XET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 80...150 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
на замовлення 2430 шт: термін постачання 14-30 дні (днів) |
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J176-D74Z | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.35W Case: TO92 Gate-source voltage: 30V On-state resistance: 250Ω Mounting: THT Kind of package: Ammo Pack Gate current: 50mA |
на замовлення 1436 шт: термін постачання 14-30 дні (днів) |
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| UESD3.3DT5G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: common anode; double Case: SOT723 Mounting: SMD Kind of package: reel; tape Number of channels: 2 |
на замовлення 4155 шт: термін постачання 14-30 дні (днів) |
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| ESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SRDA3.3-4DR2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SO8 Max. off-state voltage: 3.3V Number of channels: 4 Kind of package: reel; tape Peak pulse power dissipation: 0.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 5V; SOD923; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: SOD923 Mounting: SMD Kind of package: reel; tape Version: ESD |
на замовлення 1718 шт: термін постачання 14-30 дні (днів) |
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| SZUESD3.3DT5G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74AC273DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Supply voltage: 2...6V DC Trigger: positive-edge-triggered |
на замовлення 1247 шт: термін постачання 14-30 дні (днів) |
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| 15GN03CA-TB-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.2W Case: SC59 Mounting: SMD Kind of package: reel; tape Frequency: 1.5GHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RB520S30T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB520S30T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZMMSZ4700T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ4xxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMA5938BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G |
на замовлення 4372 шт: термін постачання 14-30 дні (днів) |
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MMSZ5258BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 3840 шт: термін постачання 14-30 дні (днів) |
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FDN340P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -10A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 5967 шт: термін постачання 14-30 дні (днів) |
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GBU6K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Max. forward impulse current: 175A Max. forward voltage: 1V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 0.8kV Electrical mounting: THT Load current: 6A Kind of package: tube Case: GBU Type of bridge rectifier: single-phase |
на замовлення 682 шт: термін постачання 14-30 дні (днів) |
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GBU6D | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU6J | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: tube Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU6B | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM5Z12VT5G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode; MM5Z Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5Z |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
| SZMM5Z12VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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US1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVUS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP333FCT2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WLCSP4 Supply voltage: 1.2...5.5V DC Control voltage: 0...5.5V DC Kind of package: reel; tape On-state resistance: 0.4Ω Active logical level: high |
на замовлення 2900 шт: термін постачання 14-30 дні (днів) |
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FSBB20CH60C | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027 Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 3 Case: SPMMC-027 Output current: 20A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Power dissipation: 62W Collector-emitter voltage: 600V |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | ||||||||||||||||||
| FFSH3065B-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube Case: TO247-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. forward voltage: 1.7V Load current: 37A Max. off-state voltage: 650V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
FFSB3065B-F085 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 73A; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. forward voltage: 1.7V Load current: 73A Max. off-state voltage: 650V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
NCP163ASN330T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD Output current: 0.25A Type of integrated circuit: voltage regulator Voltage drop: 0.175V Operating temperature: -40...125°C Output voltage: 3.3V Case: SOT23-5 Number of channels: 1 Tolerance: ±2% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP163 Input voltage: 2.2...5.5V |
на замовлення 1578 шт: термін постачання 14-30 дні (днів) |
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| GBPC1501 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| GBPC1501W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
NVGS5120PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.1W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Pulsed drain current: -20A Drain current: -2.9A Gate charge: 18.1nC On-state resistance: 111mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET |
на замовлення 2895 шт: термін постачання 14-30 дні (днів) |
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| NSS20300MR6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 3A; 0.545W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.545W Collector current: 3A Collector-emitter voltage: 20V Application: automotive industry Polarisation: bipolar Type of transistor: PNP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBT35200MT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 35V; 2A; 1W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Collector current: 2A Collector-emitter voltage: 35V Polarisation: bipolar Type of transistor: PNP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSS30201MR6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 30V Current gain: 300...900 Frequency: 200MHz Polarisation: bipolar Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV2002SN1T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV Type of integrated circuit: operational amplifier Case: TSOP6 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 9.5mV Voltage supply range: 0.9...7V DC Slew rate: 1.2V/μs Bandwidth: 0.9MHz Integrated circuit features: rail-to-rail Number of channels: single; 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV2002SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV Type of integrated circuit: operational amplifier Case: TSOP6 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 9.5mV Voltage supply range: 0.9...7V DC Slew rate: 1.2V/μs Bandwidth: 0.9MHz Integrated circuit features: rail-to-rail Number of channels: single; 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SNSS30201MR6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 30V Current gain: 300...900 Frequency: 200MHz Application: automotive industry Polarisation: bipolar Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. |
| NSVDTA144WET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
товару немає в наявності
В кошику
од. на суму грн.
| NUP2114UPXV5T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT553
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT553
Number of channels: 2
Kind of package: reel; tape
Version: ESD
на замовлення 942 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.75 грн |
| 26+ | 16.25 грн |
| 30+ | 14.24 грн |
| 50+ | 10.64 грн |
| 100+ | 9.63 грн |
| 250+ | 8.96 грн |
| NUP4114UCW1T2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| NUP4114UPXV6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NUP4114UPXV6T2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SZNUP4114UCLW1T2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SS12FP |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| NZT7053 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 3820 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.04 грн |
| 11+ | 39.54 грн |
| 13+ | 34.10 грн |
| 100+ | 20.61 грн |
| 250+ | 17.26 грн |
| 500+ | 15.33 грн |
| 1000+ | 13.74 грн |
| NDS9948 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2W
Gate charge: 13nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.5Ω
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2W
Gate charge: 13nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.5Ω
на замовлення 2245 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.35 грн |
| 11+ | 41.05 грн |
| 12+ | 36.11 грн |
| 50+ | 26.89 грн |
| 62+ | 15.58 грн |
| 169+ | 14.74 грн |
| NDC7003P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2217 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.89 грн |
| 20+ | 21.36 грн |
| 50+ | 15.75 грн |
| 100+ | 13.82 грн |
| 117+ | 8.21 грн |
| 321+ | 7.79 грн |
| NTD20P06LT4G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2852 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 120.00 грн |
| 6+ | 70.88 грн |
| 10+ | 62.33 грн |
| 20+ | 55.54 грн |
| 29+ | 34.01 грн |
| 78+ | 32.17 грн |
| 2500+ | 30.91 грн |
| NTZD3155CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.30 грн |
| NDT452AP |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2223 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 107.36 грн |
| 6+ | 76.07 грн |
| 10+ | 65.60 грн |
| 23+ | 43.48 грн |
| 50+ | 43.40 грн |
| 61+ | 41.05 грн |
| 500+ | 39.46 грн |
| NDC7001C |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.74 грн |
| 11+ | 39.54 грн |
| 50+ | 27.14 грн |
| 64+ | 15.00 грн |
| 175+ | 14.24 грн |
| NTZD3155CT2G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
на замовлення 3458 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.97 грн |
| 25+ | 16.76 грн |
| 33+ | 12.90 грн |
| 100+ | 8.88 грн |
| 130+ | 7.37 грн |
| 358+ | 6.95 грн |
| 500+ | 6.62 грн |
| NVJD5121NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3026 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.16 грн |
| 26+ | 16.25 грн |
| 31+ | 13.82 грн |
| 50+ | 10.22 грн |
| 100+ | 9.30 грн |
| 146+ | 6.53 грн |
| 400+ | 6.20 грн |
| NVMFS5113PLT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 921 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.25 грн |
| 9+ | 109.75 грн |
| 24+ | 103.88 грн |
| 100+ | 103.05 грн |
| 500+ | 99.70 грн |
| NTR4171PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.70 грн |
| 15+ | 27.98 грн |
| 18+ | 24.55 грн |
| 25+ | 20.44 грн |
| NJW3281G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.58 грн |
| NTD25P03LT4G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| NTR4502PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.58 грн |
| 22+ | 19.10 грн |
| 27+ | 15.75 грн |
| 50+ | 10.56 грн |
| DTC124XET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
на замовлення 2430 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.83 грн |
| 52+ | 8.21 грн |
| 60+ | 7.04 грн |
| 106+ | 3.96 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.45 грн |
| J176-D74Z |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
на замовлення 1436 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.21 грн |
| 21+ | 20.36 грн |
| 25+ | 18.43 грн |
| 50+ | 17.01 грн |
| 93+ | 10.22 грн |
| 255+ | 9.72 грн |
| UESD3.3DT5G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
на замовлення 4155 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.77 грн |
| 24+ | 17.93 грн |
| 29+ | 14.66 грн |
| 37+ | 11.48 грн |
| 50+ | 9.80 грн |
| 100+ | 8.55 грн |
| 125+ | 7.62 грн |
| 344+ | 7.20 грн |
| 500+ | 6.95 грн |
| ESD9X3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
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од. на суму грн.
| SRDA3.3-4DR2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
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од. на суму грн.
| SZESD9X3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| SZESD9C3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| ESD9C3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5V; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5V; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
на замовлення 1718 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.04 грн |
| 39+ | 10.89 грн |
| 51+ | 8.24 грн |
| 64+ | 6.57 грн |
| 100+ | 5.27 грн |
| 296+ | 3.23 грн |
| 814+ | 3.05 грн |
| 1000+ | 2.93 грн |
| SZUESD3.3DT5G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| MC74AC273DWR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
на замовлення 1247 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.18 грн |
| 10+ | 48.76 грн |
| 25+ | 44.40 грн |
| 37+ | 26.31 грн |
| 100+ | 24.80 грн |
| 15GN03CA-TB-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
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од. на суму грн.
| RB520S30T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
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од. на суму грн.
| RB520S30T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
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од. на суму грн.
| SZMMSZ4700T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
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| 1SMA5938BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
на замовлення 4372 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.68 грн |
| 25+ | 17.09 грн |
| 50+ | 11.90 грн |
| 100+ | 10.39 грн |
| 250+ | 8.80 грн |
| 500+ | 7.88 грн |
| 1000+ | 7.62 грн |
| MMSZ5258BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 3840 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 99+ | 4.27 грн |
| 125+ | 3.35 грн |
| 193+ | 2.18 грн |
| 3000+ | 1.81 грн |
| FDN340P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 5967 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.58 грн |
| 25+ | 25.30 грн |
| 50+ | 22.03 грн |
| 75+ | 19.60 грн |
| 100+ | 17.68 грн |
| 250+ | 11.98 грн |
| 500+ | 8.96 грн |
| 1000+ | 7.62 грн |
| 1500+ | 7.20 грн |
| GBU6K |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Max. forward impulse current: 175A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Max. forward impulse current: 175A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
на замовлення 682 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 126.31 грн |
| 10+ | 77.08 грн |
| 20+ | 68.70 грн |
| 100+ | 53.62 грн |
| GBU6D |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| GBU6J |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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| GBU6B |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| MM5Z12VT5G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z
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Мінімальне замовлення: 8000 шт
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| SZMM5Z12VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| US1KFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| NRVUS1KFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| NCP333FCT2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP4
Supply voltage: 1.2...5.5V DC
Control voltage: 0...5.5V DC
Kind of package: reel; tape
On-state resistance: 0.4Ω
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP4
Supply voltage: 1.2...5.5V DC
Control voltage: 0...5.5V DC
Kind of package: reel; tape
On-state resistance: 0.4Ω
Active logical level: high
на замовлення 2900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.65 грн |
| 31+ | 13.57 грн |
| 35+ | 12.06 грн |
| 100+ | 10.72 грн |
| FSBB20CH60C |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 3
Case: SPMMC-027
Output current: 20A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 62W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 3
Case: SPMMC-027
Output current: 20A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 62W
Collector-emitter voltage: 600V
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Мінімальне замовлення: 60 шт
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| FFSH3065B-F085 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Load current: 37A
Max. off-state voltage: 650V
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Load current: 37A
Max. off-state voltage: 650V
Application: automotive industry
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| FFSB3065B-F085 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 73A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Load current: 73A
Max. off-state voltage: 650V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 73A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Load current: 73A
Max. off-state voltage: 650V
Application: automotive industry
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| NCP163ASN330T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Output current: 0.25A
Type of integrated circuit: voltage regulator
Voltage drop: 0.175V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP163
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Output current: 0.25A
Type of integrated circuit: voltage regulator
Voltage drop: 0.175V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: SOT23-5
Number of channels: 1
Tolerance: ±2%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP163
Input voltage: 2.2...5.5V
на замовлення 1578 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.36 грн |
| 23+ | 18.77 грн |
| 26+ | 16.42 грн |
| 31+ | 13.82 грн |
| 100+ | 13.57 грн |
| GBPC1501 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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| GBPC1501W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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| NVGS5120PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Pulsed drain current: -20A
Drain current: -2.9A
Gate charge: 18.1nC
On-state resistance: 111mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Pulsed drain current: -20A
Drain current: -2.9A
Gate charge: 18.1nC
On-state resistance: 111mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 2895 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 80.30 грн |
| 7+ | 59.98 грн |
| 10+ | 53.28 грн |
| 50+ | 40.80 грн |
| 100+ | 36.69 грн |
| 500+ | 31.17 грн |
| NSS20300MR6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 0.545W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.545W
Collector current: 3A
Collector-emitter voltage: 20V
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 0.545W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.545W
Collector current: 3A
Collector-emitter voltage: 20V
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
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| MBT35200MT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 35V; 2A; 1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 2A
Collector-emitter voltage: 35V
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 35V; 2A; 1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 2A
Collector-emitter voltage: 35V
Polarisation: bipolar
Type of transistor: PNP
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| NSS30201MR6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: NPN
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| NCV2002SN1T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV
Type of integrated circuit: operational amplifier
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 9.5mV
Voltage supply range: 0.9...7V DC
Slew rate: 1.2V/μs
Bandwidth: 0.9MHz
Integrated circuit features: rail-to-rail
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV
Type of integrated circuit: operational amplifier
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 9.5mV
Voltage supply range: 0.9...7V DC
Slew rate: 1.2V/μs
Bandwidth: 0.9MHz
Integrated circuit features: rail-to-rail
Number of channels: single; 1
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| NCV2002SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV
Type of integrated circuit: operational amplifier
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 9.5mV
Voltage supply range: 0.9...7V DC
Slew rate: 1.2V/μs
Bandwidth: 0.9MHz
Integrated circuit features: rail-to-rail
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV
Type of integrated circuit: operational amplifier
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 9.5mV
Voltage supply range: 0.9...7V DC
Slew rate: 1.2V/μs
Bandwidth: 0.9MHz
Integrated circuit features: rail-to-rail
Number of channels: single; 1
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| SNSS30201MR6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
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