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MMBFJ176 MMBFJ176 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
10+41.99 грн
15+26.45 грн
50+19.57 грн
66+13.68 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MMBFJ108 MMBFJ108 ONSEMI j109-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance:
на замовлення 1723 шт:
термін постачання 21-30 дні (днів)
11+40.34 грн
14+27.37 грн
58+15.67 грн
157+14.83 грн
500+14.68 грн
1000+14.22 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MMBFJ110 MMBFJ110 ONSEMI mmbfj110-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
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1N3070TR 1N3070TR ONSEMI 1n3070-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: rectifying
Case: DO35
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Features of semiconductor devices: small signal
Reverse recovery time: 50ns
на замовлення 3816 шт:
термін постачання 21-30 дні (днів)
36+11.53 грн
40+9.56 грн
62+6.19 грн
100+4.55 грн
287+3.20 грн
500+2.91 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
FQPF2N80 FQPF2N80 ONSEMI fqpf2n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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FQPF2N80YDTU FQPF2N80YDTU ONSEMI fqpf2n80ydtu-d.pdf FAIRS45220-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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1N5929BRLG 1N5929BRLG ONSEMI 1N59xxB.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Manufacturer series: 1N59xxB
Power dissipation: 3W
Mounting: THT
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Tolerance: ±5%
на замовлення 4280 шт:
термін постачання 21-30 дні (днів)
17+24.70 грн
21+18.42 грн
50+14.22 грн
100+12.54 грн
107+8.40 грн
293+7.95 грн
1000+7.64 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MC74HC73ADG MC74HC73ADG ONSEMI MC74HC73-D.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: negative-edge-triggered
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
7+65.04 грн
12+34.55 грн
25+27.14 грн
51+17.81 грн
138+16.90 грн
275+16.36 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MC74VHCT50ADR2G MC74VHCT50ADR2G ONSEMI mc74vhct50a-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Type of integrated circuit: digital
Quiescent current: 40µA
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Mounting: SMD
на замовлення 502 шт:
термін постачання 21-30 дні (днів)
7+63.39 грн
11+35.17 грн
25+28.82 грн
46+19.80 грн
125+18.73 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NLU1GT50AMX1TCG ONSEMI nlu1gt50-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Mounting: SMD
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SMMBT2907ALT1G ONSEMI mmbt2907alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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SMMBT2907ALT3G ONSEMI mmbt2907alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSS40201LT1G NSS40201LT1G ONSEMI nss40201l-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 40V
Current gain: 200
Collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.54W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 150MHz
на замовлення 609 шт:
термін постачання 21-30 дні (днів)
15+27.99 грн
23+16.97 грн
50+12.31 грн
75+11.39 грн
90+10.09 грн
247+9.48 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
MMBF4391LT1G MMBF4391LT1G ONSEMI mmbf4391lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 1177 шт:
термін постачання 21-30 дні (днів)
19+22.72 грн
25+16.67 грн
50+13.99 грн
100+11.47 грн
111+8.10 грн
304+7.72 грн
500+7.57 грн
1000+7.49 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
FDMS86300DC FDMS86300DC ONSEMI fdms86300dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86200DC FDMS86200DC ONSEMI fdms86200dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3669S ONSEMI fdms3669s-d.pdf ONSM-S-A0003585221-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Mounting: SMD
Case: Power56
Drain-source voltage: 30/30V
Drain current: 24/60A
On-state resistance: 14.5/7.1mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24/34nC
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
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FDMS7620S ONSEMI fdms7620s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS9600S ONSEMI fdms9600s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
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SMMBT3906LT1G ONSEMI mmbt3906lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906LT3G ONSEMI mmbt3906lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906WT1G ONSEMI mmbt3904wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT4403LT1G ONSEMI mmbt4403lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NTJS3157NT1G NTJS3157NT1G ONSEMI ntjs3157n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
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NLAS3157MX3TCG ONSEMI Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
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NLASB3157MTR2G ONSEMI nlasb3157-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 10µA
Kind of output: SPDT
Technology: CMOS
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NRVBSS24NT3G ONSEMI ss24-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
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SBC847BDW1T1G SBC847BDW1T1G ONSEMI BC84xXDW1Tx.PDF Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2094 шт:
термін постачання 21-30 дні (днів)
22+18.94 грн
32+12.31 грн
37+10.47 грн
75+8.56 грн
100+8.10 грн
154+5.81 грн
424+5.50 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SMMBT5401LT1G ONSEMI mmbt5401lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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DFB2040 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2D936488840DC&compId=DFB20xx.pdf?ci_sign=acc8c342310d07484802840a4e397ecb76a692aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
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MC74AC273DWG MC74AC273DWG ONSEMI mc74ac273-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 80µA
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
4+127.61 грн
10+65.90 грн
21+43.12 грн
58+40.75 грн
Мінімальне замовлення: 4
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MJE15029G MJE15029G ONSEMI MJE15031G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Collector-emitter voltage: 120V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
4+114.67 грн
10+100.91 грн
11+87.15 грн
29+82.56 грн
Мінімальне замовлення: 4
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FDP52N20 FDP52N20 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE92CE32B8FA259&compId=FDP52N20%2C%20FDPF52N20T.pdf?ci_sign=9f6ce9ee9503deb9021bb393eee3bd9d4a8dfe0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
3+165.48 грн
9+104.73 грн
24+99.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBPC3510 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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FDMQ8203 ONSEMI FDMQ8203.PDF Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Gate charge: 19/5nC
Semiconductor structure: common drain
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FDMQ86530L ONSEMI fdmq86530l-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Gate charge: 33nC
Pulsed drain current: 50A
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SMMBFJ310LT1G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ309LT1G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ310LT3G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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TIP29AG TIP29AG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CB51EFCFAE9820&compId=TIP29A-C_TIP30A-C.pdf?ci_sign=d0ea39944a06a9b634764395908636d5e2cab8c9 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
5+97.15 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
1SS400T1G 1SS400T1G ONSEMI 1ss400t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Features of semiconductor devices: fast switching
на замовлення 4729 шт:
термін постачання 21-30 дні (днів)
50+8.23 грн
70+5.50 грн
99+3.90 грн
115+3.34 грн
477+1.89 грн
1311+1.79 грн
3000+1.75 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
LM2575T-3.3G LM2575T-3.3G ONSEMI LM2575-ON-DTE.PDF Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
2+246.17 грн
8+121.55 грн
21+114.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
74VHC02M 74VHC02M ONSEMI FAIRS25986-1.pdf?t.download=true&u=5oefqw ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: tube
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74VHC02MTCX 74VHC02MTCX ONSEMI ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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74VHC02MX 74VHC02MX ONSEMI ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw FAIRS25986-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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SMMBT4401LT1G ONSEMI mmbt4401lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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MC74ACT32DG MC74ACT32DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE047DAA6A200C7&compId=74AC32SC.pdf?ci_sign=71f9b6949affe7b4984def07d408da8e11fa6413 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A560C7&compId=MC74AC32DG.pdf?ci_sign=2445cd0567e47abdf5adb2e1047c1744f7366b36 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Number of inputs: 2
Kind of gate: OR
на замовлення 380 шт:
термін постачання 21-30 дні (днів)
5+86.45 грн
12+33.56 грн
25+27.29 грн
45+20.11 грн
124+18.96 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC74ACT273DWG MC74ACT273DWG ONSEMI mc74ac273-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
4+127.61 грн
10+73.31 грн
24+38.00 грн
66+35.93 грн
Мінімальне замовлення: 4
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SMMBT2222ALT1G ONSEMI mmbt2222lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222ALT3G ONSEMI mmbt2222lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222AWT1G ONSEMI mmbt2222awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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74ACT14MTC 74ACT14MTC ONSEMI ONSM-S-A0003584689-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: TSSOP14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SC 74ACT14SC ONSEMI ONSM-S-A0003584689-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SCX 74ACT14SCX ONSEMI 74AC14-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Quiescent current: 40µA
Type of integrated circuit: digital
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SMMBT5551LT1G ONSEMI mmbt5550lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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SMMBT5551LT3G ONSEMI mmbt5550lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FQP45N15V2 FQP45N15V2 ONSEMI FQP45N15V2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Drain-source voltage: 150V
Drain current: 31A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Kind of package: tube
Gate charge: 94nC
Technology: QFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
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MPSA56G MPSA56G ONSEMI MPSA56G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
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74ACT08MTCX 74ACT08MTCX ONSEMI 74ACT08-D.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: ACT
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74ACT08SCX 74ACT08SCX ONSEMI 74ACT08-D.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MMBFJ176 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f
MMBFJ176
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+41.99 грн
15+26.45 грн
50+19.57 грн
66+13.68 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MMBFJ108 j109-d.pdf
MMBFJ108
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance:
на замовлення 1723 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.34 грн
14+27.37 грн
58+15.67 грн
157+14.83 грн
500+14.68 грн
1000+14.22 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MMBFJ110 mmbfj110-d.pdf
MMBFJ110
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
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1N3070TR 1n3070-d.pdf
1N3070TR
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: rectifying
Case: DO35
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Features of semiconductor devices: small signal
Reverse recovery time: 50ns
на замовлення 3816 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.53 грн
40+9.56 грн
62+6.19 грн
100+4.55 грн
287+3.20 грн
500+2.91 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
FQPF2N80 fqpf2n80-d.pdf
FQPF2N80
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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FQPF2N80YDTU fqpf2n80ydtu-d.pdf FAIRS45220-1.pdf?t.download=true&u=5oefqw
FQPF2N80YDTU
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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1N5929BRLG 1N59xxB.pdf
1N5929BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Manufacturer series: 1N59xxB
Power dissipation: 3W
Mounting: THT
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Tolerance: ±5%
на замовлення 4280 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.70 грн
21+18.42 грн
50+14.22 грн
100+12.54 грн
107+8.40 грн
293+7.95 грн
1000+7.64 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MC74HC73ADG MC74HC73-D.pdf
MC74HC73ADG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: negative-edge-triggered
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.04 грн
12+34.55 грн
25+27.14 грн
51+17.81 грн
138+16.90 грн
275+16.36 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MC74VHCT50ADR2G mc74vhct50a-d.pdf
MC74VHCT50ADR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Type of integrated circuit: digital
Quiescent current: 40µA
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Mounting: SMD
на замовлення 502 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.39 грн
11+35.17 грн
25+28.82 грн
46+19.80 грн
125+18.73 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NLU1GT50AMX1TCG nlu1gt50-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Mounting: SMD
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SMMBT2907ALT1G mmbt2907alt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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SMMBT2907ALT3G mmbt2907alt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSS40201LT1G nss40201l-d.pdf
NSS40201LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 40V
Current gain: 200
Collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.54W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 150MHz
на замовлення 609 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+27.99 грн
23+16.97 грн
50+12.31 грн
75+11.39 грн
90+10.09 грн
247+9.48 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
MMBF4391LT1G mmbf4391lt1-d.pdf
MMBF4391LT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 1177 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+22.72 грн
25+16.67 грн
50+13.99 грн
100+11.47 грн
111+8.10 грн
304+7.72 грн
500+7.57 грн
1000+7.49 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
FDMS86300DC fdms86300dc-d.pdf
FDMS86300DC
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86200DC fdms86200dc-d.pdf
FDMS86200DC
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3669S fdms3669s-d.pdf ONSM-S-A0003585221-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Mounting: SMD
Case: Power56
Drain-source voltage: 30/30V
Drain current: 24/60A
On-state resistance: 14.5/7.1mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24/34nC
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
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FDMS7620S fdms7620s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS9600S fdms9600s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
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SMMBT3906LT1G mmbt3906lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906LT3G mmbt3906lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906WT1G mmbt3904wt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT4403LT1G mmbt4403lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NTJS3157NT1G ntjs3157n-d.pdf
NTJS3157NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
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NLAS3157MX3TCG
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
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NLASB3157MTR2G nlasb3157-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 10µA
Kind of output: SPDT
Technology: CMOS
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NRVBSS24NT3G ss24-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
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SBC847BDW1T1G BC84xXDW1Tx.PDF
SBC847BDW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2094 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+18.94 грн
32+12.31 грн
37+10.47 грн
75+8.56 грн
100+8.10 грн
154+5.81 грн
424+5.50 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SMMBT5401LT1G mmbt5401lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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DFB2040 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2D936488840DC&compId=DFB20xx.pdf?ci_sign=acc8c342310d07484802840a4e397ecb76a692aa
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
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MC74AC273DWG mc74ac273-d.pdf
MC74AC273DWG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 80µA
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+127.61 грн
10+65.90 грн
21+43.12 грн
58+40.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJE15029G MJE15031G.PDF
MJE15029G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Collector-emitter voltage: 120V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+114.67 грн
10+100.91 грн
11+87.15 грн
29+82.56 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDP52N20 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE92CE32B8FA259&compId=FDP52N20%2C%20FDPF52N20T.pdf?ci_sign=9f6ce9ee9503deb9021bb393eee3bd9d4a8dfe0b
FDP52N20
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+165.48 грн
9+104.73 грн
24+99.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBPC3510 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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FDMQ8203 FDMQ8203.PDF
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Gate charge: 19/5nC
Semiconductor structure: common drain
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FDMQ86530L fdmq86530l-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Gate charge: 33nC
Pulsed drain current: 50A
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SMMBFJ310LT1G mmbfj309lt1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ309LT1G mmbfj309lt1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ310LT3G mmbfj309lt1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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TIP29AG pVersion=0046&contRep=ZT&docId=005056AB82531ED999CB51EFCFAE9820&compId=TIP29A-C_TIP30A-C.pdf?ci_sign=d0ea39944a06a9b634764395908636d5e2cab8c9
TIP29AG
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+97.15 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
1SS400T1G 1ss400t1-d.pdf
1SS400T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Features of semiconductor devices: fast switching
на замовлення 4729 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.23 грн
70+5.50 грн
99+3.90 грн
115+3.34 грн
477+1.89 грн
1311+1.79 грн
3000+1.75 грн
Мінімальне замовлення: 50
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LM2575T-3.3G LM2575-ON-DTE.PDF
LM2575T-3.3G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+246.17 грн
8+121.55 грн
21+114.67 грн
Мінімальне замовлення: 2
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74VHC02M FAIRS25986-1.pdf?t.download=true&u=5oefqw ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw
74VHC02M
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: tube
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74VHC02MTCX ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw
74VHC02MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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74VHC02MX ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw FAIRS25986-1.pdf?t.download=true&u=5oefqw
74VHC02MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Quiescent current: 20µA
Kind of package: reel; tape
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SMMBT4401LT1G mmbt4401lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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MC74ACT32DG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE047DAA6A200C7&compId=74AC32SC.pdf?ci_sign=71f9b6949affe7b4984def07d408da8e11fa6413 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A560C7&compId=MC74AC32DG.pdf?ci_sign=2445cd0567e47abdf5adb2e1047c1744f7366b36
MC74ACT32DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Number of inputs: 2
Kind of gate: OR
на замовлення 380 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+86.45 грн
12+33.56 грн
25+27.29 грн
45+20.11 грн
124+18.96 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC74ACT273DWG mc74ac273-d.pdf
MC74ACT273DWG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+127.61 грн
10+73.31 грн
24+38.00 грн
66+35.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SMMBT2222ALT1G mmbt2222lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222ALT3G mmbt2222lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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SMMBT2222AWT1G mmbt2222awt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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74ACT14MTC ONSM-S-A0003584689-1.pdf?t.download=true&u=5oefqw
74ACT14MTC
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: TSSOP14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SC ONSM-S-A0003584689-1.pdf?t.download=true&u=5oefqw
74ACT14SC
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Type of integrated circuit: digital
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74ACT14SCX 74AC14-D.PDF
74ACT14SCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: SO14
Kind of gate: NOT
Number of channels: hex; 6
Family: ACT
Quiescent current: 40µA
Type of integrated circuit: digital
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SMMBT5551LT1G mmbt5550lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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SMMBT5551LT3G mmbt5550lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FQP45N15V2 FQP45N15V2.pdf
FQP45N15V2
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Drain-source voltage: 150V
Drain current: 31A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 220W
Polarisation: unipolar
Kind of package: tube
Gate charge: 94nC
Technology: QFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
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MPSA56G MPSA56G.PDF
MPSA56G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
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74ACT08MTCX 74ACT08-D.PDF
74ACT08MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: ACT
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74ACT08SCX 74ACT08-D.PDF
74ACT08SCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
товару немає в наявності
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